ANALOG DEVICES ADG5212 Service Manual

High Voltage Latch-Up Proof,

3

FEATURES

Latch-up proof
3 pF off source capacitance
5 pF off drain capacitance

0.07 pC charge injection
Low leakage: 0.2 nA maximum at 85ºC
±9 V to ±22 V dual-supply operation
9 V to 40 V single-supply operation
48 V supply maximum ratings
Fully specified at ±15 V, ±20 V, +12 V, and +36 V
V

to VDD analog signal range

SS

APPLICATIONS

Automatic test equipment
Data acquisition
Instrumentation
Avio nics
Audio and video switching
Communication systems

Quad SPST Switches

ADG5212/ADG5213

FUNCTIONAL BLOCK DIAGRAMS

S1

IN1

IN2

ADG5212

IN

IN4

SWITCHES SHOWN FO R A LOGIC 1 INPUT.

D1

S2

D2

S3

D3

S4

D4

Figure 1.

IN1

IN2

ADG5213

IN3

IN4

S1

D1

S2

D2

S3

D3

S4

D4

09767-001

GENERAL DESCRIPTION

The ADG5212/ADG5213 contain four independent single­pole/single-throw (SPST) switches. The ADG5212 switches
turn on with Logic 1. The ADG5213 has two switches with
digital control logic similar to that of the ADG5212; however,
the logic is inverted on the other two switches. Each switch
conducts equally well in both directions when on, and each
switch has an input signal range that extends to the supplies.
In the off condition, signal levels up to the supplies are blocked.

The ADG5212 and ADG5213 do not have a V
inputs are compatible with 3 V logic inputs over the full
operating supply range.

The ultralow capacitance and charge injection of these switches
make them ideal solutions for data acquisition and sample-and­hold applications, where low glitch and fast settling are required.
Fast switching speed together with high signal bandwidth make
the parts suitable for video signal switching.

pin. The digital

L

PRODUCT HIGHLIGHTS

1. Trench Isolation Guards Against Latch-Up.

A dielectric trench separates the P and N channel transistors,
thereby preventing latch-up even under severe overvoltage
conditions.

2. Ultralow Capacitance and <1 pC Charge Injection.

3. Dual-Supply Operation.

For applications where the analog signal is bipolar, the
ADG5212/ADG5213 can be operated from dual supplies of
up to ±22 V.

4. Single-Supply Operation.

For applications where the analog signal is unipolar, the
ADG5212/ADG5213 can be operated from a single rail
power supply of up to 40 V.

5. 3 V Logic-Compatible Digital Inputs.

V

INH

6. No V

= 2.0 V, V

Logic Power Supply Required.

L

= 0.8 V.

INL

Rev. 0

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rights of third parties that may result from its use. Specifications subject to change without notice. No
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Fax: [phone] ©2011 Analog Devices, Inc. All rights reserved.

ADG5212/ADG5213

TABLE OF CONTENTS

Features.............................................................................................. 1

Applications....................................................................................... 1

Functional Block Diagrams............................................................. 1

General Description ......................................................................... 1

Product Highlights ........................................................................... 1

Revision History ............................................................................... 2

Specifications..................................................................................... 3

±15 V Dual Supply ....................................................................... 3

±20 V Dual Supply ....................................................................... 4

12 V Single Supply........................................................................ 5

36 V Single Supply........................................................................ 6

REVISION HISTORY

4/11—Revision 0: Initial Version

Continuous Current per Channel, Sx or Dx..............................7

Absolute Maximum Ratings ............................................................8

ESD Caution...................................................................................8

Pin Configurations and Function Descriptions............................9

Typical Performance Characteristics........................................... 10

Test Circuits..................................................................................... 14

Terminology .................................................................................... 16

Trench Isolation.............................................................................. 17

Applications Information.............................................................. 18

Outline Dimensions....................................................................... 19

Ordering Guide .......................................................................... 19

Rev. 0 | Page 2 of 20

ADG5212/ADG5213

SPECIFICATIONS

±15 V DUAL SUPPLY

VDD = +15 V ± 10%, VSS = −15 V ± 10%, GND = 0 V, unless otherwise noted.

