Bidirectional level translation
Operates from 1.15 V to 5.5 V
Low quiescent current < 5 µA
No direction pin
APPLICATIONS
SPI®, MICROWIRE® level translation
Low voltage ASIC level translation
Smart card readers
Cell phones and cell phone cradles
Portable communication devices
Telecommunications equipment
Network switches and routers
Storage systems (SAN/NAS)
Computing/server applications
GPS
Portable POS systems
Low cost serial interfaces
GENERAL DESCRIPTION
Bidirectional Logic Level Translator
ADG3301
FUNCTIONAL BLOCK DIAGRAM
V
CCA
A
EN
PRODUCT HIGHLIGHTS
GND
Figure 1.
V
CCY
ADG3301
Y
05517-001
The ADG3301 is a single-channel, bidirectional logic level
translator. It can be used in multivoltage digital system applications such as data transfer between a low voltage DSP/controller
and a higher voltage device. The internal architecture allows the
device to perform bidirectional logic level translation without an
additional signal to set the direction in which the translation
takes place.
The voltage applied to V
the device, while V
operation, V
CCY
must always be less than V
CCA
compatible logic signals applied to the A pin appear as V
compatible levels on the Y pin. Similarly, V
levels applied to the Y pin appear as V
sets the logic levels on the A side of
CCA
sets the levels on the Y side. For proper
. The V
CCY
-compatible logic
CCY
-compatible logic levels
CCA
CCA
-
CCY
-
on the A pin. The enable pin (EN) provides three-state operation
on both the A pin and the Y pin. When the device enable pin is
pulled low, the terminals on both sides of the device are in the
high impedance state. The EN pin is referred to the V
CCA
supply
voltage and driven high for normal operation.
The ADG3301 is available in a compact 6-lead SC70 package
and is guaranteed to operate over the 1.15 V to 5.5 V supply
voltage range and extended −40°C to +85°C temperature range.
1. Bidirectional level translation.
2. Fully guaranteed over the 1.15 V to 5.5 V supply range.
3. No direction pin.
4. Compact 6-lead SC70 package.
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Anal og Devices for its use, nor for any infringements of patents or ot her
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
Input Low Voltage
Output High Voltage V
Output Low Voltage V
Capacitance
3
Leakage Current I
Y Side
Input High Voltage
Input Low Voltage3 V
Output High Voltage V
Output Low Voltage V
Capacitance
3
Leakage Current I
Enable (EN)
Input High Voltage
V
Input Low Voltage
Leakage Current I
Capacitance
Enable Time
3
3
SWITCHING CHARACTERISTICS3
3.3 V ± 0.3 V ≤ V
CCA
≤ V
A→Y Level Translation
Propagation Delay
Rise Time
Fall Time
Maximum Data Rate
Part-to-Part Skew
Y→A Level Translation
Propagation Delay
Rise Time
Fall Time
Maximum Data Rate
Part-to-Part Skew
1.8 V ± 0.15 V ≤ V
CCA
A→Y Translation
Propagation Delay
Rise Time
Fall Time
Maximum Data Rate
Part-to-Part Skew
≤ V
CCA
3
3
3
3
3
, V
CCY
CCY
= 1.15 V to V
, GND = 0 V. All specifications T
CCY
MIN
to T
, unless otherwise noted.
