0.1 Ω on-resistance match between channels
Up to 400 mA continuous current
Fully specified at +12 V, ±15 V, and ±5 V
No V
supply required
L
3 V logic-compatible inputs
Rail-to-rail operation
14-lead TSSOP and 4 mm × 4 mm, 16-lead LFCSP
APPLICATIONS
Automatic test equipment
Data acquisition systems
Battery-powered systems
Sample-and-hold systems
Audio signal routing
Communication systems
Relay replacement
±15 V/12 V/±5 V, 4:1, iCMOS Multiplexer
ADG1404
FUNCTIONAL BLOCK DIAGRAM
ADG1404
S1
S2
S3
S4
1 OF 4
DECODER
A0 A1 EN
Figure 1.
D
06816-001
GENERAL DESCRIPTION
The ADG1404 is a complementary metal-oxide semiconductor
(CMOS) analog multiplexer, comprising four single channels
designed on an iCMOS® process. iCMOS (industrial CMOS) is
a modular manufacturing process that combines high voltage
CMOS and bipolar technologies. It enables the development of
a wide range of high performance analog ICs capable of 33 V
operation in a footprint that no previous generation of high
voltage parts has been able to achieve. Unlike analog ICs using
conventional CMOS processes, iCMOS components can
tolerate high supply voltages while providing increased
performance, dramatically lower power consumption, and
reduced package size.
The on-resistance profile is very flat over the full analog input
range, ensuring excellent linearity and low distortion when
switching audio signals.
iCMOS construction ensures ultralow power dissipation,
making the parts ideally suited for portable and batterypowered instruments.
The ADG1404 switches one of four inputs to a common output,
D, as determined by the 3-bit binary address lines, A0, A1, and
EN. Logic 0 on the EN pin disables the device. Each switch
conducts equally well in both directions when on and has an
input signal range that extends to the supplies. In the off condition, signal levels up to the supplies are blocked. All switches
exhibit break-before-make switching action. Inherent in the
design is low charge injection for minimum transients when
switching the digital inputs.
PRODUCT HIGHLIGHTS
1. 2.6 Ω maximum on resistance over temperature.
2. Minimum distortion.
3. Ultralow power dissipation: <0.03 μW.
4. 14-lead TSSOP and 16-lead, 4 mm × 4 mm LFCSP package.
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
Para meter 25°C −40°C to +85°C −40°C to +125°C Unit Test Con ditions/Com ments
ANALOG SWITCH
Analog Signal Range VDD to VSS V
On Resistance (RON) 1.5 Ω typ VS = ±10 V, IS = −10 mA; see Figure 22
1.8 2.3 2.6 Ω max VDD = +13.5 V, VSS = −13.5 V
On-Resistance Match
Between Channels (ΔR
0.18 0.19 0.21 Ω max
On-Resistance Flatness (R
0.36 0.4 0.45 Ω max
LEAKAGE CURRENTS VDD = +16.5 V, VSS = −16.5 V
Source Off Leakage, IS (Off) ±0.03 nA typ
±0.55 ±2 ±12.5 nA max
Drain Off Leakage, ID (Off) ±0.04 nA typ
±0.55 ±4 ±30 nA max
Channel On Leakage, ID, IS (On) ±0.1 nA typ VS = VD = ±10 V; see Figure 24
±2 ±4 ±30 nA max
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
Input Current, I
±0.1 μA max
Digital Input Capacitance, CIN 3.5 pF typ
DYNAMIC CHARACTERISTICS
Transition Time, t
180 220 250 ns max VS = +10 V; see Figure 29
tON (EN) 100 ns typ RL = 300 Ω, CL = 35 pF
120 145 165 ns max VS = +10 V; see Figure 31
t
(EN) 110 ns typ RL = 300 Ω, CL = 35 pF
OFF
135 165 185 ns max VS = +10 V; see Figure 31
Break-Before-Make Time Delay, t
10 ns min VS1 = VS2 = 10 V; see Figure 30
Charge Injection −20 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF; see Figure 32
Off Isolation 70 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz; see Figure 25
Channel-to-Channel Crosstalk 82 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz; see Figure 27
Total Harmonic Distortion + Noise 0.011 % ty p RL = 110 Ω, 10 V p-p, f = 20 Hz to 20 kHz; see
−3 dB Bandwidth 55 MHz typ RL = 50 Ω, CL = 5 pF; see Figure 26
Insertion Loss −0.17 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 26
CS (Off) 23 pF typ f = 1 MHz, VS = 0 V
CD (Off) 90 pF typ f = 1 MHz, VS = 0 V
CD, CS (On) 170 pF typ f = 1 MHz, VS = 0 V
POWER REQUIREMENTS VDD = +16.5 V, VSS = −16.5 V
IDD 0.001 μA typ Digital inputs = 0 V or VDD
1 μA max
IDD 170 μA typ Digital inputs = 5 V
280 μA max
ISS 0.001 μA typ Digital inputs = 0 V or VDD
1 μA max
VDD/VSS ±4.5/±16.5 V min/max GND = 0 V
1
Guaranteed by design, not subject to production test.
Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to VDD V
On Resistance (RON) 2.8 Ω typ VS = 0 V to 10 V, IS = −10 mA; see Figure 22
3.5 4.3 4.8 Ω max VDD = 10.8 V, VSS = 0 V
On-Resistance Match
Between Channels (ΔR
)
ON
0.21 0.23 0.25 Ω max
On-Resistance Flatness (R
FLAT(ON)
1.1 1.2 1.3 Ω max
LEAKAGE CURRENTS VDD = 13.2 V, VSS = 0 V
Source Off Leakage, IS (Off) ±0.02 nA typ VS = 1 V/10 V, VD = 10 V/1 V; see Figure 23
±0.55
Drain Off Leakage, ID (Off) ±0.03
±0.55
Channel On Leakage, ID, IS (On) ±0.1
±1.5
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
Input Current, I
2.0 V min
INH
0.8 V max
INL
or I
0.001 μA typ VIN = V
INL
INH
±0.1 μA max
Digital Input Capacitance, CIN 3.5 pF typ
DYNAMIC CHARACTERISTICS
Transition Time, t
TRANSITION
1
230 ns typ RL = 300 Ω, CL = 35 pF
300 375 430 ns max VS = 8 V; see Figure 29
tON (EN) 180 ns typ RL = 300 Ω, CL = 35 pF
240 295 335 ns max VS = 8 V; see Figure 31
t
(EN) 115 ns typ RL = 300 Ω, CL = 35 pF
OFF
160 190 220 ns max VS = 8 V; see Figure 31
Break-Before-Make Time Delay, t
10 ns min VS1 = VS2 = 8 V; see Figure 30
Charge Injection 30 pC typ VS = 6 V, RS = 0 Ω, CL = 1 nF; see Figure 32
Off Isolation 80 dB typ RL = 50 Ω, CL = 5 pF, f = 100kHz; see Figure 25
Channel-to-Channel Crosstalk 82 dB typ RL = 50 Ω, CL = 5 pF, f = 100kHz; see Figure 27
−3 dB Bandwidth 35 MHz typ RL = 50 Ω, CL = 5 pF; see Figure 26
Insertion Loss −0.3 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 26
CS (Off) 39 pF typ f = 1 MHz, VS = 6 V
CD (Off) 150 pF typ f = 1 MHz, VS = 6 V
CD, CS (On) 217 pF typ f = 1 MHz, VS = 6 V
POWER REQUIREMENTS VDD = 13.2 V
IDD 0.001 μA typ Digital inputs = 0 V or VDD
1 μA max
IDD 170 μA typ Digital inputs = 5 V
260 μA max
VDD 5/16.5 V min/max GND = 0 V, VSS = 0 V
1
Guaranteed by design, not subject to production test.
