Analog Devices ADG453BR, ADG453BN, ADG452BR, ADG452BN, ADG451BR Datasheet

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LC2MOS
a
FEATURES Low On Resistance (4 V) On Resistance Flatness 0.2 V 44 V Supply Maximum Ratings 615 V Analog Signal Range Fully Specified @ 65 V, +12 V, 615 V Ultralow Power Dissipation (18 mW) ESD 2 kV Continuous Current 100 mA Fast Switching Times
70 ns
t
O
N
60 ns
t
OFF
TTL/CMOS Compatible Pin Compatible Upgrade for ADG411/ADG412/ADG413
and ADG431/ADG432/ADG433
APPLICATIONS Relay Replacement Audio and Video Switching Automatic Test Equipment Precision Data Acquisition Battery Powered Systems Sample Hold Systems Communication Systems PBX, PABX Systems Avionics
5 V RON SPST Switches
ADG451/ADG452/ADG453
FUNCTIONAL BLOCK DIAGRAMS
IN1
IN2
ADG451
IN3
IN4
SWITCHES SHOWN FOR A LOGIC "1" INPUT
S1
D1 S2
D2 S3
D3 S4
D4
IN1
IN2
ADG453
IN3
IN4
IN1
IN2
ADG452
IN3
IN4
S1
D1 S2
D2 S3
D3 S4
D4
S1
D1 S2
D2 S3
D3 S4
D4
GENERAL DESCRIPTION
The ADG451, ADG452 and ADG453 are monolithic CMOS devices comprising four independently selectable switches. They are designed on an enhanced LC
2
MOS process that provides low power dissipation yet gives high switching speed and low on resistance.
The on resistance profile is very flat over the full analog input range ensuring excellent linearity and low distortion when switching audio signals. Fast switching speed coupled with high signal bandwidth also make the parts suitable for video signal switching. CMOS construction ensures ultralow power dissipa­tion making the parts ideally suited for portable and battery powered instruments.
The ADG451, ADG452 and ADG453 contain four indepen­dent single-pole/single-throw (SPST) switches. The ADG451 and ADG452 differ only in that the digital control logic is in­verted. The ADG451 switches are turned on with a logic low on the appropriate control input, while a logic high is required for the ADG452. The ADG453 has two switches with digital con­trol logic similar to that of the ADG451 while the logic is in­verted on the other two switches.
Each switch conducts equally well in both directions when ON and has an input signal range which extends to the supplies. In the OFF condition, signal levels up to the supplies are blocked.
REV. A
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
The ADG453 exhibits break-before-make switching action for use in multiplexer applications. Inherent in the design is low charge injection for minimum transients when switching the digital inputs.

PRODUCT HIGHLIGHTS

1. Low RON (5 max)
2. Ultralow Power Dissipation
3. Extended Signal Range The ADG451, ADG452 and ADG453 are fabricated on an enhanced LC
2
MOS process giving an increased signal
range that fully extends to the supply rails.
4. Break-Before-Make Switching This prevents channel shorting when the switches are configured as a multiplexer. (ADG453 only.)
5. Single Supply Operation For applications where the analog signal is unipolar, the ADG451, ADG452 and ADG453 can be operated from a single rail power supply. The parts are fully specified with a single +12 V power supply and will remain functional with single supplies as low as +5.0 V.
6. Dual Supply Operation For applications where the analog signal is bipolar, the ADG451, ADG452 and ADG453 can be operated from a dual power supply ranging from ±4.5 V to ±20 V.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 World Wide Web Site: http://www.analog.com Fax: 781/326-8703 © Analog Devices, Inc., 1998
ADG451/ADG452/ADG453–SPECIFICATIONS
1

