Low on resistance (<70 Ω)
Low ∆RON (9 Ω max)
Low R
Low power dissipation
Fast switching times
Low leakage currents (3 nA max)
Low charge injection (6 pC max)
Break-before-make switching action
Latch-up proof A grade
Plug-in upgrade for DG201A/ADG201A, DG202A/ADG202A,
Plug-in replacement for DG441/DG442/DG444
APPLICATIONS
Audio and video switching
Automatic test equipment
Precision data acquisition
Battery-powered systems
Sample-and-hold systems
Communication systems
GENERAL DESCRIPTION
The ADG441, ADG442, and ADG444 are monolithic CMOS
devices that comprise of four independently selectable switches.
They are designed on an enhanced LC
provides low power dissipation yet gives high switching speed
and low on resistance.
The on resistance profile is very flat over the full analog input
range, which ensures good linearity and low distortion when
switching audio signals. High switching speed also makes the
parts suitable for video signal switching. CMOS construction
ensures ultralow power dissipation, making the parts ideally
suited for portable and battery-powered instruments. The
ADG441, ADG442, and ADG444 contain four independent
SPST switches. Each switch of the ADG441 and ADG444 turns
on when a logic low is applied to the appropriate control input.
The ADG442 switches are turned on with logic high on the
appropriate control input. The ADG441 and ADG444 switches
match (3 Ω max)
ON
< 110 ns
t
ON
t
< 60 ns
OFF
DG211/ADG211A
2
MOS process that
ADG441/ADG442/ADG444
FUNCTIONAL BLOCK DIAGRAM
S1
IN1
IN2
ADG441
ADG444
IN3
IN4
SWITCHES SHOWN FOR A LOGIC 1 INPUT
IN1
D1
S2
IN2
D2
S3
IN3
D3
S4
IN4
D4
Figure 1.
ADG442
differ in that the ADG444 requires a 5 V logic power supply
that is applied to the V
have a V
pin, the logic power supply is generated internally by
L
pin. The ADG441 and ADG442 do not
L
an on-chip voltage generator.
Each switch conducts equally well in both directions when ON
and has an input signal range that extends to the power
supplies. In the OFF condition, signal levels up to the supplies
are blocked. All switches exhibit break-before-make switching
action for use in multiplexer applications. Inherent in the
design is the low charge injection for minimum transients when
switching the digital inputs.
PRODUCT HIGHLIGHTS
1. Extended signal range. The ADG441A/ADG442A/
ADG444A are fabricated on an enhanced LC
isolated process, giving an increased signal range that
extends to the supply rails.
2. Low power dissipation.
3. Low R
4. Trench isolation guards against latch-up for A grade parts. A
dielectric trench separates the P and N channel transistors
thereby preventing latch-up even under severe overvoltage
conditions.
5. Break-before-make switching. This prevents channel
shorting when the switches are configured as a multiplexer.
6. Single-supply operation. For applications where the analog
signal is unipolar, the ADG441/ADG442/ADG444 can be
operated from a single-rail power supply. The parts are fully
specified with a single 12 V power supply.
ON
.
S1
D1
S2
D2
S3
D3
S4
D4
2
MOS, trench-
05233-001
Rev. A
Information furnished by Analog Devices is believed to be accurate and reliable.
However, no responsibility is assumed by Analog Devices for its use, nor for any
infringements of patents or other rights of third parties that may result from its use.
Specifications subject to change without notice. No license is granted by implication
or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
VDD = +15 V ± 10%, VSS = −15 V ± 10%, VL = +5 V ± 10% (ADG444), GND = 0 V, unless otherwise noted.
Table 1.
B Version
Parameter +25°C −40°C to +85°C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range VSS to VDD V
RON 40 Ω typ VD = ±8.5 V, IS = −10 mA
70 85 Ω max VDD = +13.5 V, VSS = −13.5 V
∆RON 4 Ω typ −8.5 V ≤ VD ≤ +8.5 V
9 Ω max
RON Match 1 Ω typ VD = 0 V, IS = −10 mA
3 Ω max
LEAKAGE CURRENTS VDD = +16.5 V, VSS = −16.5 V
Source OFF Leakage IS (OFF) ±0.01 nA typ
±0.5 ±3 nA max See Figure 15
Drain OFF Leakage ID (OFF) ±0.01 nA typ
±0.5 ±3 nA max See Figure 15
Channel ON Leakage ID, IS (ON) ±0.08 nA typ VS = VD = ±15.5 V
±0.5 ±3 nA max See Figure 16
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
Input Current
I
or I
INL
±0.5 µA max
DYNAMIC CHARACTERISTICS
tON 85 ns typ RL = 1 kΩ, CL = 35 pF;
110 170 ns max VS = ±10 V; see Figure 17
t
45 ns typ RL = 1 kΩ, CL = 35 pF;
OFF
60 80 ns max VS = ±10 V; see Figure 17
t
30 ns typ RL = 1 kΩ, CL = 35 pF;
OPEN
Charge Injection 1 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF;
6 pC max VDD = +15 V, VSS = –15 V; see Figure 18
OFF Isolation 60 dB typ RL = 50 Ω, CL = 5 pF; f = 1 MHz; see Figure 19
Channel-to-Channel Crosstalk 100 dB typ RL = 50 Ω, CL = 5 pF; f= 1 MHz; see Figure 20
CS (OFF) 4 pF typ f = 1 MHz
CD (OFF) 4 pF typ f = 1 MHz
CD, CS (ON) 16 pF typ f = 1 MHz
POWER REQUIREMENTS VDD = +16.5 V, VSS = −16.5 V
I
DD
ADG441/ADG442 80 µA max
ADG444 0.001 µA typ
1 2.5 µA max
ISS 0.0001 µA typ 1 2.5 µA max
IL (ADG444 Only) 0.001 µA typ VL = 5.5 V
1 2.5 µA max
1
Temperature range is: B Version: −40°C to +85°C.