MAX
Symbol Conditions Min Typ2Max Unit
V
IHA
IHA
V
ILA
VY = V
OHA
VY = 0 V, IOL = 20 µA, see Figure 27 0.4 V
OLA
C
A
LA, HiZ
V
IHY
ILY
OHY
OLY
CY
LY, H iZ
V
IHEN
IHEN
V
ILEN
LEN
C
EN
t
EN
= 5 V ± 0.5 V
CCY
V
= 1.15 V V
CCA
V
= 1.2 V to 5.5 V 0.65 × V
CCA
− 0.3 V
CCA
CCA
0.35 × V
, IOH = 20 µA, see Figure 27 V
CCY
− 0.4 V
CCA
f = 1 MHz, EN = 0, see Figure 32 9 pF
VA = 0 V/V
0.65 × V
, EN = 0, see Figure 29 ±1 µA
CCA
V
CCY
0.35 × V
VA = V
, IOH = 20 µA, see Figure 28 V
CCA
− 0.4 V
CCY
VA = 0 V, IOL = 20 µA, see Figure 28 0.4 V
f = 1 MHz, EN = 0, see Figure 33 6 pF
VY = 0 V/V
V
CCA
V
CCA
, EN = 0, see Figure 30 ±1 µA
CCY
= 1.15 V V
= 1.2 V to 5.5 V 0.65 × V
− 0.3 V
CCA
V
CCA
0.35 × V
VEN = 0 V/V
, VA = 0 V, see Figure 31 ±1 µA
CCA
3 pF
RS = RT = 50 Ω, VA = 0 V/V
= 0 V/V
V
Y
= RT = 50 Ω, CL = 50 pF,
R
S
(Y→A), see Figure 34
CCY
(A→Y),
CCA
1 1.8 µs
see Figure 35
t
P, A→Y
t
R, A→Y
t
F, A→Y
D
MAX, A→Y
t
PPSKEW, A→Y
6 10 ns
2 3.5 ns
2 3.5 ns
50 Mbps
3 ns
= RT = 50 Ω, CL = 15 pF,
R
S
see Figure 36
t
P, Y→A
t
R, Y→A
t
F, Y→A
D
MAX, Y→A
t
PPSKEW, Y→A
, V
= 3.3 V ± 0.3 V
CCY
4 7 ns
1 3 ns
3 7 ns
50 Mbps
2 ns
= RT = 50 Ω, CL = 50 pF,
R
S
see Figure 35
t
P, A→Y
t
R, A→Y
t
F, A→Y
D
MAX, A→Y
t
PPSKEW, A→Y
8 11 ns
2 5 ns
2 5 ns
50 Mbps
4 ns
CCA
CCY
CCA
V
V
V
Rev. 0 | Page 3 of 20
ADG3301
www.BDTIC.com/ADI
Parame ter
1
Y→A Translation
Propagation Delay
Rise Time
Fall Time
Maximum Data Rate
Part-to-Part Skew
1.15 V to 1.3 V ≤ V
A→Y Translation
Propagation Delay
Rise Time
Fall Time
Maximum Data Rate
Part-to-Part Skew
Y→A Translation
Propagation Delay
Rise Time
Fall Time
Maximum Data Rate
Part-to-Part Skew
1.15 V to 1.3 V ≤ V
A→Y Translation
Propagation Delay
Rise Time
Fall Time
Maximum Data Rate
Part-to-Part Skew
Y→A Translation
Propagation Delay
Rise Time
Fall Time
Maximum Data Rate
Part-to-Part Skew
2.5 V ± 0.2 V ≤ V
A→Y Translation
Propagation Delay
Rise Time
Fall Time
Maximum Data Rate
Part-to-Part Skew
Y→A Translation
Propagation Delay
Rise Time
Fall Time
Maximum Data Rate
Part-to-Part Skew
CCA
CCA
CCA
≤ V
≤ V
≤ V
Symbol Conditions Min Typ2Max Unit
= RT = 50 Ω, CL = 15 pF,
R
S
see Figure 36
t
P, Y→A
t
R, Y→A
t
F, Y→A
D
MAX, Y→A
t
PPSKEW, Y→A
, V
= 3.3 V ± 0.3 V
CCY
CCY
5 8 ns
2 3.5 ns
2 3.5 ns
50 Mbps
3 ns
= RT = 50 Ω, CL = 50 pF,
R
S
see Figure 35
t
P, A→Y
t
R, A→Y
t
F, A→Y
D
MAX, A→Y
t
PPSKEW, A→Y
9 18 ns
3 5 ns
2 5 ns
40 Mbps
10 ns
= RT = 50 Ω, CL = 15 pF,
R
S
see Figure 36
t
P, Y→A
t
R, Y→A
t
F, Y→A
D
MAX, Y→A
t
PPSKEW, Y→A
, V
= 1.8 V ± 0.3 V
CCY
CCY
5 9 ns
2 4 ns
2 4 ns
40 Mbps
4 ns
= RT = 50 Ω, CL = 50 pF,
R
S
see Figure 35
t
P, A→Y
t
R, A→Y
t
F, A→Y
D
MAX, A→Y
t
PPSKEW, A→Y
12 25 ns
7 12 ns
3 5 ns
25 Mbps
15 ns
= RT = 50 Ω, CL = 15 pF,
R
S
see Figure 36
t
P, Y→A
t
R, Y→A
t
F, Y→A
D
MAX, Y→A
t
PPSKEW, Y→A
, V
= 3.3 V ± 0.3 V
CCY
CCY
14 35 ns
5 16 ns
2.5 6.5 ns
25 Mbps
23.5 ns
= RT = 50 Ω, CL = 50 pF,
R
S
see Figure 35
t
P, A→Y
t
R, A→Y
t
F, A→Y
D
MAX, A→Y
t
PPSKEW, A→Y
7 10 ns
2.5 4 ns
2 5 ns
60 Mbps
4 ns
= RT = 50 Ω, CL = 15 pF,
R
S
see Figure 36
t
P, Y→A
t
R, Y→A
t
F, Y→A
D
MAX, Y→A
t
PPSKEW, Y→A
5 8 ns
1 4 ns
3 5 ns
60 Mbps
3 ns
Rev. 0 | Page 4 of 20
ADG3301
www.BDTIC.com/ADI
Parame ter
1
Symbol Conditions Min Typ2Max Unit
POWER REQUIREMENTS
Power Supply Voltages V
V
Quiescent Power Supply Current I
I
Three-State Mode Power Supply Current I
I
1
Temperature range for the B version is −40°C to +85°C.
