Low on resistance (45 Ω max)
Low ∆R
Low R
Low power dissipation
Fast switching times
Low leakage currents (5 nA max)
Low charge injection (10 pC max)
Break-before-make switching action
APPLICATIONS
Audio and video switching
Battery-powered systems
Test equipment
Communication systems
GENERAL DESCRIPTION
The ADG333A is a monolithic CMOS device comprising four
independently selectable SPDT switches. It is designed on an
LC
achieves a high switching speed and a low on resistance.
The on resistance profile is very flat over the full analog input
range, ensuring good linearity and low distortion when
switching audio signals. High switching speed also makes the
part suitable for video signal switching. CMOS construction
ensures ultralow power dissipation, making the part ideally
suited for portable, battery-powered instruments.
When they are on, each switch conducts equally well in both
directions and has an input signal range that extends to the
power supplies. In the off condition, signal levels up to the
supplies are blocked. All switches exhibit break-before-make
switching action for use in multiplexer applications. Inherent
in the design is low charge inject
(5 Ω max)
ON
match (4 Ω max)
ON
< 175 ns
t
ON
t
< 145 ns
OFF
2
MOS process, which provides low power dissipation yet
ADG333A
FUNCTIONAL BLOCK DIAGRAM
S1A
D1
S1B
IN1
ADG333A
IN2
S2B
D2
S2A
SWITCHES SHOWN FOR A LOGIC 1 INPUT
Figure 1.
PRODUCT HIGHLIGHTS
1. Extended signal range.
The ADG333A is fabricated on an enhanced LC
process, giving an increased signal range which extends to
the supply rails.
2. Low power dissipation.
3. Low R
4. Single-supply operation.
For applications where the analog signal is unipolar, the
ADG333A can be operated from a single rail power supply.
The part is fully specified with a single 12 V supply.
ON
.
S4A
D2
S4B
IN4
IN3
S3B
D3
S3A
01212-001
2
MOS
Rev. A
Information furnished by Analog Devices is believed to be accurate and reliable.
However, no responsibility is assumed by Analog Devices for its use, nor for any
infringements of patents or other rights of third parties that may result from its use.
Specifications subject to change without notice. No license is granted by implication
or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
Fax: 781.461.3113
Parameter +25°C −40°C to +85°C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range
R
ON
∆RON
20
45 45 Ω max
5 Ω max VD = ±5 V, IS = –10 mA
VSS to V
RON Match 4 Ω max VD = ±10 V, IS = –10 mA
LEAKAGE CURRENTS VDD = +16.5 V, VSS = –16.5 V
Source OFF Leakage IS (OFF) ±0.1
±0.25 ±3 nA max Figure 15
Channel ON Leakage ID, IS (ON) ±0.1
±0.4 ±5 nA max Figure 16
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
Input Current
I
or I
INL
INH
2.4 V min
INH
0.8 V max
INL
±0.005 µA typ VIN = 0 V or V
±0.5 µA max
DYNAMIC CHARACTERISTICS2
tON 90
t
80
OFF
Break-Before-Make Delay, t
10 ns min RL = 300 Ω, CL= 35 pF;
OPEN
175 ns max VS = ±10 V; Figure 17
145 ns max VS = ±10 V; Figure 17
V
Charge Injection 2 pC typ VD = 0 V, RD = 0 Ω, CL= 10 nF;
10 pC max VDD = +15 V, VSS = –15 V; Figure 19
OFF Isolation 72 dB typ RL = 75 Ω, CL = 5 pF, f = 1 MHz;
V
Channel-to-Channel Crosstalk 85 dB typ RL = 75 Ω, CL = 5 pF, f = 1 MHz;
V
CS (OFF) 7 pF typ
CD, CS (ON) 26 pF typ
POWER REQUIREMENTS
IDD 0.05 mA typ Digital inputs = 0 V or 5 V
0.25 0.35 mA max
I
SS
VDD/VSS
1
Temperature range is as follows: B version: −40°C to +85°C.
2
Guaranteed by design; not subject to production test.
Parameter +25°C −40°C to +85°C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to V
RON 35 Ω typ VD = 1 V, 10 V, IS = –1 mA
75 Ω max
LEAKAGE CURRENTS VDD = 13.2 V
Source OFF Leakage IS (OFF) ±0.1 nA typ VD = 12.2 V/1 V, VS = 1 V/12.2 V
±0.25 ±3 nA max Figure 15
Channel ON Leakage ID, IS (ON) ±0.1 nA typ VS = VD = 12.2 V/1 V
±0.4 ±5 nA max Figure 16
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
INH
INL
2.4 V min
0.8 V max
Input Current
I
or I
INL
INH
±0.005 µA typ VIN = 0 V or V
±0.5 µA max
DYNAMIC CHARACTERISTICS2
t
ON
110 ns typ RL = 300 Ω, CL = 35 pF;
200 ns max VS = 8 V; Figure 17
t
OFF
100 ns typ RL = 300 Ω, CL = 35 pF;
180 ns max VS = 8 V; Figure 17
Break-Before-Make Delay, t
OPEN
10 ns min RL = 300 Ω, CL = 35 pF;
ns min VS = 5 V; Figure 18
Charge Injection 5 pC typ VD = 6 V, RD = 0 W, CL = 10 nF;
V
OFF Isolation 72 dB typ RL = 75 Ω, CL = 5 pF, f = 1 MHz;
V
Channel-to-Channel Crosstalk 85 dB typ RL = 75 Ω, CL = 5 pF, f = 1 MHz;
V
CS (OFF) 12 pF typ
CD, CS (ON) 25 pF typ
POWER REQUIREMENTS VDD = 13.5 V
I
DD
0.05 mA typ Digital inputs = 0 V or 5 V
0.25 0.35 mA max
V
DD
1
Temperature range is as follows: B Version: −40°C to +85°C.
2
Guaranteed by design; not subject to production test.
±3/±30 V min/V max
1
DD
V
DD
= 12 V, VSS = 0 V; Figure 19
DD
= 1.15 V rms; Figure 20
S
= 1.15 V rms; Figure 21
S
Rev. A | Page 4 of 12
Loading...
+ 8 hidden pages
You need points to download manuals.
1 point = 1 manual.
You can buy points or you can get point for every manual you upload.