ANALOG DEVICES ADG2108 Service Manual

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A
查询ADG2108供应商
I2C® CMOS 8 × 10 Unbuffered Analog
FEATURES
I2C-compatible interface
3.4 MHz high speed I 32-lead LFCSP_VQ (5 mm × 5 mm) Double-buffered input logic
Simultaneous update of multiple switches Up to 300 MHz bandwidth Fully specified at dual ±5 V/single +12 V operation On resistance 35 Ω maximum Low quiescent current < 20 μA
APPLICATIONS
AV switching in TV Automotive infotainment AV receivers CCT V Ultrasound applications KVM switching Telecom applications Test equipment/instrumentation PBX systems
2
C option
Switch Array with Dual/Single Supplies
GENERAL DESCRIPTION
The ADG2108 is an analog cross point switch with an array size of 8 × 10. The switch array is arranged so that there are eight columns by 10 rows, for a total of 80 switch channels. The array is bidirectional, and the rows and columns can be configured as either inputs or outputs. Each of the 80 switches can be addressed and configured through the I compatible interface. Standard, full speed, and high speed (3.4 MHz) I
2
C interfaces are supported. Any simultaneous switch combination is allowed. An additional feature of the ADG2108 is that switches can be updated simultaneously, using the LDSW command. In addition, a
RESET
allows all of the switch channels to be reset/off. At power on, all switches are in the off condition. The device is packaged in a 32-lead, 5 mm × 5 mm LFCSP_VQ.
2
C-
option
FUNCTIONAL BLOCK DIAGRAM
ADG2108
SCL
SD
INPUT
REGISTER
AND
7 TO 80
DECODER
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Anal og Devices for its use, nor for any infringements of patents or ot her rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.
1
80
LDSW
LATCHES
LDSW
GNDA0A1A2
1
80
Figure 1.
L
8 × 10 SWITCH ARRAY
Y0 TO Y7 (I/O)
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 www.analog.com Fax: 781.461.3113 ©2006 Analog Devices, Inc. All rights reserved.
X0 TO X9 (I/O)
5898-001
ADG2108
TABLE OF CONTENTS
Features.............................................................................................. 1
Load Switch (LDSW)................................................................. 18
Applications....................................................................................... 1
General Description ......................................................................... 1
Functional Block Diagram .............................................................. 1
Revision History ............................................................................... 2
Specifications..................................................................................... 3
2
I
C Timing Specifications............................................................ 7
Timing Diagram........................................................................... 8
Absolute Maximum Ratings............................................................ 9
ESD Caution.................................................................................. 9
Pin Configuration and Function Descriptions........................... 10
Typical Performance Characteristics ........................................... 11
Test Circuits..................................................................................... 15
Terminology .................................................................................... 17
Theory of Operation ...................................................................... 18
RESET
/Power-On Reset ............................................................18
Readback ..................................................................................... 18
Serial Interface ................................................................................ 19
High Speed I
Serial Bus Address...................................................................... 19
Writing to the ADG2108............................................................... 20
Input Shift Register .................................................................... 20
Write Operation.......................................................................... 22
Read Operation........................................................................... 22
Evaluation Board............................................................................ 24
Using the ADG2108 Evaluation Board ................................... 24
Power Supply............................................................................... 24
Schematics................................................................................... 25
Outline Dimensions....................................................................... 27
Ordering Guide .......................................................................... 27
2
C Interface........................................................... 19
REVISION HISTORY
4/06—Revision 0: Initial Version
Rev. 0 | Page 2 of 28
ADG2108
SPECIFICATIONS
VDD = 12 V ± 10%, VSS = 0 V, VL = 5 V, GND = 0 V, all specifications T
MIN
to T
unless otherwise noted.
MAX,
Table 1.