Table 1.

Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range VDD to VSS V max
On Resistance, RON 160 Ω typ VS = ±10 V, IS = −1 mA,

200 250 280 Ω max VDD = +13.5 V, VSS = −13.5 V
On-Resistance Match Between Channels, ∆RON 2 Ω typ VS = ±10 V, IS = −1 mA
8 9 10 Ω max
On-Resistance Flatness, R

38 Ω typ VS = ±10 V, IS = −1 mA

FLAT(ON)

50 65 70 Ω max
LEAKAGE CURRENTS VDD = +16.5 V, VSS = −16.5 V

Source Off Leakage, IS (Off) 0.01 nA typ

0.1 0.2 0.4 nA max
Drain Off Leakage, ID (Off) 0.01 nA typ

0.1 0.2 0.4 nA max
Channel On Leakage, ID (On), IS (On) 0.02 nA typ VS = VD = ±10 V, see Figure 26

0.2 0.25 0.9 nA max
DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V
Input Current, I

2.0 V min

INH

0.8 V max

INL

or I

0.002 μA typ VIN = V

INL

INH

±0.1 μA max
Digital Input Capacitance, CIN 3 pF typ

DYNAMIC CHARACTERISTICS1

tON 175 ns typ RL = 300 Ω, CL = 35 pF
210 255 280 ns max VS = 10 V, see Figure 30
t

140 ns typ RL = 300 Ω, CL = 35 pF

OFF

170 195 215 ns max VS = 10 V, see Figure 30
Break-Before-Make Time Delay, tD

40 ns typ RL = 300 Ω, CL = 35 pF

(ADG5213 Only)
20 ns min VS1 = VS2 = 10 V, see Figure 29
Charge Injection, Q

0.07 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF,

INJ

Off Isolation −105 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz,

Channel-to-Channel Crosstalk −105 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz,

−3 dB Bandwidth 435 MHz typ RL = 50 Ω, CL = 5 pF, see Figure 28
Insertion Loss −6.8 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz,

CS (Off) 3 pF typ VS = 0 V, f = 1 MHz
CD (Off) 5 pF typ VS = 0 V, f = 1 MHz
CD (On), CS (On) 8 pF typ VS = 0 V, f = 1 MHz

POWER REQUIREMENTS VDD = +16.5 V, VSS = −16.5 V

IDD 45 μA typ Digital inputs = 0 V or VDD
55 70 μA max
ISS 0.001 μA typ Digital inputs = 0 V or VDD
1 μA max
VDD/VSS ±9/±22 V min/V max GND = 0 V

1

Guaranteed by design; not subject to production test.

see Figure 24

V

= ±10 V, VD = ∓10 V,

S

see Figure 23

V

= ±10 V, VD = ∓10 V,

S

see Figure 23

or VDD

GND

see Figure 31

see Figure 25

see Figure 27

see Figure 28

Rev. 0 | Page 3 of 20

ADG5212/ADG5213

±20 V DUAL SUPPLY

VDD = +20 V ± 10%, VSS = −20 V ± 10%, GND = 0 V, unless otherwise noted.

Table 2.

Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range VDD to VSS V max
On Resistance, RON 140 Ω typ

160 200 230 Ω max VDD = +18 V, VSS = −18 V
On-Resistance Match Between

Channels, ∆R

ON

1.5 Ω typ VS = ±15 V, IS = −1 mA

8 9 10 Ω max
On-Resistance Flatness, R

33 Ω typ VS = ±15 V, IS = −1 mA

FLAT(ON)

45 55 60 Ω max
LEAKAGE CURRENTS VDD = +22 V, VSS = −22 V

Source Off Leakage, IS (Off) 0.01 nA typ

0.1 0.2 0.4 nA max
Drain Off Leakage, ID (Off) 0.01 nA typ

0.1 0.2 0.4 nA max
Channel On Leakage, ID (On), IS (On) 0.02 nA typ VS = VD = ±15 V, see Figure 26

