9.5 Ω on resistance @ 25°C
Up to 300 mA of continuous current
Fully specified at ±15 V/+12 V/±5 V
3 V logic-compatible inputs
Rail-to-rail operation
Break-before-make switching action
28-lead TSSOP and 32-lead, 5 mm × 5 mm LFCSP_VQ
APPLICATIONS
Medical equipment
Audio and video routing
Automatic test equipment
Data acquisition systems
Battery-powered systems
Sample-and-hold systems
Communication systems
GENERAL DESCRIPTION
The ADG1406 and ADG1407 are monolithic iCMOS® analog
multiplexers comprising 16 single channels and eight differential
channels, respectively. The ADG1406 switches one of 16 inputs
to a common output, as determined by the 4-bit binary address
lines (A0, A1, A2, and A3). The ADG1407 switches one of eight
differential inputs to a common differential output, as determined
by the 3-bit binary address lines (A0, A1, and A2). An EN input
on both devices enables or disables the device. When disabled,
all channels switch off. When on, each channel conducts equally
well in both directions and has an input signal range that extends
to the supplies.
The iCMOS (industrial CMOS) modular manufacturing
process combines high voltage CMOS (complementary metaloxide semiconductor) and bipolar technologies. It enables the
development of a wide range of high performance analog ICs
capable of 33 V operation in a footprint that no other generation
of high voltage parts has been able to achieve. Unlike analog ICs
using conventional CMOS processes, iCMOS components can
tolerate high supply voltages while providing increased performance, dramatically lower power consumption, and reduced
package size.
The ultralow on resistance and on-resistance flatness of these
switches make them ideal solutions for data acquisition and
gain switching applications where low distortion is critical.
iCMOS construction ensures ultralow power dissipation,
making the parts ideally suited for portable and batterypowered instruments.
Rev. A
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
ADG1406/ADG1407
FUNCTIONAL BLOCK DIAGRAMS
ADG1406
S1
D
16
1-OF-16
DECODER
A0 A1 A2 A3 EN
Figure 1.
ADG1407
S1A
S8A
S1B
S8B
1-OF-8
DECODER
A0 A1 A2 EN
Figure 2.
Table 1. Related Devices
Part No. Description
ADG1206/ADG1207
Low capacitance, low charge injection,
and low leakage 8-/16-channel ±15 V
multiplexers
VDD = +15 V ± 10%, VSS = –15 V ± 10%, GND = 0 V, unless otherwise noted.1
Table 2.
−40°C to
Parameter +25°C
+85°C
ANALOG SWITCH
Analog Signal Range VSS to VDD V
On Resistance (RON) 9.5 Ω typ VDD = +13.5 V, VSS = −13.5 V, VS = ±10 V,
11.5 14 16 Ω max IS = −10 mA; see Figure 27
On-Resistance Match Between 0.55 Ω typ VDD = +13.5 V, VSS = −13.5 V , VS = ±10 V, IS =
Channels (ΔRON) 1 1.5 1.7 Ω max −10 mA
On-Resistance Flatness (R
) 1.6 Ω typ VDD = +13.5 V, VSS = −13.5 V, VS = ±10 V, IS =
FLAT(ON)
1.9 2.15 2.3 Ω max −10 mA
LEAKAGE CURRENTS VDD = +16.5 V, VSS = −16.5 V
Source Off Leakage, IS (Off) ±0.01 nA typ
±0.25 ±1 ±4 nA max
Drain Off Leakage, ID (Off) ±0.01 nA typ
±0.5 ±3 ±20 nA max
Channel On Leakage, ID, IS (On) ±0.05 nA typ VS = VD = ±10 V; see Figure 29
±0.5 ±3 ±20 nA max
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
2.0 V min
INH
0.8 V max
INL
Input Current ±0.002 μA typ VIN = V
±0.1 μA max
Digital Input Capacitance, CIN 3 pF typ
DYNAMIC CHARACTERISTICS2
Transition Time, t
105 ns typ RL = 100 Ω, CL = 35 pF
TRANSITION
160 200 225 ns max VS = 10 V, see Figure 30
Break-Before-Make Time Delay, t
40 ns typ RL = 100 Ω, CL = 35 pF
BBM
10 ns min VS1 = VS2 = 10 V; see Figure 31
