ANALOG DEVICES ADG5233 Service Manual

High Voltage Latch-Up Proof,

S1A

S2A

FEATURES

Latch-up proof

4.5 pF off source capacitance 10 pF off drain capacitance

−0.6 pC charge injection Low on resistance: 160 Ω typical ±9 V to ±22 V dual-supply operation 9 V to 40 V single-supply operation 48 V supply maximum ratings Fully specified at ±15 V, ±20 V, +12 V, and +36 V V

to VSS analog signal range

DD

Human body model (HBM) ESD rating

4 kV I/O port to supplies 1 kV I/O port to I/O port 4 kV all other pins

APPLICATIONS

Automatic test equipment Data acquisition Instrumentation Avio nics Audio and video switching Communication systems

Triple/Quad SPDT Switches

ADG5233/ADG5234

FUNCTIONAL BLOCK DIAGRAMS

ADG5233

S1A

D1

S1B

S2B

D2

S2A

LOGIC

IN1 IN2 IN3 EN

SWITCHES SHOWN FOR A 1 INPUT LO GIC.

Figure 1. ADG5233 TSSOP and LFCSP_VQ

ADG5234

D1

S1B

IN1

IN2

S2B

D2

SWITCHES S HOWN FOR A 1 INPUT LOG IC.

Figure 2. ADG5234 TSSOP

S3B

D3

S3A

S4A

D4

S4B

IN4

IN3

S3B

D3

S3A

09919-001

09919-002

GENERAL DESCRIPTION

The ADG5233 and ADG5234 are monolithic industrial CMOS analog switches comprising three independently selectable single-pole, double throw (SPDT) switches and four independently selectable SPDT switches, respectively.

All channels exhibit break-before-make switching action that prevents momentary shorting when switching channels. An input on the (LFCSP and TSSOP packages) is used to

ADG5233

enable or disable the device. When disabled, all channels are switched off.

The ultralow capacitance and charge injection of these switches make them ideal solutions for data acquisition and sample-andhold applications, where low glitch and fast settling are required. Fast switching speed coupled with high signal bandwidth make these devices suitable for video signal switching.

Rev. 0

Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Anal og Devices for its use, nor for any infringements of patents or ot her rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.

EN

PRODUCT HIGHLIGHTS

1. Trench Isolation Guards Against Latch-Up.

A dielectric trench separates the P and N channel transistors thereby preventing latch-up even under severe overvoltage conditions.

2. Ultralow Capacitance and −0.6 pC Charge Injection.

3. Dual-Supply Operation.

For applications where the analog signal is bipolar, the

ADG5233/ADG5234 can be operated from dual supplies

up to ±22 V.

4. Single-Supply Operation.

For applications where the analog signal is unipolar, the

ADG5233/ADG5234 can be operated from a single-rail

power supply up to 40 V.

5. 3 V Logic-Compatible Digital Inputs.

V

= 2.0 V, V

INH

6. No V

Logic Power Supply Required.

L

= 0.8 V.

INL

ADG5233/ADG5234

REVISION HISTORY

7/11—Revision 0: Initial Version

Continuous Current per Channel, Sx or Dx..............................8

Absolute Maximum Ratings ............................................................9

ESD Caution...................................................................................9

Pin Configurations and Function Descriptions......................... 10

Typical Performance Characteristics........................................... 12

Test Circuits..................................................................................... 16

Terminology .................................................................................... 18

Trench Isolation.............................................................................. 19

Applications Information.............................................................. 20

Outline Dimensions....................................................................... 21

Ordering Guide .......................................................................... 21

Rev. 0 | Page 2 of 24

ADG5233/ADG5234

SPECIFICATIONS

±15 V DUAL SUPPLY

VDD = +15 V ± 10%, VSS = −15 V ± 10%, GND = 0 V, unless otherwise noted.

Table 1.

Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range VDD to VSS V On Resistance, RON 160 Ω typ VS = ±10 V, IS = −1 mA; see Figure 26 200 250 280 Ω max VDD = +13.5 V, VSS = −13.5 V On-Resistance Match Between

Channels, ∆R

ON

3.5 Ω typ V

8 9 10 Ω max On-Resistance Flatness, R

38 Ω typ VS = ±10 V, IS = −1 mA

FLAT (ON)

50 65 70 Ω max

LEAKAGE CURRENTS VDD = +16.5 V, VSS = −16.5 V

Source Off Leakage, IS (Off) ±0.02 nA typ ±0.1 ±0.2 ±0.4 nA max Drain Off Leakage, ID (Off) ±0.02 nA typ ±0.1 ±0.2 ±0.4 nA max Channel On Leakage, ID (On), IS (On) ±0.08 nA typ VS = VD = ±10 V; see Figure 25

±0.2 ±0.3 ±0.9 nA max

DIGITAL INPUTS

Input High Voltage, V

Input Low Voltage, V Input Current, I

INL

2.0

INH

0.8 V max

INL

or I

0.002 μA typ VIN = V

INH

V min

±0.1 μA max Digital Input Capacitance, CIN 3 pF typ

DYNAMIC CHARACTERISTICS1

Transition Time, t

170 ns typ RL = 300 Ω, CL = 35 pF

TRANSITION

210 250 280 ns max VS = 10 V; see Figure 31

tON (EN)

175 ns typ R 215 255 290 ns max VS = 10 V; see Figure 33 t

(EN)

OFF

80 ns typ R 100 115 125 ns max VS = 10 V; see Figure 33

Break-Before-Make Time Delay, tD 60 ns typ RL = 300 Ω, CL = 35 pF

30 ns min VS1 = VS2 = 10 V; see Figure 32

Charge Injection, Q

−0.6 pC typ

INJ

Off Isolation −75 dB typ

Channel-to-Channel Crosstalk −80 dB typ

−3 dB Bandwidth 205 MHz typ RL = 50 Ω, CL = 5 pF; see Figure 30 Insertion Loss −6.3 dB typ

CS (Off) 4.5 pF typ VS = 0 V, f = 1 MHz CD (Off) 10 pF typ VS = 0 V, f = 1 MHz CD (On), CS (On) 15 pF typ VS = 0 V, f = 1 MHz

= ±10 V, IS = −1 mA

S

V

= ±10 V, VD = m10 V; see Figure 28

S

V

= ±10 V, VD = m10 V; see Figure 28

S

or VDD

GND

= 300 Ω, CL = 35 pF

L

= 300 Ω, CL = 35 pF

L

= 0 V, RS = 0 Ω, CL = 1 nF; see

V

S

Figure 34

= 50 Ω, CL = 5 pF, f = 1 MHz; see

R

L

Figure 29

= 50 Ω, CL = 5 pF, f = 1 MHz;

R

L

Figure 27

= 50 Ω, CL = 5 pF, f = 1 MHz;

R

L

see Figure 30

Rev. 0 | Page 3 of 24

ADG5233/ADG5234

Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments

POWER REQUIREMENTS VDD = +16.5 V, VSS = −16.5 V

IDD 45 μA typ Digital inputs = 0 V or VDD 55 70 μA max ISS 0.001 μA typ Digital inputs = 0 V or VDD 1 μA max VDD/VSS ±9/±22 V min/V max GND = 0 V

1

Guaranteed by design; not subject to production test.

±20 V DUAL SUPPLY

VDD = +20 V ± 10%, VSS = −20 V ± 10%, GND = 0 V, unless otherwise noted.

Table 2.

Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range VDD to VSS V On Resistance, RON 140 Ω typ VS = ±15 V, IS = −1 mA; see Figure 26 160 200 230 Ω max VDD = +18 V, VSS = −18 V On-Resistance Match Between

Channels, ∆R

ON

3.5 Ω typ V

8 9 10 Ω max On-Resistance Flatness, R

33 Ω typ VS = ±15 V, IS = −1 mA

FLAT (ON)

45 55 60 Ω max

LEAKAGE CURRENTS VDD = +22 V, VSS = −22 V

Source Off Leakage, IS (Off) ±0.02 nA typ ±0.1 ±0.2 ±0.4 nA max Drain Off Leakage, ID (Off) ±0.02 nA typ ±0.1 ±0.2 ±0.4 nA max Channel On Leakage, ID (On), IS (On) ±0.08 nA typ VS = VD = ±15 V; see Figure 25 ±0.2 ±0.3 ±0.9 nA max

