ANALOG DEVICES ADG1206, ADG1207 Service Manual

S

查询ADG1206供应商

Low Capacitance, 16- and 8-Channel

FEATURES

<1 pC charge injection over full signal range

1.5 pF off capacitance
33 V supply range
120 Ω on resistance
Fully specified at ±15 V/+12 V
3 V logic-compatible inputs
Rail-to-rail operation
Break-before-make switching action
28-lead TSSOP and 32-lead, 5 mm × 5 mm LFCSP_VQ

APPLICATIONS

Audio and video routing
Automatic test equipment
Data acquisition systems
Battery-powered systems
Sample-and-hold systems
Communication systems

GENERAL DESCRIPTION

The ADG1206 and ADG1207 are monolithic iCMOS analog
multiplexers comprising sixteen single channels and eight
differential channels, respectively. The ADG1206 switches one
of sixteen inputs to a common output, as determined by the 4­bit binary address lines A0, A1, A2, and A3. The ADG1207
switches one of eight differential inputs to a common
differential output, as determined by the 3-bit binary address
lines A0, A1, and A2. An EN input on both devices is used to
enable or disable the device. When disabled, all channels are
switched off. When on, each channel conducts equally well in
both directions and has an input signal range that extends to the
supplies.

The iCMOS (industrial CMOS) modular manufacturing
process combines high voltage CMOS (complementary metal­oxide semiconductor) and bipolar technologies. It enables the
development of a wide range of high performance analog ICs
capable of 33 V operation in a footprint that no other generation
of high voltage parts has been able to achieve. Unlike analog ICs
using conventional CMOS processes, iCMOS components can
tolerate high supply voltages while providing increased perfor­mance, dramatically lower power consumption, and reduced
package size.

±15 V/+12 V iCMOS™ Multiplexers

ADG1206/ADG1207

FUNCTIONAL BLOCK DIAGRAMS

ADG1206

S1

16

1-OF-16

DECODER

A0 A1 A2 A3 EN

S1A

S8A

D

S1B

S8B

Figure 1.

The ultralow capacitance and exceptionally low charge injection
of these multiplexers make them ideal solutions for data
acquisition and sample-and-hold applications, where low glitch
and fast settling are required.

Figure 2 shows that there is
minimum charge injection over the entire signal range of the
device. iCMOS construction also ensures ultralow power
dissipation, making the parts ideally suited for portable and
battery-powered instruments.

1.0
MUX (SOURCE TO DRAIN)

T

= 25°C

A

0.9

0.8

0.7

0.6

0.5

0.4

0.3

CHARGE INJECTI ON (pC)

0.2

0.1

0

Figure 2. Source-to-Drain Charge Injection vs. Source Voltage

–10 –5 0 5 10

–15 15

= +5V

V

DD

= –5V

V

SS

VS (V)

ADG1207

1-OF-8

DECODER

A0 A1 A2 EN

= +15V

V

DD

= –15V

V

SS

V
V

DD
SS

= +12V
= 0V

DA

DB

06119-001

6119-002

Rev. 0

Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Anal og Devices for its use, nor for any infringements of patents or ot her
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone] www.analog.com
Fax: [phone] ©2006 Analog Devices, Inc. All rights reserved.

ADG1206/ADG1207

TABLE OF CONTENTS

Features.............................................................................................. 1

Absolute Maximum Ratings ............................................................7

Applications....................................................................................... 1

Functional Block Diagrams............................................................. 1

General Description ......................................................................... 1

Revision History ............................................................................... 2

Specifications..................................................................................... 3

Dual Supply................................................................................... 3

Single Supply................................................................................. 5

REVISION HISTORY

7/06—Revision 0: Initial Version

ESD Caution...................................................................................7

Pin Configurations and Function Descriptions............................8

Typical Performance Characteristics........................................... 12

Terminology.................................................................................... 16

Test Circuits..................................................................................... 17

Outline Dimensions....................................................................... 19

Ordering Guide .......................................................................... 19

Rev. 0 | Page 2 of 20

ADG1206/ADG1207

SPECIFICATIONS

DUAL SUPPLY

VDD = +15 V ± 10%, VSS = –15 V ± 10%, GND = 0 V, unless otherwise noted.