tON (EN) 83 ns typ RL = 100 Ω, CL = 35 pF
110 140 155 ns max VS = 10 V; see Figure 32
t
(EN) 98 ns typ RL = 100 Ω, CL = 35 pF
OFF
120 145 165 ns max VS = 10 V; see Figure 32
Charge Injection 10 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF; see Figure 33
Off Isolation −73 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 34
Channel-to-Channel Crosstalk −70 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 35
Total Harmonic Distortion (THD + N) 0.07 % typ
−3 dB Bandwidth RL = 50 Ω, CL = 5 pF; see Figure 36
ADG1406 60 MHz typ
ADG1407 110 MHz typ
Insertion Loss 0.6 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 36
CS (Off) 8 pF typ f = 1 MHz
CD (Off)
ADG1406 90 pF typ f = 1 MHz
ADG1407 45 pF typ f = 1 MHz
−40°C to
+125°C
1
Unit Test Conditions/Comments
VS = ±10 V, VD = ∓10 V; see Figure 28
VS = ±10 V, VD = ∓10 V; see Figure 28
or VDD
GND
= 110 Ω, 15 V p-p, f = 20 Hz to 20 kHz; see
R
L
Figure 37
Rev. A | Page 3 of 20
ADG1406/ADG1407
−40°C to
Parameter +25°C
+85°C
CD, CS (On)
ADG1406 115 pF typ f = 1 MHz
ADG1407 70 pF typ f = 1 MHz
POWER REQUIREMENTS VDD = +16.5 V, VSS = −16.5 V
IDD 0.002 μA typ Digital inputs = 0 V or VDD
1 μA max
IDD 280 μA typ Digital inputs = 5 V
475 μA max
ISS 0.002 μA typ Digital inputs = 0 V, 5 V or VDD
1 μA max
VDD/VSS ±4.5/±16.5 V min/max
1
Temperature range for B version is −40°C to +125°C.
2
Guaranteed by design, not subject to production test.
Analog Signal Range 0 to VDD V
On Resistance (RON) 18 Ω typ VDD = 10.8 V, VSS = 0 V; VS = 0 V to 10 V,
21.5 26 28.5 Ω max IS = −10 mA; see Figure 27
On-Resistance Match Between 0.55 Ω typ VDD = 10.8 V, VSS = 0 V; VS = 0 V to 10 V,
Channels (ΔRON) 1.2 1.6 1.8 Ω max IS = −10 mA
On-Resistance Flatness (R
) 5 Ω typ VDD = 10.8 V, VSS = 0 V; VS = 0 V to 10 V,
FLAT(ON)
6 6.9 7.3 Ω max IS = −10 mA
LEAKAGE CURRENTS VDD = 10.8 V
Source Off Leakage, IS (Off) ±0.01 nA typ
±0.25 ±1 ±4 nA max
Drain Off Leakage, ID (Off) ±0.01 nA typ
±0.5 ±3 ±20 nA max
Channel On Leakage, ID, IS (On) ±0.01 nA typ VS = VD = 1 V or 10 V; see Figure 29
±0.5 ±3 ±20 nA max
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
2.0 V min
INH
0.8 V max
INL
Input Current ±0.002 μA typ VIN = V
±0.1 μA max
Digital Input Capacitance, CIN 4 pF typ
DYNAMIC CHARACTERISTICS
Transition Time, t
TRANSITION
2
170 ns typ RL = 100 Ω, CL = 35 pF
250 310 350 ns max VS = 8 V; see Figure 29
Break-Before-Make Time Delay, t
75 ns typ RL = 100 Ω, CL = 35 pF
BBM
30 ns min VS1 = VS2 = 8 V; see Figure 31
+85°C
−40°C to
+125°C
−40°C to
+125°C
1
Unit Test Conditions/Comments
1
Unit Test Conditions/Comments
= 1 V/10 V, VD = 10 V/1 V; see
V
S
Figure 28
V
Figure 28
= 1 V/10 V, VD = 10 V/1 V; see
S
or VDD
GND
Rev. A | Page 4 of 20
ADG1406/ADG1407
−40°C to
Parameter +25°C
+85°C
tON (EN) 145 ns typ RL = 100 Ω, CL = 35 pF
205 250 285 ns max VS = 8 V; see Figure 31
t
(EN) 112 ns typ RL = 100 Ω, CL = 35 pF
OFF
150 175 200 ns max VS = 8 V; see Figure 31
Charge Injection
10 pC typ
Off Isolation −73 dB typ
Channel-to-Channel Crosstalk −70 dB typ
−3 dB Bandwidth RL = 50 Ω, CL = 5 pF; see Figure 36
ADG1406 35 MHz typ
ADG1407 70 MHz typ
Insertion Loss 0.6 dB typ
CS (Off) 12 pF typ f = 1 MHz
CD (Off)
ADG1406 145 pF typ f = 1 MHz
ADG1407 72 pF typ f = 1 MHz
CD, CS (On)
ADG1406 166 pF typ f = 1 MHz
ADG1407 93 pF typ f = 1 MHz
POWER REQUIREMENTS VDD = 13.2 V
IDD 0.002 μA typ Digital inputs = 0 V or VDD
1 μA max
IDD 150 μA typ Digital inputs = 5 V
475 μA max
VDD 5/16.5 V min/max VSS = 0 V, GND = 0 V
1
Temperature range for B version: −40°C to +125°C.
