2 CMOS
a
FEATURES
Low On Resistance 2.5 Max
<0.6 On Resistance Flatness
Dual 2.7 V to 5.5 V or Single 2.7 V to 5.5 V Supplies
Rail-to-Rail Input Signal Range
Tiny 6-Lead SOT-23 and 8-Lead Micro-SOIC Packages
Low Power Consumption
TTL/CMOS-Compatible Inputs
APPLICATIONS
Automatic Test Equipment
Power Routing
Communication Systems
Data Acquisition Systems
Sample and Hold Systems
Avionics
Relay Replacement
Battery-Powered Systems
GENERAL DESCRIPTION
The ADG601/ADG602 are monolithic CMOS SPST (Single
Pole, Single Throw) switches with On Resistance typically less
than 2.5 Ω. The Low On Resistance flatness makes the ADG601/
ADG602 ideally suited to many applications, particularly those
requiring low distortion. These switches are ideal for replacements for mechanical relays because they are more reliable, have
lower power requirements, and package size is much smaller.
The ADG601 is a normally open (NO) switch, while the ADG602
is normally closed (NC). Each switch conducts
both directions when ON, with the input signal range extending
to the supply rails.
They are available in tiny 6-lead SOT-23 and 8-lead MicroSOIC packages.
equally well in
5 V/5 V, SPST Switches
ADG601/ADG602
FUNCTIONAL BLOCK DIAGRAMS
S
S
ADG601
SWITCHES SHOWN FOR A LOGIC “1” INPUT
ADG601 In ADG602 In Switch Condition
0 1 OFF
10ON
PRODUCT HIGHLIGHTS
1. Low On Resistance (2 Ω typical)
2. Dual ± 2.7 V to ±5.5 V or Single 2.7 V to 5.5 V Supplies
3. Tiny 6-lead SOT-23 and 8-lead Micro-SOIC Packages
4. Rail-to-Rail Input Signal Range
D
IN
ADG602
Table I. Truth Table
D
IN
REV. 0
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700 www.analog.com
Fax: 781/326-8703 © Analog Devices, Inc., 2001
ADG601/ADG602
–SPECIFICATIONS
DUAL SUPPLY
(VDD = 5 V 10%, VSS = –5 V 10%, GND = 0 V, unless otherwise noted.)
B Version
–40
o
C
Parameter 25oC to +85oC Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range V
On Resistance (R
)2 Ω typ VS = ± 4.5 V, IS = –10 mA;
ON
SS
to V
DD
V
V
= +4.5 V, VSS = –4.5 V
DD
2.5 5.5 Ω max Test Circuit 1
On-Resistance Flatness (R
FLAT(ON)
) 0.35 Ω typ VS = ± 3.3 V, IS = –10 mA
0.4 0.6 Ω max
LEAKAGE CURRENTS
VDD = +5.5 V, VSS = –5.5 V
Source OFF Leakage I
(OFF) ± 0.01 nA typ VS = +4.5 V/–4.5 V, VD = –4.5 V/+4.5 V;
S
± 0.25 ±1 nA max Test Circuit 2
Drain OFF Leakage I
(OFF) ±0.01 nA typ VS = +4.5 V/–4.5 V, VD = –4.5 V/+4.5 V;
D
± 0.25 ±1 nA max Test Circuit 2
Channel ON Leakage I
, IS (ON) ± 0.01 nA typ VS = VD = +4.5 V, or –4.5 V;
D
± 0.25 ±1 nA max Test Circuit 3
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
INL
INH
2.4 V min
0.8 V max
Input Current
I
INL
or I
INH
0.005 µA typ VIN = V
INL
or V
INH
± 0.1 µA max
CIN, Digital Input Capacitance 2 pF typ
DYNAMIC CHARACTERISTICS
t
ON
t
OFF
Charge Injection 250 pC typ V
Off Isolation –60 dB typ R
Bandwidth –3 dB 180 MHz typ R
(OFF) 50 pF typ f = 1 MHz
C
S
C
(OFF) 50 pF typ f = 1 MHz
D
2
80 ns typ RL = 300 Ω, CL = 35 pF
120 155 ns max V
= 3.3 V; Test Circuit 4
S
45 ns typ RL = 300 Ω, CL = 35 pF
75 90 ns max V
= 3.3 V; Test Circuit 4
S
= 0 V, RS = 0 Ω, CL = 1 nF; Test Circuit 5
S
= 50 Ω, CL = 5 pF, f = 1 MHz; Test Circuit 6
L
= 50 Ω, CL = 5 pF; Test Circuit 7
L
CD, CS (ON) 145 pF typ f = 1 MHz
POWER REQUIREMENTS
VDD = +5.5 V, VSS = –5.5 V
I
DD
0.001 µA typ Digital Inputs = 0 V or 5.5 V
1.0 µA max
I
SS
0.001 µA typ Digital Inputs = 0 V or 5.5 V
1.0 µA max
NOTES
1
Temperature range is as follows: B Version: – 40°C to +85°C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
–2–
REV. 0
ADG601/ADG602
SINGLE SUPPLY
1
(VDD = 5 V 10%, VSS = 0 V, GND = 0 V, unless otherwise noted.)
