ANALOG DEVICES ADG1433 Service Manual

4 Ω RON, Triple/Quad SPDT

A

A

A

www.BDTIC.com/ADI

FEATURES

4.7 Ω maximum on resistance @ 25°C

0.5 Ω on resistance flatness
Fully specified at ±15 V/+12 V/±5 V
3 V logic-compatible inputs
Up to 115 mA continuous current per channel
Rail-to-rail operation
Break-before-make switching action
16-/20-lead TSSOP and 4 mm × 4 mm LFCSP_VQ packages

APPLICATIONS

Relay replacement
Audio and video routing
Automatic test equipment
Data acquisition systems
Temperature measurement systems
Avio nics
Battery-powered systems
Communication systems
Medical equipment

±15 V/+12 V/±5 V iCMOS Switches

ADG1433/ADG1434

FUNCTIONAL BLOCK DIAGRAMS

D1

D2

D1

IN1

ADG1433

LOGIC

IN1 IN2 IN3 EN

ADG1434

S3B

D3

S3A

S4A

D4

S4B

IN4

06181-001

S1A

S1B

S2B

S2A

SWITCHES SHOWN FOR
A 1 INPUT LO GIC.

Figure 1. ADG1433 TSSOP and LFCSP_VQ

S1

S1B

GENERAL DESCRIPTION

The ADG1433 and ADG1434 are monolithic industrial CMOS
(iCMOS®) analog switches comprising three independently
selectable single-pole, double-throw (SPDT) switches and
four independently selectable SPDT switches, respectively.

All channels exhibit break-before-make switching action that
prevents momentary shorting when switching channels. An
input on the ADG1433 (LFCSP and TSSOP packages) and
ADG1434 (LFCSP package only) is used to enable or disable
the device. When disabled, all channels are switched off.

The iCMOS modular manufacturing process combines high
voltage, complementary metal-oxide semiconductor (CMOS),
and bipolar technologies. It enables the development of a wide
range of high performance analog ICs capable of 33 V operation
in a footprint that no other generation of high voltage parts has
been able to achieve. Unlike analog ICs using a conventional
CMOS process, iCMOS components can tolerate high supply
voltages while providing increased performance, dramatically
lower power consumption, and reduced package size.

The ultralow on resistance and on resistance flatness of these
switches make them ideal solutions for data acquisition and gain
switching applications, where low distortion is critical. iCMOS
construction ensures ultralow power dissipation, making the parts
ideally suited for portable and battery-powered instruments.

EN

IN2

S2B

D2

S2

SWITCHES S HOWN FOR

1 INPUT LOGIC.

Figure 2. ADG1434 TSSOP

S1A

S1B

S2B

S2A

SWITCHES SHOWN F OR
A 1 INPUT LO GIC.

ADG1434

D1

D2

LOGIC

IN1

IN2 IN3 IN4 EN

Figure 3. ADG1434 LFCSP_VQ

IN3

S3B

D3

S3A

S4A

D4

S4B

S3B

D3

S3A

06181-002

06181-101

Rev. A

Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone] www.analog.com
Fax: [phone] ©2006–2008 Analog Devices, Inc. All rights reserved.

ADG1433/ADG1434

www.BDTIC.com/ADI

TABLE OF CONTENTS

Features .............................................................................................. 1

Applications ....................................................................................... 1 

General Description ......................................................................... 1

Functional Block Diagrams ............................................................. 1

Revision History ............................................................................... 2

Specifications ..................................................................................... 3

±15 V Dual Supply ....................................................................... 3

12 V Single Supply ........................................................................ 5

±5 V Dual Supply ......................................................................... 6

REVISION HISTORY

6/08—Rev. 0 to Rev. A

Added Continuous Current per Channel Parameter (Table 1) .. 4
Added Continuous Current per Channel Parameter (Table 2) .. 5
Added Continuous Current per Channel Parameter (Table 3) .. 6

Changes to Table 4 ............................................................................ 7

Changes to Figure 30 ...................................................................... 13

Updated Outline Dimensions ....................................................... 16

Changes to Ordering Guide .......................................................... 17

10/06—Revision 0: Initial Version

Absolute Maximum Ratings ............................................................7

