The ADF411x family of frequency synthesizers can be used to
implement local oscillators (LO) in the upconversion and
downconversion sections of wireless receivers and transmitters.
They consist of a low noise digital phase frequency detector
(PFD), a precision charge pump, a programmable reference
divider, programmable A and B counters, and a dual-modulus
prescaler (P/P + 1). The A (5-bit) and B (13-bit) counters, in
conjunction with the dual-modulus prescaler (P/P + 1),
implement an N divider (N = BP + A). In addition, the 14-bit
reference counter (R counter) allows selectable REF
at the PFD input. A complete phase-locked loop (PLL) can be
implemented if the synthesizer is used with an external loop
filter and voltage controlled oscillator (VCO).
All of the on-chip registers are controlled via a simple 3-wire
interface. The devices operate with a power supply ranging
from 2.7 V to 5.5 V and can be powered down when not in use.
FUNCTIONAL BLOCK DIAGRAM
DV
DD
DD
CPGND
P
frequencies
IN
ADF4116/ADF4117/ADF4118
REF
IN
CLK
DATA
LE
A
RF
IN
RF
B
IN
Rev. D
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Anal og Devices for its use, nor for any infringements of patents or ot her
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
Changes to Specifications.................................................................3
Changes to Ordering Guide.......................................................... 25
3/01—Rev. 0 to Rev. A
4/00—Rev. 0: Initial Version
Rev. D | Page 2 of 28
ADF4116/ADF4117/ADF4118
SPECIFICATIONS
AVDD = DVDD = 3 V ± 10%, 5 V ± 10%; AVDD ≤ VP ≤ 6.0 V; AGND = DGND = CPGND = 0 V; TA = T
noted; dBm referred to 50 Ω.
MIN
to T
, unless otherwise
MAX
Table 1.
Parameter B Version
1
Y Version2Unit Test Conditions/Comments
RF CHARACTERISTICS
RF Input Sensitivity −15 to 0 −10 to 0 dBm min to max AV
−10 to 0 −10 to 0 dBm min to max AV
RF Input Frequency
= 3 V
DD
= 5 V
DD
Figure 26 for input circuit
See
ADF4116 80 to 550 MHz min to max
45 to 550 MHz min to max
Input level = −8 dBm; for lower frequencies,
ensure slew rate (SR) > 36 V/μs
ADF4117 0.1 to 1.2 GHz min to max
ADF4118 0.1 to 3.0 0.1 to 3.0 GHz min to max Input level = −10 dBm
0.2 to 3.0 GHz min to max Input level = −15 dBm
, DV
, DV
DD
DD
= 3 V
= 5 V
Maximum Allowable Prescaler
Output Frequency
3
165
200
165
200
MHz max
MHz max
AV
AV
DD
DD
REFIN CHARACTERISTICS
Reference Input Frequency 5 to 100 5 to 100 MHz min to max For f < 5 MHz, ensure SR > 100 V/μs
Reference Input Sensitivity
4, 5
0.4 to AVDD 0.4 to AVDD V p-p min to max AVDD = 3.3 V, biased at AVDD/2
0.7 to AVDD 0.7 to AVDD V p-p min to max For f ≥ 10 MHz, AVDD = 5 V, biased at AVDD/2
REFIN Input Capacitance 10 10 pF max
REFIN Input Current ±100 ±100 μA max
PHASE DETECTOR FREQUENCY5 55 55 MHz max
CHARGE PUMP
I
Sink/Source
CP
High Value 1 1 mA typ
Low Value 250 250 μA typ
Absolute Accuracy 2.5 2.5 % typ
ICP Three-State Leakage Current 3 25 nA max
1 16 nA typ
