ANALOG DEVICES ADG1604 Service Manual

1 Ω Typical On Resistance, ±5 V,

FEATURES

1 Ω typical on resistance

0.2 Ω on resistance flatness ±3.3 V to ±8 V dual-supply operation

3.3 V to 16 V single-supply operation No V

supply required

L

3 V logic-compatible inputs Rail-to-rail operation Continuous current per channel

LFCSP package: 504 mA TSSOP package: 315 mA

14-lead TSSOP and 16-lead, 4 mm × 4 mm LFCSP

APPLICATIONS

Communication systems Medical systems Audio signal routing Video signal routing Automatic test equipment Data acquisition systems Battery-powered systems Sample-and-hold systems Relay replacements

+12 V, +5 V, and +3.3 V, 4:1 Multiplexer

ADG1604

FUNCTIONAL BLOCK DIAGRAM

S1

S2

S3

S4

ADG1604

1 OF 4

DECODER

Figure 1.

D

ENA1A0

07982-001

GENERAL DESCRIPTION

The ADG1604 is a complementary metal-oxide semiconductor (CMOS) analog multiplexer and switches one of four inputs to a common output, D, as determined by the 3-bit binary address lines, A0, A1, and EN. Logic 0 on the EN pin disables the device. Each switch conducts equally well in both directions when on and has an input signal range that extends to the supplies. In the off condition, signal levels up to the supplies are blocked. All switches exhibit break-before-make switching action. Inherent in the design is low charge injection for minimum transients when switching the digital inputs.

The ultralow on resistance of these switches make them ideal solutions for data acquisition and gain switching applications where low on resistance and distortion is critical. The on resistance profile is very flat over the full analog input range, ensuring excellent linearity and low distortion when switching audio signals.

Rev. A

Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.

The CMOS construction ensures ultralow power dissipation, making the parts ideally suited for portable and batterypowered instruments.

PRODUCT HIGHLIGHTS

1. 1.6 Ω maximum on resistance over temperature.

2. Minimum distortion: THD + N = 0.007%.

3. 3 V logic-compatible digital inputs: V

4. No V

logic power supply required.

L

5. Ultralow power dissipation: <16 nW.

6. 14-lead TSSOP and 16-lead, 4 mm × 4 mm LFCSP.

= 2.0 V, V

INH

= 0.8 V.

INL

ADG1604

REVISION HISTORY

9/09—Rev. 0 to Rev. A

Changes to On Resistance (R Match Between Channels (ΔR Flatness (R

1/09—Revision 0: Initial Version

) Parameter, Table 4 ............................................. 6

FLATON

) Parameter, On Resistance

ON

) Parameter, and On Resistance

ON

Continuous Current per Channel, S or D ..................................7

Absolute Maximum Ratings ............................................................8

ESD Caution...................................................................................8

Pin Configurations and Function Descriptions ............................9

Typical Performance Characteristics ........................................... 10

Test Circuits ..................................................................................... 13

Terminology .................................................................................... 16

Outline Dimensions ....................................................................... 17

Ordering Guide .......................................................................... 17

Rev. A | Page 2 of 20

ADG1604

SPECIFICATIONS

±5 V DUAL SUPPLY

VDD = +5 V ± 10%, VSS = −5 V ± 10%, GND = 0 V, unless otherwise noted.

Table 1.

−40°C to

Parameter 25°C

+85°C

ANALOG SWITCH

Analog Signal Range VDD to VSS V On Resistance (RON) 1 Ω typ VS = ±4.5 V, IS = −10 mA; see Figure 22

1.2 1.4 1.6 Ω max VDD = ±4.5 V, VSS = ±4.5 V On Resistance Match Between Channels (∆RON) 0.04 Ω typ VS = ±4.5 V, IS = −10 mA

0.08 0.09 0.1 Ω max

On Resistance Flatness (R

) 0.2 Ω typ VS = ±4.5 V, IS = −10 mA

FLAT(ON)

0.25 0.29 0.34 Ω max LEAKAGE CURRENTS VDD = +5.5 V, VSS = −5.5 V

Source Off Leakage, IS (Off) ±0.1 nA typ

±0.2 ±1 ±8 nA max Drain Off Leakage, ID (Off) ±0.1 nA typ

±0.2 ±2 ±16 nA max

Channel On Leakage, ID, IS (On) ±0.2 nA typ VS = VD = ±4.5 V; see Figure 24 ±0.4 ±2 ±16 nA max DIGITAL INPUTS

