ANALOG DEVICES ADG451 Service Manual

S
www.BDTIC.com/ADI
LC2MOS

FEATURES

Low on resistance (4 Ω) On resistance flatness (0.2 Ω) 44 V supply maximum ratings ±15 V analog signal range Fully specified at ±5 V, 12 V, ±15 V Ultralow power dissipation (18 μW) ESD 2 kV Continuous current (100 mA) Fast switching times
70 ns
t
ON
60 ns
t
OFF
TTL-/CMOS-compatible Pin-compatible upgrade for ADG411/ADG412/ADG413
and ADG431/ADG432/ADG433

APPLICATIONS

Relay replacement Audio and video switching Automatic test equipment Precision data acquisition Battery-powered systems Sample-and-hold systems Communication systems PBX, PABX systems Avio nics

GENERAL DESCRIPTION

The ADG451/ADG452/ADG453 are monolithic CMOS devices comprising four independently selectable switches. They are designed on an enhanced LC provides low power dissipation yet gives high switching speed and low on resistance.
The on resistance profile is very flat over the full analog input r
ange, ensuring excellent linearity and low distortion when switching audio signals. Fast switching speed, coupled with high signal bandwidth, makes the parts suitable for video signal switching. CMOS construction ensures ultralow power dissipa­tion, making the parts ideally suited for portable and battery­powered instruments.
The ADG451/ADG452/ADG453 contain four independent,
gle-pole/single-throw (SPST) switches. The ADG451 and
sin ADG452 differ only in that the digital control logic is inverted. The ADG451 switches are turned on with a logic low on the appropriate control input, while a logic high is required for the ADG452.
Rev. C
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Anal og Devices for its use, nor for any infringements of patents or ot her rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.
2
MOS process that
5 Ω RON SPST Switches

FUNCTIONAL BLOCK DIAGRAMS

IN1
IN2
ADG451
IN3
IN4
WITCHES SHOWN FOR A LOGIC 1 INPUT.
Figure 1. ADG451
IN1
IN2
ADG452
IN3
IN4
SWITCHES SHOWN FOR A LOGIC 1 INPUT.
Figure 2. ADG452
IN1
IN2
ADG453
IN3
IN4
SWITCHES SHOWN FOR A LOGIC 1 INPUT.
Figure 3. ADG453
The ADG453 has two switches with digital control logic similar to that of the ADG451, while the logic is inverted on the other two switches.
Each switch conducts equally well in both and each has an input signal range that extends to the supplies. In the off condition, signal levels up to the supplies are blocked.
The ADG453 exhibits break-before-make switching action for us
e in multiplexer applications. Inherent in the design is low charge injection for minimum transients when switching the digital inputs.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 www.analog.com Fax: 781.461.3113 ©2006 Analog Devices, Inc. All rights reserved.
S1
D1 S2
D2 S3
D3 S4
D4
05239-001
S1
D1 S2
D2 S3
D3 S4
D4
05239-101
S1
D1 S2
D2 S3
D3 S4
D4
05239-102
directions when on,
ADG451/ADG452/ADG453
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TABLE OF CONTENTS

Features.............................................................................................. 1
Absolute Maximum Ratings ............................................................7
Applications....................................................................................... 1
General Description ......................................................................... 1
Functional Block Diagrams............................................................. 1
Revision History ............................................................................... 2
Product Highlights ........................................................................... 3
Specifications..................................................................................... 4
15 V Dual Supply.......................................................................... 4
12 V Single Supply........................................................................ 5
5 V Dual Supply............................................................................ 6

