ANALOG DEVICES ADG1208, ADG1209 Service Manual

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Low Capacitance, 4-/8-Channel

FEATURES

<1 pC charge injection over full signal range
1 pF off capacitance
33 V supply range
120 Ω on resistance
Fully specified at ±15 V/+12 V
3 V logic compatible inputs
Rail-to-rail operation
Break-before-make switching action
Available in 16-lead TSSOP and 4 mm × 4 mm LFCSP_VQ
Typical power consumption < 0.03 μW

APPLICATIONS

Audio and video routing
Automatic test equipment
Data-acquisition systems
Battery-powered systems
Sample-and-hold systems
Communication systems

±15 V/+12 V iCMOS™ Multiplexers

ADG1208/ADG1209

FUNCTIONAL BLOCK DIAGRAMS

ADG1208

S1

S8

1-OF-8

DECODER

S1A

S4A

D

S1B

S4B

Figure 1.

ADG1209

1-OF-4

DECODER

A0 A1 E NA0 A1 A2 EN

DA

DB

05713-001

GENERAL DESCRIPTION

The ADG1208 and ADG1209 are monolithic, iCMOS analog
multiplexers comprising eight single channels and four differential
channels, respectively. The ADG1208 switches one of eight
inputs to a common output as determined by the 3-bit binary
address lines A0, A1, and A2. The ADG1209 switches one of
four differential inputs to a common differential output as
determined by the 2-bit binary address lines A0 and A1. An
EN input on both devices is used to enable or disable the device.
When disabled, all channels are switched off. When on, each
channel conducts equally well in both directions and has an
input signal range that extends to the supplies.

The iCMOS (industrial CMOS) modular manufacturing
process combines high voltage CMOS (complementary metal­oxide semiconductor) and bipolar technologies. It enables the
development of a wide range of high performance analog ICs
capable of 33 V operation in a footprint that no other generation
of high voltage parts has been able to achieve. Unlike analog ICs
using conventional CMOS processes, iCMOS components can
tolerate high supply voltages while providing increased
performance, dramatically lower power consumption, and
reduced package size.

The ultralow capacitance and exceptionally low charge injection
of these multiplexers make them ideal solutions for data
acquisition and sample-and-hold applications, where low glitch
and fast settling are required.

Figure 2 shows that there is
minimum charge injection over the entire signal range of the
device. iCMOS construction also ensures ultralow power
dissipation, making the parts ideally suited for portable and
battery powered instruments.

1.0
MUX (SOURCE TO DRAIN)

=25°C

T

A

0.9

0.8

0.7

0.6

0.5

0.4

0.3

CHARGE INJECTION (pC)

0.2

0.1

0

–15 15

Figure 2. Source to Drain Charge Injection vs. Source Voltage

VDD=+5V
V

= –5V

SS

–10 –5 0 5 10

VS(V)

VDD= +15V

= –15V

V

SS

VDD= +12V
V

=0V

SS

05713-051

Rev. 0

Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Anal og Devices for its use, nor for any infringements of patents or ot her
rights of third parties that may result from its use. Specifications subject to change without notice. No
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One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone] www.analog.com
Fax: [phone] © 2006 Analog Devices, Inc. All rights reserved.

ADG1208/ADG1209

TABLE OF CONTENTS

Features.............................................................................................. 1

Absolute Maximum Ratings ............................................................7

Applications....................................................................................... 1

Functional Block Diagrams............................................................. 1

General Description ......................................................................... 1

Revision History ............................................................................... 2

Specifications..................................................................................... 3

Dual Supply................................................................................... 3

Single Supply................................................................................. 5

REVISION HISTORY

4/06—Revision 0: Initial Version

ESD Caution...................................................................................7

Pin Configurations and Function Descriptions............................8

Typical Performance Characteristics........................................... 10

Terminology.................................................................................... 14

Test Circuits..................................................................................... 15

Outline Dimensions....................................................................... 17

Ordering Guide .......................................................................... 17

Rev. 0 | Page 2 of 20

ADG1208/ADG1209

SPECIFICATIONS

DUAL SUPPLY

VDD = +15 V ± 10%, VSS = –15 V ± 10%, GND = 0 V, unless otherwise noted.

Table 1.

