Analog Devices ADG411 2 3 c Datasheet

LC2MOS

FEATURES

44 V supply maximum ratings ±15 V analog signal range Low on resistance (< 35 Ω) Ultralow power dissipation (35 µW) Fast switching times

< 175 ns

< 145 ns

OFF

TTL-/CMOS-compatible Plug-in replacement for DG411/DG412/DG413

APPLICATIONS

Audio and video switching Automatic test equipment Precision data acquisition Battery-powered systems Sample-and-hold systems Communication systems

GENERAL DESCRIPTION

The ADG411, ADG412, and ADG413 are monolithic CMOS devices comprising four independently selectable switches. They are designed on an enhanced LC provides low power dissipation yet gives high switching speed and low on resistance.

The on resistance profile is very flat over the full analog input range ensuring excellent linearity and low distortion when switching audio signals. Fast switching speed coupled with high signal bandwidth also make the parts suitable for video signal switching. CMOS construction ensures ultralow power dissipation, making the parts ideally suited for portable and battery-powered instruments.

MOS process which

Precision Quad SPST Switches

ADG411/ADG412/ADG413

The ADG411, ADG412, and ADG413 contain four independent SPST switches. The ADG411 and ADG412 differ only in that the digital control logic is inverted. The ADG411 switches are turned on with a logic low on the appropriate control input, while a logic high is required for the ADG412. The ADG413 has two switches with digital control logic similar to that of the ADG411 while the logic is inverted on the other two switches.

Each switch conducts equally well in both directions when on, and each has an input signal range that extends to the supplies. In the off condition, signal levels up to the supplies are blocked. All switches exhibit break-before-make switching action for use in multiplexer applications. Inherent in the design is low charge injection for minimum transients when switching the digital inputs.

PRODUCT HIGHLIGHTS

1. Extended signal range The ADG411, ADG412, and ADG413 are fabricated on an enhanced LC extends fully to the supply rails.

2. Ultralow power dissipation

3. Low R

4. Break-before-make switching This prevents channel shorting when the switches are configured as a multiplexer.

5. Single-supply operation For applications where the analog signal is unipolar, the ADG411, ADG412, and ADG413 can be operated from a single-rail power supply. The parts are fully specified with a single 12 V power supply and remain functional with single supplies as low as 5 V.

MOS, giving an increased signal range which

FUNCTIONAL BLOCK DIAGRAMS

IN1

IN2

ADG411

IN3

IN4

SWITCHES SHOWN FOR A LOGIC 1 INPUT

Rev. C

Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.

Figure 1. ADG411

D1 S2

D2 S3

D3 S4

00024-001

IN1

IN2

IN3

IN4

SWITCHES SHOWN FOR A LOGIC 1 INPUT

Figure 2. ADG412

ADG412

D1 S2

D2 S3

D3 S4

00024-002

www.analog.com

IN1

IN2

ADG413

IN3

IN4

SWITCHES SHOWN FOR A LOGIC 1 INPUT

Figure 3. ADG413

D1 S2

D2 S3

D3 S4

00024-003

ADG411/ADG412/ADG413

TABLE OF CONTENTS

Specifications..................................................................................... 3

Typical Perfor m a n c e C haracter i s t ic s ..............................................7

Dual Supply ................................................................................... 3

Single Supply ................................................................................. 4

Absolute Maximum Ratings............................................................ 5

ESD Caution.................................................................................. 5

Pin Configurations and Function Descriptions ........................... 6

REVISION HISTORY

11/04—Rev. B to Rev. C

Format Updated..................................................................Universal

Change to Package Drawing (Figure 23)..................................... 13

Changes to Ordering Guide.......................................................... 14

7/04—Rev. A to Rev. B

Changes to ORDERING GUIDE .....................................................5

Updated OUTLINE DIMENSIONS ...............................................11

Te r mi n ol o g y .......................................................................................9

Applications..................................................................................... 10

Test C ir c uit s ..................................................................................... 11

Outline Dimensions ....................................................................... 13

Ordering Guide .......................................................................... 14

Rev. C | Page 2 of 16

ADG411/ADG412/ADG413

SPECIFICATIONS

DUAL SUPPLY

VDD = 15 V ± 10%, VSS = –15 V ± 10%, VL = 5 V ± 10%, GND = 0 V, unless otherwise noted.

