Bidirectional level translation
Operates from 1.15 V to 5.5 V
Low quiescent current < 5 µA
No direction pin
APPLICATIONS
SPI®, MICROWIRE® level translation
Low voltage ASIC level translation
Smart card readers
Cell phones and cell phone cradles
Portable communication devices
Telecommunications equipment
Network switches and routers
Storage systems (SAN/NAS)
Computing/server applications
GPS
Portable POS systems
Low cost serial interfaces
GENERAL DESCRIPTION
Bidirectional Logic Level Translator
ADG3301
FUNCTIONAL BLOCK DIAGRAM
V
CCA
A
EN
PRODUCT HIGHLIGHTS
GND
Figure 1.
V
CCY
ADG3301
Y
05517-001
The ADG3301 is a single-channel, bidirectional logic level
translator. It can be used in multivoltage digital system applications such as data transfer between a low voltage DSP/controller
and a higher voltage device. The internal architecture allows the
device to perform bidirectional logic level translation without an
additional signal to set the direction in which the translation
takes place.
The voltage applied to V
the device, while V
operation, V
CCY
must always be less than V
CCA
compatible logic signals applied to the A pin appear as V
compatible levels on the Y pin. Similarly, V
levels applied to the Y pin appear as V
sets the logic levels on the A side of
CCA
sets the levels on the Y side. For proper
. The V
CCY
-compatible logic
CCY
-compatible logic levels
CCA
CCA
-
CCY
-
on the A pin. The enable pin (EN) provides three-state operation
on both the A pin and the Y pin. When the device enable pin is
pulled low, the terminals on both sides of the device are in the
high impedance state. The EN pin is referred to the V
CCA
supply
voltage and driven high for normal operation.
The ADG3301 is available in a compact 6-lead SC70 package
and is guaranteed to operate over the 1.15 V to 5.5 V supply
voltage range and extended −40°C to +85°C temperature range.
1. Bidirectional level translation.
2. Fully guaranteed over the 1.15 V to 5.5 V supply range.
3. No direction pin.
4. Compact 6-lead SC70 package.
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Anal og Devices for its use, nor for any infringements of patents or ot her
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
Input Low Voltage
Output High Voltage V
Output Low Voltage V
Capacitance
3
Leakage Current I
Y Side
Input High Voltage
Input Low Voltage3 V
Output High Voltage V
Output Low Voltage V
Capacitance
3
Leakage Current I
Enable (EN)
Input High Voltage
V
Input Low Voltage
Leakage Current I
Capacitance
Enable Time
3
3
SWITCHING CHARACTERISTICS3
3.3 V ± 0.3 V ≤ V
CCA
≤ V
A→Y Level Translation
Propagation Delay
Rise Time
Fall Time
Maximum Data Rate
Part-to-Part Skew
Y→A Level Translation
Propagation Delay
Rise Time
Fall Time
Maximum Data Rate
Part-to-Part Skew
1.8 V ± 0.15 V ≤ V
CCA
A→Y Translation
Propagation Delay
Rise Time
Fall Time
Maximum Data Rate
Part-to-Part Skew
≤ V
CCA
3
3
3
3
3
, V
CCY
CCY
= 1.15 V to V
, GND = 0 V. All specifications T
CCY
MIN
to T
, unless otherwise noted.