B Version
–40C
Parameter 25C to +85C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to V
On Resistance (R
) 3.5 Ω typ VS = 0 V to 4.5 V, IS = –10 mA;
ON
DD
V
= 4.5 V
V
DD
58 Ω max Test Circuit 1
On-Resistance Flatness (R
FLAT(ON)
) 0.2 0.2 Ω typ VS = 1.5 V to 3.3 V, IS = –10 mA
0.35 Ω max
LEAKAGE CURRENTS
= 5.5 V
V
Source OFF Leakage I
(OFF) ± 0.01 nA typ VS = 4.5 V/1 V, VD = 1 V/4.5 V;
S
DD
± 0.25 ±1 nA max Test Circuit 2
Drain OFF Leakage I
(OFF) ±0.01 nA typ VS = 4.5 V/1 V, VD = 1 V/4.5 V;
D
± 0.25 ±1 nA max Test Circuit 2
Channel ON Leakage I
, IS (ON) ± 0.01 nA typ VS = VD = 4.5 V, or 1 V;
D
± 0.25 ±1 nA max Test Circuit 3
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
INL
INH
2.4 V min
0.8 V max
Input Current
I
INL
or I
INH
0.005 µA typ VIN = V
INL
or V
INH
± 0.1 µA max
CIN, Digital Input Capacitance 2 pF typ
DYNAMIC CHARACTERISTICS
t
ON
t
OFF
Charge Injection 20 pC typ V
Off Isolation –60 dB typ R
Bandwidth –3 dB 180 MHz typ R
C
(OFF) 50 pF typ f = 1 MHz
S
(OFF) 50 pF typ f = 1 MHz
C
D
2
110 ns typ RL = 300 Ω, CL = 35 pF
220 280 ns max V
= 3.3 V; Test Circuit 4
S
50 ns typ RL = 300 Ω, CL = 35 pF
80 110 ns max V
= 3.3 V; Test Circuit 4
S
= 0 V, RS = 0 Ω, CL = 1 nF, Test Circuit 5
S
= 50 Ω, CL = 5 pF, f = 1 MHz, Test Circuit 6
L
= 50 Ω, CL = 5 pF, Test Circuit 7
L
CD, CS (ON) 145 pF typ f = 1 MHz
POWER REQUIREMENTS
VDD = 5.5 V
I
DD
0.001 µA typ Digital Inputs = 0 V or 5.5 V
1.0 µA max
NOTES
1
Temperature range is as follows: B Version: –40°C to +85°C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
REV. 0
–3–
ADG601/ADG602
WARNING!
ESD SENSITIVE DEVICE
TOP VIEW
(Not to Scale)
8
7
6
5
1
2
3
4
NC = NO CONNECT
D
NC
NC
V
DD
S
GND
IN
V
SS
ADG601/
ADG602
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise noted)
1
VDD to VSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 V
to GND . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +6.5 V
V
DD
V
to GND . . . . . . . . . . . . . . . . . . . . . . . . . . +0.3 V to –6.5 V
SS
Analog Inputs
Digital Inputs
2
. . . . . . . . . . . . . . . . . VSS –0.3 V to VDD +0.3 V
2
. . . . . . . . . . . . . . . . . . . . –0.3 V to VDD +0.3 V
or 30 mA, whichever occurs first
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . 100 mA
Peak Current, S or D
(Pulsed at 1 ms, 10% Duty Cycle Max) . . . . . . . . . 200 mA
Operating Temperature Range
Industrial (B Version) . . . . . . . . . . . . . . . –40°C to +85°C
Storage Temperature Range . . . . . . . . . . . –65°C to +150°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . 150°C
Micro-SOIC Package
Thermal Impedance . . . . . . . . . . . . . . . . . . . . 206°C/W
θ
JA
θ
Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 44°C/W
JC
SOT_23 Package
Thermal Impedance . . . . . . . . . . . . . . . . . . 229.6°C/W
θ
JA
θ
Thermal Impedance . . . . . . . . . . . . . . . . . . 91.99°C/W
JC
Lead Temperature, Soldering (10 seconds) . . . . . . . . . 300°C
IR Reflow, Peak Temperature . . . . . . . . . . . . . . . . . . . 220°C
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability. Only one absolute
maximum rating may be applied at any one time.
