ANALOG DEVICES ADG1233 Service Manual

Low Capacitance, Triple/Quad SPDT

www.BDTIC.com/ADI

FEATURES

1.5 pF off capacitance

0.5 pC charge injection
33 V supply range
120 Ω on resistance
Fully specified at ±15 V/+12 V
3 V logic-compatible inputs
Rail-to-rail operation
Break-before-make switching action
16-lead TSSOP, 20-lead TSSOP, and 4 mm × 4 mm LFCSP
Typical power consumption (<0.03 μW)

APPLICATIONS

Audio and video routing
Automatic test equipment
Data acquisition systems
Battery-powered systems
Sample-and-hold systems
Communication systems

±15 V/+12 V i CMOS™ Switches

ADG1233/ADG1234

FUNCTIONAL BLOCK DIAGRAMS

S1A

D1

S1B

S2B

D2

S2A

SWITCHES SHOWN FOR A LOGIC 1 INPUT

S1A

D1

S1B

ADG1233

LOGIC

IN2IN1 IN3

Figure 1.

ADG1234

EN

S3B

D3

S3A

S4A

D4

S4B

05743-001

GENERAL DESCRIPTION

The ADG1233 and ADG1234 are monolithic iCMOS analog
switches comprising three independently selectable single-pole,
double throw SPDT switches and four independently selectable
SPDT switches, respectively.

All channels exhibit break-before-make switching action

venting momentary shorting when switching channels.

pre

EN

An

input on the ADG1233 and ADG1234 is used to
enable or disable the device. When disabled, all channels are
switched off.

The iCMOS (industrial-CMOS) modular manufacturing process
combines a high voltage complementary metal-oxide semi­conductor (CMOS) and bipolar technologies. It enables the
development of a wide range of high performance analog ICs
capable of 33 V operation in a footprint that no other generation of
high voltage parts has been able to achieve. Unlike analog ICs
using conventional CMOS processes, iCMOS components can
tolerate high supply voltages while providing increased perfor­mance, dramatically lowered power consumption, and reduced
package size.

The ultralow capacitance and charge injection of these multiplexers
ma

ke them ideal solutions for data acquisition and sample-and-

hold applications, where low glitch and fast settling are required.

S2B

D2

S2A

LOGIC

IN4

SWITCHES SHOWN FOR A LOG IC 1 INPUT

IN2IN1 IN3

Figure 2.

EN

S3B

D3

S3A

05743-038

Fast switching speed coupled with high signal bandwidth make the

arts suitable for video signal switching. iCMOS construction

p
ensures ultralow power dissipation, making the parts ideally
suited for portable and battery-powered instruments.

PRODUCT HIGHLIGHTS

1. 1.5 pF off capacitance (±15 V supply).

2. 0.5 pC c

3. 3 V log

4. 16-lead TSSO

harge injection.

ic-compatible digital input, V

= 2.0 V, VIL = 0.8 V.

IH

P, 20-lead TSSOP, and 4 mm × 4 mm LFCSP.

Rev. A

Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Anal og Devices for its use, nor for any infringements of patents or ot her
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone] www.analog.com
Fax: [phone] ©2006 Analog Devices, Inc. All rights reserved.

ADG1233/ADG1234

www.BDTIC.com/ADI

TABLE OF CONTENTS

Features.............................................................................................. 1

Absolute Maximum Ratings ............................................................7

Applications....................................................................................... 1

General Description ......................................................................... 1

Functional Block Diagrams............................................................. 1

Product Highlights ........................................................................... 1

Revision History ............................................................................... 2

Specifications..................................................................................... 3

Dual Supply................................................................................... 3

Single Supply................................................................................. 5

REVISION HISTORY

8/06—Rev. 0 to Rev. A

Updated Format…………………………….….…………Universal
C

hanges to Table 1…………………………………………….…...3

Changes to Table 2………………………………………………....4

Changes to Figure 11……………………..………………………10
Changes to Figure 12……………………………………………..11

1/06—Revision 0: Initial Version

ESD Caution...................................................................................7

Pin Configurations and Function Descriptions............................8

Terminology.......................................................................................9

Typical Performance Characteristics........................................... 10

Test Circuits..................................................................................... 13

Outline Dimensions....................................................................... 15

Ordering Guide .......................................................................... 16

Rev. A | Page 2 of 16

ADG1233/ADG1234

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SPECIFICATIONS

DUAL SUPPLY

VDD = +15 V ± 10%, VSS = −15 V ± 10%, GND = 0 V, unless otherwise noted.

