Bidirectional level translation
Operates from 1.15 V to 5.5 V
Low quiescent current < 1 µA
No direction pin
APPLICATIONS
SPI®, MICROWIRE™ level translation
Low voltage ASIC level translation
Smart card readers
Cell phones and cell phone cradles
Portable communication devices
Telecommunications equipment
Network switches and routers
Storage systems (SAN/NAS)
Computing/server applications
GPS
Portable POS systems
Low cost serial interfaces
GENERAL DESCRIPTION
The ADG3304 is a bidirectional logic level translator that contains four bidirectional channels. It can be used in multivoltage
digital system applications such as data transfer between a low
voltage DSP/controller and a higher voltage device using SPI
and MICROWIRE interfaces. The internal architecture allows
the device to perform bidirectional logic level translation
without an additional signal to set the direction in which the
translation takes place.
The voltage applied to V
the device, while V
operation, V
CCY
must always be less than V
CCA
patible logic signals applied to the A side of the device appear as
-compatible levels on the Y side. Similarly, V
V
CCY
logic levels applied to the Y side of the device appear as V
compatible logic levels on the A side.
sets the logic levels on the A side of
CCA
sets the levels on the Y side. For proper
CCY
. The V
-com-
CCA
-compatible
CCY
CCA
-
Bidirectional Logic Level Translator
ADG3304
FUNCTIONAL BLOCK DIAGRAM
V
CCA
A1
A2
A3
A4
EN
The enable pin (EN) provides three-state operation on both the
A-side and the Y-side pins. When the EN pin is pulled low, the
terminals on both sides of the device are in the high impedance
state. The EN pin is referred to the V
driven high for normal operation.
The ADG3304 is available in compact 14-lead TSSOP and
12-bump WLCSP packages. It is guaranteed to operate over
the 1.15 V to 5.5 V supply voltage range and the extended
−40°C to +85°C temperature range.
PRODUCT HIGHLIGHTS
1. Bidirectional level translation.
2. Fully guaranteed over the 1.15 V to 5.5 V supply range.
3. No direction pin.
GND
Figure 1.
V
CCY
Y1
Y2
Y3
Y4
supply voltage and
CCA
04860-001
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable.
However, no responsibility is assumed by Analog Devices for its use, nor for any
infringements of patents or other rights of third parties that may result from its use.
Specifications subject to change without notice. No license is granted by implication
or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
0.4 V
VA = V
VA = 0 V, IOL = 20 µA, Figure 29 0.4 V
f = 1 MHz, EN = 0, Figure 34 6 pF
VY = 0 V/V
V
= 1.15 V V
CCA
V
= 1.2 V to 5.5 V V
CCA
0.4 V
VEN = 0 V/V
3 pF
RS = RT = 50 Ω, VA = 0 V/V
V
= 0 V/V
Y
R
P, A-Y
R, A-Y
F, A-Y
MAX, A-Y
SKEW, A-Y
PPSKEW, A-Y
R
P, Y-A
R, Y-A
F, Y-A
MAX, Y-A
SKEW, Y-A
PPSKEW, Y-A
R
P, A-Y
R, A-Y
F, A-Y
MAX, A-Y
SKEW, A-Y
PPSKEW, A-Y
= RT = 50 Ω, CL = 50 pF, Figure 36
S
6 10 ns
2 3.5 ns
2 3.5 ns
50 Mbps
2 4 ns
3 ns
= RT = 50 Ω, CL = 15 pF, Figure 37
S
4 7 ns
1 3 ns
3 7 ns
50 Mbps
2 3.5 ns
2 ns
= RT = 50 Ω, CL = 50 pF, Figure 36
S
8 11 ns
2 5 ns
2 5 ns
50 Mbps
2 4 ns
4 ns
to T
MIN
, IOH = 20 µA, Figure 28 V
CCY
, EN = 0, Figure 30 ±1 µA
CCA
, IOH = 20 µA, Figure 29 V
CCA
, EN = 0, Figure 31 ±1 µA
CCY
, VA = 0 V, Figure 32 ±1
CCA
(Y→A), Figure 35
CCY
, unless otherwise noted.
