0.5 Ω on resistance flatness
Up to 190 mA continuous current
Fully specified at ±15 V/+12 V/±5 V
3 V logic-compatible inputs
Rail-to-rail operation
Break-before-make switching action
16-lead TSSOP and 4 mm × 4 mm LFCSP packages
APPLICATIONS
Relay replacement
Audio and video routing
Automatic test equipment
Data acquisition systems
Temperature measurement systems
Avio nics
Battery-powered systems
Communication systems
Medical equipment
±15 V/+12 V/±5 V iCMOS Multiplexers
ADG1408/ADG1409
FUNCTIONAL BLOCK DIAGRAM
ADG1408
S1
S8
1-OF-8
DECODER
S1A
S4A
D
S1B
S4B
Figure 1.
ADG1409
1-OF-4
DECODER
A0 A1 ENA0 A1 A2 EN
DA
DB
04861-001
GENERAL DESCRIPTION
The ADG1408/ADG1409 are monolithic iCMOS® analog multiplexers comprising eight single channels and four differential
channels, respectively. The ADG1408 switches one of eight
inputs to a common output, as determined by the 3-bit binary
address lines, A0, A1, and A2. The ADG1409 switches one of
four differential inputs to a common differential output, as
determined by the 2-bit binary address lines, A0 and A1. An EN
input on both devices is used to enable or disable the device.
When disabled, all channels are switched off.
The iCMOS (industrial CMOS) modular manufacturing process
combines high voltage CMOS (complementary metal-oxide
semiconductor) and bipolar technologies. It enables the development of a wide range of high performance analog ICs capable
of 33 V operation in a footprint that no other generation of high
voltage parts has been able to achieve. Unlike analog ICs using
conventional CMOS processes, iCMOS components can tolerate
high supply voltages while providing increased performance,
dramatically lower power consumption, and reduced package size.
The ultralow on resistance and on resistance flatness of these
switches make them ideal solutions for data acquisition and
gain switching applications where low distortion is critical.
iCMOS construction ensures ultralow power dissipation,
making the parts ideally suited for portable and batterypowered instruments.
PRODUCT HIGHLIGHTS
1. 4 Ω on resistance.
2. 0.5 Ω on resistance flatness.
3. 3 V logic compatible digital input, V
4. 16-lead TSSOP and 4 mm × 4 mm LFCSP packages.
Table 1. Related Devices
Part No. Description
ADG1208/ADG1209
Low capacitance, low charge injection,
and low leakage 4-/8-channel ±15 V
multiplexers
= 2.0 V, VIL = 0.8 V.
IH
Rev. A
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
VDD = +15 V ± 10%, VSS = −15 V ± 10%, GND = 0 V, unless otherwise noted.
Table 2.
−40°C to
Parameter +25°C
+85°C
ANALOG SWITCH
Analog Signal Range VSS to VDD V
On Resistance (RON) 4 Ω typ VS = ±10 V, IS = −10 mA; see Figure 26
4.7 5.7 6.7 Ω max VDD = +13.5 V, VSS = −13.5 V
On Resistance Match Between 0.2 Ω typ VS = ±10 V, IS = −10 mA
Channels (ΔRON) 0.78 0.85 1.1 Ω max
On Resistance Flatness (R
) 0.5 Ω typ VS = ±10 V, IS = −10 mA
FLAT(ON)
0.72 0.77 0.92 Ω max
LEAKAGE CURRENTS VDD = +16.5 V, VSS −16.5 V =
Source Off Leakage, IS (Off) ±0.04 nA typ
±0.2 ±0.6 ±5 nA max
Drain Off Leakage, ID (Off) ±0.04 nA typ
±0.45 ±2 ±30 nA max
Channel On Leakage, ID, IS (On) ±0.1 nA typ VS = VD = ±10 V; see Figure 28
±1.5 ±3 ±30 nA max
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
2.0 V min
INH
0.8 V max
INL
Input Current ±0.005 μA typ VIN = V
±0.1 μA max
Digital Input Capacitance, CIN 4 pF typ
DYNAMIC CHARACTERISTICS2
Transition Time, t
140 ns typ RL = 100 Ω, CL = 35 pF
TRANSITION
170 210 240 ns max VS = 10 V, see Figure 29
Break-Before-Make Time Delay, t
50 ns typ RL = 100 Ω, CL = 35 pF
BBM
30 ns min VS1 = VS2 = 10 V; see Figure 30
tON (EN) 100 ns typ RL = 100 Ω, CL = 35 pF
120 150 165 ns max VS = 10 V; see Figure 31
t
(EN) 100 ns typ RL = 100 Ω, CL = 35 pF
OFF
120 150 170 ns max VS = 10 V; see Figure 31
Charge Injection −50 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF; see Figure 32
Off Isolation −70 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 33
Channel-to-Channel Crosstalk −70 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 34
Total Harmonic Distortion, THD + N 0.025 % typ
−3 dB Bandwidth RL = 50 Ω, CL = 5 pF; see Figure 35
ADG1408 60 MHz typ
ADG1409 115 MHz typ
Insertion Loss 0.24 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 35
CS (Off) 14 pF typ f = 1 MHz
CD (Off)
ADG1408 80 pF typ f = 1 MHz
ADG1409 40 pF typ f = 1 MHz
CD, CS (On)
ADG1408 135 pF typ f = 1 MHz
ADG1409 90 pF typ f = 1 MHz
−40°C to
1
+125°C
Unit Test Conditions/Comments
V
= ±10 V, VD = 10 V; see טFigure 27
S
V
= ±10 V, VD = ט10 V; see Figure 27
S
or VDD
GND
= 110 Ω, 15 V p-p, f = 20 Hz to 20 kHz;
R
L
see Figure 36
Rev. A | Page 3 of 20
ADG1408/ADG1409
www.BDTIC.com/ADI
−40°C to
Parameter +25°C
POWER REQUIREMENTS VDD = +16.5 V, VSS = −16.5 V
IDD 0.002 μA typ Digital inputs = 0 V or VDD
1 μA max
220 μA typ Digital inputs = 5 V
325 μA max
ISS 0.002 μA typ Digital inputs = 0 V, 5 V or VDD
1 μA max
VDD/VSS ±4.5/±16.5 V min/max
1
Temperature range: Y version: −40°C to +125°C.
