2.6 pF on capacitance
<1 pC charge injection
33 V supply range
120 Ω on resistance
Fully specified at ±15 V, +12 V
supply required
No V
L
3 V logic-compatible inputs
Rail-to-rail operation
16-lead TSSOP and 16-lead LFCSP
Typical power consumption: <0.03 μW
APPLICATIONS
Automatic test equipment
Data acquisition systems
Battery-powered systems
Sample-and-hold systems
Audio signal routing
Video signal routing
Communication systems
GENERAL DESCRIPTION
The ADG1211/ADG1212/ADG1213 are monolithic complementary metal-oxide semiconductor (CMOS) devices containing
four independently selectable switches designed on an iCMOS
(industrial CMOS) process. iCMOS is a modular manufacturing
process combining high voltage CMOS and bipolar technologies.
It enables the development of a wide range of high performance
analog ICs capable of 33 V operation in a footprint that no
previous generation of high voltage parts has been able to achieve.
Unlike analog ICs using conventional CMOS processes, iCMOS
components can tolerate high supply voltages while providing
increased performance, dramatically lower power consumption,
and reduced package size.
The ultralow capacitance and charge injection of these switches
make them ideal solutions for data acquisition and sample-andhold applications, where low glitch and fast settling are required.
Fast switching speed coupled with high signal bandwidth make
the parts suitable for video signal switching.
ADG1211/ADG1212/ADG1213
FUNCTIONAL BLOCK DIAGRAM
IN1
IN2
IN3
IN4
ADG1211
S1
IN1
D1
S2
IN2
D2
S3
D3
S4
D4
SWITCHES SHOWN FOR A LOGIC 1 INPUT
ADG1212
IN3
IN4
Figure 1.
S1
IN1
D1
S2
IN2
D2
S3
D3
S4
D4
ADG1213
IN3
IN4
iCMOS construction ensures ultralow power dissipation,
making the parts ideally suited for portable and batterypowered instruments.
The ADG1211/ADG1212/ADG1213 contain four independent
single-pole/single-throw (SPST) switches. The ADG1211 and
ADG1212 differ only in that the digital control logic is inverted.
The ADG1211 switches are turned on with Logic 0 on the
appropriate control input, while Logic 1 is required for the
ADG1212. The ADG1213 has two switches with digital control
logic similar to that of the ADG1211; the logic is inverted on
the other two switches. The ADG1213 exhibits break-beforemake switching action for use in multiplexer applications.
Each switch conducts equally well in both directions when on
and has an input signal range that extends to the supplies. In the
off condition, signal levels up to the supplies are blocked.
PRODUCT HIGHLIGHTS
1. Ultralow capacitance.
2. <1 pC charge injection.
3. 3 V logic-compatible digital inputs: V
4. No V
logic power supply required.
L
5. Ultralow power dissipation: <0.03 μW.
6. 16-lead TSSOP and 3 mm × 3 mm LFCSP packages.
= 2.0 V, VIL = 0.8 V.
IH
S1
D1
S2
D2
S3
D3
S4
D4
04778-001
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable.
However, no responsibility is assumed by Analog Devices for its use, nor for any
infringements of patents or other rights of third parties that may result from its use.
Specifications subject to change without notice. No license is granted by implication
or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
VDD = 15 V ± 10%, VSS = −15 V ± 10%, GND = 0 V, unless otherwise noted.
Table 1.
