3.4 MHz high speed I
32-lead LFCSP_VQ (5 mm × 5 mm)
Double-buffered input logic
Simultaneous update of multiple switches
Up to 300 MHz bandwidth
Fully specified at dual ±5 V/single +12 V operation
On resistance 35 Ω maximum
Low quiescent current < 20 μA
APPLICATIONS
AV switching in TV
Automotive infotainment
AV receivers
CCT V
Ultrasound applications
KVM switching
Telecom applications
Test equipment/instrumentation
PBX systems
2
C option
Switch Array with Dual/Single Supplies
ADG2108
GENERAL DESCRIPTION
The ADG2108 is an analog cross point switch with an
array size of 8 × 10. The switch array is arranged so that
there are eight columns by 10 rows, for a total of 80 switch
channels. The array is bidirectional, and the rows and columns
can be configured as either inputs or outputs. Each of the 80
switches can be addressed and configured through the I
compatible interface. Standard, full speed, and high speed
(3.4 MHz) I
2
C interfaces are supported. Any simultaneous
switch combination is allowed. An additional feature of the
ADG2108 is that switches can be updated simultaneously,
using the LDSW command. In addition, a
RESET
allows all of the switch channels to be reset/off. At power on,
all switches are in the off condition. The device is packaged
in a 32-lead, 5 mm × 5 mm LFCSP_VQ.
2
C-
option
FUNCTIONAL BLOCK DIAGRAM
ADG2108
SCL
SD
INPUT
REGISTER
AND
7 TO 80
DECODER
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Anal og Devices for its use, nor for any infringements of patents or ot her
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
C Interface........................................................... 19
REVISION HISTORY
4/06—Revision 0: Initial Version
Rev. 0 | Page 2 of 28
ADG2108
SPECIFICATIONS
VDD = 12 V ± 10%, VSS = 0 V, VL = 5 V, GND = 0 V, all specifications T
MIN
to T
unless otherwise noted.
MAX,
Table 1.
B Version Y Version
Parameter
+25°C
−40°C to
+85°C
+25°C
−40°C to
+125°C
Unit Conditions
ANALOG SWITCH
Analog Signal Range VDD − 2 V VDD − 2 V V max
On Resistance, RON 30 30 Ω typ VDD = 10.8 V, VIN = 0 V, IS = −10 mA
35 40 35 42 Ω max
32 32 Ω typ VDD = 10.8 V, VIN = 1.4 V, IS = −10 mA
37 42 37 47 Ω max
45 45 Ω typ VDD = 10.8 V, VIN = 5.4 V, IS = −10 mA
50 57 50 62 Ω max
On Resistance Matching 4.5 4.5 Ω typ VDD = 10.8 V, VIN = 0 V, IS = −10 mA
Between Channels, ∆RON 8 9 8 10 Ω max
On Resistance Flatness, R
2.3 2.3 Ω typ VDD = 10.8 V, VIN = 0 V to 1.4 V, IS = −10 mA
FLAT(ON)
3.5 4 3.5 5 Ω max
14.5 14.5 Ω typ VDD = 10.8 V, VIN = 0 V to 5.4 V, IS = −10 mA
18 20 18 22 Ω max
LEAKAGE CURRENTS VDD = 13.2 V
Channel Off Leakage, I
±0.03 ±0.03 μA typ VX = 7 V/1 V, VY = 1 V/7 V
OFF
Channel On Leakage, ION ±0.03 ±0.03 μA typ VX = VY = 1 V or 7 V
