ANALOG DEVICES ADG 619 BRMZ Datasheet

CMOS, ±5 V/+5 V,

FEATURES

6.5 Ω (maximum) on resistance

0.8 Ω (maximum) on-resistance flatness

2.7 V to 5.5 V single supply
±2.7 V to ±5.5 V dual supply
Rail-to-rail operation
8-lead SOT-23, 8-lead MSOP
Typical power consumption (<0.1 μW)
TTL-/CMOS-compatible inputs

APPLICATIONS

Automatic test equipment
Power routing
Communication systems
Data acquisition systems
Sample-and-hold systems
Avio nics
Relay replacement
Battery-powered systems

4 Ω, Single SPDT Switches

ADG619/ADG620

FUNCTIONAL BLOCK DIAGRAM

ADG619/ADG620

S2

S1

IN

NOTES

1. SWITCHES SHOWN FOR
A LOGIC 1 INPUT.

Figure 1.

D

02617-001

GENERAL DESCRIPTION

The ADG619/ADG620 are monolithic, CMOS single-pole
double-throw (SPDT) switches. Each switch conducts equally
well in both directions when the device is on.

The ADG619/ADG620 offer a low on resistance of 4 Ω, which
is matched to within 0.7 Ω between channels. These switches
also provide low power dissipation, yet result in high switching
speeds. The ADG619 exhibits break-before-make switching
action, thus preventing momentary shorting when switching
channels. The ADG620 exhibits make-before-break action.

The ADG619/ADG620 are available in an 8-lead SOT-23 and
an 8-lead MSOP.

PRODUCT HIGHLIGHTS

1. Low on resistance (R

2. Dual ±2.7 V to ±5.5 V or single 2.7 V to 5.5 V supplies.

3. Low power dissipation.

4. Fast t

ON/tOFF

.

5. Tiny, 8-lead SOT-23 and 8-lead MSOP.

Table 1. Truth Table for the ADG619/ADG620

IN Switch S1 Switch S2

0 On Off

1 Off On

): 4 Ω typical.

ON

Rev. C

Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Anal og Devices for its use, nor for any infringements of patents or ot her
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone] www.analog.com
Fax: [phone] ©2001–2007 Analog Devices, Inc. All rights reserved.

ADG619/ADG620

TABLE OF CONTENTS

Features.............................................................................................. 1

Absolute Maximum Ratings ............................................................6

Applications....................................................................................... 1

Functional Block Diagram .............................................................. 1

General Description ......................................................................... 1

Product Highlights ........................................................................... 1

Revision History ............................................................................... 2

Specifications..................................................................................... 3

Dual Supply................................................................................... 3

Single Supply................................................................................. 5

REVISION HISTORY

3/07—Rev. B to Rev. C

Changes to Specifications................................................................ 3

1/06—Rev. A to Rev. B
Changes to R

Updated Outline Dimensions....................................................... 13

Changes to Ordering Guide.......................................................... 13

6/03—Rev. 0 to Rev. A.

Edits to Specifications...................................................................... 2

Changes to Ordering Guide............................................................ 4

Updated Outline Dimensions......................................................... 8

Values in Table 2 ................................................... 2

ON

ESD Caution...................................................................................6

Pin Configurations and Function Descriptions............................7

Typical Performance Characteristics..............................................8

Terminology.................................................................................... 10

Test Circuits..................................................................................... 11

Outline Dimensions....................................................................... 13

Ordering Guide............................................................................... 14

Rev. C | Page 2 of 16

ADG619/ADG620

SPECIFICATIONS

DUAL SUPPLY

VDD = +5 V ± 10%, VSS = −5 V ± 10%, GND = 0 V. All specifications −40°C to +85°C, unless otherwise noted.

Table 2.

