Analog Devices ADG411 2 3 c Datasheet

LC2MOS

FEATURES

44 V supply maximum ratings ±15 V analog signal range Low on resistance (< 35 Ω) Ultralow power dissipation (35 µW) Fast switching times
t
< 175 ns
ON
t
< 145 ns
OFF
TTL-/CMOS-compatible Plug-in replacement for DG411/DG412/DG413

APPLICATIONS

Audio and video switching Automatic test equipment Precision data acquisition Battery-powered systems Sample-and-hold systems Communication systems

GENERAL DESCRIPTION

The ADG411, ADG412, and ADG413 are monolithic CMOS devices comprising four independently selectable switches. They are designed on an enhanced LC provides low power dissipation yet gives high switching speed and low on resistance.
The on resistance profile is very flat over the full analog input range ensuring excellent linearity and low distortion when switching audio signals. Fast switching speed coupled with high signal bandwidth also make the parts suitable for video signal switching. CMOS construction ensures ultralow power dissipation, making the parts ideally suited for portable and battery-powered instruments.
2
MOS process which
Precision Quad SPST Switches
ADG411/ADG412/ADG413
The ADG411, ADG412, and ADG413 contain four independent SPST switches. The ADG411 and ADG412 differ only in that the digital control logic is inverted. The ADG411 switches are turned on with a logic low on the appropriate control input, while a logic high is required for the ADG412. The ADG413 has two switches with digital control logic similar to that of the ADG411 while the logic is inverted on the other two switches.
Each switch conducts equally well in both directions when on, and each has an input signal range that extends to the supplies. In the off condition, signal levels up to the supplies are blocked. All switches exhibit break-before-make switching action for use in multiplexer applications. Inherent in the design is low charge injection for minimum transients when switching the digital inputs.

PRODUCT HIGHLIGHTS

1. Extended signal range The ADG411, ADG412, and ADG413 are fabricated on an enhanced LC extends fully to the supply rails.
2. Ultralow power dissipation
3. Low R
4. Break-before-make switching This prevents channel shorting when the switches are configured as a multiplexer.
5. Single-supply operation For applications where the analog signal is unipolar, the ADG411, ADG412, and ADG413 can be operated from a single-rail power supply. The parts are fully specified with a single 12 V power supply and remain functional with single supplies as low as 5 V.
2
MOS, giving an increased signal range which
ON

FUNCTIONAL BLOCK DIAGRAMS

IN1
IN2
ADG411
IN3
IN4
SWITCHES SHOWN FOR A LOGIC 1 INPUT
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.
Figure 1. ADG411
S1
D1 S2
D2 S3
D3 S4
D4
00024-001
IN1
IN2
IN3
IN4
SWITCHES SHOWN FOR A LOGIC 1 INPUT
Figure 2. ADG412
ADG412
S1
D1 S2
D2 S3
D3 S4
D4
00024-002
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 Fax: 781.326.8703 © 2004 Analog Devices, Inc. All rights reserved.
www.analog.com
IN1
IN2
ADG413
IN3
IN4
SWITCHES SHOWN FOR A LOGIC 1 INPUT
Figure 3. ADG413
S1
D1 S2
D2 S3
D3 S4
D4
00024-003
ADG411/ADG412/ADG413
TABLE OF CONTENTS
Specifications..................................................................................... 3
Typical Perfor m a n c e C haracter i s t ic s ..............................................7
Dual Supply ................................................................................... 3
Single Supply ................................................................................. 4
Absolute Maximum Ratings............................................................ 5
ESD Caution.................................................................................. 5
Pin Configurations and Function Descriptions ........................... 6
REVISION HISTORY
11/04—Rev. B to Rev. C
Format Updated..................................................................Universal
Change to Package Drawing (Figure 23)..................................... 13
Changes to Ordering Guide.......................................................... 14
7/04—Rev. A to Rev. B
Changes to ORDERING GUIDE .....................................................5
Updated OUTLINE DIMENSIONS ...............................................11
Te r mi n ol o g y .......................................................................................9
Applications..................................................................................... 10
Test C ir c uit s ..................................................................................... 11
Outline Dimensions ....................................................................... 13
Ordering Guide .......................................................................... 14
Rev. C | Page 2 of 16
ADG411/ADG412/ADG413

