ANALOG DEVICES ADG1211, ADG1212, ADG1213 Service Manual

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Low Capacitance, Low Charge Injection,

±15 V/+12 V iCMOS™ Quad SPST Switches

FEATURES

1 pF off capacitance

2.6 pF on capacitance <1 pC charge injection 33 V supply range 120 Ω on resistance Fully specified at ±15 V, +12 V

supply required

No V

3 V logic-compatible inputs Rail-to-rail operation 16-lead TSSOP and 16-lead LFCSP Typical power consumption: <0.03 μW

APPLICATIONS

Automatic test equipment Data acquisition systems Battery-powered systems Sample-and-hold systems Audio signal routing Video signal routing Communication systems

GENERAL DESCRIPTION

The ADG1211/ADG1212/ADG1213 are monolithic complementary metal-oxide semiconductor (CMOS) devices containing four independently selectable switches designed on an iCMOS (industrial CMOS) process. iCMOS is a modular manufacturing process combining high voltage CMOS and bipolar technologies. It enables the development of a wide range of high performance analog ICs capable of 33 V operation in a footprint that no previous generation of high voltage parts has been able to achieve. Unlike analog ICs using conventional CMOS processes, iCMOS components can tolerate high supply voltages while providing increased performance, dramatically lower power consumption, and reduced package size.

The ultralow capacitance and charge injection of these switches make them ideal solutions for data acquisition and sample-andhold applications, where low glitch and fast settling are required. Fast switching speed coupled with high signal bandwidth make the parts suitable for video signal switching.

ADG1211/ADG1212/ADG1213

FUNCTIONAL BLOCK DIAGRAM

IN1

IN2

IN3

IN4

ADG1211

IN1

D1 S2

IN2

D2 S3

D3 S4

SWITCHES SHOWN FOR A LOGIC 1 INPUT

ADG1212

IN3

IN4

Figure 1.

IN1

D1 S2

IN2

D2 S3

D3 S4

ADG1213

IN3

IN4

iCMOS construction ensures ultralow power dissipation, making the parts ideally suited for portable and batterypowered instruments.

The ADG1211/ADG1212/ADG1213 contain four independent single-pole/single-throw (SPST) switches. The ADG1211 and ADG1212 differ only in that the digital control logic is inverted. The ADG1211 switches are turned on with Logic 0 on the appropriate control input, while Logic 1 is required for the ADG1212. The ADG1213 has two switches with digital control logic similar to that of the ADG1211; the logic is inverted on the other two switches. The ADG1213 exhibits break-beforemake switching action for use in multiplexer applications.

Each switch conducts equally well in both directions when on and has an input signal range that extends to the supplies. In the off condition, signal levels up to the supplies are blocked.

PRODUCT HIGHLIGHTS

1. Ultralow capacitance.

2. <1 pC charge injection.

3. 3 V logic-compatible digital inputs: V

4. No V

logic power supply required.

5. Ultralow power dissipation: <0.03 μW.

6. 16-lead TSSOP and 3 mm × 3 mm LFCSP packages.

= 2.0 V, VIL = 0.8 V.

D1 S2

D2 S3

D3 S4

04778-001

Rev. 0

Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.

ADG1211/ADG1212/ADG1213

TABLE OF CONTENTS

Specifications..................................................................................... 3

Te r mi n ol o g y .......................................................................................8

Dual Supply ................................................................................... 3

Single Supply ................................................................................. 5

Absolute Maximum Ratings............................................................ 6

ESD Caution.................................................................................. 6

Pin Configurations and Function Descriptions ........................... 7

REVISION HISTORY

7/05—Revision 0: Initial Version

Typical Perfor m a n c e Charac t e r isti c s ..............................................9

Test Ci r cu it s ..................................................................................... 12

Outline Dimensions ....................................................................... 14

Ordering Guide .......................................................................... 15

Rev. 0 | Page 2 of 16

ADG1211/ADG1212/ADG1213

SPECIFICATIONS

DUAL SUPPLY

VDD = 15 V ± 10%, VSS = −15 V ± 10%, GND = 0 V, unless otherwise noted.

Table 1.