Y Version
−40°C to
Parameter 25°C
+85°C
ANALOG SWITCH
Analog Signal Range VDD to V
On Resistance (RON) 120 Ω typ VS = ±10 V, IS = −1 mA; Figure 20
190 230 260 Ω max VDD = +13.5 V, VSS = −13.5 V
On Resistance Match Between
Channels (∆R
)
ON
2.5 Ω typ VS = ±10 V, IS = −1 mA
6 10 11 Ω max
On Resistance Flatness (R
) 20 Ω typ VS = −5 V/0 V/+5 V; IS = −1 mA
FLAT(ON)
57 72 79 Ω max
LEAKAGE CURRENTS VDD = +16.5 V, VSS = −16.5 V
Source Off Leakage, IS (Off) ±0.02 nA typ
±0.1 ±0.6 ±1 nA max
Drain Off Leakage, ID (Off) ±0.02 nA typ
±0.1 ±0.6 ±1 nA max
Channel On Leakage, ID, IS (On) ±0.02 nA typ VS = VD = ±10 V; Figure 22
±0.1 ±0.6 ±1 nA max
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
Input Current, I
INL
2.0 V min
INH
0.8 V max
INL
or I
INH
0.005 μA typ VIN = V
±0.1 μA max
Digital Input Capacitance, C
IN
2.5 pF typ
DYNAMIC CHARACTERISTICS2
tON 105 ns typ RL = 300 Ω, CL = 35 pF
125 160 185 ns max VS = 10 V; Figure 23
t
40 ns typ RL = 300 Ω, CL = 35 pF
OFF
50 60 60 ns max VS = 10 V; Figure 23
Break-Before-Make Time Delay, tD25 ns typ RL = 300 Ω, CL = 35 pF
(ADG1213 Only) 10 ns min VS1 = VS2 = 10 V; Figure 24
Charge Injection −0.3 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF; Figure 25
Off Isolation 80 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; Figure 26
Channel-to-Channel Crosstalk 90 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; Figure 27
Total Harmonic Distortion + Noise 0.15 % typ RL = 10 kΩ, 5 V rms, f = 20 Hz to 20 kHz
−3 dB Bandwidth 1000 MHz typ RL = 50 Ω, CL = 5 pF; Figure 28
CS (Off) 0.9 pF typ VS = 0 V, f = 1 MHz
1.1 pF max VS = 0 V, f = 1 MHz
CD (Off) 1 pF typ VS = 0 V, f = 1 MHz
1.2 pF max VS = 0 V, f = 1 MHz
CD, CS (On) 2.6 pF typ VS = 0 V, f = 1 MHz
3 pF max VS = 0 V, f = 1 MHz
1
−40°C to
+125°C
Unit Test Conditions/Comments
V
SS
VS = ±10 V, VD = ∓10 V; Figure 21
VS = ±10 V, VD = ∓10 V; Figure 21
or V
INL
INH
Rev. 0 | Page 3 of 16
ADG1211/ADG1212/ADG1213
Y Version
−40°C to
Parameter 25°C
+85°C
1
−40°C to
+125°C
Unit Test Conditions/Comments
POWER REQUIREMENTS VDD = +16.5 V, VSS = −16.5 V
IDD 0.001 μA typ Digital inputs = 0 V or VDD
1.0 μA max
IDD 220 μA typ Digital inputs = 5 V
320 μA max
ISS 0.001 μA typ Digital inputs = 0 V or VDD
1.0 μA max
I
SS
0.001 μA typ Digital inputs = 5 V
1.0 μA max
1
Temperature range for Y version is −40°C to +125°C.
2
Guaranteed by design, not subject to production test.