0.13 Ω typ V
= 0 V to 10 V, IS = −10 mA
S
) 0.6 Ω typ VS = 0V to 10 V, IS = −10 mA
±2 ±12.5
±4 ±30
±4 ±30
nA max
nA typ VS = 1 V/10 V, VD = 10 V/1 V; see Figure 23
nA max
nA typ VS = VD = 1 V or 10 V; see Figure 24
nA max
or VDD
GND
100 ns typ RL = 300 Ω, CL = 35 pF
BBM
Rev. 0 | Page 4 of 16
ADG1404
www.BDTIC.com/ADI
5 V DUAL SUPPLY
VDD = 5 V ± 10%, VSS = −5 V ± 10%, GND = 0 V, unless otherwise noted.
Table 3.
Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range
VDD to V
On Resistance (RON) 3.3 Ω typ
4 4.9 5.4 Ω max VDD = +4.5 V, VSS = −4.5 V
On-Resistance Match
Between Channels (∆R
)
ON
0.13 Ω typ V
0.22 0.23 0.25 Ω max
On-Resistance Flatness (R
) 0.9 Ω typ VS = ±4.5 V, IS = −10 mA
FLAT(ON)
1.1 1.24 1.31 Ω max
LEAKAGE CURRENTS VDD = +5.5 V, VSS = −5.5 V
Source Off Leakage, IS (Off) ±0.02 nA typ
±0.2
Drain Off Leakage, ID (Off) ±0.02
±0.25
Channel On Leakage, ID, IS (On) ±0.05
±0.25
±1 ±12.5
±1.2 ±15
±1.5 ±20
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
Input Current, I
2.0 V min
INH
0.8 V max
INL
or I
0.001 μA typ VIN = V
INL
INH
±0.1 μA max
Digital Input Capacitance, CIN 3 5 pF typ
DYNAMIC CHARACTERISTICS1
Transition Time, t
340 ns typ RL = 300 Ω, CL = 35 pF
TRANSITION
470 560 615 ns max VS = 3 V; Figure 29
tON (EN) 260 ns typ RL = 300 Ω, CL = 35 pF
355 430 480 ns max
t
(EN) 220 ns typ RL = 300 Ω, CL = 35 pF
OFF
315 365 400 ns max
Break-Before-Make Time Delay, t
100 ns typ RL = 300 Ω, CL = 35 pF
BBM
50 ns min VS1 = VS2 = 3 V; see Figure 30
Charge Injection 30 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF; see Figure 32
Off Isolation 80 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz;
Channel-to-Channel Crosstalk 82 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz;
−3 dB Bandwidth 40 MHz typ RL = 50 Ω, CL = 5 pF; see Figure 26
Insertion Loss 0.27 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 26
Total Harmonic Distortion + Noise 0.03 % typ RL = 110 Ω, 2.5 V p-p, f = 20 Hz to 20 kHz;
CS (Off) 33 pF typ VS = 0 V, f = 1 MHz
CD (Off) 128 pF typ VS = 0 V, f = 1 MHz
CD, CS (On) 210 pF typ VS = 0 V, f = 1 MHz
POWER REQUIREMENTS VDD = 5.5 V, VSS = −5.5 V
IDD 0.001 μA typ Digital inputs = 0 V, 5 V, or VDD
1 μA max
ISS 0.001 μA typ Digital inputs = 0 V or VDD
1 μA max
VDD/VSS ±4.5/±16.5 V min/max GND = 0 V
1
Guaranteed by design, not subject to production test.
Rev. 0 | Page 5 of 16
SS
V
V
= ±4.5 V, IS = −10 mA; see Figure 22
S
= ±4.5 V, IS = −10 mA
S
= ±4.5 V, VD = ∓4.5 V; see Figure 23
V
S
nA max
nA typ
= ±4.5 V, VD = ∓4.5 V; see Figure 23
V
S
nA max
nA typ VS = VD = ±4.5 V; see Figure 24
nA max
or VDD
GND
V
= 3 V; Figure 31
S
V
= 3 V; Figure 31
S
see Figure 25
see Figure 27
see Figure 28
ADG1404
www.BDTIC.com/ADI
CONTINUOUS CURRENT, S OR D
Table 4.