DYNAMIC CHARACTERISTICS2
C
11 11 pF typ
OFF
CON 18.5 18.5 pF typ
tON 170 170 ns typ RL = 300 Ω, CL = 35 pF
185 190 185 195 ns max
t
210 210 ns typ RL = 300 Ω, CL = 35 pF
OFF
250 255 250 260 ns max
THD + N 0.04 0.04 % typ
PSRR 90 dB typ
= 10 kΩ, f = 20 Hz to 20 kHz,
R
L
= 1 V p-p
V
S
f = 20 kHz; without decoupling;
see
−3 dB Bandwidth 210 210 MHz typ Individual inputs to outputs
16.5 16.5 MHz typ 8 inputs to 1 output
Off Isolation −69 −69 dB typ RL = 75 Ω, CL = 5 pF, f = 5 MHz
Channel-to-Channel Crosstalk RL = 75 Ω, CL = 5 pF, f = 5 MHz
Adjacent Channels −63 −63 dB typ
Nonadjacent Channels −76 −76 dB typ
Differential Gain 0.4 0.4 % typ RL = 75 Ω, CL = 5 pF, f = 5 MHz
Differential Phase 0.6 0.6 ° typ RL = 75 Ω, CL = 5 pF, f = 5 MHz
Charge Injection −3.5 −3.5 pC typ VS = 4 V, RS = 0 Ω, CL = 1 nF
LOGIC INPUTS (Ax, RESET)
Input High Voltage, V
Input Low Voltage, V
INL
2
2.0 2.0 V min
INH
0.8 0.8 V max
Input Leakage Current, IIN 0.005 0.005 μA typ
±1 ±1 μA max
Input Capacitance, CIN 7 7 pF typ
1
Figure 24
Rev. 0 | Page 3 of 28
ADG2108
B Version Y Version
Parameter
+25°C
+85°C
+25°C
LOGIC INPUTS (SCL, SDA)2
−40°C to
Input High Voltage, V
V
Input Low Voltage, V
0.7 VL 0.7 VL V min
INH
+ 0.3 VL + 0.3 V max
L
−0.3 −0.3 V min
INL
0.3 VL 0.3 VL V max
Input Leakage Current, IIN 0.005 0.005 μA typ VIN = 0 V to VL
±1 ±1 μA max
Input Hysteresis 0.05 VL 0.05 VL V min
Input Capacitance, CIN 7 7 pF typ
LOGIC OUTPUT (SDA)
2
Output Low Voltage, VOL 0.4 0.4 V max I
0.6 0.6 V max I
Floating State Leakage Current ±1 ±1 μA max
POWER REQUIREMENTS
IDD 0.05 0.05 μA typ Digital inputs = 0 V or VL
1 1 μA max
ISS 0.05 0.05 μA typ Digital inputs = 0 V or VL
1 1 μA max
IL Digital inputs = 0 V or VL
Interface Inactive 0.3 0.3 μA typ
2 2 μA max
Interface Active: 400 kHz f
0.1 0.1 mA typ
SCL
0.2 0.2 mA max
Interface Active: 3.4 MHz f
0.4 0.4 mA typ -HS model only
SCL
1.2 1.7 mA max
1
Temperature range is as follows: B version: −40°C to +85°C; Y version: −40°C to +125°C.
2
Guaranteed by design, not subject to production test.
−40°C to
+125°C
Unit Conditions
= 3 mA
SINK
= 6 mA
SINK
Rev. 0 | Page 4 of 28
ADG2108
VDD = +5 V ± 10%, VSS = −5 V ± 10%, VL = 5 V, GND = 0 V, all specifications T
MIN
to T
, unless otherwise noted.
MAX
Table 2.
B Version Y Version
−40°C to
Parameter +25°C
+125°C
+25°C
−40°C to
+125°C
Unit Conditions
ANALOG SWITCH
Analog Signal Range VDD − 2 V V max
On Resistance, RON 34 34 Ω typ VDD = +4.5 V, VSS = −4.5 V, VIN = VSS, IS = −10 mA
40 45 40 50 Ω max
50 50 Ω typ VDD = +4.5 V, VSS = −4.5 V, VIN = 0 V, IS = −10 mA
55 65 55 70 Ω max
66 66 Ω typ VDD = +4.5 V, VSS = −4.5 V, VIN = 1.4 V, IS = −10 mA
75 85 75 95 Ω max
On Resistance Matching 4.5 4.5 Ω typ VDD = +4.5 V, VSS = −4.5 V, VIN = VSS, IS = −10 mA