2
Guaranteed by design, not subject to production test.
Parameter +25°C −40°C to +85°C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 to VDD V
RON 70 Ω typ VD = +3 V, +8 V, IS = −5 mA
110 130 Ω max VDD = 10.8 V
∆RON 4 Ω typ 3 V ≤ VD ≤ 8 V
9 Ω max
RON Match 1 Ω typ VD = +6 V, IS = −5 mA
3 Ω max
LEAKAGE CURRENT VDD = 13.2 V
Source OFF Leakage IS (OFF) ±0.01 nA typ VD = 12.2 V/1 V, VS = 1 V/12.2 V
±0.5 ±3 nA max See Figure 15
Drain OFF Leakage ID (OFF) ±0.01 nA typ VD = 12.2 V/1 V, VS = 1 V/12.2 V
±0.5 ±3 nA max See Figure 15
Channel ON Leakage ID, IS (ON) ±0.08 nA typ VS = VD = 12.2 V/1 V
±0.5 ±3 nA max Figure 16
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
2.4 V min
INH
0.8 V max
INL
Input Current
I
or I
±0.00001 µA typ VIN = V
INL
INH
INL
or V
INH
±0.5 µA max
DYNAMIC CHARACTERISTICS
2
tON 105 ns typ RL = 1 kΩ, CL = 35 pF
150 220 ns max VS = 8 V; Figure 17
t
40 ns typ RL = 1 kΩ, CL = 35 pF
OFF
60 100 ns max VS = 8 V; Figure 17
t
50 ns typ RL = 1 kΩ, CL = 35 pF
OPEN
Charge Injection 2 pC typ VS = 6 V, RS = 0 Ω, CL = 1 nF
6 pC max VDD = 12 V, VSS = 0 V; see Figure 18
OFF Isolation 60 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 19
Channel-to-Channel Crosstalk 100 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 20
CS (OFF) 7 pF typ f = 1 MHz
CD (OFF) 10 pF typ f = 1 MHz
CD, CS (ON) 16 pF typ f = 1 MHz
POWER REQUIREMENTS VDD = 13.2 V
IDD Digital Inputs = 0 V or 5 V
ADG441/ADG442 80 µA max
ADG444 0.001 µA typ
1 2.5 µA max
IL (ADG444 Only) 0.001 µA typ VL = 5.5 V
1 2.5 µA max
1
Temperature range is: B Version: −40°C to +85°C.
2
Guaranteed by design, not subject to production test.
Rev. A | Page 4 of 16
ADG441/ADG442/ADG444
www.BDTIC.com/ADI
ABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise noted.
Table 3.
Parameter Rating
VDD to V
SS
VDD to GND −0.3 V to +25 V
VSS to GND +0.3 V to −25 V
VL to GND −0.3 V to VDD + 0.3 V
Analog, Digital Inputs VSS − 2 V to VDD + 2 V or 30 mA, Whichever Occurs First
Continuous Current, S or D 30 mA
Peak Current, S or D (Pulsed at 1 ms, 10% Duty Cycle Max) 100 mA
Operating Temperature Range
Industrial (B Version) −40°C to +85°C
Storage Temperature Range −65°C to +150°C
Junction Temperature 150°C
Lead Temperature, Soldering (10 sec) 300°C
Plastic Package, Power Dissipation 470 mW
θJA, Thermal Impedance 177°C/W
Lead Temperature, Soldering (10 sec) 260°C
SOIC Package, Power Dissipation 600 mW
θJA, Thermal Impedance 77°C/W
Lead Temperature, Soldering
Vapor Phase (60 sec) 215°C
Infrared (15 sec) 220°C
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only;
functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Only one absolute maximum
rating may be applied at any one time.
44 V
Table 4. Truth Table
ADG441/ADG444 IN ADG442 IN Switch Condition
0 1 ON
1 0 OFF
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate
on the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
Rev. A | Page 5 of 16
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