Thermal Resistance .......................................................................7

ESD Caution...................................................................................7

Pin Configurations and Function Descriptions ............................8

Typical Performance Characteristics ........................................... 10

Test Circuits ..................................................................................... 13

Terminology .................................................................................... 15

Outline Dimensions ....................................................................... 16

Ordering Guide .......................................................................... 17

Rev. A | Page 2 of 20

ADG1433/ADG1434

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SPECIFICATIONS

±15 V DUAL SUPPLY

VDD = +15 V ± 10%, VSS = –15 V ± 10%, GND = 0 V, unless otherwise noted.

Table 1.

−40°C to

Parameter +25°C

ANALOG SWITCH

Analog Signal Range VSS to VDD V
On-Resistance, RON 4 Ω typ VS = ±10 V, IS = −10 mA; see Figure 25

4.7 5.7 6.7 Ω max VDD = +13.5 V, VSS = −13.5 V
On-Resistance Match Between 0.5 Ω typ VS = ±10 V, IS = −10 mA

Channels, ΔRON 0.78 0.85 1.1 Ω max

On Resistance Flatness, R

0.72 0.77 0.92 Ω max

LEAKAGE CURRENTS VDD = +16.5 V, VSS = −16.5 V

Source Off Leakage, IS (Off) ±0.04 nA typ VD = ±10 V, VS = ±10 V; see Figure 26
±0.3 ±0.6 ±3 nA max
Drain Off Leakage, ID (Off) ±0.04 nA typ VD = ±10 V, VS = ±10 V; see Figure 26
±0.3 ±0.6 ±3 nA max
Channel On Leakage, ID, IS (On) ±0.05 nA typ VS = VD = ±10 V; see Figure 27
±0.4 ±0.8 ±8 nA max

DIGITAL INPUTS

Input High Voltage, VIH 2.0 V min
Input Low Voltage, VIL 0.8 V max
Input Current, IIL or IIH ±0.005 μA typ VIN = V
±0.1 μA max
Digital Input Capacitance, CIN 3 pF typ

DYNAMIC CHARACTERISTICS2

Transition Time, t
170 200 230 ns max VS = 10 V, see Figure 28
Break-Before-Make Time Delay, tD 40 ns typ RL = 100 Ω, CL = 35 pF
30 ns min VS1 = VS2 = 10 V, see Figure 29
tON (EN)
170 200 230 ns max VS = 10 V, see Figure 30
t

(EN)

OFF

75 85 90 ns max VS = 10 V, see Figure 30
Charge Injection −50 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF, see Figure 31
Off Isolation −70 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 32
Channel-to-Channel Crosstalk −70 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 34
Total Harmonic Distortion, THD + N 0.025 % typ

−3 dB Bandwidth
Insertion Loss 0.24 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 33
CS (Off) 12 pF typ f = 1 MHz
CD (Off) 22 pF typ f = 1 MHz
CD, CS (On) 72 pF typ f = 1 MHz

140 ns typ RL = 100 Ω, CL = 35 pF

TRANS

0.5 Ω typ VS = ±10 V, IS = −10 mA

FLAT(ON)

140 ns typ R

60 ns typ R

200 MHz typ RL = 50 Ω, CL = 5 pF, see Figure 33

+85°C

−40°C to
+125°C1 Unit Test Conditions/Comments

or VDD

GND

= 100 Ω, CL = 35 pF

L

= 100 Ω, CL = 35 pF

L

= 110 Ω, 15 V p-p, f = 20 Hz to 20 kHz, see

R

L

Figure 35

Rev. A | Page 3 of 20

ADG1433/ADG1434

www.BDTIC.com/ADI

−40°C to

Parameter +25°C

POWER REQUIREMENTS

IDD 0.001 μA typ Digital inputs = 0 V or VDD
1 μA max
IDD 260 μA typ Digital inputs = 5 V
440 μA max
ISS 0.001 μA typ Digital inputs = 0 V, 5 V, or VDD
1 μA max
VDD/VSS ±4.5/±16.5 V min/max GND = 0 V
Continuous Current per Channel

ADG1433 115 75 40 mA max
ADG1434 100 65 40 mA max

1

Temperature range for Y version: −40°C to +125°C.

