Analog Devices ADG609BRU, ADG609BR, ADG609BN, ADG608TRU, ADG608BRU Datasheet
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3 V/5 V , 4/8 Channel High
S1
S8
A0
D
A1 A2 EN
1 OF 8
DECODER
ADG608
S1A
A0
DA
A1
S4A
S1B
S4B
DB
EN
1 OF 4
DECODER
ADG609
a
Performance Analog Multiplexers
ADG608/ADG609
FEATURES
+3 V, +5 V, 65 V Power Supplies
VSS to VDD Analog Signal Range
Low On Resistance (30 V max)
Fast Switching Times
75 ns max
t
ON
45 ns max
t
OFF
Low Power Dissipation (1.5 mW max)
Break-Before-Make Construction
ESD > 5000 V as per Military Standard 3015.7
TTL and CMOS Compatible Inputs
APPLICATIONS
Automatic Test Equipment
Data Acquisition Systems
Communication Systems
Avionics and Military Systems
Microprocessor Controlled Analog Systems
Medical Instrumentation
Battery Powered Instruments
Remote Powered Equipment
Compatible with 65 V DACs and ADCs such as
AD7840/8, AD7870/1/2/4/5/6/8
The ability to operate from single +3 V, +5 V or ± 5 V bipolar
supplies makes the ADG608 and ADG609 perfect for use in
battery operated instruments and with the new generation of
DACs and ADCs from Analog Devices. The use of 5 V supplies and reduced operating currents gives much lower power
dissipation than devices operating from ± 15 V supplies.
GENERAL DESCRIPTION
The ADG608 and ADG609 are monolithic CMOS analog multiplexers comprising eight single channels and four differential
channels respectively, fully specified for ± 5 V, +5 V and +3 V
power supplies. The ADG608 switches one of eight inputs to a
common output as determined by the 3-bit binary address lines
A0, A1 and A2. The ADG609 switches one of four differential
inputs to a common differential output as determined by the
2-bit binary address lines A0 and A1. An EN input on both devices is used to enable or disable the device. When disabled, all
channels are switched OFF. All the address and enable inputs
are TTL compatible over the full specified operating temperature range, making the parts suitable for bus-controlled systems
such as data acquisition systems, process controls, avionics and
ATEs since the TTL compatible address inputs simplify the digital
PRODUCT HIGHLIGHTS
1. Extended Signal Range
The ADG608/ADG609 are fabricated on an enhanced
LC
extends to the supplies.
2. Low Power Dissipation
3. Low R
4. Fast Switching Times
5. Break-Before-Make Switching
Switches are guaranteed break-before-make so that input
signals are protected against momentary shorting.
6. Single/Dual Supply Operation
interface design and reduce the board space requirements.
The ADG608/ADG609 are designed on an enhanced LC
process that provides low power dissipation yet gives high
switching speed and low on resistance. Each channel conducts
equally well in both directions when ON and has an input signal
range which extends to the supplies. In the OFF condition, signal levels up to the supplies are blocked. All channels exhibit
break-before-make switching action preventing momentary
shorting when switching channels. Inherent in the design is low
charge injection for minimum transients when switching the
digital inputs.
REV. A
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
2
MOS
Model Temperature Range Package Option*
ADG608BN –40°C to +85°C N-16
ADG608BR – 40°C to +85°C R-16A
ADG608BRU – 40°C to +85°C RU-16
ADG608TRU – 55°C to +125°C RU-16
ADG609BN –40°C to +85°C N-16
ADG609BR –40°C to +85°C R-16A
ADG609BRU –40°C to +85°C RU-16
*N = Plastic DIP; RU = Thin Shrink Small Outline Package (TSSOP);
R = 0.15" Small Outline IC (SOIC).