SPECIFICATIONS

DUAL SUPPLY

VDD = 15 V ± 10%, VSS = –15 V ± 10%, VL = 5 V ± 10%, GND = 0 V, unless otherwise noted.
Table 1.
B Version T Version
Parameter +25°C −40°C to +85°C +25°C −55°C to +125°C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range VDD to V
R
ON
25 25 typ VD = ±8.5 V, IS = −10 mA;
SS
V
DD
to V
SS
35 45 35 45 max VDD = +13.5 V, VSS = −13.5 V LEAKAGE CURRENTS
Source OFF Leakage IS (OFF) ±0.1 ±0.1 nA typ
±0.25 ±0.25 ±0.25 ±20 nA max Figure 15
Drain OFF Leakage ID (OFF) ±0.1 ±0.1 nA typ
±0.25 ±5 ±0.25 ±20 nA max Figure 15
Channel ON Leakage ID, IS (ON) ±0.1 ±0.1 nA typ VD = VS = +15.5 V/−15.5 V; ±0.4 ±10 ±0.4 ± 40 nA max Figure 16 DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
INH
INL
2.4 2.4 V min
0.8 0.8 V max
Input Current
I
or I
INL
INH
0.005 0.005 µA typ VIN = V ±0.5 ±0.5 µA max DYNAMIC CHARACTERISTICS
t
ON
2
110 110 ns typ RL = 300 Ω, CL = 35 pF; 175 175 ns max VS = ±10 V; Figure 17 t
OFF
100 100 ns typ RL = 300 Ω, CL = 35 pF; 145 145 ns max VS = ±10 V; Figure 17 Break-Before-Make Time Delay,
(ADG413 Only)
t
D
25 25 ns typ
Charge Injection 5 5 pC typ
OFF Isolation 68 68 dB typ
Channel-to-Channel Crosstalk 85 85 dB typ
CS (OFF) 9 9 pF typ f = 1 MHz CD (OFF) 9 9 pF typ f = 1 MHz CD, CS (ON) 35 35 pF typ f = 1 MHz
POWER REQUIREMENTS
I
DD
0.0001 0.0001 µA typ 1 5 1 5 µA max I
SS
0.0001 0.0001 µA typ 1 5 1 5 µA max I
L
0.0001 0.0001 µA typ
1 5 1 5 µA max
1
Temperature ranges are as follows: B versions: −40°C to +85°C; T versions: −55°C to +125°C.
2
Guaranteed by design; not subject to production test.
1
V
VDD = +16.5 V, VSS = −16.5 V
= +15.5 V/−15.5 V,
V
D
V
= −15.5 V/+15.5 V;
S
= +15.5 V/−15.5 V,
V
D
= −15.5 V/+15.5 V;
V
S
or V
INL
INH
= 300 Ω, CL = 35 pF;
R
L
= VS2 = 10 V; Figure 18
V
S1
= 0 V, RS = 0 Ω, CL = 10 nF;
V
S
Figure 19
= 50 Ω, CL = 5 pF, f = 1 MHz;
R
L
Figure 20
= 50 Ω, CL = 5 pF, f = 1 MHz;
R
L
Figure 21
= +16.5 V, VSS = −16.5 V;
V
DD
Digital inputs = 0 V or 5 V
Rev. C | Page 3 of 16
ADG411/ADG412/ADG413