Sink and Source Current Matching 3 3 % typ 0.5 V ≤ VCP ≤ VP − 0.5
ICP vs. VCP 2 2 % typ 0.5 V ≤ VCP ≤ VP − 0.5
ICP vs. Temperature 2 2 % typ VCP = VP/2
LOGIC INPUTS
V
, Input High Voltage 0.8 × DVDD 0.8 × DVDD V min
INH
V
, Input Low Voltage 0.2 × DVDD 0.2 × DVDD V max
INL
I
, Input Current ±1 ± 1 μA max
INH/IINL
CIN, Input Capacitance 10 10 pF max
Reference Input Current ±100 ± 100 μA max
LOGIC OUTPUTS
VOH, Output High Voltage DVDD − 0.4 DVDD − 0.4 V min IOH = 500 μA
VOL, Output Low Voltage 0.4 0.4 V max IOL = 500 μA
Rev. D | Page 3 of 28
ADF4116/ADF4117/ADF4118
Parameter B Version
1
Y Version2Unit Test Conditions/Comments
POWER SUPPLIES
AVDD 2.7 to 5.5 2.7 to 5.5 V min to V max
DVDD AVDD AVDD
VP AVDD to 6.0 AVDD to 6.0 V min to V max AVDD ≤ VP ≤ 6.0 V
IDD (AIDD + DIDD)
6
ADF4116 5.5 mA max 4.5 mA typical
ADF4117 5.5 mA max 4.5 mA typical
ADF4118 7.5 7.5 mA max 6.5 mA typical
IP 0.4 0.4 mA max TA = 25°C
Low-Power Sleep Mode 1 1 μA typ
NOISE CHARACTERISTICS
ADF4118 Normalized Phase Noise
7
Floor
−213 −213 dBc/Hz typ
Phase Noise Performance8 @ VCO output
ADF4116 540 MHz Output
ADF4117 900 MHz Output
ADF4118 900 MHz Output
9
10
10
−89 −89 dBc/Hz typ @ 1 kHz offset and 200 kHz PFD frequency
−87 −87 dBc/Hz typ @ 1 kHz offset and 200 kHz PFD frequency
−90 −90 dBc/Hz typ @ 1 kHz offset and 200 kHz PFD frequency
ADF4117 836 MHz Output11 −78 −78 dBc/Hz typ @ 300 Hz offset and 30 kHz PFD frequency
ADF4118 1750 MHz Output12 −85 −85 dBc/Hz typ @ 1 kHz offset and 200 kHz PFD frequency
ADF4118 1750 MHz Output13 −65 −65 dBc/Hz typ @ 200 Hz offset and 10 kHz PFD frequency
ADF4118 1960 MHz Output14 −84 −84 dBc/Hz typ @ 1 kHz offset and 200 kHz PFD frequency
−88/−99 −88/−99 dBc typ @ 200 kHz/400 kHz and 200 kHz PFD frequency
−90/−104 −90/−104 dBc typ @ 200 kHz/400 kHz and 200 kHz PFD frequency
−91/−100 −91/−100 dBc typ @ 200 kHz/400 kHz and 200 kHz PFD frequency
ADF4117 836 MHz Output11 −80/−84 −80/−84 dBc typ @ 30 kHz/60 kHz and 30 kHz PFD frequency
ADF4118 1750 MHz Output
ADF4118 1750 MHz Output
12
13
−88/−90 −88/−90 dBc typ @ 200 kHz/400 kHz and 200 kHz PFD frequency
−65/−73 −65/−73 dBc typ @ 10 kHz/20 kHz and 10 kHz PFD frequency
ADF4118 1960 MHz Output14 −80/−86 −80/−86 dBc typ @ 200 kHz/400 kHz and 200 kHz PFD frequency
1
Operating temperature range for the B version is −40°C to +85°C.
2
Operating temperature range for the Y version is −40°C to +125°C.
3
This is the maximum operating frequency of the CMOS counters.
4
AC coupling ensures AVDD/2 bias. See Figure 35 for typical circuit.
5
Guaranteed by design.
6
TA = 25°C; AVDD = DVDD = 3 V; RFIN for ADF4116 = 540 MHz; RFIN for ADF4117, ADF4118 = 900 MHz.
7
The synthesizer phase noise floor is estimated by measuring the in-band phase noise at the output of the VCO, PN
: PN
= PN
divider value) and 10logF
8
The phase noise is measured with the EVAL-ADF411xEB and the HP8562E Spectrum Analyzer. The spectrum analyzer provides the REFIN for the synthesizer
= 10 MHz @ 0 dBm).
