Low on resistance (100 Ω maximum)
Low power (I
Fast switching
Break-before-make switching action
Plug-in replacement for DG408/DG409
APPLICATIONS
Audio and video routing
Automatic test equipment
Data acquisition systems
Battery-powered systems
Sample-and-hold systems
Communication systems
GENERAL DESCRIPTION
The ADG408/ADG409 are monolithic CMOS analog multiplexers
comprising eight single channels and four differential channels,
respectively. The ADG408 switches one of eight inputs to a
common output as determined by the 3-bit binary address lines
A0, A1, and A2. The ADG409 switches one of four differential
inputs to a common differential output, as determined by the
2-bit binary address lines A0 and A1. An EN input on both devices
is used to enable or disable the device. When the device is disabled,
all channels are switched off.
The ADG408/ADG409 are designed on an enhanced LC
process that provides low power dissipation yet gives high
switching speed and low on resistance. Each channel conducts
equally well in both directions when on and has an input signal
range that extends to the supplies. In the off condition, signal
levels up to the supplies are blocked. All channels exhibit breakbefore-make switching action, preventing momentary shorting
when switching channels. Inherent in the design is low
charge injection for minimum transients when switching the
digital inputs.
SUPPLY
< 75 μA)
2
MOS
ADG408/ADG409
FUNCTIONAL BLOCK DIAGRAMS
ADG408
S1
S8
1-OF-8
DECODER
S1A
S4A
D
S1B
S4B
Figure 1.
PRODUCT HIGHLIGHTS
1. Extended Signal Range. The ADG408/ADG409 are
fabricated on an enhanced LC
increased signal range that extends to the supply rails.
2. Low Power Dissipation.
3. Low R
4. Single-Supply Operation. For applications where the
analog signal is unipolar, the ADG408/ADG409 can be
operated from a single rail power supply. The parts are
fully specified with a single 12 V power supply and remain
functional with single supplies as low as 5 V.
ON
.
ADG409
1-OF-4
DECODER
A0 A1 E NA0 A1 A2 EN
2
MOS process, giving an
DA
DB
00027-001
The ADG408/ADG409 are improved replacements for the
DG408/DG409 analog multiplexers.
Rev. C
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Anal og Devices for its use, nor for any infringements of patents or ot her
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
Analog Signal Range VSS to VDD VSS to VDD V
RON 40 40 Ω typ
100 125 100 125 Ω max
∆RON 15 15 Ω max
LEAKAGE CURRENTS
Source Off Leakage IS (OFF) ±0.5 ±50 ±0.5 ±50 nA max VD = ±10 V, VS = 10 V; see mFigure 19
Drain Off Leakage ID (OFF) VD = ±10 V; VS = 10 V; see mFigure 20
ADG408 ±1 ±100 ±1 ±100 nA max
ADG409 ±1 ±50 ±1 ±50 nA max
Channel On Leakage ID, IS (ON) VS = VD = ±10 V; see Figure 21
ADG408 ±1 ±100 ±1 ±100 nA max
ADG409 ±1 ±50 ±1 ±50 nA max
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
2.4 2.4 V min
INH
0.8 0.8 V max
INL
Input Current
I
or I
±10 ±10 μA max VIN = 0 or VDD
INL
INH
CIN, Digital Input Capacitance 8 8 pF typ f = 1 MHz
DYNAMIC CHARACTERISTICS
t
120 120 ns typ RL = 300 Ω, CL = 35 pF;
TRANSITION
1
250 250 ns max VS1 = ±10 V, VS8 = 10 V; see mFigure 22
t
10 10 10 10 ns min RL = 300 Ω, CL = 35 pF;
OPEN
V
tON (EN) 85 125 85 125 ns typ RL = 300 Ω CL = 35 pF;
150 225 150 225 ns max VS = 5 V; see Figure 24
t
(EN) 65 65 ns typ RL = 300 Ω, CL = 35 pF;
OFF
150 150 ns max VS = 5 V; see Figure 24
Charge Injection 20 20 pC typ VS = 0 V, RS = 0 Ω, CL = 10 nF; see Figure 25
OFF Isolation
−75
−75
V
Channel-to-Channel Crosstalk 85 85 dB typ RL = 1 kΩ, f = 100 kHz; see Figure 27
CS (OFF) 11 11 pF typ f = 1 MHz
CD (OFF) f = 1 MHz
ADG408 40 40 pF typ
ADG409 20 20 pF typ
CD, CS (ON) f = 1 MHz
ADG408 54 54 pF typ
ADG409 34 34 pF typ
−55ºC to
+125ºC
Unit Test Conditions/Comments
V
= ±10 V, IS = −10 mA
D
V
= +10 V, −10 V
D
= 5 V; see Figure 23
S
dB typ RL = 1 kΩ, f = 100 kHz;
= 0 V; see Figure 26
EN
Rev. C | Page 3 of 16
ADG408/ADG409
B Version T Version
−40ºC to
Parameter +25ºC
+85ºC
+25ºC
POWER REQUIREMENTS
IDD 1 1 μA typ VIN = 0 V, VEN = 0 V
5 5 μA max
ISS 1 1 μA typ
5 5 μA max
IDD 100 100 μA typ VIN = 0 V, VEN = 2.4 V
200 500 200 500 μA max
1
Guaranteed by design, not subject to production test.
