ANALOG DEVICES ADG1236 Service Manual

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Low Capacitance, Low Charge Injection,

FEATURES

1.3 pF off capacitance

3.5 pF on capacitance 1 pC charge injection 33 V supply range 120 Ω on resistance Fully specified at +12 V, ±15 V

supply required

No V

3 V logic-compatible inputs Rail-to-rail operation 16-lead TSSOP and 12-lead LFCSP packages Typical power consumption: <0.03 μW

APPLICATIONS

Automatic test equipment Data acquisition systems Battery-powered systems Sample-and-hold systems Audio/video signal routing Communication systems

GENERAL DESCRIPTION

±15 V/12 V iCMOS™, Dual SPDT Switch

ADG1236

FUNCTIONAL BLOCK DIAGRAM

S1A

S1B

IN1

IN2

S2A

S2B

SWITCHES SHOWN FOR A LOGIC 1 INPUT

ADG1236

Figure 1.

04776-001

The ADG1236 is a monolithic CMOS device containing two independently selectable SPDT switches. It is designed on an iCMOS process. iCMOS (industrial CMOS) is a modular manufacturing process combining high voltage complementary metal-oxide semiconductor (CMOS) and bipolar technologies. It enables the development of a wide range of high performance analog ICs capable of 33 V operation in a footprint that no previous generation of high voltage parts has been able to achieve. Unlike analog ICs using conventional CMOS processes, iCMOS components can tolerate high supply voltages while providing increased performance, dramatically lower power consumption, and reduced package size.

The ultralow capacitance and charge injection of the part make it an ideal solution for data acquisition and sample-and-hold applications, where low glitch and fast settling are required. Fast switching speed coupled with high signal bandwidth makes the part suitable for video signal switching. iCMOS construction ensures ultralow power dissipation, making the part ideally suited for portable and battery-powered instruments.

Each switch conducts equally well in both directions when on and has an input signal range that extends to the supplies. In the off condition, signal levels up to the supplies are blocked. Both switches exhibit break-before-make switching action for use in multiplexer applications.

PRODUCT HIGHLIGHTS

1. 1.3 pF off capacitance (±15 V supply).

2. 1 pC charge injection.

3. 3 V logic-compatible digital inputs: V

4. No V

logic power supply required.

5. Ultralow power dissipation: <0.03 μW.

6. 16-lead TSSOP and 12-lead 3 mm × 3 mm LFCSP packages.

= 2.0 V, VIL = 0.8 V.

Rev. 0

Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Anal og Devices for its use, nor for any infringements of patents or ot her rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.

ADG1236

TABLE OF CONTENTS

Features.............................................................................................. 1

Absolute Maximum Ratings ............................................................6

Applications....................................................................................... 1

Functional Block Diagram .............................................................. 1

General Description ......................................................................... 1

Product Highlights ........................................................................... 1

Revision History ............................................................................... 2

Specifications..................................................................................... 3

Dual Supply................................................................................... 3

Single Supply................................................................................. 5

REVISION HISTORY

9/05—Revision 0: Initial Version

Truth Table for Switches...............................................................6

ESD Caution...................................................................................6

Pin Configurations and Function Descriptions............................7

Terminology.......................................................................................8

Typical Performance Characteristics..............................................9

Test Circuits..................................................................................... 12

Outline Dimensions....................................................................... 14

Ordering Guide .......................................................................... 14

Rev. 0 | Page 2 of 16

ADG1236

SPECIFICATIONS

DUAL SUPPLY

VDD = 15 V ± 10%, VSS = −15 V ± 10%, GND = 0 V, unless otherwise noted.

Table 1.

