ANALOG DEVICES ADG1608, ADG1609 Service Manual

4.5 Ω RON, 4-/8-Channel

S1BS

±5 V,+12 V, +5 V, and +3.3 V Multiplexers

FEATURES

4.5 Ω typical on resistance 1 Ω on-resistance flatness Up to 470 mA continuous current ±3.3 V to ±8 V dual-supply operation

3.3 V to 16 V single-supply operation No V

supply required

L

3 V logic-compatible inputs Rail-to-rail operation 16-lead TSSOP and 16-lead, 3 mm × 3 mm LFCSP

APPLICATIONS

Communication systems Medical systems Audio signal routing Video signal routing Automatic test equipment Data acquisition systems Battery-powered systems Sample-and-hold systems Relay replacements

ADG1608/ADG1609

FUNCTIONAL BLOCK DIAGRAMS

ADG1608

S1

D

S8

1-OF-8

DECODER

A0 A1 A2 EN

Figure 1.

ADG1609

S1A

S4A

4B

1-OF-4

DECODER

DA

DB

08318-001

GENERAL DESCRIPTION

The ADG1608/ADG1609 are monolithic CMOS analog multiplexers comprising eight single channels and four differential channels, respectively. The ADG1608 switches one of eight inputs to a common output, as determined by the 3-bit binary address lines, A0, A1, and A2. The ADG1609 switches one of four differential inputs to a common differential output, as determined by the 2-bit binary address lines, A0 and A1. An EN input on both devices is used to enable or disable the device. When disabled, all channels are switched off.

Each switch conducts equally well in both directions when on and has an input signal range that extends to the supplies. In the off condition, signal levels up to the supplies are blocked. All switches exhibit break-before-make switching action. Inherent in the design is low charge injection for minimum transients when switching the digital inputs.

Rev. 0

Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.

A0 A1 EN

Figure 2.

08318-002

The low on resistance of these switches make them ideal solutions for data acquisition and gain switching applications where low on resistance and distortion is critical. The on-resistance profile is very flat over the full analog input range, ensuring excellent linearity and low distortion when switching audio signals.

CMOS construction ensures ultralow power dissipation, making the parts ideally suited for portable and batterypowered instruments.

PRODUCT HIGHLIGHTS

1. 8 Ω maximum on resistance over temperature.

2. Minimum distortion: THD + N = 0.04%

3. 3 V logic-compatible digital inputs: V

4. No V

logic power supply required.

L

5. Ultralow power dissipation: <8 nW.

6. 16-lead TSSOP and 16-lead, 3 mm × 3 mm LFCSP.

= 2.0 V, V

INH

= 0.8 V.

INL

ADG1608/ADG1609

REVISION HISTORY

7/09—Revision 0: Initial Version

Continuous Current per Channel, S or D ..................................7

Absolute Maximum Ratings ............................................................8

ESD Caution...................................................................................8

Pin Configurations and Function Descriptions ............................9

Typical Performance Characteristics ........................................... 11

Test Circuits ..................................................................................... 14

Terminolog y .................................................................................... 17

Outline Dimensions ....................................................................... 18

Ordering Guide .......................................................................... 18

Rev. 0 | Page 2 of 20

ADG1608/ADG1609

SPECIFICATIONS

±5 V DUAL SUPPLY

VDD = +5 V ± 10%, VSS = −5 V ± 10%, GND = 0 V, unless otherwise noted.

Table 1.

−40°C to

Parameter 25°C

+85°C

ANALOG SWITCH

Analog Signal Range VDD to VSS V On Resistance (RON) 4.5 Ω typ VS = ±4.5 V, IS = −10 mA; see Figure 25 5 7 8 Ω max VDD = ±4.5 V, VSS = ±4.5 V On-Resistance Match Between Channels (∆RON) 0.12 Ω typ VS = ±4.5 V, IS = −10 mA

0.25 0.3 0.35 Ω max

On-Resistance Flatness (R

) 1 Ω typ VS = ±4.5 V, IS = −10 mA

FLAT(ON)

1.3 1.7 2 Ω max LEAKAGE CURRENTS VDD = +5.5 V, VSS = −5.5 V

Source Off Leakage, IS (Off) ±0.02 nA typ

±0.1 ±0.5 ±3 nA max Drain Off Leakage, ID (Off) ±0.03 nA typ

ADG1608 ±0.15 ±2 ±14 nA max ADG1609 ±0.15 ±1 ±7 nA max

Channel On Leakage, ID, IS (On) ±0.03 nA typ VS = VD = ±4.5 V; see Figure 27 ±0.15 ±2 ±14 nA max DIGITAL INPUTS