2
Guaranteed by design, not subject to production test.
−40°C to
+125°C
1
Unit Test Conditions/Comments
= 6 V, RS = 0 Ω, CL = 1 nF; see
V
S
Figure 33
R
see Figure 34
R
see Figure 35
R
see Figure 36
= 50 Ω, CL = 5 pF, f = 1 MHz;
L
= 50 Ω, CL = 5 pF, f = 1 MHz;
L
= 50 Ω, CL = 5 pF, f = 1 MHz;
L
Rev. A | Page 5 of 20
ADG1406/ADG1407
±5 V DUAL SUPPLY
VDD = +5 V ± 10%, VSS = −5 V ± 10%, GND = 0 V, unless otherwise noted.
Table 4.
−40°C to
Parameter +25°C
+85°C
ANALOG SWITCH
Analog Signal Range VSS to VDD V
On Resistance (RON) 21 Ω typ VDD = +4.5 V, VSS = −4.5 V, VS = ±4.5 V,
25 29 32 Ω max IS = −10 mA; see Figure 27
On -Resistance Match Between 0.6 Ω typ VDD = +4.5 V, VSS = −4.5 V, VS = ±4.5V,
Channels (ΔRON) 1.3 1.7 1.9 Ω max IS = −10 mA
On -Resistance Flatness (R
) 5.2 Ω typ VDD = +4.5 V, VSS = −4.5 V, VS = ±4.5 V;
FLAT(ON)
6.4 7.3 7.6 Ω max IS = −10 mA
LEAKAGE CURRENTS VDD = +5.5 V, VSS = −5.5 V
Source Off Leakage, IS (Off) ±0.01 nA typ
±0.25 ±1 ±4 nA max
Drain Off Leakage, ID (Off) ±0.01 nA typ
±0.5 ±3 ±20 nA max
Channel On Leakage, ID, IS (On) ±0.01 nA typ VS = VD = ±4.5 V; see Figure 29
±0.5 ±3 ±20 nA max
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
2.0 V min
INH
0.8 V max
INL
Input Current ±0.002 μA typ VIN = V
±0.1 μA max
Digital Input Capacitance, CIN 3.5 pF typ
DYNAMIC CHARACTERISTICS2
Transition Time, t
260 ns typ RL = 100 Ω, CL = 35 pF
TRANSITION
435 510 565 ns max VS = 5 V; see Figure 30
Break-Before-Make Time Delay, t
90 ns typ RL = 100 Ω, CL = 35 pF
BBM
30 ns min VS1 = VS2 = 5 V; see Figure 31
tON (EN) 230 ns typ RL = 100 Ω, CL = 35 pF
335 400 445 ns max VS = 5 V; see Figure 32
t
(EN) 205 ns typ RL = 100 Ω, CL = 35 pF
OFF
290 340 370 ns max VS = 5 V; see Figure 32
Charge Injection 10 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF; see Figure 33
Off Isolation –73 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 34
Channel-to-Channel Crosstalk –70 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 35
Total Harmonic Distortion, THD + N 0.18 % typ
−3 dB Bandwidth RL = 50 Ω, CL = 5 pF; see Figure 36
ADG1406 40 MHz typ
ADG1407 80 MHz typ
Insertion Loss 1.15 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 36
CS (Off) 10 pF typ f = 1 MHz
CD (Off)
ADG1406 123 pF typ f = 1 MHz
ADG1407 62 pF typ f = 1 MHz
CD, CS (On)
ADG1406 148 pF typ f = 1 MHz
ADG1407 88 pF typ f = 1 MHz
−40°C to
+125°C
1
Unit Test Conditions/Comments
VS = ±4.5 V, VD = ∓4.5 V; see Figure 28
VS = ±4.5 V, VD = ∓4.5 V; see Figure 28
or VDD
GND
= 110 Ω, 5 V p-p, f = 20 Hz to 20 kHz; see
R
L
Figure 37
Rev. A | Page 6 of 20
ADG1406/ADG1407
−40°C to
Parameter +25°C
+85°C
POWER REQUIREMENTS VDD = +5.5 V, VSS = −5.5 V
IDD 0.002 μA typ Digital inputs = 0 V or VDD
1 μA max
ISS 0.002 μA typ Digital inputs = 0 V, 5 V, or VDD
1 μA max
VDD/VSS ±4.5/±16.5 V min/max
1
Temperature range for B version: −40°C to +125°C.
2
Guaranteed by design, not subject to production test.