2
Guaranteed by design, not subject to production test.
Analog Signal Range 0 to VDD V
On Resistance (RON) 6 Ω typ VS = 0 V to 10 V, IS = −10 mA; see Figure 26
8 9.5 11.2 Ω max VDD = 10.8 V, VSS = 0 V
On Resistance Match 0.2 Ω typ VS = 0 V to 10 V, IS = −10 mA
Between Channels (ΔRON) 0.82 0.85 1.1 Ω max
On Resistance Flatness (R
) 1.5 Ω typ VS = 0 V to 10 V, IS = −10 mA
FLAT(ON)
2.5 2.5 2.8 Ω max
LEAKAGE CURRENTS VDD = 13.2 V
Source Off Leakage, IS (Off) ±0.04 nA typ VS = 1 V/10 V, VD = 10 V/1 V; see Figure 27
±0.2 ±0.6 ±5 nA max
Drain Off Leakage, ID (Off) ±0.04 nA typ VS = 1 V/10 V, VD = 10 V/1 V; see Figure 27
±0.45 ±1 ±37 nA max
Channel On Leakage, ID, IS (On) ±0.06 nA typ VS = VD = 1 V or 10 V; see Figure 28
±0.44 ±1.3 ±32 nA max
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
2.0 V min
INH
0.8 V max
INL
Input Current ±0.005 μA typ VIN = V
±0.1 μA max
Digital Input Capacitance, CIN 5 pF typ
DYNAMIC CHARACTERISTICS
Transition Time, t
TRANSITION
2
200 ns typ RL = 100 Ω, CL = 35 pF
260 330 380 ns max VS = 8 V; see Figure 29
Break-Before-Make Time Delay, t
90 ns typ RL = 100 Ω, CL = 35 pF
BBM
40 ns min VS1 = VS2 = 8 V; see Figure 30
tON (EN) 160 ns typ RL = 100 Ω, CL = 35 pF
210 250 285 ns max VS = 8 V; see Figure 31
t
(EN) 115 ns typ RL = 100 Ω, CL = 35 pF
OFF
145 180 200 ns max VS = 8 V; see Figure 31
Charge Injection −12 pC typ VS = 6 V, RS = 0 Ω, CL = 1 nF; see Figure 32
Off Isolation −70 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 33
Channel-to-Channel Crosstalk −70 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 34
−3 dB Bandwidth RL = 50 Ω, CL = 5 pF; see Figure 35
ADG1408 36 MHz typ
ADG1409 72 MHz typ
Insertion Loss 0.5 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 35
CS (Off) 25 pF typ f = 1 MHz
CD (Off)
ADG1408 165 pF typ f = 1 MHz
ADG1409 80 pF typ f = 1 MHz
CD, CS (On)
ADG1408 200 pF typ f = 1 MHz
ADG1409 120 pF typ f = 1 MHz
−40°C to
1
+125°C
Unit Test Conditions/Comments
or VDD
GND
Rev. A | Page 5 of 20
ADG1408/ADG1409
www.BDTIC.com/ADI
−40°C to
Parameter +25°C
POWER REQUIREMENTS VDD = 13.2 V
IDD 0.002 μA typ Digital inputs = 0 V or VDD
1 μA max
220 μA typ Digital inputs = 5 V
335 μA max
VDD 5/16.5 V min/max VSS = 0 V, GND = 0 V
1
Temperature range for Y version: −40°C to +125°C.
2
Guaranteed by design, not subject to production test.
+85°C
−40°C to
1
+125°C
Unit Test Conditions/Comments
Rev. A | Page 6 of 20
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