Analog Signal Range 0 V to V
On Resistance (RON) 300 Ω typ VS = 0 V to 10 V, IS = −1 mA; Figure 20
475 567 625 Ω max VDD = 10.8 V, VSS = 0 V
On Resistance Match Between
Channels (∆R
)
ON
4.5 Ω typ V
12 26 27 Ω max
On Resistance Flatness (R
) 60 Ω typ VS = 3 V/6 V/9 V, IS = −1 mA
FLAT(ON)
LEAKAGE CURRENTS VDD = 13.2 V, VSS = 0 V
Source Off Leakage, IS (Off) ±0.02 nA typ VS = 1 V/10 V, VD = 10 V/1 V; Figure 21
±0.1 ±0.6 ±1 nA max
Drain Off Leakage, ID (Off) ±0.02 nA typ VS = 1 V/10 V, VD = 10 V/1 V; Figure 21
±0.1 ±0.6 ±1 nA max
Channel On Leakage, ID, IS (On) ±0.02 nA typ VS = VD = 1 V or 10 V; Figure 22
±0.1 ±0.6 ±1 nA max
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
Input Current, I
INL
2.0 V min
INH
0.8 V max
INL
or I
INH
0.001 μA typ VIN = V
±0.1 μA max
Digital Input Capacitance, C
IN
3 pF typ
DYNAMIC CHARACTERISTICS2
t
ON
120 ns typ RL = 300 Ω, CL = 35 pF
155 190 225 ns max VS = 8 V; Figure 23
t
45 ns typ RL = 300 Ω, CL = 35 pF
OFF
65 75 85 ns max VS = 8 V; Figure 23
Break-Before-Make Time Delay, tD 50 ns typ RL = 300 Ω, CL = 35 pF
(ADG1213 Only) 10 ns min VS1 = VS2 = 8 V; Figure 24
Charge Injection 0 pC typ VS = 6 V, RS = 0 Ω, CL = 1 nF; Figure 25
Off Isolation 80 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; Figure 26
Channel-to-Channel Crosstalk 90 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; Figure 27
−3 dB Bandwidth 900 MHz typ RL = 50 Ω, CL = 5 pF; Figure 28
CS (Off) 1.2 pF typ VS = 6 V, f = 1 MHz
1.4 pF max VS = 6 V, f = 1 MHz
CD (Off) 1.3 pF typ VS = 6 V, f = 1 MHz
1.5 pF max VS = 6 V, f = 1 MHz
CD, CS (On) 3.2 pF typ VS = 6 V, f = 1 MHz
3.9 pF max VS = 6 V, f = 1 MHz
POWER REQUIREMENTS VDD = 13.2 V
I
DD
0.001 μA typ Digital inputs = 0 V or VDD
1.0 μA max
IDD 220 μA typ Digital inputs = 5 V
320 μA max
1
Temperature range for Y version is −40°C to +125°C.
2
Guaranteed by design, not subject to production test.
1
−40°C to
+125°C
Unit Test Conditions/Comments
V
DD
= 0 V to 10 V, IS = −1 mA
S
or V
INH
INL
Rev. 0 | Page 5 of 16
ADG1211/ADG1212/ADG1213
ABSOLUTE MAXIMUM RATINGS
T = 25°C, unless otherwise noted.
A
Table 3.
Parameter Rating
V to V35 V
DDSS
V to GND −0.3 V to +25 V
DD
V to GND +0.3 V to −25 V
SS
Analog Inputs
Digital Inputs
Peak Current, S or D
Continuous Current per
Channel, S or D
Operating Temperature Range
Automotive (Y Version) −40°C to +125°C
Storage Temperature Range −65°C to +150°C
Junction Temperature 150°C
16-Lead TSSOP, θJA Thermal
Overvoltages at IN, S, or D are clamped by internal diodes. Current should be
limited to the maximum ratings given.
1
V – 0.3 V to V
SSDD
+ 0.3 V or
30 mA, whichever occurs first
1
GND – 0.3 V to V
+ 0.3 V or
DD
30 mA, whichever occurs first
100 mA (pulsed at 1 ms,
10% duty cycle max)
25 mA
112°C/W
72.7°C/W
260°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability. Only one absolute maximum rating may be
applied at any one time.
Table 4. ADG1211/ADG1212 Truth Table
ADG1211 INx ADG1212 INx Switch Condition
0 1 On
1 0 Off
Table 5. ADG1213 Truth Table
ADG1213 INx Switch 1, 4 Switch 2, 3
0 Off On
1 On Off
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
Rev. 0 | Page 6 of 16
ADG1211/ADG1212/ADG1213
PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS
ADG1211/ADG1212/ADG1213
IN1
D2
D1
IN2
13
14
15
16
1
IN1
2
D1
3
S1
ADG1211/
4
V
GND
ADG1212/
SS
ADG1213
5
TOP VIEW
6
S4
7
D4
8
IN4IN3
NC = NO CONNECT
16
IN2
15
D2
14
S2
13
V
DD
12
NC
11
S3
10
D3
9
04788-002
SS
NOTES
1. EXPOSED PAD TIED TO SUBSTRATE, V
Figure 2. TSSOP Pin Configuration
Table 6. Pin Function Descriptions
Pin No.