CONTINUOUS CURRENT PER CHANNEL
Table 5. ADG1406
Parameter 25°C 85°C 125°C Unit Test Conditions/Comments
CONTINUOUS CURRENT PER CHANNEL
15 V Dual Supply VDD = +13.5 V, VSS = −13.5 V
28-Lead TSSOP 180 100 50 mA max
32-Lead LFCSP 300 150 60 mA max
12 V Single Supply VDD = 10.8 V, VSS = 0 V
28-Lead TSSOP 150 90 50 mA max
32-Lead LFCSP 260 130 55 mA max
5 V Dual Supply VDD = +4.5 V, VSS = −4.5 V
28-Lead TSSOP 140 85 45 mA max
32-Lead LFCSP 245 130 55 mA max
1
Guaranteed by design, not subject to production test.
1
−40°C to
+125°C
1
Unit Test Conditions/Comments
Table 6. ADG1407
Parameter 25°C 85°C 125°C Unit Test Conditions/Comments
CONTINUOUS CURRENT PER CHANNEL
1
15 V Dual Supply VDD = +13.5 V, VSS = −13.5 V
28-Lead TSSOP 135 85 45 mA max
32-Lead LFCSP 235 125 55 mA max
12 V Single Supply VDD = 10.8 V, VSS = 0 V
28-Lead TSSOP 110 70 40 mA max
32-Lead LFCSP 190 110 50 mA max
5 V Dual Supply VDD = +4.5 V, VSS = −4.5 V
28-Lead TSSOP 105 65 40 mA max
32-Lead LFCSP 180 100 50 mA max
1
Guaranteed by design, not subject to production test.
Rev. A | Page 7 of 20
ADG1406/ADG1407
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 7.
Parameter Rating
V
to VSS 35 V
DD
VDD to GND −0.3 V to +25 V
V
to GND +0.3 V to −25 V
SS
Analog, Digital Inputs1
Continuous Current, Sx or Dx Pins
Peak Current, Sx or Dx Pins (Pulsed
at 1 ms, 10% Duty Cycle
Maximum)
28-Lead TSSOP 300 mA
32-Lead LFCSP_VQ 550 mA
Operating Temperature Range
Industrial (B Version) –40°C to +125°C
Storage Temperature Range –65°C to +150°C
Junction Temperature 150°C
Reflow Soldering, Pb-Free
Peak Temperature 260 (+0/−5)°C
Time at Peak Temperature 10 sec to 40 sec
1
Overvoltages at the Ax, EN, Sx, or Dx pins are clamped by internal diodes.
Limit current to the maximum ratings given.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
Only one absolute maximum rating may be applied at any
one time.
− 0.3 V to VDD + 0.3 V
V
SS
or 30 mA, whichever
occurs first
Table 5 and Tab l e 6
specifications + 15%
THERMAL RESISTANCE
θJA is specified for the worst-case conditions, that is, a device
soldered in a circuit board for surface-mount packages.
1 31 VDD Most Positive Power Supply Potential.
2, 3, 13
12, 13, 26,
NC No Connect.
27, 28, 30, 32
4 1 S16 Source Terminal 16. This pin can be an input or an output.
5 2 S15 Source Terminal 15. This pin can be an input or an output.
6 3 S14 Source Terminal 14. This pin can be an input or an output.
7 4 S13 Source Terminal 13. This pin can be an input or an output.
8 5 S12 Source Terminal 12. This pin can be an input or an output.
9 6 S11 Source Terminal 11. This pin can be an input or an output.
10 7 S10 Source Terminal 10. This pin can be an input or an output.
11 8 S9 Source Terminal 9. This pin can be an input or an output.
12 9 GND Ground (0 V) Reference.
14 10 A3 Logic Control Input.
15 11 A2 Logic Control Input.
16 14 A1 Logic Control Input.
17 15 A0 Logic Control Input.
18 16 EN
Active High Digital Input. When this pin is low, the device is disabled and all switches are
turned off. When this pin is high, the Ax logic inputs determine which switch is turned on.
19 17 S1 Source Terminal 1. This pin can be an input or an output.
20 18 S2 Source Terminal 2. This pin can be an input or an output.
21 19 S3 Source Terminal 3. This pin can be an input or an output.
22 20 S4 Source Terminal 4. This pin can be an input or an output.
23 21 S5 Source Terminal 5. This pin can be an input or an output.
24 22 S6 Source Terminal 6. This pin can be an input or an output.
25 23 S7 Source Terminal 7. This pin can be an input or an output.
26 24 S8 Source Terminal 8. This pin can be an input or an output.