−40ºC to

Parameter +25ºC

+85ºC

−40ºC to
+125ºC

ANALOG SWITCH

Analog Signal Range VSS to VDD V
On Resistance, RON 120 Ω typ VS = ±10 V, IS = −1 mA, see Figure 29
200 240 270 Ω max VDD = +13.5 V, VSS = −13.5 V
On Resistance Match Between Channels,

∆R

ON

3.5 Ω typ V

6 10 12 Ω max
On Resistance Flatness, R

(On) 20 Ω typ VS = −5 V, 0 V, +5 V, IS = −1 mA

FLAT

64 76 83 Ω max
LEAKAGE CURRENTS

Source Off Leakage, IS (Off) ±0.02 nA typ VD = ±10 V, VS = −10 V, see Figure 30
±0.1 ±0.6 ±1 nA max
Drain Off Leakage, ID (Off) ±0.02 nA typ VS = 1 V, 10 V; VD = 10 V, 1 V; see Figure 30

ADG1208 ±0.1 ±0.6 ±1 nA max
ADG1209 ±0.1 ±0.6 ±1 nA max

Channel On Leakage, ID, IS (On) ±0.02 nA typ VS = VD = ±10 V, see Figure 31

ADG1208 ±0.2 ±0.6 ±1 nA max
ADG1209 ±0.2 ±0.6 ±1 nA max

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V
Input Current, I

INL

2.0 V min

INH

0.8 V max

INL

or I

±0.005 μA max VIN = V

INH

±0.1 μA max
Digital Input Capacitance, CIN 2 pF typ

DYNAMIC CHARACTERISTICS2

Transition Time, t

80 ns typ RL = 300 Ω, CL = 35 pF

TRANSITION

130 165 185 ns max VS = 10 V, see Figure 32

tON (EN) 75 ns typ RL = 300 Ω, CL = 35 pF

95 105 115 ns max VS = 10 V, see Figure 34

t

(EN) 83 ns typ RL = 300 Ω, CL = 35 pF

OFF

100 125 140 ns max VS = 10 V, see Figure 34

Break-Before-Make Time Delay, t

25 ns typ RL = 300 Ω, CL = 35 pF

BBM

10 ns min VS1 = VS2 = 10 V, see Figure 33
Charge Injection 0.4 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF, see Figure 35
Off Isolation −85 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 36
Channel-to-Channel Crosstalk −85 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 38
Total Harmonic Distortion + Noise 0.15 % typ

−3 dB Bandwidth 550 MHz typ RL = 50 Ω, CL = 5 pF, see Figure 37
CS (Off) 1 pF typ f = 1 MHz, VS = 0 V

1.5 pF max f = 1 MHz, VS = 0 V
CD (Off) ADG1208 6 pF typ f = 1 MHz, VS = 0 V
7 pF max f = 1 MHz, VS = 0 V
CD (Off) ADG1209 3.5 pF typ f = 1 MHz, VS = 0 V

4.5 pF max f = 1 MHz, VS = 0 V

Rev. 0 | Page 3 of 20

1

Unit Test Conditions/Comments

= ±10 V, IS = −1 mA

S

or V

INH

INL

= 10 kΩ, 5 V rms, f = 20 Hz to 20 kHz,

R

L

see

Figure 39

ADG1208/ADG1209

−40ºC to

Parameter +25ºC

+85ºC

CD, CS (On) ADG1208 7 pF typ f = 1 MHz, VS = 0 V
8 pF max f = 1 MHz, VS = 0 V
CD, CS (On) ADG1209 5 pF typ f = 1 MHz, VS = 0 V
6 pF max f = 1 MHz, VS = 0 V

POWER REQUIREMENTS

IDD 0.002 μA typ Digital inputs = 0 V or VDD

1.0 μA max
IDD 220 μA typ Digital inputs = 5 V
320 μA max
ISS 0.002 μA typ Digital inputs = 0 V or VDD

1.0 μA max
ISS 0.002 μA typ Digital inputs = 5 V

1.0 μA max
VDD/VSS ±5/±16.5 V min/max |V

1

Temperature range is as follows: Y version: –40°C to +125°C.

2

Guaranteed by design, not subject to production test.