Input High Voltage, V

Input Low Voltage, V

Input Current, I

2.0 V min

INH

0.8 V max

INL

or I

±1 nA typ VIN = V

INL

INH

±0.1 μA max

Digital Input Capacitance, CIN 4 pF typ DYNAMIC CHARACTERISTICS1

Transition Time, t

150 ns typ RL = 300 Ω, CL = 35 pF

TRANSITION

182 230 258 ns max VS = 2.5 V; see Figure 28

tON (EN) 106 ns typ RL = 300 Ω, CL = 35 pF

132 150 160 ns max VS = 2.5 V; see Figure 30

t

(EN) 113 ns typ RL = 300 Ω, CL = 35 pF

OFF

144 178 202 ns max VS = 2.5 V; see Figure 30

Break-Before-Make Time Delay, tD 47 ns typ RL = 300 Ω, CL = 35 pF

30 ns min VS1 = VS2 = 2.5 V; see Figure 29 Charge Injection 24 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF; see Figure 31 Off Isolation −64 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 32 Channel-to-Channel Crosstalk −64 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 34 Total Harmonic Distortion + Noise (THD + N) 0.04 % typ RL = 110 Ω, VS = 5 V p-p, f = 20 Hz to 20 kHz; see Figure 35

−3 dB Bandwidth RL = 50 Ω, CL = 5 pF; see Figure 33

ADG1608 40 MHz typ

ADG1609 71 MHz typ CS (Off) 20 pF typ VS = 0 V, f = 1 MHz CD (Off)

ADG1608 120 pF typ VS = 0 V, f = 1 MHz

ADG1609 61 pF typ VS = 0 V, f = 1 MHz CD, CS (On)

ADG1608 153 pF typ VS = 0 V, f = 1 MHz

ADG1609 85 pF typ VS = 0 V, f = 1 MHz

POWER REQUIREMENTS VDD = +5.5 V, VSS = −5.5 V

IDD 0.001 μA typ Digital inputs = 0 V or VDD

1.0 μA max VDD/VSS ±3.3/±8 V min/max

1

Guaranteed by design, but not subject to production test.

−40°C to +125°C

Unit Test Conditions/Comments

V

= ±4.5 V, VD = ∓4.5 V; see Figure 26

S

V

= ±4.5 V, VD = ∓4.5 V; see Figure 26

S

or VDD

GND

Rev. 0 | Page 3 of 20

ADG1608/ADG1609

12 V SINGLE SUPPLY

VDD = 12 V ± 10%, VSS = 0 V, GND = 0 V, unless otherwise noted.

Table 2.

Parameter 25°C

+85°C

ANALOG SWITCH

Analog Signal Range 0 V to VDD V On Resistance (RON) 4 Ω typ VS = 0 V to 10 V, IS = −10 mA; see Figure 25

4.5 6.5 7.5 Ω max VDD = 10.8 V, VSS = 0 V On-Resistance Match Between Channels (∆RON) 0.12 Ω typ VS = 10 V, IS = −10 mA

0.25 0.3 0.35 Ω max

−40°C to

On-Resistance Flatness (R

) 0.9 Ω typ VS = 0 V to 10 V, IS = −10 mA

FLAT(ON)

1.2 1.6 1.9 Ω max

LEAKAGE CURRENTS VDD = 13.2 V, VSS = 0 V

Source Off Leakage, IS (Off) ±0.02 nA typ VS = 1 V/10 V, VD = 10 V/1 V; see Figure 26 ±0.1 ±0.5 ±3 nA max Drain Off Leakage, ID (Off) ±0.03 nA typ VS = 1 V/10 V, VD = 10 V/1 V; see Figure 26

ADG1608 ±0.15 ±2 ±14 nA max ADG1609 ±0.15 ±1 ±7 nA max

Channel On Leakage, ID, IS (On) ±0.03 nA typ VS = VD = 1 V or 10 V; see Figure 27 ±0.15 ±2 ±14 nA max DIGITAL INPUTS

Input High Voltage, V

Input Low Voltage, V

Input Current, I

2.0 V min

INH

0.8 V max

INL

or I

±1 nA typ VIN = V

INL

INH

±0.1 μA max

Digital Input Capacitance, CIN 4 pF typ DYNAMIC CHARACTERISTICS1

Transition Time, t

113 ns typ RL = 300 Ω, CL = 35 pF

TRANSITION

141 172 196 ns max VS = 8 V; see Figure 28

tON (EN) 80 ns typ RL = 300 Ω, CL = 35 pF

94 101 110 ns max VS = 8 V; see Figure 30

t

(EN) 77 ns typ RL = 300 Ω, CL = 35 pF

OFF

93 117 140 ns max VS = 8 V; see Figure 30

Break-Before-Make Time Delay, tD 47 ns typ RL = 300 Ω, CL = 35 pF

30 ns min VS1 = VS2 = 8 V; see Figure 29 Charge Injection 29 pC typ VS = 6 V, RS = 0 Ω, CL = 1 nF; see Figure 31 Off Isolation −64 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 32 Channel-to-Channel Crosstalk −64 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 34 Total Harmonic Distortion + Noise (THD + N) 0.04 % typ RL = 110 Ω, VS = 5 V p-p, f = 20 Hz to 20 kHz; see Figure 35

