ANALOG DEVICES ADG1404 Service Manual

1.5 Ω On Resistance,

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FEATURES

1.5 Ω on resistance

0.3 Ω on-resistance flatness

0.1 Ω on-resistance match between channels Up to 400 mA continuous current Fully specified at +12 V, ±15 V, and ±5 V No V

supply required

L

3 V logic-compatible inputs Rail-to-rail operation 14-lead TSSOP and 4 mm × 4 mm, 16-lead LFCSP

APPLICATIONS

Automatic test equipment Data acquisition systems Battery-powered systems Sample-and-hold systems Audio signal routing Communication systems Relay replacement

±15 V/12 V/±5 V, 4:1, iCMOS Multiplexer

ADG1404

FUNCTIONAL BLOCK DIAGRAM

ADG1404

S1

S2

S3

S4

1 OF 4

DECODER

A0 A1 EN

Figure 1.

D

06816-001

GENERAL DESCRIPTION

The ADG1404 is a complementary metal-oxide semiconductor (CMOS) analog multiplexer, comprising four single channels designed on an iCMOS® process. iCMOS (industrial CMOS) is a modular manufacturing process that combines high voltage CMOS and bipolar technologies. It enables the development of a wide range of high performance analog ICs capable of 33 V operation in a footprint that no previous generation of high voltage parts has been able to achieve. Unlike analog ICs using conventional CMOS processes, iCMOS components can tolerate high supply voltages while providing increased performance, dramatically lower power consumption, and reduced package size.

The on-resistance profile is very flat over the full analog input range, ensuring excellent linearity and low distortion when switching audio signals.

iCMOS construction ensures ultralow power dissipation, making the parts ideally suited for portable and batterypowered instruments.

The ADG1404 switches one of four inputs to a common output, D, as determined by the 3-bit binary address lines, A0, A1, and EN. Logic 0 on the EN pin disables the device. Each switch conducts equally well in both directions when on and has an input signal range that extends to the supplies. In the off condition, signal levels up to the supplies are blocked. All switches exhibit break-before-make switching action. Inherent in the design is low charge injection for minimum transients when switching the digital inputs.

PRODUCT HIGHLIGHTS

1. 2.6 Ω maximum on resistance over temperature.

2. Minimum distortion.

3. Ultralow power dissipation: <0.03 μW.

4. 14-lead TSSOP and 16-lead, 4 mm × 4 mm LFCSP package.

Rev. 0

Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.

ADG1404

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REVISION HISTORY

7/08—Revision 0: Initial Version

Continuous Current, S or D .........................................................6

Absolute Maximum Ratings ............................................................7

ESD Caution...................................................................................7

Pin Configurations and Function Descriptions ............................8

Truth Table .....................................................................................8

Typical Performance Characteristics ..............................................9

Terminology .................................................................................... 12

Test Circuits ..................................................................................... 13

Outline Dimensions ....................................................................... 16

Ordering Guide .......................................................................... 16

Rev. 0 | Page 2 of 16

ADG1404

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SPECIFICATIONS

15 V DUAL SUPPLY

VDD = 15 V ± 10%, VSS = −15 V± 10%, GND = 0 V, unless otherwise noted.

Table 1.

Para meter 25°C −40°C to +85°C −40°C to +125°C Unit Test Con ditions/Com ments

ANALOG SWITCH

Analog Signal Range VDD to VSS V On Resistance (RON) 1.5 Ω typ VS = ±10 V, IS = −10 mA; see Figure 22

1.8 2.3 2.6 Ω max VDD = +13.5 V, VSS = −13.5 V On-Resistance Match

Between Channels (ΔR

0.18 0.19 0.21 Ω max On-Resistance Flatness (R

0.36 0.4 0.45 Ω max

LEAKAGE CURRENTS VDD = +16.5 V, VSS = −16.5 V

Source Off Leakage, IS (Off) ±0.03 nA typ

±0.55 ±2 ±12.5 nA max Drain Off Leakage, ID (Off) ±0.04 nA typ

±0.55 ±4 ±30 nA max Channel On Leakage, ID, IS (On) ±0.1 nA typ VS = VD = ±10 V; see Figure 24 ±2 ±4 ±30 nA max

DIGITAL INPUTS

Input High Voltage, V Input Low Voltage, V Input Current, I ±0.1 μA max Digital Input Capacitance, CIN 3.5 pF typ

DYNAMIC CHARACTERISTICS

Transition Time, t 180 220 250 ns max VS = +10 V; see Figure 29 tON (EN) 100 ns typ RL = 300 Ω, CL = 35 pF 120 145 165 ns max VS = +10 V; see Figure 31 t