Input High Voltage, V

Input Low Voltage, V

Input Current, I

INL

2.0 V min

INH

0.8 V max

INL

or I

0.005 μA typ VIN = V

INH

±0.1 μA max

Digital Input Capacitance, CIN 8 pF typ DYNAMIC CHARACTERISTICS1

Transition Time, t

150 ns typ RL = 300 Ω, CL = 35 pF

TRANSITION

278 336 376 ns max VS = 2.5 V; see Figure 29

tON (EN) 116 ns typ RL = 300 Ω, CL = 35 pF

146 166 177 ns max VS = 2.5 V; see Figure 31

t

(EN) 186 ns typ RL = 300 Ω, CL = 35 pF

OFF

234 277 310 ns max VS = 2.5 V; see Figure 31

Break-Before-Make Time Delay, tD 50 ns typ RL = 300 Ω, CL = 35 pF

28.5 ns min VS1 = VS2 = 2.5 V; see Figure 30 Charge Injection 140 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF; see Figure 32 Off Isolation 70 dB typ

Channel-to-Channel Crosstalk 70 dB typ

Total Harmonic Distortion + Noise (THD + N) 0.007 % typ

−3 dB Bandwidth 15 MHz typ RL = 50 Ω, CL = 5 pF; see Figure 26 CS (Off) 63 pF typ VS = 0 V, f = 1 MHz CD (Off) 270 pF typ VS = 0 V, f = 1 MHz CD, CS (On) 360 pF typ VS = 0 V, f = 1 MHz

POWER REQUIREMENTS VDD = +5.5 V, VSS = −5.5 V

IDD 0.001 μA typ Digital inputs = 0 V or VDD

1.0 μA max VDD/VSS ±3.3/±8 V min/max

1

Guaranteed by design, not subject to production test.

−40°C to +125°C Unit Test Conditions/Comments

= ±4.5 V, VD = ∓4.5 V; see Figure 23

V

S

= ±4.5V, VD = ∓4.5 V; see Figure 23

V

S

or VDD

GND

= 50 Ω, CL = 5 pF, f = 1 MHz;

R

L

see Figure 25

= 50 Ω, CL = 5 pF, f = 1 MHz;

R

L

see Figure 27

= 110 Ω, 5 V p-p, f = 20 Hz to 20 kHz;

R

L

see Figure 28

Rev. A | Page 3 of 20

ADG1604

12 V SINGLE SUPPLY

VDD = 12 V ± 10%, VSS = 0 V, GND = 0 V, unless otherwise noted.

Table 2.

−40°C to

Parameter 25°C

+85°C

ANALOG SWITCH

Analog Signal Range 0 V to VDD V On Resistance (RON) 0.95 Ω typ VS = 0 V to 10 V, IS = −10 mA; see Figure 22

1.1 1.25 1.45 Ω max VDD = 10.8 V, VSS = 0 V On Resistance Match Between Channels (∆RON) 0.03 Ω typ VS = 10 V, IS = −10 mA

0.06 0.07 0.08 Ω max

On Resistance Flatness (R

) 0.2 Ω typ VS = 0 V to 10 V, IS = −10 mA

FLAT(ON)

0.23 0.27 0.32 Ω max

LEAKAGE CURRENTS VDD = 13.2 V, VSS = 0 V

Source Off Leakage, IS (Off) ±0.1 nA typ VS = 1 V/10 V, VD = 10 V/1 V; see Figure 23 ±0.2 ±1 ±8 nA max Drain Off Leakage, ID (Off) ±0.1 nA typ VS = 1 V/10 V, VD = 10 V/1 V; see Figure 23 ±0.2 ±2 ±16 nA max

Channel On Leakage, ID, IS (On) ±0.2 nA typ VS = VD = 1 V or 10 V; see Figure 24 ±0.4 ±2 ±16 nA max DIGITAL INPUTS

Input High Voltage, V

Input Low Voltage, V

Input Current, I

INL

2.0 V min

INH

0.8 V max

INL

or I

0.001 μA typ VIN = V

INH

±0.1 μA max

Digital Input Capacitance, CIN 8 pF typ DYNAMIC CHARACTERISTICS1

Transition Time, t

100 ns typ RL = 300 Ω, CL = 35 pF

TRANSITION

161 192 220 ns max VS = 8 V; see Figure 29

tON (EN) 80 ns typ RL = 300 Ω, CL = 35 pF

95 104 111 ns max VS = 8 V; see Figure 31

t

(EN) 144 ns typ RL = 300 Ω, CL = 35 pF

OFF

173 205 234 ns max VS = 8 V; see Figure 31

Break-Before-Make Time Delay, tD 25 ns typ RL = 300 Ω, CL = 35 pF

18 ns min VS1 = VS2 = 8 V; see Figure 30 Charge Injection 125 pC typ VS = 6 V, RS = 0 Ω, CL = 1 nF; see Figure 32 Off Isolation 70 dB typ