−3 dB Bandwidth RL = 50 Ω, CL = 5 pF; see Figure 33

ADG1608 40 MHz typ

ADG1609 78 MHz typ CS (Off) 19 pF typ VS = 6 V, f = 1 MHz CD (Off)

ADG1608 117 pF typ VS = 6 V, f = 1 MHz

ADG1609 59 pF typ VS = 6 V, f = 1 MHz CD, CS (On)

ADG1608 149 pF typ VS = 6 V, f = 1 MHz

ADG1609 84 pF typ VS = 6 V, f = 1 MHz

POWER REQUIREMENTS VDD = 12 V

IDD 0.001 μA typ Digital inputs = 0 V or VDD

1.0 μA max

ADG1608 300 μA typ Digital inputs = 5 V

480 μA max

ADG1609 225 μA typ Digital inputs = 5 V 360 μA max VDD 3.3/16 V min/max

1

Guaranteed by design, but not subject to production test.

−40°C to +125°C Unit Test Conditions/Comments

or VDD

GND

Rev. 0 | Page 4 of 20

ADG1608/ADG1609

5 V SINGLE SUPPLY

VDD = 5 V ± 10%, VSS = 0 V, GND = 0 V, unless otherwise noted.

Table 3.

−40°Cto

Parameter 25°C

+85°C

ANALOG SWITCH

Analog Signal Range 0 V to VDD V On Resistance (RON) 8.5 Ω typ VS = 0 V to 4.5 V, IS = −10 mA; see Figure 25 10 12.5 14 Ω max VDD = 4.5 V, VSS = 0 V On-Resistance Match Between Channels (∆RON) 0.15 Ω typ VS = 0 V to 4.5 V, IS = −10 mA

0.3 0.35 0.4 Ω max

On-Resistance Flatness (R

) 1.7 Ω typ VS = 0 V to 4.5 V, IS = −10 mA

FLAT(ON)

2.3 2.7 3 Ω max

LEAKAGE CURRENTS VDD = 5.5 V, VSS = 0 V

Source Off Leakage, IS (Off) ±0.01 nA typ VS = 1 V/4.5 V, VD = 4.5 V/1 V; see Figure 26 ±0.1 ±0.5 ±3 nA max Drain Off Leakage, ID (Off) ±0.01 nA typ VS = 1 V/4.5 V, VD = 4.5 V/1 V; see Figure 26

ADG1608 ±0.15 ±2 ±14 nA max ADG1609 ±0.15 ±1 ±7 nA max

Channel On Leakage, ID, IS (On) ±0.01 nA typ VS = VD = 1 V or 4.5 V; see Figure 27 ±0.15 ±2 ±14 nA max DIGITAL INPUTS

Input High Voltage, V

Input Low Voltage, V

Input Current, I

2.0 V min

INH

0.8 V max

INL

or I

±1 nA typ VIN = V

INL

INH

±0.1 μA max

Digital Input Capacitance, CIN 4 pF typ DYNAMIC CHARACTERISTICS1

Transition Time, t

193 ns typ RL = 300 Ω, CL = 35 pF

TRANSITION

251 301 339 ns max VS = 2.5 V; see Figure 28

tON (EN) 115 ns typ RL = 300 Ω, CL = 35 pF

152 171 184 ns max VS = 2.5 V; see Figure 30

t

(EN) 140 ns typ RL = 300 Ω, CL = 35 pF

OFF

184 225 259 ns max VS = 2.5 V; see Figure 30

Break-Before-Make Time Delay, tD 66 ns typ RL = 300 Ω, CL = 35 pF

37 ns min VS1 = VS2 = 2.5 V; see Figure 29 Charge Injection 11 pC typ VS = 2.5 V, RS = 0 Ω, CL = 1 nF; see Figure 31 Off Isolation −64 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz; see Figure 32 Channel-to-Channel Crosstalk −64 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz; see Figure 34 Total Harmonic Distortion + Noise (THD + N) 0.3 % typ RL = 110 Ω, f = 20 Hz to 20 kHz, VS = 3.5 V p-p; se e Figure 35

−3 dB Bandwidth RL = 50 Ω, CL = 5 pF; see Figure 33

ADG1608 37 MHz typ

ADG1609 72 MHz typ CS (Off) 22 pF typ VS = 2.5 V, f = 1 MHz CD (Off) VS = 2.5 V, f = 1 MHz

ADG1608 136 pF typ

ADG1609 68 pF typ CD, CS (On) VS = 2.5 V, f = 1 MHz

ADG1608 168 pF typ

ADG1609 94 pF typ

POWER REQUIREMENTS VDD = 5.5 V

IDD 0.001 μA typ Digital inputs = 0 V or VDD

1.0 μA max VDD 3.3/16 V min/max

1

Guaranteed by design, but not subject to production test.

