44 V supply maximum ratings
±15 V analog signal range
Low on resistance (< 35 Ω)
Ultralow power dissipation (35 μW)
Fast switching times
t
< 175 ns
ON
t
< 145 ns
OFF
TTL-/CMOS-compatible
Plug-in replacement for DG411/DG412/DG413
APPLICATIONS
Audio and video switching
Automatic test equipment
Precision data acquisition
Battery-powered systems
Sample-and-hold systems
Communication systems
GENERAL DESCRIPTION
The ADG411, ADG412, and ADG413 are monolithic CMOS
devices comprising four independently selectable switches.
They are designed on an enhanced LC
provides low power dissipation yet gives high switching speed
and low on resistance.
The on resistance profile is very flat over the full analog input
range ensuring excellent linearity and low distortion when
switching audio signals. Fast switching speed coupled with high
signal bandwidth also make the parts suitable for video signal
switching. CMOS construction ensures ultralow power
dissipation, making the parts ideally suited for portable and
battery-powered instruments.
2
MOS process which
FUNCTIONAL BLOCK DIAGRAMS
Precision Quad SPST Switches
ADG411/ADG412/ADG413
The ADG411, ADG412, and ADG413 contain four independent
SPST switches. The ADG411 and ADG412 differ only in that
the digital control logic is inverted. The ADG411 switches are
turned on with a logic low on the appropriate control input,
while a logic high is required for the ADG412. The ADG413
has two switches with digital control logic similar to that of the
ADG411 while the logic is inverted on the other two switches.
Each switch conducts equally well in both directions when on,
and each has an input signal range that extends to the supplies.
In the off condition, signal levels up to the supplies are blocked.
All switches exhibit break-before-make switching action for use
in multiplexer applications. Inherent in the design is low charge
injection for minimum transients when switching the digital
inputs.
PRODUCT HIGHLIGHTS
1. Extended signal range
The ADG411, ADG412, and ADG413 are fabricated on an
enhanced LC
extends fully to the supply rails.
2. Ultralow power dissipation
3. Low R
4. Break-before-make switching
This prevents channel shorting when the switches are
configured as a multiplexer.
5. Single-supply operation
For applications where the analog signal is unipolar, the
ADG411, ADG412, and ADG413 can be operated from a
single-rail power supply. The parts are fully specified with a
single 12 V power supply and remain functional with single
supplies as low as 5 V.
2
MOS, giving an increased signal range which
ON
IN1
IN2
ADG411
IN3
IN4
SWITCHES SHOWN FOR A LOGIC 1 INPUT
Rev. D
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
B Version T Version
Parameter +25°C −40°C to + 85°C +25°C −55°C to +125°C Unit Test Conditions/Comments
ANALOG SIGNAL RANGE 0 V to VDD 0 V to VDD V
RON 40 40 Ω typ 0 < VD = 8.5 V, IS = −10 mA;
80 100 80 100 Ω max VDD = 10.8 V
LEAKAGE CURRENTS VDD = 13.2 V
Source OFF Leakage IS (OFF) ±0.1 ±0.1 nA typ VD = 12.2 V/1 V, VS = 1 V/12.2 V;
±0.25 ±5 ±0.25 ±20 nA max Figure 15
Drain OFF Leakage ID (OFF) ±0.1 ±0.1 nA typ VD = 12.2 V/1 V, VS = 1 V/12.2 V;
±0.25 ±5 ±0.25 ±20 nA max Figure 15
Channel ON Leakage ID, IS (ON) ±0.1 ±0.1 nA typ VD = VS = 12.2 V/1 V;
±0.4 ±10 ±0.4 ±40 nA max Figure 16
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
Input Current
I
or I
0.005 0.005 μA typ VIN = V
INL
INH
±0.5 ±0.5 μA max
DYNAMIC CHARACTERISTICS2
tON 175 175 ns typ RL = 300 Ω, CL = 35 pF;
250 250 ns max VS = 8 V; Figure 17
t
95 95 ns typ RL = 300 Ω, CL = 35 pF;
OFF
125 125 ns max VS = 8 V; Figure 17
Break-Before-Make Time
Delay, t
(ADG413 Only)
D
Charge Injection 25 25 pC typ
OFF Isolation 68 68 dB typ
Channel-to-Channel Crosstalk 85 85 dB typ
CS (OFF) 9 9 pF typ f = 1 MHz
CD (OFF) 9 9 pF typ f = 1 MHz
CD, CS (ON) 35 35 pF typ f = 1 MHz
POWER REQUIREMENTS
IDD 0.0001 0.0001 μA typ
1 5 1 5 μA max
IL 0.0001 0.0001 μA typ
1 5 1 5 μA max VL = 5.25 V
1
Temperature ranges are as follows: B versions:−40°C to +85°C; T versions: −55°C to +125°C.