B Version Y Version
Parameter
+25°C
−40°C to +85°C
+25°C
−40°C to +125°C
Unit Conditions
ANALOG SWITCH
Analog Signal Range VDD − 2 V VDD − 2 V V max On Resistance, RON 30 30 Ω typ VDD = 10.8 V, VIN = 0 V, IS = −10 mA 35 40 35 42 Ω max
32 32 Ω typ VDD = 10.8 V, VIN = 1.4 V, IS = −10 mA 37 42 37 47 Ω max 45 45 Ω typ VDD = 10.8 V, VIN = 5.4 V, IS = −10 mA 50 57 50 62 Ω max
On Resistance Matching 4.5 4.5 Ω typ VDD = 10.8 V, VIN = 0 V, IS = −10 mA
Between Channels, ∆RON 8 9 8 10 Ω max
On Resistance Flatness, R
2.3 2.3 Ω typ VDD = 10.8 V, VIN = 0 V to 1.4 V, IS = −10 mA
FLAT(ON)
3.5 4 3.5 5 Ω max
14.5 14.5 Ω typ VDD = 10.8 V, VIN = 0 V to 5.4 V, IS = −10 mA 18 20 18 22 Ω max
LEAKAGE CURRENTS VDD = 13.2 V
Channel Off Leakage, I
±0.03 ±0.03 μA typ VX = 7 V/1 V, VY = 1 V/7 V
OFF
Channel On Leakage, ION ±0.03 ±0.03 μA typ VX = VY = 1 V or 7 V
DYNAMIC CHARACTERISTICS2
C
11 11 pF typ
OFF
CON 18.5 18.5 pF typ tON 170 170 ns typ RL = 300 Ω, CL = 35 pF 185 190 185 195 ns max t
210 210 ns typ RL = 300 Ω, CL = 35 pF
OFF
250 255 250 260 ns max THD + N 0.04 0.04 % typ
PSRR 90 dB typ
= 10 kΩ, f = 20 Hz to 20 kHz,
R
L
= 1 V p-p
V
S
f = 20 kHz; without decoupling;
see
−3 dB Bandwidth 210 210 MHz typ Individual inputs to outputs
16.5 16.5 MHz typ 8 inputs to 1 output
Off Isolation −69 −69 dB typ RL = 75 Ω, CL = 5 pF, f = 5 MHz Channel-to-Channel Crosstalk RL = 75 Ω, CL = 5 pF, f = 5 MHz
Adjacent Channels −63 −63 dB typ
Nonadjacent Channels −76 −76 dB typ Differential Gain 0.4 0.4 % typ RL = 75 Ω, CL = 5 pF, f = 5 MHz Differential Phase 0.6 0.6 ° typ RL = 75 Ω, CL = 5 pF, f = 5 MHz Charge Injection −3.5 −3.5 pC typ VS = 4 V, RS = 0 Ω, CL = 1 nF
LOGIC INPUTS (Ax, RESET)
Input High Voltage, V Input Low Voltage, V
INL
2
2.0 2.0 V min
INH
0.8 0.8 V max Input Leakage Current, IIN 0.005 0.005 μA typ ±1 ±1 μA max Input Capacitance, CIN 7 7 pF typ
1
Figure 24
Rev. 0 | Page 3 of 28
ADG2108
B Version Y Version
Parameter
+25°C
+85°C
+25°C
LOGIC INPUTS (SCL, SDA)2
−40°C to
Input High Voltage, V V Input Low Voltage, V
0.7 VL 0.7 VL V min
INH
+ 0.3 VL + 0.3 V max
L
−0.3 −0.3 V min
INL
0.3 VL 0.3 VL V max Input Leakage Current, IIN 0.005 0.005 μA typ VIN = 0 V to VL ±1 ±1 μA max Input Hysteresis 0.05 VL 0.05 VL V min Input Capacitance, CIN 7 7 pF typ
LOGIC OUTPUT (SDA)
2
Output Low Voltage, VOL 0.4 0.4 V max I
0.6 0.6 V max I Floating State Leakage Current ±1 ±1 μA max
POWER REQUIREMENTS
IDD 0.05 0.05 μA typ Digital inputs = 0 V or VL 1 1 μA max ISS 0.05 0.05 μA typ Digital inputs = 0 V or VL 1 1 μA max IL Digital inputs = 0 V or VL
Interface Inactive 0.3 0.3 μA typ
2 2 μA max
Interface Active: 400 kHz f
0.1 0.1 mA typ
SCL
0.2 0.2 mA max Interface Active: 3.4 MHz f
0.4 0.4 mA typ -HS model only
SCL
1.2 1.7 mA max
1
Temperature range is as follows: B version: −40°C to +85°C; Y version: −40°C to +125°C.
2
Guaranteed by design, not subject to production test.
−40°C to +125°C
Unit Conditions
= 3 mA
SINK
= 6 mA
SINK
Rev. 0 | Page 4 of 28
ADG2108
VDD = +5 V ± 10%, VSS = −5 V ± 10%, VL = 5 V, GND = 0 V, all specifications T
MIN
to T
, unless otherwise noted.
MAX
Table 2.