MAX
Symbol Conditions Min Typ2Max Unit
V
IHA
IHA
V
ILA
VY = V
OHA
VY = 0 V, IOL = 20 µA, see Figure 27 0.4 V
OLA
C
A
LA, HiZ
V
IHY
ILY
OHY
OLY
CY
LY, H iZ
V
IHEN
IHEN
V
ILEN
LEN
C
EN
t
EN
= 5 V ± 0.5 V
CCY
V
= 1.15 V V
CCA
V
= 1.2 V to 5.5 V 0.65 × V
CCA
− 0.3 V
CCA
CCA
0.35 × V
, IOH = 20 µA, see Figure 27 V
CCY
− 0.4 V
CCA
f = 1 MHz, EN = 0, see Figure 32 9 pF
VA = 0 V/V
0.65 × V
, EN = 0, see Figure 29 ±1 µA
CCA
V
CCY
0.35 × V
VA = V
, IOH = 20 µA, see Figure 28 V
CCA
− 0.4 V
CCY
VA = 0 V, IOL = 20 µA, see Figure 28 0.4 V
f = 1 MHz, EN = 0, see Figure 33 6 pF
VY = 0 V/V
V
CCA
V
CCA
, EN = 0, see Figure 30 ±1 µA
CCY
= 1.15 V V
= 1.2 V to 5.5 V 0.65 × V
− 0.3 V
CCA
V
CCA
0.35 × V
VEN = 0 V/V
, VA = 0 V, see Figure 31 ±1 µA
CCA
3 pF
RS = RT = 50 Ω, VA = 0 V/V
= 0 V/V
V
Y
= RT = 50 Ω, CL = 50 pF,
R
S
(Y→A), see Figure 34
CCY
(A→Y),
CCA
1 1.8 µs
see Figure 35
t
P, A→Y
t
R, A→Y
t
F, A→Y
D
MAX, A→Y
t
PPSKEW, A→Y
6 10 ns
2 3.5 ns
2 3.5 ns
50 Mbps
3 ns
= RT = 50 Ω, CL = 15 pF,
R
S
see Figure 36
t
P, Y→A
t
R, Y→A
t
F, Y→A
D
MAX, Y→A
t
PPSKEW, Y→A
, V
= 3.3 V ± 0.3 V
CCY
4 7 ns
1 3 ns
3 7 ns
50 Mbps
2 ns
= RT = 50 Ω, CL = 50 pF,
R
S
see Figure 35
t
P, A→Y
t
R, A→Y
t
F, A→Y
D
MAX, A→Y
t
PPSKEW, A→Y
8 11 ns
2 5 ns
2 5 ns
50 Mbps
4 ns
CCA
CCY
CCA
V
V
V
Rev. 0 | Page 3 of 20
ADG3301
www.BDTIC.com/ADI
Parame ter
1
Y→A Translation
Propagation Delay
Rise Time
Fall Time
Maximum Data Rate
Part-to-Part Skew
1.15 V to 1.3 V ≤ V
A→Y Translation
Propagation Delay
Rise Time
Fall Time
Maximum Data Rate
Part-to-Part Skew
Y→A Translation
Propagation Delay
Rise Time
Fall Time
Maximum Data Rate
Part-to-Part Skew
1.15 V to 1.3 V ≤ V
A→Y Translation
Propagation Delay
Rise Time
Fall Time
Maximum Data Rate
Part-to-Part Skew
Y→A Translation
Propagation Delay
Rise Time
Fall Time
Maximum Data Rate
Part-to-Part Skew
2.5 V ± 0.2 V ≤ V
A→Y Translation
Propagation Delay
Rise Time
Fall Time
Maximum Data Rate
Part-to-Part Skew
Y→A Translation
Propagation Delay
Rise Time
Fall Time
Maximum Data Rate
Part-to-Part Skew
CCA
CCA
CCA
≤ V
≤ V
≤ V
Symbol Conditions Min Typ2Max Unit
= RT = 50 Ω, CL = 15 pF,
R
S
see Figure 36
t
P, Y→A
t
R, Y→A
t
F, Y→A
D
MAX, Y→A
t
PPSKEW, Y→A
, V
= 3.3 V ± 0.3 V
CCY
CCY
5 8 ns
2 3.5 ns
2 3.5 ns
50 Mbps
3 ns
= RT = 50 Ω, CL = 50 pF,
R
S
see Figure 35
t
P, A→Y
t
R, A→Y
t
F, A→Y
D
MAX, A→Y
t
PPSKEW, A→Y
9 18 ns
3 5 ns
2 5 ns
40 Mbps
10 ns
= RT = 50 Ω, CL = 15 pF,
R
S