2
Guaranteed by design; not subject to production test.
2.4 2.4 V min
INH
0.8 0.8 V max
INL
25 25 ns typ
= 300 Ω, CL = 35 pF;
R
L
= VS2 = +10 V; Figure 18
V
S1
= 0 V, RS = 0 Ω, CL = 10 nF;
V
S
Figure 19
= 50 Ω, CL = 5 pF, f = 1 MHz;
R
L
Figure 20
= 50 Ω, CL = 5 pF, f = 1 MHz;
R
L
Figure 21
= 13.2 V;
V
DD
Digital inputs = 0 V or 5 V
INL
or V
INH
Table 3. Truth Table (ADG411/ADG412)
ADG411 In ADG412 In Switch Condition
0 1 ON
1 0 OFF
Table 4. Truth Table (ADG413)
Logic Switch 1, 4 Switch 2, 3
0 OFF ON
1 ON OFF
Rev. D | Page 4 of 16
Page 5
ADG411/ADG412/ADG413
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 5.
Parameters Ratings
VDD to VSS 44 V
VDD to GND −0.3 V to +25 V
VSS to GND +0.3 V to −25 V
VL to GND −0.3 V to VDD + 0.3 V
Analog, Digital Inputs1
Continuous Current, S or D 30 mA
Peak Current, S or D (Pulsed at 1 ms,
10% Duty Cycle max)
Operating Temperature Range
Industrial (B Version) −40°C to +85°C
Extended (T Version) −55°C to +125°C
Storage Temperature Range −65°C to +150°C
Junction Temperature 150°C
PDIP, Power Dissipation 470 mW
θJA Thermal Impedance 117°C/W
Lead Temperature, Soldering (10 s) 260°C
SOIC Package, Power Dissipation 600 mW
θJA Thermal Impedance 77°C/W
TSSOP Package, Power Dissipation 450 mW
θJA Thermal Impedance 115°C/W
θJC Thermal Impedance 35°C/W
Lead Temperature, Soldering
Vapor Phase (60 s) 215°C
Infrared (15 s) 220°C
1
Overvoltages at IN, S, or D are clamped by internal diodes. Current should
be limited to the maximum ratings given.
− 2 V to VDD + 2 V or
V
SS
30 mA, whichever
occurs first
100 mA
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those listed in the operational sections
of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability. Only one absolute maximum rating may be
applied at any one time.
ESD CAUTION
Rev. D | Page 5 of 16
Page 6
ADG411/ADG412/ADG413
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
IN1
V
GND
IN4
D1
S1
SS
S4
D4
1
2
ADG411/
3
ADG412/
ADG413
4
TOP VIEW
5
(Not to Scale)
6
7
8
16
IN2
15
D2
14
S2
13
V
DD
12
V
L
11
S3
10
D3
9
IN3
Figure 4. Pin Configuration
Table 6. Pin Function Descriptions
Pin No. Mnemonic Description
1, 8, 9, 16 IN1–IN4 Logic Control Input.
2, 7, 10, 15 D1–D4 Drain Terminal. Can be an input or output.
3, 6, 11, 14 S1–S4 Source Terminal. Can be an input or output.
4 VSS
Most Negative Power Supply Potential in Dual Supplies. In single supply applications, it may be
connected to GND.
