33 V supply range
Fully specified at +12 V, ±15 V
130 Ω on resistance
supply required
No V
L
3 V logic-compatible inputs
Rail-to-rail operation
16-lead TSSOP and 16-lead SOIC
Typical power consumption: <0.03 μW
APPLICATIONS
Signal switching
Battery-powered systems
Communication systems
Audio/video signal routing
IN1
IN2
ADG1311
IN3
IN4
S1
IN1
D1
S2
IN2
D2
S3
D3
S4
D4
SWITCHES SHOWN FOR A LOGIC 1 INPUT
ADG1312
IN3
IN4
Figure 1.
S1
IN1
D1
S2
IN2
D2
S3
IN3
D3
S4
IN4
D4
ADG1313
GENERAL DESCRIPTION PRODUCT HIGHLIGHTS
The ADG1311/ADG1312/ADG1313 are monolithic CMOS
vices containing four independently selectable switches
de
designed on a CMOS process.
1. 3 V logic-compatible digital inputs: V
logic power supply required.
V
2. No
3. 16-lead TSSO
L
P and SOIC packages.
= 2.0 V, VIL = 0.8 V.
IH
S1
D1
S2
D2
S3
D3
S4
D4
05676-001
The ADG1311/ADG1312/ADG1313 contain four independent
s
ingle-pole/single-throw (SPST) switches. The ADG1311 and
ADG1312 differ only in that the digital control logic is inverted.
The ADG1311 switches are turned on with Logic 0 on the appropriate control input, while Logic 1 is required for the ADG1312.
The ADG1313 has two switches with digital control logic similar
to the ADG1311; the logic is inverted on the other two switches.
The ADG1313 exhibits break-before-make switching action for
use in multiplexer applications.
Each switch conducts equally well in both
directions when on
and has an input signal range that extends to the supplies. In the
off condition, signal levels up to the supplies are blocked.
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Anal og Devices for its use, nor for any infringements of patents or ot her
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
Y Version
Parameter 25°C −40°C to +105°C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range VDD to VSS V
On Resistance (RON) 130 230 Ω typ VS = ±10 V, IS = −1 mA; Figure 10
200 Ω max VDD = +13.5 V, VSS = −13.5 V
On Resistance Match Between
Channels (∆R
)
ON
5 Ω typ V
10 Ω max
On Resistance Flatness (R
) 25 Ω typ VS = −5 V/0 V/+5 V; IS = −1 mA
FLAT(ON)
65 Ω max
LEAKAGE CURRENTS VDD = +16.5 V, VSS = −16.5 V
Source Off Leakage, IS (Off) ±10 nA typ
Drain Off Leakage, ID (Off) ±10 nA typ
Channel On Leakage, ID, IS (On) ±10 nA typ VS = VD = ±10 V; Figure 12
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
Input Current, I
INL
2.0 V min
INH
0.8 V max
INL
or I
0.005 μA typ VIN = V
INH
±0.1 μA max
Digital Input Capacitance, CIN 2.5 pF typ
DYNAMIC CHARACTERISTICS2
tON 105 ns typ RL = 300 Ω, CL = 35 pF
125 180 ns max VS = +10 V; Figure 13
t
40 ns typ RL = 300 Ω, CL = 35 pF
OFF
50 60 ns max VS = +10 V; Figure 13
Break-Before-Make Time Delay, tD 25 ns typ RL = 300 Ω, CL = 35 pF
(ADG1313 Only) 10 ns min VS1 = VS2 = 10 V; Figure 14
Charge Injection 2 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF; Figure 15
Off Isolation 80 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; Figure 16
Channel-to-Channel Crosstalk 90 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; Figure 17
−3 dB Bandwidth 600 MHz typ RL = 50 Ω, CL = 5 pF; Figure 18
CS (Off) 5 pF typ
CD (Off) 5 pF typ
CD, CS (On) 10 pF typ
POWER REQUIREMENTS VDD = +16.5 V, VSS = −16.5 V
IDD 0.001 μA typ Digital inputs = 0 V or VDD
1.0 μA max
IDD 220 μA typ Digital inputs = 5 V
320 μA max
ISS 0.001 μA typ Digital inputs = 0 V or VDD
1.0 μA max
ISS 0.001 μA typ Digital inputs = 5 V
1.0 μA max
1
Temperature range for Y Version is −40°C to +105°C.
2
Guaranteed by design, not subject to production test.
Y Version
Parameter 25°C −40°C to +105°C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to VDD V
On Resistance (RON) 325 520 Ω typ VS = 0 V − 10 V, IS = −1 mA; Figure 10
500 Ω max VDD = 10.8 V, VSS = 0 V
On Resistance Match Between
Channels (∆R
)
ON
10 Ω typ V
15 Ω max
On Resistance Flatness (R
) 65 Ω typ VS = +3 V/+6 V/+9 V, IS = −1 mA
FLAT(ON)
LEAKAGE CURRENTS VDD = 13.2 V, VSS = 0 V
Source Off Leakage, IS (Off) ±10 nA typ VS = +1 V/+10 V, VD = +10 V/+1 V; Figure 11
Drain Off Leakage, ID (Off) ±10 nA typ VS = +1 V/+10 V, VD = +10 V/+1 V Figure 11
Channel On Leakage, ID, IS (On) ±10 nA typ VS = VD = +1 V or +10 V; Figure 12
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
Input Current, I
INL
2.0 V min
INH
0.8 V max
INL
or I
0.001 μA typ VIN = V
INH
±0.1 μA max
Digital Input Capacitance, CIN 3 pF typ
DYNAMIC CHARACTERISTICS2
tON 120 ns typ RL = 300 Ω, CL = 35 pF
155 210 ns max VS = 8 V; Figure 13
t
45 ns typ RL = 300 Ω, CL = 35 pF
OFF
65 80 ns max VS = 8 V; Figure 13
Break-Before-Make Time Delay, tD 50 ns typ RL = 300 Ω, CL = 35 pF
(ADG1313 Only) 10 ns min VS1 = VS2 = 8 V; Figure 14
Charge Injection 2 pC typ VS = 6 V, RS = 0 Ω, CL = 1 nF; Figure 15
Off Isolation 80 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; Figure 16
Channel-to-Channel Crosstalk 90 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; Figure 17
−3 dB Bandwidth 500 MHz typ RL = 50 Ω, CL = 5 pF; Figure 18
CS (Off) 5 pF typ
CD (Off) 5 pF typ
CD, CS (On) 10 pF typ
POWER REQUIREMENTS VDD = 13.2 V
IDD 0.001 μA typ Digital inputs = 0 V or VDD
1.0 μA max
IDD 220 μA typ Digital inputs = 5 V
320 μA max
1
Temperature range for Y Version is −40°C to +105°C.
2
Guaranteed by design, not subject to production test.
1
= 0 V − 10 V, IS = −1 mA
S
or V
INL
INH
Rev. 0 | Page 4 of 12
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