Output frequency range: 35 MHz to 4400 MHz
Fractional-N synthesizer and integer-N synthesizer
Low phase noise VCO
Programmable divide-by-1/-2/-4/-8/-16/-32/-64 output
Typical jitter: 0.3 ps rms
Typical EVM at 2.1 GHz: 0.4%
Power supply: 3.0 V to 3.6 V
Logic compatibility: 1.8 V
Programmable dual-modulus prescaler of 4/5 or 8/9
Programmable output power level
RF output mute function
3-wire serial interface
Analog and digital lock detect
Switched bandwidth fast lock mode
Cycle slip reduction
The ADF4351 allows implementation of fractional-N or integer-N
phase-locked loop (PLL) frequency synthesizers when used with
an external loop filter and external reference frequency.
The ADF4351 has an integrated voltage controlled oscillator (VCO)
with a fundamental output frequency ranging from 2200 MHz to
4400 MHz. In addition, divide-by-1/-2/-4/-8/-16/-32/-64 circuits
allow the user to generate RF output frequencies as low as 35 MHz.
For applications that require isolation, the RF output stage can be
muted. The mute function is both pin- and software-controllable.
An auxiliary RF output is also available, which can be powered
down when not in use.
Control of all on-chip registers is through a simple 3-wire interface.
The device operates with a power supply ranging from 3.0 V to
3.6 V and can be powered down when not in use.
FUNCTIONAL BLOCK DIAGRAM
SDV
REF
IN
CLK
DATA
LE
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
Parameter Min Typ Max Unit Test Conditions/Comments
Minimum RF Output Power3 −4 dBm Programmable in 3 dB steps
Maximum RF Output Power3 5 dBm
Output Power Variation ±1 dB
Minimum VCO Tuning Voltage 0.5 V
NOISE CHARACTERISTICS
VCO Phase Noise Performance VCO noise is measured in open-loop conditions
−89 dBc/Hz 10 kHz offset from 2.2 GHz carrier
−114 dBc/Hz 100 kHz offset from 2.2 GHz carrier
−134 dBc/Hz 1 MHz offset from 2.2 GHz carrier
−148 dBc/Hz 5 MHz offset from 2.2 GHz carrier
−86 dBc/Hz 10 kHz offset from 3.3 GHz carrier
−111 dBc/Hz 100 kHz offset from 3.3 GHz carrier
−145 dBc/Hz 5 MHz offset from 3.3 GHz carrier
−83 dBc/Hz 10 kHz offset from 4.4 GHz carrier
−110 dBc/Hz 100 kHz offset from 4.4 GHz carrier
−131 dBc/Hz 1 MHz offset from 4.4 GHz carrier
Normalized Phase Noise Floor
)4
(PN
PLL loop BW = 500 kHz
−220 dBc/Hz ABP = 6 ns
−221 dBc/Hz ABP = 3 ns
Normalized 1/f Noise (PN
)5 10 kHz offset; normalized to 1 GHz
−118 dBc/Hz ABP = 3 ns
In-Band Phase Noise −100 dBc/Hz 3 kHz from 2111.28 MHz carrier
Integrated RMS Jitter6 0.27 ps
Spurious Signals Due to PFD
−80 dBc
Frequency
Level of Signal with RF Mute Enabled −40 dBm
1
ICP is internally modified to maintain constant loop gain over the frequency range.
2
TA = 25°C; AVDD = DVDD = V
3
Using 50 Ω resistors to V
main output.
4
The synthesizer phase noise floor is estimated by measuring the in-band phase noise at the output of the VCO and subtracting 20 log N (where N is the N divider
value) and 10 log f
5
The PLL phase noise is composed of flicker (1/f) noise plus the normalized PLL noise floor. The formula for calculating the 1/f noise contribution at an RF frequency (fRF)
and at a frequency offset (f) is given by PN = PN
6
f
= 122.88 MHz; f
REFIN
measured with an EVAL-ADF4351EB1Z and the Rohde & Schwarz FSUP signal source analyzer.
PFD
= 3.3 V; prescaler = 8/9; f
VCO
, into a 50 Ω load. Power measured with auxiliary RF output disabled. The current consumption of the auxiliary output is the same as for the
VCO
. To calculate i n-band phase noise performance as seen at the VCO output, use the following formula: PN
+ 10 log(10 kHz/f) + 20 log(fRF/1 GHz). Both the normalized phase noise floor and flicker noise are modeled in ADIsimPLL.
= 30.72 MHz; VCO frequency = 4222.56 MHz; RF
PFD
1_f
= 100 MHz; f
REFIN
= 25 MHz; fRF = 4.4 GHz.
PFD
= PN
SYNTH
= 2111.28 MHz; N = 137; loop BW = 60 kHz; ICP = 2.5 mA; low noise mode. The noise was
OUT
− 10 log(f
TOT
) − 20 log N.