TSSOP LFCSP
Mnemonic
Description
1 15 IN1 Logic Control Input.
2 16 D1 Drain Terminal. Can be an input or output.
3 1 S1 Source Terminal. Can be an input or output.
4 2 V
SS
Most Negative Power Supply Potential.
5 3 GND Ground (0 V) Reference.
6 4 S4 Source Terminal. Can be an input or output.
7 5 D4 Drain Terminal. Can be an input or output.
8 6 IN4 Logic Control Input.
9 7 IN3 Logic Control Input.
10 8 D3 Drain Terminal. Can be an input or output.
11 9 S3 Source Terminal. Can be an input or output.
12 10 NC No Connection.
13 11 V
DD
Most Positive Power Supply Potential.
14 12 S2 Source Terminal. Can be an input or output.
15 13 D2 Drain Terminal. Can be an input or output.
16 14 IN2 Logic Control Input.
PIN 1
INDICATOR
1S1
2V
3GND
TOP VIEW
(Not to Scale)
4S4
5
6
D4
IN4
NC = NO CONNECT
12 S2
11 V
DD
10 NC
9S3
8
7
3
D3
IN
Figure 3. LFCSP Pin Configuration
.
SS
04778-003
Rev. 0 | Page 7 of 16
ADG1211/ADG1212/ADG1213
TERMINOLOGY
IDD
The positive supply current.
, CS (On)
C
D
The on switch capacitance, measured with reference to ground.
I
SS
The negative supply current.
(VS)
V
D
The analog voltage on Terminals D and S.
R
ON
The ohmic resistance between D and S.
R
FLAT(ON)
Flatness is defined as the difference between the maximum and
minimum value of on resistance, as measured over the specified
analog signal range.
(Off)
I
S
The source leakage current with the switch off.
(Off)
I
D
The drain leakage current with the switch off.
, IS (On)
I
D
The channel leakage current with the switch on.
V
INL
The maximum input voltage for Logic 0.
V
INH
The minimum input voltage for Logic 1.
(I
INL
INH
)
I
The input current of the digital input.
(Off)
C
S
The off switch source capacitance, measured with reference
to ground.
(Off)
C
D
The off switch drain capacitance, measured with reference
to ground.
C
IN
The digital input capacitance.
t
ON
The delay between applying the digital control input and the
output switching on. See
t
OFF
Figure 23.
The delay between applying the digital control input and the
output switching off. See
Figure 23.
Charge Injection
A measure of the glitch impulse transferred from the digital
input to the analog output during switching.
Off Isolation
A measure of unwanted signal coupling through an off switch.
Crosstalk
A measure of unwanted signal that is coupled through from one
channel to another as a result of parasitic capacitance.
Bandwidth
The frequency at which the output is attenuated by 3 dB.
On Response
The frequency response of the on switch.
Insertion Loss
The loss due to the on resistance of the switch.
THD + N
The ratio of the harmonic amplitude plus noise of the signal to
the fundamental.