Channel-to-Channel Crosstalk 70 dB typ

Total Harmonic Distortion + Noise 0.013 % typ

−3 dB Bandwidth 19 MHz typ RL = 50 Ω, CL = 5 pF; see Figure 26 CS (Off) 60 pF typ VS = 6 V, f = 1 MHz CD (Off) 270 pF typ VS = 6 V, f = 1 MHz CD, CS (On) 350 pF typ VS = 6 V, f = 1 MHz

POWER REQUIREMENTS VDD = 12 V

IDD 0.001 μA typ Digital inputs = 0 V or VDD 1 μA max IDD 230 μA typ Digital inputs = 5 V 360 μA max VDD 3.3/16 V min/max

1

Guaranteed by design, not subject to production test.

Rev. A | Page 4 of 20

−40°C to +125°C Unit Test Conditions/Comments

or VDD

GND

= 50 Ω, CL = 5 pF, f = 1 MHz;

R

L

see Figure 25

= 50 Ω, CL = 5 pF, f = 1 MHz;

R

L

see Figure 27

= 110 Ω, 5 V p-p, f = 20 Hz to 20 kHz;

R

L

see Figure 28

ADG1604

5 V SINGLE SUPPLY

VDD = 5 V ± 10%, VSS = 0 V, GND = 0 V, unless otherwise noted.

Table 3.

−40°C to

Parameter 25°C

+85°C

ANALOG SWITCH

Analog Signal Range 0 V to VDD V On Resistance (RON) 1.7 Ω typ VS = 0 V to 4.5 V, IS = −10 mA; see Figure 22

2.15 2.4 2.7 Ω max VDD = 4.5 V, VSS = 0 V On Resistance Match Between Channels (∆RON) 0.05 Ω typ VS = 0 V to 4.5 V, IS = −10 mA

0.09 0.12 0.15 Ω max

On Resistance Flatness (R

) 0.4 Ω typ VS = 0 V to 4.5 V, IS = −10 mA

FLAT(ON)

0.53 0.55 0.6 Ω max

LEAKAGE CURRENTS VDD = 5.5 V, VSS = 0 V

Source Off Leakage, IS (Off) ±0.05 nA typ VS = 1 V/4.5 V, VD = 4.5 V/1 V; see Figure 23 ±0.2 ±1 ±8 nA max Drain Off Leakage, ID (Off) ±0.05 nA typ VS = 1 V/4.5 V, VD = 4.5 V/1 V; see Figure 23 ±0.2 ±2 ±16 nA max

Channel On Leakage, ID, IS (On) ±0.1 nA typ VS = VD = 1 V or 4.5 V; see Figure 24 ±0.4 ±2 ±16 nA max DIGITAL INPUTS

Input High Voltage, V

Input Low Voltage, V

Input Current, I

INL

2.0 V min

INH

0.8 V max

INL

or I

0.001 μA typ VIN = V

INH

±0.1 μA max

Digital Input Capacitance, CIN 8 pF typ DYNAMIC CHARACTERISTICS1

Transition Time, t

175 ns typ RL = 300 Ω, CL = 35 pF

TRANSITION

283 337 380 ns max VS = 2.5 V; see Figure 29

tON (EN) 135 ns typ RL = 300 Ω, CL = 35 pF

174 194 212 ns max VS = 2.5 V; see Figure 31

t

(EN) 228 ns typ RL = 300 Ω, CL = 35 pF

OFF

288 342 385 ns max VS = 2.5 V; see Figure 31

Break-Before-Make Time Delay, tD 30 ns typ RL = 300 Ω, CL = 35 pF

21 ns min VS1 = VS2 = 2.5 V; see Figure 30 Charge Injection 70 pC typ VS = 2.5 V, RS = 0 Ω, CL = 1 nF; see Figure 32 Off Isolation 70 dB typ

Channel-to-Channel Crosstalk 70 dB typ

Total Harmonic Distortion + Noise 0.09 % typ

−3 dB Bandwidth 16 MHz typ RL = 50 Ω, CL = 5 pF; see Figure 26 CS (Off) 70 pF typ VS = 2.5 V, f = 1 MHz CD (Off) 300 pF typ VS = 2.5 V, f = 1 MHz CD, CS (On) 400 pF typ VS = 2.5 V, f = 1 MHz

POWER REQUIREMENTS VDD = 5.5 V

IDD 0.001 μA typ Digital inputs = 0 V or VDD 1 μA max VDD 3.3/16 V min/max

1

Guaranteed by design, not subject to production test.

