ANALOG DEVICES ADG5236 Service Manual

High Voltage Latch-Up Proof,

Data Sheet

FEATURES

Latch-up proof

2.5 pF off source capacitance
12 pF off drain capacitance

−0.6 pC charge injection
Low leakage: 0.4 nA maximum at 85°C
±9 V to ±22 V dual-supply operation
9 V to 40 V single-supply operation
48 V supply maximum ratings
Fully specified at ±15 V, ±20 V, +12 V, and +36 V
V

to VDD analog signal range

SS

APPLICATIONS

Automatic test equipment
Data acquisition
Instrumentation
Avio nics
Audio and video switching
Communication systems

Dual SPDT Switches

ADG5236

FUNCTIONAL BLOCK DIAGRAMS

S1A

S1B

IN1

IN2

S2A

S2B

SWITCHES SHOWN FOR A LOGIC 1 INPUT.

S1A

D1

S1B

ADG5236

Figure 1. TSSOP Package

ADG5236

D1

D2

S2A
D2
S2B

09769-001

GENERAL DESCRIPTION

The ADG5236 is a monolithic CMOS device containing two
independently selectable single-pole/double throw (SPDT)
switches. An EN input on the LFCSP package enables or
disables the device. When disabled, all channels switch off. Each
switch conducts equally well in both directions when on and
has an input signal range that extends to the supplies. In the off
condition, signal levels up to the supplies are blocked. Both
switches exhibit break-before-make switching action for use in
multiplexer applications.

The ultralow capacitance and charge injection of these switches
make them ideal solutions for data acquisition and sample-and­hold applications, where low glitch and fast settling are required.
Fast switching speed together with high signal bandwidth make
the device suitable for video signal switching.

LOGIC

IN2 ENIN1

SWITCHES SHOWN F OR A LOGIC 1 INPUT.

Figure 2. LFCSP Package

09769-002

PRODUCT HIGHLIGHTS

1. Trench Isolation Guards Against Latch-Up.

A dielectric trench separates the P and N channel
transistors thereby preventing latch-up even under severe
overvoltage conditions.

2. Ultralow Capacitance and <1 pC Charge Injection.

3. Dual-Supply Operation.

For applications where the analog signal is bipolar, the

ADG5236 can be operated from dual supplies up to ±22 V.

4. Single-Supply Operation.

For applications where the analog signal is unipolar, the

ADG5236 can be operated from a single rail power supply

up to 40 V.

5. 3 V Logic-Compatible Digital Inputs.

V

INH

6. No V

= 2.0 V, V

Logic Power Supply Required.

L

= 0.8 V.

INL

Rev. A

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Fax: [phone] ©2011–2012 Analog Devices, Inc. All rights reserved.

ADG5236 Data Sheet

TABLE OF CONTENTS

Features .............................................................................................. 1

Applications ....................................................................................... 1

Functional Block Diagrams ............................................................. 1

General Description ......................................................................... 1

Product Highlights ........................................................................... 1

Revision History ............................................................................... 2

Specifications ..................................................................................... 3

±15 V Dual Supply ....................................................................... 3

±20 V Dual Supply ....................................................................... 4

12 V Single Supply ........................................................................ 5

36 V Single Supply ........................................................................ 6

Continuous Current per Channel, Sx or Dx ............................. 7

REVISION HISTORY

4/12—Rev. 0 to Rev. A

Updated Outline Dimensions ....................................................... 19

Changes to Ordering Guide .......................................................... 19

7/11—Revision 0: Initial Version

Absolute Maximum Ratings ............................................................8

ESD Caution...................................................................................8

Pin Configurations and Function Descriptions ............................9

Truth Tables for Switches .............................................................9

Typical Performance Characteristics ........................................... 10

Test Circuits ..................................................................................... 14

Terminology .................................................................................... 16

Trench Isolation .............................................................................. 17

Applications Information .............................................................. 18

Outline Dimensions ....................................................................... 19

Ordering Guide .......................................................................... 19