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 617/329-4700 Fax: 617/326-8703
FUNCTIONAL BLOCK DIAGRAMS
2
MOS process giving an increased signal range which
ON
ORDERING GUIDE
© Analog Devices, Inc., 1995
ADG608/ADG609–SPECIFICA TIONS
1
DUAL SUPPLY
(VDD = +5 V 6 10%, VSS = –5 V 6 10%, GND = 0 V, unless otherwise noted)
Parameter B Version T Version
+258C –40°C to +258C –558C to Test Conditions/
+858C +1258C Units Comments
ANALOG SWITCH
Analog Signal Range V
R
ON
22 22 Ω typ –3.5 V < VS < +3.5 V, IS = –1 mA;
30 35 30 40 Ω max V
SS
to V
DD
VSS to V
DD
V
= +4.5 V, VSS = –4.5 V;
DD
Test Circuit 1
∆R
ON
Match 2 3 2 3 Ω max VS = 0 V, IDS = –1 mA;
R
ON
56 56 Ω max –3 V < VS < +3 V, IDS = –1 mA;
= +5 V, VSS = –5 V
V
DD
VDD = +5 V, VSS = –5 V
LEAKAGE CURRENTS V
Source OFF Leakage I
(OFF) ±0.05 ±0.05 nA typ VD = ±4.5 V, VS = 74.5 V;
S
= +5.5 V, VSS = –5.5 V
DD
±0.5 ±2 ±0.5 ±10 nA max Test Circuit 2
Drain OFF Leakage I
(OFF) ±0.05 ±0.05 nA typ VD = ±4.5 V, VS = 74.5 V;
D
ADG608 ±0.5 ±2 ±0.5 ±10 nA max Test Circuit 3
ADG609 ±0.5 ±1 ±0.5 ±5 nA max
Channel ON Leakage I
, IS (ON) ±0.05 ±0.05 nA typ VS = VD = ±4.5 V;
D
ADG608 ±0.5 ±3 ±0.5 ±20 nA max Test Circuit 4
ADG609 ±0.5 ±1.5 ±0.5 ±10 nA max
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
INL
INH
2.4 2.4 V min
0.8 0.8 V max
Input Current
I
INL
or I
INH
±1 ±1 µA max VIN = 0 or V
CIN, Digital Input Capacitance 5 5 pF typ
DYNAMIC CHARACTERISTICS
t
TRANSITION
2
50 50 ns typ RL = 300 Ω, CL = 35 pF;
75 90 75 100 ns max V
= ±3.5 V, VS8 = 73.5 V;
S1
Test Circuit 5
t
OPEN
(EN) 50 50 ns typ RL = 300 Ω, CL = 35 pF;
t
ON
(EN) 30 30 ns typ RL = 300 Ω, CL = 35 pF;
t
OFF
Charge Injection 6 6 pC typ V
10 10 ns min RL = 300 Ω, CL = 35 pF;
= +3.5 V; Test Circuit 6
V
S
75 90 75 100 ns max V
45 60 45 75 ns max V
= +3.5 V; Test Circuit 7
S
= +3.5 V; Test Circuit 7
S
= 0 V, RS = 0 Ω, CL = 1 nF;
S
Test Circuit 8
OFF Isolation 85 85 dB typ R
Channel-to-Channel Crosstalk 85 85 dB typ R
= 1 kΩ, CL = 15 pF, f = 100 kHz;
L
= 3 V rms; Test Circuit 9
V
S
= 1 kΩ, CL = 15 pF, f = 100 kHz;
L
Test Circuit 10
(OFF) 9 9 pF typ
C
S
(OFF)
C
D
ADG608 40 40 pF typ
ADG609 20 20 pF typ
(ON)
C
D
ADG608 54 54 pF typ
ADG609 34 34 pF typ
DD
POWER REQUIREMENTS
I
DD
0.05 0.2 0.05 0.2 µA typ VIN = 0 V or V
0.2 2 0.2 2 µA max
I
SS
0.01 0.1 0.01 0.1 µA typ