Table 1.

Y Version1

Parameter

+25°C −40°C to +85°C −40°C to +125°C

ANALOG SWITCH

Analog Signal Range VSS to VDD V
On Resistance (RON) 120 Ω typ VS = ±10 V, IS = −1 mA; see Figure 24
190 230 260 Ω max VDD = +13.5 V, VSS = −13.5 V
On Resistance Match Between

Channels (∆R

)

ON

3.5 Ω typ V

6 10 12 Ω max
On Resistance Flatness (R

) 20 Ω typ VS = −5 V, 0 V, +5 V; IS = −1 mA

FLAT (ON)

60 72 79 Ω max
LEAKAGE CURRENTS VDD = +16.5 V, VSS = −16.5 V

Source Off Leakage IS (Off) ±0.02 nA typ VD = ±10 V, VS = −10 V; see Figure 25
±0.1 ±0.6 ±1 nA max
Drain Off Leakage ID (Off) ±0.02 nA typ

±0.1 ±0.6 ±1 nA max
Channel On Leakage ID, IS (On) ±0.02 nA typ VS = VD = ±10 V; see Figure 26
±0.2 ±0.6 ±1 nA max

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V

2.0 V min

INH

0.8 V max

INL

Input Current
I

or I

±0.005 μA typ VIN = V

INL

INH

±0.1 μA max
Digital Input Capacitance, CIN 3 pF typ

DYNAMIC CHARACTERISTICS2

t

110 ns typ RL = 300 Ω, CL = 35 pF

TRANSITION

130 150 170 ns max VS = 10 V; see Figure 27
t

25 ns typ RL = 300 Ω, CL = 35 pF

BBM

10 ns min VS1 = VS2 = +10 V; see Figure 28

tON (EN) 120 ns typ RL = 300 Ω, CL = 35 pF

140 170 195 ns max VS = 10 V; see Figure 29

t

(EN) 40 ns typ RL = 300 Ω, CL = 35 pF

OFF

45 55 60 ns max VS = 10 V; see Figure 29
Charge Injection 0.5 pC typ

Off Isolation −80 dB typ

Channel-to-Channel Crosstalk −85 dB typ

Total Harmonic Distortion, THD + N 0.14 % typ

−3 dB Bandwidth 900 MHz typ RL = 50 Ω, CL = 5 pF; see Figure 32
CS (Off) 1.5 pF typ f = 1 MHz; VS = 0 V

1.7 pF max f = 1 MHz; VS = 0 V
CD (Off) 1.6 pF typ f = 1 MHz; VS = 0 V

1.8 pF max f = 1 MHz; VS = 0 V
CD, CS (On) 3.5 pF typ f = 1 MHz; VS = 0 V
4 pF max f = 1 MHz; VS = 0 V

Unit Test Conditions/Comments

= ±10 V, IS = −1 mA

S

V

= 1 V/10 V, VD = 10 V/1 V;

S

see Figure 25

or V

INH

INL

V

= 0 V, RS = 0 Ω, CL = 1 nF;

S

see Figure 30
R

= 50 Ω, CL = 5 pF, f = 1 MHz; see

L

Figure 31
R

= 50 Ω, CL = 5 pF, f = 1 MHz;

L

see Figure 33
R

= 10 kΩ, 5 V rms, f = 20 Hz to

L

20 kHz; see Figure 34

Rev. A | Page 3 of 16

ADG1233/ADG1234

www.BDTIC.com/ADI

Y Version

Parameter

POWER REQUIREMENTS VDD = +16.5 V, VSS = −16.5 V

IDD 0.002 μA typ Digital inputs = 0 V or VDD

1.0 μA max
IDD 260 μA typ Digital inputs = 5 V
420 μA max
ISS 0.002 μA typ Digital inputs = 0 V or VDD

1.0 μA max
ISS 0.002 μA typ Digital inputs = 5 V

1.0 μA max
VDD/VSS ±5/±16.5 V min/max GND = 0 V

1

Temperature range for the Y version: −40°C to +125°C.