Rev. 0 | Page 8 of 16
ADG1211/ADG1212/ADG1213
TYPICAL PERFORMANCE CHARACTERISTICS
200
TA = +25°C
180
160
140
120
100
80
ON RESISTANCE (Ω)
60
40
20
0
–18–15–12–9–6–33 915061218
Figure 4. On Resistance as a Function of VFigure 7. On Resistance as a Function of V
VDD = +13.5V
V
= –13.5V
SS
VDD = +15V
V
= –15V
SS
SOURCE OR DRAIN VOLTAGE (V)
VDD = +16.5V
V
= –16.5V
SS
(V ) for Dual Supply (V
D SD S
04778-008
250
VDD = +15V
= –15V
V
SS
200
150
100
ON RESISTANCE (Ω)
50
0
–15–10–5051015
TA = +125°C
TA = +85°C
TA = –40°C
SOURCE OR DRAIN VOLTAGE (V)
TA = +25°C
) for Different Temperatures,
Dual Supply
04778-006
450
TA = +25°C
400
350
300
250
200
150
ON RESISTANCE (Ω)
100
50
0
–5–4–3–2 –1240135
SOURCE OR DRAIN VOLTAGE (V)
Figure 5. On Resistance as a Function of VFigure 8. On Resistance as a Function of V
VDD = +5.5V
= –5.5V
V
SS
04778-004
(V ) for Dual Supply (V
D SD S
600
VDD = +12V
= 0V
V
SS
500
TA = +85°C
400
300
200
ON RESISTANCE (Ω)
100
0
02468101
TA = –40°C
SOURCE OR DRAIN VOLTAGE (V)
Single Supply
450
TA = 25°C
400
VDD = 10.8V
350
300
250
200
150
ON RESISTANCE (Ω)
100
50
= 0V
V
SS
VDD = 13.2V
= 0V
V
SS
0
024681012
SOURCE OR DRAIN VOLTAGE (V)
Figure 6. On Resistance as a Function of V
VDD = 12V
= 0V
V
SS
(V ) for Single Supply
D S
04778-005
0.20
VDD = +15V
= –15V
V
SS
–0.05
LEAKAGE (nA)
–0.10
–0.15
–0.20
0.15
0.10
0.05
0
= +10V/–10V
V
BIAS
200406080100120
TEMPERATURE (°C)
Figure 9. Leakage Currents as a Function of Temperature, Dual Supply
TA = +125°C
TA = +25°C
) for Different Temperatures,
ID, IS (ON)
ID (OFF)
IS (OFF)
04778-007
2
04778-012
Rev. 0 | Page 9 of 16
ADG1211/ADG1212/ADG1213
0.30
VDD = 12V
= 0V
V
SS
0.25
0.20
0.15
0.10
0.05
LEAKAGE (nA)
–0.05
–0.10
Figure 10. Leakage Currents as a Function of Temperature, Single Supply
= 1V/10V
V
BIAS
ID, IS (ON)
IS (OFF)
0
ID (OFF)
200406080100120
TEMPERATURE (°C)
200
180
12V SS T
OFF
ON
15V DS T
15V DS T
ON
OFF
160
140
120
100
TIME (ns)
80
60
40
20
04778-013
0
–40–20402006080100120
Figure 13. T
ON
12V SS T
TEMPERATURE (°C)
/T Times vs. Temperature
OFF
04778-016
60
50
40
30
(μA)
DD
I
20
10
0
02468101214
6
4
2
0
–2
CHARGE INJECTION (pC)
–4
–6
–15–10–5051015
VDD = +12V, VSS = 0V
Figure 11. I
SOURCE TO DRAIN
DRAIN TO SOURCE
T
= +25°C
A
VDD = +5V, VSS = –5V
VDD = +15V, VSS = –15V
LOGIC, INX (V)
vs. Log ic Level
DD
VS (V)
IDD PER CHANNEL
T
= +25°C
A
VDD = +15V, VSS = –15V
VDD = +12V, VSS = 0V
Figure 12. Charge Injection vs. Source Voltage
04778-011
04778-015
0
VDD = +15V
–10
V
= –15V
SS
T
= +25°C
A
–20
–30
–40
–50
–60
–70
OFF ISOLATION (dB)
–80
–90
–100
–110
10k100k1M10M100M1G
FREQUENCY (Hz)
Figure 14. Off Isolation vs. Frequency
0
VDD = +15V
–10
V
= –15V
SS
T
= +25°C
–20
A
–30
–40
–50
–60
–70
CROSSTALK (dB)
–80
–90
–100
–110
–120
10k100k1M10M100M
FREQUENCY (Hz)
Figure 15. Cross talk vs. Frequency
04778-017
04778-018
Rev. 0 | Page 10 of 16
ADG1211/ADG1212/ADG1213
0
VDD = +15V
V
= –15V
SS
T
= +25°C
A
–5
–10
–15