MAX
(A→Y),
CCA
1 1.8 µs
− 0.3 V
CCA
− 0.4
CCA
− 0.4 V
CCA
− 0.4 V
CCY
− 0.4 V
CCY
− 0.3 V
CCA
− 0.4 V
CCA
µA
SPECIFICATIONS
V
= 1.65 V to 5.5 V, V
CCY
Table 1.
Parameter Symbol Conditions Min Typ2Max Unit
LOGIC INPUTS/OUTPUTS
A Side
Input High Voltage
V
Input Low Voltage
Output High Voltage V
Output Low Voltage V
Capacitance
Leakage Current I
Y Side
Input Low Voltage
Input High Voltage3 V
Output High Voltage V
Output Low Voltage V
Capacitance
Leakage Current I
Enable (EN)
Input High Voltage
V
Input Low Voltage
Leakage Current I
Capacitance
Enable Time
SWITCHING CHARACTERISTICS
3.3 V ± 0.3 V ≤ V
A→Y Level Translation
Propagation Delay t
Rise Time t
Fall Time t
Maximum Data Rate D
Channel-to-Channel Skew t
Part-to-Part Skew t
Y→A Level Translation
Propagation Delay t
Rise Time t
Fall Time t
Maximum Data Rate D
Channel-to-Channel Skew t
Part-to-Part Skew t
1.8 V ± 0.15 V ≤ V
A→Y Translation
Propagation Delay t
Rise Time t
Fall Time t
Maximum Data Rate D
Channel-to-Channel Skew t
Part-to-Part Skew t
3
3
3
3
CCA
Rev. 0 | Page 3 of 20
ADG3304
Parameter Symbol Conditions Min Typ2Max Unit
Y→A Translation
Propagation Delay t
Rise Time t
Fall Time t
Maximum Data Rate D
Channel-to-Channel Skew t
Part-to-Part Skew t
1.15 V to 1.3 V ≤ V
CCA
≤ V
, V
= 3.3 V ± 0.3 V
CCY
CCY
A→Y Translation
Propagation Delay t
Rise Time t
Fall Time t
Maximum Data Rate D
Channel-to-Channel Skew t
Part-to-Part Skew t
Y→A Translation
Propagation Delay t
Rise Time t
Fall Time t
Maximum Data Rate D
Channel-to-Channel Skew t
Part-to-Part Skew t
1.15 V to 1.3 V ≤ V
CCA
≤ V
, V
= 1.8 V ± 0.3 V
CCY
CCY
A→Y Translation
Propagation Delay t
Rise Time t
Fall Time t
Maximum Data Rate D
Channel-to-Channel Skew t
Part-to-Part Skew t
Y→A Translation
Propagation Delay t
Rise Time t
Fall Time t
Maximum Data Rate D
Channel-to-Channel Skew t
Part-to-Part Skew t
2.5 V ± 0.2 V ≤ V
CCA
≤ V
CCY
, V
CCY
= 3.3 V ± 0.3 V
A→Y Translation
Propagation Delay t
Rise Time t
Fall Time t
Maximum Data Rate D
Channel-to-Channel Skew t
Part-to-Part Skew t
Y→A Translation
Propagation Delay t
Rise Time t
Fall Time t
Maximum Data Rate D
Channel-to-Channel Skew t
Part-to-Part Skew t
R
P, Y-A
R, Y-A
F, Y-A
MAX, Y-A
SKEW, Y-A
PPSKEW, Y-A
R
P, A-Y
R, A-Y
F, A-Y
MAX, A-Y
SKEW, A-Y
PPSKEW, A-Y
R
P, Y-A
R, Y-A
F, Y-A
MAX, Y-A
SKEW, Y-A
PPSKEW, Y-A
R
P, A-Y
R, A-Y
F, A-Y
MAX, A-Y
SKEW, A-Y
