ANALOG DEVICES ADG1406, ADG1407 Service Manual

9.5 Ω RON, 16-Channel, Differential 8-Channel,

S

±15 V/+12 V/±5 V iCMOS Multiplexers

FEATURES

9.5 Ω on resistance @ 25°C Up to 300 mA of continuous current Fully specified at ±15 V/+12 V/±5 V 3 V logic-compatible inputs Rail-to-rail operation Break-before-make switching action 28-lead TSSOP and 32-lead, 5 mm × 5 mm LFCSP_VQ

APPLICATIONS

Medical equipment Audio and video routing Automatic test equipment Data acquisition systems Battery-powered systems Sample-and-hold systems Communication systems

GENERAL DESCRIPTION

The ADG1406 and ADG1407 are monolithic iCMOS® analog multiplexers comprising 16 single channels and eight differential channels, respectively. The ADG1406 switches one of 16 inputs to a common output, as determined by the 4-bit binary address lines (A0, A1, A2, and A3). The ADG1407 switches one of eight differential inputs to a common differential output, as determined by the 3-bit binary address lines (A0, A1, and A2). An EN input on both devices enables or disables the device. When disabled, all channels switch off. When on, each channel conducts equally well in both directions and has an input signal range that extends to the supplies.

The iCMOS (industrial CMOS) modular manufacturing process combines high voltage CMOS (complementary metaloxide semiconductor) and bipolar technologies. It enables the development of a wide range of high performance analog ICs capable of 33 V operation in a footprint that no other generation of high voltage parts has been able to achieve. Unlike analog ICs using conventional CMOS processes, iCMOS components can tolerate high supply voltages while providing increased performance, dramatically lower power consumption, and reduced package size.

The ultralow on resistance and on-resistance flatness of these switches make them ideal solutions for data acquisition and gain switching applications where low distortion is critical. iCMOS construction ensures ultralow power dissipation, making the parts ideally suited for portable and batterypowered instruments.

Rev. A

Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.

ADG1406/ADG1407

FUNCTIONAL BLOCK DIAGRAMS

ADG1406

S1

D

16

1-OF-16

DECODER

A0 A1 A2 A3 EN

Figure 1.

ADG1407

S1A

S8A

S1B

S8B

1-OF-8

DECODER

A0 A1 A2 EN

Figure 2.

Table 1. Related Devices

Part No. Description

ADG1206/ADG1207

Low capacitance, low charge injection, and low leakage 8-/16-channel ±15 V multiplexers

DA

DB

07419-001

07419-002

ADG1406/ADG1407

REVISION HISTORY

3/09—Rev. 0 to Rev. A

Change to I Change to I

Changes to Figure 16 ...................................................................... 14

8/08—Revision 0: Initial Version

Parameter, Table 2 ................................................... 4

DD

Parameter, Table 3 ................................................... 5

DD

Absolute Maximum Ratings ............................................................8

Thermal Resistance .......................................................................8

ESD Caution...................................................................................8

Pin Configurations and Function Descriptions ............................9

Typical Performance Characteristics ........................................... 13

Terminology .................................................................................... 17

Test Circuits ..................................................................................... 18

Outline Dimensions ....................................................................... 20

Ordering Guide .......................................................................... 20

Rev. A | Page 2 of 20

ADG1406/ADG1407

SPECIFICATIONS

±15 V DUAL SUPPLY

VDD = +15 V ± 10%, VSS = –15 V ± 10%, GND = 0 V, unless otherwise noted.1

Table 2.

−40°C to

Parameter +25°C

+85°C

ANALOG SWITCH

Analog Signal Range VSS to VDD V On Resistance (RON) 9.5 Ω typ VDD = +13.5 V, VSS = −13.5 V, VS = ±10 V,

11.5 14 16 Ω max IS = −10 mA; see Figure 27 On-Resistance Match Between 0.55 Ω typ VDD = +13.5 V, VSS = −13.5 V , VS = ±10 V, IS =

Channels (ΔRON) 1 1.5 1.7 Ω max −10 mA

On-Resistance Flatness (R

) 1.6 Ω typ VDD = +13.5 V, VSS = −13.5 V, VS = ±10 V, IS =

FLAT(ON)

1.9 2.15 2.3 Ω max −10 mA

LEAKAGE CURRENTS VDD = +16.5 V, VSS = −16.5 V

Source Off Leakage, IS (Off) ±0.01 nA typ

±0.25 ±1 ±4 nA max Drain Off Leakage, ID (Off) ±0.01 nA typ

±0.5 ±3 ±20 nA max Channel On Leakage, ID, IS (On) ±0.05 nA typ VS = VD = ±10 V; see Figure 29 ±0.5 ±3 ±20 nA max

DIGITAL INPUTS

Input High Voltage, V Input Low Voltage, V

2.0 V min

INH

0.8 V max

INL

Input Current ±0.002 μA typ VIN = V ±0.1 μA max Digital Input Capacitance, CIN 3 pF typ

