Analog Devices ADG436 b Datasheet

S1A

S

FEATURES

44 V supply maximum ratings

to VDD analog signal range

V

SS

Low on resistance (12 Ω typ)
Low ∆R
Low R
Low power dissipation
Fast switching times

Low leakage currents (5 nA max)
Low charge injection (10 pC)
Break-before-make switching action

APPLICATIONS

Audio and video switching
Battery-powered systems
Test equipment
Communications systems

GENERAL DESCRIPTION

The ADG436 is a monolithic CMOS device comprising two
independently selectable SPDT switches. It is designed on an
LC
gives high switching speed and low on resistance.

The on resistance profile is very flat over the full analog input
range, ensuring good linearity and low distortion when
switching audio signals. High switching speed also makes the
part suitable for video signal switching. CMOS construction
ensures ultralow power dissipation, making the part ideally
suited for portable and battery-powered instruments.

(3 Ω max)

ON

match (2.5 Ω max)

ON

< 175 ns

t

ON

t

< 145 ns

OFF

2

MOS process, which provides low power dissipation yet

Dual SPDT Switch

ADG436

FUNCTIONAL BLOCK DIAGRAM

ADG436

D1
1B S2B

IN1 IN2

Figure 1.

PRODUCT HIGHLIGHTS

1. Extended signal range.

The ADG436 is fabricated on an enhanced LC
process, giving an increased signal range that extends to
the supply rails.

2. Low power dissipation.

3. Low R

4. Single-supply operation.

For applications where the analog signal is unipolar, the
ADG436 can be operated from a single rail power supply.

ON

.

S2A
D2

00030-001

2

MOS

Each switch conducts equally well in both directions when on
and has an input signal range which extends to the power
supplies. In the off condition, signal levels up to the supplies
are blocked. All switches exhibit break-before-make switching
action for use in multiplexer applications. Inherent in the
design is low charge injection for minimum transients when
switching the digital inputs.

Rev. B

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Fax: [phone] © 2005 Analog Devices, Inc. All rights reserved.

www.analog.com

ADG436

TABLE OF CONTENTS

Specifications..................................................................................... 3

Typical Perfor m a n c e C haracter i s t ic s ..............................................8

Dual Supply ................................................................................... 3

Single Supply ................................................................................. 4

Absolute Maximum Ratings............................................................ 5

ESD Caution.................................................................................. 5

Pin Configuration and Function Descriptions............................. 6

Te r mi n ol o g y ...................................................................................... 7

REVISION HISTORY

3/05—Rev. A to Rev. B

Updated Format..................................................................Universal

Changes to Specifications Tables.................................................... 3

Changes to Figure 11........................................................................ 8

Updated Outline Dimensions....................................................... 12

Changes to Ordering Guide.......................................................... 12

11/98—Rev. 0 to Rev. A

1/96—Revision 0: Initial Version

Test C ir c uit s ..................................................................................... 10

Applications Information.............................................................. 11

ADG436 Supply Voltages.......................................................... 11

Power-Supply Sequencing......................................................... 11

Outline Dimensions ....................................................................... 12

Ordering Guide .......................................................................... 12

Rev. B | Page 2 of 12

ADG436

SPECIFICATIONS

DUAL SUPPLY

VDD = +15 V, VSS = −15 V, GND = 0 V, unless otherwise noted.

Table 1.

Parameter +25°C −40°C to +85°C Unit Test Conditions/ Comments

ANALOG SWITCH

Analog Signal Range VSS to V
R

ON

25 Ω max
∆R

ON

3 Ω max
RONMatch 1 Ω typ VD = ±10 V, IS = −10 mA

2.5 Ω max

LEAKAGE CURRENTS VDD = 16.5 V, VSS = −16.5 V

Source OFF Leakage IS (OFF) ±0.005 nA typ VD = ±15.5 V, VS = ±15.5 V
±0.25 ±5 nA max Figure 13

Channel ON Leakage ID, IS (ON) ±0.05 nA typ VS = VD = ±15.5 V
±0.4 ±5 nA max Figure 14
DIGITAL INPUTS

