Analog Devices ADG512BN, ADG512ABR, ADG511BR, ADG511BN, ADG511ABR Datasheet

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FUNCTIONAL BLOCK DIAGRAMS

IN1

IN2

IN3

IN4

D1 S2

D2 S3

D3 S4

ADG511

IN1

IN2

IN3

IN4

D1 S2

D2 S3

D3 S4

ADG512

IN1

IN2

IN3

IN4

D2 S3

D3 S4

ADG513

SWITCHES SHOWN FOR A LOGIC "1" INPUT

REV. C

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LC2MOS

Precision 5 V/3 V Quad SPST Switches

ADG511/ADG512/ADG513

FEATURES +3 V, +5 V or 5 V Power Supplies Ultralow Power Dissipation (<0.5 W) Low Leakage (<100 pA) Low On Resistance (<50 ) Fast Switching Times Low Charge Injection TTL/CMOS Compatible 16-Lead DIP or SOIC Package

APPLICATIONS Battery-Powered Instruments Single Supply Systems Remote Powered Equipment 5 V Supply Systems Computer Peripherals such as Disk Drives Precision Instrumentation Audio and Video Switching Automatic Test Equipment Precision Data Acquisition Sample Hold Systems Communication Systems Compatible with 5 V Supply DACs and ADCs such as

AD7840/AD7848, AD7870/AD7871/AD7872/AD7874/ AD7875/AD7876/AD7878

GENERAL DESCRIPTION

The ADG511, ADG512 and ADG513 are monolithic CMOS ICs containing four independently selectable analog switches. These switches feature low, well-controlled on resistance and wide analog signal range, making them ideal for precision analog signal switching.

These switch arrays are fabricated using Analog Devices’ advanced linear compatible CMOS (LC

MOS) process which offers the additional benefits of low leakage currents, ultralow power dissipation and low capacitance for fast switching speeds with minimum charge injection. These features make the ADG511, ADG512 and ADG513 the optimum choice for a wide variety of signal switching tasks in precision analog signal processing and data acquisition systems.

The ability to operate from single +3 V, +5 V or ±5 V bipolar supplies make the ADG511, ADG512 and ADG513 perfect for use in battery-operated instruments, 4–20 mA loop systems and with the new generation of DACs and ADCs from Analog Devices. The use of 5 V supplies and reduced operating currents give much lower power dissipation than devices operating from ± 15 V supplies.

The ADG511, ADG512 and ADG513 contain four independent SPST switches. The ADG511 and ADG512 differ only in that the digital control logic is inverted. The ADG511 switch is turned on with a logic low on the appropriate control input, while a logic high is required for the ADG512. The ADG513 contains two switches whose digital control logic is similar to that of the ADG511 while the logic is inverted in the remaining two switches.

PRODUCT HIGHLIGHTS

1. 5 Volt Single Supply Operation The ADG511/ADG512/ADG513 offers high performance, including low on resistance and wide signal range, fully specified and guaranteed with +3 V, ±5 V as well as +5 V supply rails.

2. Ultralow Power Dissipation CMOS construction ensures ultralow power dissipation.

3. Low R

4. Break-Before-Make Switching Switches are guaranteed to have break-before-make operation. This allows multiple outputs to be tied together for multiplexer applications without the possibility of momentary shorting between channels.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 www.analog.com Fax: 781/326-8703 © Analog Devices, Inc., 2001

Dual Supply

B Versions T Version

–40C to –55C to

Parameter 25C +85C25C +125C Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range V

to V

VDD to VSSV

30 30 Ω typ VD = ± 3.5 V, IS = –10 mA;

50 50 Ω max VDD = +4.5 V, VSS = –4.5 V

LEAKAGE CURRENTS VDD = +5.5 V, VSS = –5.5 V

Source OFF Leakage I

(OFF) ± 0.025 ± 0.025 nA typ VD = ± 4.5 V, VS = ⫿4.5 V;

