Analog Devices ADG429TQ, ADG429BP, ADG429BN, ADG428TQ, ADG428BP Datasheet

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LC2MOS Latchable 4-/8-Channel

ADG428

DECODERS/DRIVERS

LATCHES

A2 A1 A0 EN

S1A

S4A

ADG429

DECODERS/DRIVERS

A1 A0 EN

S1B

S4B

LATCHES

FEATURES 44 V Supply Maximum Ratings V

to VDD Analog Signal Range

Low On Resistance (60 ⍀ typ) Low Power Consumption (1.6 mW max) Low Charge Injection (<4 pC typ) Fast Switching Break-Before-Make Switching Action Plug-In Replacement for DG428/DG429

APPLICATIONS Automatic Test Equipment Data Acquisition Systems Communication Systems Avionics and Military Systems Microprocessor Controlled Analog Systems Medical Instrumentation

High Performance Analog Multiplexers

ADG428/ADG429

FUNCTIONAL BLOCK DIAGRAMS

GENERAL DESCRIPTION

The ADG428 and ADG429 are monolithic CMOS analog multiplexers comprising eight single channels and four differential channels respectively. On-chip address and control latches facilitate microprocessor interfacing. The ADG428 switches one of eight inputs to a common output as determined by the 3-bit binary address lines A0, A1 and A2. The ADG429 switches one of four differential inputs to a common differential output as determined by the 2-bit binary address lines A0 and A1. An EN input on both devices is used to enable or disable the device. When disabled, all channels are switched OFF. All the control inputs, address and enable inputs are TTL compatible over the full specified operating temperature range. This makes the part suitable for bus-controlled systems such as data acquisition systems, process controls, avionics and ATEs because the TTLcompatible address latches simplify the digital interface design and reduce the board space required.

The ADG428/ADG429 are designed on an enhanced LC

MOS process that provides low power dissipation yet gives high switching speed and low on resistance. Each channel conducts equally well in both directions when ON and has an input signal range that extends to the supplies. In the OFF condition, signal levels up to the supplies are blocked. All channels exhibit break-before-make switching action, preventing momentary shorting when switching channels. Inherent in the design is low charge injection for minimum transients when switching the digital inputs.

The ADG428/ADG429 are improved replacements for the DG428/DG429 Analog Multiplexers.

REV. C

Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

PRODUCT HIGHLIGHTS

1. Extended Signal Range The ADG428/ADG429 are fabricated on an enhanced

MOS process, giving an increased signal range that ex-

LC tends to the supply rails.

2. Low Power Dissipation

3. Low R

4. Single/Dual Supply Operation

5. Single Supply Operation For applications where the analog signal is unipolar, the ADG428/ADG429 can be operated from a single rail power supply. The parts are fully specified with a single +12 V power supply and will remain functional with single supplies as low as +5 V.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 World Wide Web Site: http://www.analog.com Fax: 781/326-8703 © Analog Devices, Inc., 1999

ADG428/ADG429–SPECIFICATIONS

DUAL SUPPLY

Parameter +25ⴗC +85ⴗC +25ⴗC +125ⴗC Units Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range V R

∆R

LEAKAGE CURRENTS

Source OFF Leakage I

Drain OFF Leakage I

ADG428 ±0.07 ±0.7 ±0.07 ±0.7 nA typ Test Circuit 3 ADG429 ±0.05 ±0.5 ±0.05 ±0.5 nA typ

Channel ON Leakage I

ADG428 ±1 ±100 ±1 ±100 nA max Test Circuit 4 ADG429 ±1 ±50 ±1 ±50 nA max

DIGITAL INPUTS

Input High Voltage, V Input Low Voltage, V Input Current

or I

INL

CIN, Digital Input Capacitance 8 8 pF typ f = 1 MHz

DYNAMIC CHARACTERISTICS

TRANSITION

OPEN

OFF

, Write Pulsewidth 100 100 ns min

, Address, Enable Setup Time 100 100 ns min

, Address, Enable Hold Time 10 10 ns min

Charge Injection 4 4 pC typ V

OFF Isolation –75 –75 dB typ R

Channel-to-Channel Crosstalk 85 85 dB typ R

ADG428 40 40 pF typ ADG429 20 20 pF typ

ADG428 54 54 pF typ ADG429 34 34 pF typ

POWER REQUIREMENTS V

NOTES

Temperature ranges are as follows: B Version: –40°C to +85°C; T Version: –55°C to +125°C.

Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

INH

(EN, WR) 115 115 ns typ R

(EN, RS) 105 105 ns typ R

, Reset Pulsewidth 100 100 ns min VS = +5 V

(OFF) 11 11 pF typ f = 1 MHz

(OFF) f = 1 MHz

, CS (ON) f = 1 MHz

(VDD = +15 V, VSS = –15 V, GND = 0 V, WR = 0 V, RS = 2.4 V unless otherwise noted)

B Version T Version

–40ⴗC to –55ⴗC to

to V

VSS to VDDV

60 60 Ω typ VD = ±10 V, I 100 125 100 125 Ω max

10 10 % max –10 V < VS < 10 V, IS = –1 mA

(OFF) ±0.03 ±0.3 ±0.03 ±0.3 nA typ VD = ±10 V, V

±0.5 ±50 ±0.5 ±50 nA max Test Circuit 2

(OFF) V

= ±10 V, V

±1 ±100 ±1 ±100 nA max ±1 ±50 ±1 ±50 nA max

, IS (ON) VS = V

INH

INL

±0.1 ±1 ±0.1 ±1 µA max V

110 110 ns typ R 250 300 250 300 ns max V

2.4 2.4 V min

0.8 0.8 V max

= 0 or V

= 1 MΩ, C

= ±10 V, V

Test Circuit 5

10 10 ns min R

150 225 150 225 ns max V

150 300 150 300 ns max V

= 1 kΩ, C

= +5 V; Test Circuit 6

= 1 kΩ, C

= +5 V; Test Circuit 7

= 1 kΩ, C

= +5 V; Test Circuit 7

= 0 V, R

Test Circuit 10

= 1 kΩ, C

–60 –60 dB min V

= 7 V rms, VEN = 0 V; Test Circuit 11

= 1 kΩ, C

Test Circuit 12

= 0 V, VEN = 0 V

20 20 µA typ 100 100 µA max

0.001 0.001 µA typ 55µA max

= –1 mA

= ⫿10 V;

= ±10 V;

= 35 pF;

= ⫿10 V;

= 35 pF;

= 0 Ω, C

= 15 pF, f = 100 kHz;

= 10 nF;

REV. C–2–

ADG428/ADG429

SINGLE SUPPLY

Parameter +25ⴗC +85ⴗC +25ⴗC +125ⴗC Units Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 to V R

∆R

LEAKAGE CURRENTS

Source OFF Leakage I

Drain OFF Leakage I

ADG428 ±0.015 ±0.015 nA typ Test Circuit 3 ADG429 ±0.008 ±0.008 nA typ

Channel ON Leakage I

ADG428 ±0.02 ±0.02 nA typ Test Circuit 4 ADG429 ±0.01 ±0.01 nA max

DIGITAL INPUTS

Input High Voltage, V Input Low Voltage, V Input Current

or I

INL

CIN, Digital Input Capacitance 8 8 pF typ f = 1 MHz

DYNAMIC CHARACTERISTICS

TRANSITION

OPEN

OFF

, Write Pulsewidth 100 100 ns min

, Address, Enable Setup Time 100 100 ns min

, Address, Enable Hold Time 10 10 ns min

Charge Injection 4 4 pC typ V

OFF Isolation –75 –75 dB typ R

Channel-to-Channel Crosstalk 85 85 dB typ R

ADG428 40 40 pF typ ADG429 20 20 pF typ

ADG428 54 54 pF typ ADG429 34 34 pF typ

POWER REQUIREMENTS V

NOTES

Temperature ranges are as follows: B Version: –40°C to +85°C; T Version: –55°C to +125°C.

Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

INH

(EN, WR) 200 200 ns typ R

(EN, RS) 80 80 ns typ R

, Reset Pulsewidth 100 100 ns min VS = +5 V

(OFF) 11 11 pF typ f = 1 MHz

(OFF) f = 1 MHz

, CS (ON) f = 1 MHz

(VDD = +12 V, VSS = 0 V, GND = 0 V, WR = 0 V, RS = 2.4 V unless otherwise noted)

B Version T Version

–40ⴗC to –55ⴗC to

0 to V

90 90 Ω typ V

= +10 V, I

= –500 µA

200 200 Ω max

10 10 % max 0 V < VS < 10 V, IS = –1 mA

(OFF) ±0.005 ±0.005 nA typ V

= 10 V/0 V, VS = 0 V/10 V;

±0.5 ±50 ±0.5 ±50 nA max Test Circuit 2

(OFF) VD = 10 V/0 V, VS = 0 V/10 V;

±1 ±100 ±1 ±100 nA max ±1 ±50 ±1 ±50 nA max

, IS (ON) VS = VD = 10 V/0 V;

