Analog Devices ADG419TQ, ADG419BRM, ADG419BR, ADG419BN Datasheet
LC2MOS Precision
a
FEATURES
44 V Supply Maximum Ratings
VSS to VDD Analog Signal Range
Low On Resistance (< 35 ⍀)
Ultralow Power Dissipation (< 35 W)
Fast Transition Time (160 ns max)
Break-Before-Make Switching Action
Plug-In Replacement for DG419
APPLICATIONS
Precision Test Equipment
Precision Instrumentation
Battery Powered Systems
Sample Hold Systems
GENERAL DESCRIPTION
The ADG419 is a monolithic CMOS SPDT switch. This
switch is designed on an enhanced LC
vides low power dissipation yet gives high switching speed, low
on resistance and low leakage currents.
The on resistance profile of the ADG419 is very flat over the full
analog input range, ensuring excellent linearity and low distortion. The part also exhibits high switching speed and high signal
bandwidth. CMOS construction ensures ultralow power dissipation, making the parts ideally suited for portable and battery
powered instruments.
Each switch of the ADG419 conducts equally well in both
directions when ON and has an input signal range that extends
to the supplies. In the OFF condition, signal levels up to the
supplies are blocked. The ADG419 exhibits break-beforemake switching action.
2
MOS process that pro-
Mini-DIP Analog Switch
ADG419
FUNCTIONAL BLOCK DIAGRAM
D
S1
ADG419
SWITCH SHOWN FOR A
LOGIC "1" INPUT
PRODUCT HIGHLIGHTS
1. Extended Signal Range
The ADG419 is fabricated on an enhanced LC
cess, giving an increased signal range that extends to the
supply rails.
2. Ultralow Power Dissipation
3. Low R
4. Single Supply Operation
ON
For applications where the analog signal is unipolar, the
ADG419 can be operated from a single rail power supply.
The part is fully specified with a single +12 V power supply
and will remain functional with single supplies as low as
+5 V.
S2
IN
2
MOS pro-
REV. A
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700 World Wide Web Site: http://www.analog.com
Fax: 781/326-8703 © Analog Devices, Inc., 1998
ADG419–SPECIFICATIONS
1
(V
Dual Supply
= +15 V ⴞ 10%, V
DD
Parameter +25ⴗC +85ⴗC +25ⴗC +125ⴗC Units Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range V
R
ON
LEAKAGE CURRENTS V
Source OFF Leakage I
Drain OFF Leakage I
Channel ON Leakage ID, I
(OFF) ±0.1 ±0.1 nA typ VD = ±15.5 V, V
S
(OFF) ±0.1 ±0.1 nA typ VD = ±15.5 V, V
D
(ON) ±0.4 ±0.4 nA typ V
S
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
INH
INL
Input Current
or I
I
INL
INH
DYNAMIC CHARACTERISTICS
t
TRANSITION
2
Break-Before-Make Time 30 30 ns typ R
Delay, t
D
OFF Isolation 80 80 dB typ R
Channel-to-Channel Crosstalk 90 70 dB typ R
(OFF) 6 6 pF typ f = 1 MHz
C
S
CD, CS (ON) 55 55 pF typ f = 1 MHz
POWER REQUIREMENTS V
I
DD
I
SS
I
L
NOTES
1
Temperature ranges are as follows: B Version: –40°C to +85°C; T Version: –55°C to +125°C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
= –15 V ⴞ 10%, VL = +5 V ⴞ 10%, GND = 0 V, unless otherwise noted)
SS
B Version T Version
–40ⴗC to –55ⴗC to
