RF bandwidth to 13 GHz
High and low speed FMCW Ramps Generation
25-bit fixed modulus allows sub-hertz frequency resolution
PFD Frequencies up to 110MHz
Frequency and Phase modulation capability
Sawtooth and triangular waveforms generation
Parabolic ramp
Ramp superimposed with FSK
Ramp with 2 different sweep rates
Ramp Delay
Ramp Frequency Readback
Ramp Interruption
2.7 V to 3.3 V analog power supply
1.8 V digital power supply
Programmable charge pump currents
3-wire serial interface
Digital lock detect
Power-down mode
Cycle Slip Reduction for faster lock times
Switched Bandwidth Fast Lock Mode
APPLICATIONS
FMCW radar
Communications test equipment
ADF4159
GENERAL DESCRIPTION
The ADF4159 is a 13 GHz, fractional-N frequency synthesizer
with modulation and both fast and slow waveform generation
capability. It contains a 25-bit fixed modulus, allowing subhertz
resolution at 13 GHz. It consists of a low noise digital phase
frequency detector (PFD), a precision charge pump, and a
programmable reference divider. There is a sigma-delta (Σ-Δ)
based fractional interpolator to allow programmable fractionalN division. The INT and FRAC registers define an overall Ndivider as N = INT + (FRAC/225).
The ADF4159 can be used to implement frequency shift keying
(FSK) and phase shift keying (PSK) modulation. There are also
a number of frequency sweep modes available, which generate
various waveforms in the frequency domain, for example,
sawtooth and triangular waveforms. The ADF4159 features
cycle slip reduction circuitry, which leads to faster lock times,
without the need for modifications to the loop filter.
Control of all on-chip registers is via a simple 3-wire interface. The device operates with an analog power supply in the
range from 2.7 V to 3.3 V and digital power supply in the range
from 1.6 V to 2 V. It can be powered down when not in use.
FUNCTIONAL BLOCK DIAGRAM
ADF4159
REF
IN
HIGH Z
CE
TXDATA
CLK
DATA
LE
Rev. PrC
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
AVDD = 2.7 V to 3.3 V, DVDD = SDVDD = 1.8V; VP = AVDD, AGND = DGND = 0 V, TA = T
MIN
to T
, dBm referred to 50 Ω, unless
MAX
otherwise noted.
Table 1.
C Version1
Parameter Min Typ Max Unit Test Conditions/Comments
RF CHARACTERISTICS
RF Input Frequency (RFIN) 0.5 13 GHz −10 dBm min to 0 dBm max; for lower frequencies, ensure
slew rate (SR) > 400 V/µs
REFERENCE CHARACTERISTICS
REFIN Input Frequency 10 260 MHz For f < 10 MHz, use a dc-coupled CMOS-compatible
square wave, slew rate > 25 V/µsTBD MHz If an internal reference doubler is enabled
REFIN Input Sensitivity TBD V p-p Biased at 1.8/22
REFIN Input Capacitance 10 pF
REFIN Input Current ±100 µA
PHASE DETECTOR
Phase Detector Frequency3 110 MHz
CHARGE PUMP
ICP Sink/Source Programmable
High Value 5 mA With R
= 5.1 kΩ
SET
Low Value 312.5 µA
Absolute Accuracy 2.5 % With R
R
Range 2.7 10 kΩ
= 5.1 kΩ
SET
ICP Three-State Leakage Current 1 nA Sink and source current
Matching 2 % 0.5 V < VCP < VP – 0.5 V
ICP vs. VCP 2 % 0.5 V < VCP < VP – 0.5 V
ICP vs. Temperature 2 % VCP = VP/2
LOGIC INPUTS
V
, Input High Voltage 1.4 V
INH
V
, Input Low Voltage 0.6 V
I
, Input Current ±1 µA
CIN, Input Capacitance 10 pF
LOGIC OUTPUTS
VOH, Output High Voltage 1.4 V Open-drain output chosen; 1 kΩ pull-up to 1.8 V
VOH, Output High Voltage VDD − 0.4 V CMOS output chosen
IOH, Output High Current 100 µA
VOL, Output Low Voltage 0.4 V IOL = 500 µA
POWER SUPPLIES
AVDD 2.7 3.3 V
DVDD 1.6 1.8 2 V
SDVDD 1.6 1.8 2 V
VP 2.7 3.3 V
IDD 33 42 mA
Rev. PrC | Page 3 of 35
ADF4159 Preliminary Technical Data
1_f
t4t
ParameterMin Typ Max Unit Test Conditions/Comments
NOISE CHARACTERISTICS
Operating temperature for C version: −40°C to +125°C.