REVISION HISTORY

10/06—Rev. B to Rev. C
Changes to Table 4............................................................................ 9
Changes to Ordering Guide.......................................................... 18
12/04—Rev. A to Rev. B
pdated Format..................................................................Universal
U
Changes to Specifications Section.................................................. 3
Changes to Absolute Maximum Ratings Section......................... 8
Changes to Pin Configuration and Function
Descriptions Section ........................................................................ 9
Updated Outline Dimensions....................................................... 16
Changes to Ordering Guide.......................................................... 17
ESD Caution...................................................................................7
Pin Configuration and Function Descriptions..............................8
Typical Performance Characteristics..............................................9
Terminology.................................................................................... 11
Applications..................................................................................... 12
Test Circuits..................................................................................... 13
Outline Dimensions....................................................................... 15
Ordering Guide .......................................................................... 16
2/98—Rev. 0 to Rev. A
10/97—Revision 0: Initial Version
Rev. C | Page 2 of 16
ADG451/ADG452/ADG453
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PRODUCT HIGHLIGHTS

1. Low RON (5 Ω maximum).
2. Ultralow Power Dissipation.
3. Extended Signal Range. e ADG451/ADG452/ADG453 are fabricated on an enhanced
Th
2
LC
MOS process, giving an increased signal range that fully
extends to the supply rails.
4. Break-Before-Make Switching.
revents channel shorting when the switches are
This p configured as a multiplexer (ADG453 only.)
5. Single-Supply Operation. F
or applications in which the analog signal is unipolar, the ADG451/ADG452/ADG453 can be operated from a single rail power supply. The parts are fully specified with a single 12 V power supply and remain functional with single supplies as low as 5.0 V.
6. Dual-Supply Operation. or applications where the analog signal is bipolar, the
F ADG451/ADG452/ADG453 can be operated from a dual power supply ranging from ±4.5 V to ±20 V.
Rev. C | Page 3 of 16
ADG451/ADG452/ADG453
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SPECIFICATIONS

15 V DUAL SUPPLY

VDD = 15 V, VSS = −15 V, VL = 5 V, GND = 0 V. All specifications T
Table 1.
B Version Parameter 25°C T
ANALOG SWITCH
Analog Signal Range VSS to VDD V On Resistance (RON) 4 Ω typ VD = −10 V to +10 V, IS = −10 mA 5 7 Ω max
On Resistance Match Between Channels (ΔRON) 0.1 Ω typ VD = ±10 V, IS = −10 mA
0.5 0.5 Ω max On Resistance Flatness (R
) 0.2 Ω typ VD = −5 V, 0 V, +5 V, IS = −10 mA
FLAT(ON)
0.5 0.5 Ω max LEAKAGE CURRENTS
2
Source Off Leakage, IS (OFF) ±0.02 nA typ VD = ±10 V, VS = ±10 V; see Figure 17 ±0.5 ±2.5 nA max Drain Off Leakage, ID (OFF) ±0.02 nA typ VD = ±10 V, VS = ±10 V; see Figure 17 ±0.5 ±2.5 nA max
Channel On Leakage, ID, IS (ON) ±0.04 nA typ VD = VS = ±10 V; see Figure 18 ±1 ±5 nA max DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
Input Current, I
INL
2.4 V min
INH
0.8 V max
INL
or I
0.005 μA typ VIN = V
INH
±0.5 μA max DYNAMIC CHARACTERISTICS
3
tON 70 ns typ RL = 300 Ω, CL = 35 pF, VS = ±10 V; see Figure 19
180 220 ns max
t
60 ns typ RL = 300 Ω, CL = 35 pF, VS = ±10 V; see Figure 19
OFF
140 180 ns max
Break-Before-Make Time Delay, tD (ADG453 Only) 15 ns typ RL = 300 Ω, CL = 35 pF, VS1 = VS2 = +10 V; see Figure 20
5 5 ns min
Charge Injection 20 pC typ VS = 0 V, RS = 0 Ω, CL = 1.0 nF; see Figure 21
30 pC max
Off Isolation 65 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 22
Channel-to-Channel Crosstalk −90 dB typ
CS (OFF) 37 pF typ f = 1 MHz
CD (OFF) 37 pF typ f = 1 MHz
CD, CS (ON) 140 pF typ f = 1 MHz POWER REQUIREMENTS VDD = 16.5 V, VSS = −16.5 V; digital inputs = 0 V or 5 V
IDD 0.0001 μA typ
0.5 5 μA max
ISS 0.0001 μA typ
0.5 5 μA max
IL 0.0001 μA typ
0.5 5 μA max
3
I
GND
0.0001 μA typ
0.5 5 μA max
1
Temperature range for B version is −40°C to +85°C.
2
T
= 70°C.
MAX
3
Guaranteed by design, not subject to production test.
MIN
1
to T
MIN
to T
MAX
, unless otherwise noted.
MAX
Unit Test Conditions/Comments
or V
INL
R
= 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 23
L
; all others = 2.4 V or 0.8 V, respectively
INH
Rev. C | Page 4 of 16
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12 V SINGLE SUPPLY