Dual Supply

(VDD = +15 V, VSS = –15 V, VL = +5 V, GND = 0 V. All specifications T
MIN
to T
unless otherwise noted.)
MAX
B Version
T
to
Parameter +258CT
MIN MAX
Units Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range VSS to V On-Resistance (R
) 4.0 typ VD = –10 V to +10 V, IS = –10 mA
ON
DD
V
57 max
On-Resistance Match Between 0.1 typ V
Channels (R
On-Resistance Flatness (R
) 0.5 0.5 max
ON
FLAT(ON)
) 0.2 typ VD = –5 V, 0 V, +5 V, IS = –10 mA
= ±10 V, IS = –10 mA
D
0.5 0.5 max
LEAKAGE CURRENTS
2
Source OFF Leakage IS (OFF) ±0.02 nA typ VD = ±10 V, VS = ±10 V;
±0.5 ±2.5 nA max Test Circuit 2
Drain OFF Leakage I
(OFF) ±0.02 nA typ VD = ±10 V, VS = ±10 V;
D
±0.5 ±2.5 nA max Test Circuit 2
Channel ON Leakage I
, IS (ON) ±0.04 nA typ VD = VS = ±10 V;
D
±1 ±5 nA max Test Circuit 3
DIGITAL INPUTS
Input High Voltage, V Input Low Voltage, V
INL
INH
2.4 V min
0.8 V max
Input Current
I
INL
or I
INH
0.005 µA typ VIN = V
INL
or V
, All Others = 2.4 V
INH
±0.5 µA max or 0.8 V Respectively
DYNAMIC CHARACTERISTICS
t
ON
t
OFF
Break-Before-Make Time Delay, t
(ADG453 Only) 5 5 ns min V
3
70 ns typ RL = 300 , CL = 35 pF; 180 220 ns max V
= ±10 V; Test Circuit 4
S
60 ns typ RL = 300 , CL = 35 pF; 140 180 ns max V
D
15 ns typ RL = 300 , CL = 35 pF;
= ±10 V; Test Circuit 4
S
= VS2 = +10 V;
S1
Test Circuit 5
Charge Injection 20 pC typ V
= 0 V, RS = 0 , CL = 1.0 nF;
S
30 pC max Test Circuit 6
OFF Isolation 65 dB typ R
= 50 , CL = 5 pF, f = 1 MHz;
L
Test Circuit 7
Channel-to-Channel Crosstalk –90 dB typ R
= 50 , CL = 5 pF, f = 1 MHz;
L
Test Circuit 8
C
(OFF) 15 pF typ f = 1 MHz
S
C
(OFF) 15 pF typ f = 1 MHz
D
CD, CS (ON) 100 pF typ f = 1 MHz
POWER REQUIREMENTS V
I
DD
0.0001 µA typ
0.5 5 µA max
I
SS
0.0001 µA typ
0.5 5 µA max
I
L
I
GND
3
0.0001 µA typ
0.5 5 µA max
0.0001 µA typ
0.5 5 µA max
NOTES
1
Temperature range is as follows: B Version: –40°C to +85° C.
2
T
MAX
3
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
= +70°C
.
–2–
= +16.5 V, VSS = –16.5 V
DD
Digital Inputs = 0 V or 5 V
REV. A
ADG451/ADG452/ADG453

