2.7 V to 3.3 V power supply
Separate charge pump supply (VP) allows extended
tuning voltage in 3 V systems
Programmable dual-modulus prescaler
8/9, 16/17, 32/33, 64/65
Programmable charge pump currents
Programmable antibacklash pulse width
3-wire serial interface
Analog and digital lock detect
Hardware and software power-down mode
APPLICATIONS
Broadband wireless access
Satellite systems
Instrumentation
Wireless LANS
Base stations for wireless radios
FUNCTIONAL BLOCK DIAGRAM
DV
AV
DD
DD
ADF4106
GENERAL DESCRIPTION
The ADF4106 frequency synthesizer can be used to implement
local oscillators in the up-conversion and down-conversion
sections of wireless receivers and transmitters. It consists of a
low noise, digital phase frequency detector (PFD), a precision
charge pump, a programmable reference divider, programmable
A counter and B counter, and a dual-modulus prescaler (P/P +
1). The A (6-bit) counter and B (13-bit) counter, in conjunction
with the dual-modulus prescaler (P/P + 1), implement an N
divider (N = BP + A). In addition, the 14-bit reference counter
(R Counter) allows selectable REF
input. A complete phase-locked loop (PLL) can be implemented
if the synthesizer is used with an external loop filter and voltage
controlled oscillator (VCO). Its very high bandwidth means
that frequency doublers can be eliminated in many high
frequency systems, simplifying system architecture and
reducing cost.
V
CPGND
P
frequencies at the PFD
IN
R
SET
REF
IN
CLK
DATA
LE
RFINA
RF
B
IN
Rev. B
Information furnished by Analog Devices is believed to be accurate and reliable.
However, no responsibility is assumed by Analog Devices for its use, nor for any
infringements of patents or other rights of third parties that may result from its use.
Specifications subject to change without notice. No license is granted by implication
or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
High Value 5 5 mA typ With R
Low Value 625 625 μA typ
Absolute Accuracy 2.5 2.5 % typ With R
R
Range 3.0/11 3.0/11 kΩ typ See Table 9
SET
ICP Three-State Leakage 2 2 nA max 1 nA typical; TA = 25°C
Sink and Source Current Matching 2 2 % typ 0.5 V ≤ VCP ≤ VP − 0.5 V
= 5.1 kΩ, dBm referred to 50 Ω, TA = T
SET
For lower frequencies, ensure
slew rate (SR) > 320 V/μs
= 5.1 kΩ
SET
= 5.1 kΩ
SET
MAX
to T
MIN
,
ICP vs. V
CP
1.5 1.5 % typ 0.5 V ≤ VCP ≤ VP − 0.5 V
ICP vs. Temperature 2 2 % typ VCP = VP/2
LOGIC INPUTS
VIH, Input High Voltage 1.4 1.4 V min
VIL, Input Low Voltage 0.6 0.6 V max
I
, I
, Input Current ±1 ±1 μA max
INH
INL
CIN, Input Capacitance 10 10 pF max
LOGIC OUTPUTS
VOH, Output High Voltage 1.4 1.4 V min
Open-drain output chosen, 1 kΩ pull-up
resistor to 1.8 V
VOH, Output High Voltage VDD − 0.4 VDD − 0.4 V min CMOS output chosen
I
OH
100 100 μA max
VOL, Output Low Voltage 0.4 0.4 V max IOL = 500 μA
POWER SUPPLIES
AV
DD
DV
DD
V
P
7
I
(AI
DD
I
DD
I
DD
I
P
+ DI ) 11 9.0 mA max 9.0 mA typ
DDDD
8
(AI
+ DI ) 11.5 9.5 mA max 9.5 mA typ
DDDD
9
(AI
+ DI ) 13 10.5 mA max 10.5 mA typ
DDDD
Power-Down Mode10
+ DIDD)
(AI
DD
2.7/3.3 2.7/3.3 V min/V max
AV
DD
AV
DD
AVDD/5.5 AVDD/5.5 V min/V max AVDD ≤ VP ≤ 5.5V
0.4 0.4 mA max TA = 25°C
10 10 μA typ
Rev. B | Page 3 of 24
ADF4106
www.BDTIC.com/ADI
Parameter B Version1B Chips2 (typ) Unit Test Conditions/Comments
NOISE CHARACTERISTICS
ADF4106 Normalized
Phase Noise Floor
Phase Noise Performance
900 MHz
13
5800 MHz
5800 MHz
11
12
14
15
Spurious Signals
900 MHz
5800 MHz
5800 MHz
1
Operating temperature range (B Version) is –40°C to +85°C.
