Analog Devices ADG333ABRS, ADG333ABR, ADG333ABN Datasheet

S1A
D1
S1B
IN1
IN2
S2B
D2
S2A
S3A
D3
S3B
IN3
IN4
S4B
D2
S4A
ADG333A
SWITCHES SHOWN FOR A LOGIC “1” INPUT
a
Quad SPDT Switch
ADG333A
FEATURES 44 V Supply Maximum Ratings VSS to VDD Analog Signal Range Low On Resistance (45 V max) Low R Low R
(5 V max)
ON
Match (4 V max)
ON
Low Power Dissipation Fast Switching Times
< 175 ns
t
ON
< 145 ns
t
OFF
Low Leakage Currents (5 nA max) Low Charge Injection (10 pC max) Break-Before-Make Switching Action
APPLICATIONS Audio and Video Switching Battery Powered Systems Test Equipment Communication Systems
GENERAL DESCRIPTION
The ADG333A is a monolithic CMOS device comprising four independently selectable SPDT switches. It is designed on an
2
LC
MOS process which provides low power dissipation yet
achieves a high switching speed and a low on resistance. The on resistance profile is very flat over the full analog input
range ensuring good linearity and low distortion when switching audio signals. High switching speed also makes the part suitable for video signal switching. CMOS construction ensures ultralow power dissipation making the part ideally suited for portable, battery powered instruments.
When they are ON, each switch conducts equally well in both directions and has an input signal range which extends to the power supplies. In the OFF condition, signal levels up to the supplies are blocked. All switches exhibit break-before-make switching action for use in multiplexer applications. Inherent in the design is low charge injection for minimum transients when switching the digital inputs.

FUNCTIONAL BLOCK DIAGRAM

PRODUCT HIGHLIGHTS

1. Extended Signal Range The ADG333A is fabricated on an enhanced LC
2
MOS process, giving an increased signal range which extends to the supply rails.
2. Low Power Dissipation
3. Low R
ON
4. Single Supply Operation For applications where the analog signal is unipolar, the ADG333A can be operated from a single rail power supply. The part is fully specified with a single +12 V supply.
REV. 0
© Analog Devices, Inc., 1995
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 617/329-4700 Fax: 617/326-8703
ADG333A–SPECIFICA TIONS
1
DUAL SUPPLY
(VDD = +15 V, VSS = –15 V, GND = 0 V, unless otherwise noted)
–408C to
Parameter +258C +858C Units Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range V R
ON
20 typ VD = ±10 V, IS = –1 mA
SS
to V
DD
V
45 45 max
R
ON
5 max VD = ±5 V, IS = –10 mA
RON Match 4 max VD = ±10 V, IS = –10 mA
LEAKAGE CURRENTS V
Source OFF Leakage I
(OFF) ±0.1 nA typ VD = ±15.5 V, VS = +15.5 V
S
= +16.5 V, VSS = –16.5 V
DD
±0.25 ±3 nA max Test Circuit 2
Channel ON Leakage I
, IS (ON) ±0.1 nA typ VS = VD = ±15.5 V
D
±0.4 ±5 nA max Test Circuit 3
DIGITAL INPUTS
Input High Voltage, V Input Low Voltage, V
INL
INH
2.4 V min
0.8 V max Input Current I
INL
or I
INH
±0.005 µA typ VIN = 0 V or V
DD
±0.5 µA max
OPEN
2
90 ns typ RL = 300 , CL = 35 pF;
175 ns max V
= ±10 V; Test Circuit 4
S
80 ns typ RL = 300 , CL = 35 pF;
145 ns max V
= ±10 V; Test Circuit 4
S
10 ns min RL = 300 , CL = 35 pF;
V
= +5 V; Test Circuit 5
S
= 0 V, RD = 0 , CL = 10 nF;
10 pC max V
D
= +15 V, VSS = –15 V; Test Circuit 6
DD
= 75 , CL = 5 pF, f = 1 MHz;
L
V
= 2.3 V rms, Test Circuit 7
S
= 75 , CL = 5 pF, f = 1 MHz;
L
V
= 2.3 V rms, Test Circuit 8
S
DYNAMIC CHARACTERISTICS
t
ON
t
OFF
Break-Before-Make Delay, t Charge Injection 2 pC typ V OFF Isolation 72 dB typ R Channel-to-Channel Crosstalk 85 dB typ R C
(OFF) 5 pF typ
S
CD, CS (ON) 20 pF typ
POWER REQUIREMENTS
I
DD
0.05 mA typ Digital Inputs = 0 V or 5 V
0.25 0.35 mA max
I
SS
0.01 µA typ 15µA max
VDD/V
SS
NOTES
1
Temperature range is as follows: B Version: –40°C to +85 °C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
±3/±20 V min/V max |VDD| = |VSS|
–2–
REV. 0
ADG333A

SINGLE SUPPLY

(VDD = +12 V, VSS = 0 V 6 10%, GND = 0 V, unless otherwise noted)
–408C to
Parameter +258C +858C Units Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 to V R
ON
35 typ VD = +1 V, +10 V, IS = –1 mA
DD
V
75 max
LEAKAGE CURRENTS V
Source OFF Leakage I
(OFF) ±0.1 nA typ VD = 12.2 V/1 V, VS = 1 V/12.2 V
S
= +13.2 V
DD
±0.25 ±3 nA max Test Circuit 2
Channel ON Leakage I
, IS (ON) ±0.1 nA typ VS = VD = 12.2 V/1 V
D
±0.4 ±5 nA max Test Circuit 3
DIGITAL INPUTS
Input High Voltage, V Input Low Voltage, V
INL
INH
2.4 V min
0.8 V max Input Current I
INL
or I
INH
±0.005 µA typ VIN = 0 V or V
DD
±0.5 µA max
OPEN
2
110 ns typ RL = 300 , CL = 35 pF;
200 ns max V
= +8 V; Test Circuit 4
S
100 ns typ RL = 300 , CL = 35 pF;
180 ns max V
= +8 V; Test Circuit 4
S
10 ns min RL = 300 , CL = 35 pF;
ns min V
= +5 V; Test Circuit 5
S
= 6 V, RD = 0 , CL = 10 nF;
D
V
= +12 V, VSS = –0 V; Test Circuit 6
DD
= 75 , CL = 5 pF, f = 1 MHz;
L
V
= 1.15 V rms, Test Circuit 7
S
= 75 , CL = 5 pF, f = 1 MHz;
L
V
= 1.15 V rms, Test Circuit 8
S
DYNAMIC CHARACTERISTICS
t
ON
t
OFF
Break-Before-Make Delay, t Charge Injection 5 pC typ V OFF Isolation 72 dB typ R Channel-to-Channel Crosstalk 85 dB typ R C
(OFF) 5 pF typ
S
CD, CS (ON) 20 pF typ
POWER REQUIREMENTS V
I
DD
0.05 mA typ Digital Inputs = 0 V or 5 V
0.25 0.35 mA max
V
DD
NOTES
1
Temperature range is as follows: B Version: –40°C to +85 °C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
REV. 0
+3/+30 V min/V max
–3–
= +13.5 V
DD
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