−40°C to +125°C

Unit Test Conditions/Comments

or VDD

GND

Rev. 0 | Page 5 of 20

ADG1608/ADG1609

3.3 V SINGLE SUPPLY

VDD = 3.3 V, VSS = 0 V, GND = 0 V, unless otherwise noted.

Table 4.

−40°C to

Parameter 25°C

+85°C

ANALOG SWITCH

Analog Signal Range 0 V to VDD V On Resistance (RON) 13.5 15 16.5 Ω typ VS = 0 V to VDD, IS = −10 mA; see Figure 25, VDD = 3.3 V,

On-Resistance Match Between Channels (∆RON) 0.25 0.28 0.3 Ω typ VS = 0 V to VDD, IS = −10 mA On-Resistance Flatness (R

) 5 5.5 6.5 Ω typ VS = 0 V to VDD, IS = −10 mA

FLAT(ON)

LEAKAGE CURRENTS VDD = 3.6 V, VSS = 0 V

Source Off Leakage, IS (Off) ±0.01 nA typ VS = 0.6 V/3 V, VD = 3 V/0.6 V; see Figure 26 ±0.1 ±0.5 ±3 nA max Drain Off Leakage, ID (Off) ±0.01 nA typ VS = 0.6 V/3 V, VD = 3 V/0.6 V; see Figure 26

ADG1608 ±0.15 ±2 ±14 nA max ADG1609 ±0.15 ±1 ±7 nA max

Channel On Leakage, ID, IS (On) ±0.01 nA typ VS = VD = 0.6 V or 3 V; see Figure 27 ±0.15 ±2 ±14 nA max DIGITAL INPUTS

Input High Voltage, V

Input Low Voltage, V

Input Current, I

2.0 V min

INH

0.8 V max

INL

or I

±1 nA typ VIN = V

INL

INH

±0.1 μA max

Digital Input Capacitance, CIN 4 pF typ DYNAMIC CHARACTERISTICS1

Transition Time, t

312 ns typ RL = 300 Ω, CL = 35 pF

TRANSITION

437 498 542 ns max VS = 1.5 V; see Figure 28

tON (EN) 216 ns typ RL = 300 Ω, CL = 35 pF

309 331 344 ns max VS = 1.5 V; see Figure 30

t

(EN) 236 ns typ RL = 300 Ω, CL = 35 pF

OFF

316 367 411 ns max VS = 1.5 V; see Figure 30

Break-Before-Make Time Delay, tD 104 ns typ RL = 300 Ω, CL = 35 pF

48 ns min VS1 = VS2 = 1.5 V; see Figure 29 Charge Injection 6 pC typ VS = 1.5 V, RS = 0 Ω, CL = 1 nF; see Figure 31 Off Isolation −64 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz; see Figure 32 Channel-to-Channel Crosstalk −64 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz; see Figure 34 Total Harmonic Distortion + Noise (THD + N) 0.5 % typ RL = 110 Ω, f = 20 Hz to 20 kHz, VS = 2 V p-p; see Figure 35

−3 dB Bandwidth RL = 50 Ω, CL = 5 pF; see Figure 33

ADG1608 34 MHz typ

ADG1609 72 MHz typ CS (Off) 23 pF typ VS = 1.5 V, f = 1 MHz CD (Off) VS = 1.5 V, f = 1 MHz

ADG1608 145 pF typ

ADG1609 72 pF typ CD, CS (On) VS = 1.5 V, f = 1 MHz

ADG1608 173 pF typ

ADG1609 95 pF typ

POWER REQUIREMENTS VDD = 3.6 V

IDD 0.001 μA typ Digital inputs = 0 V or VDD

1.0 μA max VDD 3.3/16 V min/max

1

Guaranteed by design, but not subject to production test.

−40°C to +125°C

Unit Test Conditions/Comments

= 0 V

V

SS

or VDD

GND

Rev. 0 | Page 6 of 20

ANALOG DEVICES ADG1608, ADG1609 Service Manual

FEATURES

APPLICATIONS

FUNCTIONAL BLOCK DIAGRAMS

GENERAL DESCRIPTION

PRODUCT HIGHLIGHTS

TABLE OF CONTENTS

REVISION HISTORY

SPECIFICATIONS

±5 V DUAL SUPPLY

12 V SINGLE SUPPLY

5 V SINGLE SUPPLY

3.3 V SINGLE SUPPLY