DIGITAL INPUTS

Input High Voltage, V Input Low Voltage, V Input Current, I

INL

2.0 V min

INH

0.8 V max

INL

or I

0.002 μA typ VIN = V

INH

±0.1 μA max Digital Input Capacitance, CIN 3 pF typ

DYNAMIC CHARACTERISTICS1

Transition Time, t

170 ns typ RL = 300 Ω, CL = 35 pF

TRANSITION

200 235 260 ns max VS = 10 V; see Figure 31 tON (EN)

165 ns typ R 200 240 265 ns max VS = 10 V; see Figure 33 t

OFF

(EN)

80 ns typ R 95 105 115 ns max VS = 10 V; see Figure 33

Break-Before-Make Time Delay, tD 50 ns typ RL = 300 Ω, CL = 35 pF

30 ns min VS1 = VS2 = 10 V; see Figure 32

Charge Injection, Q

0 pC typ

INJ

Off Isolation −75 dB typ

Channel-to-Channel Crosstalk −80 dB typ

−3 dB Bandwidth 210 MHz typ RL = 50 Ω, CL = 5 pF; see Figure 30 Insertion Loss −5.5 dB typ

= ±15 V, IS = −1 mA

S

V

= ±15 V, VD = m15 V; see Figure 28

S

V

= ±15 V, VD = m15 V; see Figure 28

S

or VDD

GND

= 300 Ω, CL = 35 pF

L

= 300 Ω, CL = 35 pF

L

= 0 V, RS = 0 Ω, CL = 1 nF; see

V

S

Figure 34

= 50 Ω, CL = 5 pF, f = 1MHz; see

R

L

Figure 29

= 50 Ω, CL = 5 pF, f = 1 MHz; see

R

L

Figure 27

= 50 Ω, CL = 5 pF, f = 1 MHz;

R

L

see Figure 30

Rev. 0 | Page 4 of 24

ADG5233/ADG5234

Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments

CS (Off) 4.5 pF typ VS = 0 V, f = 1 MHz CD (Off) 10 pF typ VS = 0 V, f = 1 MHz CD (On), CS (On) 15 pF typ VS = 0 V, f = 1 MHz

POWER REQUIREMENTS VDD = +22 V, VSS = −22 V

IDD 50 μA typ Digital inputs = 0 V or VDD

70 110 μA max ISS 0.001 μA typ Digital inputs = 0 V or VDD 1 μA max VDD/VSS ±9/±22 V min/V max GND = 0 V

1

Guaranteed by design; not subject to production test.

12 V SINGLE SUPPLY

VDD = 12 V ± 10%, VSS = 0 V, GND = 0 V, unless otherwise noted.

Table 3.

Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 V to VDD V On Resistance, RON 360 Ω typ

500 610 700 Ω max VDD = 10.8 V, VSS = 0 V On-Resistance Match Between

Channels, ∆R

ON

5.5 Ω typ V

20 21 22 Ω max On-Resistance Flatness, R

170 Ω typ VS = 0 V to 10 V, IS = −1 mA

FLAT (ON)

280 335 370 Ω max

LEAKAGE CURRENTS VDD = 13.2 V, VSS = 0 V

Source Off Leakage, IS (Off) ±0.02 nA typ

±0.1 ±0.2 ±0.4 nA max Drain Off Leakage, ID (Off) ±0.02 nA typ

±0.1 ±0.2 ±0.4 nA max Channel On Leakage, ID (On), IS (On) ±0.08 nA typ VS = VD = 1 V/10 V; see Figure 25

±0.2 ±0.3 ±0.9 nA max

DIGITAL INPUTS

Input High Voltage, V Input Low Voltage, V Input Current, I

INL

2.0 V min

INH

0.8 V max

INL

or I

0.002 μA typ VIN = V

INH

±0.1 μA max Digital Input Capacitance, CIN 3 pF typ

DYNAMIC CHARACTERISTICS1

Transition Time, t

235 ns typ RL = 300 Ω, CL = 35 pF

TRANSITION

295 365 410 ns max VS = 8 V; see Figure 31 tON (EN)

