Analog Devices ADG604 Datasheet

1 pC Charge Injection, 100 pA Leakage

a

FEATURES
1 pC Charge Injection (Over the Full Signal Range)
2.7 V to 5.5 V Dual Supply

2.7 V to 5.5 V Single Supply
Automotive Temperature Range: –40C to +125C
100 pA Max @ 25C Leakage Currents
85  Typ On Resistance
Rail-to-Rail Operation
Fast Switching Times
Typical Power Consumption (<0.1 W)
TTL/CMOS Compatible Inputs
14-Lead TSSOP Package

APPLICATIONS
Automatic Test Equipment
Data Acquisition Systems
Battery-Powered Instruments
Communication Systems
Sample and Hold Systems
Remote-Powered Equipment
Audio and Video Signal Routing
Relay Replacement
Avionics

CMOS 5 V/5 V/3 V 4-Channel Multiplexer

ADG604

FUNCTIONAL BLOCK DIAGRAM

ADG604

4

S1

5

S2

11

S3

10

S4

1 OF 4

DECODER

1412

6

D

ENA1A0

GENERAL DESCRIPTION

The ADG604 is a CMOS analog multiplexer, comprising four
single channels. It operates from a dual supply of ±2.7 V to
± 5.5 V, or from a single supply of 2.7 V to 5.5 V.

The ADG604 switches one of four inputs to a common output,
D, as determined by the 3-bit binary address lines, A0, A1, and
EN. A Logic “0” on the EN pin disables the device.

The ADG604 offers ultralow charge injection of ±1.5 pC over the
entire signal range and leakage currents of 10 pA typical at 25°C.
It offers on resistance of 85 Ω typ, which is matched to within 2 Ω
between channels. The ADG604 also has low power dissipation yet
gives high switching speeds. The ADG604 is available in a 14-lead
TSSOP package.

PRODUCT HIGHLIGHTS

1. Ultralow Charge Injection (Q

: ± 1.5 pC Typ over the Full

INJ

Signal Range)

2. Leakage Current <0.5 nA max @ 85°C

3. Dual ± 2.7 V to ± 5.5 V or Single 2.7 V to 5.5 V Supply

4. Fully Specified to 125°C

5. Small 14-Lead TSSOP Package

REV. 0

Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone]www.analog.com
Fax: [phone] © Analog Devices, Inc., 2002

ADG604–SPECIFICATIONS

1

(V

DUAL SUPPLY

= +5 V  10%, V

DD

Parameter 25C +85C +125C Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range VSS to VDDV

On Resistance (R

)85 Ω Typ VS = ± 3 V, IS = –1 mA,

ON

On Resistance Match Between

Channels (⌬R

On-Resistance Flatness (R

)2 Ω Typ VS = ± 3 V, IS = –1 mA

ON

FLAT(ON)

)25 Ω Typ VS = ± 3 V, IS = –1 mA

LEAKAGE CURRENTS V

Source OFF Leakage I

Drain OFF Leakage I

Channel ON Leakage I

(OFF) ± 0.01 nA Typ VS = ± 4.5 V, VD = ⫿4.5 V,

S

(OFF) ± 0.01 nA Typ VS = ± 4.5 V, VD = ⫿4.5 V,

D

(ON) ± 0.01 nA Typ VS = VD = ± 4.5 V, Test Circuit 3

D, IS

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V

INH

INL

Input Current

or I

I

INL

INH

CIN, Digital Input Capacitance 2 pF Typ

DYNAMIC CHARACTERISTICS

2

Transition Time 70 ns Typ VS1 = +3 V, VS4 = –3 V, RL = 300 Ω,

t

Enable 80 ns Typ RL = 300 Ω, CL = 35 pF

ON

t

Enable 30 ns Typ RL = 300 Ω, CL = 35 pF

OFF

Break-Before-Make Time Delay, t

BBM

Charge Injection –1 pC Typ VS = 0 V, RS = 0 Ω, CL = 1nF, Test Circuit 7
Off Isolation –75 dB Typ RL = 50 Ω, CL = 5 pF, f = 10 MHz,

Channel-to-Channel Crosstalk –70 dB Typ R

Bandwidth –3 dB 280 MHz Typ R
C

(OFF) 5 pF Typ f = 1 MHz

S

(OFF) 17 pF Typ f = 1 MHz

C

D

CD, CS (ON) 18 pF Typ f = 1 MHz

POWER REQUIREMENTS V

I

DD

Iss 0.001 µA Typ Digital Inputs = 0 V or 5.5 V

NOTES

1

Y Version Temperature Range: –40°C to +125°C

2

Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

= –5 V  10%, GND = 0 V. All specifications –40C to +125C unless otherwise noted.)

