Low on resistance (4 Ω)
On resistance flatness (0.2 Ω)
44 V supply maximum ratings
±15 V analog signal range
Fully specified at ±5 V, +12 V, ±15 V
Ultralow power dissipation (18 µW)
ESD 2 kV
Continuous current (100 mA)
Fast switching times
70 ns
t
ON
t
60 ns
OFF
TTL/CMOS-compatible
Pin-compatible upgrade for ADG411/ADG412/ADG413
and ADG431/ADG432/ADG433
APPLICATIONS
Relay replacement
Audio and video switching
Automatic test equipment
Precision data acquisition
Battery-powered systems
Sample-and-hold systems
Communication systems
PBX, PABX systems
Avionics
GENERAL DESCRIPTION
The ADG451/ADG452/ADG453 are monolithic CMOS
devices comprising four independently selectable switches.
They are designed on an enhanced LC
provides low power dissipation yet gives high switching
speed and low on resistance.
The on resistance profile is very flat over the full analog input
range, ensuring excellent linearity and low distortion when
switching audio signals. Fast switching speed, coupled with high
signal bandwidth, makes the parts suitable for video signal
switching. CMOS construction ensures ultralow power
dissipation, making the parts ideally suited for portable and
battery-powered instruments.
The ADG451/ADG452/ADG453 contain four independent
single-pole/single-throw (SPST) switches. The ADG451 and
2
MOS process that
5 Ω R
SPST Switches
ON
ADG451/ADG452/ADG453
FUNCTIONAL BLOCK DIAGRAMS
S1
IN1
IN2
ADG451
IN3
IN4
IN1
IN2
IN3
IN4
SWITCHES SHOWN FOR A LOGIC 1 INPUT
IN1
D1
S2
IN2
D2
S3
IN3
D3
S4
IN4
D4
ADG453
Figure 1.
ADG452
S1
D1
S2
D2
S3
D3
S4
D4
ADG452 differ only in that the digital control logic is inverted.
The ADG451 switches are turned on with a logic low on the
appropriate control input, while a logic high is required for the
ADG452. The ADG453 has two switches with digital control
logic similar to that of the ADG451, while the logic is inverted
on the other two switches.
Each switch conducts equally well in both directions when on,
and has an input signal range that extends to the supplies. In the
off condition, signal levels up to the supplies are blocked.
The ADG453 exhibits break-before-make switching action for
use in multiplexer applications. Inherent in the design is low
charge injection for minimum transients when switching the
digital inputs.
S1
D1
S2
D2
S3
D3
S4
D4
05239-001
Rev. B
Information furnished by Analog Devices is believed to be accurate and reliable.
However, no responsibility is assumed by Analog Devices for its use, nor for any
infringements of patents or other rights of third parties that may result from its use.
Specifications subject to change without notice. No license is granted by implication
or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
3. Extended Signal Range
The ADG451/ADG452/ADG453 are fabricated on an
enhanced LC
that fully extends to the supply rails.
4. Break-Before-Make Switching
This prevents channel shorting when the switches are
configured as a multiplexer (ADG453 only.)
2
MOS process, giving an increased signal range
5. Single-Supply Operation
For applications in which the analog signal is unipolar, the
ADG451/ADG452/ADG453 can be operated from a single
rail power supply. The parts are fully specified with a single
12 V power supply and remain functional with single supplies
as low as 5.0 V.
6. Dual-Supply Operation
For applications where the analog signal is bipolar, the
ADG451/ADG452/ADG453 can be operated from a dual
power supply ranging from ±4.5 V to ±20 V.
Rev. B | Page 3 of 20
ADG451/ADG452/ADG453
SPECIFICATIONS
DUAL SUPPLY
VDD = +15 V, VSS = −15 V, VL = +5 V, GND = 0 V. All specifications T
Table 1.
