Analog Devices ADG432, ADG431, ADG433 Datasheet
LC2MOS
a
FEATURES
44 V Supply Maximum Ratings
ⴞ15 V Analog Signal Range
Low On Resistance (<24 ⍀)
Ultralow Power Dissipation (3.9 W)
Low Leakage (<0.25 nA)
Fast Switching Times
t
<165 ns
ON
t
<130 ns
OFF
Break-Before-Make Switching Action
TTL/CMOS Compatible
Plug-in Replacement for DG411/DG412/DG413
APPLICATIONS
Audio and Video Switching
Automatic Test Equipment
Precision Data Acquisition
Battery Powered Systems
Sample Hold Systems
Communication Systems
GENERAL DESCRIPTION
The ADG431, ADG432 and ADG433 are monolithic CMOS
devices comprising four independently selectable switches. They
are designed on an enhanced LC
low power dissipation yet gives high switching speed and low on
resistance.
The on resistance profile is very flat over the full analog input
range ensuring excellent linearity and low distortion when
switching audio signals. Fast switching speed coupled with high
signal bandwidth also make the parts suitable for video signal
switching. CMOS construction ensures ultralow power dissipation making the parts ideally suited for portable and battery
powered instruments.
The ADG431, ADG432 and ADG433 contain four independent SPST switches. The ADG431 and ADG432 differ only in
that the digital control logic is inverted. The ADG431 switches
are turned on with a logic low on the appropriate control input,
while a logic high is required for the ADG432. The ADG433
has two switches with digital control logic similar to that of the
ADG431 while the logic is inverted on the other two switches.
Each switch conducts equally well in both directions when ON
and has an input signal range which extends to the supplies. In
the OFF condition, signal levels up to the supplies are blocked.
All switches exhibit break before make switching action for use
in multiplexer applications. Inherent in the design is low charge
injection for minimum transients when switching the digital inputs.
2
MOS process which provides
Precision Quad SPST Switches
ADG431/ADG432/ADG433
FUNCTIONAL BLOCK DIAGRAMS
IN1
IN2
IN3
IN4
S1
D1
S2
D2
S3
D3
S4
D4
ADG433
IN1
IN2
ADG432
IN3
IN4
S1
D1
S2
D2
S3
D3
S4
D4
IN1
IN2
ADG431
IN3
IN4
SWITCHES SHOWN FOR A LOGIC "1" INPUT
PRODUCT HIGHLIGHTS
1. Extended Signal Range
The ADG431, ADG432 and ADG433 are fabricated on an
enhanced LC
2
MOS process giving an increased signal range
which extends fully to the supply rails.
2. Ultralow Power Dissipation
3. Low R
ON
4. Break-Before-Make Switching
This prevents channel shorting when the switches are configured as a multiplexer.
5. Single Supply Operation
For applications where the analog signal is unipolar, the
ADG431, ADG432 and ADG433 can be operated from a
single rail power supply. The parts are fully specified with a
single +12 V power supply and will remain functional with
single supplies as low as +5 V.
S1
D1
S2
D2
S3
D3
S4
D4
REV. B
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700 World Wide Web Site: http://www.analog.com
Fax: 781/326-8703 © Analog Devices, Inc., 1998
ADG431/ADG432/ADG433–SPECIFICATIONS
1
Dual Supply
(VDD = +15 V ⴞ 10%, VSS = –15 V ⴞ 10%, VL = +5 V ⴞ 10%, GND = O V, unless otherwise noted)
B Versions T Versions
–40ⴗC to –55ⴗC to
Parameter +25ⴗC +85ⴗC +25ⴗC +125ⴗC Units Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range V
R
ON
17 17 Ω typ VD = ±8.5 V, I
24 26 24 27 Ω max V
vs. VD (VS) 15 15 % typ
R
ON
Drift 0.5 0.5 %/°C typ
R
ON
DD
to V
SS
VDD to VSSV
= –10 mA;
= +13.5 V, VSS = –13.5 V
DD
S
RON Match 5 5 % typ VD = 0 V, IS = –10 mA
LEAKAGE CURRENTS V
Source OFF Leakage I
(OFF) ±0.05 ±0.05 nA typ VD = ±15.5 V, V
S
= +16.5 V, VSS = –16.5 V
DD
= ⫿15.5 V;
S
±0.25 ±2 ±0.25 ±15 nA max Test Circuit 2
Drain OFF Leakage I
(OFF) ±0.05 ±0.05 nA typ VD = ±15.5 V, V
D
= ⫿15.5 V;
S
±0.25 ±2 ±0.25 ±15 nA max Test Circuit 2