SS

–40C to –40C to

= +4.5 V, VSS = –4.5 V

V

DD

115 140 160 Ω Max Test Circuit 1

4 5.5 6.5 Ω Max

40 55 60 Ω Max

= +5.5 V, VSS = –5.5 V

DD

± 0.1 ±0.25 ±4 nA Max Test Circuit 2

± 0.1 ±0.5 ± 8 nA Max Test Circuit 2

± 0.1 ±0.5 ± 10 nA Max

2.4 V Min

0.8 V Max

0.005 µA Typ VIN = V

INL

or V

INH

± 0.1 µA Max

100 120 150 ns Max C

105 130 150 ns Max V

45 55 65 ns Max V

= 35 pF, Test Circuit 4

L

= 3 V, Test Circuit 6

S

= 3 V, Test Circuit 6

S

20 ns Typ RL = 300 Ω, CL = 35 pF,

10 ns Min V

= VS2 = 3 V, Test Circuit 5

S1

Test Circuit 8

= 50 Ω, CL = 5 pF, f = 10 MHz,

L

Test Circuit 10

= 50 Ω, CL = 5 pF, Test Circuit 9

L

= +5.5 V, VSS = –5.5 V

DD

0.001 µA Typ Digital Inputs = 0 V or 5.5 V

1.0 µA Max

1.0 µA Max

–2–

REV. 0

ADG604

SINGLE SUPPLY

1

(VDD = 5 V  10%, VSS = 0 V, GND = 0 V. All specifications –40C to +125C unless otherwise noted.)

–40C to –40C to

Parameter 25C +85C +125C Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 V to V