(f
REFOUT
9
f
= 10 MHz; f
REFIN
10
f
= 10 MHz; f
REFIN
11
f
= 10 MHz; f
REFIN
12
f
= 10 MHz; f
REFIN
13
f
= 10 MHz; f
REFIN
14
f
= 10 MHz; f
REFIN
PFD
SYNTH
= 200 kHz; offset frequency = 1 kHz; fRF = 540 MHz; N = 2700; loop bandwidth = 20 kHz.
PFD
= 200 kHz; offset frequency = 1 kHz; fRF = 900 MHz; N = 4500; loop bandwidth = 20 kHz.
PFD
= 30 kHz; offset frequency = 300 Hz; fRF = 836 MHz; N = 27867; loop bandwidth = 3 kHz.
PFD
= 200 kHz; offset frequency = 1 kHz; fRF = 1750 MHz; N = 8750; loop bandwidth = 20 kHz.
PFD
= 10 kHz; offset frequency = 200 Hz; fRF = 1750 MHz; N = 175000; loop bandwidth = 1 kHz.
PFD
= 200 kHz; offset frequency = 1 kHz; fRF = 1960 MHz; N = 9800; loop bandwidth = 20 kHz.
PFD
– 10logF
TOT
– 20logN.
PFD
, and subtracting 20logN (where N is the N
TOT
Rev. D | Page 4 of 28
ADF4116/ADF4117/ADF4118
A
TIMING CHARACTERISTICS
AVDD = DVDD = 3 V ± 10%, 5 V ± 10%; AVDD ≤ VP < 6.0 V; AGND = DGND = CPGND = 0 V; TA = T
Guaranteed by design, but not production tested.
Table 2.
Parameter Limit at T
MIN
to T
(B, Y Version) Unit Test Conditions/Comments
MAX
t1 10 ns min DATA to CLK setup time
t2 10 ns min DATA to CLK hold time
t3 25 ns min CLK high duration
t4 25 ns min CLK low duration
t5 10 ns min CLK to LE setup time
t6 20 ns min LE pulse width
t
4
CLK
t
3
MIN
to T
, unless otherwise noted.
MAX
t
2
DB1
(CONTROL BIT C2)
DB0 (LSB)
(CONTROL BIT C1)
t
5
t
6
00392-002
DAT
t
1
DB20 (MSB)DB19DB2
LE
LE
Figure 2. Timing Diagram
Rev. D | Page 5 of 28
ADF4116/ADF4117/ADF4118
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 3.
Parameter Rating
AVDD to GND1 −0.3 V to +7 V
AVDD to DVDD −0.3 V to +0.3 V
VP to GND1 −0.3 V to +7 V
VP to AVDD −0.3 V to +5.5 V
Digital I/O Voltage to GND1 −0.3 V to VDD + 0.3 V
Analog I/O Voltage to GND1 −0.3 V to VP + 0.3 V
REFIN, RFINA, RFINB to GND1 −0.3 V to VDD + 0.3 V
RFINA to RFINB ±320 mV
Operating Temperature Range
Industrial (B Version) −40°C to +85°C
Extended (Y Version) −40°C to +125°C
Storage Temperature Range −65°C to +150°C
Maximum Junction Temperature 150°C
TSSOP θJA Thermal Impedance 112°C/W
Reflow Soldering
Peak Temperature 260°C
Time at Peak Temperature 40 sec
Transistor Count
CMOS 6425
Bipolar 303
1
GND = AGND = DGND = 0 V.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
This device is a high performance RF integrated circuit with an
ESD rating of <2 kV, and it is ESD sensitive. Proper precautions
should be taken for handling and assembly.
ESD CAUTION
Rev. D | Page 6 of 28
ADF4116/ADF4117/ADF4118
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
FL
CP
CPGND
AGND
RF
IN
RFINA
AV
REF
O
B
DD
IN
1
2
ADF4116/
3
ADF4117/
4
ADF4118
5
TOP VIEW
(Not to Scale)
6
7
8
16
15
14
13
12
11
10
9
V
P
DV
DD
MUXOUT
LE
DATA
CLK
CE
DGND
00392-003
Figure 3. Pin Configuration
Table 4. Pin Function Descriptions
Pin No. Mnemonic Description
1 FLO
Fast Lock Switch Output. This can be used to switch an external resistor to change the loop filter bandwidth
and speed up locking the PLL.