MIN
1
to T
MAX
B Version
Parameter 25°C T
ANALOG SWITCH
Analog Signal Range VSS to V
DD
On Resistance (RON) 4 Ω typ VD = −10 V to +10 V, IS = −10 mA
5 7 Ω max
On Resistance Match Between
Channels (∆R
)
ON
0.1 Ω typ V
0.5 0.5 Ω max
On Resistance Flatness (R
) 0.2 Ω typ VD = −5 V, 0 V, +5 V, IS = −10 mA
FLAT(ON)
0.5 0.5 Ω max
LEAKAGE CURRENTS
2
Source Off Leakage, IS (Off) ±0.02 nA typ VD = ±10 V, VS = ±10 V; Figure 15
±0.5 ±2.5 nA max
Drain Off Leakage, ID (Off) ±0.02 nA typ VD = ±10 V, VS = ±10 V; Figure 15
±0.5 ±2.5 nA max
Channel On Leakage, ID, IS (On) ±0.04 nA typ VD = VS = ±10 V; Figure 16
±1 ±5 nA max
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
Input Current, I
or I
INL
INH
INL
INH
2.4 V min
0.8 V max
0.005 µA typ VIN = V
±0.5 µA max
DYNAMIC CHARACTERISTICS
t
ON
3
70 ns typ RL = 300 Ω, CL = 35 pF, VS = ±10 V; Figure 17
180 220 ns max
t
OFF
60 ns typ RL = 300 Ω, CL = 35 pF, VS = ±10 V; Figure 17
140 180 ns max
Break-Before-Make Time Delay, tD
15 ns typ R
(ADG453 Only)
5 5 ns min
Charge Injection 20 pC typ VS = 0 V, RS = 0 Ω, CL = 1.0 nF; Figure 19
30 pC max
Off Isolation 65 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; Figure 20
Channel-to-Channel Crosstalk −90 dB typ
CS (Off) 37 pF typ f = 1 MHz
CD (Off) 37 pF typ f = 1 MHz
CD, CS (On) 140 pF typ f = 1 MHz
POWER REQUIREMENTS VDD = +16.5 V, VSS = −16.5 V; digital inputs = 0 V or 5 V
I
DD
0.0001 µA typ
0.5 5 µA max
MIN
to T
, unless otherwise noted.
MAX
Unit Test Conditions/Comments
V
= ±10 V, IS = −10 mA
D
or V
INL
= 300 Ω, CL = 35 pF, VS1 = VS2 = +10 V; Figure 18
L
R
= 50 Ω, CL = 5 pF, f = 1 MHz; Figure 21
L
; all others = 2.4 V or 0.8 V, respectively
INH
Rev. B | Page 4 of 20
ADG451/ADG452/ADG453
B Version
Parameter 25°C T
I
SS
0.0001 µA typ
MIN
1
to T
Unit Test Conditions/Comments
MAX
0.5 5 µA max
I
L
0.0001 µA typ
0.5 5 µA max
3
I
0.0001 µA typ
GND
0.5 5 µA max
1
Temperature range for B Version is −40°C to +85°C.
2
T
= 70°C.
MAX
3
Guaranteed by design, not subject to production test.
= 12 V, VSS = 0 V, VL = 5 V, GND = 0 V. All specifications T
V
DD
MIN
to T
, unless otherwise noted.
MAX
Table 2.
