Analog Devices ADG436BR, ADG436BN Datasheet

a

Dual SPDT Switch

ADG436

FEATURES
44 V Supply Maximum Ratings
V

to VDD Analog Signal Range

SS

Low On Resistance (12 ⍀ Typ)
Low ⌬R
Low R
Low Power Dissipation
Fast Switching Times

t

t
Low Leakage Currents (5 nA Max)
Low Charge Injection (10 pC)
Break-Before-Make Switching Action

APPLICATIONS
Audio and Video Switching
Battery Powered Systems
Test Equipment
Communications Systems

GENERAL DESCRIPTION

(3 ⍀ Max)

ON

Match (2.5 ⍀ Max)

ON

< 175 ns

ON

< 145 ns

OFF

The ADG436 is a monolithic CMOS device comprising two
independently selectable SPDT switches. It is designed on an

2

MOS process which provides low power dissipation yet

LC
gives high switching speed and low on resistance.

The on resistance profile is very flat over the full analog input
range ensuring good linearity and low distortion when switching
audio signals. High switching speed also makes the part suitable
for video signal switching. CMOS construction ensures ultralow
power dissipation making the part ideally suited for portable and
battery powered instruments.

Each switch conducts equally well in both directions when ON
and has an input signal range which extends to the power sup­plies. In the OFF condition, signal levels up to the supplies are
blocked. All switches exhibit break-before-make switching ac­tion for use in multiplexer applications. Inherent in the design is
low charge injection for minimum transients when switching the
digital inputs.

FUNCTIONAL BLOCK DIAGRAM

S1A

D1

S1B

IN1

ADG436

PRODUCT HIGHLIGHTS

1. Extended Signal Range
The ADG436 is fabricated on an enhanced LC

S2A

D2

S2B

IN2

2

MOS pro­cess, giving an increased signal range which extends to the
supply rails.

2. Low Power Dissipation

3. Low R

ON

4. Single Supply Operation
For applications where the analog signal is unipolar, the
ADG436 can be operated from a single rail power supply.

REV. A

Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone] World Wide Web Site: http://www.analog.com
Fax: [phone] © Analog Devices, Inc., 1998

ADG436–SPECIFICATIONS

1

Dual Supply

(VDD = +15 V, VSS = –15 V, GND = 0 V, unless otherwise noted)

–40ⴗC to Test Conditions/

Parameter +25ⴗC +85ⴗC Units Comments

ANALOG SWITCH

Analog Signal Range V
R

ON

12 Ω typ VD = ±10 V, I

SS

to V

DD

V

25 Ω max

∆R

ON

1 Ω typ V

= –5 V, 5 V, IS = –10 mA

D

3 Ω max

Match 1 Ω typ VD = ±10 V, I

R

ON

2.5 Ω max

LEAKAGE CURRENTS V

Source OFF Leakage I

(OFF) ±0.005 nA typ VD = ±15.5 V, VS = ±15.5 V

S

= +16.5 V, VSS = –16.5 V

DD

±0.25 ±5 nA max Test Circuit 2

Channel ON Leakage I

(ON) ±0.05 nA typ V

D

S

S

= V

= ±15.5 V

D

, I

±0.4 ±5 nA max Test Circuit 3

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V

INL

INH

2.4 V min

0.8 V max

Input Current

I

INL

or I

INH

±0.005 µA typ V

= 0 V or V

IN

±0.5 µA max

OPEN

2

70 ns typ R

125 ns max V

60 ns typ R

120 ns max V

10 ns min R

= 300 Ω, C

L

= ±10 V; Test Circuit 4

S

= 300 Ω, C

L

= ±10 V; Test Circuit 4

S

= 300 Ω, C

L

= +5 V; Test Circuit 5

V

S

= 0 V, R

D

DYNAMIC CHARACTERISTICS

t

ON

t

OFF

Break-Before-Make Delay, t

Charge Injection 10 pC typ V

Test Circuit 6

OFF Isolation 72 dB typ R

Channel-to-Channel Crosstalk 90 dB typ R

(OFF) 10 pF typ

C

S

= 75 Ω, C

L

= 2.3 V rms, Test Circuit 7

V

S

= 75 Ω, C

L

= 2.3 V rms, Test Circuit 8

V

S

CD, CS (ON) 30 pF typ

POWER REQUIREMENTS

I

DD

0.05 mA typ Digital Inputs = 0 V or 5 V

0.35 mA max

I

SS

0.01 µA typ
15 µA max

VDD/V

SS

NOTES

1

Temperature range is as follows: B Version, –40°C to +85°C.

2

Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

±3/±20 V min/V max |V

| = |VSS|

DD

= –1 mA

S

= –10 mA

S

DD

= 35 pF;

L

= 35 pF;

L

= 35 pF;

L

= 0 Ω, C

D

= 5 pF, f = 1 MHz;

L

= 5 pF, f = 1 MHz;

L

= 10 nF;

L

REV. A–2–

ADG436

Single Supply

(VDD = +12 V, VSS = 0 V, GND = 0 V, unless otherwise noted)

–40ⴗC to Test Conditions/

Parameter +25ⴗC +85ⴗC Units Comments

ANALOG SWITCH

Analog Signal Range 0 to V
R

ON

20 Ω typ V

DD

V

= +1 V, +10 V, IS = –1 mA

D

40 Ω max

R

Match 2.5 Ω max

ON

LEAKAGE CURRENTS V

Source OFF Leakage I

(OFF) ±0.005 nA typ V

S

= +13.2 V

DD

= 12.2 V/1 V, VS = 1 V/12.2 V

D

±0.25 ±5 nA max Test Circuit 2

Channel ON Leakage I

(ON) ±0.05 nA typ V

D

S

= VD = 12.2 V/1 V

S

, I

±4 ±5 nA max Test Circuit 3

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V

INL

INH

2.4 V min

0.8 V max

Input Current

I

INL

or I

INH

±0.005 µA typ V

= 0 V or V

IN

±0.5 µA max

OPEN

2

100 ns typ R

200 ns max V

90 ns typ R

180 ns max V

10 ns typ R

= 300 Ω, C

L

= +8 V; Test Circuit 4

S

= 300 Ω, C

L

= +8 V; Test Circuit 4

S

= 300 Ω, C

L

= +5 V; Test Circuit 5

V

S

= 6 V, R

D

DYNAMIC CHARACTERISTICS

t

ON

t

OFF

Break-Before-Make Delay, t

Charge Injection 10 pC typ V

Test Circuit 6

OFF Isolation 72 dB typ R

Channel-to-Channel Crosstalk 90 dB typ R

(OFF) 10 pF typ

C

S

= 75 Ω, C

L

= 1.15 V rms; Test Circuit 7

V

S

= 75 Ω, C

L

= 1.15 V rms, Test Circuit 8

V

S

CD, CS (ON) 30 pF typ

POWER REQUIREMENTS V

I

DD

0.05 mA typ Digital Inputs = 0 V or 5 V

= +13.5 V

DD

0.35 mA max

V

DD

NOTES

1

Temperature range is as follows: B Version, – 40°C to +85°C.

2

Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

+3/+30 V min/V max

DD

= 35 pF;

L

= 35 pF;

L

= 35 pF;

L

= 0 Ω, C

D

= 5 pF, f = 1 MHz;

L

= 5 pF, f = 1 MHz;

L

= 10 nF;

L

REV. A

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