−40ºC to
+125ºC

Unit Test Conditions/Comments

VDD = +16.5 V, VSS = −16.5 V

| = |VSS|

DD

Rev. 0 | Page 4 of 20

ADG1208/ADG1209

SINGLE SUPPLY

VDD = 12 V ± 10%, VSS = 0 V, GND = 0 V, unless otherwise noted.1

Table 2.

−40ºC to

Parameter +25ºC

+85ºC

ANALOG SWITCH

Analog Signal Range 0 to VDD V
On Resistance, RON 300 Ω typ VS = 0 V to10 V, IS = −1 mA, see Figure 29
475 567 625 Ω max VDD = 10.8 V, VSS = 0 V
On Resistance Match Between Channels,

∆R

ON

5 Ω typ V

16 26 27 Ω max
On Resistance Flatness, R

(On) 60 Ω typ VS = 3 V, 6 V, 9 V; IS = −1 mA

FLAT

LEAKAGE CURRENTS VDD = 13.2 V

Source Off Leakage, IS (Off) ±0.02 nA typ VS = 1 V/10 V, VD = 10 V/1 V, see Figure 30
±0.1 ±0.6 ±1 nA max
Drain Off Leakage, ID (Off) ±0.02 nA typ VS = 1 V/10 V, VD = 10 V/1 V, see Figure 30

ADG1208 ±0.1 ±0.6 ±1 nA max
ADG1209 ±0.1 ±0.6 ±1 nA max

Channel On Leakage ID, IS (On) ±0.02 nA typ VS = VD = 1 V or 10 V; see Figure 31

ADG1208 ±0.2 ±0.6 ±1 nA max
ADG1209 ±0.2 ±0.6 ±1 nA max

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V
Input Current, I

INL

2.0 V min

INH

0.8 V max

INL

or I

±0.001

INH

±0.1 μA max VIN = V

Digital Input Capacitance, CIN 3 pF typ

DYNAMIC CHARACTERISTICS

Transition Time, t

TRANSITION

2

100 ns typ RL = 300 Ω, CL = 35 pF

170 210 235 VS = 8 V, see Figure 32

tON (EN) 90 ns typ RL = 300 Ω, CL = 35 pF
110 140 160 VS = 8 V, see Figure 34
t

(EN) 105 ns typ RL = 300 Ω, CL = 35 pF

OFF

130 155 175 VS = 8 V, see Figure 34

Break-Before-Make Time Delay, t

45 ns typ RL = 300 Ω, CL = 35 pF

BBM

20 ns min VS1 = V
Charge Injection −0.2 pC typ VS = 6 V, RS = 0 Ω, CL = 1 nF, see Figure 35
Off Isolation −85 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 36
Channel-to-Channel Crosstalk −85 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 38

−3 dB Bandwidth 450 MHz typ RL = 50 Ω, CL = 5 pF, see Figure 37
CS (Off) 1.2 pF typ f = 1 MHz, VS = 6 V

1.8 pF max f = 1 MHz, VS = 6 V
CD (Off) ADG1208 7.5 pF typ f = 1 MHz, VS = 6 V
9 pF max f = 1 MHz, VS = 6 V
CD (Off) ADG1209 4.5 pF typ f = 1 MHz, VS = 6 V

5.5 pF max f = 1 MHz, VS = 6 V
CD, CS (On) ADG1208 9 pF typ f = 1 MHz, VS = 6 V

10.5 pF max f = 1 MHz, VS = 6 V
CD, CS (On) ADG1209 6 pF typ f = 1 MHz, VS = 6 V

7.5 pF max f = 1 MHz, VS = 6 V

−40ºC to
+125ºC

Rev. 0 | Page 5 of 20

Unit Test Conditions/Comments

= 0 V to 10 V, IS = −1 mA

S

or V

INL

S2

INH

= 8 V, see Figure 33

ADG1208/ADG1209

−40ºC to

Parameter +25ºC

+85ºC

POWER REQUIREMENTS VDD = 13.2 V

IDD 0.002 μA typ Digital inputs = 0 V or VDD

1.0 μA max
IDD 220 μA typ Digital inputs = 5 V

330 μA max

VDD 5/16.5 V min/max VSS = 0 V, GND = 0 V

1

Temperature range is as follows: Y version: –40°C to +125°C.

2

Guaranteed by design, not subject to production test.

−40ºC to
+125ºC Unit Test Conditions/Comments

Rev. 0 | Page 6 of 20