Rev. A | Page 2 of 20

Data Sheet ADG5236

50

65

70

Ω max

0.2

0.4

1.2

Digital Input Capacitance, CIN

3

pF typ

30

ns min

VS1 = VS2 = 10 V, see Figure 31

Channel-to-Channel Crosstalk

−85

dB typ

RL = 50 Ω, CL = 5 pF, f = 1 MHz,

CD (Off )

12

pF typ

VS = 0 V, f = 1 MHz

SPECIFICATIONS

±15 V DUAL SUPPLY

VDD = +15 V ± 10%, VSS = −15 V ± 10%, GND = 0 V, unless otherwise noted.

Table 1.

Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range
On Resistance, RON

On-Resistance Match

Between Channels, ∆R

On-Resistance Flatness, R

ON

FL AT (ON)

VDD to VSS
160
200 250 280

1.4

8 9 10
38

V max
Ω typ VS = ±10 V, IS = −1 mA, see Figure 25
Ω max VDD = +13.5 V, VSS = −13.5 V
Ω typ VS = ±10 V, IS = −1 mA

Ω max
Ω typ VS = ±10 V, IS = −1 mA

LEAKAGE CURRENTS

Source Off Leakage, IS (Off )

Drain Off Leakage, ID (Off )

Channel On Leakage, ID (On), IS (On)

0.01

0.1 0.2 0.4

0.01

0.1 0.4 1.2

0.02

VDD = +16.5 V, VSS = −16.5 V
nA typ

V

= ±10 V, VD = 10 V, see Figure 27

S

nA max
nA typ

V

= ±10 V, VD = 10 V, see Figure 27

S

nA max
nA typ VS = VD = ±10 V, see Figure 24
nA max

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V
Input Current, I

INL

2.0 V min

INH

0.8 V max

INL

or I

0.002 µA typ VIN = V

INH

GND

or VDD

±0.1 µA max

DYNAMIC CHARACTERISTICS1

Transition Time, t

150 ns typ RL = 300 Ω, CL = 35 pF

TRANSITION

230 280 315 ns max VS = 10 V, see Figure 30
tON 170 ns typ RL = 300 Ω, CL = 35 pF
215 265 300 ns max VS = 10 V, see Figure 32
t

160 ns typ RL = 300 Ω, CL = 35 pF

OFF

185 205 225 ns max VS = 10 V, see Figure 32
Break-Before-Make Time Delay, tD 75 ns typ RL = 300 Ω, CL = 35 pF

Charge Injection, Q

−0.6 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF,

INJ

see Figure 33

Off Isolation −85 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz,

see Figure 28

−3 dB Bandwidth 266 MHz typ RL = 50 Ω, CL = 5 pF, see Figure 29
Insertion Loss −7 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz,

CS (Off ) 2.5 pF typ VS = 0 V, f = 1 MHz

CD (On), CS (On) 15 pF typ VS = 0 V, f = 1 MHz

see Figure 26

see Figure 29

Rev. A | Page 3 of 20

ADG5236 Data Sheet

1

µA max

0.1

0.4

1.2

±0.1

µA max

Channel-to-Channel Crosstalk

−85

dB typ

RL = 50 Ω, CL = 5 pF, f = 1 MHz,

Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments

POWER REQUIREMENTS VDD = +16.5 V, VSS = −16.5 V

IDD

ISS

VDD/VSS ±9/±22 V min/V max GND = 0 V

1

Guaranteed by design; not subject to production test.

±20 V DUAL SUPPLY

VDD = +20 V ± 10%, VSS = −20 V ± 10%, GND = 0 V, unless otherwise noted.

Table 2.

Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range
On Resistance, RON

On-Resistance Match

Between Channels, ∆R

On-Resistance Flatness, R

LEAKAGE CURRENTS

Source Off Leakage, IS (Off )

Drain Off Leakage, ID (Off )

Channel On Leakage, ID (On), IS (On)

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V
Input Current, I

or I

INL

ON

FL AT (ON)

2.0 V min

INH

0.8 V max

INL

0.002 µA typ VIN = V

INH

45
55 70

0.001

VDD to VSS
140
160 200 230

1.3

8 9 10
33
45 55 60

0.01

0.1 0.2 0.4

0.01

0.02

0.2 0.4 1.2

µA typ Digital inputs = 0 V or VDD
µA max
µA typ Digital inputs = 0 V or VDD

V max
Ω typ VS = ±15 V, IS = −1 mA, see Figure 25
Ω max VDD = +18 V, VSS = −18 V
Ω typ VS = ±15 V, IS = −1 mA

Ω max
Ω typ VS = ±15 V, IS = −1 mA
Ω max
VDD = +22 V, VSS = −22 V
nA typ

V

= ±15 V, VD = 15 V, see Figure 27

S

nA max
nA typ

V

= ±15 V, VD = 15 V, see Figure 27

S

nA max
nA typ VS = VD = ±15 V, see Figure 24
nA max

or VDD

GND

Digital Input Capacitance, CIN 3 pF typ

DYNAMIC CHARACTERISTICS1

Transition Time, t
210 260 290 ns max VS = 10 V, see Figure 30
tON 150 ns typ RL = 300 Ω, CL = 35 pF
190 235 267 ns max VS = 10 V, see Figure 32
t

155 ns typ RL = 300 Ω, CL = 35 pF

OFF

180 200 215 ns max VS = 10 V, see Figure 32
Break-Before-Make Time Delay, tD 60 ns typ RL = 300 Ω, CL = 35 pF

30 ns min VS1 = VS2 = 10 V, see Figure 31

Charge Injection, Q

Off Isolation −85 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz,

−3 dB Bandwidth 266 MHz typ RL = 50 Ω, CL = 5 pF, see Figure 29
Insertion Loss −7 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz,

150 ns typ RL = 300 Ω, CL = 35 pF

TRANSITION

−0.6 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF, see

INJ

Figure 33

see Figure 28

see Figure 26

see Figure 29

Rev. A | Page 4 of 20

Data Sheet ADG5236

1

3

0.1

0.2

0.4

nA max

Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments

CS (Off ) 2.5 pF typ VS = 0 V, f = 1 MHz
CD (Off ) 12 pF typ VS = 0 V, f = 1 MHz
CD (On), CS (On) 15 pF typ VS = 0 V, f = 1 MHz

POWER REQUIREMENTS VDD = +22 V, VSS = −22 V

IDD

ISS

VDD/VSS ±9/±22 V min/V max GND = 0 V

1

Guaranteed by design; not subject to production test.

12 V SINGLE SUPPLY

VDD = 12 V ± 10%, VSS = 0 V, GND = 0 V, unless otherwise noted.

Table 3.

Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range
On Resistance, RON

On-Resistance Match

Between Channels, ∆R

On-Resistance Flatness, R

LEAKAGE CURRENTS

Source Off Leakage, IS (Off )

ON

FL AT (ON)

50
70 110

0.001

0 V to VDD
350

500 610 700

20 21 22
145
280 335 370

0.01

µA typ Digital inputs = 0 V or VDD
µA max
µA typ Digital inputs = 0 V or VDD
µA max

V max
Ω typ VS = 0 V to 10 V, IS = −1 mA, see

Figure 25
Ω max VDD = 10.8 V, VSS = 0 V
Ω typ VS = 0 V to 10 V, IS = −1 mA

Ω max
Ω typ VS = 0 V to 10 V, IS = −1 mA
Ω max
VDD = 13.2 V, VSS = 0 V
nA typ VS = 1 V/10 V, VD = 10 V/1 V,

see Figure 27

Drain Off Leakage, ID (Off )

0.01

nA typ VS = 1 V/10 V, VD = 10 V/1 V,

see Figure 27

Channel On Leakage, ID (On), IS (On)

