Analog Devices ADG602BRT, ADG602BRM, ADG601BRT, ADG601BRM Datasheet

2 CMOS
a
FEATURES Low On Resistance 2.5 Max <0.6 On Resistance Flatness Dual 2.7 V to 5.5 V or Single 2.7 V to 5.5 V Supplies Rail-to-Rail Input Signal Range Tiny 6-Lead SOT-23 and 8-Lead Micro-SOIC Packages Low Power Consumption TTL/CMOS-Compatible Inputs
APPLICATIONS Automatic Test Equipment Power Routing Communication Systems Data Acquisition Systems Sample and Hold Systems Avionics Relay Replacement Battery-Powered Systems
GENERAL DESCRIPTION
The ADG601/ADG602 are monolithic CMOS SPST (Single Pole, Single Throw) switches with On Resistance typically less than 2.5 . The Low On Resistance flatness makes the ADG601/ ADG602 ideally suited to many applications, particularly those requiring low distortion. These switches are ideal for replace­ments for mechanical relays because they are more reliable, have lower power requirements, and package size is much smaller.
The ADG601 is a normally open (NO) switch, while the ADG602 is normally closed (NC). Each switch conducts both directions when ON, with the input signal range extending to the supply rails.
They are available in tiny 6-lead SOT-23 and 8-lead Micro­SOIC packages.
equally well in
5 V/5 V, SPST Switches
ADG601/ADG602
FUNCTIONAL BLOCK DIAGRAMS
S
S
ADG601
SWITCHES SHOWN FOR A LOGIC “1” INPUT
ADG601 In ADG602 In Switch Condition
0 1 OFF 10ON

PRODUCT HIGHLIGHTS

1. Low On Resistance (2 typical)
2. Dual ± 2.7 V to ±5.5 V or Single 2.7 V to 5.5 V Supplies
3. Tiny 6-lead SOT-23 and 8-lead Micro-SOIC Packages
4. Rail-to-Rail Input Signal Range
D
IN
ADG602
Table I. Truth Table
D
IN
REV. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
ADG601/ADG602
–SPECIFICATIONS
DUAL SUPPLY
(VDD = 5 V  10%, VSS = –5 V  10%, GND = 0 V, unless otherwise noted.)
B Version
–40
o
C
Parameter 25oC to +85oC Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range V
On Resistance (R
)2 typ VS = ± 4.5 V, IS = –10 mA;
ON
SS
to V
DD
V
V
= +4.5 V, VSS = –4.5 V
DD
2.5 5.5 max Test Circuit 1
On-Resistance Flatness (R
FLAT(ON)
) 0.35 typ VS = ± 3.3 V, IS = –10 mA
0.4 0.6 max
LEAKAGE CURRENTS
VDD = +5.5 V, VSS = –5.5 V
Source OFF Leakage I
(OFF) ± 0.01 nA typ VS = +4.5 V/–4.5 V, VD = –4.5 V/+4.5 V;
S
± 0.25 ±1 nA max Test Circuit 2
Drain OFF Leakage I
(OFF) ±0.01 nA typ VS = +4.5 V/–4.5 V, VD = –4.5 V/+4.5 V;
D
± 0.25 ±1 nA max Test Circuit 2
Channel ON Leakage I
, IS (ON) ± 0.01 nA typ VS = VD = +4.5 V, or –4.5 V;
D
± 0.25 ±1 nA max Test Circuit 3
DIGITAL INPUTS
Input High Voltage, V Input Low Voltage, V
INL
INH
2.4 V min
0.8 V max Input Current I
INL
or I
INH
0.005 µA typ VIN = V
INL
or V
INH
± 0.1 µA max
CIN, Digital Input Capacitance 2 pF typ
DYNAMIC CHARACTERISTICS
t
ON
t
OFF
Charge Injection 250 pC typ V Off Isolation –60 dB typ R Bandwidth –3 dB 180 MHz typ R
(OFF) 50 pF typ f = 1 MHz
C
S
C
(OFF) 50 pF typ f = 1 MHz
D
2
80 ns typ RL = 300 , CL = 35 pF 120 155 ns max V
= 3.3 V; Test Circuit 4
S
45 ns typ RL = 300 , CL = 35 pF 75 90 ns max V
= 3.3 V; Test Circuit 4
S
= 0 V, RS = 0 , CL = 1 nF; Test Circuit 5
S
= 50 , CL = 5 pF, f = 1 MHz; Test Circuit 6
L
= 50 , CL = 5 pF; Test Circuit 7
L
CD, CS (ON) 145 pF typ f = 1 MHz
POWER REQUIREMENTS
VDD = +5.5 V, VSS = –5.5 V
I
DD
0.001 µA typ Digital Inputs = 0 V or 5.5 V
1.0 µA max I
SS
0.001 µA typ Digital Inputs = 0 V or 5.5 V
1.0 µA max
NOTES
1
Temperature range is as follows: B Version: – 40°C to +85°C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
–2–
REV. 0
ADG601/ADG602
SINGLE SUPPLY
1
(VDD = 5 V 10%, VSS = 0 V, GND = 0 V, unless otherwise noted.)
B Version
–40C
Parameter 25C to +85C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to V
On Resistance (R
) 3.5 typ VS = 0 V to 4.5 V, IS = –10 mA;
ON
DD
V
= 4.5 V
V
DD
58 max Test Circuit 1
On-Resistance Flatness (R
FLAT(ON)
) 0.2 0.2 typ VS = 1.5 V to 3.3 V, IS = –10 mA
0.35 max
LEAKAGE CURRENTS
= 5.5 V
V
Source OFF Leakage I
(OFF) ± 0.01 nA typ VS = 4.5 V/1 V, VD = 1 V/4.5 V;
S
DD
± 0.25 ±1 nA max Test Circuit 2
Drain OFF Leakage I
(OFF) ±0.01 nA typ VS = 4.5 V/1 V, VD = 1 V/4.5 V;
D
± 0.25 ±1 nA max Test Circuit 2
Channel ON Leakage I
, IS (ON) ± 0.01 nA typ VS = VD = 4.5 V, or 1 V;
D
± 0.25 ±1 nA max Test Circuit 3
DIGITAL INPUTS
Input High Voltage, V Input Low Voltage, V
INL
INH
2.4 V min
0.8 V max Input Current I
INL
or I
INH
0.005 µA typ VIN = V
INL
or V
INH
± 0.1 µA max
CIN, Digital Input Capacitance 2 pF typ
DYNAMIC CHARACTERISTICS
t
ON
t
OFF
Charge Injection 20 pC typ V Off Isolation –60 dB typ R Bandwidth –3 dB 180 MHz typ R C
(OFF) 50 pF typ f = 1 MHz
S
(OFF) 50 pF typ f = 1 MHz
C
D
2
110 ns typ RL = 300 , CL = 35 pF 220 280 ns max V
= 3.3 V; Test Circuit 4
S
50 ns typ RL = 300 , CL = 35 pF 80 110 ns max V
= 3.3 V; Test Circuit 4
S
= 0 V, RS = 0 , CL = 1 nF, Test Circuit 5
S
= 50 , CL = 5 pF, f = 1 MHz, Test Circuit 6
L
= 50 , CL = 5 pF, Test Circuit 7
L
CD, CS (ON) 145 pF typ f = 1 MHz
POWER REQUIREMENTS
VDD = 5.5 V
I
DD
0.001 µA typ Digital Inputs = 0 V or 5.5 V
1.0 µA max
NOTES
1
Temperature range is as follows: B Version: –40°C to +85°C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
REV. 0
–3–
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