SS
to V
DD
VSS to V
DD
V
25 25 Ω typ VD = ±12.5 V, I
35 45 35 45 Ω max V
= +13.5 V, VSS = –13.5 V
DD
= +16.5 V, VSS = –16.5 V
DD
±0.25 ±5 ±0.25 ±15 nA max Test Circuit 2
±0.75 ±5 ±0.75 ±30 nA max Test Circuit 2
= V
= ±15.5 V;
S
D
±0.75 ±5 ±0.75 ±30 nA max Test Circuit 3
2.4 2.4 V min
0.8 0.8 V max
±0.005 ±0.005 µA typ V
IN
= V
INL
or V
±0.5 ±0.5 µA max
160 200 145 200 ns max R
= 300 Ω, C
L
= ±10 V, V
V
S1
Test Circuit 4
= 300 Ω, C
5 5 ns min VS1 = V
L
= ±10 V;
S2
Test Circuit 5
= 50 Ω, f = 1 MHz;
L
Test Circuit 6
= 50 Ω, f = 1 MHz;
L
Test Circuit 7
= +16.5 V, VSS = –16.5 V
0.0001 0.0001 µA typ V
DD
= 0 V or 5 V
IN
1 2.5 1 2.5 µA max
0.0001 0.0001 µA typ
1 2.5 1 2.5 µA max
0.0001 0.0001 µA typ V
= +5.5 V
L
1 2.5 1 2.5 µA max
= –10 mA
S
= ⫿15.5 V;
S
= ⫿15.5 V;
S
INH
= 35 pF;
L
= ⫿10 V;
S2
= 35 pF;
L
–2–
REV. A
ADG419
(V
Single Supply
= +12 V ⴞ 10%, V
DD
Parameter +25ⴗC +85ⴗC +25ⴗC +125ⴗC Units Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 to V
R
ON
LEAKAGE CURRENT V
Source OFF Leakage I
Drain OFF Leakage I
Channel ON Leakage I
(OFF) ±0.1 ±0.1 nA typ V
S
(OFF) ±0.1 ±0.1 nA typ V
D
, I
(ON) ±0.4 ±0.4 nA typ V
D
S
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
INH
INL
Input Current
I
or I
INL
INH
DYNAMIC CHARACTERISTICS
t
TRANSITION
2
Break-Before-Make Time 60 60 ns typ R
Delay, t
D
OFF Isolation 80 80 dB typ R
Channel-to-Channel Crosstalk 90 70 dB typ R
CS (OFF) 13 13 pF typ f = 1 MHz
CD, CS (ON) 65 65 pF typ f = 1 MHz
POWER REQUIREMENTS V
I
DD
I
L
NOTES
1
Temperature ranges are as follows: B Version: –40°C to +85°C; T Version: –55°C to +125°C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
= 0 V, VL = +5 V ⴞ 10%, GND = 0 V, unless otherwise noted)
SS
B Version T Version
–40ⴗC to –55ⴗC to
DD
0 to V
DD
40 40 Ω typ V
60 70 Ω max V
V
= +3 V, +8.5 V, IS = –10 mA
D
= +10.8 V
DD
= +13.2 V
DD
= 12.2 V/1 V, VS = 1 V/12.2 V;
D
±0.25 ±5 ±0.25 ±15 nA max Test Circuit 2
= 12.2 V/1 V, VS = 1 V/12.2 V;
D
±0.75 ±5 ±0.75 ±30 nA max Test Circuit 2
= VD = 12.2 V/1 V;
S
±0.75 ±5 ±0.75 ±30 nA max Test Circuit 3
2.4 2.4 V min
0.8 0.8 V max
±0.005 ±0.005 µA typ V
IN
= V
INL
or V
±0.5 ±0.5 µA max
180 250 170 250 ns max R
= 300 Ω, C
L
= 0 V/8 V, VS2 = 8 V/0 V;
V
S1
Test Circuit 4
= 300 Ω, C
L
VS1 = VS2 = +8 V;
Test Circuit 5
= 50 Ω, f = 1 MHz;
L
Test Circuit 6
= 50 Ω, f = 1 MHz;
L
Test Circuit 7
= +13.2 V
0.0001 0.0001 µA typ V
DD
= 0 V or 5 V
IN
1 2.5 1 2.5 µA max
0.0001 0.0001 µA typ V
= +5.5 V
L
1 2.5 1 2.5 µA max
INH
= 35 pF;
L
= 35 pF;
L
Table I. Truth Table
Logic Switch 1 Switch 2
0 ON OFF
1 OFF ON
ORDERING GUIDE
Model Temperature Ranges Package Options*
ADG419BN –40°C to +85°C N-8
ADG419BR –40°C to +85°C SO-8
ADG419BRM –40°C to +85°C RM-8
ADG419TQ –55°C to +125°C Q-8
*N = Plastic DIP, Q = Cerdip, RM = µSOIC, SO = 0.15" Small Outline IC (SOIC).
REV. A
–3–
PIN CONFIGURATION
DIP/SOIC/SOIC
8
S2
7
V
SS
6
IN
5
V
L
GND
V
D
S1
DD
1
2
ADG419
TOP VIEW
3
(Not to Scale)
4
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