Analog Devices ADG417BR, ADG417BN Datasheet

LC2MOS Precision

ADG417

IN

D

S

SWITCH SHOWN FOR A

LOGIC "1" INPUT

a

FEATURES
44 V Supply Maximum Ratings
V

to VDD Analog Signal Range

SS

Low On Resistance (<35 ⍀)
Ultralow Power Dissipation (<35 ␮W)
Fast Switching Times

t

(160 ns max)

ON

t

(100 ns max)

OFF

Break-Before-Make Switching Action
Plug-In Replacement for DG417

APPLICATIONS
Precision Test Equipment
Precision Instrumentation
Battery Powered Systems
Sample Hold Systems

GENERAL DESCRIPTION

The ADG417 is a monolithic CMOS SPST switch. This switch
is designed on an enhanced LC
power dissipation yet gives high switching speed, low on resis­tance and low leakage currents.

The on resistance profile of the ADG417 is very flat over the
full analog input range ensuring excellent linearity and low
distortion. The part also exhibits high switching speed and high
signal bandwidth. CMOS construction ensures ultralow power
dissipation making the parts ideally suited for portable and
battery powered instruments.

The ADG417 switch, which is turned ON with a logic low on
the control input, conducts equally well in both directions when
ON and has an input signal range that extends to the supplies.
In the OFF condition, signal levels up to the supplies are
blocked. The ADG417 exhibits break-before-make switching
action for use in multiplexer applications. Inherent in the design
is low charge injection for minimum transients when switching
the digital input.

2

MOS process that provides low

Mini-DIP Analog Switch

ADG417

FUNCTIONAL BLOCK DIAGRAM

PRODUCT HIGHLIGHTS

1. Extended Signal Range
The ADG417 is fabricated on an enhanced LC
giving an increased signal range that extends to the supply
rails.

2. Ultralow Power Dissipation

3. Low R

4. Single Supply Operation

ON

For applications where the analog signal is unipolar, the
ADG417 can be operated from a single rail power supply.
The part is fully specified with a single +12 V power supply
and will remain functional with single supplies as low as
+5 V.

2

MOS process,

REV. A

Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone] World Wide Web Site: http://www.analog.com
Fax: [phone] © Analog Devices, Inc., 1998

ADG417–SPECIFICATIONS

1

(V

Dual Supply

= +15 V ⴞ 10%, V

DD

Parameter +25ⴗC +85ⴗC +25ⴗC +125ⴗC Units Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range V
R

ON

LEAKAGE CURRENTS V

Source OFF Leakage I

Drain OFF Leakage I

Channel ON Leakage I

(OFF) ±0.1 ±0.1 nA typ VD = ±15.5 V, V

S

(OFF) ±0.1 ±0.1 nA typ VD = ±15.5 V, V

D

, I

(ON) ±0.1 ±0.1 nA typ V

D

S

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V

INH

INL

Input Current

I

or I

INL

INH

DYNAMIC CHARACTERISTICS

t

ON

t

OFF

2

Charge Injection 7 7 pC typ V

OFF Isolation 80 80 dB typ R

C

(OFF) 6 6 pF typ

S

C

(OFF) 6 6 pF typ

D

CD, CS (ON) 55 55 pF typ

POWER REQUIREMENTS V

I

DD

I

SS

I

L

NOTES

1

Temperature ranges are as follows: B Version: –40°C to +85°C; T Version: –55°C to +125°C.

2

Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

= –15 V ⴞ 10%, VL = +5 V ⴞ 10%, GND = 0 V, unless otherwise noted)

SS

B Version T Version

–40ⴗC to –55ⴗC to

SS

to V

DD

VSS to V

DD

V

25 25 Ω typ VD = ±12.5 V, I
35 45 35 45 Ω max V

= +13.5 V, VSS = –13.5 V

DD

= +16.5 V, VSS = –16.5 V

DD

±0.25 ±5 ±0.25 ±15 nA max Test Circuit 2
±0.25 ±5 ±0.25 ±15 nA max Test Circuit 2

= V

= ±15.5 V;

S

D

±0.4 ±5 ±0.4 ±30 nA max Test Circuit 3

2.4 2.4 V min

0.8 0.8 V max

±0.005 ±0.005 µA typ V

IN

= V

INL

or V

±0.5 ±0.5 µA max

100 100 ns typ R
160 200 145 200 ns max V
60 60 ns typ R
100 150 100 150 ns max V