Table 1.

B Version T Version

Parameter +25°C −40°C to +85°C +25°C −55°C to +125°C Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range VDD to V

25 25 Ω typ VD = ±8.5 V, IS = −10 mA;

to V

35 45 35 45 Ω max VDD = +13.5 V, VSS = −13.5 V LEAKAGE CURRENTS

Source OFF Leakage IS (OFF) ±0.1 ±0.1 nA typ

±0.25 ±0.25 ±0.25 ±20 nA max Figure 15

Drain OFF Leakage ID (OFF) ±0.1 ±0.1 nA typ

±0.25 ±5 ±0.25 ±20 nA max Figure 15

Channel ON Leakage ID, IS (ON) ±0.1 ±0.1 nA typ VD = VS = +15.5 V/−15.5 V; ±0.4 ±10 ±0.4 ± 40 nA max Figure 16 DIGITAL INPUTS

Input High Voltage, V

Input Low Voltage, V

INH

INL

2.4 2.4 V min

0.8 0.8 V max

Input Current

or I

INL

INH

0.005 0.005 µA typ VIN = V ±0.5 ±0.5 µA max DYNAMIC CHARACTERISTICS

110 110 ns typ RL = 300 Ω, CL = 35 pF; 175 175 ns max VS = ±10 V; Figure 17 t

OFF

100 100 ns typ RL = 300 Ω, CL = 35 pF; 145 145 ns max VS = ±10 V; Figure 17 Break-Before-Make Time Delay,

(ADG413 Only)

25 25 ns typ

Charge Injection 5 5 pC typ

OFF Isolation 68 68 dB typ

Channel-to-Channel Crosstalk 85 85 dB typ

CS (OFF) 9 9 pF typ f = 1 MHz CD (OFF) 9 9 pF typ f = 1 MHz CD, CS (ON) 35 35 pF typ f = 1 MHz

POWER REQUIREMENTS

0.0001 0.0001 µA typ 1 5 1 5 µA max I

0.0001 0.0001 µA typ

1 5 1 5 µA max

Temperature ranges are as follows: B versions: −40°C to +85°C; T versions: −55°C to +125°C.

Guaranteed by design; not subject to production test.

VDD = +16.5 V, VSS = −16.5 V

= +15.5 V/−15.5 V,

= −15.5 V/+15.5 V;

= +15.5 V/−15.5 V,

= −15.5 V/+15.5 V;

or V

INL

INH

= 300 Ω, CL = 35 pF;

= VS2 = 10 V; Figure 18

= 0 V, RS = 0 Ω, CL = 10 nF;

Figure 19

= 50 Ω, CL = 5 pF, f = 1 MHz;

Figure 20

= 50 Ω, CL = 5 pF, f = 1 MHz;

Figure 21

= +16.5 V, VSS = −16.5 V;

Digital inputs = 0 V or 5 V

Rev. C | Page 3 of 16

ADG411/ADG412/ADG413

SINGLE SUPPLY

VDD = 12 V ± 10%, VSS = 0 V, VL = 5 V ± 10%, GND = 0 V, unless otherwise noted.

Table 2.

B Version T Version

Parameter +25°C −40°C to + 85°C +25°C −55°C to +125°C Unit Test Conditions/Comments

ANALOG SIGNAL RANGE 0 V to V

40 40 Ω typ 0 < VD = 8.5 V, IS = −10 mA;

0 V to V

80 100 80 100 Ω max VDD = 10.8 V

LEAKAGE CURRENTS VDD = 13.2 V

Source OFF Leakage IS (OFF) ±0.1 ±0.1 nA typ VD = 12.2 V/1 V, VS = 1 V/12.2 V; ±0.25 ±5 ±0.25 ±20 nA max Figure 15 Drain OFF Leakage ID (OFF) ±0.1 ±0.1 nA typ VD = 12.2 V/1 V, VS = 1 V/12.2 V; ±0.25 ±5 ±0.25 ±20 nA max Figure 15