B Version Y Version
−40°C to
Parameter +25°C
+125°C
+25°C
−40°C to +125°C
Unit Conditions
ANALOG SWITCH
Analog Signal Range VDD − 2 V V max On Resistance, RON 34 34 Ω typ VDD = +4.5 V, VSS = −4.5 V, VIN = VSS, IS = −10 mA
40 45 40 50 Ω max
50 50 Ω typ VDD = +4.5 V, VSS = −4.5 V, VIN = 0 V, IS = −10 mA 55 65 55 70 Ω max 66 66 Ω typ VDD = +4.5 V, VSS = −4.5 V, VIN = 1.4 V, IS = −10 mA 75 85 75 95 Ω max
On Resistance Matching 4.5 4.5 Ω typ VDD = +4.5 V, VSS = −4.5 V, VIN = VSS, IS = −10 mA
Between Channels, ∆RON 8 9 8 10 Ω max
On Resistance Flatness, R
17 17 Ω typ VDD = +4.5 V, VSS = −4.5 V, VIN = VSS to 0 V, IS = −10 mA
FLAT(ON)
20 23 20 25 Ω max 34 34 Ω typ VDD = +4.5 V, VSS = −4.5 V, VIN = VSS to 1.4 V, IS = −10 mA
42 45 42 48 Ω max
LEAKAGE CURRENTS VDD = 5.5 V, VSS = 5.5 V
Channel Off Leakage, I
±0.03 ±0.03 μA typ VX = +4.5 V/−2 V, VY = −2 V/+4.5 V
OFF
Channel On Leakage, ION ±0.03 ±0.03 μA typ VX = VY = −2 V or +4.5 V
DYNAMIC CHARACTERISTICS
C
6 6 pF typ
OFF
2
CON 9.5 9.5 pF typ tON 170 170 ns typ RL = 300 Ω, CL = 35 pF 200 215 200 220 ns max t
210 210 ns typ RL = 300 Ω, CL = 35 pF
OFF
250 255 250 260 ns max THD + N 0.04 0.04 % typ RL = 10 kΩ, f = 20 Hz to 20 kHz, VS = 1 V p-p PSRR 90 dB typ f = 20 kHz; without decoupling; see Figure 24
−3 dB Bandwidth 300 300 MHz typ Individual inputs to outputs 18 18 MHz typ 8 inputs to 1 output Off Isolation −66 −64 dB typ RL = 75 Ω, CL = 5 pF, f = 5 MHz Channel-to-Channel Crosstalk RL = 75 Ω, CL = 5 pF, f = 5 MHz
Adjacent Channels −62 −62 dB typ
Nonadjacent Channels −79 −79 dB typ Differential Gain 1.5 1.5 % typ RL = 75 Ω, CL = 5 pF, f = 5 MHz Differential Phase 1.8 1.8 ° typ RL = 75 Ω, CL = 5 pF, f = 5 MHz Charge Injection −3 −3 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF
LOGIC INPUTS (Ax, RESET)
Input High Voltage, V Input Low Voltage, V
INL
2
2.0 2.0 V min
INH
0.8 0.8 V max Input Leakage Current, IIN 0.005 0.005 μA typ ±1 ±1 μA max Input Capacitance, CIN 7 7 pF typ
LOGIC INPUTS (SCL, SDA)2
Input High Voltage, V V Input Low Voltage, V
0.7 VL 0.7 VL V min
INH
+ 0.3 VL + 0.3 V max
L
−0.3 −0.3 V min
INL
0.3 VL 0.3 VL V max
1
Rev. 0 | Page 5 of 28
ADG2108
Parameter +25°C
B Version Y Version
−40°C to +125°C
+25°C
−40°C to +125°C
Input Leakage Current, IIN 0.005 0.005 μA typ VIN = 0 V to VL ±1 ±1 μA max Input Hysteresis 0.05 VL 0.05 VL V min Input Capacitance, CIN 7 7 pF typ
LOGIC OUTPUT (SDA)
2
Output Low Voltage, VOL 0.4 0.4 V max I
0.6 0.6 V max I Floating State Leakage Current ±1 ±1 μA max
POWER REQUIREMENTS
IDD 0.05 0.005 μA typ Digital inputs = 0 V or VL 1 1 μA max ISS 0.05 0.005 μA typ Digital inputs = 0 V or VL 1 1 μA max IL Digital inputs = 0 V or VL
Interface Inactive 0.3 0.3 μA typ
2 2 μA max
Interface Active: 400 kHz f
0.1 0.1 mA typ
SCL
0.1 0.1 mA max Interface Active: 3.4 MHz f
0.4 0.4 mA typ -HS model only
SCL
0.3 0.3 mA max
1
Temperature range is as follows: B version: –40°C to +85°C; Y version: –40°C to +125°C.
2
Guaranteed by design, not subject to production test.
Unit Conditions
= 3 mA
SINK
= 6 mA
SINK
Rev. 0 | Page 6 of 28
ADG2108
I2C TIMING SPECIFICATIONS
VDD = 5 V to 12 V; VSS = −5 V to 0 V; VL = 5 V; GND = 0 V; TA = T
Table 3.