B Version

1

Parameter +25°C −40°C to +85°C Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range VSS to VDD V VDD = +4.5 V, VSS = −4.5 V
On Resistance (RON) 4 Ω typ VS = ±4.5 V, IDS = −10 mA; see Figure 15

6.5 8.5 Ω max
RON Match Between Channels (∆RON) 0.7 Ω typ VS = ±4.5 V, IDS = −10 mA

1.1 1.35 Ω max
On-Resistance Flatness (R

) 0.7 0.8 Ω typ VS = ±3.3 V, IDS = −10 mA

FLAT (ON)

1.35 1.4 Ω max

LEAKAGE CURRENTS VDD = +5.5 V, VSS = −5.5 V

Source Off Leakage, IS (Off)

±0.01

nA typ

= ±4.5 V, VD = ∓ 4.5 V; see Figure 16

V

S

±0.25 ±1 nA max
Channel On Leakage, ID, IS (On) ±0.01 nA typ VS = VD = ±4.5 V; see Figure 17
±0.25 ±1 nA max

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V
Input Current, I

INL

2.4 V min

INH

0.8 V max

INL

or I

0.005 µA typ VIN = V

INH

INL

or V

INH

±0.1 A max
Digital Input Capacitance, CIN 2 pF typ

DYNAMIC CHARACTERISTICS

2

ADG619

tON 80 ns typ RL = 300 Ω, CL = 35 pF
120 155 ns max VS = 3.3 V; see Figure 18
t

45 ns typ RL = 300 Ω, CL = 35 pF

OFF

75 90 ns max VS = 3.3 V; see Figure 18
Break-Before-Make Time Delay, t

40 ns typ RL = 300 Ω, CL = 35 pF

BBM

10 ns min VS1 = VS2 = 3.3 V; see Figure 19
ADG620

tON 40 ns typ RL = 300 Ω, CL = 35 pF
65 85 ns max VS = 3.3 V; see Figure 18
t

200 ns typ RL = 300 Ω, CL = 35 pF

OFF

330 400 ns max VS = 3.3 V; see Figure 18

Make-Before-Break Time Delay, t

160 ns typ RL = 300 Ω, CL = 35 pF

MBB

10 ns min VS = 0 V; see Figure 20
Charge Injection 110 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF; see Figure 21
Off Isolation −67 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 22
Channel-to-Channel Crosstalk −67 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 23
Bandwidth −3 dB 190 MHz typ RL = 50 Ω, CL = 5 pF; see Figure 24
CS (Off) 25 pF typ f = 1 MHz
CD, CS (On) 95 pF typ f = 1 MHz

Rev. C | Page 3 of 16

ADG619/ADG620

B Version

1

Parameter +25°C −40°C to +85°C Unit Test Conditions/Comments

POWER REQUIREMENTS VDD = +5.5 V, VSS = −5.5 V

IDD 0.001 A typ Digital inputs = 0 V or 5.5 V

1.0 A max
ISS 0.001 A typ Digital inputs = 0 V or 5.5 V

1.0 A max

1

Temperature range for B version is −40°C to +85°C.

2

Guaranteed by design, not subject to production test.

Rev. C | Page 4 of 16

ADG619/ADG620

SINGLE SUPPLY

VDD = 5 V ± 10%, VSS = 0 V, GND = 0 V. All specifications −40°C to +85°C, unless otherwise noted.

Table 3.

B Version

1

Parameter +25°C −40°C to +85°C Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 V to VDD V VDD = 4.5 V, VSS = 0 V
On Resistance (RON) 7 Ω typ VS = 0 V to 4.5 V, IDS = −10 mA; see Figure 15
10 12.5 Ω max
RON Match Between Channels (∆RON) 0.8 Ω typ VS = 0 V to 4.5 V, IDS = −10mA

1.1 1.3 Ω max
On-Resistance Flatness (R

) 0.5 0.5 Ω typ VS = 1.5 V to 3.3 V, IDS = −10 mA

FLAT (ON)

1.2 Ω max

LEAKAGE CURRENTS VDD = 5.5 V

Source Off Leakage, IS (Off) ±0.01 nA typ VS = 1 V/4.5 V, VD = 4.5 V/1 V; see Figure 16
±0.25 ±1 nA max
Channel On Leakage, ID, IS (On) ±0.01 nA typ VS = VD = 1 V/4.5 V; see Figure 17
±0.25 ±1 nA max