27 25 VSS
Most Negative Power Supply Potential. In single-supply applications, this pin can be
connected to ground. The exposed pad is tied to the substrate, V
28 29 D Drain Terminal. This pin can be an input or an output.
1 29 VDD Most Positive Power Supply Potential.
2 31 DB Drain Terminal B. This pin can be an input or an output.
3, 13, 14
11, 12, 13, 26,
NC No Connect.
28, 30, 32
4 1 S8B Source Terminal 8B. This pin can be an input or an output.
5 2 S7B Source Terminal 7B. This pin can be an input or an output.
6 3 S6B Source Terminal 6B. This pin can be an input or an output.
7 4 S5B Source Terminal 5B. This pin can be an input or an output.
8 5 S4B Source Terminal 4B. This pin can be an input or an output.
9 6 S3B Source Terminal 3B. This pin can be an input or an output.
10 7 S2B Source Terminal 2B. This pin can be an input or an output.
11 8 S1B Source Terminal 1B. This pin can be an input or an output.
12 9 GND Ground (0 V) Reference.
15 10 A2 Logic Control Input.
16 14 A1 Logic Control Input.
17 15 A0 Logic Control Input.
18 16 EN
Active High Digital Input. When this pin is low, the device is disabled and all switches are
turned off. When this pin is high, the Ax logic inputs determine which switch is turned on.
19 17 S1A Source Terminal 1A. This pin can be an input or an output.
20 18 S2A Source Terminal 2A. This pin can be an input or an output.
21 19 S3A Source Terminal 3A. This pin can be an input or an output.
22 20 S4A Source Terminal 4A. This pin can be an input or an output.
23 21 S5A Source Terminal 5A. This pin can be an input or an output.
24 22 S6A Source Terminal 6A. This pin can be an input or an output.
25 23 S7A Source Terminal 7A. This pin can be an input or an output.
26 24 S8A Source Terminal 8A. This pin can be an input or an output.
27 25 VSS
Most Negative Power Supply Potential. In single-supply applications, this pin can be
connected to ground. The exposed pad is tied to the substrate, V
28 27 DA Drain Terminal A. This pin can be an input or an output.
Figure 7. On Resistance as a Function of VD (VS), Dual Supply
35
30
25
20
15
ON RESISTANCE (Ω)
10
5
TA = 25°C
I
= –10mA
S
0
–7–17
Figure 8. On Resistance as a Function of V
40
35
30
25
20
15
ON RESISTANCE (Ω)
10
5
T
A
I
= –10mA
S
0
VDD = +3.V
V
= –3.V
SS
VDD = +4.5V
V
= –4.5V
SS
VDD = +5.0V
V
= –5.0V
SS
VDD = +7V
V
= –7V
SS
–51–335
= 25°C
1.50
3.04.56.07.59.0 10.5 12.0 13.5
VS, VD (V)
VDD = +5V
V
= 0V
SS
VDD = +10.8V
V
SS
VDD = +15V
V
SS
VS, VD (V)
= 0V
= 0V
(Vs), Dual Supply
D
VDD = +8V
V
= 0V
SS
VDD = +12V
V
SS
VDD = +13.2V
V
VDD = +5.5V
V
= –5.5V
SS
= 0V
= 0V
SS
Figure 9. On Resistance as a Function of VD (VS), Single Supply
15.0
9
6
ON RESISTANCE (Ω)
3
VDD = +15V
V
= –15V
07419-006
SS
0
–15–10–5051015
TA = +85°C
TA = +25°C
TA = –40°C
07419-009
VS, VD (V)
Figure 10. On Resistance as a Function of VD (VS)
for Different Temperatures, 15 V Dual Supply
30
25
20
15
10
ON RESISTANCE (Ω)
5
VDD = +5V
V
= –5V
07419-007
SS
0
–5–3–4–20–13214
TA = +125°C
TA = +85°C
TA = +25°C
TA = –40°C
VS, VD (V)
07419-010
5
Figure 11. On Resistance as a Function of VD (VS)
for Different Temperatures, 5 V Dual Supply
25
20
15
10
ON RESISTANCE (Ω)
5
VDD = +12V
V
= 0V
SS
07419-008
0
01108642
TA = +125°C
TA = +85°C
TA = +25°C
TA = –40°C
VS, VD (V)
07419-011
2
Figure 12. On Resistance as a Function of VD (VS)
for Different Temperatures, 12 V Single Supply
Rev. A | Page 13 of 20
ADG1406/ADG1407
1.0
VDD = +15V
0.8
V
= –15V
SS
V
0.6
0.4