MIN
1
to T
MAX
Unit Test Conditions/Comments
B Version
Parameter 25°C T
ANALOG SWITCH
Analog Signal Range 0 V to V
DD
V
On Resistance (RON) 6 Ω typ VD = 0 V to +10 V, IS = −10 mA
8 10 Ω max
On Resistance Match Between
Channels (∆R
)
ON
0.1 Ω typ V
= +10 V, IS = −10 mA
D
0.5 0.5 Ω max
On Resistance Flatness (R
LEAKAGE CURRENTS
2, 3
) 1.0 1.0 Ω typ VD = 0 V, +5 V, IS = −10 mA
FLAT(ON)
Source Off Leakage, IS (Off) ±0.02 nA typ VD = 0 V, 10 V, VS = 0 V, 10 V; Figure 15
±0.5 ±2.5 nA max
Drain Off Leakage, ID (Off) ±0.02 nA typ VD = 0 V, 10 V, VS = 0 V, 10 V; Figure 15
±0.5 ±2.5 nA max
Channel On Leakage, ID, IS (On) ±0.04 nA typ VD = VS = 0 V, 10 V; Figure 16
±1 ±5 nA max
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
Input Current, I
or I
INL
INH
INL
INH
2.4 V min
0.8 V max
0.005 µA typ VIN = V
INL
or V
INH
±0.5 µA max
DYNAMIC CHARACTERISTICS
t
ON
4
100 ns typ RL = 300 Ω, CL = 35 pF, VS = 8 V; Figure 17
220 260 ns max
t
OFF
80 ns typ RL = 300 Ω, CL = 35 pF, VS = 8 V; Figure 17
160 200 ns max
Break-Before-Make Time Delay, tD
15 ns typ R
= 300 Ω, CL = 35 pF, VS1 = VS2 = 8 V; Figure 18
L
(ADG453 Only)
10 10 ns min
Charge Injection 10 pC typ VS = 6 V, RS = 0 Ω, CL = 1.0 nF; Figure 19
Channel-to-Channel Crosstalk −90 dB typ
R
= 50 Ω, CL = 5 pF, f = 1 MHz; Figure 21
L
CS (Off) 60 pF typ f = 1 MHz
CD (Off) 60 pF typ f = 1 MHz
CD, CS (On) 100 pF typ f = 1 MHz
Rev. B | Page 5 of 20
ADG451/ADG452/ADG453
B Version
Parameter 25°C T
MIN
1
to T
MAX
Unit Test Conditions/Comments
POWER REQUIREMENTS VDD = 13.2 V; digital inputs = 0 V or 5 V
I
DD
0.0001 µA typ
0.5 5 µA max
I
L
0.0001 µA typ
0.5 5 µA max VL = 5.5 V
4
I
0.0001 µA typ
GND
0.5 5 µA max VL = 5.5 V
1
Temperature range for B Version is −40°C to +85°C.
2
T
= 70°C.
MAX
3
Tested with dual supplies.
4
Guaranteed by design, not subject to production test.
= +5 V, VSS = −5 V, VL = +5 V, GND = 0 V. All specifications T
V
DD
MIN
to T
, unless other wis e noted.
MAX
Table 3.
MIN
1
to T
MAX
Unit Test Conditions/Comments
B Version
Parameter 25°C T
ANALOG SWITCH
Analog Signal Range VSS to V
DD
V
On Resistance (RON) 7 Ω typ VD = −3.5 V to +3.5 V, IS = −10 mA
12 15 Ω max
On Resistance Match Between
Channels (∆R
)
ON
0.3 Ω typ V
= 3.5 V, IS = −10 mA
D
0.5 0.5 Ω max
LEAKAGE CURRENTS
2, 3
Source Off Leakage, IS (Off) ±0.02 nA typ VD = ±4.5, VS = ±4.5; Figure 15
±0.5 ±2.5 nA max
Drain Off Leakage, ID (Off) ±0.02 nA typ VD = 0 V, 5 V, VS = 0 V, 5 V; Figure 15
±0.5 ±2.5 nA max
Channel On Leakage, ID, IS (On) ±0.04 nA typ VD = VS = 0 V, 5 V; Figure 16
±1 ±5 nA max
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
Input Current, I
or I
INL
INH
INL
INH
2.4 V min
0.8 V max
0.005 µA typ VIN = V
INL
or V
INH
±0.5 µA max
DYNAMIC CHARACTERISTICS
t
ON
4
160 ns typ RL = 300 Ω, CL = 35 pF, VS = 3 V; Figure 17
220 300 ns max
t
OFF
60 ns typ RL = 300 Ω, CL = 35 pF, VS = 3 V; Figure 17
140 180 ns max
Break-Before-Make Time Delay, tD
50 ns typ R
= 300 Ω, CL = 35 pF, VS1 = VS2 = 3 V; Figure 18
L
(ADG453 Only)
5 5 ns min
Charge Injection 10 pC typ VS = 0 V, RS = 0 Ω, CL = 1.0 nF; Figure 19
Off Isolation 65 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; Figure 20
Channel-to-Channel Crosstalk −76 dB typ
R
= 50 Ω, CL = 5 pF, f = 1 MHz; Figure 21
L
CS (Off) 48 pF typ f = 1 MHz
CD (Off) 48 pF typ f = 1 MHz
CD, CS (On) 148 pF typ f = 1 MHz
Rev. B | Page 6 of 20
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