SINGLE SUPPLY

VDD = 12 V ± 10%, VSS = 0 V, VL = 5 V ± 10%, GND = 0 V, unless otherwise noted.
Table 2.
B Version T Version
Parameter +25°C −40°C to + 85°C +25°C −55°C to +125°C Unit Test Conditions/Comments
ANALOG SIGNAL RANGE 0 V to V
R
ON
40 40 typ 0 < VD = 8.5 V, IS = −10 mA;
DD
0 V to V
80 100 80 100 max VDD = 10.8 V
LEAKAGE CURRENTS VDD = 13.2 V
Source OFF Leakage IS (OFF) ±0.1 ±0.1 nA typ VD = 12.2 V/1 V, VS = 1 V/12.2 V; ±0.25 ±5 ±0.25 ±20 nA max Figure 15 Drain OFF Leakage ID (OFF) ±0.1 ±0.1 nA typ VD = 12.2 V/1 V, VS = 1 V/12.2 V; ±0.25 ±5 ±0.25 ±20 nA max Figure 15
Channel ON Leakage ID, IS (ON) ±0.1 ±0.1 nA typ VD = VS = 12.2 V/1 V; ±0.4 ±10 ±0.4 ±40 nA max Figure 16 DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
INH
INL
2.4 2.4 V min
0.8 0.8 V max
Input Current
I
or I
INL
INH
0.005 0.005 µA typ VIN = V
±0.5 ±0.5 µA max DYNAMIC CHARACTERISTICS
t
ON
2
175 175 ns typ RL = 300 Ω, CL = 35 pF; 250 250 ns max VS = 8 V; Figure 17 t
OFF
95 95 ns typ RL = 300 Ω, CL = 35 pF; 125 125 ns max VS = 8 V; Figure 17 Break-Before-Make Time
Delay, t
(ADG413 Only)
D
25 25 ns typ
Charge Injection 25 25 pC typ
OFF Isolation 68 68 dB typ
Channel-to-Channel Crosstalk 85 85 dB typ
CS (OFF) 9 9 pF typ f = 1 MHz CD (OFF) 9 9 pF typ f = 1 MHz CD, CS (ON) 35 35 pF typ f = 1 MHz
POWER REQUIREMENTS
I
DD
0.0001 0.0001 µA typ 1 5 1 5 µA max I
L
0.0001 0.0001 µA typ 1 5 1 5 µA max VL = 5.25 V
1
Temperature ranges are as follows: B versions:−40°C to +85°C; T versions: −55°C to +125°C.
2
Guaranteed by design; not subject to production test.
Table 3. Truth Table (ADG411/ADG412)
ADG411 In ADG412 In Switch Condition
0 1 ON 1 0 OFF
Table 4. Truth Table (ADG413)
Logic Switch 1, 4 Switch 2, 3
0 OFF ON 1 ON OFF
1
DD
V
INL
= 300 Ω, CL = 35 pF;
R
L
= VS2 = +10 V; Figure 18
V
S1
= 0 V, RS = 0 Ω, CL = 10 nF;
V
S
or V
INH
Figure 19
= 50 Ω, CL = 5 pF, f = 1 MHz;
R
L
Figure 20
= 50 Ω, CL = 5 pF, f = 1 MHz;
R
L
Figure 21
= 13.2 V;
V
DD
Digital inputs = 0 V or 5 V
Rev. C | Page 4 of 16
ADG411/ADG412/ADG413

ABSOLUTE MAXIMUM RATINGS

TA = 25°C, unless otherwise noted.
Table 5.
Parameters Ratings
VDD to V
SS
VDD to GND −0.3 V to +25 V VSS to GND +0.3 V to −25 V VL to GND −0.3 V to VDD + 0.3 V Analog, Digital Inputs
Continuous Current, S or D 30 mA Peak Current, S or D (Pulsed at 1 ms,
10% Duty Cycle max)
Operating Temperature Range
Industrial (B Version) −40°C to +85°C
Extended (T Version) −55°C to +125°C Storage Temperature Range −65°C to +150°C Junction Temperature 150°C CERDIP Package, Power Dissipation 900 mW
θJA Thermal Impedance 76°C/W
Lead Temperature, Soldering (10 s) 300°C PDIP, Power Dissipation 470 mW
θJA Thermal Impedance 117°C/W
Lead Temperature, Soldering (10 s) 260°C SOIC Package, Power Dissipation 600 mW
θJA Thermal Impedance 77°C/W TSSOP Package, Power Dissipation 450 mW
θJA Thermal Impedance 115°C/W
θJC Thermal Impedance 35°C/W
Lead Temperature, Soldering
Vapor Phase (60 s) 215°C Infrared (15 s) 220°C
________________________________________
1
Overvoltages at IN, S, or D are clamped by internal diodes. Current should
be limited to the maximum ratings given.
1
44 V
VSS − 2 V to VDD + 2 V or 30 mA, whichever occurs first
100 mA
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Only one absolute maximum rating may be applied at any one time.

