Analog Devices ADG512, ADG511, ADG513 Datasheet

LC2MOS

a

FEATURES
+3 V, +5 V or ⴞ5 V Power Supplies
Ultralow Power Dissipation (<0.5 ␮W)
Low Leakage (<100 pA)
Low On Resistance (<50 ⍀)
Fast Switching Times
Low Charge Injection
TTL/CMOS Compatible
16-Lead DIP or SOIC Package

APPLICATIONS
Battery Powered Instruments
Single Supply Systems
Remote Powered Equipment
+5 V Supply Systems
Computer Peripherals such as Disk Drives
Precision Instrumentation
Audio and Video Switching
Automatic Test Equipment
Precision Data Acquisition
Sample Hold Systems
Communication Systems
Compatible with ⴞ5 V Supply DACs and ADCs such as

AD7840/8, AD7870/1/2/4/5/6/8

Precision 5 V/3 V Quad SPST Switches

ADG511/ADG512/ADG513

FUNCTIONAL BLOCK DIAGRAMS

S1

IN1

IN2

ADG511

IN3

IN4

IN1

D1
S2

IN2

D2
S3

D3
S4

D4

SWITCHES SHOWN FOR A LOGIC "1" INPUT

ADG512

IN3

IN4

The ADG511, ADG512 and ADG513 contain four indepen­dent SPST switches. The ADG511 and ADG512 differ only in
that the digital control logic is inverted. The ADG511 switch is
turned on with a logic low on the appropriate control input,
while a logic high is required for the ADG512. The ADG513
contains two switches whose digital control logic is similar to
that of the ADG511 while the logic is inverted in the remaining
two switches.

S1

IN1

D1
S2

IN2

D2
S3

D3
S4

D4

ADG513

IN3

IN4

S1

D1
S2

D2
S3

D3
S4

D4

GENERAL DESCRIPTION

The ADG511, ADG512 and ADG513 are monolithic CMOS
ICs containing four independently selectable analog switches.
These switches feature low, well-controlled on resistance and
wide analog signal range, making them ideal for precision
analog signal switching.

These switch arrays are fabricated using Analog Devices’
advanced linear compatible CMOS (LC

2

MOS) process which
offers the additional benefits of low leakage currents, ultralow
power dissipation and low capacitance for fast switching speeds
with minimum charge injection. These features make the
ADG511, ADG512 and ADG513 the optimum choice for a
wide variety of signal switching tasks in precision analog signal
processing and data acquisition systems.

The ability to operate from single +3 V, +5 V or ±5 V bipolar

supplies make the ADG511, ADG512 and ADG513 perfect for
use in battery-operated instruments, 4–20 mA loop systems and
with the new generation of DACs and ADCs from Analog
Devices. The use of 5 V supplies and reduced operating currents
give much lower power dissipation than devices operating from

±15 V supplies.

PRODUCT HIGHLIGHTS

1. +5 Volt Single Supply Operation
The ADG511/ADG512/ADG513 offers high performance,
including low on resistance and wide signal range, fully

specified and guaranteed with +3 V, ±5 V as well as +5 V

supply rails.

2. Ultralow Power Dissipation
CMOS construction ensures ultralow power dissipation.

3. Low R

ON

4. Break-Before-Make Switching
Switches are guaranteed to have break-before-make opera­tion. This allows multiple outputs to be tied together for
multiplexer applications without the possibility of momentary
shorting between channels.

REV. B

Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone] World Wide Web Site: http://www.analog.com
Fax: [phone] © Analog Devices, Inc., 1999

ADG511/ADG512/ADG513–SPECIFICATIONS

1

Dual Supply

Parameter +25ⴗC+85ⴗC +25ⴗC +125ⴗC Units Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range V
R

ON

LEAKAGE CURRENTS V

Source OFF Leakage I

Drain OFF Leakage I

Channel ON Leakage I

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V
Input Current

or I

I

INL

DYNAMIC CHARACTERISTICS

t

ON

t

OFF

Break-Before-Make Time 100 100 ns typ R
Delay, t
Charge Injection 11 11 pC typ V

OFF Isolation 68 68 dB typ R

Channel-to-Channel Crosstalk 85 85 dB typ R

C
C
CD, CS (ON) 35 35 pF typ f = 1 MHz

POWER REQUIREMENTS

V
V
I

I

NOTES

1

Temperature ranges are as follows: B Versions –40°C to +85°C; T Versions –55°C to +125°C.