± 0.1 ± 2.5 ± 0.1 ± 2.5 nA max Test Circuit 2

Drain OFF Leakage I

(OFF) ± 0.025 ± 0.025 nA typ VD = ± 4.5 V, VS = ⫿4.5 V;

± 0.1 ± 2.5 ± 0.1 ± 2.5 nA max Test Circuit 2

Channel ON Leakage I

, IS (ON) ± 0.05 ± 0.05 nA typ VD = VS = ± 4.5 V;

± 0.2 ± 5 ± 0.2 ± 5 nA max Test Circuit 3

DIGITAL INPUTS

Input High Voltage, V

INH

2.4 2.4 V min

Input Low Voltage, V

INL

0.8 0.8 V max

Input Current

INL

or I

INH

0.005 0.005 µA typ VIN = V

INL

or V

INH

± 0.1 ± 0.1 µA max

DYNAMIC CHARACTERISTICS

200 200 ns typ RL = 300 Ω. CL = 35 pF;

375 375 ns max V

= ± 3 V; Test Circuit 4

OFF

120 120 ns typ RL = 300 Ω. CL = 35 pF;

150 150 ns max V

= ± 3 V; Test Circuit 4

Break-Before-Make Time 100 100 ns typ R

= 300 Ω, CL = 35 pF;

Delay, t

(ADG513 Only) VS1 = VS2 = 3 V; Test Circuit 5

Charge Injection 11 11 pC typ V

= 0 V, RS = 0 Ω, CL = 10 nF;

Test Circuit 6

OFF Isolation 68 68 dB typ R

= 50 Ω, CL = 5 pF, f = 1 MHz;

Test Circuit 7

Channel-to-Channel Crosstalk 85 85 dB typ R

= 50 Ω, CL = 5 pF, f = 1 MHz;

Test Circuit 8

(OFF) 9 9 pF typ f = 1 MHz

CD, CS (ON) 35 35 pF typ f = 1 MHz

POWER REQUIREMENTS

+4.5/5.5 +4.5/5.5 V min/max

–4.5/–5.5 –4.5/–5.5 V min/max

0.0001 0.0001 µA typ VDD = +5.5 V, VSS = –5.5 V 11µA max Digital Inputs = 0 V or 5 V

0.0001 0.0001 µA typ 11µA max

NOTES

Temperature ranges are as follows: B Versions –40°C to +85°C; T Version –55°C to +125°C.

Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

REV. C–2–

(VDD = +5 V  10%, VSS = –5 V  10%, GND = 0 V, unless otherwise noted)

ADG511/ADG512/ADG513–SPECIFICATIONS

Single Supply

B Versions T Version

–40C to –55C to

Parameter 25C +85C25C +125C Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 V to V

0 V to VDDV

45 45 Ω typ VD = 3.5 V, IS = –10 mA;

75 75 Ω max VDD = 4.5 V

LEAKAGE CURRENTS V

= 5.5 V

Source OFF Leakage I

(OFF) ± 0.025 ± 0.025 nA typ VD = 4.5/1 V, VS = 1Ⲑ4.5 V;

± 0.1 ±2.5 ± 0.1 ± 2.5 nA max Test Circuit 2

Drain OFF Leakage I

(OFF) ± 0.025 ± 0.025 nA typ VD = 4.5/1 V, VS = 1Ⲑ4.5 V;

± 0.1 ±2.5 ± 0.1 ± 2.5 nA max Test Circuit 2

Channel ON Leakage I

, IS (ON) ± 0.05 ± 0.05 nA typ VD = VS = 4.5 V/1 V;

± 0.2 ±5 ± 0.2 ± 5 nA max Test Circuit 3

DIGITAL INPUTS

Input High Voltage, V

INH

2.4 2.4 V min

Input Low Voltage, V

INL

0.8 0.8 V max

Input Current

INL

or I

INH

0.005 0.005 µA typ VIN = V

INL

or V

INH

± 0.1 ±0.1 µA max

DYNAMIC CHARACTERISTICS

250 250 ns typ RL = 300 Ω, CL = 35 pF;