Channel ON Leakage ID, IS (ON) ±0.1 ±0.1 nA typ VD = VS = 12.2 V/1 V; ±0.4 ±10 ±0.4 ±40 nA max Figure 16 DIGITAL INPUTS

Input High Voltage, V

Input Low Voltage, V

INH

INL

2.4 2.4 V min

0.8 0.8 V max

Input Current

or I

INL

INH

0.005 0.005 µA typ VIN = V

±0.5 ±0.5 µA max DYNAMIC CHARACTERISTICS

175 175 ns typ RL = 300 Ω, CL = 35 pF; 250 250 ns max VS = 8 V; Figure 17 t

OFF

95 95 ns typ RL = 300 Ω, CL = 35 pF; 125 125 ns max VS = 8 V; Figure 17 Break-Before-Make Time

Delay, t

(ADG413 Only)

25 25 ns typ

Charge Injection 25 25 pC typ

OFF Isolation 68 68 dB typ

Channel-to-Channel Crosstalk 85 85 dB typ

CS (OFF) 9 9 pF typ f = 1 MHz CD (OFF) 9 9 pF typ f = 1 MHz CD, CS (ON) 35 35 pF typ f = 1 MHz

POWER REQUIREMENTS

0.0001 0.0001 µA typ 1 5 1 5 µA max I

0.0001 0.0001 µA typ 1 5 1 5 µA max VL = 5.25 V

Temperature ranges are as follows: B versions:−40°C to +85°C; T versions: −55°C to +125°C.

Guaranteed by design; not subject to production test.

Table 3. Truth Table (ADG411/ADG412)

ADG411 In ADG412 In Switch Condition

0 1 ON 1 0 OFF

Table 4. Truth Table (ADG413)

Logic Switch 1, 4 Switch 2, 3

0 OFF ON 1 ON OFF

INL

= 300 Ω, CL = 35 pF;

= VS2 = +10 V; Figure 18

= 0 V, RS = 0 Ω, CL = 10 nF;

or V

INH

Figure 19

= 50 Ω, CL = 5 pF, f = 1 MHz;

Figure 20

= 50 Ω, CL = 5 pF, f = 1 MHz;

Figure 21

= 13.2 V;

Digital inputs = 0 V or 5 V

Rev. C | Page 4 of 16

ADG411/ADG412/ADG413

ABSOLUTE MAXIMUM RATINGS

TA = 25°C, unless otherwise noted.

Table 5.

Parameters Ratings

VDD to V

VDD to GND −0.3 V to +25 V VSS to GND +0.3 V to −25 V VL to GND −0.3 V to VDD + 0.3 V Analog, Digital Inputs

Continuous Current, S or D 30 mA Peak Current, S or D (Pulsed at 1 ms,

10% Duty Cycle max)

Operating Temperature Range

Industrial (B Version) −40°C to +85°C

Extended (T Version) −55°C to +125°C Storage Temperature Range −65°C to +150°C Junction Temperature 150°C CERDIP Package, Power Dissipation 900 mW

θJA Thermal Impedance 76°C/W

Lead Temperature, Soldering (10 s) 300°C PDIP, Power Dissipation 470 mW

θJA Thermal Impedance 117°C/W

Lead Temperature, Soldering (10 s) 260°C SOIC Package, Power Dissipation 600 mW

θJA Thermal Impedance 77°C/W TSSOP Package, Power Dissipation 450 mW

θJA Thermal Impedance 115°C/W

θJC Thermal Impedance 35°C/W

Lead Temperature, Soldering

Vapor Phase (60 s) 215°C Infrared (15 s) 220°C

________________________________________

Overvoltages at IN, S, or D are clamped by internal diodes. Current should

be limited to the maximum ratings given.

44 V

VSS − 2 V to VDD + 2 V or 30 mA, whichever occurs first

100 mA

Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Only one absolute maximum rating may be applied at any one time.

ESD CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.

Rev. C | Page 5 of 16

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