2
AC-coupling ensures 1.8/2 bias.
3
Guaranteed by design. Sample tested to ensure compliance.
4
This figure can be used to calculate phase noise for any application. Use the formula TBD + 10 log(f
at the VCO output.
5
The PLL phase noise is composed of 1/f (flicker) noise plus the normalized PLL noise floor. The formula for calculating the 1/f noise contribution at an RF frequency, FRF,
and at an offset frequency, f, is given by PN = P
6
The phase noise is measured with the EVAL-ADF4159EB1Z and the Agilent E5052A phase noise system.
AVDD = 2.7 V to 3.3 V; DVDD = SDVDD = 1.8V; VP = AVDD; AGND = DGND = SDGND = 0V; TA = T
unless otherwise noted.
Table 2. Write Timing
Parameter Limit at T
t1 20 ns min LE setup time
t2 10 ns min DATA to CLK setup time
t3 10 ns min DATA to CLK hold time
t4 25 ns min CLK high duration
t5 25 ns min CLK low duration
t6 10 ns min CLK to LE setup time
t7 20 ns min LE pulse width
MIN
to T
MAX
C Version1
+ 10 log(10 kHz/f) + 20 log(FRF/1 GHz). Both the normalized phase noise floor and flicker noise are modeled in ADIsimPLL.
1_f
) + 20 logN to calculate in-band phase noise performance as seen
PFD
to T
MIN
, dBm referred to 50 Ω,
MAX
(C Version) Unit Test Conditions/Comments
Write Timing Diagram
CLK
DATA
LE
LE
t
2
DB31 (MSB)DB30
t
1
t
3
DB2
(CONTROL BIT C3)
Figure 2. Write Timing Diagram
Rev. PrC | Page 4 of 35
5
DB1
(CONTROL BIT C2)
DB0 (LSB)
(CONTROL BIT C1)
t
7
t
6
08728-026
Preliminary Technical Data ADF4159
DATA
Table 3. Read Timing
Parameter Limit at T
t1 20 ns min TX
t2 10 ns min DATA (on MUXOUT) to CLK setup time
t3 10 ns min DATA (on MUXOUT) to CLK hold time
t4 25 ns min CLK high duration
t5 25 ns min CLK low duration
t6 10 ns min CLK to LE setup time
Read Timing Diagram
TXDATA
CLK
to T
MIN
(C Version) Unit Test Conditions/Comments
MAX
setup time
t
1
t
4
t
5
MUXOUT
LE
t
2
DB36DB35
t
3
Figure 3. Read Timing Diagram
DB1DB2
DB0
t
6
08728-026
Rev. PrC | Page 5 of 35
ADF4159 Preliminary Technical Data
ABSOLUTE MAXIMUM RATINGS
AVDD to GND −0.3 V to +4 V
DVDD to GND −0.3 V to +2.4 V
VP to GND −0.3 V to +4 V
VP to AVDD −0.3 V to +0.6 V
Digital I/O Voltage to GND −0.3 V to VDD + 0.3 V
Analog I/O Voltage to GND −0.3 V to VDD + 0.3 V
REFIN, RFIN to GND −0.3 V to VDD + 0.3 V
Operating Temperature Range
Industrial (C Version) −40°C to +125°C
Storage Temperature Range −65°C to +125°C
Maximum Junction Temperature 150°C
LFCSP θJA Thermal Impedance
(Paddle Soldered)
Reflow Soldering
Peak Temperature 260°C
Time at Peak Temperature 40 sec
30.4°C/W
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
ESD CAUTION
Rev. PrC | Page 6 of 35
Preliminary Technical Data ADF4159
T
DD
5.25
PIN CONFIGURATION AND PIN FUNCTION DESCRIPTIONS
SETVP
CP24
R
232221
PIN1
1
CPGND
AGND 2
AGND
RFINB 4
RFINA 5
AV
DD
NOTES
1. THE LFCSP HAS AN EXPOSED PADDLE
THAT MUST BE CONNECTED TO GND.