240 ns typ R 305 380 430 ns max VS = 8 V; see Figure 33 t

(EN)

OFF

70 ns typ R 90 105 115 ns max VS = 8 V; see Figure 33

Break-Before-Make Time Delay, tD 125 ns typ RL = 300 Ω, CL = 35 pF

65 ns min VS1 = VS2 = 8 V; see Figure 32

Charge Injection, Q

0 pC typ

INJ

= 0 V to 10 V, IS = −1 mA; see

V

S

Figure 26

= 0 V to 10 V, IS = −1 mA

S

= 1 V/10 V, VD = 10 V/1 V; see

V

S

Figure 28

= 1 V/10 V, VD = 10 V/1 V; see

V

S

Figure 28

or VDD

GND

= 300 Ω, CL = 35 pF

L

= 300 Ω, CL = 35 pF

L

= 6 V, RS = 0 Ω, CL = 1 nF; see

V

S

Figure 34

Rev. 0 | Page 5 of 24

ADG5233/ADG5234

Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments

Off Isolation −75 dB typ

Channel-to-Channel Crosstalk −80 dB typ

−3 dB Bandwidth 172 MHz typ

Insertion Loss −8.7 dB typ

CS (Off) 5 pF typ VS = 6 V, f = 1 MHz CD (Off) 11 pF typ VS = 6 V, f = 1 MHz CD (On), CS (On) 16 pF typ VS = 6 V, f = 1 MHz

POWER REQUIREMENTS VDD = 13.2 V

IDD 40 μA typ Digital inputs = 0 V or VDD

50 65 μA max

VDD 9/40 V min/V max GND = 0 V, VSS = 0 V

1

Guaranteed by design; not subject to production test.

36 V SINGLE SUPPLY

VDD = 36 V ± 10%, VSS = 0 V, GND = 0 V, unless otherwise noted.

Table 4.

Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 V to VDD V On Resistance, RON 140 Ω typ

170 215 245 Ω max VDD = 32.4 V, VSS = 0 V On-Resistance Match Between

Channels, ∆R

ON

8 9 10 Ω max On-Resistance Flatness, R

35 Ω typ VS = 0 V to 30 V, IS = −1 mA

FLAT (ON)

50 60 65 Ω max

LEAKAGE CURRENTS VDD = 39.6 V, VSS = 0 V

Source Off Leakage, IS (Off) ±0.02 nA typ

±0.1 ±0.2 ±0.4 nA max Drain Off Leakage, ID (Off) ±0.02 nA typ

±0.1 ±0.2 ±0.4 nA max Channel On Leakage, ID (On), IS (On) ±0.08 nA typ VS = VD = 1 V/30 V; see Figure 25 ±0.2 ±0.3 ±0.9 nA max

DIGITAL INPUTS

Input High Voltage, V Input Low Voltage, V Input Current, I

INL

2.0 V min

INH

0.8 V max

INL

or I

0.002 μA typ VIN = V

INH

±0.1 μA max Digital Input Capacitance, CIN 3 pF typ

DYNAMIC CHARACTERISTICS1

Transition Time, t

205 ns typ RL = 300 Ω, CL = 35 pF

TRANSITION

255 275 290 ns max VS = 18 V; see Figure 31 tON (EN) 240 265 290 ns max VS = 18 V; see Figure 33 t

(EN)