2

Guaranteed by design, not subject to production test.

+25°C −40°C to +85°C −40°C to +125°C

1

Unit Test Conditions/Comments

Rev. A | Page 4 of 16

ADG1233/ADG1234

www.BDTIC.com/ADI

SINGLE SUPPLY

VDD = 12 V ± 10%, VSS = 0 V, GND = 0 V, unless otherwise noted.

Table 2.

Y Version1
Parameter +25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 to VDD V

V

On Resistance (RON) 300 Ω typ

475 567 625 Ω max VDD = 10.8 V, VSS = 0 V
On Resistance Match Between

Channels (∆R

)

ON

5 Ω typ V

16 26 27 Ω max
On Resistance Flatness (R

) 60 Ω typ VS = 3 V, 6 V, 9 V, IS = −1 mA

FLAT (ON)

LEAKAGE CURRENTS VDD = 13.2 V

Source Off Leakage IS (Off) ±0.02 nA typ

±0.1 ±0.6 ±1 nA max
Drain Off Leakage ID (Off) ±0.02 nA typ

±0.1 ±0.6 ±1 nA max
Channel On Leakage ID, IS (On) ±0.02 nA typ VS = VD = 1 V or 10 V, see Figure 26
±0.2 ±0.6 ±1 nA max

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V
Input Current, I

INL

2.0 V min

INH

0.8 V max

INL

or I

±0.001 μA typ

INH

±0.1 μA max VIN = V

Digital Input Capacitance, CIN 2 pF typ

DYNAMIC CHARACTERISTICS2

t

135 ns typ RL = 300 Ω, CL = 35 pF

TRANSITION

170 200 230 VS = 8 V; see Figure 27
t

45 ns typ RL = 300 Ω, CL = 35 pF

BBM

10 ns min VS1 = V

tON (EN) 150 ns typ RL = 300 Ω, CL = 35 pF
195 230 265 VS = 8 V; see Figure 29
t

(EN) 45 ns typ RL = 300 Ω, CL = 35 pF

OFF

60 70 75 VS = 8 V; see Figure 29

Charge Injection −0.3 pC typ

Off Isolation −80 dB typ

Channel-to-Channel Crosstalk −85 dB typ

−3 dB Bandwidth 600 MHz typ RL = 50 Ω, CL = 5 pF; see Figure 32
CS (Off) 1.5 pF typ f = 1 MHz; VS = 6 V

1.7 pF max f = 1 MHz; VS = 6 V
CD (Off) 2 pF typ f = 1 MHz; VS = 6 V

2.2 pF max f = 1 MHz; VS = 6 V
CD, CS (On) 4 pF typ f = 1 MHz; VS = 6 V

4.5 pF max f = 1 MHz; VS = 6 V

= 0 V to10 V, IS = −1 mA;

S

see Figure 24

= 0 V to10 V, IS = −1 mA

S

V

= 1 V/10 V, VD = 10 V/1 V;

S

see Figure 25

V

= 1 V/10 V, VD = 10 V/1 V;

S

see Figure 25

or V

INL

S2

V

= 6 V, RS = 0 Ω, CL = 1 nF; see

S

INH

= 8 V; see Figure 28

Figure 30
R

= 50 Ω, CL = 5 pF, f = 1 MHz;

L

see Figure 31
R

= 50 Ω, CL = 5 pF, f = 1 MHz;

L

see Figure 33

Rev. A | Page 5 of 16