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V
Input Current, I

INL

2.4 V min

INH

0.8 V max

INL

or I

0.005 µA typ VIN = V

INH

INL

or V

INH

±0.1 µA max
Digital Input Capacitance, CIN 2 pF typ

DYNAMIC CHARACTERISTICS

2

ADG619

tON 120 ns typ RL = 300 Ω, CL = 35 pF
220 280 ns max VS = 3.3 V; see Figure 18
t

50 ns typ RL = 300 Ω, CL = 35 pF

OFF

75 110 ns max VS = 3.3 V; see Figure 18
Break-Before-Make Time Delay, t

70 ns typ RL = 300 Ω, CL = 35 pF

BBM

10 ns min VS1 = VS2 = 3.3 V; see Figure 19
ADG620

tON 50 ns typ RL = 300 Ω, CL = 35 pF
85 110 ns max VS = 3.3 V; see Figure 18
t

210 ns typ RL = 300 Ω, CL = 35 pF

OFF

340 420 ns max VS = 3.3 V; see Figure 18
Make-Before-Break Time Delay, t

170 ns typ RL = 300 Ω, CL = 35 pF

MBB

10 ns min VS = 3.3 V; see Figure 20
Charge Injection 6 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF; see Figure 21
Off Isolation −67 dB typ

= 50 Ω, CL = 5 pF, f = 1 MHz; see Figure

R

L

22

Channel-to-Channel Crosstalk −67 dB typ

= 50 Ω, CL = 5 pF, f = 1 MHz; see Figure

R

L

23
Bandwidth −3 dB 190 MHz typ RL = 50 Ω, CL = 5 pF; see Figure 24
CS (OFF) 25 pF typ f = 1 MHz
CD, CS (ON) 95 pF typ f = 1 MHz

POWER REQUIREMENTS VDD = 5.5 V

IDD 0.001 A typ Digital inputs = 0 V or 5.5 V

1.0 A max

1

Temperature range for B version is −40°C to +85°C.

2

Guaranteed by design, not subject to production test.

Rev. C | Page 5 of 16

ADG619/ADG620

ABSOLUTE MAXIMUM RATINGS

TA = 25°C, unless otherwise noted.

Table 4.

Parameter Rating

VDD to VSS 13 V
VDD to GND −0.3 V to +6.5 V
VSS to GND +0.3 V to −6.5 V
Analog Inputs1 V
Digital Inputs1

Peak Current, S or D

Continuous Current, S or D 50 mA
Operating Temperature Range

Industrial (B Version) −40°C to +85°C
Storage Temperature Range −65°C to +150°C
Junction Temperature 150°C
MSOP

θJA Thermal Impedance 206°C/W

θJC Thermal Impedance 44°C/W
SOT-23

θJA Thermal Impedance 229.6°C/W

θJC Thermal Impedance 91.99°C/W
Lead Temperature, Soldering

(10 sec)

IR Reflow, Peak Temperature 220°C

1

Overvoltages at IN, S, or D are clamped by internal diodes. Current should be

limited to the maximum ratings given.

− 0.3 V to VDD + 0.3 V

SS

−0.3 V to V
(whichever occurs first)

100 mA (pulsed at 1 ms,
10% duty cycle maximum)

300°C

+ 0.3 V or 30 mA

DD

Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.

Only one absolute maximum rating may be applied at a time.

ESD CAUTION

Rev. C | Page 6 of 16

ADG619/ADG620

PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS

1

D

2

S1

3

GND

(Not to Scale)

V

4

DD

NC = NO CONNECT

ADG619/

ADG620

TOP VIEW

8

S2

V

7

SS

IN

6

NC

5

02617-002

Figure 2. 8-Lead SOT-23

(RJ-8)

Table 5. Pin Function Descriptions

Pin No. Mnemonic Description

1 D Drain Terminal. Can be an input or output.
2 S1 Source Terminal. Can be an input or output.
3 GND Ground (0 V) Reference.
4 VDD Most Positive Power Supply.
5 NC No Connect. Not internally connected.
6 IN Logic Control Input.
7 VSS

Most Negative Power Supply. This pin is only used in dual-supply applications and should be tied to
ground in single-supply applications.