0.2 0.25 0.9 nA max

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V
Input Current, I

INL

2.0 V min

INH

0.8 V max

INL

or I

0.002 μA typ VIN = V

INH

±0.1 μA max
Digital Input Capacitance, CIN 3 pF typ

DYNAMIC CHARACTERISTICS1

tON 155 ns typ RL = 300 Ω, CL = 35 pF
195 235 255 ns max VS = 10 V, see Figure 30
t

145 ns typ RL = 300 Ω, CL = 35 pF

OFF

165 185 210 ns max VS = 10 V, see Figure 30
Break-Before-Make Time Delay, tD

35 ns typ R

(ADG5213 Only)
20 ns min VS1 = VS2 = 10 V, see Figure 29
Charge Injection, Q

−0.5 pC typ

INJ

Off Isolation −105 dB typ

Channel-to-Channel Crosstalk −105 dB typ

−3 dB Bandwidth 460 MHz typ

Insertion Loss −6 dB typ

CS (Off) 2.8 pF typ VS = 0 V, f = 1 MHz
CD (Off) 4.8 pF typ VS = 0 V, f = 1 MHz
CD (On), CS (On) 8 pF typ VS = 0 V, f = 1 MHz

= ±15 V, IS = −1 mA,

V

S

see Figure 24

V

= ±15 V, VD = ∓15 V,

S

Figure 23

see

V

= ±15 V, VD = ∓15 V,

S

Figure 23

see

or VDD

GND

= 300 Ω, CL = 35 pF

L

= 0 V, RS = 0 Ω, CL = 1 nF,

V

S

see Figure 31

= 50 Ω, CL = 5 pF, f = 1 MHz,

R

L

see Figure 25

= 50 Ω, CL = 5 pF, f = 1 MHz,

R

L

see Figure 27

= 50 Ω, CL = 5 pF, see

R

L

Figure 28

= 50 Ω, CL = 5 pF, f = 1 MHz,

R

L

see Figure 28

Rev. 0 | Page 4 of 20

ADG5212/ADG5213

Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments

POWER REQUIREMENTS VDD = +22 V, VSS = −22 V

IDD 50 μA typ Digital inputs = 0 V or VDD
70 110 μA max
ISS 0.001 μA typ Digital inputs = 0 V or VDD
1 μA max
VDD/VSS ±9/±22 V min/V max GND = 0 V

1

Guaranteed by design; not subject to production test.

12 V SINGLE SUPPLY

VDD = 12 V ± 10%, VSS = 0 V, GND = 0 V, unless otherwise noted.

Table 3.

Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 V to VDD V max
On Resistance, RON 350 Ω typ VS = 0 V to 10 V, IS = −1 mA,

see

Figure 24

500 610 700 Ω max VDD = 10.8 V, VSS = 0 V
On-Resistance Match Between Channels, ∆RON 4 Ω typ VS = 0 V to 10 V, IS = −1 mA
20 21 22 Ω max

On-Resistance Flatness, R
280 335 370 Ω max
LEAKAGE CURRENTS VDD = 13.2 V, VSS = 0 V

Source Off Leakage, IS (Off) 0.01 nA typ VS = 1 V/10 V, VD = 10 V/1 V,

0.1 0.2 0.4 nA max

Drain Off Leakage, ID (Off) 0.01 nA typ VS = 1 V/10 V, VD = 10 V/1 V,

0.1 0.2 0.4 nA max

Channel On Leakage, ID (On), IS (On) 0.02 nA typ VS = VD = 1 V/10 V,

0.2 0.25 0.9 nA max
DIGITAL INPUTS

Input High Voltage, V

Input Low Voltage, V

Input Current, I

INH

INL

or I

INL

INH

±0.1 μA max

Digital Input Capacitance, CIN 3 pF typ
DYNAMIC CHARACTERISTICS1

tON 235 ns typ RL = 300 Ω, CL = 35 pF

290 360 410 ns max VS = 8 V, see Figure 30

t

165 ns typ RL = 300 Ω, CL = 35 pF

OFF

205 235 260 ns max VS = 8 V, see Figure 30

Break-Before-Make Time Delay, tD

(ADG5213 Only)
50 ns min VS1 = VS2 = 8 V, see Figure 29
Charge Injection, Q

−0.5 pC typ VS = 6 V, RS = 0 Ω, CL = 1 nF,

INJ

Off Isolation −105 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz,

Channel-to-Channel Crosstalk −105 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz,