0.2
0
–0.2
–0.4
–0.6
LEAKAGE CURRENT (n A)
–0.8
–1.0
–1.2
–1.4
01020304050
Figure 13. Leakage Current as a Function of Temperature (up to 85°C),
8
6
4
2
0
–2
–4
LEAKAGE CURRENT (n A)
–6
–8
–10
0
Figure 14. Leakage Current as a Function of Temperature,
7
6
5
4
3
2
1
0
–1
LEAKAGE CURRENT (n A)
–2
–3
–4
0
Figure 15. Leakage Current as a Function of Temperature,
= +10V/–10V
BIAS
IS (OFF) +–
I
(OFF) +–
D
I
(OFF) –+
S
I
(OFF) –+
D
I
, IS (ON) ++
D
I
, IS (ON) ––
D
VDD = +15V
V
= –15V
SS
V
= +10V/–10V
BIAS
IS (OFF) +–
I
(OFF) +–
D
I
(OFF) –+
S
I
(OFF) –+
D
I
, IS (ON) ++
D
I
, IS (ON) ––
D
VDD = +5V
= –5V
V
SS
= +4.5V/–4.5V
V
BIAS
IS (OFF) +–
(OFF) +–
I
D
(OFF) –+
I
S
(OFF) –+
I
D
, IS (ON) ++
I
D
, IS (ON) ––
I
D
TEMPERATURE ( °C)
607080
15 V Dual Supply
TEMPERATURE ( °C)
15 V Dual Supply
TEMPERATURE ( °C)
5 V Dual Supply
14
VDD = +12V
12
V
= 0V
SS
V
= +1V/+10V
BIAS
10
8
IS (OFF) +–
I
(OFF) +–
D
6
I
(OFF) –+
S
I
(OFF) –+
4
D
I
, IS (ON) ++
D
I
, IS (ON) ––
2
D
LEAKAGE CURRENT (n A)
0
–2
07419-012
–4
0
07419-015
12010080604020
TEMPERATURE ( °C)
Figure 16. Leakage Current as a Function of Temperature,
12 V Single Supply
160
T
= 25°C
140
A
I
PER LOGI C INPUT
DD
120
100
(µA)
80
DD
I
60
= +12V
V
40
20
07419-013
12010080604020
0
01.54.59.015.0
DD
V
= 0V
SS
= +5V
V
DD
V
= –5V
SS
3.07.512. 06.010.513.5
V
V
DD
= –15V
SS
= +15V
07419-016
LOGIC LEVEL (Ax, EN) (V)
Figure 17. IDD vs. Logic Level
100
TA = 25°C
80
60
40
20
VDD = +5V
V
= –5V
SS
0
–20
CHARGE INJECTI ON (pC)
–40
VDD = +15V
V
= –15V
SS
VDD = +12V
V
= 0V
SS
–60
07419-014
12010080604020
–80
–15–10–5051015
07419-017
VS (V)
Figure 18. Charge Injection vs. Source Voltage
Rev. A | Page 14 of 20
ADG1406/ADG1407
350
300
250
200
150
TIME (ns)
100
50
VDD = +12V
V
VDD = +15V
V
= –15V
SS
VDD = +5V
V
= +5V
SS
= 0V
SS
CROSSTALK (d B)
–20
–40
–60
–80
–100
0
VDD = +15V
V
SS
T
A
= –15V
= 25°C
ADJACENT CHANNELS
(S1A TO S2A)
ADJACENT SWITCHES
(S1A TO S1B)
0
–400–2040206080100120
TEMPERATURE (° C)
Figure 19. Transition Time vs. Temperature
0
VDD = +15V
V
= –15V
SS
T
= 25°C
–20
A
–40
–60
–80
OFF ISOLATIO N (dB)
–100
–120
10k
1k
100k1M10M100M1G
FREQUENCY (Hz)
Figure 20. Off Isolation vs. Frequency
–10
VDD = +15V
V
= –15V
SS
T
= 25°C
A
–30
–50
–70
–90
CROSSTALK (dB)
–110
–130
07419-018
–120
10k
1k
100k1M10M100M1G
FREQUENCY (Hz)
07419-021
Figure 22. ADG1407 Crosstalk vs. Frequency
0
–0.5
–1.0
–1.5
–2.0
–2.5
INSERTION LOSS (dB)
–3.0
VDD = +15V
V
= –15V
SS
T
= 25°C
A
–3.5
–4.0
07419-019
100
10k1k
100k1M10M100M
FREQUENCY (Hz)
07419-022
Figure 23. ADG1406 On Response vs. Frequency
0.14
0.12
0.10
0.08
0.06
THD + N (%)
0.04
0.02
VS = 20V p-p
VS = 15V p-p
VS = 10V p-p
VDD = +15V
= –15V
V
SS
= 25°C
T
A
= 100Ω
R
L
–150
10k
1k
100k1M10M100M1G
FREQUENCY (Hz)
Figure 21. ADG1406 Crosstalk vs. Frequency
07419-020
Rev. A | Page 15 of 20
0
0281420
4101661218
FREQUENCY (kHz)
Figure 24. THD + N vs. Frequency, 15 V Dual Supply
07419-023
ADG1406/ADG1407
1.2
1.0
0.8
0.6
THD + N (%)
0.4
0.2
0
0281420
Figure 25. THD + N vs. Frequency, 5 V Dual Supply
VS = 10V p-p
VS = 5V p-p
VS = 2.5V p-p
4101661218
FREQUENCY (kHz)
VDD = +5V
= –5V
V
SS
= 25°C
T
A
=110Ω
R
L
0
VDD = +15V
= –15V
V
SS
= 25°C
T
A
–20
V p-p = 0.63V
–40
NO DECOUPLI NG
–60
ACPSRR (dB)
–80
–100
07419-024
–120
100
CAPACITORS
10k100k
FREQUENCY (Hz)
DECOUPLING
CAPACITORS
ON SUPPLIES
1M
10M1k
07419-025
Figure 26. ACPSRR vs. Frequency
Rev. A | Page 16 of 20
ADG1406/ADG1407
TERMINOLOGY
t
RON
Ohmic resistance between the D and S terminals.