±1 ±100 ±1 ±100 nA max ±1 ±50 ±1 ±50 nA max

INH

INL

250 250 ns typ R 350 450 350 450 ns max V

2.4 2.4 V min

0.8 0.8 V max

±1 ±1 µA max V

= 0 or V

= 1 MΩ, C

= 10 V/0 V, VS8 = 0 V/10 V;

= 35 pF;

Test Circuit 5

25 10 25 10 ns min R

300 400 300 400 ns max V

= 1 kΩ, C

= +5 V; Test Circuit 6

= 1 kΩ, C

= +5 V; Test Circuit 7

= 1 kΩ, C

= +5 V; Test Circuit 7

= 6 V, R

= 35 pF;

= 0 Ω, C

= 10 nF;

Test Circuit 10

–60 –60 dB min V

= 1 kΩ, C

= 7 V rms, VEN = 0 V; Test Circuit 11

= 1 kΩ, C

= 15 pF, f = 100 kHz;

Test Circuit 12

= 0 V, VEN = 0 V

20 20 µA typ 100 100 µA max

REV. C –3–

ADG428/ADG429

WARNING!

ESD SENSITIVE DEVICE

TOP VIEW

(Not to Scale)

ADG428

A0 EN

A1 A2 GND

3 2 1 20 19

9 10 11 12 13

18 17 16 15 14

4 5 6 7 8

TOP VIEW

(Not to Scale)

PIN 1 IDENTIFIER

NC = NO CONNECT

S1 S2 S3

A2 GND V

S5 S6

ADG428

A0WRNCRSA1

TOP VIEW

(Not to Scale)

ADG429

S4A

A0 EN

S3A

S2A

S1A

S4B

A1 GND V

S3B

S2B

S1B

3 2 1 20 19

9 10 11 12 13

18 17 16 15 14

4 5 6 7 8

TOP VIEW

(Not to Scale)

PIN 1 IDENTIFIER

NC = NO CONNECT

S1A S2A S3A

GND V

S1B S2B S3B

ADG429

A0WRNCRSA1

S4A

DANCDB

S4B

ABSOLUTE MAXIMUM RATINGS

= +25°C unless otherwise noted.)

VDD to VSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+44 V

to GND . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +25 V

to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . +0.3 V to –25 V

Analog, Digital Inputs

. . . . . . . . . . VSS – 2 V to VDD + 2 V or

30 mA, Whichever Occurs First

Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . . 30 mA

Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA

(Pulsed at 1 ms, 10% Duty Cycle Max) Operating Temperature Range

Industrial (B Version) . . . . . . . . . . . . . . . . . –40°C to +85°C

Extended (T Version) . . . . . . . . . . . . . . . . –55°C to +125°C

Storage Temperature Range . . . . . . . . . . . . . –65°C to +150°C

Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . +150°C

Cerdip Package, Power Dissipation . . . . . . . . . . . . . . . 900 mW

, Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 73°C/W

Lead Temperature, Soldering (10 sec) . . . . . . . . . . . +300°C

Plastic Package, Power Dissipation . . . . . . . . . . . . . . . 470 mW

, Thermal Impedance . . . . . . . . . . . . . . . . . . . . 115°C/W

Lead Temperature, Soldering (10 sec) . . . . . . . . . . . +260°C

SOIC Package, Power Dissipation . . . . . . . . . . . . . . . . 600 mW

, Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 77°C/W

Lead Temperature, Soldering

Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . +215°C

PLCC Package, Power Dissipation . . . . . . . . . . . . . . . 800 mW

, Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 90°C/W

Lead Temperature, Soldering

Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . +215°C

Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . +220°C

NOTES

Stresses above those listed under Absolute Maximum Ratings may cause perma-

nent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Only one absolute maximum rating may be applied at any one time.

Overvoltages at A, EN, WR, RS , S or D will be clamped by internal diodes. Current

should be limited to the maximum ratings given.

ADG428 PIN CONFIGURATIONS

DIP/SOIC PLCC

ADG429 PIN CONFIGURATIONS

DIP PLCC

ORDERING GUIDE

Model

Temperature Range Package Options

ADG428BN –40°C to +85°C N-18 ADG428BP –40°C to +85°C P-20A ADG428BR –40°C to +85°C R-18 ADG428TQ –55°C to +125°CQ-18

ADG429BN –40°C to +85°C N-18 ADG429BP –40°C to +85°C P-20A ADG429TQ –55°C to +125°CQ-18

NOTES

For availability of MIL-STD-883, Class B processed parts, contact factory.

N = Plastic DIP; P = Plastic Leaded Chip Carrier (PLCC); Q = Cerdip; R = Small Outline IC (SOIC).

–4–

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the ADG428/ADG429 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.

REV. C

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