Single Supply

(VDD = +12 V, VSS = 0 V, VL = +5 V, GND = 0 V. All specifications T
MIN
to T
unless otherwise noted.)
MAX
B Version
T
to
Parameter +258CT
MIN MAX
Units Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to V On-Resistance (R
)6 typ VD = 0 V to 10 V, IS = –10 mA
ON
DD
V
810 max
On-Resistance Match Between 0.1 typ V
Channels (R
On-Resistance Flatness (R
LEAKAGE CURRENTS
) 0.5 0.5 max
ON
FLAT(ON)
2, 3
) 1.0 1.0 typ VD = 0 V, +5 V, IS = –10 mA
= 10 V, IS = –10 mA
D
Source OFF Leakage IS (OFF) ±0.02 nA typ VD = 0 V, 10 V, VS = 0 V, 10 V;
±0.5 ±2.5 nA max Test Circuit 2
Drain OFF Leakage I
(OFF) ±0.02 nA typ VD = 0 V, 10 V, VS = 0 V, 10 V;
D
±0.5 ±2.5 nA max Test Circuit 2
Channel ON Leakage I
, IS (ON) ±0.04 nA typ VD = VS = 0 V, 10 V;
D
±1 ±5 nA max Test Circuit 3
DIGITAL INPUTS
Input High Voltage, V Input Low Voltage, V
INL
INH
2.4 V min
0.8 V max
Input Current
I
INL
or I
INH
0.005 µA typ VIN = V
INL
or V
INH
±0.5 µA max
DYNAMIC CHARACTERISTICS
t
ON
t
OFF
Break-Before-Make Time Delay, t
(ADG453 Only) 10 10 ns min V
4
100 ns typ RL = 300 , CL = 35 pF; 220 260 ns max V
= +8 V; Test Circuit 4
S
80 ns typ RL = 300 , CL = 35 pF; 160 200 ns max V 15 ns typ RL = 300 , CL = 35 pF;
D
= +8 V; Test Circuit 4
S
= VS2 = +8 V;
S1
Test Circuit 5
Charge Injection 10 pC typ V
= 0 V, RS = 0 , CL = 1.0 nF;
S
Test Circuit 6
Channel-to-Channel Crosstalk –90 dB typ R
= 50 , CL = 5 pF, f = 1 MHz;
L
Test Circuit 8
C
(OFF) 15 pF typ f = 1 MHz
S
C
(OFF) 15 pF typ f = 1 MHz
D
CD, CS (ON) 100 pF typ f = 1 MHz
POWER REQUIREMENTS VDD = +13.2 V
Digital Inputs = 0 V or 5 V
I
DD
0.0001 µA typ
0.5 5 µA max
I
L
I
GND
4
0.0001 µA typ
0.5 5 µA max V
0.0001 µA typ
= +5.5 V
L
0.5 5 µA max VL = +5.5 V
NOTES
1
Temperature range is as follows: B Version: –40 °C to +85°C.
2
T
= +70°C.
MAX
3
Tested with dual supplies.
4
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
REV. A
–3–
ADG451/ADG452/ADG453–SPECIFICATIONS
1
Dual Supply
(VDD = +5 V, VSS = –5 V, VL = +5 V, GND = 0 V. All specifications T
MIN
to T
unless otherwise noted.)
MAX
B Version
T
to
Parameter +258CT
MIN MAX
Units Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range VSS to V On-Resistance (R
)7 typ VD = –3.5 V to +3.5 V, IS = –10 mA
ON
DD
V
12 15 max
On-Resistance Match Between 0.3 typ V
= 3.5 V, IS = –10 mA
D
Channels (RON) 0.5 0.5 max
LEAKAGE CURRENTS
2, 3
Source OFF Leakage IS (OFF) ±0.02 nA typ VD = ±4.5, VS = ±4.5;
±0.5 ±2.5 nA max Test Circuit 2
Drain OFF Leakage I
(OFF) ±0.02 nA typ VD = 0 V, 5 V, VS = 0 V, 5 V;
D
±0.5 ±2.5 nA max Test Circuit 2
Channel ON Leakage I
, IS (ON) ±0.04 nA typ VD = VS = 0 V, 5 V;
D
±1 ±5 nA max Test Circuit 3
DIGITAL INPUTS
Input High Voltage, V Input Low Voltage, V
INL
INH
2.4 V min
0.8 V max
Input Current
I
INL
or I
INH
0.005 µA typ VIN = V
INL
or V
INH
±0.5 µA max
DYNAMIC CHARACTERISTICS
t
ON
t
OFF
Break-Before-Make Time Delay, t
(ADG453 Only) 5 5 ns min V
4
160 ns typ RL = 300 , CL = 35 pF; 220 300 ns max V
= 3 V; Test Circuit 4
S
60 ns typ RL = 300 , CL = 35 pF; 140 180 ns max V 50 ns typ RL = 300 , CL = 35 pF;
D
= 3 V; Test Circuit 4
S
= VS2 = 3 V;
S1
Test Circuit 5
Charge Injection 10 pC typ V
= 0 V, RS = 0 , CL = 1.0 nF;
S
Test Circuit 6
OFF Isolation 65 dB typ R
= 50 , CL = 5 pF, f = 1 MHz;
L
Test Circuit 7
Channel-to-Channel Crosstalk –76 dB typ R
= 50 , CL = 5 pF, f = 1 MHz;
L
Test Circuit 8
C
(OFF) 15 pF typ f = 1 MHz
S
C
(OFF) 15 pF typ f = 1 MHz
D
CD, CS (ON) 100 pF typ f = 1 MHz
POWER REQUIREMENTS VDD = +5.5 V
Digital Inputs = 0 V or 5 V
I
DD
0.0001 µA typ
0.5 5 µA max
I
SS
0.0001 µA typ
0.5 5 µA max
I
L
I
GND
4
0.0001 µA typ
0.5 5 µA max V
0.0001 µA typ
= +5.5 V
L
0.5 5 µA max VL = +5.5 V
NOTES
1
Temperature range is as follows: B Version: –40°C to +85° C.
2
T
= +70°C.
MAX
3
Tested with dual supplies.
4
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
–4–
REV. A
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