ESD CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
Rev. C | Page 5 of 16
ADG411/ADG412/ADG413

PIN CONFIGURATION AND FUNCTION DESCRIPTIONS

IN1
V
GND
IN4
D1 S1
SS
S4 D4
1
2
ADG411/
3
ADG412/
ADG413
4
TOP VIEW
5
(Not to Scale)
6
7
8
16
IN2
15
D2
14
S2
13
V
DD
12
V
L
11
S3
10
D3
9
IN3
Figure 4. Pin Configuration
Table 6. Pin Function Descriptions
Pin No. Mnemonic Description
1, 8, 9, 16 IN1–IN4 Logic Control Input. 2, 7, 10, 15 D1–D4 Drain Terminal. Can be an input or output. 3, 6, 11, 14 S1–S4 Source Terminal. Can be an input or output. 4 V
SS
Most Negative Power Supply Potential in Dual Supplies. In single supply applications, it may be
connected to GND. 5 GND Ground (0 V) Reference. 12 V 13 V
L
DD
Logic Power Supply (5 V).
Most Positive Power Supply Potential.
00024-004
Rev. C | Page 6 of 16
ADG411/ADG412/ADG413

TYPICAL PERFORMANCE CHARACTERISTICS

50
40
V
= +5V
DD
= –5V
V
30
V
= +10V
(Ω)
ON
R
DD
V
= –10V
SS
20
SS
V V
T
A
V
L
DD SS
= 25°C = +5V
= +12V = –12V
50
VDD = +5V
40
V
= 0V
SS
V
= +10V
DD
= 0V
V
30
)
(
ON
R
20
SS
V V
DD SS
= +12V = 0V
T
A
V
L
= 25°C = +5V
10
V
= +15V
DD
= –15V
V
SS
0 –20 20
Figure 5. On Resistance as a Function of V
VD OR VS– DRAIN OR SOURCE VOLTAGE (V)
D
50
40
30
(Ω)
ON
R
20
10
0 –20 –15 –10 –5 0 5 10 15 20
Figure 6. On Resistance as a Function of V
VD OR VS– DRAIN OR SOURCE VOLTAGE (V)
(VS) for Different Temperatures
D
10
VDD = +15V V
= –15V
SS
= +5V
V
L
1
= ±15V
V
0.1
0.01
LEAKAGE CURRENT (nA)
D
V
S
= ±15V
I
S
(OFF)
(ON)
I
D
ID (OFF)
100–10
(VS) Dual Supplies
VDD = +15V
= –15V
V
SS
V
= +5V
L
125°C 85°C 25°C
00024-005
00024-006
10
= +15V
V
DD
= 0V
V
SS
0
02
VD OR VS– DRAIN OR SOURCE VOLTAGE (V)
Figure 8. On Resistance as a Function of V
15105
(VS) Single Supply
D
00024-008
0
100m
VDD = +15V
= –15V
V
SS
= +5V
V
L
10m
1m
(A)
100µ
SUPPLY
I
10µ
1µ
100n
10 100 1k 10k 100k 1M 10M
4 SW 1 SW
FREQUENCY (Hz)
I+, I–
I
L
00024-009
Figure 9. Supply Current vs. Input Switching Frequency
0.04 VDD = +15V
= –15V
V
0.02
–0.02
LEAKAGE CURRENT (nA)
SS
T
= 25°C
A
= +5V
V
L
0
I
D
I
D
(ON)
(OFF)
I
S
(OFF)
0.001 100 1k 10k 100k 1M 100M
FREQUENCY (Hz)
Figure 7. Leakage Currents as a Function of Temperature
00024-007
Rev. C | Page 7 of 16
–0.04
–20 20100–10
VD OR VS– DRAIN OR SOURCE VOLTAGE (V)
Figure 10. Leakage Currents as a Function of V
(VS)
D
00024-010
ADG411/ADG412/ADG413
120
100
80
OFF ISOLATION (dB)
60
VDD = +15V
= –15V
V
SS
V
= +5V
L
110
100
90
80
CROSSTALK (dB)
70
VDD = +15V
= –15V
V
SS
= +5V
V
L
40
100 10M1M100k10k1k
FREQUENCY (Hz)
Figure 11. Off Isolation vs. Frequency
00024-011
60
100 10M1M100k10k1k
FREQUENCY (Hz)
Figure 12. Cross talk vs. Frequency
00024-012
Rev. C | Page 8 of 16
ADG411/ADG412/ADG413