500 500 ns max V

= 2 V; Test Circuit 4

OFF

50 50 ns typ RL = 300 Ω, CL = 35 pF;

100 100 ns max V

= 2 V; Test Circuit 4

Break-Before-Make Time 200 200 ns typ R

= 300 Ω, CL = 35 pF;

Delay, t

(ADG513 Only) VS1 = VS2 = 2 V; Test Circuit 5

Charge Injection 16 16 pC typ V

= 0 V, RS = 0 Ω, CL = 10 nF;

Test Circuit 6

OFF Isolation 68 68 dB typ R

= 50 Ω, CL = 5 pF, f = 1 MHz;

Test Circuit 7

Channel-to-Channel Crosstalk 85 85 dB typ R

= 50 Ω, CL = 5 pF, f = 1 MHz;

Test Circuit 8

(OFF) 9 9 pF typ f = 1 MHz

CD, CS (ON) 35 35 pF typ f = 1 MHz

POWER REQUIREMENTS

4.5/5.5 4.5/5.5 V min/max

0.0001 0.0001 µA typ VDD = 5.5 V 11µA max Digital Inputs = 0 V or 5 V

NOTES

Temperature ranges are as follows: B Versions –40°C to +85°C; T Version –55°C to +125°C.

Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

(VDD = 5 V  10%, VSS = 0 V, GND = 0 V, unless otherwise noted)

ADG511/ADG512/ADG513

REV. C

–3–

Single Supply

B Version

0C to

Parameter 25C70C Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 V to V

200 Ω typ VD = 1.5 V, IS = –1 mA;

500 Ω max VDD = 3 V

LEAKAGE CURRENTS V

= 3.6 V

Source OFF Leakage I

(OFF) ± 0.025 nA typ VD = 2.6/1 V, VS = 1Ⲑ2.6 V;

± 0.1 ± 2.5 nA max Test Circuit 2

Drain OFF Leakage I

(OFF) ± 0.025 nA typ VD = 2.6/1 V, VS = 1Ⲑ2.6 V;

± 0.1 ± 2.5 nA max Test Circuit 2

Channel ON Leakage I

, IS (ON) ±0.05 nA typ VD = VS = 2.6 V/1 V;

± 0.2 ± 5 nA max Test Circuit 3

DIGITAL INPUTS

Input High Voltage, V

INH

2.4 V min

Input Low Voltage, V

INL

0.8 V max

Input Current

INL

or I

INH

0.005 µA typ VIN = V

INL

or V

INH

± 0.1 µA max

DYNAMIC CHARACTERISTICS

600 ns typ RL = 300 Ω, CL = 35 pF;

1200 ns max V

= 1 V; Test Circuit 4

OFF

100 ns typ RL = 300 Ω, CL = 35 pF;

160 ns max V

= 1 V; Test Circuit 4

Break-Before-Make Time 500 ns typ R

= 300 Ω, CL = 35 pF;

Delay, t

(ADG513 Only) VS1 = VS2 = 1 V; Test Circuit 5

Charge Injection 11 pC typ V

= 0 V, RS = 0 Ω, CL = 10 nF;

Test Circuit 6

OFF Isolation 68 dB typ R

= 50 Ω, CL = 5 pF, f = 1 MHz;

Test Circuit 7

Channel-to-Channel Crosstalk 85 dB typ R

= 50 Ω, CL = 5 pF, f = 1 MHz;

Test Circuit 8

(OFF) 9 pF typ f = 1 MHz

CD, CS (ON) 35 pF typ f = 1 MHz

POWER REQUIREMENTS

3/3.6 V min/max

0.0001 µA typ VDD = 3.6 V 1 µA max Digital Inputs = 0 V or 3 V

NOTES

Temperature range is as follows: B Version –40°C to +85°C.

Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

REV. C

–4–

ADG511/ADG512/ADG513–SPECIFICATIONS

(VDD = 3.3 V  10%, VSS = 0 V, GND = 0 V, unless otherwise noted)

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