5 GND Ground (0 V) Reference.
12 VL Logic Power Supply (5 V).
13 VDD Most Positive Power Supply Potential.
00024-004
Rev. D | Page 6 of 16
Page 7
ADG411/ADG412/ADG413
TYPICAL PERFORMANCE CHARACTERISTICS
50
40
V
= +5V
DD
V
= –5V
30
V
= +10V
(Ω)
ON
R
DD
V
= –10V
SS
20
10
V
= +15V
DD
V
= –15V
SS
0
–2020
VD OR VS– DRAIN OR SOURCE VOLTAGE (V)
SS
Figure 5. On Resistance as a Function of V
50
40
30
(Ω)
ON
R
20
10
T
= 25°C
A
V
= +5V
L
= +12V
V
DD
V
= –12V
SS
100–10
(VS) Dual Supplies
D
VDD = +15V
V
= –15V
SS
V
= +5V
L
125°C
85°C
25°C
00024-005
50
VDD = +5V
40
V
= 0V
SS
V
= +10V
DD
= 0V
V
30
)
Ω
(
ON
R
20
10
V
= +15V
DD
= 0V
V
SS
0
02
SS
VD OR VS– DRAIN OR SOURCE VOLTAGE (V)
V
V
DD
SS
= +12V
= 0V
Figure 8. On Resistance as a Function of V
T
= 25°C
A
V
= +5V
L
15105
(VS) Single Supply
D
00024-008
0
(A)
SUPPLY
I
100m
10m
1m
100μ
10μ
1μ
VDD = +15V
= –15V
V
SS
= +5V
V
L
4 SW
1 SW
I+, I–
I
L
0
–20–15–10–505101520
Figure 6. On Resistance as a Function of V
VD OR VS– DRAIN OR SOURCE VOLTAGE (V)
(VS) for Different Temperatures
D
10
VDD = +15V
= –15V
V
SS
= +5V
V
L
1
= ±15V
V
D
= ±15V
V
S
0.1
0.01
LEAKAGE CURRENT (nA)
0.001
1001k10k100k1M100M
(OFF)
I
S
I
(ON)
D
FREQUENCY (Hz)
ID (OFF)
Figure 7. Leakage Currents as a Function of Temperature
00024-006
00024-007
100n
101001k10k100k1M10M
FREQUENCY (Hz)
Figure 9. Supply Current vs. Input Switching Frequency
0.04
VDD = +15V
V
SS
T
A
V
L
0.02
0
–0.02
LEAKAGE CURRENT (nA)
–0.04
–2020100–10
= –15V
= 25°C
= +5V
VD OR VS– DRAIN OR SOURCE VOLTAGE (V)
I
(ON)
D
(OFF)
I
D
Figure 10. Leakage Currents as a Function of V
I
S
D
(OFF)
(VS)
00024-009
00024-010
Rev. D | Page 7 of 16
Page 8
ADG411/ADG412/ADG413
120
100
80
OFF ISOLATION (dB)
60
VDD = +15V
= –15V
V
SS
V
= +5V
L
110
100
90
80
CROSSTALK (dB)
70
VDD = +15V
= –15V
V
SS
= +5V
V
L
40
10010M1M100k10k1k
FREQUENCY (Hz)
Figure 11. Off Isolation vs. Frequency
00024-011
60
10010M1M100k10k1k
FREQUENCY (Hz)
Figure 12. Crosstalk vs. Frequency
00024-012
Rev. D | Page 8 of 16
Page 9
ADG411/ADG412/ADG413
TERMINOLOGY
RON
Ohmic resistance between D and S.
I
(OFF)
S
Source leakage current with the switch OFF.
I
(OFF)
D
Drain leakage current with the switch OFF.
I
, IS (ON)
D
Channel leakage current with the switch ON.
V
(VS)
D
Analog voltage on terminals D, S.
C
(OFF)
S
OFF switch source capacitance.
C
(OFF)
D
OFF switch drain capacitance.
C
, CS (ON)
D
ON switch capacitance.
t
ON
Delay between applying the digital control input and the output
switching on.
t
OFF
Delay between applying the digital control input and the output
switching off.
t
D
OFF time or ON time measured between the 90% points of
both switches, when switching from one address state to
another.
Crosstalk
A measure of unwanted signal which is coupled through from
one channel to another as a result of parasitic capacitance.
Off Isolation
A measure of unwanted signal coupling through an OFF switch.
Charge Injection
A measure of the glitch impulse transferred from the digital
input to the analog output during switching.
Rev. D | Page 9 of 16
Page 10
ADG411/ADG412/ADG413
APPLICATIONS
Figure 13 illustrates a precise, fast, sample-and-hold circuit. An
AD845 is used as the input buffer while the output operational
amplifier is an AD711. During the track mode, SW1 is closed
and the output V
follows the input signal VIN. In the hold
OUT
mode, SW1 is opened and the signal is held by the hold
capacitor C
.
H
Due to switch and capacitor leakage, the voltage on the hold
capacitor decreases with time. The ADG411/ADG412/ADG413
minimizes this droop due to its low leakage specifications. The
droop rate is further minimized by the use of a polystyrene
hold capacitor. The droop rate for the circuit shown is typically
30 μV/μs.
A second switch, SW2, which operates in parallel with SW1, is
included in this circuit to reduce pedestal error. Since both
switches are at the same potential, they have a differential effect
on the op amp AD711, which minimizes charge injection
effects. Pedestal error is also reduced by the compensation
network R
and CC. This compensation network also reduces
C
the hold time glitch while optimizing the acquisition time.
Using the illustrated op amps and component values, the
pedestal error has a maximum value of 5 mV over the ±10 V
input range. Both the acquisition and settling times are 850 ns.