On Resistance (R

) 210 Ω Typ VS = 3.5 V, IS = –1 mA,

ON

DD

V

V

= 4.5 V, VSS = 0 V

DD

290 350 380 Ω Max Test Circuit 1

On Resistance Match Between

Channels (⌬R

)3 Ω Typ VS = 3.5 V, IS = –1 mA

ON

12 13 Ω Max

LEAKAGE CURRENTS V

Source OFF Leakage I

(OFF) ± 0.01 nA Typ VS = 1 V/4.5 V, VD = 4.5 V/1 V,

S

= 5.5 V

DD

± 0.1 ±0.25 ±4 nA Max Test Circuit 2

Drain OFF Leakage I

(OFF) ± 0.01 nA Typ VS = 1 V/4.5 V, VD = 4.5 V/1 V,

D

± 0.1 ±0.5 ± 8 nA Max Test Circuit 2

Channel ON Leakage I

, IS (ON) ±0.01 nA Typ VS = VD = 4.5 V/1 V,

D

± 0.1 ±0.5 10 nA Max Test Circuit 3

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V

INL

INH

2.4 V Min

0.8 V Max

Input Current

I

INL

or I

INH

0.005 µA Typ VIN = V

INL

or V

INH

± 0.1 µA Max

CIN, Digital Input Capacitance 2 pF Typ

DYNAMIC CHARACTERISTICS

2

Transition Time 90 ns Typ VS1 = 3 V, VS4 = 0 V, RL = 300 Ω,

150 185 210 ns Max C

t

Enable 105 ns Typ RL = 300 Ω, CL = 35 pF

ON

150 190 220 ns Max V

Enable 45 ns Typ RL = 300 Ω, CL = 35 pF

t

OFF

70 80 90 ns Max V

Break-Before-Make Time Delay, t

BBM

30 ns Typ RL = 300 Ω, CL = 35 pF,

10 ns Min V

= 35 pF, Test Circuit 4

L

= 3 V, Test Circuit 6

S

= 3 V, Test Circuit 6

S

= VS2 = 3 V, Test Circuit 5

S1

Charge Injection 0.3 pC Typ VS = 0 V , RS = 0 Ω, CL = 1 nF,

Test Circuit 7

Off Isolation –65 dB Typ R

= 50 Ω, CL = 5 pF, f = 10 MHz,

L

Test Circuit 8

Channel-to-Channel Crosstalk –70 dB Typ R

= 50 Ω, CL = 5 pF, f = 10 MHz,

L

Test Circuit 10
Bandwidth –3 dB 250 MHz Typ R
C

(OFF) 5 pF Typ f = 1 MHz

S

(OFF) 17 pF Typ f = 1 MHz

C

D

= 50 Ω, CL = 5 pF, Test Circuit 9

L

CD, CS (ON) 18 pF Typ f = 1 MHz

POWER REQUIREMENTS V

= 5.5 V

DD

Digital Inputs = 0 V or 5.5 V
I

DD

0.001 µA Typ

1.0 µA Max

NOTES

1

Y Version Temperature Range: –40°C to +125°C

2

Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

REV. 0

–3–

ADG604–SPECIFICATIONS

SINGLE SUPPLY

Parameter 25C +85C +125C Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 V to VDDV

On Resistance (R

On Resistance Match Between

Channels (⌬RON)5Ω Typ VS = 1.5 V, IS = –1 mA

LEAKAGE CURRENTS V

Source OFF Leakage I

Drain OFF Leakage I

Channel ON Leakage I

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V
Input Current

I

or I

INL

INH

CIN, Digital Input Capacitance 2 pF Typ

DYNAMIC CHARACTERISTICS

Transition Time 170 ns Typ VS1 = 2 V, VS4 = 0 V, RL = 300 Ω,

Enable 180 ns Typ RL = 300 Ω, CL = 35 pF

t

ON

t

Enable 100 ns Typ RL = 300 Ω, CL = 35 pF

OFF

Break-Before-Make Time Delay, t

Charge Injection 0.3 pC Typ VS = 0 V to 3.3 V, RS = 0 Ω, CL = 1 µF,

Off Isolation –65 dB Typ R

Channel-to-Channel Crosstalk 70 dB Typ R

Bandwidth –3 dB 250 MHz Typ R
C

(OFF) 5 pF Typ f = 1 MHz

S

C

(OFF) 17 pF Typ f = 1 MHz

D

CD, CS (ON) 18 pF Typ f = 1 MHz

POWER REQUIREMENTS V

I

DD

NOTES

1

Y Version Temperature Range: –40°C to +125°C

2

Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

1

(VDD = 3 V  10%, VSS = 0 V, GND = 0 V. All specifications –40C to +125C unless otherwise noted.)

–40C to –40C to

V

= 2.7 V, VSS = 0 V

) 380 420 460 Ω Typ VS = 1.5 V, IS = –1 mA,

ON

DD

Test Circuit 1

= 3.3 V

(OFF) ± 0.01 nA Typ VS = 1 V/3 V, VD = 3 V/1 V,

S

DD

± 0.1 ±0.25 ±4 nA Max Test Circuit 2

(OFF) ± 0.01 nA Typ VS = 1 V/3 V, VD = 3 V/1 V,

D

± 0.1 ±0.5 ± 8 nA Max Test Circuit 2

, IS (ON) ±0.01 nA Typ VS = VD = 1 V/3 V,

D

± 0.1 ±0.5 ± 10 nA Max Test Circuit 3

INH

INL

0.005 µA Typ VIN = V

2.0 V Min

0.8 V Max

INL

or V

INH

± 0.1 µA Max

2

BBM

320 390 450 ns Max C

250 265 390 ns Max V

160 205 225 ns Max V
100 ns Typ RL = 300 Ω, CL = 35 pF,

10 ns Min V

= 35 pF, Test Circuit 4

L

= 2 V, Test Circuit 6

S

= 2 V, Test Circuit 6

S

= VS2 = 2 V, Test Circuit 5

S1

Test Circuit 7

= 50 Ω, CL = 5 pF, f = 10 MHz,

L

Test Circuit 8

= 50 Ω, CL = 5 pF, f = 10 MHz,

L

Test Circuit 10

= 50 Ω, CL = 5 pF, Test Circuit 9

L

= 3.3 V

DD

Digital Inputs = 0 V or 3.3 V

0.001 µA Typ

1.0 µA Max

–4–

REV. 0