Analog Signal Range 0 to VDD 0 to VDD V
RON 90 90 Ω typ VD = 3 V, 10 V, IS = –1 mA
LEAKAGE CURRENTS
Source Off Leakage IS (OFF) ±0.5 ±50 ±0.5 ±50 nA max VD = 8 V/0 V, VS = 0 V/8 V; see Figure 19
Drain Off Leakage ID (OFF) VD = 8 V/0 V, VS = 0 V/8 V; see Figure 20
ADG408 ±1 ±100 ±1 ±100 nA max
ADG409 ±1 ±50 ±1 ±50 nA max
Channel On Leakage ID, IS (ON) VS = VD = 8 V/0 V; see Figure 21
ADG408 ±1 ±100 ±1 ±100 nA max
ADG409 ±1 ±50 ±1 ±50 nA max
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
2.4 2.4 V min
INH
0.8 0.8 V max
INL
Input Current
I
or I
±10 ±10 μA max VIN = 0 or VDD
INL
INH
C
Digital Input Capacitance 8 8 pF typ f = 1 MHz
IN,
DYNAMIC CHARACTERISTICS
t
130 130 ns typ RL = 300 Ω, CL = 35 pF;
TRANSITION
1
V
t
OPEN
10 10 ns typ
V
tON (EN) 140 140 ns typ RL = 300 Ω CL = 35 pF;
V
t
(EN) 60 60 ns typ RL = 300 Ω, CL = 35 pF;
OFF
V
Charge Injection 5 5 pC typ VS = 0 V, RS = 0Ω, CL = 10 nF; see Figure 25
Off Isolation –75 –75 dB typ RL = 1 kΩ f = 100 kHz;
V
+25°C
−55ºC to
+125ºC
−55ºC to
+125ºC
Unit Test Conditions/Comments
Unit Test Conditions/Comments
= 8 V/0 V, VS8 = 0 V/8 V; see Figure 22
S1
RL = 300 Ω, CL = 35 pF;
= 5 V; see Figure 23
S
= 5 V; see Figure 24
S
= 5 V; see Figure 24
S
= 0 V; see Figure 26
EN
Rev. C | Page 4 of 16
ADG408/ADG409
B Version T Version
−40ºC to
Parameter +25ºC
+85ºC
+25°C
Channel-to-Channel Crosstalk 85 85 dB typ RL = 1 kΩ, f = 100 kHz; see Figure 27
CS (OFF) 11 11 pF typ f = 1 MHz
CD (OFF) f = 1 MHz
ADG408 40 40 pF typ
ADG409 20 20 pF typ
CD, CS (ON) f = 1 MHz
ADG408 54 54 pF typ
ADG409 34 34 pF typ
POWER REQUIREMENTS
IDD 1 1 μA typ VIN = 0 V, VEN = 0 V
5 5 μA max
IDD 100 100 μA typ VIN = 0 V, VEN = 2.4 V
200 500 200 500 μA max
1
Guaranteed by design, not subject to production test.
−55ºC to
+125ºC
Unit Test Conditions/Comments
Rev. C | Page 5 of 16
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