(EN) 110 ns typ RL = 300 Ω, CL = 35 pF

OFF

135 165 185 ns max VS = +10 V; see Figure 31 Break-Before-Make Time Delay, t 10 ns min VS1 = VS2 = 10 V; see Figure 30 Charge Injection −20 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF; see Figure 32 Off Isolation 70 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz; see Figure 25 Channel-to-Channel Crosstalk 82 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz; see Figure 27 Total Harmonic Distortion + Noise 0.011 % ty p RL = 110 Ω, 10 V p-p, f = 20 Hz to 20 kHz; see

−3 dB Bandwidth 55 MHz typ RL = 50 Ω, CL = 5 pF; see Figure 26 Insertion Loss −0.17 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 26 CS (Off) 23 pF typ f = 1 MHz, VS = 0 V CD (Off) 90 pF typ f = 1 MHz, VS = 0 V CD, CS (On) 170 pF typ f = 1 MHz, VS = 0 V

POWER REQUIREMENTS VDD = +16.5 V, VSS = −16.5 V

IDD 0.001 μA typ Digital inputs = 0 V or VDD 1 μA max IDD 170 μA typ Digital inputs = 5 V 280 μA max ISS 0.001 μA typ Digital inputs = 0 V or VDD 1 μA max VDD/VSS ±4.5/±16.5 V min/max GND = 0 V

1

Guaranteed by design, not subject to production test.

or INH 0.005 μA typ VIN = V

INL

TRANSITION

)

ON

) 0.3 Ω typ VS = ±10 V, IS = −10 mA

FLAT(ON)

2.0 V min

INH

0.8 V max

INL

1

150 ns typ RL = 300 Ω, CL = 35 pF

0.1 Ω typ V

35 ns typ RL = 300 Ω, CL = 35 pF

BBM

= ±10 V, IS = −10 mA

S

V

= ±10 V, Vs = ∓10 V; see Figure 23

S

V

= ±10 V, Vs = ∓10 V; see Figure 23

S

or VDD

GND

Figure 28

Rev. 0 | Page 3 of 16

ADG1404

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12 V SINGLE SUPPLY

VDD = 12 V ± 10%, VSS = 0 V, GND = 0 V, unless otherwise noted.

Table 2.

Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 V to VDD V On Resistance (RON) 2.8 Ω typ VS = 0 V to 10 V, IS = −10 mA; see Figure 22

3.5 4.3 4.8 Ω max VDD = 10.8 V, VSS = 0 V On-Resistance Match

Between Channels (ΔR

)

ON

0.21 0.23 0.25 Ω max On-Resistance Flatness (R

FLAT(ON)

1.1 1.2 1.3 Ω max

LEAKAGE CURRENTS VDD = 13.2 V, VSS = 0 V

Source Off Leakage, IS (Off) ±0.02 nA typ VS = 1 V/10 V, VD = 10 V/1 V; see Figure 23 ±0.55 Drain Off Leakage, ID (Off) ±0.03 ±0.55 Channel On Leakage, ID, IS (On) ±0.1 ±1.5 DIGITAL INPUTS Input High Voltage, V Input Low Voltage, V Input Current, I

2.0 V min

INH

0.8 V max

INL

or I

0.001 μA typ VIN = V

INL

INH

±0.1 μA max Digital Input Capacitance, CIN 3.5 pF typ

DYNAMIC CHARACTERISTICS

Transition Time, t

TRANSITION

1

230 ns typ RL = 300 Ω, CL = 35 pF 300 375 430 ns max VS = 8 V; see Figure 29 tON (EN) 180 ns typ RL = 300 Ω, CL = 35 pF 240 295 335 ns max VS = 8 V; see Figure 31 t

(EN) 115 ns typ RL = 300 Ω, CL = 35 pF

OFF

160 190 220 ns max VS = 8 V; see Figure 31 Break-Before-Make Time Delay, t 10 ns min VS1 = VS2 = 8 V; see Figure 30 Charge Injection 30 pC typ VS = 6 V, RS = 0 Ω, CL = 1 nF; see Figure 32 Off Isolation 80 dB typ RL = 50 Ω, CL = 5 pF, f = 100kHz; see Figure 25 Channel-to-Channel Crosstalk 82 dB typ RL = 50 Ω, CL = 5 pF, f = 100kHz; see Figure 27

−3 dB Bandwidth 35 MHz typ RL = 50 Ω, CL = 5 pF; see Figure 26 Insertion Loss −0.3 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 26 CS (Off) 39 pF typ f = 1 MHz, VS = 6 V CD (Off) 150 pF typ f = 1 MHz, VS = 6 V CD, CS (On) 217 pF typ f = 1 MHz, VS = 6 V

POWER REQUIREMENTS VDD = 13.2 V

IDD 0.001 μA typ Digital inputs = 0 V or VDD 1 μA max IDD 170 μA typ Digital inputs = 5 V 260 μA max VDD 5/16.5 V min/max GND = 0 V, VSS = 0 V

1

Guaranteed by design, not subject to production test.