TERMINOLOGY

R
ON
t
ON
Ohmic resistance between D and S.
(OFF)
I
S
Source leakage current with the switch OFF.
(OFF)
I
D
Drain leakage current with the switch OFF.
, IS (ON)
I
D
Channel leakage current with the switch ON.
(VS)
V
D
Analog voltage on terminals D, S.
(OFF)
C
S
OFF switch source capacitance.
(OFF)
C
D
OFF switch drain capacitance.
, CS (ON)
C
D
ON switch capacitance.
Delay between applying the digital control input and the output switching on.
t
OFF
Delay between applying the digital control input and the output switching off.
t
D
OFF time or ON time measured between the 90% points of both switches, when switching from one address state to another.
Crosstalk
A measure of unwanted signal which is coupled through from one channel to another as a result of parasitic capacitance.
Off Isolation
A measure of unwanted signal coupling through an OFF switch.
Charge Injection
A measure of the glitch impulse transferred from the digital input to the analog output during switching.
Rev. C | Page 9 of 16
ADG411/ADG412/ADG413

APPLICATIONS

Figure 13 illustrates a precise, fast, sample-and-hold circuit. An AD845 is used as the input buffer while the output operational amplifier is an AD711. During the track mode, SW1 is closed and the output V mode, SW1 is opened and the signal is held by the hold capacitor C
H
Due to switch and capacitor leakage, the voltage on the hold capacitor decreases with time. The ADG411/ADG412/ADG413 minimizes this droop due to its low leakage specifications. The droop rate is further minimized by the use of a polystyrene hold capacitor. The droop rate for the circuit shown is typically 30 µV/µs.
A second switch, SW2, which operates in parallel with SW1, is included in this circuit to reduce pedestal error. Since both switches are at the same potential, they have a differential effect on the op amp AD711, which minimizes charge injection effects. Pedestal error is also reduced by the compensation network R
and CC. This compensation network also reduces
C
follows the input signal VIN. In the hold
OUT
.
the hold time glitch while optimizing the acquisition time. Using the illustrated op amps and component values, the pedestal error has a maximum value of 5 mV over the ±10 V input range. Both the acquisition and settling times are 850 ns.
+15V +5V
+15V
V
IN
AD845
–15V
SW1
S
SW2
S
ADG411 ADG412 ADG413
–15V
Figure 13. Fast, Accurate Sample-and-Hold
2200pF
+15V
D
D
C
C
R
C
75
2200pF
1000pF
C
H
AD711
–15V
V
OUT
00024-013
Rev. C | Page 10 of 16
ADG411/ADG412/ADG413