–20
ATTENUATIOIN (dB)
–25
–30
10k100k1M10M1G100M10G
FREQUENCY (Hz)
Figure 16. On Response vs. Frequency
04778-019
3.0
SOURCE/DRAIN ON
VDD = +15V
2.5
V
= –15V
SS
T
= +25°C
A
2.0
1.5
CAPACITANCE (pF)
1.0
0.5
–10 –8–6–4 –20246810
DRAIN OFF
SOURCE OFF
V
(V)
BIAS
Figure 18. Capacitance vs. Source Voltage, Dual Supply
04778-031
10.00
LOAD = +10kΩ
T
= +25°C
A
1.00
VDD = +5V, VSS = –5V, VS = +3.5Vrms
THD+N (%)
0.10
0.01
VDD = +15V, VSS = –15V, VS = +5Vrms
101001k10k100k
FREQUENCY (Hz)
Figure 17. THD + N vs. Frequency
04778-029
4.0
VDD = 12V
V
= 0V
SS
3.5
T
= 25°C
A
3.0
2.5
2.0
1.5
CAPACITANCE (pF)
1.0
0.5
0
024 68101
DRAIN OFF
SOURCE OFF
SOURCE/DRAIN ON
V
(V)
BIAS
Figure 19. Capacitance vs. Source Voltage, Single Supply
04778-030
2
Rev. 0 | Page 11 of 16
ADG1211/ADG1212/ADG1213
V
V
V
TEST CIRCUITS
I
DS
V1
SD
IS (OFF)ID (OFF)
SD
AA
SD
NC
ID (ON)
A
V
S
RON = V1/I
DS
04778-020
S
V
D
04778-021
NC = NO CONNECT
Figure 20. Test Circuit 1—On Resistance Figure 21. Test Circuit 2—Off Leakage Figure 22. Test Circuit 3—On Leakage
V
V
DD
SS
0.1μF
V
DD
SD
V
S
IN
GND
0.1μF
ADG1212
V
V
SS
V
OUT
R
300Ω
C
L
L
35pF
IN
V
IN
V
OUT
ADG1211
50%50%
50%50%
90%90%
t
ON
t
OFF
04778-023
Figure 23. Test Circuit 4—Switching Times
V
V
DD
SS
0.1μF
V
DD
IN1,
IN2
S1D1
S2D2
ADG1213
GND
S1
S2
0.1μF
V
SS
V
OUT1
C
R
L
300Ω
C
L
35pF
V
OUT2
R
300Ω
L
L
35pF
Figure 24. Test Circuit 5—Break-Before-Make Time Delay
V
V
V
OUT1
OUT2
IN
0V
0V
0V
50%50%
90%
90%
t
D
t
D
90%
90%
V
D
04778-024
04778-022
V
V
DD
SS
V
V
DD
SS
C
1nF
V
OUT
L
R
S
V
S
SD
IN
GND
V
IN
V
IN
V
OUT
ADG1212
ADG1211
Q
INJ
ON
= CL×ΔV
OUT
OFF
ΔV
OUT
04778-025
Figure 25. Test Circuit 6—Charge Injection
Rev. 0 | Page 12 of 16
ADG1211/ADG1212/ADG1213
V
V
0.1μF
V
DD
SS
0.1μF
0.1μF
V
V
DD
SS
0.1μF
V
IN
V
DD
SS
S
50Ω
D
V
IN
GND
OFF ISOLATION = 20 LOG
Figure 26. Test Circuit 7—Off Isolation Figure 28. Test Circuit 9—Bandwidth
V
DD
0.1μF
NETWORK
ANALYZER
V
OUT
R
50Ω
L
V
DD
S1
S2
V
S
GND
CHANNEL-TO-CHANNEL CROSSTALK = 20 LOG
Figure 27. Test Circuit 8—Channel-to-Channel Crosstalk
NETWORK
ANALYZER
50Ω
R
L
50Ω
V
SS
V
SS
V
OUT
V
S
V
V
OUT
0.1μF
D
V
S
IN
V
DD
SS
S
D
IN
GND
V
OUT
V
04778-026
S
V
0.1μF
R
50Ω
04778-027
IN
V
IN
INSERTION LOSS = 20 LOG
V
DD
V
SS
V
DD
SS
S
D
GND
0.1μF
R
10kΩ
ANALYZER
R
50Ω
V
OUT
WITHOUT SWITCH
V
OUT
AUDIO PRECISION
V
L
NETWORK
50Ω
V
S
V
OUT
L
WITH SWITCH
R
S
V
S
V p-p
OUT
04778-028
04778-032
Figure 29. Test Circuit 10—THD + Noise
Rev. 0 | Page 13 of 16
ADG1211/ADG1212/ADG1213
R
R
OUTLINE DIMENSIONS
5.10
5.00
4.90
0.15
0.05
4.50
4.40
4.30
PIN 1
16
0.65
BSC
COPLANARITY
COMPLIANT TO JEDEC STANDARDS MO-153AB
0.10
0.30
0.19
9
81
1.20
MAX
SEATING
PLANE
6.40
BSC
0.20
0.09
8°
0°
0.75
0.60
0.45
Figure 30. 16-Lead Thin Shrink Small Outline Package [TSSOP]
(RU-16)
Dimensions shown in millimeters
0.50
0.40
PIN 1
INDICATO
0.90
0.85
0.80
SEATING
PLANE
12° MAX
3.00
BSC SQ
TOP
VIEW
0.30
0.23
0.18
*
COMPLIANT
EXCEPT FOR EXPOSED PAD DIMENSION.