Y Version1

−40°C to

Parameters 25°C

+85°C

ANALOG SWITCH

Analog Signal Range VDD to VSS V On Resistance (RON) 120 Ω typ VS = ±10 V, IS = −1 mA; Figure 20 190 230 260 Ω max VDD = +13.5 V, VSS = −13.5 V On Resistance Match Between

Channels (∆R

)

3.5 Ω typ VS = ±10 V, IS = −1 mA

6 10 12 Ω max On Resistance Flatness (R

) 20 Ω typ VS = −5 V, 0 V, +5 V; IS = −1 mA

FLAT(ON)

57 72 79 Ω max

LEAKAGE CURRENTS VDD = +16.5 V, VSS = −16.5 V

Source Off Leakage, IS (Off) ±0.02 nA typ

±0.1 ±0.6 ±1 nA max Drain Off Leakage, ID (Off) ±0.02 nA typ

±0.1 ±0.6 ±1 nA max Channel On Leakage, ID, IS (On) ±0.02 nA typ VS = VD = ±10 V; Figure 22 ±0.2 ±0.6 ±1 nA max

DIGITAL INPUTS

Input High Voltage, V Input Low Voltage, V Input Current, I

INL

2.0 V min

INH

0.8 V max

INL

or I

0.005 μA typ VIN = V

INH

±0.1 μA max Digital Input Capacitance, CIN 2 pF typ

DYNAMIC CHARACTERISTICS2

Transition Time, t

TRANS AOFF BON

125 ns typ RL = 300 Ω, CL = 35 pF 150 200 ns max VS = 10 V; Figure 23 Transition Time, t

TRANS BOFF AON

70 ns typ RL = 300 Ω, CL = 35 pF 90 115 ns max VS = 10 V; Figure 23 Break-Before-Make Time Delay, tD 25 ns typ RL = 300 Ω, CL = 35 pF 10 ns min VS1 = VS2 = 10 V; Figure 24 Charge Injection −1 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF; Figure 25 Off Isolation 80 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; Figure 26 Channel-to-Channel Crosstalk 85 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; Figure 27 Total Harmonic Distortion + Noise 0.15 % typ RL = 10 kΩ, 5 V rms, f = 20 Hz to 20 kHz

−3 dB Bandwidth 1000 MHz typ RL = 50 Ω, CL = 5 pF; Figure 28 CS (Off) 1.3 pF typ f = 1 MHz; VS = 0 V

1.6 pF max f = 1 MHz; VS = 0 V CD, CS (On) 3.5 pF typ f = 1 MHz; VS = 0 V

4.3 pF max f = 1 MHz; VS = 0 V

−40°C to +125°C

Unit Test Conditions/Comments1

VS = ±10 V, VS = ∓10 V; Figure 21

or V

INH

INL

Rev. 0 | Page 3 of 16

ADG1236

Y Version1

−40°C to

Parameters 25°C

+85°C

POWER REQUIREMENTS VDD = +16.5 V, VSS = −16.5 V

IDD 0.001 μA typ Digital inputs = 0 V or VDD

1.0 μA max IDD 170 μA typ Digital inputs = 5 V 230 μA max ISS 0.001 μA typ Digital inputs = 0 V or VDD

1.0 μA max ISS 0.001 μA typ Digital inputs = 5 V

1.0 μA max

Temperature range for Y version is −40°C to +125°C.

Guaranteed by design; not subject to production test.

−40°C to +125°C

Unit Test Conditions/Comments1

Rev. 0 | Page 4 of 16

ADG1236

SINGLE SUPPLY

VDD = 12 V ± 10%, VSS = 0 V, GND = 0 V, unless otherwise noted.

Table 2.