Rev. A | Page 5 of 20

−40°C to +125°C Unit Test Conditions/Comments

or VDD

GND

= 50 Ω, CL = 5 pF, f = 100 kHz;

R

L

see Figure 25

= 50 Ω, CL = 5 pF, f = 100 kHz;

R

L

see Figure 27

= 110 Ω, f = 20 Hz to 20 kHz, VS = 3.5 V p-p;

R

L

see Figure 28

ADG1604

3.3 V SINGLE SUPPLY

VDD = 3.3 V, VSS = 0 V, GND = 0 V, unless otherwise noted.

Table 4.

−40°C to

Parameter 25°C

+85°C

ANALOG SWITCH

Analog Signal Range 0 V to VDD V On Resistance (RON) 3.2 3.4 3.6 Ω typ

On Resistance Match Between Channels (∆RON) 0.06 0.07 0.08 Ω typ VS = 0 V to VDD, IS = −10 mA On Resistance Flatness (R

) 1.2 1.3 1.4 Ω typ VS = 0 V to VDD, IS = −10 mA

FLAT(ON)

LEAKAGE CURRENTS VDD = 3.6 V, VSS = 0 V

Source Off Leakage, IS (Off) ±0.02 nA typ VS = 0.6 V/3 V, VD = 3 V/0.6 V; see Figure 23 ±0.25 ±1 ±8 nA max Drain Off Leakage, ID (Off) ±0.02 nA typ VS = 0.6 V/3 V, VD = 3 V/0.6 V; see Figure 23 ±0.25 ±2 ±16 nA max

Channel On Leakage, ID, IS (On) ±0.05 nA typ VS = VD = 0.6 V or 3 V; see Figure 24 ±0.6 ±2 ±16 nA max DIGITAL INPUTS

Input High Voltage, V

Input Low Voltage, V

Input Current, I

INL

2.0 V min

INH

0.8 V max

INL

or I

0.001 μA typ VIN = V

INH

±0.1 μA max

Digital Input Capacitance, CIN 8 pF typ DYNAMIC CHARACTERISTICS1

Transition Time, t

280 ns typ RL = 300 Ω, CL = 35 pF

TRANSITION

460 526 575 ns max VS = 1.5 V; see Figure 29

tON (EN) 227 ns typ RL = 300 Ω, CL = 35 pF

308 332 346 ns max VS = 1.5 V; see Figure 31

t

(EN) 357 ns typ RL = 300 Ω, CL = 35 pF

OFF

480 549 601 ns max VS = 1.5 V; see Figure 31

Break-Before-Make Time Delay, tD 25 ns typ RL = 300 Ω, CL = 35 pF

20 ns min VS1 = VS2 = 1.5 V; see Figure 30 Charge Injection 60 pC typ VS = 1.5 V, RS = 0 Ω, CL = 1 nF; see Figure 32 Off Isolation 70 dB typ

Channel-to-Channel Crosstalk 70 dB typ

Total Harmonic Distortion + Noise 0.15 % typ

−3 dB Bandwidth 15 MHz typ RL = 50 Ω, CL = 5 pF; see Figure 26 CS (Off) 76 pF typ VS = 1.5 V, f = 1 MHz CD (Off) 316 pF typ VS = 1.5 V, f = 1 MHz CD, CS (On) 420 pF typ VS = 1.5 V, f = 1 MHz

POWER REQUIREMENTS VDD = 3.6 V

IDD 0.001 μA typ Digital inputs = 0 V or VDD

1.0 1.0 μA max VDD 3.3/16 V min/max

1

Guaranteed by design, not subject to production test.

−40°C to +125°C Unit Test Conditions/Comments

= 0 V to VDD, IS = −10 mA, VDD = 3.3 V,

V

S

= 0 V; see Figure 22

V

SS

or VDD

GND

= 50 Ω, CL = 5 pF, f = 100 kHz;

R

L

see Figure 25

= 50 Ω, CL = 5 pF, f = 100 kHz;

R

L

see Figure 27

= 110 Ω, f = 20 Hz to 20 kHz, VS = 2 V p-p;

R

L

see Figure 28

Rev. A | Page 6 of 20

ANALOG DEVICES ADG1604 Service Manual

FEATURES

APPLICATIONS

FUNCTIONAL BLOCK DIAGRAM

GENERAL DESCRIPTION

PRODUCT HIGHLIGHTS

TABLE OF CONTENTS

REVISION HISTORY

SPECIFICATIONS

±5 V DUAL SUPPLY

12 V SINGLE SUPPLY

5 V SINGLE SUPPLY

3.3 V SINGLE SUPPLY