3
6
IDENTIFIER
ADF4159
TOPVIEW
(Not to Scale)
789
IN
DD
DD
REF
AV
AV
DV
SW2
SW1
20
19
18
SDV
DD
17
MUXOU
16
LE
15
DATA
14
CLK
CE13
10
11
12
DATA
DGND
TX
SDGND
Figure 4. LFCSP Pin Configuration
Table 5. Pin Function Descriptions
Pin No. Mnemonic Description
1 CPGND Charge Pump Ground. This is the ground return path for the charge pump.
2, 3 AGND Analog Ground. This is the ground return path of the prescaler.
4 RFINB Complementary Input to the RF Prescaler. Decouple this point to the ground plane with a small bypass capacitor,
typically 100 pF.
5 RFINA Input to the RF Prescaler. This small-signal input is normally ac-coupled from the VCO.
6, 7, 8 AVDD Positive Power Supply for the RF Section. Place decoupling capacitors to the ground plane as close as possible to this
pin.
9 REFIN Reference Input. This is a CMOS input with a nominal threshold of VDD/2 and an equivalent input resistance of 100 kΩ.
It can be driven from a TTL or CMOS crystal oscillator, or it can be ac-coupled.
10 DGND Digital Ground.
11 SDGND Digital Σ-Δ Modulator Ground. Ground return path for the Σ-Δ modulator.
12 TX
13 CE Chip Enable. A logic low on this pin powers down the device and puts the charge pump output into three-state mode.
14 CLK Serial Clock Input. This serial clock is used to clock in the serial data to the registers. The data is latched into the shift
15 DATA Serial Data Input. The serial data is loaded MSB first with the three LSBs being the control bits. This input is a high
16 LE Load Enable, CMOS Input. When LE is high, the data stored in the shift registers is loaded into one of the eight latches,
17 MUXOUT Multiplexer Output. This pin allows either the RF lock detect, the scaled RF, or the scaled reference frequency to be
18 SDVDD Power Supply Pin for the Digital Σ-Δ Modulator. This pin should be 1.8V. Place decoupling capacitors to the ground
19 DVDD Positive Power Supply for the Digital Section. Place decoupling capacitors to the digital ground plane as close as
20 , 21 SW1, SW2 Switches for Fast Lock.
22 VP Charge Pump Power Supply. This should be greater than or equal to VDD. The max value of VP is 3.3V.
23 R
24 CP Charge Pump Output. When enabled, this provides ±ICP to the external loop filter, which in turn drives the external VCO.
25 EPAD Exposed Paddle. The LFCSP has an exposed paddle that must be connected to GND.
Tx Data Pin. Provide data to be transmitted in FSK or PSK mode on this pin.
DATA
register on the CLK rising edge. This input is a high impedance CMOS input.
impedance CMOS input.
with the latch being selected using the control bits.
accessed externally.
plane as close as possible to this pin.
possible to this pin. DVDD must be 1.8V.
Connecting a resistor between this pin and ground sets the maximum charge pump output current. The relationship
SET
between ICP and R
I
CPmax
R
SET
is
SET
where:
I
= 5 mA.
CPmax
R
= 5.1 kΩ.
SET
Rev. PrC | Page 7 of 35
ADF4159 Preliminary Technical Data
TYPICAL PERFORMANCE CHARACTERISTICS
TBD
Figure 5.
TBD
TBD
Figure 8
TBD
Figure 6
TBD
Figure 7.
Rev. PrC | Page 8 of 35
TBD
Figure 9.
Figure 10
Preliminary Technical Data ADF4159
POWER-DOWN
08728-016
REFERENCE INPUT SECTION
The reference input stage is shown in Figure 11. SW1 and SW2
are normally closed switches. SW3 is normally open. When
power-down is initiated, SW3 is closed and SW1 and SW2 are
opened. This ensures that there is no loading of the REFIN pin
on power-down.
CONTROL
25-BIT FIXED MODULUS
The ADF4159 has a 25-bit fixed modulus. This allows output
frequencies to be spaced with a resolution of
f
= f
RES
where f
(PFD). For example, with a PFD frequency of 10 MHz,
frequency steps of 0.298 Hz are possible.
/225 (1)
PFD
is the frequency of the phase frequency detector
PFD
100kΩ
NC
REF
IN
NC
SW2
SW1
SW3
NO
Figure 11. Reference Input Stage
BUFFER
TO R-COUNTER
08728-027
RF INPUT STAGE
The RF input stage is shown in Figure 12. It is followed by a
2-stage limiting amplifier to generate the current-mode logic
(CML) clock levels needed for the prescaler.