OFF

115 115 115 ns max VS = 18 V; see Figure 33

3.5 Ω typ VS = 0 V to 30 V, IS = −1 mA

200 ns typ R

85 ns typ R

= 50 Ω, CL = 5 pF, f = 1 MHz; see

R

L

Figure 29

= 50 Ω, CL = 5 pF, f = 1 MHz; see

R

L

Figure 27

= 50 Ω, CL = 5 pF; see

R

L

Figure 30

= 50 Ω, CL = 5 pF, f = 1 MHz; see

R

L

Figure 30

= 0 V to 30 V, IS = −1 mA; see

V

S

Figure 26

= 1 V/30 V, VD = 30 V/1 V; see

V

S

Figure 28

= 1 V/30 V, VD = 30 V/1 V; see

V

S

Figure 28

or VDD

GND

= 300 Ω, CL = 35 pF

L

= 300 Ω, CL = 35 pF

L

Rev. 0 | Page 6 of 24

ADG5233/ADG5234

Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments

Break-Before-Make Time Delay, tD 65 ns typ RL = 300 Ω, CL = 35 pF

35 ns min VS1 = VS2 = 18 V; see Figure 32

Charge Injection, Q

Off Isolation −75 dB typ

Channel-to-Channel Crosstalk −80 dB typ

−3 dB Bandwidth 190 MHz typ RL = 50 Ω, CL = 5 pF; see Figure 30 Insertion Loss −5.9 dB typ

CS (Off) 4.5 pF typ VS = 18 V, f = 1 MHz CD (Off) 10 pF typ VS = 18 V, f = 1 MHz CD (On), CS (On) 15 pF typ VS = 18 V, f = 1 MHz

POWER REQUIREMENTS VDD = 39.6 V

IDD 80 μA typ Digital inputs = 0 V or VDD

100 130 μA max

VDD 9/40 V min/V max GND = 0 V, VSS = 0 V

1

Guaranteed by design; not subject to production test.

−0.6 pC typ

INJ

= 18 V, RS = 0 Ω, CL = 1 nF;

V

S

see Figure 34

= 50 Ω, CL = 5 pF, f = 1 MHz;

R

L

see Figure 29

= 50 Ω, CL = 5 pF, f = 1 MHz;

R

L

see Figure 27

= 50 Ω, CL = 5 pF, f = 1 MHz;

R

L

see Figure 30

Rev. 0 | Page 7 of 24

ADG5233/ADG5234

CONTINUOUS CURRENT PER CHANNEL, Sx OR Dx

Table 5. ADG5233

Parameter 25°C 85°C 125°C Unit

CONTINUOUS CURRENT, Sx OR Dx

VDD = +15 V, VSS = −15 V

TSSOP (θJA = 112.6°C/W) 24 16 11 mA maximum LFCSP (θJA = 30.4°C/W) 42 26.5 15 mA maximum

VDD = +20 V, VSS = −20 V

TSSOP (θJA = 112.6°C/W) 26 17 11 mA maximum LFCSP (θJA = 30.4°C/W) 46 28 15 mA maximum

VDD = 12 V, VSS = 0 V

TSSOP (θJA = 112.6°C/W) 17 12 7.7 mA maximum LFCSP (θJA = 30.4°C/W) 24 17 11 mA maximum

VDD = 36 V, VSS = 0 V

TSSOP (θJA = 112.6°C/W) 25 17 11 mA maximum LFCSP (θJA = 30.4°C/W) 45 28 15 mA maximum

Table 6. ADG5234

Parameter 25°C 85°C 125°C Unit

CONTINUOUS CURRENT, Sx OR Dx

VDD = +15 V, VSS = −15 V

TSSOP (θJA = 112.6°C/W) 21 15 10 mA maximum

VDD = +20 V, VSS = −20 V

TSSOP (θJA = 112.6°C/W) 22 15 10 mA maximum

VDD = 12 V, VSS = 0 V

TSSOP (θJA = 112.6°C/W) 15 11 7 mA maximum

VDD = 36 V, VSS = 0 V

TSSOP (θJA = 112.6°C/W) 22 15 10 mA maximum

Rev. 0 | Page 8 of 24

ANALOG DEVICES ADG5233 Service Manual

Specifications and Main Features

Frequently Asked Questions

User Manual

FEATURES

APPLICATIONS

FUNCTIONAL BLOCK DIAGRAMS

GENERAL DESCRIPTION

PRODUCT HIGHLIGHTS

TABLE OF CONTENTS

REVISION HISTORY

SPECIFICATIONS

±15 V DUAL SUPPLY

±20 V DUAL SUPPLY

12 V SINGLE SUPPLY

36 V SINGLE SUPPLY

CONTINUOUS CURRENT PER CHANNEL, Sx OR Dx