Analog Devices ADG451 2 3 b Datasheet

LC2MOS

FEATURES

Low on resistance (4 Ω) On resistance flatness (0.2 Ω) 44 V supply maximum ratings ±15 V analog signal range Fully specified at ±5 V, +12 V, ±15 V Ultralow power dissipation (18 µW) ESD 2 kV Continuous current (100 mA) Fast switching times
70 ns
t
ON
t
60 ns
OFF
TTL/CMOS-compatible Pin-compatible upgrade for ADG411/ADG412/ADG413
and ADG431/ADG432/ADG433

APPLICATIONS

Relay replacement Audio and video switching Automatic test equipment Precision data acquisition Battery-powered systems Sample-and-hold systems Communication systems PBX, PABX systems Avionics

GENERAL DESCRIPTION

The ADG451/ADG452/ADG453 are monolithic CMOS devices comprising four independently selectable switches. They are designed on an enhanced LC provides low power dissipation yet gives high switching speed and low on resistance.
The on resistance profile is very flat over the full analog input range, ensuring excellent linearity and low distortion when switching audio signals. Fast switching speed, coupled with high signal bandwidth, makes the parts suitable for video signal switching. CMOS construction ensures ultralow power dissipation, making the parts ideally suited for portable and battery-powered instruments.
The ADG451/ADG452/ADG453 contain four independent single-pole/single-throw (SPST) switches. The ADG451 and
2
MOS process that
5 Ω R
SPST Switches
ON

FUNCTIONAL BLOCK DIAGRAMS

S1
IN1
IN2
ADG451
IN3
IN4
IN1
IN2
IN3
IN4
SWITCHES SHOWN FOR A LOGIC 1 INPUT
IN1
D1 S2
IN2
D2 S3
IN3
D3 S4
IN4
D4
ADG453
Figure 1.
ADG452
S1
D1 S2
D2 S3
D3 S4
D4
ADG452 differ only in that the digital control logic is inverted. The ADG451 switches are turned on with a logic low on the appropriate control input, while a logic high is required for the ADG452. The ADG453 has two switches with digital control logic similar to that of the ADG451, while the logic is inverted on the other two switches.
Each switch conducts equally well in both directions when on, and has an input signal range that extends to the supplies. In the off condition, signal levels up to the supplies are blocked.
The ADG453 exhibits break-before-make switching action for use in multiplexer applications. Inherent in the design is low charge injection for minimum transients when switching the digital inputs.
S1
D1 S2
D2 S3
D3 S4
D4
05239-001
Rev. B
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.
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www.analog.com
ADG451/ADG452/ADG453
TABLE OF CONTENTS
Product Highlights ........................................................................... 3
Te r m in o l o g y .................................................................................... 10
Specifications..................................................................................... 4
Dual Supply ................................................................................... 4
Absolute Maximum Ratings............................................................ 8
ESD Caution.................................................................................. 8
Pin Configuration and Function Descriptions............................. 9
REVISION HISTORY
12/04—Rev. A to Rev. B
Updated Format ..................................................................Universal
Changes to Specifications Section.................................................. 3
Changes to Absolute Maximum Ratings Section ......................... 8
Changes to Pin Configuration and Function
Descriptions Section ........................................................................ 9
Updated Outline Dimensions....................................................... 16
Changes to Ordering Guide.......................................................... 17
2/98—Rev. 0 to Rev. A
10/97—Revision 0: Initial Version
Typical Perfor m a n c e Charac t e r ist i c s ........................................... 11
Applications..................................................................................... 13
Tes t Ci rc ui ts ..................................................................................... 14
Outline Dimensions....................................................................... 16
Ordering Guide .......................................................................... 17
Rev. B | Page 2 of 20
ADG451/ADG452/ADG453

PRODUCT HIGHLIGHTS

1. Low RON (5 Ω maximum)
2. Ultralow Power Dissipation
3. Extended Signal Range The ADG451/ADG452/ADG453 are fabricated on an enhanced LC that fully extends to the supply rails.
4. Break-Before-Make Switching This prevents channel shorting when the switches are configured as a multiplexer (ADG453 only.)
2
MOS process, giving an increased signal range
5. Single-Supply Operation For applications in which the analog signal is unipolar, the ADG451/ADG452/ADG453 can be operated from a single rail power supply. The parts are fully specified with a single 12 V power supply and remain functional with single supplies as low as 5.0 V.
6. Dual-Supply Operation For applications where the analog signal is bipolar, the ADG451/ADG452/ADG453 can be operated from a dual power supply ranging from ±4.5 V to ±20 V.
Rev. B | Page 3 of 20
ADG451/ADG452/ADG453