Table 1.

−40°C to

Parameter +25°C

+85°C

−40°C to
+125°C

ANALOG SWITCH

Analog Signal Range VSS to VDD V
On Resistance, RON 120 Ω typ VS = ±10 V, IS = −1 mA; see Figure 28
200 240 270 Ω max VDD = +13.5 V, VSS = −13.5 V
On Resistance Match Between

Channels, ∆R

ON

3.5 Ω typ V

6 10 12 Ω max
On Resistance Flatness, R

(On) 20 Ω typ VS = −5 V, 0 V, +5 V; IS = −1 mA

FLAT

64 76 83 Ω max
LEAKAGE CURRENTS

Source Off Leakage, IS (Off) ±0.03 nA typ

±0.2 ±0.6 ±1 nA max
Drain Off Leakage, ID (Off) ±0.05 nA typ VS = 1 V, 10 V; VD = 10 V, 1 V; see Figure 29

±0.2 ±0.6 ±2 nA max

Channel On Leakage, ID, IS (On) ±0.08 nA typ VS = VD = ±10 V; see Figure 30

±0.2 ±0.6 ±2 nA max

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V
Input Current, I

INL

2.0 V min

INH

0.8 V max

INL

or I

±0.005 μA typ VIN = V

INH

±0.1 μA max
Digital Input Capacitance, CIN 2 pF typ

DYNAMIC CHARACTERISTICS2

Transition Time, t

80 ns typ RL = 300 Ω, CL = 35 pF

TRANSITION

130 165 185 ns max VS = 10 V; see Figure 31

tON (EN) 75 ns typ RL = 300 Ω, CL = 35 pF

95 105 115 ns max VS = 10 V; see Figure 33

t

(EN) 85 ns typ RL = 300 Ω, CL = 35 pF

OFF

100 125 140 ns max VS = 10 V; see Figure 33

Break-Before-Make Time Delay, t

20 ns typ RL = 300 Ω, CL = 35 pF

BBM

10 ns min VS1 = VS2 = 10 V; see Figure 32
Charge Injection 0.5 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF; see Figure 34
Off Isolation −85 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 35
Channel-to-Channel Crosstalk −85 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 37
Total Harmonic Distortion + Noise 0.15 % typ

−3 dB Bandwidth ADG1206 280 MHz typ RL = 50 Ω, CL = 5 pF; see Figure 36

−3 dB Bandwidth ADG1207 490 MHz typ RL = 50 Ω, CL = 5 pF; see Figure 36
CS (Off) 1.5 pF typ f = 1 MHz, VS = 0 V
2 pF max f = 1 MHz, VS = 0 V
CD (Off) ADG1206 11 pF typ f = 1 MHz, VS = 0 V
12 pF max f = 1 MHz, VS = 0 V
CD (Off) ADG1207 7 pF typ f = 1 MHz, VS = 0 V
9 pF max f = 1 MHz, VS = 0 V

1

Unit Test Conditions/Comments

= ±10 V, IS = −1 mA

S

VD = ±10 V, VS = ∓10 V; see Figure 29

or V

INH

INL

= 10 kΩ, 5 V rms, f = 20 Hz to 20 kHz;

R

L

see

Figure 38

Rev. 0 | Page 3 of 20

ADG1206/ADG1207

−40°C to

Parameter +25°C

+85°C

CD, CS (On) ADG1206 13 pF typ f = 1 MHz, VS = 0 V
15 pF max f = 1 MHz, VS = 0 V
CD, CS (On) ADG1207 8 pF typ f = 1 MHz, VS = 0 V
10 pF max f = 1 MHz, VS = 0 V

POWER REQUIREMENTS VDD = +16.5 V, VSS = −16.5 V

IDD 0.002 μA typ Digital inputs = 0 V or VDD

1.0 μA max
IDD 260 μA typ Digital inputs = 5 V
420 μA max
ISS 0.002 μA typ Digital inputs = 0 V, 5 V, or VDD

1.0 μA max
VDD/VSS ±5/±16.5 V min/max GND = 0V

1

Temperature range for Y version is −40°C to +125°C.

2

Guaranteed by design, not subject to production test.