0.1 1 0.1 1 µA m
NOTES
1
Temperature ranges are as follows: B Version: –40°C to +85°C; T Version: –55°C to +125°C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
–2–
DD
ax
REV. A
SINGLE SUPPLY
1
(VDD = +5 V 6 10%, VSS = 0 V, GND = 0 V, unless otherwise noted)
ADG608/ADG609
Parameter B Version T Version
+258C –408C to +258C –558C to Test Conditions/
+858C +1258C Units Comments
ANALOG SWITCH
Analog Signal Range 0
R
ON
40 40 Ω typ VS = +3.5 V, IS = –1 mA;
50 60 50 70 Ω max V
to V
DD
0 to V
DD
V
= +4.5 V;
DD
Test Circuit 1
∆R
ON
Match 2 3 2 3 Ω max VS = 0 V, IDS = –1 mA;
R
ON
56 56 Ω max +1 V < VS < +3 V, IDS = –1 mA;
= +5 V
V
DD
VDD = +5 V
LEAKAGE CURRENTS V
Source OFF Leakage I
(OFF) ±0.05 ±0.05 nA typ VD = 4.5 V/0.1 V, VS = 0.1 V/4.5 V;
S
= +5.5 V
DD
±0.5 ±2 ±0.5 ±10 nA max Test Circuit 2
Drain OFF Leakage I
(OFF) ±0.05 ±0.05 nA typ VD = 4.5 V/0.1 V, VS = 0.1 V/4.5 V;
D
ADG608 ±0.5 ±2 ±0.5 ±10 nA max Test Circuit 3
ADG609 ±0.5 ±1 ±0.5 ±5 nA max
Channel ON Leakage I
, IS (ON) ±0.05 ±0.05 nA typ VS = VD = 4.5 V/0.1 V;
D
ADG608 ±0.5 ±3 ±0.5 ±20 nA max Test Circuit 4
ADG609 ±0.5 ±1.5 ±0.5 ±10 nA max
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
INH
INL
2.4 2.4 V min
0.8 0.8 V max
Input Current
I
INL
or I
INH
±1 ±1 µA max VIN = 0 or V
CIN, Digital Input Capacitance 5 5 pF typ
DYNAMIC CHARACTERISTICS
t
TRANSITION
2
80 80 ns typ RL = 300 Ω, CL = 35 pF;
100 130 100 150 ns max V
= 3.5 V/0 V, VS8 = 0 V/3.5 V;
S1
Test Circuit 5
t
OPEN
(EN) 80 80 ns typ RL = 300 Ω, CL = 35 pF;
t
ON
(EN) 40 40 ns typ RL = 300 Ω, CL = 35 pF;
t
OFF
Charge Injection 0.5 0.5 pC typ V
10 10 ns min RL = 300 Ω, CL = 35 pF;
= +3.5 V; Test Circuit 6
V
S
100 130 100 150 ns max V
50 60 50 75 ns max V
= +3.5 V; Test Circuit 7
S
= +3.5 V; Test Circuit 7
S
= 0 V, RS = 0 Ω, CL = 1 nF;
S
3 3 pC max Test Circuit 8
OFF Isolation 85 85 dB typ R
Channel-to-Channel Crosstalk 85 85 dB typ R
= 1 kΩ, CL = 15 pF, f = 100 kHz;
L
= 1.5 V rms; Test Circuit 9
V
S
= 1 kΩ, CL = 15 pF, f = 100 kHz;
L
Test Circuit 10
(OFF) 9 9 pF typ
C
S
(OFF)
C
D
ADG608 40 40 pF typ
ADG609 20 20 pF typ
(ON)
C
D
ADG608 54 54 pF typ
ADG609 34 34 pF typ
DD
POWER REQUIREMENTS
I
DD
0.05 0.2 0.05 0.2 µA typ VIN = 0 V or V
0.2 2 0.2 2 µA max
NOTES
1
