ANALOG DEVICES ADF4113HV Service Manual

High Voltage
V
VDDA
V

FEATURES

High voltage charge pump (15 V)
2.7 V to 5.5 V power supply 200 MHz to 4.0 GHz frequency range Pin compatible with ADF4110, ADF4111, ADF4112, ADF4113
ADF4106, and ADF4002 synthesizers Two selectable charge pump currents Digital lock detect Power-down mode Loop filter design possible with ADIsimPLL™

APPLICATIONS

Applications using high voltage VCOs IF/RF local oscillator (LO) generation in base stations Point-to-point radio LO generation Clock for analog-to-digital and digital-to-analog converters Wireless LANs, PMR Communications test equipment
Charge Pump, PLL Synthesizer
ADF4113HV
GENERAL DESCRIPTION
The ADF4113HV is an integer-N frequency synthesizer with a high voltage charge pump (15 V). The synthesizer is designed for use with voltage controlled oscillators (VCOs) that have high tuning voltages (up to 15 V). Active loop filters are often used to achieve high tuning voltages, but the ADF4113HV charge pump can drive a high voltage VCO directly with a passive-loop filter. The ADF4113HV can be used to implement local oscillators in the upconversion and downconversion sections of wireless receivers and transmitters. It consists of a low noise digital phase frequency detector (PFD), a precision high voltage charge pump, a programmable reference divider, programmable A and B counters, and a dual-modulus prescaler (P/P + 1).
A simple 3-wire interface controls all of the on-chip registers. The devices operate with a power supply ranging from 2.7 V to
5.5 V and can be powered down when not in use.
REF
CLK
DATA
RFINA
RF
IN

FUNCTIONAL BLOCK DIAGRAM

D
DD
IN
24-BIT
LE
B
INPUT REGISTER
SD
FROM
FUNCTION
LATCH
PRESCALER
P/P + 1
22
OUT
N=BP+A
R COUNTER
R COUNTER
FUNCTION
A, B COUNT ER
13-BIT
B COUNTER
LOAD
LOAD
6-BIT
A COUNTER
14-BIT
14
LATCH
LATCH
LATCH
19
13
P
CPGND
PHASE
FREQUENCY
DETECTOR
LOCK
DETECT
SD
AV
OUT
REFERENCE
CHARGE
PUMP
CURRENT
SETTING
DD
MUX
M3 M2 M1
ADF4113HV
6
R
SET
HIGH Z
CP
MUXOUT
CE AGND DGND
06223-001
Figure 1.
Rev. A
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 www.analog.com Fax: 781.461.3113 ©2007–2008 Analog Devices, Inc. All rights reserved.
ADF4113HV
TABLE OF CONTENTS
Features .............................................................................................. 1
Prescaler (P/P + 1) ........................................................................9
Applications ....................................................................................... 1
Functional Block Diagram .............................................................. 1
Revision History ............................................................................... 2
Specifications ..................................................................................... 3
Timing Characteristics ................................................................ 4
Absolute Maximum Ratings ............................................................ 5
Transistor Count ........................................................................... 5
Thermal Resistance ...................................................................... 5
ESD Caution .................................................................................. 5
Pin Configurations and Function Descriptions ........................... 6
Typical Performance Characteristics ............................................. 7
Circuit Description ........................................................................... 9
Reference Input Section ............................................................... 9
RF Input Stage ............................................................................... 9
A and B Counters ..........................................................................9
R Counter .......................................................................................9
Phase Frequency Detector (PFD) and Charge Pump ............ 10
Muxout and Lock Detect ........................................................... 10
Input Shift Register .................................................................... 10
Function Latch ............................................................................ 13
Applications ..................................................................................... 15
Using a Digitial-to-Analog Converter to Drive the R
Pin .................................................................................. 15
SET
Interfacing ................................................................................... 15
PCB Design Guidelines for Chip Scale Package .................... 16
Outline Dimensions ....................................................................... 17
Ordering Guide .......................................................................... 17

REVISION HISTORY

9/08—Rev. 0 to Rev. A
Changes to Figure 22 ...................................................................... 13
1/07—Revision 0: Initial Version
Rev. A | Page 2 of 20
ADF4113HV

