200mA continious current
33 V supply range
Fully specified at +12 V, ±15 V, ±5 V
supply required
No V
L
3 V logic-compatible inputs
Rail-to-rail operation
16-lead TSSOP and 16-lead LFCSP packages
APPLICATIONS
Automatic test equipment
Data aquisition systems
Battery-powered systems
Sample-and-hold systems
Audio signal routing
Communication systems
Relay Replacement
ADG1436
FUNCTIONAL BLOCK DIAGRAM
ADG1436
S1A
S1B
IN1
IN2
S2A
S2B
SWITCHES SHOWN FOR A LOGIC "1" INPUT
Figure 1.TSSOP package
ADG1436
S1A
D1
S1B
LOGIC
D1
D2
S2A
D2
S2B
GENERAL DESCRIPTION
The ADG1436 is a monolithic CMOS device containing two
independently selectable SPDT switches. An EN input on the
LFCSP package is used to enable or disable the device. When
disabled, all channels are switched off. Each switch conducts
equally well in both directions when on and has an input signal
range that extends to the supplies. In the off condition, signal
levels up to the supplies are blocked. Both switches exhibit
break-before-make switching action for use in multiplexer
applications.
It is designed on an iCMOS process. iCMOS (industrialCMOS) is a modular manufacturing process combining high
voltage CMOS (complementary metal-oxide semiconductor)
and bipolar technologies. It enables the development of a wide
range of high performance analog ICs capable of 33 V operation
in a footprint that no previous generation of high voltage parts
has been able to achieve. Unlike analog ICs using conventional
CMOS processes, iCMOS components can tolerate high supply
Rev. PrC
Information furnished by Analog Devices is believed to be accurate and reliable.
However, no responsibility is assumed by Analog Devices for its use, nor for any
infringements of patents or other rights of third parties that may result from its use.
Specifications subject to change without notice. No license is granted by implication
or otherwise under any patent or patent rights of Anal og Devices. Trademarks and
registered trademarks are the property of their respective owners.
IN1IN2
SWITCHES SHOWN FOR A “1” INPUT LOGIC
Figure 2.LFCSP package
EN
voltages, while providing increased performance, dramatically
lower power consumption, and reduced package size.
The on resistance profile is very flat over the full analog input
range ensuring excellent linearity and low distortion when
switching audio signals. iCMOS construction ensures ultralow
power dissipation, making the part ideally suited for portable
and battery-powered instruments.
VDD = 15 V ± 10%, VSS = −15 V ± 10%, GND = 0 V, unless otherwise noted.
Table 1.
25°C -40°C to
+85°C
ANALOG SWITCH
Analog Signal Range VDD to VSS V
On Resistance (RON) 1.5 Ω typ VS = ±10 V, IS = −10 mA; Figure 23
2 Ω max VDD = +13.5 V, VSS = −13.5 V
On Resistance Match between
Channels (∆R
)
ON
0.1 Ω typ V
0.5 Ω max
On Resistance Flatness (R
) 0.1 Ω typ VS = −5 V/0 V/+5 V; IS = −10 mA
FLAT(ON)
0.5 Ω max
LEAKAGE CURRENTS
Source Off Leakage, IS (Off) ±0.01 nA typ VS = ±10 V, Vs = ±10 V; Figure 23
±0.5 ±2.5 ±5 nA max
Drain Off Leakage, ID (Off) ±0.01 nA typ VS = ±10 V, Vs = ±10 V;; Figure 23
±0.5 ±2.5 ±5 nA max
Channel On Leakage, ID, IS (On) ±0.04 nA typ VS = VD = ±10 V; Figure 23
±1 ±2.5 ±5 nA max
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
Input Current, I
INL
2.0 V min
INH
0.8 V max
INL
or I
0.005 µA typ VIN = V
INH
±0.5 µA max
Digital Input Capacitance, CIN 5 pF typ
DYNAMIC CHARACTERISTICS1
Transition Time, t
120 ns typ RL = 300 Ω, CL = 35 pF
TRANS
150 200 ns max VS = +10 V; Figure 25
tON (EN) 85 ns typ RL = 300 Ω, CL = 35 pF
105 130 140 ns max VS = 10 V; see Figure 25
t
(EN) 105 ns typ RL = 300 Ω, CL = 35 pF
OFF
125 150 170 ns max VS = 10 V; see Figure 25
Break-before-Make Time Delay, tD 15 40 ns typ RL = 300 Ω, CL = 35 pF
1 ns min VS1 = VS2 = +10 V; Figure 27
Charge Injection 50 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF; Figure 29
Off Isolation 50 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; Figure 30
Channel-to-Channel Crosstalk 60 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; Figure 31
Total Harmonic Distortion + Noise 0.015 % typ RL = 110Ω, 5 V rms, f = 20 Hz to 20 kHz
−3 dB Bandwidth 100 MHz typ RL = 50 Ω, CL = 5 pF; Figure 32
CS (Off) 35 pF typ f = 1 MHz; VS = 0 V
CD (Off) 35 pF typ f = 1 MHz; VS = 0 V
CD, CS (On) 70 pF typ f = 1 MHz; VS = 0 V
POWER REQUIREMENTS VDD = +16.5 V, VSS = −16.5 V
IDD 0.001 µA typ Digital Inputs = 0 V or VDD
1 µA max
IDD 150 µA typ Digital Input = 5 V
300 µA max
ISS 0.001 µA typ Digital Inputs = 0 V, 5V or VDD
1.0 µA max
-40°C to
+125°C
= ±10 V, IS = −10 mA
S
V
= +16.5 V, VSS = −16.5 V
DD
or V
INL
INH
Rev. PrC| Page 3 of 17
ADG1436 Preliminary Technical Data
25°C -40°C to
+85°C
VDD/VSS ±4.5/±16.5 V min/max Gnd = 0V
1
Guaranteed by design, not subject to production test.
