ANALOG DEVICES ADG5408 Service Manual
4-/8-Channel Multiplexers
ADG5408/ADG5409
Rev. B
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ADG5408
S1
S8
D
ADG5409
S1A
S4B
DA
DB
S4A
S1B
1-OF-4
DECODER
1-OF-8
DECODER
A0 A1 ENA0 A1 A2 EN
09206-001
Data Sheet
FEATURES
Latch-up proof
8 kV human body model (HBM) ESD rating
Low on resistance (13.5 Ω)
±9 V to ±22 V dual-supply operation
9 V to 40 V single-supply operation
48 V supply maximum ratings
Fully specified at ±15 V, ±20 V, +12 V, and +36 V
V
to VDD analog signal range
SS
APPLICATIONS
Relay replacement
Automatic test equipment
Data acquisition
Instrumentation
Avionics
Audio and video switching
Communication systems
High Voltage Latch-Up Proof,
FUNCTIONAL BLOCK DIAGRAMS
Figure 1.
GENERAL DESCRIPTION
The ADG5408/ADG5409 are monolithic CMOS analog multiplexers comprising eight single channels and four differential
channels, respectively. The ADG5408 switches one of eight
inputs to a common output, as determined by the 3-bit binary
address lines, A0, A1, and A2. The ADG5409 switches one of
four differential inputs to a common differential output, as
determined by the 2-bit binary address lines, A0 and A1.
An EN input on both devices enables or disables the device.
When EN is disabled, all channels switch off. The on-resistance
profile is very flat over the full analog input range, which ensures
good linearity and low distortion when switching audio signals.
High switching speed also makes the parts suitable for video
signal switching.
Each switch conducts equally well in both directions when on,
and each switch has an input signal range that extends to the
power supplies. In the off condition, signal levels up to the
supplies are blocked.
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
The ADG5408/ADG5409 do not have V
pins; rather, the logic
L
power supply is generated internally by an on-chip voltage
generator.
PRODUCT HIGHLIGHTS
1. Tre nch isolation guards against latch-up. A dielectric trench
separates the P and N channel transistors thereby preventing
latch-up even under severe overvoltage conditions.
2. Low R
3. Dual-supply operation. For applications where the analog
signal is bipolar, the ADG5408/ADG5409 can be operated
from dual supplies up to ±22 V.
4. Single-supply operation. For applications where the analog
signal is unipolar, the ADG5408/ADG5409 can be operated
from a single rail power supply up to 40 V.
5. 3 V logic compatible digital inputs: V
6. No V
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
.
ON
logic power supply required.
L
= 2.0 V, V
INH
www.analog.com
INL
= 0.8 V.
ADG5408/ADG5409 Data Sheet
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications ....................................................................................... 1
Functional Block Diagrams ............................................................. 1
General Description ......................................................................... 1
Product Highlights ........................................................................... 1
Revision History ........................................................................... 2
Specifications ..................................................................................... 3
±15 V Dual Supply ....................................................................... 3
±20 V Dual Supply ....................................................................... 4
12 V Single Supply ........................................................................ 5
36 V Single Supply ........................................................................ 6
Continuous Current per Channel, Sx or D ............................... 8
REVISION HISTORY
5/12—Rev. A to Rev. B
Removed Automotive Information (Throughout)....................... 1
Changes to Ordering Guide .......................................................... 22
Deleted Automotive Products Section ......................................... 22
6/11—Rev. 0 to Rev. A
Change to Features Section ............................................................. 1
Change to I
Changes to Figure 3 ........................................................................ 10
Changes to Figure 5 ........................................................................ 11
Updated Outline Dimensions ....................................................... 21
Changes to Ordering Guide .......................................................... 21
Added Automotive Products Section........................................... 21
7/10—Revision 0: Initial Version
Parameter, Table 2 ..................................................... 5
SS
Absolute Maximum Ratings ............................................................9
ESD Caution...................................................................................9
Pin Configurations and Function Descriptions ......................... 10
Typical Performance Characteristics ........................................... 12
Test Circuits ..................................................................................... 16
Terminology .................................................................................... 18
Trench Isolation .............................................................................. 19
Applications Information .............................................................. 20
Outline Dimensions ....................................................................... 21
Ordering Guide .......................................................................... 22
Rev. B | Page 2 of 24
Data Sheet ADG5408/ADG5409
15
18
22
Ω max
VDD = +13.5 V, VSS = −13.5 V
±0.25
±1
±7
nA max
±0.4
±4
±30
nA max
217
258
292
ns max
VS = 10 V; see Figure 32
tON (EN)
140
ns typ
RL = 300 Ω, CL = 35 pF
ADG5409
50
pF typ
VS = 0 V, f = 1 MHz
SPECIFICATIONS
±15 V DUAL SUPPLY
VDD = +15 V ± 10%, VSS = −15 V ± 10%, GND = 0 V, unless otherwise noted.