2
All typical values are at TA = 25°C, unless otherwise noted.
3
Guaranteed by design, not subject to production test.
CCA
CCY
CCA
CCY
HiZA
HiZY
V
CCA
≤ V
CCY
1.15 5.5 V
1.65 5.5 V
VA = 0 V/V
= V
V
CCA
VA = 0 V/V
V
= V
CCA
V
= V
CCA
V
= V
CCA
, VY = 0 V/V
CCA
= 5.5 V, EN = 1
CCY
, VY = 0 V/V
CCA
= 5.5 V, EN = 1
CCY
= 5.5 V, EN = 0 0.1 5 µA
CCY
= 5.5 V, EN = 0 0.1 5 µA
CCY
CCY
CCY
,
,
0.17 5 µA
0.27 5 µA
Rev. 0 | Page 5 of 20
ADG3301
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ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 2.
Parameter Rating
V
to GND −0.3 V to +7 V
CCA
V
to GND V
CCY
Digital Inputs (A) −0.3 V to V
Digital Inputs (Y) −0.3 V to V
EN to GND −0.3 V to +7 V
Operating Temperature Range
Industrial (B Version) −40°C to +85°C
Storage Temperature Range −65°C to +150°C
Junction Temperature 150°C
θJA Thermal Impedance (4-Layer Board)
6-Lead SC70 494.1°C/W
Lead Temperature, Soldering (10 sec) 300°C
IR Reflow, Peak Temperature (< 20 sec) 260(+0/−5)°C
to +7 V
CCA
+ 0.3 V
CCA
+ 0.3 V
CCY
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those listed in the operational sections
of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
Only one absolute maximum rating may be applied at any one
time.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
Rev. 0 | Page 6 of 20
ADG3301
V
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PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
1
CCA
ADG3301
A 2
TOP VIEW
(Not to Scale)
GND 3
Figure 2. Pin Configuration
Table 3. Pin Function Descriptions
Pin No. Mnemonic Description
1 V
CCA
Power Supply Voltage Input for the A I/O Pin (1.15 V ≤ V
2 A Input/Output A. Referenced to V
3 GND Ground (0 V).
4 EN Active High Enable Input.
5 Y Input/Output Y. Referenced to V
6 V
CCY
Power Supply Voltage Input for the Y I/O Pin (1.65 V ≤ V
Leakage current at Pin A when EN = 0 (Pin A three-stated).
V
IHY
Logic input high voltage at Pin Y.
V
ILY
Logic input low voltage at Pin Y.
V
OHY
Logic output high voltage at Pin Y.
V
OLY
Logic output low voltage at Pin Y.
C
Y
Capacitance measured at Pin Y (EN = 0).
t
R, A→Y
Rise time when translating logic levels in the A→Y direction.
t
F, A →Y
Fall time when translating logic levels in the A→Y direction.
D
MAX, A→Y
Guaranteed data rate when translating logic levels in the A→Y
direction under the driving and loading conditions specified in
Tabl e 1 .
t
PPSKEW, A→Y
Difference in propagation delay between any one channel and
the same channel on a different part (under same
driving/loading conditions) when translating in the A→Y
direction.
t
P, Y→ A
Propagation delay when translating logic levels in the Y→A
direction.
t
R, Y→A
Rise time when translating logic levels in the Y→A direction.
t
F, Y →A
Fall time when translating logic levels in the Y→ A direction.