Parameter 25°C 85°C 125°C Unit Test Conditions/Comments
CONTINUOUS CURRENT, S or D
15 V Dual Supply VDD = +13.5 V, VSS = −13.5 V
ADG1404 TSSOP 350 220 100 mA max
ADG1404 LFCSP 450 300 140 mA max
12 V Single Supply VDD = 10.8 V, VSS = 0 V
ADG1404 TSSOP 300 220 100 mA max
ADG1404 LFCSP 400 300 140 mA max
5 V Dual Supply VDD = +4.5 V, VSS = −4.5 V
ADG1404 TSSOP 300 220 100 mA max
ADG1404 LFCSP 400 300 140 mA max
1
Guaranteed by design, not subject to production test.
1
Rev. 0 | Page 6 of 16
ADG1404
www.BDTIC.com/ADI
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 5.
Parameter Rating
VDD to VSS 35 V
VDD to GND −0.3 V to +25 V
VSS to GND +0.3 V to −25 V
Analog Inputs
Digital Inputs
Peak Current, S or D
Continuous Current, S or D
Operating Temperature Range
Automotive (Y Version) −40°C to +125°C
Storage Temperature Range −65°C to +150°C
Junction Temperature 150°C
14-Lead TSSOP, θJA Thermal
Overvoltages at IN, S, and D are clamped by internal diodes. Current should
be limited to the maximum ratings given.
2
See data given in Table 4.
1
2
VSS − 0.3 V to VDD + 0.3 V or 30
mA, whichever occurs first
GND − 0.3 V to V
30 mA, whichever occurs first
600 mA (pulsed at 1 ms,
10% duty cycle maximum)
Data + 15%
112°C/W
30.4°C/W
260(+0/−5)°C
+ 0.3 V or
DD
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
Only one absolute maximum rating may be applied at any
one time.
ESD CAUTION
Rev. 0 | Page 7 of 16
ADG1404
www.BDTIC.com/ADI
PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS
0
A
EN
A1
NC
14
13
15
16
1
A0
2
EN
3
V
ADG1404
SS
TOP VIEW
4
S1
(Not to Scale)
5
S2
6
D
7
NC
NC = NO CONNECT
Figure 2. TSSOP Pin Configuration
Table 6. Pin Function Descriptions
Pin No.
TSSOP LFCSP Mnemonic Description
1 15 A0 Logic Control Input.
2 16 EN
3 1 VSS Most Negative Power Supply Potential.
4 3 S1 Source Terminal. Can be an input or an output.
5 4 S2 Source Terminal. Can be an input or an output.
6 6 D Drain Terminal. Can be an input or an output.
7 to 9 2, 5, 7, 8, 13 NC No Connection.
10 9 S4 Source Terminal. Can be an input or an output.
11 10 S3 Source Terminal. Can be an input or an output.
12 11 VDD Most Positive Power Supply Potential.
13 12 GND Ground (0 V) Reference.
14 14 A1 Logic Control Input.
14
A1
13
GND
12
V
DD
11
S3
10
S4
9
NC
8
NC
06816-002
SS
NOTES
1. EXPOSE D PAD TIED TO SUBSTRATE, V
2. NC = NO CONNECT .
1V
2NC
3S1
4S2
PIN 1
INDICATO R
ADG1404
TOP VIEW
(Not to Scale)
7
5
6
D
NC
NC
12 GND
11 V
DD
10 S3
9S4
8
NC
SS
Figure 3. LFCSP Pin Configuration
Active High Digital Input. When this pin is low, the device is disabled and all switches are off.
When this pin is high, the Ax logic inputs determine the on switches.
.
06816-003
TRUTH TABLE
Table 7.