2 CP
Charge Pump Output. When enabled, this provides the ± I
to the external loop filter, which in turn drives the
CP
external VCO.
3 CPGND Charge Pump Ground. This is the ground return path for the charge pump.
4 AGND Analog Ground. This is the ground return path for the prescaler.
5 RFINB
Complementary Input to the RF Prescaler. This point should be decoupled to the ground plane with a small
bypass capacitor, typically 100 pF. See
Figure 26.
6 RFINA Input to the RF Prescaler. This small signal input is ac-coupled from the VCO.
7 AVDD
8 REFIN
Analog Power Supply. This can range from 2.7 V to 5.5 V. Decoupling capacitors to the analog ground plane
should be placed as close as possible to this pin. AV
Reference Input. This is a CMOS input with a nominal threshold of V
See
Figure 25. The oscillator input can be driven from a TTL or CMOS crystal oscillator, or it can be ac-coupled.
must have the same value as DVDD.
DD
/2 and an equivalent input resistance of 100 kΩ.
DD
9 DGND Digital Ground.
10 CE
Chip Enable. A logic low on this pin powers down the device and puts the charge pump output into three-state
mode. Taking the pin high powers up the device depending on the status of the power-down bit F2.
11 CLK
Serial Clock Input. This serial clock is used to clock in the serial data to the registers. The data is latched into the
21-bit shift register on the CLK rising edge. This input is a high impedance CMOS input.
12 DATA
Serial Data Input. The serial data is loaded MSB first with the two LSBs as the control bits. This input is a high
impedance CMOS input.
13 LE
Load Enable, CMOS Input. When LE goes high, the data stored in the shift registers is loaded into one of the four
latches, the latch being selected using the control bits.
14 MUXOUT
This multiplexer output allows either the lock detect, the scaled RF, or the scaled reference frequency to be
accessed externally.
15 DVDD
Digital Power Supply. This can range from 2.7 V to 5.5 V. Decoupling capacitors to the digital ground plane (1 μF, 1 nF)
should be placed as close as possible to this pin. For best performance, the 1 μF capacitor should be placed within 2 mm
of the pin. The placing of the 1 nF capacitor is less critical, but should still be within 5 mm of the pin.
must have the same value as AVDD.
DV
DD
16 VP
Charge Pump Power Supply. This should be greater than or equal to V
. In systems where VDD is 3 V, this supply can
DD
be set to 6 V and used to drive a VCO with a tuning range of up to 6 V.
Rev. D | Page 7 of 28
ADF4116/ADF4117/ADF4118
TYPICAL PERFORMANCE CHARACTERISTICS
PARAM-TYPE DATA-F ORMAT KEYWORD IMPEDANCE-
FREQUNIT
GHzSMAR50
FREQ MagS11 AngS11
0.050.89207–2.0571
0.100.8886–4.4427
0.150.89022–6.3212
0.200.96323–2.1393
0.250.90566–12.13
0.300.90307–13.52
0.350.89318–15.746
0.400.89806–18.056
0.450.89565–19.693
0.500.88538–22.246
0.550.89699–24.336
0.600.89927–25.948
0.650.87797–28.457
0.700.90765–29.735
0.750.88526–31.879
0.800.81267–32.681
0.850.90357–31.522
0.900.92954–34.222
FREQ MagS11 AngS11
0.950.92087–36.961
1.000.93788–39.343
1.050.9512–40.134
1.100.93458–43.747
1.150.94782–44.393
1.200.96875–46.937
1.250.92216–49.6
1.300.93755–51.884
1.350.96178–51.21
1.400.94354–53.55
1.450.95189–56.786
1.500.97647–58.781
1.550.98619–60.545
1.600.95459–61.43
1.650.97945–61.241
1.700.98864–64.051
1.750.97399–66.19
1.800.97216–63.775
OHMS
–40
–50
–60
–70
–80
–90
–100
–110
PHASE NOISE (dBc/Hz)
–120
–130
–140
00392-004
100HzFREQUENCY OF FSET F ROM 900MHz CARRIER1MHz
RL= –40dBc/Hz10dB/DIVI SIONRMS NOISE = 0.64°
0.64° rms
00392-007
Figure 4. S-Parameter Data for the ADF4118 RF Input (Up to 1.8 GHz)