1.6V
2kΩ2kΩ
AV
DD
AGND
RFINA
RFINB
BIAS
GENERATOR
Figure 12. RF Input Stage
INT, FRAC, AND R RELATIONSHIP
The INT and FRAC values, in conjunction with the R-counter,
make it possible to generate output frequencies that are spaced
by fractions of the phase frequency detector (PFD). The RF
VCO frequency (RF
RF
= f
OUT
PFD
where:
RF
is the output frequency of external voltage controlled
OUT
oscillator (VCO).
INT is the preset divide ratio of binary 12-bit counter (23 to 4095).
FRAC is the numerator of the fractional division (0 to 225 − 1).
f
= REFIN × [(1 + D)/(R × (1 + T))] (3)
PFD
where:
REFIN is the reference input frequency.
D is the REFIN doubler bit (0 or 1).
T is the REFIN divide-by-2 bit (0 or 1).
R is the preset divide ratio of the binary, 5-bit, programmable
reference counter (1 to 32).
FROM RF
INPUT STAGE
08728-015
) equation is
OUT
× (INT + (FRAC/225)) (2)
RF N-DIVIDER
N-COUNTER
N = INT + FRAC/MOD
THIRD-ORDER
FRACTIONAL
INTERPOLATOR
TO PFD
RF INT DIVIDER
The RF INT CMOS counter allows a division ratio in the PLL
feedback counter. Division ratios from 23 to 4095 are allowed.
Rev. PrC | Page 9 of 35
INT
REG
Figure 13. RF N-Divider
MOD
REG
FRAC
VALUE
R-COUNTER
The 5-bit R-counter allows the input reference frequency
(REFIN) to be divided down to produce the reference clock
to the PFD. Division ratios from 1 to 32 are allowed.
ADF4159 Preliminary Technical Data
+IN
MUXOUT
PHASE FREQUENCY DETECTOR (PFD) AND
CHARGE PUMP
The PFD takes inputs from the R-counter and N-counter and
produces an output proportional to the phase and frequency
difference between them. Figure 14 shows a simplified schematic of the PFD. The PFD includes a fixed delay element that
sets the width of the antibacklash pulse, which is typically 3 ns.
This pulse ensures that there is no dead zone in the PFD transfer
function and gives a consistent reference spur level.
HIGH
HIGH
–IN
UP
Q1D1
U1
CLR1
DELAY
CLR2
DOWN
Q2D2
U2
Figure 14. PFD Simplified Schematic
U3
CHARGE
PUMP
CP
08728-017
MUXOUT AND LOCK DETECT
The output multiplexer on the ADF4159 allows the user
to access various internal points on the chip. The state of
MUXOUT is controlled by the M4, M3, M2, and M1 bits
(see Figure 18). Figure 15 shows the MUXOUT section in
block diagram form.
DV
THREE-STATE OUTPUT
DV
DD
DGND
R DIVIDER OUTPUT
N DIVIDER OUTPUT
DIGITAL LOCK DETECT
CLK DIVIDER OUTPUT
R DIVIDER/2
N DIVIDER/2
READBACK
MUX
Figure 15. MUXOUT Schematic
CONTROL
DD
DGND
INPUT SHIFT REGISTERS
The ADF4159 digital section includes a 5-bit RF R-counter,
a 12-bit RF N-counter, and a 25-bit FRAC counter. Data is
clocked into the 32-bit shift register on each rising edge of
CLK. The data is clocked in MSB first. Data is transferred
from the shift register to one of eight latches on the rising edge
of LE. The destination latch is determined by the state of the
three control bits (C3, C2, and C1) in the shift register. These
are the three LSBs—DB2, DB1, and DB0—as shown in Figure 2.
The truth table for these bits is shown in Table 6. Figure 16 and
Figure 17 show a summary of how the latches are programmed.
PROGRAM MODES
Table 6 and Figure 18 through Figure 25 show how to set up
the program modes in the ADF4159.
Several settings in the ADF4159 are double buffered. These
include the LSB fractional value, R-counter value, reference
doubler, current setting, and RDIV2. This means that two
events must occur before the part uses a new value for any
of the double-buffered settings. First, the new value is latched
into the device by writing to the appropriate register. Second,
a new write must be performed on Register R0.
For example, updating the fractional value can involve a write
to the 13 LSB bits in R1 and the 12 MSB bits in R0. R1 should
be written to first, followed by the write to R0. The frequency
change begins after the write to R0. Double buffering ensures
that the bits written to in R1 do not take effect until after
the write to R0.