8 S2 Source Terminal. Can be an input or output.

D

1

ADG619/

2

S1

3

(Not to Scale)

4

V

DD

NC = NO CO NNECT

ADG620

TOP VIEW

GND

Figure 3. 8-Lead MSOP

(RM-8)

S2

8

7

V

SS

IN

6

NC

5

02617-003

Rev. C | Page 7 of 16

ADG619/ADG620

TYPICAL PERFORMANCE CHARACTERISTICS

8

7

6

5

4

V

3

2

ON RESISTANCE (Ω)

1

0

–5

DD,VSS

TA= 25°C

–4

Figure 4. On Resistance vs. V

VDD,VSS=±2.5V

VDD,VSS= ±3V

V

DD,VSS

= ±4.5V

–1

–2

VD,VS(V)

= ±3.3V

= ±5V

V

DD,VSS

0

1234

, VS (Dual Supply)

D

02617-004

5–3

10

9

8

7

6

5

4

ON RESISTANCE (Ω)

3

2

1

=5V

V

DD

V

=0V

SS

0

0

1

Figure 7. On Resistance vs. V

TA=+85°C

T

=+25°C

A

TA= –40°C

2

VD,VS(V)

for Different Temperatures (Single Supply)

D, VS

3

4

02617-007

5

18

16

14

12

10

8

6

ON RESISTANCE (Ω)

4

2

0

021

VDD=3V

VDD=3.3V

Figure 5. On Resistance vs. V

6

5

4

3

2

ON RESISTANCE (Ω)

1

VDD=+5V
V

= –5V

SS

0

–5

–4

Figure 6. On Resistance vs. V

VDD=2.7V

VDD=4.5V

VDD=5V

VD,VS(V)

–1–2

VD,VS(V)

, VS for Different Temperatures (Dual Supply)

D

34

, VS (Single Supply)

D

TA=+85°C

TA=+25°C

TA=–40°C

0

TA=25°C
V

=0V

SS

02617-005

5

02617-006

5–3 1234

0.5
VDD=+5V

= –5V

V

SS

0.4

=±4.5V

V

D

=±4.5V

V

S

0.3

0.2

0.1

0

–0.1

–0.2

LEAKAGE CURRENTS (n A)

–0.3

–0.4

–0.5

04030

10 20

TEMPERATURE (°C)

I

S

60 807050

(OFF)

I

D,IS

(ON)

Figure 8. Leakage Currents vs. Temperature (Dual Supply)

0.5
VDD=5V

V

=0V

SS

0.4

=4.5V/1V

V

D

= 1V/4. 5V

V

S

0.3

0.2

(ON)

0.1

0

–0.1

–0.2

LEAKAGE CURRENTS (n A)

–0.3

–0.4

–0.5

04030

10 20

TEMPERATURE (°C)

I

D,IS

I

S

60 807050

(OFF)

Figure 9. Leakage Currents vs. Temperature (Single Supply)

02617-008

02617-009

Rev. C | Page 8 of 16

ADG619/ADG620

–

–

250

T

= 25°C

A

10

200

= +5V

V

DD

V

= –5V

150

100

CHARGE INJECTI ON (pC)

50

0

SS

VS (V)

VDD = +5V
V

= 0V

SS

Figure 10. Charge Injection vs. Source Voltage

180

160

140

120

100

80

TIME (ns)

60

40

20

0

–40 –20 2004060

t

ON

t

OFF

Figure 11. t

VDD = +5V
V

= 0V

SS

= +5V

V

DD

V

= 0V

SS

TEMPERATURE (°C)

Times vs. Temperatures

ON/tOFF

V

= +5V

DD

V

= –5V

SS

= +5V

V

DD

V

= –5V

SS

02617-010

5–3 1234–5 –1–2–4 0

02617-011

80

ATTENUATIO N (dB)

ATTENUATIO N (dB)

–20

–30

–40

–50

–60

–70

–80

–2

–4

–6

–8

–10

–12

–14

FREQUENCY (MHz)

Figure 13. Crosstalk vs. Frequency

0

VDD=+5V

= –5V

V

SS

= 25°C

T

A

1100

FREQUENCY (MHz)

Figure 14. On Response vs. Frequency

VDD=+5V
V

= –5V

SS

T

= 25°C

A

02617-013

1000.2 101

02617-014

10

10000.2

10

–20

–30

–40

–50

–60

–70

ATTENUATION (dB)

–80

V

= +5V

–90

–100

0.03

1 10 100

FREQUENCY (M Hz)

DD

V

SS

T

A

= –5V

= 25°C

02617-012

Figure 12. Off Isolation vs. Frequency

Rev. C | Page 9 of 16

ADG619/ADG620

TERMINOLOGY

IDD

Positive supply current.

, CS (On)

C

D

On switch capacitance.

I

SS

Negative supply current.

R

ON

Ohmic resistance between D and S terminals.