DYNAMIC CHARACTERISTICS2

Transition Time, t

105 ns typ RL = 100 Ω, CL = 35 pF

TRANSITION

160 200 225 ns max VS = 10 V, see Figure 30 Break-Before-Make Time Delay, t

40 ns typ RL = 100 Ω, CL = 35 pF

BBM

10 ns min VS1 = VS2 = 10 V; see Figure 31 tON (EN) 83 ns typ RL = 100 Ω, CL = 35 pF 110 140 155 ns max VS = 10 V; see Figure 32 t

(EN) 98 ns typ RL = 100 Ω, CL = 35 pF

OFF

120 145 165 ns max VS = 10 V; see Figure 32 Charge Injection 10 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF; see Figure 33 Off Isolation −73 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 34 Channel-to-Channel Crosstalk −70 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 35 Total Harmonic Distortion (THD + N) 0.07 % typ

−3 dB Bandwidth RL = 50 Ω, CL = 5 pF; see Figure 36 ADG1406 60 MHz typ ADG1407 110 MHz typ

Insertion Loss 0.6 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 36 CS (Off) 8 pF typ f = 1 MHz CD (Off)

ADG1406 90 pF typ f = 1 MHz ADG1407 45 pF typ f = 1 MHz

−40°C to +125°C

1

Unit Test Conditions/Comments

VS = ±10 V, VD = ∓10 V; see Figure 28

or VDD

GND

= 110 Ω, 15 V p-p, f = 20 Hz to 20 kHz; see

R

L

Figure 37

Rev. A | Page 3 of 20

ADG1406/ADG1407

−40°C to

Parameter +25°C

+85°C

CD, CS (On)

ADG1406 115 pF typ f = 1 MHz ADG1407 70 pF typ f = 1 MHz

POWER REQUIREMENTS VDD = +16.5 V, VSS = −16.5 V

IDD 0.002 μA typ Digital inputs = 0 V or VDD 1 μA max IDD 280 μA typ Digital inputs = 5 V 475 μA max ISS 0.002 μA typ Digital inputs = 0 V, 5 V or VDD 1 μA max VDD/VSS ±4.5/±16.5 V min/max

1

Temperature range for B version is −40°C to +125°C.

2

Guaranteed by design, not subject to production test.

12 V SINGLE SUPPLY

VDD = 12 V ± 10%, VSS = 0 V, GND = 0 V, unless otherwise noted.

Table 3.

−40°C to

Parameter +25°C

ANALOG SWITCH

Analog Signal Range 0 to VDD V On Resistance (RON) 18 Ω typ VDD = 10.8 V, VSS = 0 V; VS = 0 V to 10 V,

21.5 26 28.5 Ω max IS = −10 mA; see Figure 27 On-Resistance Match Between 0.55 Ω typ VDD = 10.8 V, VSS = 0 V; VS = 0 V to 10 V,

Channels (ΔRON) 1.2 1.6 1.8 Ω max IS = −10 mA

On-Resistance Flatness (R

) 5 Ω typ VDD = 10.8 V, VSS = 0 V; VS = 0 V to 10 V,

FLAT(ON)

6 6.9 7.3 Ω max IS = −10 mA

LEAKAGE CURRENTS VDD = 10.8 V

Source Off Leakage, IS (Off) ±0.01 nA typ

±0.25 ±1 ±4 nA max Drain Off Leakage, ID (Off) ±0.01 nA typ

±0.5 ±3 ±20 nA max

Channel On Leakage, ID, IS (On) ±0.01 nA typ VS = VD = 1 V or 10 V; see Figure 29

±0.5 ±3 ±20 nA max

DIGITAL INPUTS

Input High Voltage, V Input Low Voltage, V

2.0 V min

INH

0.8 V max

INL

Input Current ±0.002 μA typ VIN = V ±0.1 μA max Digital Input Capacitance, CIN 4 pF typ

DYNAMIC CHARACTERISTICS

Transition Time, t

TRANSITION

2

170 ns typ RL = 100 Ω, CL = 35 pF 250 310 350 ns max VS = 8 V; see Figure 29 Break-Before-Make Time Delay, t

75 ns typ RL = 100 Ω, CL = 35 pF

BBM

30 ns min VS1 = VS2 = 8 V; see Figure 31

+85°C

−40°C to +125°C

1

Unit Test Conditions/Comments

1

Unit Test Conditions/Comments

= 1 V/10 V, VD = 10 V/1 V; see

V

S

Figure 28

V Figure 28

= 1 V/10 V, VD = 10 V/1 V; see

S

or VDD

GND

Rev. A | Page 4 of 20

ADG1406/ADG1407

−40°C to

Parameter +25°C

+85°C

tON (EN) 145 ns typ RL = 100 Ω, CL = 35 pF 205 250 285 ns max VS = 8 V; see Figure 31 t

(EN) 112 ns typ RL = 100 Ω, CL = 35 pF

OFF

150 175 200 ns max VS = 8 V; see Figure 31

Charge Injection

10 pC typ

Off Isolation −73 dB typ

Channel-to-Channel Crosstalk −70 dB typ

−3 dB Bandwidth RL = 50 Ω, CL = 5 pF; see Figure 36 ADG1406 35 MHz typ ADG1407 70 MHz typ