PFD
Rev. 0 | Page 4 of 28
Data Sheet ADF4351
CLK
DATA
LE
LE
DB31 (MSB)DB30
DB1
(CONTROL BIT C2)
DB2
(CONTROL BIT C3)
DB0 (LSB)
(CONTROL BIT C1)
t
1
t
2
t
3
t
7
t
6
t
4
t
5
09800-002
TIMING CHARACTERISTICS
AVDD = DVDD = V
otherwise noted.
Table 2.
Parameter Limit Unit Description
t1 20 ns min LE setup time
t2 10 ns min DATA to CLK setup time
t3 10 ns min DATA to CLK hold time
t4 25 ns min CLK high duration
t5 25 ns min CLK low duration
t6 10 ns min CLK to LE setup time
t7 20 ns min LE pulse width
Timing Diagram
= SDVDD = VP = 3.3 V ± 10%; AGND = DGND = 0 V; 1.8 V and 3 V logic levels used; TA = T
VCO
MIN
to T
MAX
, unless
Figure 2. Timing Diagram
Rev. 0 | Page 5 of 28
ADF4351 Data Sheet
VCO
VCO
REFIN to GND1
−0.3 V to VDD + 0.3 V
32-Lead LFCSP (CP-32-2)
27.3
°C/W
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 3.
Parameter Rating
AVDD to GND1 −0.3 V to +3.9 V
AVDD to DVDD −0.3 V to +0.3 V
V
to GND1 −0.3 V to +3.9 V
V
to AVDD −0.3 V to +0.3 V
Digital I/O Voltage to GND1 −0.3 V to VDD + 0.3 V
Analog I/O Voltage to GND1 −0.3 V to VDD + 0.3 V
Operating Temperature Range −40°C to +85°C
Storage Temperature Range −65°C to +125°C
Maximum Junction Temperature 150°C
Reflow Soldering
Peak Temperature 260°C
Time at Peak Temperature 40 sec
1
GND = AGND = DGND = CP
GND
= SD
GND
= A
GNDVCO
= 0 V.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
This device is a high performance RF integrated circuit with an
ESD rating of <1.5 kV and is ESD sensitive. Proper precautions
should be taken for handling and assembly.
TRANSISTOR COUNT
The transistor count for the ADF4351 is 36,955 (CMOS) and
986 (bipolar).
THERMAL RESISTANCE
Thermal impedance (θJA) is specified for a device with the
exposed pad soldered to GND.
Table 4. Thermal Resistance
Package Type θJA Unit
ESD CAUTION
Rev. 0 | Page 6 of 28
Data Sheet ADF4351
1
CLK
2
DATA
3
LE
4
CE
5
SW
6
7
24
V
REF
23
V
COM
22
21
20
19
18
17
8
SDV
DD
ADF4351
TOP VIEW
(Not to S cale)
9
AGND
10
AV
DD
11
REF
IN
12
DGND13DV
DD
14
15
16
32
31
30
29
28
SD
GND
27
26
25
PIN 1
INDICATOR
V
P
CP
OUT
CP
GND
MUXOUT
R
SET
RF
OUT
A+
RF
OUT
B+
RF
OUT
B−
RF
OUT
A−
V
VCO
V
TUNE
A
GNDVCO
A
GNDVCO
TEM
P
PDB
RF
LD
A
GNDVCO
V
VCO
NOTES
1. THE LFCSP HAS AN EXPO S E D P AD THAT
MUST BE CONNE CTED TO GND.
09800-003
impedance CMOS input.
2
DATA
Serial Data Input. The serial data is loaded MSB first with the three LSBs as the control bits. This input is a high
TUNE
GND
OUT
DD
GNDVCO
VCO
20
V
Control Input to the VCO. This voltage determines the output frequency and is derived from filtering the CP
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
Figure 3. Pin Configuration
Table 5. Pin Function Descriptions
Pin No. Mnemonic Description
1 CLK Serial Clock Input. Data is clocked into the 32-bit shift register on the CLK rising edge. This input is a high
impedance CMOS input.
3 LE Load Enable. When LE goes high, the data stored in the 32-bit shift register is loaded into the register that is
selected by the three control bits. This input is a high impedance CMOS input.
4 CE Chip Enable. A logic low on this pin powers down the device and puts the charge pump into three-state mode.
A logic high on this pin powers up the device, depending on the status of the power-down bits.
5 SW Fast Lock Switch. A connection should be made from the loop filter to this pin when using the fast lock mode.
6 VP Charge Pump Power Supply. VP must have the same value as AVDD. Place decoupling capacitors to the ground
plane as close to this pin as possible.
7 CP
8 CP
Charge Pump Output. When enabled, this output provides ±ICP to the external loop filter. The output of the
OUT
loop filter is connected to V
to drive the internal VCO.
