Analog Devices ADG1408 9 prb Datasheet

5 Ω Max Ron, 4- and 8-Channel

±15 V/12 V/±5 V iCMOS™ Multiplexers

Preliminary Technical Data

FEATURES

5 Ω max on resistance

0.5 Ω max on resistance flatness
33 V supply maximum ratings

Fully specified at ±15 V/12 V/±5 V
3 V logic compatible inputs
Rail-to-rail operation
Break-before-make switching action
16-lead TSSOP and 4 mm × 4 mm LFCSP packages
Typical power consumption (< 0.03 µW)

APPLICATIONS

Relay replacement
Audio and video routing
Automatic test equipment
Data acquisition systems
Battery-powered systems
Sample-and-hold systems
Communication systems
Relay replacement

GENERAL DESCRIPTION

The ADG1408 and ADG1409 are monolithic iCMOS analog
multiplexers comprising eight single channels and four
differential channels, respectively. The ADG1408 switches one
of eight inputs to a common output as determined by the 3-bit
binary address lines A0, A1, and A2. The ADG1409 switches
one of four differential inputs to a common differential output
as determined by the 2-bit binary address lines A0 and A1. An
EN input on both devices is used to enable or disable the device.
When disabled, all channels are switched OFF.

The iCMOS (industrial-CMOS) modular manufacturing
process combines high-voltage CMOS (complementary metal­oxide semiconductor) and bipolar technologies. It enables the
development of a wide range of high performance analog ICs
capable of 30-V operation in a footprint that no other
generation of high-voltage parts has been able to achieve.
Unlike analog ICs using conventional CMOS processes, iCMOS
components can tolerate high supply voltages, while providing
increased performance, dramatically lower power consumption,
and reduced package size.

ADG1408/ADG1409

FUNCTIONAL BLOCK DIAGRAMS

ADG1408

S1

S8

1 OF 8

DECODER

A2

A1

A0

SWITCHES SHOWN FOR A “1” LOGIC INPUT

EN

S1A

S4A

D

S1B

S4B

Figure 1.

The ultralow on resistance and on resistance flatness of these
switches make them ideal solutions for data acquisition and
gain switching applications, where low distortion is critical.
iCMOS construction ensures ultralow power dissipation,
making the parts ideally suited for portable and battery
powered instruments

PRODUCT HIGHLIGHTS

1. 5 Ω max on resistance.

2. 0.5 Ω max on resistance flatness.

3. 3 V logic compatible digital input V

4. 16-lead TSSOP and 4 mm ×4 mm LFCSP package.

ADG1409

DA

DB

1 OF 4

DECODER

A0

EN

A1

= 2.0 V, VIL = 0.8 V.

IH

Rev. PrB

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However, no responsibility is assumed by Analog Devices for its use, nor for any
infringements of patents or other rights of third parties that may result from its use.
Specifications subject to change without notice. No license is granted by implication
or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone] www.analog.com
Fax: [phone] © 2004 Analog Devices, Inc. All rights reserved.

ADG1408/ADG1409 Preliminary Technical Data

TABLE OF CONTENTS

Specifications..................................................................................... 3

Pin Configurations—TSSOP ...........................................................8

Dual Supply................................................................................... 3

Single Supply................................................................................. 4

Dual Supply................................................................................... 5

Absolute Maximum Ratings............................................................ 7

ESD Caution.................................................................................. 7

REVISION HISTORY

Terminology .......................................................................................9

Typical Performance CharacteristicS........................................... 10

Test Circuits..................................................................................... 12

Outline Dimensions....................................................................... 14

Ordering Guide .......................................................................... 14

Rev. PrB | Page 2 of 16

Preliminary Technical Data ADG1408/ADG1409

SPECIFICATIONS

DUAL SUPPLY1

VDD = +15 V ± 10%, VSS = –15 V ± 10%, GND = 0 V, unless otherwise noted.

Table 1.