Table 1.
Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range VDD to VSS V
On Resistance, RON 13.5 Ω typ VS = ±10 V, IS = −10 mA; see Figure 26
On-Resistance Match Between
Channels, ∆R
ON
0.3 Ω typ V
= ±10 V, IS = −10 mA
S
0.8 1.3 1.4 Ω max
On-Resistance Flatness, R
1.8 Ω typ VS = ±10 V, IS = −10 mA
FL AT (ON)
2.2 2.6 3 Ω max
LEAKAGE CURRENTS VDD = +16.5 V, VSS = −16.5 V
Source Off Leakage, IS (Off ) ±0.05 nA typ VS = ±10 V, VD = 10 V; see Figure 29
Drain Off Leakage, ID (Off ) ±0.1 nA typ VS = ±10 V, VD = 10 V; see Figure 29
±0.4 ±4 ±30 nA max
Channel On Leakage, ID (On), IS (On) ±0.1 nA typ VS = VD = ±10 V; see Figure 25
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
Input Current, I
INL
2.0 V min
INH
0.8 V max
INL
or I
0.002 µA typ VIN = V
INH
GND
or VDD
±0.1 µA max
Digital Input Capacitance, CIN 3 pF typ
DYNAMIC CHARACTERISTICS1
Transition Time, t
170 ns typ RL = 300 Ω, CL = 35 pF
TRANSITION
175 213 242 ns max VS = 10 V; see Figure 34
t
(EN) 130 ns typ RL = 300 Ω, CL = 35 pF
OFF
161 183 198 ns max VS = 10 V; see Figure 34
Break-Before-Make Time Delay, tD 50 ns typ RL = 300 Ω, CL = 35 pF
16 ns min VS1 = VS2 = 10 V; see Figure 33
Charge Injection, Q
115 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF;
INJ
see Figure 35
Off Isolation −60 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see
Figure 28
Channel-to-Channel Crosstalk −60 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see
Figure 27
Total Harmonic Distortion + Noise 0.01 % typ RL = 1 kΩ, 15 V p-p, f = 20 Hz to 20 kHz;
see Figure 30
−3 dB Bandwidth RL = 50 Ω, CL = 5 pF; see Figure 31
ADG5408 50 MHz typ
ADG5409 87 MHz typ
Insertion Loss 0.9 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz;
Figure 31
CS (Off ) 15 pF typ VS = 0 V, f = 1 MHz
CD (Off )
ADG5408 102 pF typ VS = 0 V, f = 1 MHz
Rev. B | Page 3 of 24
ADG5408/ADG5409 Data Sheet
DIGITAL INPUTS
11
ns min
VS1 = VS2 = 10 V; see Figure 33
Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments
CD (On), CS (On)
ADG5408 133 pF typ VS = 0 V, f = 1 MHz
ADG5409 81 pF typ VS = 0 V, f = 1 MHz
POWER REQUIREMENTS VDD = +16.5 V, VSS = −16.5 V
IDD 45 µA typ Digital inputs = 0 V or VDD
55 70 µA max
ISS 0.001 µA typ Digital inputs = 0 V or VDD
1 µA max
VDD/VSS ±9/±22 V min/V max GND = 0 V
1
Guaranteed by design; not subject to production test.
±20 V DUAL SUPPLY
VDD = +20 V ± 10%, VSS = −20 V ± 10%, GND = 0 V, unless otherwise noted.
Table 2.
Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range VDD to VSS V
On Resistance, RON 12.5 Ω typ VS = ±15 V, IS = −10 mA; see Figure 26
14 17 21 Ω max VDD = +18 V, VSS = −18 V
On-Resistance Match Between
Channels, ∆R
ON
0.8 1.3 1.4 Ω max
On-Resistance Flatness, R
FL AT (ON)
2.7 3.1 3.5 Ω max
LEAKAGE CURRENTS VDD = +22 V, VSS = −22 V
Source Off Leakage, IS (Off ) ±0.1 nA typ VS = ±15 V, VD = 15 V; see Figure 29
±0.25 ±1 ±7 nA max
Drain Off Leakage, ID (Off ) ±0.15 nA typ VS = ±15 V, VD = 15 V; see Figure 29
±0.4 ±4 ±30 nA max
Channel On Leakage, ID (On), IS (On) ±0.15 nA typ VS = VD = ±15 V; see Figure 25
±0.4 ±4 ±30 nA max
0.3 Ω typ V
= ±15 V, IS = −10 mA
S
2.3 Ω typ VS = ±15 V, IS = −10 mA
Input High Voltage, V
Input Low Voltage, V
Input Current, I
INL
±0.1 µA max
Digital Input Capacitance, CIN 3 pF typ
DYNAMIC CHARACTERISTICS1
Transition Time, t
207 237 262 ns max VS = 10 V; see Figure 32
tON (EN) 140 ns typ RL = 300 Ω, CL = 35 pF
165 194 218 ns max VS = 10 V; see Figure 34
t
(EN) 133 ns typ RL = 300 Ω, CL = 35 pF
OFF
153 174 189 ns max VS = 10 V; see Figure 34
Break-Before-Make Time Delay, tD 38 ns typ RL = 300 Ω, CL = 35 pF
Charge Injection, Q
Off Isolation −60 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see
Channel-to-Channel Crosstalk −60 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz;
2.0 V min
INH
0.8 V max
INL
or I
0.002 µA typ VIN = V
INH
160 ns typ RL = 300 Ω, CL = 35 pF
TRANSITION
155 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF; see
INJ
GND
or VDD
Figure 35
Figure 28
see Figure 27
Rev. B | Page 4 of 24
Data Sheet ADG5408/ADG5409
1 µA max
Input Current, I
or I
0.002
µA typ
VIN = V
or VDD
Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments
Total Harmonic Distortion + Noise 0.012 % typ RL = 1 kΩ, 20 V p-p, f = 20 Hz to 20 kHz;
see Figure 30
−3 dB Bandwidth RL = 50 Ω, CL = 5 pF; see Figure 31
ADG5408 50 MHz typ
ADG5409 88 MHz typ
Insertion Loss 0.8 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz;
see Figure 31
CS (Off ) 17 pF typ VS = 0 V, f = 1 MHz
CD (Off )
ADG5408 98 pF typ VS = 0 V, f = 1 MHz
ADG5409 48 pF typ VS = 0 V, f = 1 MHz
CD (On), CS (On)
ADG5408 128 pF typ VS = 0 V, f = 1 MHz
ADG5409 80 pF typ VS = 0 V, f = 1 MHz
POWER REQUIREMENTS VDD = +22 V, VSS = −22 V
IDD 50 µA typ Digital inputs = 0 V or VDD
70 110 µA max
ISS 0.001 µA typ Digital inputs = 0 V or VDD
VDD/VSS ±9/±22 V min/V max GND = 0 V
1
Guaranteed by design; not subject to production test.
12 V SINGLE SUPPLY
VDD = 12 V ± 10%, VSS = 0 V, GND = 0 V, unless otherwise noted.
Table 3.
Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to VDD V
On Resistance, RON 26 Ω typ VS = 0 V to 10 V, IS = −10 mA; see
Figure 26
30 36 42 Ω max VDD = 10.8 V, VSS = 0 V
On-Resistance Match Between
Channels, ∆R
ON
0.3 Ω typ V
1 1.5 1.6 Ω max
On-Resistance Flatness, R
5.5 Ω typ VS = 0 V to 10 V, IS = −10 mA
FL AT (ON)
6.5 8 12 Ω max
LEAKAGE CURRENTS VDD = 13.2 V, VSS = 0 V
Source Off Leakage, IS (Off ) ±0.02 nA typ VS = 1 V/10 V, VD = 10 V/1 V; see
±0.25 ±1 ±7 nA max
Drain Off Leakage, ID (Off ) ±0.05 nA typ VS = 1 V/10 V, VD = 10 V/1 V; see
±0.4 ±4 ±30 nA max
Channel On Leakage, ID (On), IS (On) ±0.05 nA typ VS = VD = 1 V/10 V; see Figure 25
±0.4 ±4 ±30 nA max
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
INL
2.0 V min
INH
0.8 V max
INL
INH
±0.1 µA max
Digital Input Capacitance, CIN 3 pF typ
= 0 V to 10 V, IS = −10 mA
S
Figure 29
Figure 29
GND
Rev. B | Page 5 of 24
ADG5408/ADG5409 Data Sheet
276
345
397
ns max
VS = 8 V; see Figure 34
4.3
5.5
6.5
Ω max
Source Off Leakage, IS (Off )
±0.1
nA typ
VS = 1 V/30 V, VD = 30 V/1 V; see
Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments
DYNAMIC CHARACTERISTICS1
Transition Time, t
321 388 430 ns max VS = 8 V; see Figure 32
tON (EN) 215 ns typ RL = 300 Ω, CL = 35 pF
t
(EN) 134 ns typ RL = 300 Ω, CL = 35 pF
OFF
161 187 209 ns max VS = 8 V; see Figure 34
Break-Before-Make Time Delay, tD 118 ns typ RL = 300 Ω, CL = 35 pF
55 ns min VS1 = VS2 = 8 V; see Figure 33
Charge Injection, Q
Off Isolation −60 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz;
Channel-to-Channel Crosstalk −60 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz;
Total Harmonic Distortion + Noise 0.1 % typ RL = 1 kΩ, 6 V p-p, f = 20 Hz to 20 kHz;
−3 dB Bandwidth RL = 50 Ω, CL = 5 pF; see Figure 31
ADG5408 35 MHz typ
ADG5409 74 MHz typ
Insertion Loss −1.8 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz;
CS (Off ) 22 pF typ VS = 6 V, f = 1 MHz
CD (Off )
ADG5408 119 pF typ VS = 6 V, f = 1 MHz
ADG5409 59 pF typ VS = 6 V, f = 1 MHz
CD (On), CS (On)
ADG5408 146 pF typ VS = 6 V, f = 1 MHz
ADG5409 86 pF typ VS = 6 V, f = 1 MHz
POWER REQUIREMENTS VDD = 13.2 V
IDD 40 µA typ Digital inputs = 0 V or VDD
50 65 µA max
VDD 9/40 V min/V max GND = 0 V, VSS = 0 V
1
Guaranteed by design; not subject to production test.
230 ns typ RL = 300 Ω, CL = 35 pF
TRANSITION
45 pC typ VS = 6 V, RS = 0 Ω, CL = 1 nF; see
INJ
Figure 35
see Figure 28
see Figure 27
see Figure 30
see Figure 31
36 V SINGLE SUPPLY
VDD = 36 V ± 10%, VSS = 0 V, GND = 0 V, unless otherwise noted.
Table 4.
Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to VDD V
On Resistance, RON 14.5 Ω typ VS = 0 V to 30 V, IS = −10 mA; see
16 19 23 Ω max VDD = 32.4 V, VSS = 0 V
On-Resistance Match Between
Channels, ∆R
0.8 1.3 1.4 Ω max
On-Resistance Flatness, R
LEAKAGE CURRENTS VDD =39.6 V, VSS = 0 V
±0.25 ±1 ±7 nA max
ON
Figure 26
0.3 Ω typ V
3.5 Ω typ VS = 0 V to 30 V, IS = −10 mA
FL AT (ON)
= 0 V to 30 V, IS = −10 mA
S
Figure 29
Rev. B | Page 6 of 24
Data Sheet ADG5408/ADG5409
Input Low Voltage, V
0.8
V max
Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments
Drain Off Leakage, ID (Off ) ±0.15 nA typ VS = 1 V/30 V, VD = 30 V/1 V; see
Figure 29
±0.4 ±4 ±30 nA max
Channel On Leakage, ID (On), IS (On) ±0.15 nA typ VS = VD = 1 V/30 V; see Figure 25
±0.4 ±4 ±30 nA max
DIGITAL INPUTS
Input High Voltage, V
Input Current, I
INL
±0.1 µA max
Digital Input Capacitance, CIN 3 pF typ
DYNAMIC CHARACTERISTICS1
Transition Time, t
242 257 281 ns max VS = 18 V; see Figure 32
tON (EN) 160 ns typ RL = 300 Ω, CL = 35 pF
195 219 237 ns max VS = 18 V; see Figure 34
t
(EN) 147 ns typ RL = 300 Ω, CL = 35 pF
OFF
184 184 190 ns max VS = 18 V; see Figure 34
Break-Before-Make Time Delay, tD 53 ns typ RL = 300 Ω, CL = 35 pF
17 ns min VS1 = VS2 = 18 V; see Figure 33
Charge Injection, Q
Off Isolation −60 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz;
Channel-to-Channel Crosstalk −60 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz;
Total Harmonic Distortion + Noise 0.4 % typ RL = 1 kΩ, 18 V p-p, f = 20 Hz to 20 kHz;
−3 dB Bandwidth RL = 50 Ω, CL = 5 pF; see Figure 31
ADG5408 45 MHz typ
ADG5409 76 MHz typ
Insertion Loss −1 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz;
CS (Off ) 18 pF typ VS = 18 V, f = 1 MH z
CD (Off )
ADG5408 120 pF typ VS = 18 V, f = 1 MH z
ADG5409 60 pF typ VS = 18 V, f = 1 MH z
CD (On), CS (On)
ADG5408 137 pF typ VS = 18 V, f = 1 MH z
ADG5409 80 pF typ VS = 18 V, f = 1 MH z
POWER REQUIREMENTS VDD = 39.6 V
IDD 80 µA typ Digital inputs = 0 V or VDD
100 130 µA max
VDD 9/40 V min/V max GND = 0 V, VSS = 0 V
1
Guaranteed by design; not subject to production test.
2.0 V min
INH
INL
or I
0.002 µA typ VIN = V
INH
187 ns typ RL = 300 Ω, CL = 35 pF
TRANSITION
150 pC typ VS = 18 V, RS = 0 Ω, CL = 1 nF;
INJ
GND
or VDD
see Figure 35
see Figure 28
see Figure 27
see Figure 30
see Figure 31
Rev. B | Page 7 of 24
ADG5408/ADG5409 Data Sheet
LFCSP (θJA = 30.4°C/W)
136
50
16
mA maximum
CONTINUOUS CURRENT PER CHANNEL, Sx OR D
Table 5. ADG5408
Parameter 25°C 85°C 125°C Unit
CONTINUOUS CURRENT, Sx OR D
VDD = +15 V, VSS = −15 V
TSSOP (θJA = 112.6°C/W) 100 44 16 mA maximum
LFCSP (θJA = 30.4°C/W) 170 54 16 mA maximum
VDD = +20 V, VSS = −20 V
TSSOP (θJA = 112.6°C/W) 106 45 16 mA maximum
LFCSP (θJA = 30.4°C/W) 178 55 16 mA maximum
VDD = 12 V, VSS = 0 V
TSSOP (θJA = 112.6°C/W) 81 39 15 mA maximum
LFCSP (θJA = 30.4°C/W) 140 51 16 mA maximum
VDD = 36 V, VSS = 0 V
TSSOP (θJA = 112.6°C/W) 104 44 16 mA maximum
LFCSP (θJA = 30.4°C/W) 175 55 16 mA maximum
Table 6. ADG5409
Parameter 25°C 85°C 125°C Unit
CONTINUOUS CURRENT, Sx OR D
VDD = +15 V, VSS = −15 V
TSSOP (θJA = 112.6°C/W) 75 37 15 mA maximum
LFCSP (θJA = 30.4°C/W) 130 49 16 mA maximum
VDD = +20 V, VSS = −20 V
TSSOP (θJA = 112.6°C/W) 79 38 15 mA maximum
VDD = 12 V, VSS = 0 V
TSSOP (θJA = 112.6°C/W) 60 32 14 mA maximum
LFCSP (θJA = 30.4°C/W) 105 44 16 mA maximum
VDD = 36 V, VSS = 0 V
TSSOP (θJA = 112.6°C/W) 78 38 15 mA maximum
LFCSP (θJA = 30.4°C/W) 133 50 16 mA maximum
Rev. B | Page 8 of 24
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