2
Overvoltages at IN, S, or D will be clamped by internal diodes. Current should be
limited to the maximum ratings given.
PIN CONFIGURATIONS
6-Lead Plastic Surface Mount (SOT_23)
(RT-6)
V
DD
S
V
SS
1
ADG601/
2
ADG602
3
TOP VIEW
(Not to Scale)
8
IN
7
D
6
GND
8-Lead Small Outline Micro-SOIC
(RM-8)
ORDERING GUIDE
Model Temperature Range Package Description Package Option Branding Information
ADG601BRT –40°C to +85°C Plastic Surface-Mount (SOT_23) RT-6 STB
ADG601BRM –40°C to +85°C Micro Small Outline (Micro-SOIC) RM-8 STB
ADG602BRT –40°C to +85°C Plastic Surface-Mount (SOT_23) RT-6 SUB
ADG602BRM –40°C to +85°C Micro Small Outline (Micro-SOIC) RM-8 SUB
*Branding on SOT_23 and Micro-SOIC packages is limited to three characters due to space constraints.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the ADG601/ADG602 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions
are recommended to avoid performance degradation or loss of functionality.
*
–4–
REV. 0
TERMINOLOGY
ADG601/ADG602
V
DD
V
SS
I
DD
I
SS
Most Positive Power Supply Potential
Most Negative Power Supply Potential
Positive Supply Current
Negative Supply Current
GND Ground (0 V) Reference
S Source Terminal. May be an input or output.
D Drain Terminal. May be an input or output.
IN Logic Control Input
V
) Analog Voltage on Terminals D, S
D (VS
R
ON
R
FLAT(ON)
Ohmic Resistance Between D and S
Flatness is defined as the difference between the maximum and minimum value of on-resistance as measured
over the specified analog signal range.
I
(OFF) Source Leakage Current with the Switch “OFF”
S
I
(OFF) Drain Leakage Current with the Switch “OFF”
D
I
, IS (ON) Channel Leakage Current with the Switch “ON”
D
V
INL
V
INH
I
INL(IINH
C
C
C
C
t
ON
t
OFF
) Input Current of the Digital Input
(OFF) “OFF” Switch Source Capacitance. Measured with reference to ground.
S
(OFF) “OFF” Switch Drain Capacitance. Measured with reference to ground.
D
(ON) “ON” Switch Capacitance. Measured with reference to ground.
D,CS
IN
Maximum Input Voltage for Logic “0”
Minimum Input Voltage for Logic “1”
Digital Input Capacitance
Delay Between Applying the Digital Control Input and the Output Switching On.
Delay Between Applying the Digital Control Input and the Output Switching Off.
Charge Injection A measure of the glitch impulse transferred from the digital input to the analog output during switching.
Off Isolation A measure of unwanted signal coupling through an “OFF” Switch.
On Response Frequency Response of the “ON” Switch
Insertion Loss Loss Due to the ON Resistance of the Switch
Typical Performance Characteristics
5
TA 25 C
4
3
2
ON RESISTANCE –
1
0
2.5V
3V
4.5V
–5 –45
–3 –2 –101234
VD, VS – V
3.3V
5V
TPC 1. On Resistance vs. VD(VS)
(Dual Supply)
REV. 0
10
9
8
7
6
5
4
3
ON RESISTANCE –
2
TA 25 C
1
0V
V
SS
0
0 0.5 5.0
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
TPC 2.
(Single Supply)
VDD 2.7V
VDD 3.0V
VDD 3.3V
VD, VS – V
VDD 4.5V
VDD 5.0V
On Resistance vs. VD(VS)
–5–
5
4
3
2
ON RESISTANCE –
1
0
–5 –45
+25 C
–40 C
–3 –2 –101234
VD, VS – V
VDD +5V
–5V
V
SS
+85 C
TPC 3. On Resistance vs. VD(VS) for
Different Temperatures (Dual Supply)
ADG601/ADG602
–Typical Performance Characteristics (continued)
5
–40 C
VD, VS – V
+85 C
+25 C
5.0
4
3
2
ON RESISTANCE –
1
VDD 5V
0V
V
SS
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
TPC 4. On Resistance vs. VD(VS) for
Different Temperatures (Single Supply)
500
450
400
350
300
250
200
150
CHARGE INJECTION – pC
100
50
0
–5 –45–3 –2 –101234
VDD +5V
–5V
V
SS
VS – V
TA 25 C
VDD 5V
0V
V
SS
0.5
0.4
0.3
0.2
0.1
0
–0.1
CURRENT – nA
–0.2
–0.3
–0.4
–0.5
0
10 8520 30 40 60 70 8050
TEMPERATURE – C
ID, IS (ON)
ID (OFF)
VDD 5V
V
V
V
TPC 5. Leakage Currents vs.