0.1 0.4 1.2

0.02

0.2 0.4 1.2

nA max
nA typ VS = VD = 1 V/10 V, see Figure 24
nA max

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V
Input Current, I

INL

2.0 V min

INH

0.8 V max

INL

or I

0.002 µA typ VIN = V

INH

GND

or VDD
±0.1 µA max
Digital Input Capacitance, CIN 3 pF typ

DYNAMIC CHARACTERISTICS1

Transition Time, t

220 ns typ RL = 300 Ω, CL = 35 pF

TRANSITION

390 430 490 ns max VS = 8 V, see Figure 30
tON 275 ns typ RL = 300 Ω, CL = 35 pF
380 440 510 ns max VS = 8 V, see Figure 32
t

160 ns typ RL = 300 Ω, CL = 35 pF

OFF

195 225 245 ns max VS = 8 V, see Figure 32
Break-Before-Make Time Delay, tD 145 ns typ RL = 300 Ω, CL = 35 pF

65 ns min VS1 = VS2 = 8 V, see Figure 31

Charge Injection, Q

−0.6 pC typ VS = 6 V, RS = 0 Ω, CL = 1 nF, see

INJ

Figure 33

Rev. A | Page 5 of 20

ADG5236 Data Sheet

−3 dB Bandwidth

185

MHz typ

RL = 50 Ω, CL = 5 pF, see Figure 29

VDD

9/40

V min/V max

GND = 0 V, VSS = 0 V

ANALOG SWITCH

Drain Off Leakage, ID (Off )

0.01

nA typ

VS = 1 V/30 V, VD = 30 V/1 V,

Input Current, I

or I

0.002

µA typ

VIN = V

or VDD

Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments

Off Isolation −90 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz,

see Figure 28

Channel-to-Channel Crosstalk −90 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz,

see Figure 26

Insertion Loss −11 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz,

see Figure 29
CS (Off ) 3 pF typ VS = 6 V, f = 1 MHz
CD (Off ) 16 pF typ VS = 6 V, f = 1 MHz
CD (On), CS (On) 16 pF typ VS = 6 V, f = 1 MHz

POWER REQUIREMENTS VDD = 13.2 V

IDD

1

Guaranteed by design; not subject to production test.

36 V SINGLE SUPPLY

VDD = 36 V ± 10%, VSS = 0 V, GND = 0 V, unless otherwise noted.

Table 4.

Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments

40
65

µA typ Digital inputs = 0 V or VDD
µA max

Analog Signal Range
On Resistance, RON

0 V to VDD
150

V max
Ω typ VS = 0 V to 30 V, IS = −1 mA,

see Figure 25

On-Resistance Match

Between Channels, ∆R

On-Resistance Flatness, R

LEAKAGE CURRENTS

Source Off Leakage, IS (Off )

ON

FL AT( ON)

170 215 245

1.4

8 9 10
35
50 60 65

0.01

Ω max VDD = 32.4 V, VSS = 0 V
Ω typ VS = 0 V to 30 V, IS = −1 mA

Ω max
Ω typ VS = 0 V to 30 V, IS = −1 mA
Ω max
VDD = 39.6 V, VSS = 0 V
nA typ VS = 1 V/30 V, VD = 30 V/1 V,

see Figure 27

0.1 0.2 0.4

nA max

see Figure 27

Channel On Leakage, ID (On), IS (On)

0.1 0.4 1.2

0.02

0.2 0.4 1.2

nA max
nA typ VS = VD = 1 V/30 V, see Figure 24
nA max

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V

INL

2.0 V min

INH

0.8 V max

INL

INH

GND

±0.1 µA max
Digital Input Capacitance, CIN 3 pF typ

DYNAMIC CHARACTERISTICS1

Transition Time, t

180 ns typ RL = 300 Ω, CL = 35 pF

TRANSITION

250 275 305 ns max VS = 18 V, see Figure 30
tON 170 ns typ RL = 300 Ω, CL = 35 pF
225 265 295 ns max VS = 18 V, see Figure 32

Rev. A | Page 6 of 20