Y Version1

−40°C to

Parameters 25°C

ANALOG SWITCH

+85°C

Analog Signal Range 0 V to VDD V On Resistance (RON) 300 Ω typ VS = 0 V to 10 V, IS = −1 mA; Figure 20

On Resistance Match Between

Channels (∆R

)

475 567 625 Ω max V

4.5 Ω typ V

16 26 27 Ω max

On Resistance Flatness (R

) 60 Ω typ VS = 3 V, 6 V, 9 V, IS = −1 mA

FLAT(ON)

LEAKAGE CURRENTS

Source Off Leakage, IS (Off) ±0.02 nA typ VS = 1 V/10 V, VD = 10 V/1 V; Figure 21

±0.1 ±0.6 ±1 nA max

Drain Off Leakage, ID (Off) ±0.02 nA typ VS = 1 V/10 V, VD = 10 V/1 V; Figure 21

±0.1 ±0.6 ±1 nA max

Channel On Leakage, ID, IS (On) ±0.02 nA typ VS = VD = 1 V or 10 V, Figure 22

±0.2 ±0.6 ±1 nA max

DIGITAL INPUTS

Input High Voltage, V Input Low Voltage, V Input Current, I

INL

Digital Input Capacitance, CIN 3

DYNAMIC CHARACTERISTICS2

Transition Time, t

2.0 V min

INH

0.8 V max

INL

or I

0.001 μA typ VIN = V

INH

±0.1 μA max

TRANS BOFF AON

105 ns typ RL = 300 Ω, CL = 35 pF 140 175 ns max VS = 8 V; Figure 23 Transition Time, t

TRANS AOFF BON

155 ns typ RL = 300 Ω, CL = 35 pF 190 255 ns max VS = 8 V; Figure 23 Break-Before-Make Time Delay, tD 50

Charge Injection −0.8 Off Isolation 75 Channel-to-Channel Crosstalk 85

−3 dB Bandwidth 800

10 ns min V

CS (Off) 1.6 pF typ f = 1 MHz; VS = 6 V

1.9 pF max f = 1 MHz; VS = 6 V CD, CS (On) 4 pF typ f = 1 MHz; VS = 6 V

4.9 pF max f = 1 MHz; VS = 6 V

POWER REQUIREMENTS

IDD 0.001 μA typ Digital inputs = 0 V or VDD

1.0 μA max

IDD 170 μA typ Digital inputs = 5 V

Temperature range for Y version is −40°C to +125°C.

Guaranteed by design; not subject to production test.

230 μA max

−40°C to +125°C

Unit Test Conditions/Comments

= 10.8 V, VSS = 0 V

= 0 V to 10 V, IS = −1 mA

VDD = 13.2 V

or V

INH

INL

pF typ

ns typ RL = 300 Ω, CL = 35 pF

= VS2 = 8 V; Figure 24

pC typ VS = 6 V, RS = 0 Ω, CL = 1 nF; Figure 25 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; Figure 26; dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; Figure 27 MHz typ RL = 50 Ω, CL = 5 pF; Figure 28

VDD = 13.2 V

Rev. 0 | Page 5 of 16

ADG1236

ABSOLUTE MAXIMUM RATINGS

TA = 25°C, unless otherwise noted.

Table 3.

Parameter Rating

VDD to VSS 35 V VDD to GND −0.3 V to +25 V VSS to GND +0.3 V to −25 V Analog Inputs1

Digital Inputs1

Peak Current, S or D

Continuous Current per

Channel, S or D

Operating Temperature Range

Automotive (Y Version) −40°C to +125°C Storage Temperature Range −65°C to +150°C Junction Temperature 150°C 16-Lead TSSOP, θJA Thermal

Impedance 12-Lead LFCSP, θJA Thermal

Impedance Reflow Soldering Peak

Temperature, Pb Free

Over voltages at IN, S, or D are clamped by internal diodes. Current should

be limited to the maximum ratings given.

− 0.3 V to VDD + 0.3 V or

30 mA, whichever occurs first GND − 0.3 V to V

30 mA, whichever occurs first 100 mA (pulsed at 1 ms,

10% duty cycle max) 25 mA

112°C/W

80°C/W

260°C

+ 0.3 V or

Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

TRUTH TABLE FOR SWITCHES

Table 4.

IN Switch A Switch B

0 Off On 1 On Off

ESD CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.

Rev. 0 | Page 6 of 16

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