2
The B chip specifications are given as typical values.
3
This is the maximum operating frequency of the CMOS counters. The prescaler value should be chosen to ensure that the RF input is divided down to a frequency that
is less than this value.
4
AVDD = DVDD = 3 V.
5
AC coupling ensures AVDD/2 bias.
6
Guaranteed by design. Sample tested to ensure compliance.
7
TA = 25°C; AVDD = DVDD = 3 V; P = 16; RFIN = 900 MHz.
8
TA = 25°C; AVDD = DVDD = 3 V; P = 16; RFIN = 2.0 GHz.
9
TA = 25°C; AVDD = DVDD = 3 V; P = 32; RFIN = 6.0 GHz.
10
TA = 25°C; AVDD = DVDD = 3.3 V; R = 16383; A = 63; B = 891; P = 32; RFIN = 6.0 GHz.
11
The synthesizer phase noise floor is estimated by measuring the in-band phase noise at the output of the VCO and subtracting 20 log N (where N is the N divider
value) and 10 log F
12
The phase noise is measured with the EVAL-ADF4106EB1 evaluation board and the Agilent E4440A Spectrum Analyzer. The spectrum analyzer provides the REFIN for
the synthesizer (f
13
f
= 10 MHz; f
REFIN
14
f
= 10 MHz; f
REFIN
15
f
= 10 MHz; f
REFIN
13
14
15
. PN
= PN
PFD
SYNTH
= 10 MHz @ 0 dBm).
REFOUT
= 200 kHz; Offset Frequency = 1 kHz; fRF = 900 MHz; N = 4500; Loop B/W = 20 kHz.
PFD
= 200 kHz; Offset Frequency = 1 kHz; fRF = 5800 MHz; N = 29000; Loop B/W = 20 kHz.
PFD
= 1 MHz; Offset Frequency = 1 kHz; fRF = 5800 MHz; N = 5800; Loop B/W = 100 kHz.
Parameter Limit1 (B Version) Unit Test Conditions/Comments
t
1
t
2
t
3
t
4
t
5
t
6
1
Operating temperature range (B Version) is –40°C to +85°C.
–219 –219 dBc/Hz typ
@ VCO output
–92.5 −92.5 dBc/Hz typ @ 1 kHz offset and 200 kHz PFD frequency
−76.5 −76.5 dBc/Hz typ @ 1 kHz offset and 200 kHz PFD frequency
−83.5 −83.5 dBc/Hz typ @ 1 kHz offset and 1 MHz PFD frequency
–90/–92 –90/–92 dBc typ @ 200 kHz/400 kHz and 200 kHz PFD frequency
–65/–70 –65/–70 dBc typ @ 200 kHz/400 kHz and 200 kHz PFD frequency
–70/–75 –70/–75 dBc typ @ 1 MHz/2 MHz and 1 MHz PFD frequency
− 20 log N.
PFD
= 5.1 kΩ, dBm referred to 50 Ω, TA = T
SET
10 ns min DATA to CLOCK Setup Time
10 ns min DATA to CLOCK Hold Time
25 ns min CLOCK High Duration
25 ns min CLOCK Low Duration
10 ns min CLOCK to LE Setup Time
20 ns min LE Pulse Width
t
t
3
4
MAX
to T
MIN
,
CLOCK
DATA
DB23 (MSB)
LE
LE
t
t
1
2
DB22
DB2
Figure 2. Timing Diagram
Rev. B | Page 4 of 24
DB1 (CONTROL
BIT C2)
DB0 (LSB)
(CONTROL BIT C1)
t
5
t
6
02720-002
ADF4106
www.BDTIC.com/ADI
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 3.