Parameter +25ºC

−40ºC to +85ºC −40ºC to +125ºC

ANALOG SWITCH

Analog Signal Range VSS to VDD V
RON 3

4 5 5

RON Flatness

0.5

∆RON 0.5

LEAKAGE CURRENTS

Source OFF Leakage IS (OFF) ±0.01 nA typ VD = ±10 V, VS = −10 V;

±0.5 ±2.5 ±50 nA max ±0.5
Drain OFF Leakage ID (OFF) VD = ±10 V; VS = ±10 V;
ADG1408 ±1 ±100 ±100 nA max Test Circuit 3
ADG1409 ±1 ±50 ±50 nA max
Channel ON Leakage ID, IS (ON) VS = VD = ±10 V;
ADG1408 ±1 ±100 ±100 nA max Test Circuit 4
ADG1409 ±1 ±50 ±50 nA max

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V

2.0 2.0 V min

INH

0.8 0.8 V max

INL

Input Current
I

or I

±0.005 µA max VIN= V

INL

INH

±0.5 ±0.5 µA max
CIN, Digital Input Capacitance 5 pF typ

DYNAMIC CHARACTERISTICS2

t

80 120 120 ns typ RL = 300 Ω, CL = 35 pF;

TRANSITION

250 250 ns max VS1 = ±10 V, VS8 = ±10 V;

T

10 10 10 ns typ RL = 300 Ω, CL = 35 pF;

BBM

1 ns min VS = 10 V; Test Circuit 6
tON(EN) 85 125 125 ns typ RL = 300 Ω CL = 35 pF;
150 225 225 ns max VS = 5 V; Test Circuit 7
t

(EN) 40 65 65 ns typ RL = 300 Ω, CL = 35 pF;

OFF

150 150 ns max VS = 5 V; Test Circuit 7
Charge Injection 20 20 pC typ

OFF Isolation 75 dB typ RL = 1 kΩ, f = 100 kHz;
V
Channel-to-Channel Crosstalk 85 dB typ RL = 1 kΩ, f = 100 kHz;
Test Circuit 10
Total Harmonic Distortion,

0.002 % typ

THD + N

−3 dB Bandwidth

50 MHz typ R

Test Circuit 10
CS (OFF) 15 pF typ f = 1 MHz

Unit Test Conditions/Comments

Ω typ

Ω max

Ω typ

Ω max

Ω typ

Ω max

VD = ±10 V, IS = −10 mA

VD = +10 V, −10 V

VD = +10 V, −10 V

Test Circuit 2

or V

INH

INL

Test Circuit 5

= 0 V, RS = 0 Ω, CL = 10 nF;

V

S

Test Circuit 8

= 0 V; Test Circuit 9

EN

= 600 Ω, 5 V rms; f=20 Hz to

R

L

20 kHz

= 300 Ω, CL = 5 pF; Test Circuit 10

L

Rev. PrB | Page 3 of 16

ADG1408/ADG1409 Preliminary Technical Data

Parameter +25ºC

−40ºC to +85ºC −40ºC to +125ºC

DYNAMIC CHARACTERISTICS2

CD (OFF) f = 1 MHz
ADG1408 100 pF typ
ADG1409 50 pF typ
CD, CS(ON) f = 1 MHz
ADG1408 150 pF typ
ADG1409 75 pF typ

POWER REQUIREMENTS

IDD 0.001 µA typ Digital inputs= 0 V or VDD
5 5 µA max
IDD 150 µA typ Digital inputs= 5 V
300 µA max
ISS 0.001 µA typ Digital inputs= 0 V or VDD
5 5 µA max
I

0.001 µA typ Digital inputs= 0 V or VDD

GND

5 5 µA max
I

150 µA typ Digital inputs= 5 V

GND

5 300 µA max

1

Temperature ranges are as follows: B Version: −40°C to +85°C; T Version: −40°C to +125°C.

2

Guaranteed by design, not subject to production test.

SINGLE SUPPLY

VDD = 12 V V ± 10%,, VSS = 0 V, GND = 0 V, unless otherwise noted.

Table 2.