ΔR
ON
Difference between the R
FLAT(ON)
R
of any two channels.
ON
Flatness is defined as the difference between the maximum and
minimum value of on resistance as measured.
I
(Off)
S
Source leakage current when the switch is off.
I
(Off)
D
Drain leakage current when the switch is off.
I
, IS (On)
D
Channel leakage current when the switch is on.
V
, VS
D
Analog voltage on Terminal D and Terminal S.
C
(Off)
S
Channel input capacitance for the off condition.
C
(Off)
D
Channel output capacitance for the off condition.
C
, CS (On)
D
On switch capacitance.
C
IN
Digital input capacitance.
t
(EN)
ON
Delay time between the 50% and 90% points of the digital input
and the switch on condition.
t
(EN)
OFF
Delay time between the 50% and 90% points of the digital input
and the switch off condition.
t
TRANSITION
Delay time between the 50% and 90% points of the digital
inputs and the switch on condition when switching from one
address state to another.
BBM
Off time measured between the 80% points of the switches
when switching from one address state to another.
V
INL
Maximum input voltage for Logic 0.
V
INH
Minimum input voltage for Logic 1.
I
, I
INL
INH
Input current of the digital input.
I
DD
Positive supply current.
I
SS
Negative supply current.
Off Isolation
A measure of unwanted signal coupling through an off channel.
Charge Injection
A measure of the glitch impulse transferred from the digital
input to the analog output during switching.
Bandwidth
The frequency at which the output is attenuated by 3 dB.
On Response
The frequency response of the on switch.
THD + N
The ratio of the harmonic amplitude plus noise of the signal to
the fundamental.
ACPSRR (AC Power Supply Rejection Ratio)
Measures the ability of a part to avoid coupling noise and
spurious signals that appear on the supply voltage pin to the
output of the switch. The dc voltage on the device is modulated by a sine wave of 0.62 V p-p. The ratio of the amplitude
of signal on the output to the amplitude of the modulation is
the ACPSRR.
Rev. A | Page 17 of 20
ADG1406/ADG1407
TEST CIRCUITS
V
SD
V
S
Figure 27. On Resistance
3V
ADDRESS
DRIVE (V
0V
t
TRANSITION
OUTPUT
)
IN
I
DS
07419-125
50%50%
90%
IS(OFF)ID(OFF)
V
S
SD
AA
Figure 28. Off Leakage
t
< 20ns
r
t
< 20ns
f
V
IN
t
TRANSITION
90%
V
D
50Ω
2.4VEN
07419-026
V
DD
V
DD
A0
A1
A2
A3
ADG1406
GND
V
SS
V
SS
S2 TO S15
S16
1
SD
NC
NC = NO CONNECT
Figure 29. On Leakage
S1
D
OUTPUT
300Ω
V
S1
V
S16
35pF
ID(ON)
A
V
D
07419-027
ADDRESS
DRIVE (V
OUTPUT
3V
ENABLE
DRIVE (V
0V
OUTPUT
1
SIMILAR CO NNECTION F OR ADG1407.
Figure 30. Address to Output Switching Times, t
3V
)
IN
0V
80%80%
t
BBM
V
IN
50Ω
Figure 31. Break-Before-Make Delay, t
)
IN
t
(EN)
ON
50%50%
0.9V
OUT
0.9V
t
(EN)
OFF
OUT
V
IN
TRANSITION
V
DDVSS
V
DDVSS
A0
A1
A2
A3
ADG1406
2.4VEN
1
SIMILAR CO NNECTION F OR ADG1407.