EN A1 A0 S1 S2 S3 S4
0 X X Off Off Off Off
1 0 0 On Off Off Off
1 0 1 Off On Off Off
1 1 0 Off Off On Off
1 1 1 Off Off Off On
Rev. 0 | Page 8 of 16
ADG1404
www.BDTIC.com/ADI
TYPICAL PERFORMANCE CHARACTERISTICS
2.5
2.0
1.5
1.0
ON RESISTANCE (Ω)
0.5
T
= 25°C
A
I
= –10mA
S
0
–16.5 –12.5 –8. 5 –4.5–0.53.57.515.5
V
DD
V
SS
V
= +10V,
DD
V
= –10V
SS
= +13.5V,
= –13.5V
V
= +12V,
DD
V
= –12V
SS
V
DD
V
SS
VS OR VD (V)
= +15V,
= –15V
VDD = +16.5V,
V
= –16.5V
SS
11.5
Figure 4. On Resistance as a Function of VD (VS), Dual Supply
06816-004
3.0
2.5
2.0
1.5
1.0
ON RESISTANCE (Ω)
0.5
VDD = +15V
V
= –15V
SS
I
= –10mA
S
0
–15151050–5–10
TA = +125°C
= +85°C
T
A
TA = +25°C
T
= –40°C
A
VS OR VD (V)
06816-007
Figure 7. On Resistance as a Function of VD (VS) for Different Temperatures,
15 V Dual Supply
4.0
3.5
3.0
2.5
2.0
1.5
ON RESISTANCE ( Ω)
1.0
0.5
TA = 25°C
I
= –10mA
S
0
–7 –6 –5–3–1–4–20 16
V
V
= +4.5V,
DD
= –4.5V
SS
V
= +5V,
DD
V
= –5V
SS
V
DD
V
SS
VS OR VD (V)
= +5.5V,
= –5.5V
34752
VDD = +7V,
V
SS
Figure 5. On Resistance as a Function of VD (VS), Dual Supply
7
6
5
4
3
ON RESISTANCE ( Ω)
2
1
TA = 25°C
I
= –10mA
S
0
01412108642
V
= 5V,
DD
V
= 0V
SS
= 10.8V,
V
= 8V,
V
DD
V
= 0V
SS
DD
V
SS
V
DD
V
SS
VS OR VD (V)
= 0V
= 13.2V,
= 0V
V
= 12V,
DD
V
= 0V
SS
VDD = 15V,
V
= 0V
SS
Figure 6. On Resistance as a Function of VD (VS), Single Supply
= –7V
5.0
4.5
4.0
3.5
3.0
2.5
2.0
ON RESISTANCE ( Ω)
1.5
1.0
VDD = +5V
0.5
V
= –5V
SS
I
= –10mA
S
0
–5–4–3–2–1012345
06816-005
= +125°C
T
A
T
= +85°C
A
TA = +25°C
= –40°C
T
A
VS OR VD (V)
06815-108
Figure 8. On Resistance as a Function of VD (VS) for Different Temperatures,
5 V Dual Supply
4.5
4.0
= +125°C
3.5
3.0
2.5
2.0
1.5
ON RESISTANCE ( Ω)
1.0
VDD = 12V
0.5
V
= 0V
SS
I
= –10mA
S
0
01108642
06816-006
T
A
T
= +85°C
A
TA = +25°C
= –40°C
T
A
VS OR VD (V)
2
06815-109
Figure 9. On Resistance as a Function of VD (VS) for Different Temperatures,
Single Supply
Rev. 0 | Page 9 of 16
ADG1404
www.BDTIC.com/ADI
6
4
2
0
–2
–4
–6
LEAKAGE (nA)
–8
–10
–12
–14
IS (OFF) + –
ID (OFF) + –
IS (OFF) – +
ID (OFF) – +
ID, IS (ON) + +
ID, IS (ON) – –
VDD = +15V
V
= –15V
SS
V
= +10V/–10V
BIAS
0 20406080100120
TEMPERATURE (°C)
06816-111
Figure 10. Leakage Currents as a Function of Temperature,15 V Dual Supply
80
70
60
50
40
(µA)
DD
I
30
20
10
0
0112108642
V
= +12V
DD
V
= 0V
SS
V
= +5V
DD
V
= –5V
SS
LOGIC, Ax (V)
TA = 25°C
I
PER LOGI C INPUT
DD
VDD = +15V
V
= –15V
SS
4
06815-008
Figure 13. IDD vs. Logic Level
4
IS (OFF) + –
ID (OFF) + –
3
IS (OFF) – +
ID (OFF) – +
2
ID, IS (ON) + +
ID, IS (ON) – –
1
0
–1
LEAKAGE (nA)
–2
VDD = +5V
–3
V
= –5V
SS
V
= +4.5V/–4. 5V
BIAS
–4
0 20406080100120
TEMPERATURE (°C)
06816-112
Figure 11. Leakage Currents as a Function of Temperature, 5 V Dual Supply
14
12
10
LEAKAGE (nA)
–2
–4
IS (OFF) + –
ID (OFF) + –
IS (OFF) – +
ID (OFF) – +
ID, IS (ON) + +
ID, IS (ON) – –
8
6
4
2
0
VDD = 12V
V
= 0V
SS
V
= 1V/10V
BIAS
0 20406080100120
TEMPERATURE (°C)
06816-113
Figu re 12. Leakage Currents as a Function of Temperature, 12 V Single Supply
The ohmic resistance between Terminal D and Terminal S.