Between Channels, ∆RON 8 9 8 10 Ω max
On Resistance Flatness, R
17 17 Ω typ VDD = +4.5 V, VSS = −4.5 V, VIN = VSS to 0 V, IS = −10 mA
FLAT(ON)
20 23 20 25 Ω max
34 34 Ω typ VDD = +4.5 V, VSS = −4.5 V, VIN = VSS to 1.4 V, IS = −10 mA
42 45 42 48 Ω max
LEAKAGE CURRENTS VDD = 5.5 V, VSS = 5.5 V
Channel Off Leakage, I
±0.03 ±0.03 μA typ VX = +4.5 V/−2 V, VY = −2 V/+4.5 V
OFF
Channel On Leakage, ION ±0.03 ±0.03 μA typ VX = VY = −2 V or +4.5 V
DYNAMIC CHARACTERISTICS
C
6 6 pF typ
OFF
2
CON 9.5 9.5 pF typ
tON 170 170 ns typ RL = 300 Ω, CL = 35 pF
200 215 200 220 ns max
t
210 210 ns typ RL = 300 Ω, CL = 35 pF
OFF
250 255 250 260 ns max
THD + N 0.04 0.04 % typ RL = 10 kΩ, f = 20 Hz to 20 kHz, VS = 1 V p-p
PSRR 90 dB typ f = 20 kHz; without decoupling; see Figure 24
−3 dB Bandwidth 300 300 MHz typ Individual inputs to outputs
18 18 MHz typ 8 inputs to 1 output
Off Isolation −66 −64 dB typ RL = 75 Ω, CL = 5 pF, f = 5 MHz
Channel-to-Channel Crosstalk RL = 75 Ω, CL = 5 pF, f = 5 MHz
Adjacent Channels −62 −62 dB typ
Nonadjacent Channels −79 −79 dB typ
Differential Gain 1.5 1.5 % typ RL = 75 Ω, CL = 5 pF, f = 5 MHz
Differential Phase 1.8 1.8 ° typ RL = 75 Ω, CL = 5 pF, f = 5 MHz
Charge Injection −3 −3 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF
LOGIC INPUTS (Ax, RESET)
Input High Voltage, V
Input Low Voltage, V
INL
2
2.0 2.0 V min
INH
0.8 0.8 V max
Input Leakage Current, IIN 0.005 0.005 μA typ
±1 ±1 μA max
Input Capacitance, CIN 7 7 pF typ
LOGIC INPUTS (SCL, SDA)2
Input High Voltage, V
V
Input Low Voltage, V
0.7 VL 0.7 VL V min
INH
+ 0.3 VL + 0.3 V max
L
−0.3 −0.3 V min
INL
0.3 VL 0.3 VL V max
1
Rev. 0 | Page 5 of 28
ADG2108
Parameter +25°C
B Version Y Version
−40°C to
+125°C
+25°C
−40°C to
+125°C
Input Leakage Current, IIN 0.005 0.005 μA typ VIN = 0 V to VL
±1 ±1 μA max
Input Hysteresis 0.05 VL 0.05 VL V min
Input Capacitance, CIN 7 7 pF typ
LOGIC OUTPUT (SDA)
2
Output Low Voltage, VOL 0.4 0.4 V max I
0.6 0.6 V max I
Floating State Leakage Current ±1 ±1 μA max
POWER REQUIREMENTS
IDD 0.05 0.005 μA typ Digital inputs = 0 V or VL
1 1 μA max
ISS 0.05 0.005 μA typ Digital inputs = 0 V or VL
1 1 μA max
IL Digital inputs = 0 V or VL
Interface Inactive 0.3 0.3 μA typ
2 2 μA max
Interface Active: 400 kHz f
0.1 0.1 mA typ
SCL
0.1 0.1 mA max
Interface Active: 3.4 MHz f
0.4 0.4 mA typ -HS model only
SCL
0.3 0.3 mA max
1
Temperature range is as follows: B version: –40°C to +85°C; Y version: –40°C to +125°C.
2
Guaranteed by design, not subject to production test.
Unit Conditions
= 3 mA
SINK
= 6 mA
SINK
Rev. 0 | Page 6 of 28
ADG2108
I2C TIMING SPECIFICATIONS
VDD = 5 V to 12 V; VSS = −5 V to 0 V; VL = 5 V; GND = 0 V; TA = T
Table 3.