BBM
A0
A1
A2
A3
EN
50Ω
S1
S2 TO S15
S16
1
GND
V
V
DD
V
V
DD
S2 TO S16
ADG1406
GND
D
SS
SS
OUTPUT
S1
1
D
300Ω
OUTPUT
300Ω
V
V
S
S
35pF
35pF
07419-028
07419-029
Figure 32. Enable Delay, t
Rev. A | Page 18 of 20
ON
1
SIMILAR CO NNECTION F OR ADG1407.
(EN), t
(EN)
OFF
07419-030
ADG1406/ADG1407
3V
V
V
DD
SS
V
V
DD
A0
SS
A1
V
IN
A2
A3
ADG1406
S
EN
GND
1
D
C
1nF
V
OUT
L
07419-031
V
IN
R
S
V
OUT
Q
INJ
= CL × ΔV
OUT
ΔV
OUT
V
S
1
SIMILAR CO NNECTION F OR ADG1407.
Figure 33. Charge Injection
0.1µF
V
V
DD
V
SS
0.1µF
NETWORK
V
DD
SS
S
50Ω
D
GND
ANALYZER
50Ω
V
V
OUT
R
L
50Ω
S
NETWORK
ANALYZER
V
OUT
R
L
50Ω
V
S
V
0.1µF
S1
V
DD
SS
0.1µF
V
S2
V
DD
SS
D
R
50Ω
GND
0.1µF
V
OFF ISOLATION = 20 log
OUT
V
S
07419-032
Figure 34. Off Isolation
V
V
DD
V
SS
0.1µF
NETWORK
V
DD
SS
S
D
GND
ANALYZER
50Ω
V
V
OUT
R
L
50Ω
S
CHANNEL-TO-CHANNEL CROSSTALK = 20 log
Figure 36. Channel-to-Channel Crosstalk
V
0.1µF
IN
V
IN
V
DD
V
SS
0.1µF
V
DD
SS
S
D
GND
WITH SWITCH
V
INSERTION LOSS = 20 log
Figure 35. Bandwidth
OUT
WITHOUT SWITCH
V
OUT
07419-033
Figure 37. THD + Noise
R
L
10kΩ
V
OUT
V
S
AUDIO PRECISION
R
S
V
S
V p-p
V
OUT
07419-034
07419-035
Rev. A | Page 19 of 20
ADG1406/ADG1407
C
Y
C
OUTLINE DIMENSIONS
9.80
9.70
9.60
INDI
1.00
0.85
0.80
PIN 1
ATO R
12° MAX
SEATING
PLANE
PIN 1
0.15
0.05
OPLANARIT
0.10
28
0.65
BSC
0.30
0.19
COMPLIANT TO JEDEC STANDARDS MO-153-AE
1.20 MAX
SEATING
PLANE
15
4.50
4.40
4.30
0.20
0.09
6.40 BSC
141
Figure 38. 28-Lead Thin Shrink Small Outline Package [TSSOP]
(RU-28)
Dimensions shown in millimeters
0.08
0.60 MAX
25
24
(BOTTOM VIEW)
17
16
5.00
BSC SQ
TOP
VIEW
0.80 MAX
0.65 TYP
0.30
0.23
0.18
COMPLIANT TO JEDEC STANDARDS MO-220-VHHD-2
4.75
BSC SQ
0.20 REF
0.05 MAX
0.02 NOM
0.60 MAX
0.50
BSC
0.50
0.40
0.30
COPLANARIT Y
Figure 39. 32-Lead Lead Frame Chip Scale Package [LFCSP_VQ]
5 mm × 5 mm Body, Very Thin Quad
(CP-32-2)
Dimensions shown in millimeters
8°
0°
0.75
0.60
0.45
PIN 1
32
EXPOSED
PAD
9
3.50 REF
FOR PROPER CONNECTION O F
THE EXPOSED PAD, REFER TO
THE PIN CONF IGURATIO N AND
FUNCTION DESCRIPTIONS
SECTION OF THIS DATA SHEET.
INDICATOR
1
3.25
3.10 SQ
2.95
8
0.25 MIN
011708-A
ORDERING GUIDE
Model Temperature Range Description Package Option
ADG1406BRUZ
ADG1406BRUZ-REEL71 −40°C to +125°C 28-Lead Thin Shrink Small Outline Package [TSSOP] RU-28
ADG1406BCPZ-REEL71 −40°C to +125°C 32-Lead Lead Frame Chip Scale Package [LFCSP_VQ] CP-32-2
ADG1407BRUZ
ADG1407BRUZ-REEL7
ADG1407BCPZ-REEL7