VDD = 12 V, VSS = 0 V, VL = 5 V, GND = 0 V. All specifications T
Table 2.
B Version Parameter 25°C T
ANALOG SWITCH
Analog Signal Range 0 V to VDD V On Resistance (RON) 6 Ω typ VD = 0 V to +10 V, IS = −10 mA 8 10 Ω max On Resistance Match Between Channels (ΔRON) 0.1 Ω typ VD = 10 V, IS = −10 mA
0.5 0.5 Ω max On Resistance Flatness (R
LEAKAGE CURRENTS
2, 3
) 1.0 1.0 Ω typ VD = 0 V, 5 V, IS = −10 mA
FLAT(ON)
Source Off Leakage, IS (OFF) ±0.02 nA typ VD = 0 V, 10 V, VS = 0 V, 10 V; see Figure 17 ±0.5 ±2.5 nA max Drain Off Leakage, ID (OFF) ±0.02 nA typ VD = 0 V, 10 V, VS = 0 V, 10 V; see Figure 17 ±0.5 ±2.5 nA max Channel On Leakage, ID, IS (ON) ±0.04 nA typ VD = VS = 0 V, 10 V; see Figure 18 ±1 ±5 nA max
DIGITAL INPUTS
Input High Voltage, V Input Low Voltage, V Input Current, I
INL
2.4 V min
INH
0.8 V max
INL
or I
0.005 μA typ VIN = V
INH
±0.5 μA max
DYNAMIC CHARACTERISTICS
4
tON 100 ns typ RL = 300 Ω, CL = 35 pF, VS = 8 V; see Figure 19 220 260 ns max t
80 ns typ RL = 300 Ω, CL = 35 pF, VS = 8 V; see Figure 19
OFF
160 200 ns max Break-Before-Make Time Delay, tD (ADG453 Only) 15 ns typ
10 10 ns min
Charge Injection 10 pC typ VS = 6 V, RS = 0 Ω, CL = 1.0 nF; see Figure 21 Channel-to-Channel Crosstalk −90 dB typ CS (OFF) 60 pF typ f = 1 MHz CD (OFF) 60 pF typ f = 1 MHz CD, CS (ON) 100 pF typ f = 1 MHz
POWER REQUIREMENTS VDD = 13.2 V; digital inputs = 0 V or 5 V
IDD 0.0001 μA typ
0.5 5 μA max IL 0.0001 μA typ
0.5 5 μA max VL = 5.5 V
4
I
GND
0.0001 μA typ
0.5 5 μA max VL = 5.5 V
1
Temperature range for B version is −40°C to +85°C.
2
T
= 70°C.
MAX
3
Tested with dual supplies.
4
Guaranteed by design, not subject to production test.
MIN
to T
MIN
, unless otherwise noted.
MAX
1
to T
Unit Test Conditions/Comments
MAX
or V
INH
INL
= 300 Ω, CL = 35 pF, VS1 = VS2 = 8 V;
R
L
see Figure 20
R
= 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 23
L
Rev. C | Page 5 of 16
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