ΔR

ON

On resistance match between any two channels.

FLAT (ON)

R

Flatness is defined as the difference between the maximum and
minimum value of on resistance as measured over the specified
analog signal range.

(Off)

I

S

Source leakage current with the switch off.

, IS (On)

I

D

Channel leakage current with the switch on.

, VS

V

D

Analog voltage on Terminal D and Terminal S.

V

INL

Maximum input voltage for Logic 0.

V

INH

Minimum input voltage for Logic 1.

, I

INL

INH

I

Input current of the digital input.

(Off)

C

S

Off switch source capacitance.

t

ON

Delay between applying the digital control input and the output
switching on.

t

OFF

Delay between applying the digital control input and the output
switching off.

t

MBB

On time is measured between the 80% points of both switches,
when switching from one address state to another.

t

BBM

Off time or on time is measured between the 90% points of
both switches, when switching from one address state
to another.

Charge Injection

A measure of the glitch impulse transferred from the digital
input to the analog output during switching.

Crosstalk

A measure of unwanted signal coupled through from one
channel to another as a result of parasitic capacitance.

Off Isolation

A measure of unwanted signal coupling through an off switch.

Bandwidth

The frequency response of the on switch.

Insertion Loss

The loss due to the on resistance of the switch.

Rev. C | Page 10 of 16

ADG619/ADG620

V

V

V

V

V

V

V

V

V

TEST CIRCUITS

I

DS

V1

S

D

V

S

RON=V1/I

DS

02617-015

S

SD

ID(OFF)IS(OFF)

AA

V

D

NC

02617-016

SD

ID(ON)

A

V

D

02617-017

Figure 15. On Resistance Figure 16. Off Leakage Figure 17. On Leakage

SS

DD

0.1µF

SD

V

S

V

S1

V

S2

V

0.1µF

IN

DD

0.1µF

V

DD

S1

S2

IN

IN

GND

DD

SS

0.1µF

0.1µF

V

V

DD

SS

V

C

L

35pF

OUT

GND

R

L

300Ω

Figure 18. Switching Times

SS

0.1µF

V

SS

D2

D

R

L2

300Ω

C

L2

35pF

V

OUT

Figure 19. Break-Before-Make Time Delay, t

V

IN

V

OUT

V

IN

0V

V

OUT

0V

(ADG619 Only)

BBM

50% 50%

90%

t

ON

50%

90% 90%

t

BBM

50%

t

BBM

90%

t

02617-018

OFF

02617-019

V

V

DD

SS

V

D

IN

V

IN

GND

R

L2

300Ω

C
35pF

R

V

L1

S1

300Ω

L2

Figure 20. Make-Before-Break Time Delay, t

DD

SS

V

V

DD

SS

R

S

V

S

DS

IN

GND

C
1nF

V

OUT

L

C

L1

35pF

V

S2

V

S1

IN

OUT

V

S1

V

IN

V

S1

V

S2

(ADG620 Only)

MBB

Q

INJ=CL

0V

80%V

× ΔV

50% 50%

80%V

D

t

MBB

ΔV

OUT

ΔV

OUT

OUT

D

02617-020

02617-021

Figure 21. Charge Injection

Rev. C | Page 11 of 16

ADG619/ADG620

V

V

V

V

V

C

V

V

V

SS

DD

0.1µF

0.1µF

V

V

DD

SS

IN

S

50Ω

D

IN

GND

V

OFF ISOLATION = 20 log

OUT

V

S

Figure 22. Off Isolation

DD

0.1µF

NETWORK

ANALYZER

V

OUT

50Ω

V

S

R
50Ω

V

DD

S1

S2

IN

HANNEL-TO-CHANNEL CROSSTAL K = 20 log

Figure 23. Channel-to-Channel Crosstalk

GND

V

OUT

V

V

S

NETWORK

ANALYZER

50Ω

V

S

V

OUT

R

L

50Ω

SS

0.1µF

SS

D

R
50Ω

02617-022

02617-023

0.1µF

V

DD

IN

IN

INSERTIO N LOSS = 20 l og

S

GND

0.1µF

V

SS

NETWORK

ANALYZER

50Ω

V

S

D

V

WITH SWITCH

OUT

V

WITHOUT SWITCH

S

R
50Ω

V

OUT

L

02617-024

SS

DD

Figure 24. Bandwidth

Rev. C | Page 12 of 16

ADG619/ADG620

OUTLINE DIMENSIONS

3.20

3.00

2.80

8

5

4

SEATING
PLANE

5.15

4.90

4.65

1.10 MAX

0.23

0.08

8°
0°

0.80

0.60

0.40

3.20

3.00

2.80

PIN 1

0.95

0.85

0.75

0.15

0.00

COPLANARITY

1

0.65 BSC

0.38

0.22

0.10

COMPLIANT TO JEDEC STANDARDS MO-187-AA

Figure 25. 8-Lead Mini Small Outline Package [MSOP]