TEST CIRCUITS

I
DS
V1
SD
IS (OFF) ID (OFF)
SD
A A
SD
ID (ON)
A
V
S
RON = V1/I
DS
Figure 14. On Resistance
00024-014
V
S
V
D
00024-015
Figure 15. Off Leakage
V
S
Figure 16. On Leakage
V
D
00024-016
+15V +5V
0.1µF 0.1µF 3V
V
DDVL
S
D
R
V
S
IN
V
GND
SS
0.1µF –15V
L
300
C
L
35pF
V
OUT
V
ADG411
IN
V
IN
ADG412
V
OUT
50% 50%
3V
50% 50%
90% 90%
t
ON
t
OFF
00024-017
Figure 17. Switching Times
+15V +5V
0.1µF 0.1µF
V
DDVL
V
V
S1 D1
S1
S2
S2
IN1, IN2
V
IN
GND
0.1µF
V
–15V
D2
R
C
L2
300
35pF
SS
V
L2
OUT2
R
L1
300
C
L1
35pF
V
OUT1
Figure 18. Break-Before-Make Time Delay
V
V
V
OUT1
OUT2
3V
IN
0V
0V
0V
50% 50%
90%
90%
t
D
t
90%
D
90%
00024-018
Rev. C | Page 11 of 16
ADG411/ADG412/ADG413
V
V
R
S
V
S
+15V +5V
V
IN
GND
DDVL
SD
V
SS
–15V
C
L
10nF
3V
V
OUT
V
IN
V
OUT
Q
INJ
= CL× ∆V
OUT
V
OUT
00024-019
Figure 19. Charge Injection
+15V +5V
F 0.1µF
0.1µ
V
DDVL
SD
IN
V
S
IN
V
GND
SS
0.1µF –15V
V
OUT
R
L
50
00024-020
OUT
V
S
R
L
50
Figure 20. Off Isolation
+15V +5V
0.1µF 0.1µF
V
DDVL
S
D
V
IN1
S
D
V
GND
0.1µF
SS
CHANNEL-TO-CHANNEL CROSSTALK = 20 × LOG V
–15V
50
V
IN2
Figure 21. Channel-to-Channel Crosstalk
NC
S/VOUT
00024-021
Rev. C | Page 12 of 16
ADG411/ADG412/ADG413

OUTLINE DIMENSIONS

0.005
(0.13)
MIN
PIN 1
0.200 (5.08) MAX
0.200 (5.08)
0.125 (3.18)
0.023 (0.58)
0.014 (0.36)
CONTROLLING DIMENSIONS ARE IN INCHES; MILLIMETER DIMENSIONS (IN PARENTHESES) ARE ROUNDED-OFF INCH EQUIVALENTS FOR REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN
0.098 (2.49) MAX
16
1
0.840 (21.34) MAX
0.100
0.070 (1.78)
(2.54)
0.030 (0.76)
BSC
9
8
0.310 (7.87)
0.220 (5.59)
0.060 (1.52)
0.015 (0.38)
0.150 (3.81) MIN
SEATING PLANE
15°
Figure 22. 16-Lead Ceramic Dual In-Line Package [CERDIP]
(Q-16)
Dimensions shown in inches and (millimeters)
10.00 (0.3937)
9.80 (0.3858)
4.00 (0.1575)
3.80 (0.1496)
0.25 (0.0098)
0.10 (0.0039)
COPLANARITY
CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS (IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN
16
1
1.27 (0.0500) BSC
0.51 (0.0201)
0.10
0.31 (0.0122)
COMPLIANT TO JEDEC STANDARDS MS-012AC
9
6.20 (0.2441)
5.80 (0.2283)
8
1.75 (0.0689)
1.35 (0.0531)
SEATING PLANE
0.25 (0.0098)
0.17 (0.0067)
0.50 (0.0197)
0.25 (0.0098)
8° 0°
1.27 (0.0500)
0.40 (0.0157)
Figure 23. 16-Lead Standard Small Outline Package [SOIC]
Narrow Body
(R-16)
Dimensions shown in millimeters and (inches)
0.320 (8.13)
0.290 (7.37)
0.015 (0.38)
0.008 (0.20)
× 45°
4.50
4.40
4.30
PIN 1
0.15
0.05
0.65
BSC
Figure 24. 16-Lead Thin Shrink Small Outline Package [TSSOP]
0.180 (4.57)
0.150 (3.81)
0.130 (3.30)
0.110 (2.79)
CONTROLLING DIMENSIONS ARE IN INCHES; MILLIMETER DIMENSIONS (IN PARENTHESES) ARE ROUNDED-OFF INCH EQUIVALENTS FOR REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN
5.10
5.00
4.90
16
COPLANARITY
COMPLIANT TO JEDEC STANDARDS MO-153AB
0.10
0.30
0.19
9
81
1.20 MAX
SEATING PLANE
6.40
BSC
0.20
0.09 8°
(RU-16)
Dimensions shown in millimeters
0.785 (19.94)
0.765 (19.43)
0.745 (18.92)
16 1
0.100 (2.54) BSC
0.015 (0.38)
MAX
0.022 (0.56)
0.018 (0.46)
0.014 (0.36)
COMPLIANT TO JEDEC STANDARDS MO-095AC
0.060 (1.52)
0.050 (1.27)
0.045 (1.14)
9 8
MIN
0.295 (7.49)
0.285 (7.24)
0.275 (6.99)
SEATING PLANE
0.325 (8.26)
0.310 (7.87)
0.300 (7.62)
0.015 (0.38)
0.010 (0.25)
0.008 (0.20)
Figure 25. 16-Lead Plastic Dual In-Line Package [PDIP]
(N-16)
Dimensions shown in inches and (millimeters)
0.75
0.60
0.45
0.150 (3.81)
0.135 (3.43)
0.120 (3.05)
Rev. C | Page 13 of 16
ADG411/ADG412/ADG413