Temperature ranges are as follows: B Version: –40°C to +85°C; T Version: –55°C to +125°C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
REV. A
–3–
DD
ADG608/ADG609–SPECIFICATIONS
1
SINGLE SUPPLY
Parameter B Version T Version
ANALOG SWITCH
Analog Signal Range 0
R
ON
RON Match 3 3 3 3 Ω max VS = 0 V, IDS = –1 mA, VDD = +3.3 V
(VDD = +3.3 V 6 10%, VSS = 0 V, GND = 0 V, unless otherwise noted)
+258C –408C to +258C –558C to Test Conditions/
60 60 Ω typ VS = +1.5 V, IS = –1 mA;
90 100 90 120 Ω max V
+858C +1258C Units Comments
to V
DD
0 to V
DD
V
= +3 V; Test Circuit 1
DD
LEAKAGE CURRENTS V
Source OFF Leakage I
(OFF) ±0.05 ±0.05 nA typ VD = 2.6 V/0.1 V, VS = 0.1 V/2.6 V;
S
= +3.6 V
DD
±0.5 ±2 ±0.5 ±10 nA max Test Circuit 2
Drain OFF Leakage I
(OFF) ±0.05 ±0.05 nA typ VD = 2.6 V/0.1 V, VS = 0.1 V/2.6 V;
D
ADG608 ±0.5 ±2 ±0.5 ±10 nA max Test Circuit 3
ADG609 ±0.5 ±1 ±0.5 ±5 nA max
Channel ON Leakage I
, IS (ON) ±0.05 ±0.05 nA typ VS = VD = 2.6 V/0.1 V;
D
ADG608 ±0.5 ±3 ±0.5 ±20 nA max Test Circuit 4
ADG609 ±0.5 ±1.5 ±0.5 ±10 nA max
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
INL
INH
2.4 2.4 V min
0.8 0.8 V max
Input Current
I
INL
or I
INH
±1 ±1 µA max VIN = 0 or V
CIN, Digital Input Capacitance 5 5 pF typ
DYNAMIC CHARACTERISTICS
t
TRANSITION
2
120 120 ns typ RL = 300 Ω, CL = 35 pF;
170 225 170 250 ns max V
= 1.5 V/0 V, VS8 = 0 V/1.5 V;
S1
Test Circuit 5
t
OPEN
(EN) 120 120 ns typ RL = 300 Ω, CL = 35 pF;
t
ON
(EN) 40 40 ns typ RL = 300 Ω, CL = 35 pF;
t
OFF
Charge Injection 0.5 0.5 pC typ V
10 10 ns min RL = 300 Ω, CL = 35 pF;
= +1.5 V; Test Circuit 6
V
S
170 225 170 250 ns max V
60 75 60 90 ns max V
= +1.5 V; Test Circuit 7
S
= +1.5 V; Test Circuit 7
S
= 0 V, RS = 0 Ω, CL = 1 nF;
S
3 3 pC max Test Circuit 8
OFF Isolation 85 85 dB typ R
Channel-to-Channel Crosstalk 85 85 dB typ R
= 1 kΩ, CL = 15 pF, f = 100 kHz;
L
= 1 V rms; Test Circuit 9
V
S
= 1 kΩ, CL = 15 pF, f = 100 kHz;
L
Test Circuit 10
(OFF) 9 9 pF typ
C
S
(OFF)
C
D
ADG608 40 40 pF typ
ADG609 20 20 pF typ
(ON)
C
D
ADG608 54 54 pF typ
ADG609 34 34 pF typ
DD
POWER REQUIREMENTS
I
DD
0.05 0.2 0.05 0.2 µA typ VIN = 0 V or V
0.2 2 0.2 2 µA max
NOTES
1
Temperature ranges are as follows: B Version: –40°C to +85°C; T Version: –55°C to +125°C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
–4–
DD
REV. A
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