Parameter Rating
AVDD to GND1 –0.3 V to + 3.6 V
AVDD to DVDD –0.3 V to + 0.3 V
VP to GND –0.3 V to + 5.8 V
VP to AVDD –0.3 V to + 5.8 V
Digital I/O Voltage to GND –0.3 V to VDD + 0.3 V
Analog I/O Voltage to GND –0.3 V to VP + 0.3 V
REFIN, RFINA, RFINB to GND –0.3 V to VDD + 0.3 V
Operating Temperature Range
Industrial (B Version) –40°C to +85°C
Storage Temperature Range –65°C to +125°C
Maximum Junction Temperature 150°C
TSSOP θJA Thermal Impedance 112°C/W
LFCSP θJA Thermal Impedance
(Paddle Soldered)
Reflow Soldering
Peak Temperature 260°C
Time at Peak Temperature 40 sec
Transistor Count
CMOS 6425
Bipolar 303
1
GND = AGND = DGND = 0 V.
30.4°C/W
S
tresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
This device is a high performance RF integrated circuit with an
ES
D rating of <2 kV, and it is ESD sensitive. Proper precautions
should be taken for handling and assembly.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
Figure 12. Reference Spurs (5.8 GHz,1 MHz, and 100 kHz)
–60
–70
–80
PHASE NOISE (dBc/Hz)
–90
–100
TEMPERATURE (°C)
Figure 13. Phase Noise (5.8 GHz,1 MHz, and 100 kHz) vs. Temperature
10dB/DIV
= –40dBc/Hz
R
L
RMS NOISE = 1.8°
= 3V, VP = 5V
V
DD
= 5mA
I
CP
PFD FREQUENCY = 1MHz
LOOP BANDWIDTH = 100kHz
RES BANDWIDTH = 1kHz
VIDEO BANDWIDTH = 1kHz
SWEEP = 13 SECONDS
AVERAGES = 1
–65.0dBc
VDD = 3V
V
P
= 3V
02720-011
–5
–15
–25
–35
–45
–55
–65
–75
–85
FIRST REFERENCE SPUR (dBc)
–95
–105
TUNNING VOLTAGE (V)
Figure 14. Reference Spurs vs. V
(5.8 GHz,1 MHz, and 100 kHz)
TUNE
VDD = 3V
V
= 5V
P
501234
02720-014
02720-012
PHASE NOISE (dBc/Hz)
–120
–130
–140
–150
–160
–170
–180
PHASE ETECTOR FREQUENCY (Hz)
VDD = 3V
V
= 5V
P
02720-015
100M10k100k1M10M
Figure 15. Phase Noise (Referred to CP Output) vs. PFD Frequency
–6
–5
–4
–3
–2
–1
0
(mA)
CP
I
1
2
3
4
02720-013
100–40–200 20406080
5
6
V
CP
(V)
VPP = 5V
SETTLING = 5mA
I
CP
02720-016
5.000.51.0 1.52.0 2.53.0 3.54.0 4.5
Figure 16. Charge Pump Output Characteristics
Rev. B | Page 8 of 24
ADF4106
www.BDTIC.com/ADI
GENERAL DESCRIPTION
REFERENCE INPUT SECTION
The reference input stage is shown in Figure 17. SW1 and SW2
are normally closed switches. SW3 is a normally open switch.
When power-down is initiated, SW3 is closed and SW1 and
SW2 are opened. This ensures that there is no loading of the
REF
pin on power-down.
IN
POWER-DOWN
CONTROL
100kΩ
NC
REF
SW2
IN
NC
SW1
SW3
NO
Figure 17. Reference Input Stage
BUFFER
TO R COUNTER
RF INPUT STAGE
The RF input stage is shown in Figure 18. It is followed by a
2-stage limiting amplifier to generate the CML clock levels
needed for the prescaler.