ORDERING GUIDE

Model Temperature Range Package Description Package Option
ADG411BN −40°C to +85°C P-DIP N-16 ADG411BR −40°C to +85°C SOIC R-16A ADG411BR-REEL −40°C to +85°C SOIC R-16A ADG411BR-REEL7 −40°C to +85°C SOIC R-16A ADG411BRZ ADG411BRZ-REEL ADG411BRZ-REEL7 ADG411BRU −40°C to +85°C TSSOP RU-16 ADG411BRU-REEL −40°C to +85°C TSSOP RU-16 ADG411BRU-REEL7 −40°C to +85°C TSSOP RU-16 ADG411BRUZ ADG411BRUZ-REEL ADG411BRUZ-REEL7 ADG411TQ −55°C to +125°C CERDIP Q-16 ADG411BCHIPS DIE ADG412BN −40°C to +85°C P-DIP N-16 ADG412BR −40°C to +85°C SOIC R-16A ADG412BR-REEL −40°C to +85°C SOIC R-16A ADG412BR-REEL7 −40°C to +85°C SOIC R-16A ADG412BRZ ADG412BRZ-REEL ADG412BRZ-REEL7 ADG412BRU −40°C to +85°C TSSOP RU-16 ADG412BRU-REEL −40°C to +85°C TSSOP RU-16 ADG412BRU-REEL7 −40°C to +85°C TSSOP RU-16 ADG412BRUZ ADG412BRUZ-REEL ADG412BRUZ-REEL7 ADG412TQ −55°C to +125°C CERDIP Q-16 ADG412TCHIPS DIE ADG413BN −40°C to +85°C P-DIP N-16 ADG413BR −40°C to +85°C SOIC R-16A ADG413BR-REEL −40°C to +85°C SOIC R-16A ADG413BRZ ADG413BRZ-REEL ADG413BRUZ ADG413BRUZ-500RL7 ADG413BRUZ-REEL ADG413BRUZ-REEL7
1
Z = Pb-free part.
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
−40°C to +85°C SOIC R-16A
−40°C to +85°C SOIC R-16A
−40°C to +85°C SOIC R-16A
−40°C to +85°C TSSOP RU-16
−40°C to +85°C TSSOP RU-16
−40°C to +85°C TSSOP RU-16
−40°C to +85°C SOIC R-16A
−40°C to +85°C SOIC R-16A
−40°C to +85°C SOIC R-16A
−40°C to +85°C TSSOP RU-16
−40°C to +85°C TSSOP RU-16
−40°C to +85°C TSSOP RU-16
−40°C to +85°C SOIC R-16A
−40°C to +85°C SOIC R-16A
−40°C to +85°C TSSOP RU-16
−40°C to +85°C TSSOP RU-16
−40°C to +85°C TSSOP RU-16
−40°C to +85°C TSSOP RU-16
Rev. C | Page 14 of 16
ADG411/ADG412/ADG413
NOTES
Rev. C | Page 15 of 16
ADG411/ADG412/ADG413
NOTES
© 2004 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners.
C00024–0–11/04(C)
Rev. C | Page 16 of 16
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