PPSKEW, A-Y
R
P, Y-A
R, Y-A
F, Y-A
MAX, Y-A
SKEW, Y-A
PPSKEW, Y-A
R
P, A-Y
R, A-Y
F, A-Y
MAX, A-Y
SKEW, A-Y
PPSKEW, A-Y
R
P, Y-A
R, Y-A
F, Y-A
MAX, Y-A
SKEW, Y-A
PPSKEW, Y-A
= RT = 50 Ω, CL = 15 pF, Figure 37
S
5 8 ns
2 3.5 ns
2 3.5 ns
50 Mbps
2 3 ns
3 ns
= RT = 50 Ω, CL = 50 pF, Figure 36
S
9 18 ns
3 5 ns
2 5 ns
40 Mbps
2 5 ns
10 ns
= RT = 50 Ω, CL = 15 pF, Figure 37
S
5 9 ns
2 4 ns
2 4 ns
40 Mbps
2 4 ns
4 ns
= RT = 50 Ω, CL = 50 pF, Figure 36
S
12 25 ns
7 12 ns
3 5 ns
25 Mbps
2 5 ns
15 ns
= RT = 50 Ω, CL = 15 pF, Figure 37
S
14 35 ns
5 16 ns
2.5 6.5 ns
25 Mbps
3 6.5 ns
23.5 ns
= RT = 50 Ω, CL = 50 pF, Figure 36
S
7 10 ns
2.5 4 ns
2 5 ns
60 Mbps
1.5 2 ns
4 ns
= RT = 50 Ω, CL = 15 pF, Figure 37
S
5 8 ns
1 4 ns
3 5 ns
60 Mbps
2 3 ns
3 ns
Rev. 0 | Page 4 of 20
ADG3304
Parameter Symbol Conditions Min Typ2Max Unit
POWER REQUIREMENTS
Power Supply Voltages V
V
Quiescent Power Supply Current I
I
Three-State Mode Power Supply Current I
I
1
Temperature range is as follows: B version: −40°C to +85°C.
2
All typical values are at TA = 25°C, unless otherwise noted.
3
Guaranteed by design; not subject to production test.
CCA
CCY
CCA
CCY
HiZA
HiZY
V
≤ V
CCA
CCY
1.65 5.5 V
VA = 0 V/V
= V
V
CCA
VA = 0 V/V
V
= V
CCA
V
= V
CCA
V
= V
CCA
, VY = 0 V/V
CCA
= 5.5 V, EN = 1
CCY
, VY = 0 V/V
CCA
= 5.5 V, EN = 1
CCY
= 5.5 V, EN = 0 0.1 1 µA
CCY
= 5.5 V, EN = 0 0.1 1 µA
CCY
CCY
CCY
,
,
1.15 5.5 V
0.17 1 µA
0.27 1 µA
Rev. 0 | Page 5 of 20
ADG3304
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 2.
Parameter Rating
V
to GND −0.3 V to +7 V
CCA
V
to GND V
CCY
Digital Inputs (A) −0.3 V to (V
Digital Inputs (Y) −0.3 V to (V
EN to GND −0.3 V to +7 V
Operating Temperature Range
Industrial (B Version) −40°C to +85°C
Storage Temperature Range −65°C to +150°C
Junction Temperature 150°C
θJA Thermal Impedance (4-Layer Board)
14-Lead TSSOP 89.21°C/W
12-Bump WLCSP 1200C/W
Lead Temperature, Soldering (10 sec) 300°C
IR Reflow, Peak Temperature (< 20 sec) 260°C
to +7 V
CCA
+ 0.3 V)
CCA
+ 0.3 V)
CCY
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those listed in the operational sections
of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability. Only one absolute maximum rating may be
applied at any one time.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
Rev. 0 | Page 6 of 20
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