+15V +5V
+15V
V
IN
AD845
–15V
SW1
S
SW2
S
ADG411
ADG412
ADG413
–15V
Figure 13. Fast, Accurate Sample-and-Hold
2200pF
+15V
D
D
C
C
R
C
75
Ω
2200pF
1000pF
C
H
AD711
–15V
V
OUT
00024-013
Rev. D | Page 10 of 16
Page 11
ADG411/ADG412/ADG413
TEST CIRCUITS
I
DS
V1
SD
IS (OFF)ID (OFF)
SD
AA
SD
ID (ON)
A
V
S
RON = V1/I
DS
Figure 14. On Resistance
00024-014
V
S
V
D
00024-015
Figure 15. Off Leakage
V
S
Figure 16. On Leakage
V
D
00024-016
+15V+5V
0.1μF0.1μF
3V
V
DDVL
S
D
R
V
S
IN
V
GND
SS
0.1μF
–15V
300
L
Ω
C
L
35pF
V
OUT
V
ADG411
IN
V
IN
ADG412
V
OUT
50%50%
3V
50%50%
90%90%
t
ON
t
OFF
00024-017
Figure 17. Switching Times
+15V+5V
0.1μF0.1μF
V
DDVL
V
V
S1D1
S1
S2
S2
IN1, IN2
V
IN
GND
0.1μF
V
–15V
V
OUT1
C
R
L1
V
C
L2
35pF
OUT2
300Ω
D2
R
L2
300Ω
SS
L1
35pF
Figure 18. Break-Before-Make Time Delay
+15V+5V
V
V
V
OUT1
OUT2
3V
IN
0V
0V
0V
50%50%
90%
90%
t
D
t
90%
D
90%
00024-018
V
DDVL
C
L
10nF
V
OUT
R
S
V
S
IN
GND
SD
V
SS
–15V
3V
V
IN
V
OUT
Q
INJ
= CL× ΔV
OUT
Δ
V
OUT
00024-019
Figure 19. Charge Injection
Rev. D | Page 11 of 16
Page 12
ADG411/ADG412/ADG413
V
V
+15V +5V
F0.1μF
0.1μ
V
DDVL
SD
IN
V
S
IN
V
GND
SS
0.1μF
–15V
V
OUT
R
L
50
Ω
00024-020
OUT
V
S
R
L
50Ω
Figure 20. Off Isolation
+15V +5V
0.1μF0.1μF
V
DDVL
S
D
V
IN1
D
S
V
GND
0.1μF
SS
CHANNEL-TO-CHANNEL
CROSSTALK = 20 × LOG V
–15V
50Ω
V
IN2
Figure 21. Channel-to-Channel Crosstalk
NC
S/VOUT
00024-021
Rev. D | Page 12 of 16
Page 13
ADG411/ADG412/ADG413
OUTLINE DIMENSIONS
10.00 (0.3937)
9.80 (0.3858)
4.00 (0.1575)
3.80 (0.1496)
0.25 (0.0098)
0.10 (0.0039)
COPLANARITY
0.10
CONTROLLING DIME NSIONS ARE IN MILLIMETERS; INCH DIMENSIO NS
(IN PARENTHESES) ARE RO UNDE D- OFF MILLIMETER EQUIVALENTS FOR
REFERENCE ONLYAND ARE NOT AP PROPRIATE FOR USE IN DESIGN.
16
1
1.27 (0.0500)
BSC
0.51 (0.0201)
0.31 (0.0122)
COMPLIANT TO JEDEC STANDARDS MS-012-AC
9
6.20 (0.2441)
5.80 (0.2283)
8
1.75 (0.0689)
1.35 (0.0531)
SEATING
PLANE
8°
0°
0.25 (0.0098)
0.17 (0.0067)
0.50 (0.0197)
0.25 (0.0098)
1.27 (0.0500)
0.40 (0.0157)
45°
060606-A
Figure 22. 16-Lead Standard Small Outline Package [SOIC_N]
Narrow Body
(R-16)
Dimensions shown in millimeters and (inches)
5.10
5.00
4.90
0.15
0.05
4.50
4.40
4.30
PIN 1
16
0.65
BSC
COPLANARITY
COMPLIANT TO JEDEC S T ANDARDS MO-153-AB
0.10
0.30
0.19
9
81
1.20
MAX
SEATING
PLANE
6.40
BSC
0.20
0.09
8°
0°
0.75
0.60
0.45
Figure 23. 16-Lead Thin Shrink Small Outline Package [TSSOP]
(RU-16)
Dimensions shown in millimeters
Rev. D | Page 13 of 16
Page 14
ADG411/ADG412/ADG413
0.210 (5.33)
MAX
0.150 (3.81)
0.130 (3.30)
0.115 (2.92)
0.022 (0.56)
0.018 (0.46)
0.014 (0.36)
0.800 (20.32)
0.790 (20.07)
0.780 (19.81)
16
1
0.100 (2.54)
BSC
0.070 (1.78)
0.060 (1.52)
0.045 (1.14)
CONTROLL ING DIMENSIONS ARE IN INCHES; MILLIMET E R DIMENSIONS
(IN PARENTHESES) ARE ROUNDED-OFF INCH EQUIVALENTS FOR
REFERENCE ON LY AND ARE NOT APPROPRIATE FOR USE IN DES IGN.
CORNER LEADS MAY BE CONFIGURED AS WHOL E OR HALF L E ADS.