see Figure 36
t
P, Y→A
t
R, Y→A
t
F, Y→A
D
MAX, Y→A
t
PPSKEW, Y→A
, V
= 1.8 V ± 0.3 V
CCY
CCY
5 9 ns
2 4 ns
2 4 ns
40 Mbps
4 ns
= RT = 50 Ω, CL = 50 pF,
R
S
see Figure 35
t
P, A→Y
t
R, A→Y
t
F, A→Y
D
MAX, A→Y
t
PPSKEW, A→Y
12 25 ns
7 12 ns
3 5 ns
25 Mbps
15 ns
= RT = 50 Ω, CL = 15 pF,
R
S
see Figure 36
t
P, Y→A
t
R, Y→A
t
F, Y→A
D
MAX, Y→A
t
PPSKEW, Y→A
, V
= 3.3 V ± 0.3 V
CCY
CCY
14 35 ns
5 16 ns
2.5 6.5 ns
25 Mbps
23.5 ns
= RT = 50 Ω, CL = 50 pF,
R
S
see Figure 35
t
P, A→Y
t
R, A→Y
t
F, A→Y
D
MAX, A→Y
t
PPSKEW, A→Y
7 10 ns
2.5 4 ns
2 5 ns
60 Mbps
4 ns
= RT = 50 Ω, CL = 15 pF,
R
S
see Figure 36
t
P, Y→A
t
R, Y→A
t
F, Y→A
D
MAX, Y→A
t
PPSKEW, Y→A
5 8 ns
1 4 ns
3 5 ns
60 Mbps
3 ns
Rev. 0 | Page 4 of 20
ADG3301
www.BDTIC.com/ADI
Parame ter
1
Symbol Conditions Min Typ2Max Unit
POWER REQUIREMENTS
Power Supply Voltages V
V
Quiescent Power Supply Current I
I
Three-State Mode Power Supply Current I
I
1
Temperature range for the B version is −40°C to +85°C.
2
All typical values are at TA = 25°C, unless otherwise noted.
3
Guaranteed by design, not subject to production test.
CCA
CCY
CCA
CCY
HiZA
HiZY
V
CCA
≤ V
CCY
1.15 5.5 V
1.65 5.5 V
VA = 0 V/V
= V
V
CCA
VA = 0 V/V
V
= V
CCA
V
= V
CCA
V
= V
CCA
, VY = 0 V/V
CCA
= 5.5 V, EN = 1
CCY
, VY = 0 V/V
CCA
= 5.5 V, EN = 1
CCY
= 5.5 V, EN = 0 0.1 5 µA
CCY
= 5.5 V, EN = 0 0.1 5 µA
CCY
CCY
CCY
,
,
0.17 5 µA
0.27 5 µA
Rev. 0 | Page 5 of 20
ADG3301
www.BDTIC.com/ADI
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 2.
Parameter Rating
V
to GND −0.3 V to +7 V
CCA
V
to GND V
CCY
Digital Inputs (A) −0.3 V to V
Digital Inputs (Y) −0.3 V to V
EN to GND −0.3 V to +7 V
Operating Temperature Range
Industrial (B Version) −40°C to +85°C
Storage Temperature Range −65°C to +150°C
Junction Temperature 150°C
θJA Thermal Impedance (4-Layer Board)
6-Lead SC70 494.1°C/W
Lead Temperature, Soldering (10 sec) 300°C
IR Reflow, Peak Temperature (< 20 sec) 260(+0/−5)°C
to +7 V
CCA
+ 0.3 V
CCA
+ 0.3 V
CCY
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those listed in the operational sections
of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
Only one absolute maximum rating may be applied at any one
time.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
Rev. 0 | Page 6 of 20
Loading...
+ 14 hidden pages
You need points to download manuals.
1 point = 1 manual.
You can buy points or you can get point for every manual you upload.