0.13 Ω typ V

= 0 V to 10 V, IS = −10 mA

S

) 0.6 Ω typ VS = 0V to 10 V, IS = −10 mA

±2 ±12.5

±4 ±30

nA max nA typ VS = 1 V/10 V, VD = 10 V/1 V; see Figure 23 nA max nA typ VS = VD = 1 V or 10 V; see Figure 24 nA max

or VDD

GND

100 ns typ RL = 300 Ω, CL = 35 pF

BBM

Rev. 0 | Page 4 of 16

ADG1404

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5 V DUAL SUPPLY

VDD = 5 V ± 10%, VSS = −5 V ± 10%, GND = 0 V, unless otherwise noted.

Table 3.

Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range

VDD to V

On Resistance (RON) 3.3 Ω typ 4 4.9 5.4 Ω max VDD = +4.5 V, VSS = −4.5 V On-Resistance Match

Between Channels (∆R

)

ON

0.13 Ω typ V

0.22 0.23 0.25 Ω max On-Resistance Flatness (R

) 0.9 Ω typ VS = ±4.5 V, IS = −10 mA

FLAT(ON)

1.1 1.24 1.31 Ω max

LEAKAGE CURRENTS VDD = +5.5 V, VSS = −5.5 V

Source Off Leakage, IS (Off) ±0.02 nA typ

±0.2 Drain Off Leakage, ID (Off) ±0.02

±0.25 Channel On Leakage, ID, IS (On) ±0.05 ±0.25

±1 ±12.5

±1.2 ±15

±1.5 ±20

DIGITAL INPUTS

Input High Voltage, V Input Low Voltage, V Input Current, I

2.0 V min

INH

0.8 V max

INL

or I

0.001 μA typ VIN = V

INL

INH

±0.1 μA max Digital Input Capacitance, CIN 3 5 pF typ

DYNAMIC CHARACTERISTICS1

Transition Time, t

340 ns typ RL = 300 Ω, CL = 35 pF

TRANSITION

470 560 615 ns max VS = 3 V; Figure 29 tON (EN) 260 ns typ RL = 300 Ω, CL = 35 pF 355 430 480 ns max t

(EN) 220 ns typ RL = 300 Ω, CL = 35 pF

OFF

315 365 400 ns max Break-Before-Make Time Delay, t

100 ns typ RL = 300 Ω, CL = 35 pF

BBM

50 ns min VS1 = VS2 = 3 V; see Figure 30 Charge Injection 30 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF; see Figure 32 Off Isolation 80 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz;

Channel-to-Channel Crosstalk 82 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz;

−3 dB Bandwidth 40 MHz typ RL = 50 Ω, CL = 5 pF; see Figure 26 Insertion Loss 0.27 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 26 Total Harmonic Distortion + Noise 0.03 % typ RL = 110 Ω, 2.5 V p-p, f = 20 Hz to 20 kHz;

CS (Off) 33 pF typ VS = 0 V, f = 1 MHz CD (Off) 128 pF typ VS = 0 V, f = 1 MHz CD, CS (On) 210 pF typ VS = 0 V, f = 1 MHz

POWER REQUIREMENTS VDD = 5.5 V, VSS = −5.5 V

IDD 0.001 μA typ Digital inputs = 0 V, 5 V, or VDD 1 μA max

ISS 0.001 μA typ Digital inputs = 0 V or VDD 1 μA max

VDD/VSS ±4.5/±16.5 V min/max GND = 0 V

1

Guaranteed by design, not subject to production test.

Rev. 0 | Page 5 of 16

SS

V

= ±4.5 V, IS = −10 mA; see Figure 22

S

= ±4.5 V, IS = −10 mA

S

= ±4.5 V, VD = ∓4.5 V; see Figure 23

V

S

nA max nA typ

= ±4.5 V, VD = ∓4.5 V; see Figure 23

V

S

nA max nA typ VS = VD = ±4.5 V; see Figure 24 nA max

or VDD

GND

V

= 3 V; Figure 31

S

V

= 3 V; Figure 31

S

see Figure 25

see Figure 27

see Figure 28

ANALOG DEVICES ADG1404 Service Manual

FEATURES

APPLICATIONS

FUNCTIONAL BLOCK DIAGRAM

GENERAL DESCRIPTION

PRODUCT HIGHLIGHTS

TABLE OF CONTENTS

REVISION HISTORY

SPECIFICATIONS

15 V DUAL SUPPLY

12 V SINGLE SUPPLY

5 V DUAL SUPPLY