Charge Injection 30
Off Isolation 50
Channel-to-Channel Crosstalk 60
Total Harmonic Distortion + Noise 0.015 % typ RL = 110Ω, 5 V rms, f = 20 Hz to 20 kHz
−3 dB Bandwidth 100
CS (Off) 35 pF typ f = 1 MHz; VS = 6V
CD (Off) 35 pF typ f = 1 MHz; VS = 6V
CD, CS (On) 70 pF typ f = 1 MHz; VS = 6 V
0 V to VDD V
3 4
0.1
±0.5 ±2.5 ±5 nA max
±0.5 ±2.5 ±5 nA max
±1 ±2.5 ±5 nA max
±0.5 µA max
105 130 140 ns max
1 ns min V
-40°C to
+125°C
-40°C to
+125°C
Ω typVS = +10 V, IS = −10 mA; Figure 23
Ω max
Ω typV
pC typ VS = 6 V, RS = 0 Ω, CL = 1 nF; Figure 29
dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; Figure 30;
dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; Figure 31
MHz typ RL = 50 Ω, CL = 5 pF; Figure 32
or V
INH
INL
= VS2 = 8 V; Figure 27
Rev. PrC | Page 4 of 17
Preliminary Technical Data ADG1436
25°C -40°C to
+85°C
POWER REQUIREMENTS
IDD 0.001
IDD 150
VDD 5/16.5 V
1.0 µA max
300 µA max
1
Guaranteed by design, not subject to production test.
DUAL SUPPLY
VDD = 5 V ± 10%, VSS = -5 V ± 10%, GND = 0 V, unless otherwise noted.
Table 3.
−40°C to
25°C
ANALOG SWITCH
Analog Signal Range 0 V to VDD V
On Resistance (RON) 3
4
On Resistance Match Between
Channels (∆R
)
ON
0.1
On Resistance Flatness (R
) 0.1
FLAT(ON)
LEAKAGE CURRENTS
Source Off Leakage, IS (Off) ±0.01 nA typ
±0.5 ±2.5 ±5 nA max
Drain Off Leakage, ID (Off) ±0.01 nA typ
±0.5 ±2.5 ±5 nA max
Channel On Leakage, ID, IS (On) ±0.04 nA typ VS = VD = ±4.5V; See figure x
±1 ±5 ±5 nA max
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
Input Current, I
INL
2.0 V min
INH
0.8 V max
INL
or I
0.001 µA typ VIN = V
INH
±0.5 µA max
Digital Input Capacitance, CIN 3 pF typ
DYNAMIC CHARACTERISTICS1
Transition Time, t
150 ns typ RL = 300 Ω, CL = 35 pF
TRANS
190 265 ns max VS = 3 V; Figure 25
tON (EN) 85 ns typ
105 130 140 ns max
t
(EN) 105 ns typ
OFF
125 150 170 ns max
Break-Before-Make Time Delay, tD 50 ns typ
10 ns min VS1 = VS2 = 3 V; See figure 25
Charge Injection 50 pC typ
Off Isolation 50 dB typ
Channel-to-Channel Crosstalk 60 dB typ
+85°C
-40°C to
+125°C
−40°C to
+125°C
VDD = 13.2 V
µA typ Digital Inputs = 0 V or VDD
µA typ Digital Inputs = 5 V
min/max
Gnd = 0V, Vss = 0V
Unit Test Conditions/Comments
Ω typ VS = ±3.3V, IS = −10 mA; See figure x
Ω max VDD = +4.5 V, VSS = −4.5 V
Ω typ V
VS = 0 V, RS = 0 Ω, CL = 1 nF; See figure x
RL = 50 Ω, CL = 5 pF, f = 1 MHz; See figure
x
R
= 50 Ω, CL = 5 pF, f = 1 MHz; See figure
L
x
Rev. PrC| Page 5 of 17
ADG1436 Preliminary Technical Data
−40°C to
25°C
Total Harmonic Distortion + Noise 0.002 % typ RL = 110Ω, 5 V pp, f = 20 Hz to 20 kHz
−3 dB Bandwidth
CS (Off) 35 pF typ Vs = 0V, f = 1 MHz
CD (Off) 35 pF typ Vs = 0V, f = 1 MHz
CD, CS (On) 150 pF typ Vs = 0V, f = 1 MHz
POWER REQUIREMENTS VDD = 5.5 V , Vss = -5.5V
IDD 0.001 µA typ Digital inputs = 0 V or VDD
1.0 µA max
ISS 0.001 µA typ Digital inputs = 0 V or VDD
1.0 µA max
VDD/VSS ±4.5/±16.5 V
200 MHz typ
+85°C
−40°C to
+125°C Unit Test Conditions/Comments
RL = 50 Ω, CL = 5 pF; See figure x
Gnd = 0V
min/max
1
Guaranteed by design, not subject to production test.
Rev. PrC | Page 6 of 17
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