Y Version

−40°C to

Parameter 25°C

+85°C

ANALOG SWITCH

Analog Signal Range VDD to V On Resistance (RON) 120 Ω typ VS = ±10 V, IS = −1 mA; Figure 20 190 230 260 Ω max VDD = +13.5 V, VSS = −13.5 V On Resistance Match Between

Channels (∆R

)

2.5 Ω typ VS = ±10 V, IS = −1 mA

6 10 11 Ω max

On Resistance Flatness (R

) 20 Ω typ VS = −5 V/0 V/+5 V; IS = −1 mA

FLAT(ON)

57 72 79 Ω max LEAKAGE CURRENTS VDD = +16.5 V, VSS = −16.5 V

Source Off Leakage, IS (Off) ±0.02 nA typ

±0.1 ±0.6 ±1 nA max Drain Off Leakage, ID (Off) ±0.02 nA typ

±0.1 ±0.6 ±1 nA max

Channel On Leakage, ID, IS (On) ±0.02 nA typ VS = VD = ±10 V; Figure 22 ±0.1 ±0.6 ±1 nA max DIGITAL INPUTS

Input High Voltage, V

Input Low Voltage, V

Input Current, I

INL

2.0 V min

INH

0.8 V max

INL

or I

INH

0.005 μA typ VIN = V ±0.1 μA max Digital Input Capacitance, C

2.5 pF typ

DYNAMIC CHARACTERISTICS2

tON 105 ns typ RL = 300 Ω, CL = 35 pF 125 160 185 ns max VS = 10 V; Figure 23 t

40 ns typ RL = 300 Ω, CL = 35 pF

OFF

50 60 60 ns max VS = 10 V; Figure 23 Break-Before-Make Time Delay, tD25 ns typ RL = 300 Ω, CL = 35 pF

(ADG1213 Only) 10 ns min VS1 = VS2 = 10 V; Figure 24 Charge Injection −0.3 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF; Figure 25 Off Isolation 80 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; Figure 26 Channel-to-Channel Crosstalk 90 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; Figure 27 Total Harmonic Distortion + Noise 0.15 % typ RL = 10 kΩ, 5 V rms, f = 20 Hz to 20 kHz

−3 dB Bandwidth 1000 MHz typ RL = 50 Ω, CL = 5 pF; Figure 28 CS (Off) 0.9 pF typ VS = 0 V, f = 1 MHz

1.1 pF max VS = 0 V, f = 1 MHz CD (Off) 1 pF typ VS = 0 V, f = 1 MHz

1.2 pF max VS = 0 V, f = 1 MHz CD, CS (On) 2.6 pF typ VS = 0 V, f = 1 MHz 3 pF max VS = 0 V, f = 1 MHz

−40°C to +125°C

Unit Test Conditions/Comments

VS = ±10 V, VD = ∓10 V; Figure 21

or V

INL

INH

Rev. 0 | Page 3 of 16

ADG1211/ADG1212/ADG1213

Y Version

−40°C to

Parameter 25°C

+85°C

−40°C to +125°C

Unit Test Conditions/Comments

POWER REQUIREMENTS VDD = +16.5 V, VSS = −16.5 V

IDD 0.001 μA typ Digital inputs = 0 V or VDD

1.0 μA max IDD 220 μA typ Digital inputs = 5 V 320 μA max ISS 0.001 μA typ Digital inputs = 0 V or VDD

1.0 μA max I

0.001 μA typ Digital inputs = 5 V

1.0 μA max

Temperature range for Y version is −40°C to +125°C.

Guaranteed by design, not subject to production test.

Rev. 0 | Page 4 of 16

ADG1211/ADG1212/ADG1213

SINGLE SUPPLY

VDD = 12 V ± 10%, VSS = 0 V, GND = 0 V, unless otherwise noted.

Table 2.