2

Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

(ADG513 Only) VS1 = VS2 = +3 V; Test Circuit 5

D

(OFF) 9 9 pF typ f = 1 MHz

S

(OFF) 9 9 pF typ f = 1 MHz

D

DD

SS

DD

SS

(VDD = +5 V ⴞ 10%, VSS = –5 V ⴞ 10%, GND = 0 V, unless otherwise noted)

B Versions T Versions

–40ⴗC to –55ⴗC to

to V

DD

SS

INH

30 30 Ω typ VD = ±3.5 V, I

50 50 Ω max V

(OFF) ±0.025 ±0.025 nA typ VD = ±4.5 V, V

S

±0.1 ±2.5 ±0.1 ±2.5 nA max Test Circuit 2

(OFF) ±0.025 ±0.025 nA typ VD = ±4.5 V, V

D

±0.1 ±2.5 ±0.1 ±2.5 nA max Test Circuit 2

, I

(ON) ±0.05 ±0.05 nA typ V

D

S

±0.2 ±5 ±0.2 ±5 nA max Test Circuit 3

INH

INL

2.4 2.4 V min

0.8 0.8 V max

0.005 0.005 µA typ V
±0.1 ±0.1 µA max

2

200 200 ns typ R

375 375 ns max V

120 120 ns typ R

150 150 ns max V

+4.5/5.5 +4.5/5.5 V min/max
–4.5/–5.5 –4.5/–5.5 V min/max

0.0001 0.0001 µA typ V
11µA max Digital Inputs = 0 V or 5 V

0.0001 0.0001 µA typ
11µA max

VDD to VSSV

= –10 mA;

= +4.5 V, VSS = –4.5 V

DD

= +5.5 V, VSS = –5.5 V

DD

= V

D

= V

IN

= 300 Ω. C

L

= ±3 V; Test Circuit 4

S

= 300 Ω. C

L

= ±3 V; Test Circuit 4

S

= 300 Ω, C

L

= 0 V, R

S

S

= ±4.5 V;

S

or V

INL

L

L

L

= 0 Ω, C

S

= ⫿4.5 V;

S

= ⫿4.5 V;

S

INH

= 35 pF;

= 35 pF;

= 35 pF;

Test Circuit 6

= 50 Ω, C

L

= 5 pF, f = 1 MHz;

L

Test Circuit 7

= 50 Ω, C

L

= 5 pF, f = 1 MHz;

L

Test Circuit 8

= +5.5 V, VSS = –5.5 V

DD

= 10 nF;

L

–2–

REV. B

ADG511/ADG512/ADG513

Single Supply

(VDD = +5 V ⴞ 10%, VSS = 0 V, GND = 0 V, unless otherwise noted)

B Versions T Versions

–40ⴗC to –55ⴗC to

Parameter +25ⴗC+85ⴗC+25ⴗC +125ⴗC Units Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 V to V
R

ON

45 45 Ω typ V

DD

75 75 Ω max V

LEAKAGE CURRENTS V

Source OFF Leakage I

(OFF) ±0.025 ±0.025 nA typ V

S

0 V to VDDV

= +3.5 V, IS = –10 mA;

D

= +4.5 V

DD

= +5.5 V

DD

= 4.5/1 V, VS = 1Ⲑ4.5 V;

D

±0.1 ±2.5 ±0.1 ±2.5 nA max Test Circuit 2

Drain OFF Leakage I

(OFF) ±0.025 ±0.025 nA typ V

D

= 4.5/1 V, VS = 1Ⲑ4.5 V;

D

±0.1 ±2.5 ±0.1 ±2.5 nA max Test Circuit 2

Channel ON Leakage I

(ON) ±0.05 ±0.05 nA typ V

D

S

= VS = +4.5 V/+1 V;