Temperature (Single Supply)
180
160
140
120
100
80
TIME – ns
60
40
20
0
–20
–40
VDD 5V
0V
V
SS
t
ON
t
OFF
VDD 5V
0V
V
SS
0204060
TEMPERATURE – C
0V
SS
4.5V1V
D
1V4.5V
S
IS (OFF)
VDD +5V
V
SS
V
DD
V
SS
–5V
+5V
–5V
0.5
0.4
0.3
0.2
0.1
0
–0.1
CURRENT – nA
–0.2
–0.3
–0.4
–0.5
0
10 8520 30 40 60 70 8050
TEMPERATURE – C
ID, IS (ON)
ID (OFF)
VDD +5V
–5V
V
SS
4.5V
V
D
4.5V
V
S
IS (OFF)
TPC 6. Leakage Currents vs.
Temperature (Dual Supply)
0
–10
–20
–30
–40
–50
ATTENUATION – dB
–60
–70
80
–80
0.2 1
FREQUENCY – MHz
VDD +5V
–5V
V
SS
25C
T
A
10 100
TPC 7. Charge Injection vs. Source
Voltage
0
–2
–4
–6
–8
ATTENUATION – dB
VDD +5V
–10
–5V
V
SS
25 C
T
A
–12
0.2 1
10 100
FREQUENCY – MHz
400
TPC 10. On Response vs. Frequency
TPC 8. tON/t
Times vs. Temperature
OFF
TPC 9. Off Isolation vs. Frequency
–6–
REV. 0
TEST CIRCUITS
ADG601/ADG602
I
DS
V1
SD
V
S
RON = V1/I
DS
Test Circuit 1. On Resistance
V
DD
0.1F
V
DD
SD
V
S
IN
GND
VDDV
IS (OFF)
SD
A A
V
S
Test Circuit 2. Off Leakage
V
SS
0.1F
V
SS
V
OUT
R
300
C
L
L
35pF
V
Test Circuit 4. Switching Times
SS
V
V
OUT
IN
IN
(OFF)
I
D
V
D
ADG601
ADG602
t
ON
NC
Test Circuit 3. On Leakage
50% 50%
50%
90% 90%
50%
SD
NC = NO CONNECT
t
OFF
I
D
(ON)
A
V
D
0.1F
V
DD
IN
V
IN
S
GND
OFF ISOLATION = 20 LOG
Test Circuit 6. Off Isolation
V
V
DD
SS
R
S
V
S
SD
IN
C
1nF
V
OUT
L
GND
V
V
V
OUT
ADG601
IN
ADG602
IN
Q
INJ
ON
= CL V
OUT
V
OFF
OUT
Test Circuit 5. Charge Injection
V
DD
0.1F
V
SS
50
D
V
OUT
V
S
NETWORK
ANALYZER
50
V
S
V
OUT
R
L
50
V
0.1F
V
IN
V
IN
INSERTION LOSS = 20 LOG
V
DD
SS
0.1F
V
DD
SS
S
D
GND
V
V
ANALYZER
R
50
WITH SWITCH
OUT
WITHOUT SWITCH
S
NETWORK
50
V
S
V
OUT
L
Test Circuit 7. Bandwidth
REV. 0
–7–
ADG601/ADG602
OUTLINE DIMENSIONS
Dimensions shown in inches and (mm).
8-Lead Micro-SOIC
(RM-8)
0.122 (3.10)
0.114 (2.90)
0.006 (0.15)
0.002 (0.05)
0.071 (1.80)
0.059 (1.50)
PIN 1
0.051 (1.30)
0.035 (0.90)
0.006 (0.15)
0.000 (0.00)
0.122 (3.10)
0.114 (2.90)
PIN 1
SEATING
PLANE
85
0.0256 (0.65) BSC
0.120 (3.05)
0.112 (2.84)
0.018 (0.46)
0.008 (0.20)
0.199 (5.05)
0.187 (4.75)
41
0.043 (1.09)
0.037 (0.94)
0.011 (0.28)
0.003 (0.08)
0.120 (3.05)
0.112 (2.84)
33
27
6-Lead Plastic Mount SOT-23
(RT-6)
0.122 (3.10)
0.106 (2.70)
2
0.075
(1.90)
BSC
0.020 (0.50)
0.010 (0.25)
4 5
0.037
(0.95) BSC
0.118 (3.00)
0.098 (2.50)
0.057 (1.45)
0.035 (0.90)
SEATING
PLANE
0.009 (0.23)
0.003 (0.08)
6
1 3
0.028 (0.71)
0.016 (0.41)
10
0
C02619–.8–10/01(0)
0.022 (0.55)
0.014 (0.35)
–8–
PRINTED IN U.S.A.
REV. 0
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