R
FLAT(ON)
Flatness that is defined as the difference between the maximum
and minimum value of on resistance measured over the
specified analog signal range.
I
(Off)
S
The source leakage current with the switch off.
I
(Off)
D
The drain leakage current with the switch off.
I
, IS (On)
D
The channel leakage current with the switch on.
V
INL
The maximum input voltage for Logic 0.
V
INH
The minimum input voltage for Logic 1.
I
(I
)
INL
INH
The input current of the digital input.
C
(Off)
S
The off switch source capacitance, which is measured with
reference to ground.
C
(Off)
D
The off switch drain capacitance, which is measured with
reference to ground.
C
, CS (On)
D
The on switch capacitance, which is measured with reference to
ground.
C
IN
The digital input capacitance.
t
TRANSITION
The delay time between the 50% and 90% points of the digital
input and switch on condition when switching from one
address state to another.
t
(EN)
ON
The delay between applying the digital control input and the
output switching on. See Figure 29, Test Circuit 4.
t
(EN)
OFF
The delay between applying the digital control input and the
output switching off.
Charge Injection
A measure of the glitch impulse transferred from the digital
input to the analog output during switching.
Off Isolation
A measure of unwanted signal coupling through an off switch.
Crosstalk
A measure of unwanted signal that is coupled through from one
channel to another as a result of parasitic capacitance.
Bandwidth
The frequency at which the output is attenuated by 3 dB.
On Response
The frequency response of the on switch.
Insertion Loss
The loss due to the on resistance of the switch.
THD + N
The ratio of the harmonic amplitude plus noise of the signal to
the fundamental.
ACPSRR (AC Power Supply Rejection Ratio)
The ratio of the amplitude of signal on the output to the
amplitude of the modulation. This is a measure of the part’s
ability to avoid coupling noise and spurious signals that appear
on the supply voltage pin to the output of the switch. The dc voltage
on the device is modulated by a sine wave of 0.62 V p-p.
Rev. 0 | Page 12 of 16
ADG1404
www.BDTIC.com/ADI
TEST CIRCUITS
V
V
DD
SS
0.1µF
50Ω
D
OFF ISOLATION = 20 log
Figure 25. Off Isolation
V
SS
0.1µF
D
NETWORK
ANALYZER
50Ω
V
S
V
OUT
R
L
50Ω
V
OUT
V
S
NETWORK
ANALYZER
50Ω
V
OUT
R
L
50Ω
V
S
06816-027
V
SxD
V
S
Figure 22. On Resistance
IS (OFF)ID (OFF)
SxD
AA
0.1µF
V
DDVSS
Sx
GND
I
DS
06816-020
V
DD
0.1µF
V
DDVSS
Sx
GND
ID (ON)