2

Guaranteed by design, not subject to production test.

2

V

+85°C

−40°C to
+125°C

1

Unit Test Conditions/Comments

VDD = +16.5 V, VSS = −16.5 V

= +13.5 V, VSS = −13.5 V

DD

Rev. A | Page 4 of 20

ADG1433/ADG1434

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12 V SINGLE SUPPLY

VDD = 12 V ± 10%, VSS = 0 V, GND = 0 V, unless otherwise noted.

Table 2.

Parameter +25°C

+85°C

ANALOG SWITCH

Analog Signal Range 0 to VDD V

−40°C to

On-Resistance, RON

6 Ω typ
8 9.5 11.2 Ω max VDD = 10.8 V, VSS = 0 V
On-Resistance Match Between 0.55 Ω typ VS = 0 V to 10 V, IS = −10 mA

Channels, ΔRON 0.82 0.85 1.1 Ω max

On Resistance Flatness, R

1.5 Ω typ VS = 0 V to 10 V, IS = −10 mA

FLAT(ON)

2.5 2.5 2.8 Ω max

LEAKAGE CURRENTS VDD = 13.2 V

Source Off Leakage, IS (Off) ±0.04 nA typ
±0.3 ±0.6 ±3 nA max
Drain Off Leakage, ID (Off) ±0.04 nA typ

±0.3 ±0.6 ±3 nA max

Channel On Leakage, ID, IS (On) ±0.06 nA typ

±0.4 ±0.8 ±8 nA max

DIGITAL INPUTS

Input High Voltage, VIH 2.0 V min
Input Low Voltage, VIL 0.8 V max
Input Current, IIL or IIH ±0.005 μA typ VIN = V
±0.1 μA max
Digital Input Capacitance, CIN 4 pF typ

DYNAMIC CHARACTERISTICS2

Transition Time, t

200 ns typ RL = 100 Ω, CL = 35 pF

TRANS

255 310 350 ns max
Break-Before-Make Time Delay, tD 80 ns typ RL = 100 Ω, CL = 35 pF
55 ns min
tON (EN)

210 ns typ
270 320 360 ns max
t

OFF

(EN)

70 ns typ

86 95 105 ns max

Charge Injection

−10 pC typ
Off Isolation –70 dB typ
Channel-to-Channel Crosstalk –70 dB typ

−3 dB Bandwidth

135

Insertion Loss 0.5 dB typ
CS (Off) 25 pF typ f = 1 MHz
CD (Off) 45 pF typ f = 1 MHz
CD, CS (On) 80 pF typ f = 1 MHz

POWER REQUIREMENTS VDD = 13.2 V

IDD 0.002 μA typ Digital inputs = 0 V or VDD
1 μA max
IDD 260 μA typ Digital inputs = 5 V

440 μA max

VDD 5/16.5 V min/max VSS = 0 V, GND = 0 V
Continuous Current per Channel2

V
ADG1433 100 65 40 mA max
ADG1434 85 60 35 mA max

1

Temperature range for Y version: −40°C to +125°C.

2

Guaranteed by design, not subject to production test.

−40°C to
+125°C

1

Unit Test Conditions/Comments

V

= 0 V to 10 V, IS = −10 mA, see Figure 25

S

V

= 1 V/10 V, VD = 10 V/1 V, see Figure 26

S

V

= 1 V/10 V, VD = 10 V/1 V, see Figure 26

S

V

= VD = 1 V or 10 V, see Figure 27

S

or VDD

GND

V

= 8 V, see Figure 28

S

V

= VS2 = 8 V, see Figure 29

S1

= 100 Ω, CL = 35 pF

R

L

V

= 8 V, see Figure 30

S

= 100 Ω, CL = 35 pF

R

L

V

= 8 V, see Figure 30

S

V

= 6 V, RS = 0 Ω, CL = 1 nF, see Figure 31

S

R

= 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 32

L

R

= 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 34

L

R

MHz typ

= 50 Ω, CL = 5 pF, see Figure 33

L

R

= 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 33

L

= +10.8 V, VSS = 0 V

DD

Rev. A | Page 5 of 20

ADG1433/ADG1434

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±5 V DUAL SUPPLY

VDD = +5 V ± 10%, VSS = −5 V ± 10%, GND = 0 V, unless otherwise noted.