ADG2108 Limit at T
Parameter1Conditions Min Max Unit Description
f
Standard mode 100 kHz Serial clock frequency
SCL
Fast mode 400 kHz High speed mode
C
C
= 100 pF maximum 3.4 MHz
B
= 400 pF maximum 1.7 MHz
B
2
t1 Standard mode 4 μs t
Fast mode 0.6 μs High speed mode
C
C
= 100 pF maximum 60 ns
B
= 400 pF maximum 120 ns
B
2
t2 Standard mode 4.7 μs t
Fast mode 1.3 μs High speed mode
C
C
= 100 pF maximum 160 ns
B
= 400 pF maximum 320 ns
B
2
t3 Standard mode 250 ns t
Fast mode 100 ns High speed mode
3
t
Standard mode 0 3.45 μs t
4
2
10 ns
Fast mode 0 0.9 μs High speed mode
C
C
= 100 pF maximum 0 70 ns
B
= 400 pF maximum 0 150 ns
B
2
t5 Standard mode 4.7 μs t
Fast mode 0.6 μs High speed mode
2
160 ns
t6 Standard mode 4 μs t
Fast mode 0.6 μs High speed mode
2
160 ns
t7 Standard mode 4.7 μs t
Fast mode 1.3 μs
t8 Standard mode 4 μs t
Fast mode 0.6 μs High speed mode
2
160 ns
t9 Standard mode 1000 ns t
Fast mode 20 + 0.1 CB 300 ns High speed mode
C
C
= 100 pF maximum 10 80 ns
B
= 400 pF maximum 20 160 ns
B
2
t10 Standard mode 300 ns t
Fast mode 20 + 0.1 CB 300 ns
High speed mode
C
C
= 100 pF maximum 10 80 ns
B
= 400 pF maximum 20 160 ns
B
2
Rev. 0 | Page 7 of 28
MIN
to T
MIN
, T
MAX
, unless otherwise noted (see Figure 2).
MAX
, SCL high time
HIGH
, SCL low time
LOW
, data setup time
SU;DAT
, data hold time
HD;DAT
, setup time for a repeated start condition
SU;STA
, hold time for a repeated start condition
HD;STA
, bus free time between a stop and a start condition
BUF
, setup time for a stop condition
SU;STO
, rise time of SDA signal
RDA
, fall time of SDA signal
FDA
ADG2108
ADG2108 Limit at T
Parameter1Conditions Min Max Unit Description
t11 Standard mode 1000 ns t
Fast mode 20 + 0.1 CB 300 ns
High speed mode
C
C
t
Standard mode 1000 ns t
11A
= 100 pF maximum 10 40 ns
B
= 400 pF maximum 20 80 ns
B
2
Fast mode 20 + 0.1 CB 300 ns condition and after an acknowledge bit
High speed mode
C
C
= 100 pF maximum 10 80 ns
B
= 400 pF maximum 20 160 ns
B
2
t12 Standard mode 300 ns t
Fast mode 20 + 0.1 CB 300 ns
High speed mode
C
C
= 100 pF maximum 10 40 ns
B
= 400 pF maximum 20 80 ns
B
2
tSP Fast mode 0 50 ns Pulse width of suppressed spike
High speed mode
1
Guaranteed by initial characterization. All values measured with input filtering enabled. CB refers to capacitive load on the bus line; tR and tF are measured between
0.3 VDD and 0.7 VDD.
2
High speed I2C is available only in -HS models.
3
A device must provide a data hold time for SDA to bridge the undefined region of the SCL falling edge.
2
0 10 ns
MIN
, T
MAX
, rise time of SCL signal
RCL
, rise time of SCL signal after a repeated start
RCL1
, fall time of SCL signal
FCL
TIMING DIAGRAM
SCL
SDA
t
7
S
P
S = START CONDI TION
P = STOP CO NDITION
t
11
t
2
t
6
t
4
t
12
t
3
t
1
S
t
6
t
5
t
10
t
8
t
9
P
5898-002
Figure 2. Timing Diagram for 2-Wire Serial Interface
Rev. 0 | Page 8 of 28
ADG2108
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 4.
Parameter Rating
VDD to VSS 15 V
VDD to GND −0.3 V to +15 V
VSS to GND +0.3 V to −7 V
VL to GND −0.3 V to +7 V
Analog Inputs VSS − 0.3 V to VDD + 0.3 V
Digital Inputs
Continuous Current
10 V on Input; Single Input
Connected to Single Output
1 V on Input; Single Input
Connected to Single Output
10 V on Input; Eight Inputs
Connected to Eight Outputs
Operating Temperature Range
Industrial (B Version) –40°C to +85°C
Automotive (Y Version) –40°C to +125°C
Storage Temperature Range –65°C to +150°C
Junction Temperature 150°C
32-Lead LFCSP_VQ
Peak Temperature 260°C (+0/–5)
Time at Peak Temperature 10 sec to 40 sec
−0.3 V to V
whichever occurs first
65 mA
90 mA
25 mA
+ 0.3 V or 30 mA,
L
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
Rev. 0 | Page 9 of 28
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