SPECIFICATIONS

DUAL SUPPLY

VDD = +15 V, VSS = −15 V, VL = +5 V, GND = 0 V. All specifications T
Table 1.
MIN
1
to T
MAX
B Version Parameter 25°C T
ANALOG SWITCH
Analog Signal Range VSS to V
DD
On Resistance (RON) 4 typ VD = −10 V to +10 V, IS = −10 mA 5 7 max On Resistance Match Between
Channels (∆R
)
ON
0.1 typ V
0.5 0.5 max On Resistance Flatness (R
) 0.2 typ VD = −5 V, 0 V, +5 V, IS = −10 mA
FLAT(ON)
0.5 0.5 max LEAKAGE CURRENTS
2
Source Off Leakage, IS (Off) ±0.02 nA typ VD = ±10 V, VS = ±10 V; Figure 15 ±0.5 ±2.5 nA max Drain Off Leakage, ID (Off) ±0.02 nA typ VD = ±10 V, VS = ±10 V; Figure 15 ±0.5 ±2.5 nA max
Channel On Leakage, ID, IS (On) ±0.04 nA typ VD = VS = ±10 V; Figure 16 ±1 ±5 nA max DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
Input Current, I
or I
INL
INH
INL
INH
2.4 V min
0.8 V max
0.005 µA typ VIN = V ±0.5 µA max DYNAMIC CHARACTERISTICS
t
ON
3
70 ns typ RL = 300 Ω, CL = 35 pF, VS = ±10 V; Figure 17 180 220 ns max t
OFF
60 ns typ RL = 300 Ω, CL = 35 pF, VS = ±10 V; Figure 17 140 180 ns max Break-Before-Make Time Delay, tD
15 ns typ R
(ADG453 Only) 5 5 ns min Charge Injection 20 pC typ VS = 0 V, RS = 0 Ω, CL = 1.0 nF; Figure 19 30 pC max Off Isolation 65 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; Figure 20 Channel-to-Channel Crosstalk −90 dB typ CS (Off) 37 pF typ f = 1 MHz CD (Off) 37 pF typ f = 1 MHz CD, CS (On) 140 pF typ f = 1 MHz
POWER REQUIREMENTS VDD = +16.5 V, VSS = −16.5 V; digital inputs = 0 V or 5 V
I
DD
0.0001 µA typ
0.5 5 µA max
MIN
to T
, unless otherwise noted.
MAX
Unit Test Conditions/Comments
V
= ±10 V, IS = −10 mA
D
or V
INL
= 300 Ω, CL = 35 pF, VS1 = VS2 = +10 V; Figure 18
L
R
= 50 Ω, CL = 5 pF, f = 1 MHz; Figure 21
L
; all others = 2.4 V or 0.8 V, respectively
INH
Rev. B | Page 4 of 20
ADG451/ADG452/ADG453
B Version
Parameter 25°C T
I
SS
0.0001 µA typ
MIN
1
to T
Unit Test Conditions/Comments
MAX
0.5 5 µA max I
L
0.0001 µA typ
0.5 5 µA max
3
I
0.0001 µA typ
GND
0.5 5 µA max
1
Temperature range for B Version is −40°C to +85°C.
2
T
= 70°C.
MAX
3
Guaranteed by design, not subject to production test.
= 12 V, VSS = 0 V, VL = 5 V, GND = 0 V. All specifications T
V
DD
MIN
to T
, unless otherwise noted.
MAX
Table 2.
MIN
1
to T
MAX
Unit Test Conditions/Comments
B Version
Parameter 25°C T
ANALOG SWITCH
Analog Signal Range 0 V to V
DD
V On Resistance (RON) 6 typ VD = 0 V to +10 V, IS = −10 mA 8 10 max On Resistance Match Between
Channels (∆R
)
ON
0.1 typ V
= +10 V, IS = −10 mA
D
0.5 0.5 max
On Resistance Flatness (R
LEAKAGE CURRENTS
2, 3
) 1.0 1.0 typ VD = 0 V, +5 V, IS = −10 mA
FLAT(ON)
Source Off Leakage, IS (Off) ±0.02 nA typ VD = 0 V, 10 V, VS = 0 V, 10 V; Figure 15 ±0.5 ±2.5 nA max Drain Off Leakage, ID (Off) ±0.02 nA typ VD = 0 V, 10 V, VS = 0 V, 10 V; Figure 15 ±0.5 ±2.5 nA max Channel On Leakage, ID, IS (On) ±0.04 nA typ VD = VS = 0 V, 10 V; Figure 16 ±1 ±5 nA max