ADG2108 Limit at T Parameter1Conditions Min Max Unit Description
f
Standard mode 100 kHz Serial clock frequency
SCL
Fast mode 400 kHz High speed mode C C
= 100 pF maximum 3.4 MHz
B
= 400 pF maximum 1.7 MHz
B
2
t1 Standard mode 4 μs t Fast mode 0.6 μs High speed mode C C
= 100 pF maximum 60 ns
B
= 400 pF maximum 120 ns
B
2
t2 Standard mode 4.7 μs t Fast mode 1.3 μs High speed mode C C
= 100 pF maximum 160 ns
B
= 400 pF maximum 320 ns
B
2
t3 Standard mode 250 ns t Fast mode 100 ns High speed mode
3
t
Standard mode 0 3.45 μs t
4
2
10 ns
Fast mode 0 0.9 μs High speed mode C C
= 100 pF maximum 0 70 ns
B
= 400 pF maximum 0 150 ns
B
2
t5 Standard mode 4.7 μs t Fast mode 0.6 μs High speed mode
2
160 ns t6 Standard mode 4 μs t Fast mode 0.6 μs High speed mode
2
160 ns t7 Standard mode 4.7 μs t Fast mode 1.3 μs t8 Standard mode 4 μs t Fast mode 0.6 μs High speed mode
2
160 ns t9 Standard mode 1000 ns t Fast mode 20 + 0.1 CB 300 ns High speed mode C C
= 100 pF maximum 10 80 ns
B
= 400 pF maximum 20 160 ns
B
2
t10 Standard mode 300 ns t Fast mode 20 + 0.1 CB 300 ns High speed mode C C
= 100 pF maximum 10 80 ns
B
= 400 pF maximum 20 160 ns
B
2
Rev. 0 | Page 7 of 28
MIN
to T
MIN
, T
MAX
, unless otherwise noted (see Figure 2).
MAX
, SCL high time
HIGH
, SCL low time
LOW
, data setup time
SU;DAT
, data hold time
HD;DAT
, setup time for a repeated start condition
SU;STA
, hold time for a repeated start condition
HD;STA
, bus free time between a stop and a start condition
BUF
, setup time for a stop condition
SU;STO
, rise time of SDA signal
RDA
, fall time of SDA signal
FDA
ADG2108
ADG2108 Limit at T Parameter1Conditions Min Max Unit Description
t11 Standard mode 1000 ns t Fast mode 20 + 0.1 CB 300 ns High speed mode C C t
Standard mode 1000 ns t
11A
= 100 pF maximum 10 40 ns
B
= 400 pF maximum 20 80 ns
B
2
Fast mode 20 + 0.1 CB 300 ns condition and after an acknowledge bit High speed mode C C
= 100 pF maximum 10 80 ns
B
= 400 pF maximum 20 160 ns
B
2
t12 Standard mode 300 ns t Fast mode 20 + 0.1 CB 300 ns High speed mode C C
= 100 pF maximum 10 40 ns
B
= 400 pF maximum 20 80 ns
B
2
tSP Fast mode 0 50 ns Pulse width of suppressed spike High speed mode
1
Guaranteed by initial characterization. All values measured with input filtering enabled. CB refers to capacitive load on the bus line; tR and tF are measured between
0.3 VDD and 0.7 VDD.
2
High speed I2C is available only in -HS models.
3
A device must provide a data hold time for SDA to bridge the undefined region of the SCL falling edge.
2
0 10 ns
MIN
, T
MAX
, rise time of SCL signal
RCL
, rise time of SCL signal after a repeated start
RCL1
, fall time of SCL signal
FCL
TIMING DIAGRAM
SCL
SDA
t
7
S
P
S = START CONDI TION P = STOP CO NDITION
t
11
t
2
t
6
t
4
t
12
t
3
t
1
S
t
6
t
5
t
10
t
8
t
9
P
5898-002
Figure 2. Timing Diagram for 2-Wire Serial Interface
Rev. 0 | Page 8 of 28
ADG2108
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 4.
Parameter Rating
VDD to VSS 15 V VDD to GND −0.3 V to +15 V VSS to GND +0.3 V to −7 V VL to GND −0.3 V to +7 V Analog Inputs VSS − 0.3 V to VDD + 0.3 V Digital Inputs
Continuous Current
10 V on Input; Single Input
Connected to Single Output
1 V on Input; Single Input
Connected to Single Output
10 V on Input; Eight Inputs
Connected to Eight Outputs
Operating Temperature Range
Industrial (B Version) –40°C to +85°C
Automotive (Y Version) –40°C to +125°C Storage Temperature Range –65°C to +150°C Junction Temperature 150°C 32-Lead LFCSP_VQ
θJA Thermal Impedance 108.2°C/W Reflow Soldering (Pb Free)
Peak Temperature 260°C (+0/–5) Time at Peak Temperature 10 sec to 40 sec
−0.3 V to V whichever occurs first
65 mA
90 mA
25 mA
+ 0.3 V or 30 mA,
L
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
Rev. 0 | Page 9 of 28
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