SPECIFICATIONS

AVDD = DVDD = 3 V ± 10%, 5 V ± 10%; 13.5 V < VP ≤ 16.5 V; AGND = DGND = CPGND = 0 V; R T
= T
to T
A
MIN
, unless otherwise noted. Operating temperature range for B version: −40°C to +85°C.
MAX
Table 1.
1
Parameter B Version B Chips
Unit Test Conditions/Comments
RF CHARACTERISTICS (3 V)
RF Input Sensitivity −15/0 −15/0 dBm min/max
RF Input Frequency 0.2/3.7 0.2/3.7 GHz min/max For lower frequencies, ensure SR > 130 V/s
Prescaler Output Frequency
2
165 165 MHz max
RF CHARACTERISTICS (5 V)
RF Input Sensitivity −10/0 −10/0 dBm min/max
RF Input Frequency 0.2/3.7 0.2/3.7 GHz min/max For lower frequencies, ensure SR > 130 V/µs
0.2/4.0 0.2/4.0 GHz min/max Input level = −5 dBm Prescaler Output Frequency 200 200 MHz max
REFIN CHARACTERISTICS
REFIN Input Frequency 5/150 5/150 MHz min/max For f < 5 MHz, ensure SR > 100 V/µs Reference Input Sensitivity 0.4/AVDD 0.4/AVDD V p-p min/max AVDD = 3.3 V, biased at AVDD/2
1.0/AVDD 1.0/AVDD V p-p min/max For f ≥ 10 MHz, AVDD = 5 V, biased at AVDD/2 REFIN Input Capacitance 10 10 pF max REFIN Input Current ±100 ±100 µA max
PHASE DETECTOR FREQUENCY 5 5 MHz max CHARGE PUMP
I
Sink/Source R
CP
= 4.7 kΩ
SET
High Value 640 640 A typ
Low Value 80 80 µA typ Absolute Accuracy 2.5 2.5 % typ R
Range 3.9/10 3.9/10 kΩ typ
SET
ICP Three-State Leakage Current 5 5 nA max Sink and Source Current Matching 3 3 % typ 1 V ≤ VCP ≤ VP – 1 V ICP vs. VCP 1.5 1.5 % typ 1 V ≤ VCP ≤ VP – 1 V ICP vs. Temperature 2 2 % typ VCP = VP/2
LOGIC INPUTS
V
, Input High Voltage 0.8 × DVDD 0.8 × DVDD V min
INH
V
, Input Low Voltage 0.2 × DVDD 0.2 × DVDD V max
INL
I
, Input Current ±1 ±1 µA max
INH/IINL
CIN, Input Capacitance 10 10 pF max
LOGIC OUTPUTS
VOH, Output High Voltage DVDD − 0.4 DVDD − 0.4 V min IOH = 500 µA VOL, Output Low Voltage 0.4 0.4 V max IOL = 500 µA
POWER SUPPLIES
AVDD 2.7/5.5 2.7/5.5 V min/V max DVDD AVDD AVDD VP 13.5/16.5 13.5/16.5 V min/V max
5
I
(AIDD + DIDD) 16 11 mA max 11 mA typical
DD
IP 0.25 0.25 mA max TA = 25°C Low Power Sleep Mode 1 1 µA typ
NOISE CHARACTERISTICS
= PN
− 10logf
TOT
6
−212 −212 dBc/Hz typ
− 20logN.
PFD
Normalized Phase Noise Floor
1
The B chip specifications are given as typical values.
2
This is the maximum operating frequency of the CMOS counters. The prescaler value should be chosen to ensure that the RF input is divided down to a frequency that
is less than this value.
3
AC coupling ensures AVDD/2 bias.
4
Guaranteed by characterization.
5
TA = 25oC; AVDD = DVDD = 5.5 V; P = 16; RFIN = 900 MHz.
6
The synthesizer phase noise floor is estimated by measuring the in-band phase noise at the output of the VCO, PN
value) and 10logf
: PN
PFD
SYNTH
= 4.7 kΩ; dBm referred to 50 Ω;
SET
3
, and subtracting 20logN (where N is the N divider
TOT
3, 4
Rev. A | Page 3 of 20
ADF4113HV

TIMING CHARACTERISTICS

Guaranteed by design but not production tested. AVDD = DVDD = 3 V ± 10%, 5 V ± 10%; 13.5 V ≤ VP ≤ 16.5 V; AGND = DGND = CPGND = 0 V; R
Table 2.
Parameter Limit at T
t1 20 ns min LE setup time t2 10 ns min DATA to CLK setup time t3 10 ns min DATA to CLK hold time t4 25 ns min CLK high duration t5 25 ns min CLK low duration t6 10 ns min CLK to LE setup time t7 20 ns min LE pulse width

Timing Diagram

CLK
= 4.7 kΩ; TA = T
SET
to T
MIN
(B Version) Unit Test Conditions/Comments
MAX
MIN
to T
, unless otherwise noted.
MAX
t
4
t
5
DATA
t
2
DB23 (MSB) DB22 DB2
LE
t
1
LE
t
3
DB1
(CONTROL BIT C2)
DB0 (LSB)
(CONTROL BIT C1)
t
7
t
6
06223-002
Figure 2. Timing Diagram
Rev. A | Page 4 of 20
ADF4113HV

ABSOLUTE MAXIMUM RATINGS

TA = 25°C, unless otherwise noted.
Table 3.
Parameter Rating
AVDD to GND1 −0.3 V to +7 V AVDD to DVDD −0.3 V to +0.3 V VP to GND −0.3 V to +18 V Digital I/O Voltage to GND −0.3 V to VDD + 0.3 V Analog I/O Voltage to GND −0.3 V to VP + 0.3 V REFIN, RFINA, RFINB to GND −0.3 V to VDD + 0.3 V RFINA to RFINB ±320 mV Operating Temperature Range
Industrial (B Version) −40°C to +85°C
Storage Temperature Range −65°C to +150°C Maximum Junction Temperature 150°C Lead Temperature, Soldering
Vapor Phase (60 sec) 215°C Infrared (15 sec) 220°C
1
GND = AGND = DGND = 0 V.
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

TRANSISTOR COUNT

The transistor count is 12,150 (CMOS) and 348 (bipolar).