D
MAX, Y→A
Guaranteed data rate when translating logic levels in the Y→A
direction under the driving and loading conditions specified in
Tabl e 1 .
I
LY, HiZ
Leakage current at pin and when EN = 0 (Pin A three-stated).
V
IHEN
Logic input high voltage at the EN pin.
V
ILEN
Logic input low voltage at the EN pin.
C
EN
Capacitance measured at EN pin.
I
LEN
Enable (EN) pin leakage current.
t
EN
Three-state enable time for Pin A and Pin Y.
t
P, A→ Y
Propagation delay when translating logic levels in the A→Y
direction.
t
PPSKEW, Y→A
Difference in propagation delay between any one channel and
the same channel on a different part (under the same driving/
loading conditions) when translating in the Y→A direction.
I
CCA
V
CCA
I
CCY
V
CCY
I
HiZA
V
CCA
I
HiZY
V
CCY
Rev. 0 | Page 15 of 20
supply current.
supply current.
supply current during three-state mode (EN = 0).
supply current during three-state mode (EN = 0).
ADG3301
www.BDTIC.com/ADI
THEORY OF OPERATION
The ADG3301 level translator allows the level shifting
necessary for data transfer in a system where multiple supply
voltages are used. The device requires two supplies, V
V
(V
≤ V
CCY
CCA
). These supplies set the logic levels on each
CCY
CCA
and
side of the device. When driving the A pin, the device translates
the V
-compatible logic levels to V
CCA
-compatible logic levels
CCY
available at the Y pin. Similarly, because the device is capable of
bidirectional translation, when driving the Y pin the V
patible logic levels are translated to V
-compatible logic levels
CCA
CCY
-com-
available at the A pin. When EN = 0, the A pin and the Y pin
are three-stated. When EN is driven high, the ADG3301 goes
into normal operation mode and performs level translation.
LEVEL TRANSLATOR ARCHITECTURE
The ADG3301 consists of a single bidirectional channel that can
translate logic levels in either the A→Y or the Y→A direction.
It uses a one-shot accelerator architecture that ensures excellent
switching characteristics. Figure 37 shows a simplified block
diagram of the ADG3301 level translator.
V
CCA
6kΩ
U2
U1
P
A
Figure 37. Simplified Block Diagram of an ADG3301 Channel
ONE-SHOT GENERATOR
U4
6kΩ
U3
The logic level translation in the A→Y direction is performed
using a level translator (U1) and an inverter (U2), while the
translation in the Y→A direction is performed using the
inverters U3 and U4. The one-shot generator detects a rising
or falling edge present on either the A side or the Y side of the
channel. It sends a short pulse that turns on the PMOS transistors (T1 and T2) for a rising edge, or the NMOS transistors
(T3 and T4) for a falling edge. This charges/discharges the
capacitive load faster, which results in fast rise and fall times.
V
CCY
T2T1
N
Y
T3T4
05517-037
INPUT DRIVING REQUIREMENTS
To ensure correct operation of the ADG3301, the circuit that
drives the input of an ADG3301 channel must have an output
impedance of less than or equal to 150 Ω and a minimum peak
current driving capability of 36 mA.
OUTPUT LOAD REQUIREMENTS
The ADG3301 level translator is designed to drive CMOScompatible loads. If current driving capability is required, it is
recommended to use buffers between the ADG3301 outputs
and the load.
ENABLE OPERATION
The ADG3301 provides three-state operation at the A I/O pin
and Y I/O pin by using the enable (EN) pin as shown in Table 4.
Table 4. Truth Table
EN Y I/O Pin A I/O Pin
0 Hi-Z
1 Normal operation
1
High impedance state.
2
In normal operation, the ADG3301 performs level translation.
1
2
1
Hi-Z
Normal operation
2
While EN = 0, the ADG3301 enters into tri-state mode. In this
mode, the current consumption from both the V
CCA
and V
CCY
supplies is reduced, allowing the user to save power, which is
critical especially on battery-operated systems. The EN input pin
can be driven with either V
CCA
- or V
-compatible logic levels.