Channel ON Leakage I
(ON) ±0.1 ±0.1 nA typ V
D
S
= V
D
= ±15.5 V;
S
, I
±0.35 ±3 ±0.35 ±17 nA max Test Circuit 3
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
INL
INH
2.4 2.4 V min
0.8 0.8 V max
Input Current
I
INL
or I
INH
0.005 0.005 µA typ V
IN
= V
INL
or V
INH
±0.02 ±0.02 µA max
CIN Digital Input Capacitance 9 9 pF typ
DYNAMIC CHARACTERISTICS
t
ON
t
OFF
Break-Before-Make Time Delay, t
(ADG433 Only) V
2
90 90 ns typ R
165 175 ns max V
60 60 ns typ R
130 145 ns max V
25 25 ns typ R
D
VDD = +15 V, VSS = –15 V
= 300 Ω, C
L
= ±10 V; Test Circuit 4
S
= 300 Ω, C
L
= ±10 V; Test Circuit 4
S
= 300 Ω, C
L
= VS2 = +10 V;
S1
= 35 pF;
L
= 35 pF;
L
= 35 pF;
L
Test Circuit 5
Charge Injection 5 5 pC typ V
= 0 V, R
S
= 0 Ω, C
S
= 10 nF;
L
Test Circuit 6
OFF Isolation 68 68 dB typ R
= 50 Ω, C
L
= 5 pF, f = 1 MHz;
L
Test Circuit 7
Channel-to-Channel Crosstalk 85 85 dB typ R
= 50 Ω, C
L
= 5 pF, f = 1 MHz;
L
Test Circuit 8
(OFF) 9 9 pF typ f = 1 MHz
C
S
(OFF) 9 9 pF typ f = 1 MHz
C
D
CD, CS (ON) 35 35 pF typ f = 1 MHz
POWER REQUIREMENTS V
= +16.5 V, VSS = –16.5 V
DD
Digital Inputs = 0 V or 5 V
I
DD
0.0001 0.0001 µA typ
0.1 0.2 0.1 0.2 µA max
I
SS
0.0001 0.0001 µA typ
0.1 0.2 0.1 0.2 µA max
I
L
0.0001 0.0001 µA typ
0.1 0.2 0.1 0.2 µA max
Power Dissipation 7.7 7.7 µW max
NOTES
1
Temperature ranges are as follows: B Versions: –40 °C to +85°C; T Versions: –55°C to +125°C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
REV. B–2–
ADG431/ADG432/ADG433
Single Supply
(VDD = +12 V ⴞ 10%, VSS = O V, VL = +5 V ⴞ 10%, GND = O V, unless otherwise noted)
B Versions T Versions
–40ⴗC to –55ⴗC to
Parameter +25ⴗC +85ⴗC +25ⴗC +125ⴗC Units Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to V
R
ON
28 28 Ω typ 0 < V
DD
42 45 42 45 Ω max V
vs. VD (VS) 20 20 % typ
R
ON
Drift 0.5 0.5 %/°C typ
R
ON
0 V to VDDV
< 8.5 V, IS = –10 mA;
D
= +10.8 V
DD
RON Match 5 5 % typ VD = 0 V, IS = –10 mA
LEAKAGE CURRENTS V
Source OFF Leakage I
(OFF) ±0.04 ±0.04 nA typ V
S
= +13.2 V
DD
= 12.2/1 V, VS = 1/12.2 V;
D
±0.25 ±2 ±0.25 ±15 nA max Test Circuit 2
Drain OFF Leakage I
(OFF) ±0.04 ±0.04 nA typ V
D
= 12.2/1 V, VS = 1/12.2 V;
D
±0.25 ±2 ±0.25 ±15 nA max Test Circuit 2
Channel ON Leakage I
, Is (ON) ±0.01 ±0.01 nA typ V
D
= VS = +12.2 V/+1 V;
D
±0.3 ±3 ±0.3 ±17 nA max Test Circuit 3
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
INL
INH
2.4 2.4 V min
0.8 0.8 V max
Input Current
I
INL
or I
INH
0.005 0.005 µA typ V
IN
= V
INL
or V
INH
±0.01 ±0.01 µA max
CIN Digital Input Capacitance 9 9 pF typ
DYNAMIC CHARACTERISTICS
t
ON
t
OFF
Break-Before-Make Time Delay, t
(ADG433 Only) V
2
165 165 ns typ R
240 240 ns max V
60 60 ns typ R
115 115 ns max V
25 25 ns typ R
D
VDD = +12 V, VSS = 0 V
= 300 Ω, C
L
= +8 V; Test Circuit 4
S
= 300 Ω, C
L
= +8 V; Test Circuit 4
S
= 300 Ω, C
L
= VS2 = +10 V;
S1
= 35 pF;
L
= 35 pF;
L
= 35 pF;
L
Test Circuit 5
Charge Injection 25 25 pC typ V
= 0 V, R
S
= 0 Ω, C
S
= 10 nF;
L
Test Circuit 6
OFF Isolation 68 68 dB typ R
= 50 Ω, C
L
= 5 pF, f = 1 MHz;
L
Test Circuit 7
Channel-to-Channel Crosstalk 85 85 dB typ R
= 50 Ω, C
L
= 5 pF, f = 1 MHz;
L
Test Circuit 8
(OFF) 9 9 pF typ f = 1 MHz
C
S
(OFF) 9 9 pF typ f = 1 MHz
C
D
CD, CS (ON) 35 35 pF typ f = 1 MHz
POWER REQUIREMENTS V
= +13.2 V
DD
Digital Inputs = 0 V or 5 V
I
DD
0.0001 0.0001 µA typ
0.03 0.1 0.03 0.1 µA max
I
L
0.0001 0.0001 µA typ
0.03 0.1 0.03 0.1 µA max V
= +5.25 V
L
Power Dissipation 1.9 1.9 µW max
NOTES
1
Temperature ranges are as follows: B Versions: –40 °C to +85°C; T Versions: –55°C to +125°C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
Truth Table (ADG431/ADG432)
Truth Table (ADG433)
ADG431 In ADG432 In Switch Condition
01ON
1 0 OFF
REV. B
Logic Switch 1, 4 Switch 2, 3
0 OFF ON
1 ON OFF
–3–
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