2.75
BSC SQ
0.80 MAX
0.65 TYP
0.05 MAX
0.02 NOM
0.20 REF
TO
JEDEC STANDARDS MO-220-VEED-2
0.45
0.50
BSC
1.50 REF
0.60 MAX
13
12
(BOTTOM VIEW)
9
8
Figure 31. 16-Lead Lead Frame Chip Scale Package [LFCSP_VQ]
3 mm × 3 mm Body, Very Thin Quad
(CP-16-3)
Dimensions shown in millimeters
EXPOSED
PAD
0.30
16
1
4
5
N
I
P
D
N
I
*
1.65
1.50 SQ
1.35
0.25 MIN
1
O
T
C
I
A
Rev. 0 | Page 14 of 16
ADG1211/ADG1212/ADG1213
ORDERING GUIDE
Model Temperature Range Package Description Package Option
ADG1211YRUZ
ADG1211YRUZ-REEL
ADG1211YRUZ-REEL7
ADG1211YCPZ-500RL71−40°C to +125°C Lead Frame Chip Scale Package (LFCSP_VQ) CP-16-3
ADG1211YCPZ-REEL7
ADG1212YRUZ
ADG1212YRUZ-REEL
ADG1212YRUZ-REEL7
ADG1212YCPZ-500RL71−40°C to +125°C Lead Frame Chip Scale Package (LFCSP_VQ) CP-16-3
ADG1212YCPZ-REEL7
ADG1213YRUZ
ADG1213YRUZ-REEL
ADG1213YRUZ-REEL7
ADG1213YCPZ-500RL71−40°C to +125°C Lead Frame Chip Scale Package (LFCSP_VQ) CP-16-3
ADG1213YCPZ-REEL7
1
Z = Pb-free part.
1
1
1
−40°C to +125°C Thin Shrink Small Outline Package (TSSOP) RU-16
1
−40°C to +125°C Thin Shrink Small Outline Package (TSSOP) RU-16
1
−40°C to +125°C Thin Shrink Small Outline Package (TSSOP) RU-16
1
−40°C to +125°C Lead Frame Chip Scale Package (LFCSP_VQ) CP-16-3
−40°C to +125°C Thin Shrink Small Outline Package (TSSOP) RU-16
1
−40°C to +125°C Thin Shrink Small Outline Package (TSSOP) RU-16
1
−40°C to +125°C Thin Shrink Small Outline Package (TSSOP) RU-16
1
−40°C to +125°C Lead Frame Chip Scale Package (LFCSP_VQ) CP-16-3
−40°C to +125°C Thin Shrink Small Outline Package (TSSOP) RU-16
1
−40°C to +125°C Thin Shrink Small Outline Package (TSSOP) RU-16
1
−40°C to +125°C Thin Shrink Small Outline Package (TSSOP) RU-16
1
−40°C to +125°C Lead Frame Chip Scale Package (LFCSP_VQ) CP-16-3