Charge Pump Ground. This output is the ground return pin for CP
9 AGND Analog Ground. Ground return pin for AVDD.
10 AVDD Analog Power Supply. This pin ranges from 3.0 V to 3.6 V. Place decoupling capacitors to the analog ground
11, 18, 21 A
12 RF
plane as close to this pin as possible. AV
VCO Analog Ground. Ground return pins for the VCO.
A+ VCO Output. The output level is programmable. The VCO fundamental output or a divided-down version is
OUT
must have the same value as DVDD.
available.
13 RF
A− Complementary VCO Output. The output level is programmable. The VCO fundamental output or a divided-
OUT
down version is available.
14 RF
15 RF
16, 17 V
19 TEMP Temperature Compensation Output. Place decoupling capacitors to the ground plane as close to this pin as
B+ Auxiliary VCO Output. The output level is programmable. The VCO fundamental output or a divided-down
OUT
B− Complementary Auxiliary VCO Output. The output level is programmable. The VCO fundamental output or a
OUT
Power Supply for the VCO. This pin ranges from 3.0 V to 3.6 V. Place decoupling capacitors to the analog
VCO
TUNE
version is available.
divided-down version is available.
ground plane as close to these pins as possible. V
possible.
output voltage.
Rev. 0 | Page 7 of 28
must have the same value as AVDD.
.
OUT
ADF4351 Data Sheet
CP
REF
29
REFIN
Reference Input. This CMOS input has a nominal threshold of AVDD/2 and a dc equivalent input resistance of
GND
Pin No. Mnemonic Description
22 R
23 V
24 V
25 LD Lock Detect Output Pin. A logic high output on this pin indicates PLL lock. A logic low output indicates loss
26 PDBRF RF Power-Down. A logic low on this pin mutes the RF outputs. This function is also software controllable.
27 DGND Digital Ground. Ground return pin for DVDD.
28 DVDD Digital Power Supply. DVDD must have the same value as AVDD. Place decoupling capacitors to the ground
30 MUXOUT Multiplexer Output. The multiplexer output allows the lock detect value, the N divider value, or the R counter
31 SD
32 SDVDD Power Supply Pin for the Digital Σ-Δ Modulator. SDVDD must have the same value as AVDD. Place decoupling
EP Exposed Pad Exposed Pad. The LFCSP has an exposed pad that must be connected to GND.
Connecting a resistor between this pin and ground sets the charge pump output current. The nominal voltage
SET
bias at the R
ICP = 25.5/R
pin is 0.55 V. The relationship between ICP and R
SET
SET
is as follows:
SET
where:
R
= 5.1 kΩ.
SET
= 5 mA.
I
Internal Compensation Node. Biased at half the tuning range. Place decoupling capacitors to the ground plane
COM
as close to this pin as possible.
Reference Voltage. Place decoupling capacitors to the ground plane as close to this pin as possible.
of PLL lock.
plane as close to this pin as possible.
100 kΩ. This input can be driven from a TTL or CMOS crystal oscillator, or it can be ac-coupled.
value to be accessed externally.
Digital Σ-Δ Modulator Ground. Ground return pin for the Σ-Δ modulator.
capacitors to the ground plane as close to this pin as possible.
Rev. 0 | Page 8 of 28
Data Sheet ADF4351
–160
–150
–140
–120
–100
–80
–130
–110
–90
–70
–60
–50
–40
1k10k100k1M10M
PHASE NOISE (dBc/Hz)
FREQUENCY ( Hz )
09800-104
–160
–150
–140
–120
–100
–80
–130
–110
–90
–70
–60
–50
–40
1k10k100k1M10M
PHASE NOISE (dBc/Hz)
FREQUENCY ( Hz )
09800-105
–160
–150
–140
–120
–100
–80
–130
–110
–90
–70
–60
–50
–40
1k10k100k1M10M
PHASE NOISE (dBc/Hz)
FREQUENCY ( Hz )
09800-106
–170
–160
–150
–140
–130
–120
–110
–100
–90
1k10k100k1M10M
PHASE NOISE (dBc/Hz)
FREQUENCY ( Hz )
DIV1
DIV2
DIV4
DIV8
DIV16
DIV32
DIV64
09800-107
–170
–160
–150
–140
–130
–120
–110
–100
–90
1k10k100k1M10M
PHASE NOISE (dBc/Hz)
FREQUENCY ( Hz )
DIV1
DIV2
DIV4
DIV8
DIV16
DIV32
DIV64
09800-108
–170
–160
–150
–140
–130
–120
–110
–100
–90
1k10k100k1M10M
PHASE NOISE (dBc/Hz)
FREQUENCY ( Hz )
DIV1
DIV2
DIV4
DIV8
DIV16
DIV32
DIV64
09800-109
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 4. Open-Loop VCO Phase Noise, 2.2 GHz
Figure 5. Open-Loop VCO Phase Noise, 3.3 GHz
Figure 7. Closed-Loop Phase Noise, Fundamental VCO and Dividers,