CCY
POWER SUPPLIES
For proper operation of the ADG3301, the voltage applied to
the V
to V
sequence is V
properly only after both supply voltages reach their nominal
values. It is not recommended to use the part in a system where,
during power-up, V
significant increase in the current taken from the V
For optimum performance, the V
decoupled to GND, and placed as close as possible to the device.
must be always less than or equal to the voltage applied
CCA
. To meet this condition, the recommended power-up
CCY
first and then V
CCY
may be greater than V
CCA
. The ADG3301 operates
CCA
due to a
CCY
CCA
CCA
and V
pins should be
CCY
supply
Rev. 0 | Page 16 of 20
ADG3301
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DATA RATE
The maximum data rate at which the device is guaranteed to
operate is a function of the V
CCA
and V
nation and the load capacitance. It represents the maximum
frequency of a square wave that can be applied to the I/O pins,
which ensures that the device operates within the datasheet
specifications in terms of output voltage (V
Table 5. Guaranteed Data Rate (Mbps)
V
CCA
1.2 V (1.15 V to 1.3 V) 25 30 40 40
1.8 V (1.65 V to 1.95 V) – 45 50 50
2.5 V (2.3 V to 2.7 V) – – 60 50
3.3 V (3.0 V to 3.6 V) – – – 50
5 V (4.5 V to 5.5 V) – – – –
1
The load capacitance used is 50 pF when translating in the A→Y direction and 15 pF when translating in the Y→A direction.
supply voltage combi-
CCY
and VOH) and
OL
1
1.8 V
(1.65 V to 1.95 V)
power dissipation (the junction temperature does not exceed
the value specified under the Absolute Maximum Ratings
section).
Table 5 shows the guaranteed data rates at which the ADG3301
n operate in both directions (A→Y or Y→A level translation)
ca
for various V
2.5 V
(2.3 V to 2.7 V)
and V
CCA
V
CCY
supply combinations.
CCY
3.3 V
(3.0 V to 3.6 V)
(4.5 V to 5.5 V)
5 V
Rev. 0 | Page 17 of 20
ADG3301
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APPLICATIONS
The ADG3301 is designed for digital circuits that operate at
different supply voltages; therefore, logic level translation is
required. The lower voltage logic signals are connected to the
A pin, and the higher voltage logic signals are connected to the
Y pin. The ADG3301 can provide level translation in both
directions from A→Y or Y→A, eliminating the need for a level
translator IC for each direction. The internal architecture allows
the ADG3301 to perform bidirectional level translation without
an additional signal to set the direction in which the translation
is made. This simplifies the design by eliminating the timing
requirements for the direction signal and reduces the number of
ICs used for level translation.
Figure 38 shows an application where a 1.8 V microprocessor
transfers data to or from a 3.3 V peripheral device using the
ADG3301 level translator.
100nF100nF
I/O
MICROPROCESSOR/
MICROCONTROLLER/
DSP
1
V
CCA
ADG3301
2
L
A
3
GND
6
V
CCY
EN
5
Y
4
3.3V1.8V
I/O
H
PERIPHERAL
DEVICE
LAYOUT GUIDELINES
As with any high speed digital IC, the printed circuit board
layout is important for the overall performance of the circuit.
Care should be taken to ensure proper power supply bypass and
return paths for the high speed signals. Each V
V
) should be bypassed using low effective series resistance
CCY
pin (V
CC
(ESR) and effective series inductance (ESI) capacitors placed as
close as possible to the V
CCA
and V
pins. The parasitic induc-
CCY
tance of the high-speed signal track might cause significant
overshoot. This effect can be reduced by keeping the length of
the tracks as short as possible. A solid copper plane for the
return path (GND) is also recommended.
CCA
and
GNDGND
Figure 38 1.8 V to 3.3 V Level Translation Circuit
05517-038
Rev. 0 | Page 18 of 20
ADG3301
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OUTLINE DIMENSIONS
2.20
2.00
1.80
2.40
1.35
1.25
1.15
PIN 1
1.30 BSC
1.00
0.90
0.70
0.10 MAX
0.10 COPLANARITY
COMPLIANT TO JEDEC STANDARDS MO-203-AB
Figure 39. 6-Lead Thin Shrink Small Outline Transistor Package [SC70]
ORDERING GUIDE
Model Temperature Range Package Description Branding1Package Option
ADG3301BKSZ-REEL
ADG3301BKSZ-REEL72 −40°C to +85°C 6-Lead Thin Shrink Small Outline Transistor Package S0H KS-6
1
Branding on this package is limited to three characters due to space constraints.
2
Z = Pb-free part.
2
−40°C to +85°C 6-Lead Thin Shrink Small Outline Transistor Package S0H KS-6