Table 3.

Parameter +25°C

+85°C

ANALOG SWITCH

Analog Signal Range VSS to VDD V
On Resistance (RON) 7 Ω typ
9 10.5 12 Ω max VDD = +4.5 V, VSS = −4.5 V
On-Resistance Match Between 0.55 Ω typ VS = ±4.5 V, IS = −10 mA

Channels (ΔRON) 0.78 0.91 1.1 Ω max

−40°C to

On-Resistance Flatness, R

1.5 Ω typ VS = ±4.5 V, IS = −10 mA

FLAT(ON)

2.5 2.5 3 Ω max

LEAKAGE CURRENTS VDD = +5.5 V, VSS = −5.5 V

Source Off Leakage, IS (Off) ±0.02 nA typ
±0.3 ±0.6 ±3 nA max
Drain Off Leakage, ID (Off) ±0.02 nA typ

±0.3 ±0.6 ±3 nA max

Channel On Leakage, ID, IS (On) ±0.04 nA typ

±0.4 ±0.8 ±8 nA max

DIGITAL INPUTS

Input High Voltage, VIH 2.0 V min
Input Low Voltage, VIL 0.8 V max
Input Current, IIL or IIH ±0.005 μA typ VIN = V
±0.1 μA max
Digital Input Capacitance, CIN 4 pF typ

DYNAMIC CHARACTERISTICS2

Transition Time, t

315 ns typ RL = 100 Ω, CL = 35 pF

TRANS

430 480 550 ns max
Break-Before-Make Time Delay, tD 90 ns typ RL = 100 Ω, CL = 35 pF
55 ns min
tON (EN)

325 ns typ R
425 490 545 ns max
t

(EN)

OFF

150 ns typ R
200 225 240 ns max
Charge Injection −10 pC typ
Off Isolation −70 dB typ
Channel-to-Channel Crosstalk −70 dB typ
Total Harmonic Distortion, THD + N 0.06 % typ

−3 dB Bandwidth

145 MHz typ

Insertion Loss 0.5 dB typ
CS (Off) 18 pF typ f = 1 MHz
CD (Off) 32 pF typ f = 1 MHz
CD, CS (On) 80 pF typ f = 1 MHz

POWER REQUIREMENTS

IDD 0.002 μA typ Digital inputs = 0 V, 5 V, or VDD
1 μA max
ISS 0.001 μA typ Digital inputs = 0 V, 5 V, or VDD
1 μA max
VDD/VSS ±4.5/±16.5 V min/max GND = 0 V
Continuous Current per Channel2

ADG1433 95 60 35 mA max
ADG1434 85 55 35 mA max

1

Temperature range for Y version: −40°C to +125°C.

2

Guaranteed by design, not subject to production test.

−40°C to

1

+125°C

Rev. A | Page 6 of 20

Unit Test Conditions/Comments

V

= ±4.5 V, IS = −10 mA, see Figure 25

S

V

= ±4.5 V, VS = ±4.5 V, see Figure 26

D

V

= ±4.5 V, VS = ±4.5 V, see Figure 26

D

V

= VD = ±4.5 V, see Figure 27

S

or VDD

GND

V

= 5 V, see Figure 28

S

V

= VS2 = 5 V, see Figure 29

S1

= 100 Ω, CL = 35 pF

L

V

= 5 V, see Figure 30

S

= 100 Ω, CL = 35 pF

L

V

= 5 V, see Figure 30

S

V

= 0 V, RS = 0 Ω, CL = 1 nF, see Figure 31

S

R

= 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 32

L

R

= 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 34

L

R

= 110 Ω, 5 V p-p, f = 20 Hz to 20 kHz, see Figure 35

L

R

= 50 Ω, CL = 5 pF, see Figure 33

L

R

= 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 33

L

V

= +5.5 V, VSS = −5.5 V

DD

V

= +4.5 V, VSS = −4.5 V

DD