02720-017
A COUNTER AND B COUNTER
The A counter and B CMOS counter combine with the dual
modulus prescaler to allow a wide ranging division ratio in the
PLL feedback counter. The counters are specified to work when
the prescaler output is 325 MHz or less. Thus, with an RF input
frequency of 4.0 GHz, a prescaler value of 16/17 is valid, but a
value of 8/9 is not valid.
Pulse Swallow Function
The A counter and B counter, in conjunction with the dualmodulus prescaler, make it possible to generate output
frequencies that are spaced only by the reference frequency
divided by R. The equation for the VCO frequency is
f
REFIN
()
[]
f×+×=
VCO
ABP
where:
is the output frequency of the external voltage controlled
f
VCO
oscillator (VCO).
P is t
he preset modulus of the dual-modulus prescaler
(8/9, 16/17, etc.).
R
500Ω
1.6V
500Ω
AV
DD
AGND
02720-018
RFINA
RF
IN
BIAS
GENERATOR
B
Figure 18. RF Input Stage
PRESCALER (P/P +1)
The dual-modulus prescaler (P/P + 1), along with the A counter
and B counter, enables the large division ratio, N, to be realized
(N = BP + A). The dual-modulus prescaler, operating at CML
levels, takes the clock from the RF input stage and divides it
down to a manageable frequency for the CMOS A counter and
B counter. The prescaler is programmable. It can be set in software to 8/9, 16/17, 32/33, or 64/65. It is based on a synchronous
4/5 core. There is a minimum divide ratio possible for fully
contiguous output frequencies. This minimum is determined by
P, the prescaler value, and is given by (P
2
− P).
B is t
he preset divide ratio of the binary 13-bit counter
(3 to 8191).
A is t
he preset divide ratio of the binary 6-bit swallow
counter (0 to 63).
is the external reference frequency oscillator.
f
REFIN
N = BP + A
TO PFD
FROM RF
INPUT STAGE
PRESCALER
P/P + 1
MODULUS
CONTROL
N DIVIDER
Figure 19. A and B Counters
13-BIT B
COUNTER
LOAD
LOAD
6-BIT A
COUNTER
R COUNTER
The 14-bit R counter allows the input reference frequency to
be divided down to produce the reference clock to the phase
frequency detector (PFD). Division ratios from 1 to 16,383
are allowed.
02720-019
Rev. B | Page 9 of 24
ADF4106
www.BDTIC.com/ADI
PHASE FREQUENCY DETECTOR (PFD) AND
CHARGE PUMP
The PFD takes inputs from the R counter and N counter
(N = BP + A) and produces an output proportional to the
phase and frequency difference between them. Figure 20 is a
sim
plified schematic. The PFD includes a programmable delay
element that controls the width of the antibacklash pulse. This
pulse ensures that there is no dead zone in the PFD transfer
function and minimizes phase noise and reference spurs. Two
bits in the reference counter latch, ABP2 and ABP1, control the
width of the pulse. See
HI
R DIVIDER
HID1D2
N DIVIDER
MUXOUT AND LOCK DETECT
The output multiplexer on the ADF4106 allows the user
to access various internal points on the chip. The state of
MUXOUT is controlled by M3, M2, and M1 in the function
latch. Tabl e 9 shows the full truth table. Figure 21 shows the
MUX
OUT section in block diagram form.
Lock Detect
MUXOUT can be programmed for two types of lock detect:
digital lock detect and analog lock detect.
Digital lock detect is active high. When LDP in the R counter
tch is set to 0, digital lock detect is set high when the phase
la
error on three consecutive phase detector cycles is less than
15 ns. With LDP set to 1, five consecutive cycles of less than
15 ns are required to set the lock detect. It stays set high until a
phase error of greater than 25 ns is detected on any subsequent
PD cycle.
Table 7 .