−3 dB Bandwidth 340 MHz typ RL = 50 Ω, CL = 5 pF, see

160 Ω typ VS = 0 V to 10 V, IS = −1 mA

FLAT(ON)

see Figure 23

see Figure 23

see Figure 26

2.0 V min

0.8 V max

0.002 μA typ VIN = V

GND

85 ns typ RL = 300 Ω, CL = 35 pF

see Figure 31

see Figure 25

see Figure 27

Figure 28

or VDD

Rev. 0 | Page 5 of 20

ADG5212/ADG5213

Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments

Insertion Loss −11 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz,

CS (Off) 3.5 pF typ VS = 6 V, f = 1 MHz
CD (Off) 5.5 pF typ VS = 6 V, f = 1 MHz
CD (On), CS (On) 9 pF typ VS = 6 V, f = 1 MHz

POWER REQUIREMENTS VDD = 13.2 V

IDD 40 μA typ Digital inputs = 0 V or VDD
65 μA max
VDD 9/40 V min/V max GND = 0 V, VSS = 0 V

1

Guaranteed by design; not subject to production test.

36 V SINGLE SUPPLY

VDD = 36 V ± 10%, VSS = 0 V, GND = 0 V, unless otherwise noted.

Table 4.

Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 V to VDD V max
On Resistance, RON 150 Ω typ VS = 0 V to 30 V, IS = −1 mA,

170 215 245 Ω max VDD = 32.4 V, VSS = 0 V
On-Resistance Match Between Channels, ∆RON 1.6 Ω typ VS = 0 V to 30 V, IS = −1 mA
8 9 10 Ω max

On-Resistance Flatness, R
50 60 65 Ω max
LEAKAGE CURRENTS VDD =39.6 V, VSS = 0 V

Source Off Leakage, IS (Off) 0.01 nA typ VS = 1 V/30 V, VD = 30 V/1 V,

0.1 0.2 0.4 nA max

Drain Off Leakage, ID (Off) 0.01 nA typ VS = 1 V/30 V, VD = 30 V/1 V,

0.1 0.2 0.4 nA max

Channel On Leakage, ID (On), IS (On) 0.02 nA typ VS = VD = 1 V/30 V,

0.2 0.25 0.9 nA max
DIGITAL INPUTS

Input High Voltage, V

Input Low Voltage, V

Input Current, I

INH

INL

or I

INL

INH

±0.1 μA max

Digital Input Capacitance, CIN 3 pF typ
DYNAMIC CHARACTERISTICS1

tON 190 ns typ RL = 300 Ω, CL = 35 pF

230 255 265 ns max VS = 18 V, see Figure 30

t

175 ns typ RL = 300 Ω, CL = 35 pF

OFF

215 230 245 ns max VS = 18 V, see Figure 30

Break-Before-Make Time Delay, tD

(ADG5213 Only)
25 ns min VS1 = VS2 = 18 V, see Figure 29
Charge Injection, Q

−0.5 pC typ VS = 18 V, RS = 0 Ω, CL = 1 nF,

INJ

Off Isolation −105 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz,

Channel-to-Channel Crosstalk −105 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz,

35 Ω typ VS = 0 V to 30 V, IS = −1 mA

FLAT(ON)

2.0 V min

0.8 V max

0.002 μA typ VIN = V

45 ns typ RL = 300 Ω, CL = 35 pF

see Figure 28

see Figure 24

see Figure 23

see Figure 23

see Figure 26

or VDD

GND

see Figure 31

see Figure 25

Figure 27

Rev. 0 | Page 6 of 20