DIGITAL INPUTS
Input High Voltage, V Input Low Voltage, V Input Current, I
or I
INL
INH
INL
INH
2.4 V min
0.8 V max
0.005 µA typ VIN = V
INL
or V
INH
±0.5 µA max
DYNAMIC CHARACTERISTICS
t
ON
4
100 ns typ RL = 300 Ω, CL = 35 pF, VS = 8 V; Figure 17 220 260 ns max t
OFF
80 ns typ RL = 300 Ω, CL = 35 pF, VS = 8 V; Figure 17 160 200 ns max Break-Before-Make Time Delay, tD
15 ns typ R
= 300 Ω, CL = 35 pF, VS1 = VS2 = 8 V; Figure 18
L
(ADG453 Only)
10 10 ns min Charge Injection 10 pC typ VS = 6 V, RS = 0 Ω, CL = 1.0 nF; Figure 19 Channel-to-Channel Crosstalk −90 dB typ
R
= 50 Ω, CL = 5 pF, f = 1 MHz; Figure 21
L
CS (Off) 60 pF typ f = 1 MHz CD (Off) 60 pF typ f = 1 MHz CD, CS (On) 100 pF typ f = 1 MHz
Rev. B | Page 5 of 20
ADG451/ADG452/ADG453
B Version Parameter 25°C T
MIN
1
to T
MAX
Unit Test Conditions/Comments
POWER REQUIREMENTS VDD = 13.2 V; digital inputs = 0 V or 5 V
I
DD
0.0001 µA typ
0.5 5 µA max I
L
0.0001 µA typ
0.5 5 µA max VL = 5.5 V
4
I
0.0001 µA typ
GND
0.5 5 µA max VL = 5.5 V
1
Temperature range for B Version is −40°C to +85°C.
2
T
= 70°C.
MAX
3
Tested with dual supplies.
4
Guaranteed by design, not subject to production test.
= +5 V, VSS = −5 V, VL = +5 V, GND = 0 V. All specifications T
V
DD
MIN
to T
, unless other wis e noted.
MAX
Table 3.
MIN
1
to T
MAX
Unit Test Conditions/Comments
B Version Parameter 25°C T
ANALOG SWITCH
Analog Signal Range VSS to V
DD
V On Resistance (RON) 7 typ VD = −3.5 V to +3.5 V, IS = −10 mA 12 15 max On Resistance Match Between
Channels (∆R
)
ON
0.3 typ V
= 3.5 V, IS = −10 mA
D
0.5 0.5 max
LEAKAGE CURRENTS
2, 3
Source Off Leakage, IS (Off) ±0.02 nA typ VD = ±4.5, VS = ±4.5; Figure 15 ±0.5 ±2.5 nA max Drain Off Leakage, ID (Off) ±0.02 nA typ VD = 0 V, 5 V, VS = 0 V, 5 V; Figure 15 ±0.5 ±2.5 nA max Channel On Leakage, ID, IS (On) ±0.04 nA typ VD = VS = 0 V, 5 V; Figure 16 ±1 ±5 nA max
DIGITAL INPUTS
Input High Voltage, V Input Low Voltage, V Input Current, I
or I
INL
INH
INL
INH
2.4 V min
0.8 V max
0.005 µA typ VIN = V
INL
or V
INH
±0.5 µA max
DYNAMIC CHARACTERISTICS
t
ON
4
160 ns typ RL = 300 Ω, CL = 35 pF, VS = 3 V; Figure 17 220 300 ns max t
OFF
60 ns typ RL = 300 Ω, CL = 35 pF, VS = 3 V; Figure 17 140 180 ns max Break-Before-Make Time Delay, tD
50 ns typ R
= 300 Ω, CL = 35 pF, VS1 = VS2 = 3 V; Figure 18
L
(ADG453 Only)
5 5 ns min Charge Injection 10 pC typ VS = 0 V, RS = 0 Ω, CL = 1.0 nF; Figure 19 Off Isolation 65 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; Figure 20 Channel-to-Channel Crosstalk −76 dB typ
R
= 50 Ω, CL = 5 pF, f = 1 MHz; Figure 21
L
CS (Off) 48 pF typ f = 1 MHz CD (Off) 48 pF typ f = 1 MHz CD, CS (On) 148 pF typ f = 1 MHz
Rev. B | Page 6 of 20
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