−40°C to
+125°C Unit Test Conditions/Comments

Rev. 0 | Page 4 of 20

ADG1206/ADG1207

SINGLE SUPPLY

VDD = 12 V ± 10%, VSS = 0 V, GND = 0 V, unless otherwise noted.1

Table 2.

−40°C to

Parameter +25°C

+85°C

ANALOG SWITCH

Analog Signal Range 0 to VDD V
On Resistance, RON 300 Ω typ VS = 0 V to10 V, IS = −1 mA; see Figure 28
475 567 625 Ω max VDD = 10.8 V, VSS = 0 V
On Resistance Match Between

Channels, ∆R

ON

5 Ω typ V

16 26 27 Ω max
On Resistance Flatness, R

(On) 60 Ω typ VS = 3 V, 6 V, 9 V; IS = −1 mA

FLAT

LEAKAGE CURRENTS VDD = 13.2 V

Source Off Leakage, IS (Off) ±0.02 nA typ VS = 1 V/10 V, VD = 10 V/1 V; see Figure 29
±0.2 ±0.6 ±1 nA max
Drain Off Leakage, ID (Off) ±0.05 nA typ VS = 1 V/10 V, VD = 10 V/1 V; see Figure 29

±0.2 ±0.6 ±2 nA max

Channel On Leakage, ID, IS (On) ±0.08 nA typ VS = VD = 1 V or 10 V; see Figure 30

±0.2 ±0.6 ±2 nA max

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V
Input Current, I

INL

2.0 V min

INH

0.8 V max

INL

or I

±0.001 μA typ

INH

±0.1 μA max VIN = V

Digital Input Capacitance, CIN 3 pF typ

DYNAMIC CHARACTERISTICS

Transition Time, t

TRANSITION

2

100 ns typ RL = 300 Ω, CL = 35 pF

140 175 200 ns max VS = 8 V; see Figure 31

tON (EN) 80 ns typ RL = 300 Ω, CL = 35 pF
100 120 130 ns max VS = 8 V; see Figure 33
t

(EN) 90 ns typ RL = 300 Ω, CL = 35 pF

OFF

110 130 155 ns max VS = 8 V; see Figure 33

Break-Before-Make Time Delay, t

25 ns typ RL = 300 Ω, CL = 35 pF

BBM

15 ns min VS1 = VS2 = 8 V; see Figure 32
Charge Injection 0.2 pC typ VS = 6 V, RS = 0 Ω, CL = 1 nF; see Figure 34
Off Isolation −85 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 35
Channel-to-Channel Crosstalk −85 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 37

−3 dB Bandwidth ADG1206 185 MHz typ RL = 50 Ω, CL = 5 pF; see Figure 36

−3 dB Bandwidth ADG1207 300 MHz typ RL = 50 Ω, CL = 5 pF; see Figure 36
CS (Off) 1.5 pF typ f = 1 MHz, VS = 6 V
2 pF max f = 1 MHz, VS = 6 V
CD (Off) ADG1206 13 pF typ f = 1 MHz, VS = 6 V
15 pF max f = 1 MHz, VS = 6 V
CD (Off) ADG1207 9 pF typ f = 1 MHz, VS = 6 V
11 pF max f = 1 MHz, VS = 6 V
CD, CS (On) ADG1206 15 pF typ f = 1 MHz, VS = 6 V
17 pF max f = 1 MHz, VS = 6 V
CD, CS (On) ADG1207 10 pF typ f = 1 MHz, VS = 6 V
12 pF max f = 1 MHz, VS = 6 V

−40°C to
+125°C

Unit Test Conditions/Comments

= 0 V to 10 V, IS = −1 mA

S

or V

INH

INL

Rev. 0 | Page 5 of 20

ADG1206/ADG1207

−40°C to

Parameter +25°C

+85°C

POWER REQUIREMENTS VDD = 13.2 V

IDD 0.002 μA typ Digital inputs = 0 V or VDD

1.0 μA max
IDD 260 μA typ Digital inputs = 5

420 μA max

VDD 5/16.5 V min/max VSS = 0 V, GND = 0 V

1

Temperature range for Y version is −40°C to +125°C.

2

Guaranteed by design, not subject to production test.

−40°C to
+125°C Unit Test Conditions/Comments

Rev. 0 | Page 6 of 20