= 300 Ω, C

L

= ±10 V; Test Circuit 4

S

= 300 Ω, C

L

= ±10 V; Test Circuit 4

S

= 0 V, R

S

C

= 10 nF; Test Circuit 5

L

= 50 Ω, f = 1 MHz;

L

= 0 Ω,

L

Test Circuit 6

= +16.5 V, VSS = –16.5 V

0.0001 0.0001 µA typ V

DD

= 0 V or 5 V

IN

1 2.5 1 2.5 µA max

0.0001 0.0001 µA typ
1 2.5 1 2.5 µA max

0.0001 0.0001 µA typ V

= +5.5 V

L

1 2.5 1 2.5 µA max

= –10 mA

S

= ⫿15.5 V;

S

= ⫿15.5 V;

S

INH

= 35 pF;

L

= 35 pF;

L

–2–

REV. A

ADG417

TOP VIEW

(Not to Scale)

8

7

6

5

1

2

3

4

S

NC

GND

D
V

SS

IN
V

L

V

DD

ADG417

NC = NO CONNECT

Single Supply

Parameter +25ⴗC +85ⴗC +25ⴗC +125ⴗC Units Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 to V
R

ON

LEAKAGE CURRENT V

Source OFF Leakage I

Drain OFF Leakage I

Channel ON Leakage I

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V
Input Current

I

or I

INL

INH

DYNAMIC CHARACTERISTICS

t

ON

t

OFF

Charge Injection 11 11 pC typ V

OFF Isolation 80 80 dB typ R

C

(OFF) 13 13 pF typ

S

C

(OFF) 13 13 pF typ

D

CD, CS (ON) 65 65 pF typ

POWER REQUIREMENTS V

I

DD

I

L

NOTES

1

Temperature ranges are as follows: B Version: –40°C to +85°C; T Version: –55°C to +125°C.

2

Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

1

(V

= +12 V ⴞ 10%, V

DD

(OFF) ±0.1 ±0.1 nA typ V

S

(OFF) ±0.1 ±0.1 nA typ V

D

, I

(ON) ±0.1 ±0.1 nA typ V

D

S

INH

INL

2

= 0 V, VL = +5 V ⴞ 10%, GND = 0 V, unless otherwise noted)

SS

B Version T Version

–40ⴗC to –55ⴗC to

DD

0 to V

DD

V

40 40 Ω typ V

60 70 Ω max V

±0.25 ±5 ±0.25 ±15 nA max Test Circuit 2
±0.25 ±5 ±0.25 ±15 nA max Test Circuit 2
±0.4 ±5 ±0.4 ±30 nA max Test Circuit 3

2.4 2.4 V min

0.8 0.8 V max

±0.005 ±0.005 µA typ V
±0.5 ±0.5 µA max

180 250 180 250 ns max R

85 110 85 110 ns max R

0.0001 0.0001 µA typ V

12.5 12.5 µA max

0.0001 0.0001 µA typ V

12.5 12.5 µA max

= +3 V, +8.5 V, IS = –10 mA

D

= +10.8 V

DD

= +13.2 V

DD

= 12.2 V/1 V, VS = 1 V/12.2 V;

D

= 12.2 V/1 V, VS = 1 V/12.2 V;

D

= VD = 12.2 V/1 V;

S

= V

INL

or V

= 0 Ω,

S

INH

= 35 pF;

L

= 35 pF;

L

IN

= 300 Ω, C

L

V

= +8 V; Test Circuit 4

S

= 300 Ω, C

L

V

= +8 V; Test Circuit 4

S

= 0 V, R

S

C

= 10 nF; Test Circuit 5

L

= 50 Ω, f = 1 MHz;

L

Test Circuit 6

= +13.2 V

DD

= 0 V or 5 V

IN

= +5.5 V

L

Table I. Truth Table

Logic Switch Condition

0ON
1 OFF

ORDERING GUIDE

Model Temperature Range Package Options*

ADG417BN –40°C to +85°C N-8
ADG417BR –40°C to +85°C SO-8

*N = Plastic DIP, SO = 0.15" Small Outline IC (SOIC).

REV. A –3–

PIN CONFIGURATION

DIP/SOIC