D

, I

±0.2 ±5 ±0.2 ±5 nA max Test Circuit 3

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V

INL

INH

2.4 2.4 V min

0.8 0.8 V max

Input Current

I

INL

or I

INH

0.005 0.005 µA typ V

IN

= V

INL

or V

INH

±0.1 ±0.1 µA max

DYNAMIC CHARACTERISTICS

t

ON

t

OFF

Break-Before-Make Time 200 200 ns typ R
Delay, t

(ADG513 Only) VS1 = VS2 = +2 V; Test Circuit 5

D

Charge Injection 16 16 pC typ V

2

250 250 ns typ R

500 500 ns max V

50 50 ns typ R

100 100 ns max V

= 300 Ω, C

L

= +2 V; Test Circuit 4

S

= 300 Ω, C

L

= +2 V; Test Circuit 4

S

= 300 Ω, C

L

= 0 V, R

S

= 35 pF;

L

= 35 pF;

L

= 35 pF;

L

= 0 Ω, C

S

= 10 nF;

L

Test Circuit 6

OFF Isolation 68 68 dB typ R

= 50 Ω, C

L

= 5 pF, f = 1 MHz;

L

Test Circuit 7

Channel-to-Channel Crosstalk 85 85 dB typ R

= 50 Ω, C

L

= 5 pF, f = 1 MHz;

L

Test Circuit 8

(OFF) 9 9 pF typ f = 1 MHz

C

S

(OFF) 9 9 pF typ f = 1 MHz

C

D

CD, CS (ON) 35 35 pF typ f = 1 MHz

POWER REQUIREMENTS

V

DD

I

DD

0.0001 0.0001 µA typ V

+4.5/5.5 +4.5/5.5 V min/max

= +5.5 V

DD

11µA max Digital Inputs = 0 V or 5 V

NOTES

1

Temperature ranges are as follows: B Versions –40°C to +85°C; T Versions –55°C to +125°C.

2

Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

REV. B

–3–

ADG511/ADG512/ADG513–SPECIFICATIONS

1

Single Supply

Parameter +25ⴗC +70ⴗC Units Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 V to V
R

ON

LEAKAGE CURRENTS V

Source OFF Leakage I

Drain OFF Leakage I

Channel ON Leakage I

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V
Input Current

or I

I

INL

INH

DYNAMIC CHARACTERISTICS

t

ON

t

OFF

Break-Before-Make Time 500 ns typ R
Delay, t
Charge Injection 11 pC typ V

OFF Isolation 68 dB typ R

Channel-to-Channel Crosstalk 85 dB typ R

C
C
CD, CS (ON) 35 pF typ f = 1 MHz

POWER REQUIREMENTS

V

DD

I

DD

NOTES

1

Temperature ranges are as follows: B Versions –40°C to +85°C.

2

Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

(ADG513 Only) VS1 = VS2 = +1 V; Test Circuit 5

D

(OFF) 9 pF typ f = 1 MHz

S

(OFF) 9 pF typ f = 1 MHz

D

(VDD = +3.3 V ⴞ 10%, VSS = 0 V, GND = 0 V, unless otherwise noted)

B Versions

0ⴗC to

DD

V

200 Ω typ V

500 Ω max V

(OFF) ±0.025 nA typ V

S

±0.1 ±2.5 nA max Test Circuit 2

(OFF) ±0.025 nA typ V

D

±0.1 ±2.5 nA max Test Circuit 2

, I

(ON) ±0.05 nA typ V

D

S

±0.2 ±5 nA max Test Circuit 3

INH

INL

2.4 V min

0.8 V max

0.005 µA typ V
±0.1 µA max

2

600 ns typ R

1200 ns max V

100 ns typ R

160 ns max V

3/3.6 V min/max

0.0001 µA typ V
1 µA max Digital Inputs = 0 V or 3 V

= +1.5 V, IS = –1 mA;

D

= +3 V

DD

= +3.6 V

DD

= 2.6/1 V, VS = 1Ⲑ2.6 V;

D

= 2.6/1 V, VS = 1Ⲑ2.6 V;

D

= VS = +2.6 V/+1 V;

D

= V

INL

or V

INH

= 35 pF;

L

= 35 pF;

L

= 35 pF;

L

= 0 Ω, C

S

IN

= 300 Ω, C

L

= +1 V; Test Circuit 4

S

= 300 Ω, C

L

= +1 V; Test Circuit 4

S

= 300 Ω, C

L

= 0 V, R

S

Test Circuit 6

= 50 Ω, C

L

= 5 pF, f = 1 MHz;

L

Test Circuit 7

= 50 Ω, C

L

= 5 pF, f = 1 MHz;

L

Test Circuit 8

= +3.6 V

DD

= 10 nF;

L

–4–

REV. B