A
V
D
V
D
06816-021
INSERTION LOSS = 20 log
WITH SWITCH
V
OUT
V
WITHOUT SWITCH
OUT
06816-028
Figure 26. Bandwidth
V
V
DD
0.1µF
NETWO RK
ANALYZER
V
OUT
R
L
50Ω
V
S
CHANNEL-TO-CHANNEL CROSSTALK = 20 log
06816-022
V
DD
S1
S2
GND
V
OUT
V
SS
0.1µF
V
SS
D
R
L
50Ω
S
06816-029
Figure 27. Channel-to-Channel Crosstalk
V
S
NC
Figure 23. Off Leakage
SxD
NC = NO CONNECT
Figure 24. On Leakage
Rev. 0 | Page 13 of 16
ADG1404
www.BDTIC.com/ADI
V
0.1µF
IN
V
IN
V
DD
V
SS
0.1µF
R
L
110Ω
AUDIO PRECISIO N
R
S
V
S
V p-p
V
OUT
06816-030
V
DD
SS
Sx
D
GND
Figure 28. THD + Noise
V
V
SS
DD
0.1µF
A1
V
IN
2.4V
A0
EN
0.1µF
V
V
SS
DD
GND
S1
S2
S3
S4
D
R
L
300Ω
V
S1
V
S4
C
35pF
ADDRESS
DRIVE (V
V
OUT
L
3V
)
)
IN
0V
V
OUT
50%50%
90%
t
TRANSITI ON
t
TRANSITION
90%
06816-023
Figure 29. Address to Output Switching Times
V
V
SS
DD
0.1µF
0.1µF
V
V
SS
DD
GND
S1
S2
S3
S4
D
R
300Ω
A1
V
IN
300Ω
2.4V
A0
EN
V
S1
V
OUT
C
L
L
35pF
ADDRESS
DRIVE (V
3V
)
IN
0V
V
OUT
80%
t
BBM
80%
06816-024
Figure 30. Break-Before-Make Time Delay
Rev. 0 | Page 14 of 16
ADG1404
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0.1µF
V
IN
300Ω
A1
A0
EN
V
V
DD
SS
0.1µF
3V
V
V
SS
DD
GND
S1
S2
S3
S4
D
R
L
300Ω
V
S
C
L
35pF
ENABLE
OUTPUT
)
IN
0V
V
OUT
0V
DRIVE (V
V
OUT
50%50%
0.9V
OUT
t
(EN)
ON
t
OFF
0.9V
(EN)
OUT
06816-025
Figure 31. Enable-to-Output Switching Delay
V
V
V
R
S
V
S
GND
DD
DD
SxD
DECODER
A2A1
SS
V
SS
V
OUT
C
L
1nF
EN
V
OUT
V
Q
= CL × ΔV
INJ
IN
SW OFF
SW ON
SW OFF
V
IN
OUT
ΔV
OUT
SW OFF
SW OFF
06816-026
Figure 32. Charge Injection
Rev. 0 | Page 15 of 16
ADG1404
C
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OUTLINE DIMENSIONS
5.10
5.00
4.90
1.05
1.00
0.80
4.50
4.40
4.30
PIN 1
14
0.65
BSC
0.15
0.05
COMPLIANT TO JEDEC STANDARDS MO-153-AB-1
0.30
0.19
8
6.40
BSC
71
1.20
MAX
SEATING
PLANE
0.20
0.09
COPLANARITY
0.10
8°
0°
0.75
0.60
0.45
Figure 33. 14-Lead Thin Shrink Small Outline Package [TSSOP]
(RU-14)
Dimension shown in millimeters
0.50
0.40
INDI
SEATING
PLANE
PIN 1
ATO R
1.00
0.85
0.80
12° MAX
4.00
BSC SQ
3.75
BSC SQ
TOP VIEW
0.80 MAX
0.65 TYP
0.05 MAX
0.30
0.23
0.18
COMPLIANTTOJEDEC STANDARDS MO-220-VGGC.
0.02 NOM
0.20 REF
0.60 MAX
12
0.65
9
BSC
1.95 BCS
COPLANARITY
0.08
13
EXPOSED
8
BOTTOM VIEW
PAD
0.30
1
16
4
5
N
P
I
D
N
I
2.65
2.50 SQ
2.35
0.25 MIN
1
R
O
C
I
A
T
031006-A
Figure 34. 16-Lead Lead Frame Chip Scale Package [LFCSP_VQ]
4 mm × 4 mm Body, Very Thin Quad
(CP-16-13)
Dimensions shown in millimeters
ORDERING GUIDE
Model Temperature Range Package Description Package Option