Insertion Loss 0.6 dB typ

CS (Off) 12 pF typ f = 1 MHz CD (Off)

ADG1406 145 pF typ f = 1 MHz ADG1407 72 pF typ f = 1 MHz

CD, CS (On)

ADG1406 166 pF typ f = 1 MHz ADG1407 93 pF typ f = 1 MHz

POWER REQUIREMENTS VDD = 13.2 V

IDD 0.002 μA typ Digital inputs = 0 V or VDD 1 μA max IDD 150 μA typ Digital inputs = 5 V

475 μA max

VDD 5/16.5 V min/max VSS = 0 V, GND = 0 V

1

Temperature range for B version: −40°C to +125°C.

2

Guaranteed by design, not subject to production test.

−40°C to +125°C

1

Unit Test Conditions/Comments

= 6 V, RS = 0 Ω, CL = 1 nF; see

V

S

Figure 33 R

see Figure 34 R

see Figure 35

R see Figure 36

= 50 Ω, CL = 5 pF, f = 1 MHz;

L

= 50 Ω, CL = 5 pF, f = 1 MHz;

L

= 50 Ω, CL = 5 pF, f = 1 MHz;

L

Rev. A | Page 5 of 20

ADG1406/ADG1407

±5 V DUAL SUPPLY

VDD = +5 V ± 10%, VSS = −5 V ± 10%, GND = 0 V, unless otherwise noted.

Table 4.

−40°C to

Parameter +25°C

+85°C

ANALOG SWITCH

Analog Signal Range VSS to VDD V On Resistance (RON) 21 Ω typ VDD = +4.5 V, VSS = −4.5 V, VS = ±4.5 V, 25 29 32 Ω max IS = −10 mA; see Figure 27 On -Resistance Match Between 0.6 Ω typ VDD = +4.5 V, VSS = −4.5 V, VS = ±4.5V,

Channels (ΔRON) 1.3 1.7 1.9 Ω max IS = −10 mA

On -Resistance Flatness (R

) 5.2 Ω typ VDD = +4.5 V, VSS = −4.5 V, VS = ±4.5 V;

FLAT(ON)

6.4 7.3 7.6 Ω max IS = −10 mA

LEAKAGE CURRENTS VDD = +5.5 V, VSS = −5.5 V

Source Off Leakage, IS (Off) ±0.01 nA typ

±0.25 ±1 ±4 nA max Drain Off Leakage, ID (Off) ±0.01 nA typ

±0.5 ±3 ±20 nA max

Channel On Leakage, ID, IS (On) ±0.01 nA typ VS = VD = ±4.5 V; see Figure 29

±0.5 ±3 ±20 nA max

DIGITAL INPUTS

Input High Voltage, V Input Low Voltage, V

2.0 V min

INH

0.8 V max

INL

Input Current ±0.002 μA typ VIN = V ±0.1 μA max Digital Input Capacitance, CIN 3.5 pF typ

DYNAMIC CHARACTERISTICS2

Transition Time, t

260 ns typ RL = 100 Ω, CL = 35 pF

TRANSITION

435 510 565 ns max VS = 5 V; see Figure 30 Break-Before-Make Time Delay, t

90 ns typ RL = 100 Ω, CL = 35 pF

BBM

30 ns min VS1 = VS2 = 5 V; see Figure 31 tON (EN) 230 ns typ RL = 100 Ω, CL = 35 pF 335 400 445 ns max VS = 5 V; see Figure 32 t

(EN) 205 ns typ RL = 100 Ω, CL = 35 pF

OFF

290 340 370 ns max VS = 5 V; see Figure 32 Charge Injection 10 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF; see Figure 33 Off Isolation –73 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 34 Channel-to-Channel Crosstalk –70 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 35 Total Harmonic Distortion, THD + N 0.18 % typ

−3 dB Bandwidth RL = 50 Ω, CL = 5 pF; see Figure 36 ADG1406 40 MHz typ ADG1407 80 MHz typ

Insertion Loss 1.15 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 36 CS (Off) 10 pF typ f = 1 MHz CD (Off)

ADG1406 123 pF typ f = 1 MHz ADG1407 62 pF typ f = 1 MHz

CD, CS (On)

ADG1406 148 pF typ f = 1 MHz ADG1407 88 pF typ f = 1 MHz

−40°C to +125°C

1

Unit Test Conditions/Comments

VS = ±4.5 V, VD = ∓4.5 V; see Figure 28

or VDD

GND

= 110 Ω, 5 V p-p, f = 20 Hz to 20 kHz; see

R

L

Figure 37

Rev. A | Page 6 of 20

ANALOG DEVICES ADG1406, ADG1407 Service Manual

FEATURES

APPLICATIONS

GENERAL DESCRIPTION

FUNCTIONAL BLOCK DIAGRAMS

TABLE OF CONTENTS

REVISION HISTORY

SPECIFICATIONS

±15 V DUAL SUPPLY

12 V SINGLE SUPPLY

±5 V DUAL SUPPLY