Y Version

−40°C to

Parameter 25°C

+85°C

ANALOG SWITCH

Analog Signal Range 0 V to V On Resistance (RON) 300 Ω typ VS = 0 V to 10 V, IS = −1 mA; Figure 20 475 567 625 Ω max VDD = 10.8 V, VSS = 0 V On Resistance Match Between

Channels (∆R

)

4.5 Ω typ V

12 26 27 Ω max

On Resistance Flatness (R

) 60 Ω typ VS = 3 V/6 V/9 V, IS = −1 mA

FLAT(ON)

LEAKAGE CURRENTS VDD = 13.2 V, VSS = 0 V

Source Off Leakage, IS (Off) ±0.02 nA typ VS = 1 V/10 V, VD = 10 V/1 V; Figure 21 ±0.1 ±0.6 ±1 nA max Drain Off Leakage, ID (Off) ±0.02 nA typ VS = 1 V/10 V, VD = 10 V/1 V; Figure 21 ±0.1 ±0.6 ±1 nA max

Channel On Leakage, ID, IS (On) ±0.02 nA typ VS = VD = 1 V or 10 V; Figure 22 ±0.1 ±0.6 ±1 nA max DIGITAL INPUTS

Input High Voltage, V Input Low Voltage, V Input Current, I

INL

2.0 V min

INH

0.8 V max

INL

or I

INH

0.001 μA typ VIN = V

±0.1 μA max

Digital Input Capacitance, C

3 pF typ

DYNAMIC CHARACTERISTICS2

120 ns typ RL = 300 Ω, CL = 35 pF 155 190 225 ns max VS = 8 V; Figure 23 t

45 ns typ RL = 300 Ω, CL = 35 pF

OFF

65 75 85 ns max VS = 8 V; Figure 23 Break-Before-Make Time Delay, tD 50 ns typ RL = 300 Ω, CL = 35 pF

(ADG1213 Only) 10 ns min VS1 = VS2 = 8 V; Figure 24 Charge Injection 0 pC typ VS = 6 V, RS = 0 Ω, CL = 1 nF; Figure 25 Off Isolation 80 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; Figure 26 Channel-to-Channel Crosstalk 90 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; Figure 27

−3 dB Bandwidth 900 MHz typ RL = 50 Ω, CL = 5 pF; Figure 28 CS (Off) 1.2 pF typ VS = 6 V, f = 1 MHz

1.4 pF max VS = 6 V, f = 1 MHz CD (Off) 1.3 pF typ VS = 6 V, f = 1 MHz

1.5 pF max VS = 6 V, f = 1 MHz CD, CS (On) 3.2 pF typ VS = 6 V, f = 1 MHz

3.9 pF max VS = 6 V, f = 1 MHz

POWER REQUIREMENTS VDD = 13.2 V

0.001 μA typ Digital inputs = 0 V or VDD

1.0 μA max IDD 220 μA typ Digital inputs = 5 V 320 μA max

Temperature range for Y version is −40°C to +125°C.

Guaranteed by design, not subject to production test.

−40°C to +125°C

Unit Test Conditions/Comments

= 0 V to 10 V, IS = −1 mA

or V

INH

INL

Rev. 0 | Page 5 of 16

ADG1211/ADG1212/ADG1213

ABSOLUTE MAXIMUM RATINGS

T = 25°C, unless otherwise noted.

Table 3.

Parameter Rating

V to V 35 V

DD SS

V to GND −0.3 V to +25 V

V to GND +0.3 V to −25 V

Analog Inputs

Digital Inputs

Peak Current, S or D

Continuous Current per

Channel, S or D

Operating Temperature Range

Automotive (Y Version) −40°C to +125°C Storage Temperature Range −65°C to +150°C Junction Temperature 150°C 16-Lead TSSOP, θJA Thermal

Impedance (4-Layer Board) 16-Lead LFCSP, θJA Thermal

Impedance Reflow Soldering Peak

Temperature, Pb free

Overvoltages at IN, S, or D are clamped by internal diodes. Current should be

limited to the maximum ratings given.

V – 0.3 V to V

SS DD

+ 0.3 V or

30 mA, whichever occurs first

GND – 0.3 V to V

+ 0.3 V or

30 mA, whichever occurs first 100 mA (pulsed at 1 ms,

10% duty cycle max) 25 mA

112°C/W

72.7°C/W

260°C

Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Only one absolute maximum rating may be applied at any one time.

Table 4. ADG1211/ADG1212 Truth Table

ADG1211 INx ADG1212 INx Switch Condition

0 1 On 1 0 Off

Table 5. ADG1213 Truth Table

ADG1213 INx Switch 1, 4 Switch 2, 3

0 Off On 1 On Off

ESD CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.

Rev. 0 | Page 6 of 16

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