THERMAL RESISTANCE

Table 4. Thermal Resistance
Package Type θJA Unit
TSSOP 150.4 °C/W LFCSP (Paddle Soldered) 122 °C/W LFCSP (Paddle Not Soldered) 216 °C/W

ESD CAUTION

This device is a high performance RF integrated circuit with an ESD rating of <1 kV, and it is ESD sensitive. Proper precautions should be taken for handling and assembly.
Rev. A | Page 5 of 20
ADF4113HV
C

PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS

DD
DD
SET
1
R
SET
2
CP
3
PGND
AGND
R
R
AV
REF
FIN
FIN
B
A
DD
IN
ADF4113HV
TOP VIEW
4
(Not to Scale)
5
6
7
8
Figure 3. TSSOP Pin Configuration
16
15
14
13
12
11
10
9
V
P
DV
DD
MUXOUT
LE
DATA
CLK
CE
DGND
1CPGND 2AGND 3AGND 4RF
B
IN
5RF
A
IN
6223-003
Figure 4. LFCSP Pin Configuration
Table 5. Pin Function Descriptions
TSSOP Pin No.
1 19 R
2 20 CP
LFCSP Pin No. Mnemonic Description
SET
Connecting a resistor between this pin and CPGND sets the maximum charge pump output current. The nominal voltage potential at the R I
and R
SET
is I
CP
Charge Pump Output. When enabled, this pin provides ±I
CPmax
= 3/R
. Therefore, with R
SET
pin is 0.56 V for the ADF4113HV. The relationship between
SET
= 4.7 kΩ, I
SET
CPmax
CP
drives the external VCO. 3 1 CPGND Charge Pump Ground. CPGND is the ground return path for the charge pump. 4 2, 3 AGND Analog Ground. This is the ground return path of the prescaler. 5 4 RFINB
Complementary Input to the RF Prescaler. This point should be decoupled to the ground plane with
a small bypass capacitor, typically 100 pF. 6 5 RFINA Input to the RF Prescaler. This small-signal input is ac-coupled from the VCO. 7 6, 7 AVDD
Analog Power Supply. The power supply can range from 2.7 V to 5.5 V. Decoupling capacitors to the
analog ground plane should be placed as close as possible to this pin. AVDD must be the same value
.
as DV
DD
8 8 REFIN
Reference Input. This pin is a CMOS input with a nominal threshold of V
input resistance of 100 kΩ. This input can be driven from a TTL or CMOS crystal oscillator, or can be
ac-coupled. 9 9, 10 DGND Digital Ground. 10 11 CE
Chip Enable. A Logic low on this pin powers down the device and puts the charge pump output
into three-state mode. Taking the pin high powers up the device depending on the status of the
Power-Down Bit PD1. 11 12 CLK
Serial Clock Input. This serial clock is used to clock in the serial data to the registers. The data is
latched into the 24-bit shift register on the CLK rising edge. This input is a high impedance CMOS
input. 12 13 DATA
Serial Data Input. The serial data is loaded MSB first with the two LSBs being the control bits. This
input is a high impedance CMOS input. 13 14 LE
Load Enable, CMOS Input. When LE goes high, the data stored in the shift registers is loaded into
one of the four latches; the latch is selected using the control bits. 14 15 MUXOUT
Multiplexer Output. This multiplexer output allows either the lock detect, the scaled RF, or the
scaled reference frequency to be externally accessed. 15 16, 17 DVDD
Digital Power Supply. This can range from 2.7 V to 5.5 V. Decoupling capacitors to the digital ground
plane (1µF, 1nF) should be placed as close as possible to this pin. For best performance, the 1 µF
capacitor should be placed within 2 mm of the pin. The placing of the 1nF capacitor is less critical
16 18 VP
but should still be within 5 mm of the pin. DV
Charge Pump Power Supply. V
can range from 13.5 V to 16.5 V and should be decoupled
P
must have the same value as AVDD.
DD
appropriately.
P
DV
R
CP
DV
V
16
17
19
20
18
PIN 1 INDICATO R
ADF4113HV
TOP VIEW
(Not to Scale)
8
6
7
DD
DD
AV
AV
REF
15 MUXO UT 14 LE 13 DATA 12 CLK 11 CE
9
10
IN
DGND
DGND
= 640 A.
to the external loop filter; in turn, this
/2, and an equivalent
DD
06223-004
Rev. A | Page 6 of 20
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