Parameter +25ºC −40ºC to +85ºC −40ºC to +125ºC Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 to VDD V
RON 6 Ω typ VD = 3 V, 10 V, IS = –1 mA
7 8 9 Ω max
RON Flatness Ω typ VD = 3 V, 10 V, IS = –1 mA

1.5 Ω max
∆RON 0.5 Ω typ VD = 3 V, 10 V, IS = –1 mA
Ω max
Channel ON Leakage ID, IS (ON) VS = VD = 8 V/0 V;

ADG1408 ±1 ±100 ±100 nA max Test Circuit 4
ADG1409 ±1 ±50 ±50 nA max

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V
Input Current

IINL or I

INH

C

Digital Input Capacitance 8 pF typ f = 1 MHz

IN,

DYNAMIC CHARACTERISTICS2

t

T
1 ns min VS = 5 V; Test Circuit 6
tON (EN) 140 ns typ RL = 300 Ω CL = 35 pF;
V

130 ns typ RL = 300 Ω, CL = 35 pF;

TRANSITION

10 ns typ RL = 300 Ω, CL = 35 pF;

BBM

1

2.0 2.0 V min

INH

0.8 0.8 V max

INL

±10 ±10 µA max VIN = 0 or VDD

Unit Test Conditions/Comments

VDD = +16.5 V, VSS = −16.5 V

= 8 V/0 V, VS8 = 0 V/8 V;

V

S1

Test Circuit 5

= 5 V; Test Circuit 7

S

Rev. PrB | Page 4 of 16

Preliminary Technical Data ADG1408/ADG1409

Parameter +25ºC −40ºC to +85ºC −40ºC to +125ºC Unit Test Conditions/Comments

DYNAMIC CHARACTERISTICS2

t

(EN) 60 ns typ RL = 300 Ω, CL = 35 pF;

OFF

V

Charge Injection 5 pC typ

OFF Isolation –75 dB typ RL = 1 kΩ f = 100 kHz;
V
Channel-to-Channel Crosstalk 85 dB typ RL = 1 kΩ, f = 100 kHz;
Test Circuit 10
Total Harmonic Distortion, THD + N 0.002 % typ RL = 600 Ω, 5 V rms; f=20 Hz to 20 kHz

−3 dB Bandwidth

50 MHz typ R
CS (OFF) 15 pF typ f = 1 MHz
CD (OFF) f = 1 MHz

ADG1408 100 pF typ
ADG1409 50 pF typ

CD, CS (ON) f = 1 MHz

ADG1408 150 pF typ
ADG1409 75 pF typ

POWER REQUIREMENTS VDD = 13.2 V

IDD 1 1 µA typ Digital inputs= 0 V or VDD
5 5 µA max
IDD 150 µA typ Digital inputs= 5

300 µA max

1

Temperature ranges are as follows: B Version: –40°C to +85° ; T Version: –55°C to +125°.

2

Guaranteed by design, not subject to production test.

DUAL SUPPLY

VDD = 5 V ± 10%, VSS = –5 V ± 10%, GND = 0 V, unless otherwise noted.

Table 3.

Parameter +25ºC −40ºC to +85ºC −40ºC to +125ºC Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range VSS to VDD V
RON 6 Ω typ
7 8 10 Ω max
∆RON 0.5 Ω max
LEAKAGE CURRENTS

Source OFF Leakage IS (OFF) ±0.01 nA typ

±0.5 ±2.5 ±50 nA max
Drain OFF Leakage ID (OFF) VD = ±3.3. V; VS = ±3.3 V;

ADG1408 ±1 ±100 ±100 nA max Test Circuit 3
ADG1409 ±1 ±50 ±50 nA max

Channel ON Leakage ID, IS (ON) VS = VD = ±3.3 V;

ADG1408 ±1 ±100 ±100 nA max Test Circuit 4
ADG1409 ±1 ±50 ±50 nA max

1

= 5 V; Test Circuit 7

S

= 0 V, RS = 0 Ω, CL = 10 nF;

V

S

Test Circuit 8

= 0 V; Test Circuit 9

EN

= 300 Ω, CL = 5 pF; Test Circuit 10

L

V

= ±3.3 V, IS = −10 mA

D

V

= +3.3 V, −3.3 V

D

V

= ±3.3 V, VS = −3.3 V;

D

Test Circuit 2

Rev. PrB | Page 5 of 16