Input High Voltage, V

Input Low Voltage, V

Input Current, I

DYNAMIC CHARACTERISTICS

t

ON

125 ns max VS =±10 V; Figure 15

t

OFF

120 ns max VS = ±10 V; Figure 15

Break-Before-Make Delay, t

V

Charge Injection 10 pC typ VD = 0 V, RD = 0 Ω, CL = 10 nF;

Figure 17

OFF Isolation 72 dB typ RL = 75 Ω , CL = 5 pF, f = 1 MHz;

V

Channel-to-Channel Crosstalk 90 dB typ RL = 75 Ω, CL = 5 pF, f = 1 MHz;

V

CS (OFF) 13 pF typ

CD, CS (ON) 49 pF typ
POWER REQUIREMENTS

I

DD

0.35 mA max

I

SS

1 5 µA max

VDD/V

SS

1

Temperature range is as follows: B version, −40°C to +85°C.

2

Guaranteed by design; not subject to production test.

1

DD

V

12 Ω typ VD = ±10 V, IS = −1 mA

1 Ω typ VD = −5 V, 5 V, IS = −10 mA

INH

INL

or I

INL

INH

2

2.4 V min

0.8 V max
±0.005 µA typ VIN = 0 V or V
±0.5 µA max

DD

70 ns typ RL = 300 Ω , CL = 35 pF;

60 ns typ RL = 300 Ω , CL = 35 pF;

OPEN

10 ns min RL = 300 Ω , CL = 35 pF;

= +5 V; Figure 16

S

= 2.3 V rms, Figure 18

S

= 2.3 V rms, Figure 19

S

0.05 mA typ Digital inputs = 0 V or 5 V

0.01 µA typ

±3/±20 V min/V max |VDD| = |VSS|

Rev. B | Page 3 of 12

ADG436

SINGLE SUPPLY

VDD = 12 V, VSS = 0 V, GND = 0 V, unless otherwise noted.

Table 2.

Parameter +25°C −40°C to +85°C Unit Test Conditions/ Comments

ANALOG SWITCH

Analog Signal Range 0 to V
R

ON

40 Ω max
RONMatch 2.5 Ω max

LEAKAGE CURRENTS VDD = 13.2 V

Source OFF Leakage IS (OFF) ±0.005 nA typ VD = 12.2 V/1 V, VS = 1 V/12.2 V
±0.25 ±5 nA max Figure 13
Channel ON Leakage ID, IS (ON) ±0.05 nA typ VS = VD = 12.2 V/1 V
±4 ±5 nA max Figure 14

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V

Input Current, I

±0.5 µA max

DYNAMIC CHARACTERISTICS

t

ON

200 ns max VS = 8 V; Figure 15
t

OFF

180 ns max VS = 8 V; Figure 15
Break-Before-Make Delay, t
V
Charge Injection 10 pC typ VD = 6 V, RD = 0 Ω , CL = 10 nF; Figure 17
OFF Isolation 72 dB typ RL = 75 Ω , CL = 5 pF, f = 1 MHz;
V
Channel-to-Channel Crosstalk 90 dB typ RL = 75 Ω , CL = 5 pF, f = 1 MHz;
V
CS (OFF) 22 pF typ
CD, CS (ON) 46 pF typ

POWER REQUIREMENTS VDD = 13.5 V

I

DD

0.35 mA max
V

DD

1

Temperature range is as follows: B version, −40°C to +85°C.

2

Guaranteed by design; not subject to production test.

1

DD

V

20 Ω typ VD = 1 V, 10 V, IS = −1 mA

INH

INL

or I

INL

INH

2

2.4 V min

0.8 V max
±0.005 µA typ VIN = 0 V or V

DD

100 ns typ RL = 300 Ω , CL = 35 pF;

90 ns typ RL = 300 Ω , CL = 35 pF;

OPEN

10 ns typ RL = 300 Ω , CL = 35 pF;

= 5 V; Figure 16

S

= 1.15 V rms; Figure 18

S

= 1.15 V rms, Figure 19

S

0.05 mA typ Digital inputs = 0 V or 5 V

+3/+30 V min/V max

Rev. B | Page 4 of 12