(RM-8)

Dimensions shown in millimeters

2.90 BSC

2

1.95
BSC

56

2.80 BSC

0.65 BSC

1.45 MAX

SEATING
PLANE

0.22

0.08

8°
4°
0°

0.60

0.45

0.30

1.60 BSC

PIN 1

INDICATOR

1.30

1.15

0.90

0.15 MAX

847

13

0.38

0.22

COMPLIANT TO JEDEC STANDARDS MO-178-B A

Figure 26. 8-Lead Small Outline Transistor Package [SOT-23]

(RJ-8)

Dimensions shown in millimeters

Rev. C | Page 13 of 16

ADG619/ADG620

ORDERING GUIDE

Model Temperature Range Package Description Package Option Branding1

ADG619BRM −40°C to +85°C 8-Lead Mini Small Outline Package (MSOP) RM-8 SVB
ADG619BRM-REEL −40°C to +85°C 8-Lead Mini Small Outline Package (MSOP) RM-8 SVB

ADG619BRM-REEL7 −40°C to +85°C 8-Lead Mini Small Outline Package (MSOP) RM-8 SVB
ADG619BRMZ
ADG619BRMZ-REEL
ADG619BRMZ-REEL72−40°C to +85°C 8-Lead Mini Small Outline Package (MSOP) RM-8 SCC
ADG619BRT-REEL −40°C to +85°C 8-Lead Small Outline Transistor Package (SOT-23) RJ-8 SVB
ADG619BRT-REEL7 −40°C to +85°C 8-Lead Small Outline Transistor Package (SOT-23) RJ-8 SVB
ADG619BRT-500RL7 −40°C to +85°C 8-Lead Small Outline Transistor Package (SOT-23) RJ-8 SVB
ADG619BRTZ-REEL
ADG619BRTZ-REEL7
ADG619BRTZ-500RL72−40°C to +85°C 8-Lead Small Outline Transistor Package (SOT-23) RJ-8 SCC
ADG620BRM −40°C to +85°C 8-Lead Mini Small Outline Package (MSOP) RM-8 SWB
ADG620BRM-REEL −40°C to +85°C 8-Lead Mini Small Outline Package (MSOP) RM-8 SWB
ADG620BRM-REEL7 −40°C to +85°C 8-Lead Mini Small Outline Package (MSOP) RM-8 SWB
ADG620BRMZ
ADG620BRT-REEL −40°C to +85°C 8-Lead Small Outline Transistor Package (SOT-23) RJ-8 SWB
ADG620BRT-REEL7 −40°C to +85°C 8-Lead Small Outline Transistor Package (SOT-23) RJ-8 SWB

ADG620BRTZ-REEL7

1

Branding on SOT-23 and MSOP is limited to three characters due to space constraints.

2

Z = RoHS Compliant Part.

2

2

−40°C to +85°C 8-Lead Mini Small Outline Package (MSOP) RM-8 SCC

2

−40°C to +85°C 8-Lead Mini Small Outline Package (MSOP) RM-8 SCC

2

−40°C to +85°C 8-Lead Small Outline Transistor Package (SOT-23) RJ-8 SCC

2

−40°C to +85°C 8-Lead Small Outline Transistor Package (SOT-23) RJ-8 SCC

−40°C to +85°C 8-Lead Mini Small Outline Package (MSOP) RM-8 S21

2

−40°C to +85°C 8-Lead Small Outline Transistor Package (SOT-23) RJ-8 S21

Rev. C | Page 14 of 16

ADG619/ADG620

NOTES

Rev. C | Page 15 of 16

ADG619/ADG620

NOTES

©2001–2007 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
C02617-0-3/07(C)

Rev. C | Page 16 of 16