UP
Q1
U1
CLR1
PROGRAMMABLE
DELAY
ABP2
ABP1
CLR2
DOWN
Q2
U2
Figure 20. PFD Simplified Schematic
U3
V
P
CPGND
CHARGE
PUMP
CP
02720-020
The N-channel, open-drain, analog lock detect should be
op
erated with an external pull-up resistor of 10 kΩ nominal.
When lock is detected, this output is high with narrow, lowgoing pulses.
DV
DD
ANALOG LOCK DETECT
DIGITAL LOCK DETECT
R COUNTER OUTPUT
N COUNTER OUTPUT
SDOUT
MUX
Figure 21. MUXOUT Circuit
CONTROL
MUXOUT
DGND
INPUT SHIFT REGISTER
The ADF4106 digital section includes a 24-bit input shift
register, a 14-bit R counter, and a 19-bit N counter, comprising a
6-bit A counter and a 13-bit B counter. Data is clocked into the
24-bit shift register on each rising edge of CLK. The data is
clocked in MSB first. Data is transferred from the shift register
to one of four latches on the rising edge of LE. The destination
latch is determined by the state of the two control bits (C2, C1)
in the shift register. These are the two LSBs, DB1 and DB0, as
shown in the timing diagram of
hese bits is shown in Tabl e 5. Ta b l e 6 shows a summary of how
t
t
he latches are programmed.
Table 5. C1, C2 Truth Table
Control Bits
C2 C1 Data Latch
0 0 R Counter
0 1 N Counter (A and B)
1 0 Function Latch (Including Prescaler)
1 1 Initialization Latch
NORMAL OPERATION
ASYNCHRONOUS POWER-DOWN
SYNCHRONOUS POWER-DOWN
3kΩ5.1kΩ11kΩ
CP
(mA)
Rev. B | Page 15 of 24
02720-026
ADF4106
www.BDTIC.com/ADI
THE FUNCTION LATCH
With C2 and C1 set to 1 and 0, respectively, the on-chip
function latch is programmed. Tabl e 9 shows the input data
rmat for programming the function latch.
fo
Counter Reset
DB2 (F1) is the counter reset bit. When this is 1, the R counter
and the N (A, B) counter are reset. For normal operation, this
bit should be 0. When powering up, disable the F1 bit (set to 0).
The N counter will then resume counting in close alignment
with the R counter. (The maximum error is one prescaler cycle).
Power-Down
DB3 (PD1) and DB21 (PD2) provide programmable powerdown modes. They are enabled by the CE pin.
When the CE pin is low, the device is immediately disabled
re
gardless of the states of PD2, PD1.
In the programmed asynchronous power-down, the device
p
owers down immediately after latching 1 into the PD1 bit,
with the condition that PD2 is loaded with 0.
In the programmed synchronous power-down, the device
p
ower-down is gated by the charge pump to prevent unwanted
frequency jumps. Once the power-down is enabled by writing 1
into the PD1 bit (provided that 1 has also been loaded to PD2),
then the device goes into power-down during the next charge
pump event.
When a power-down is activated (either synchronous or
asy
nchronous mode, including CE pin activated power-down),
the following events occur:
ll active dc current paths are removed.
• A
• The R
, N, and timeout counters are forced to their load state
conditions.
Fastlock Mode Bit
DB10 of the function latch is the fastlock mode bit. When
fastlock is enabled, this bit determines which fastlock mode is
used. If the fastlock mode bit is 0, then Fastlock Mode 1 is
selected; and if the fastlock mode bit is 1, then Fastlock Mode 2
is selected.
Fastlock Mode 1
The charge pump current is switched to the contents of Current
Setting 2. The device enters fastlock when 1 is written to the CP
gain bit in the N (A, B) counter latch. The device exits fastlock
when 0 is written to the CP gain bit in the N (A, B) counter
latch.
Fastlock Mode 2
The charge pump current is switched to the contents of Current
Setting 2. The device enters fastlock when 1 is written to the CP
gain bit in the N (A, B) counter latch. The device exits fastlock
under the control of the timer counter. After the timeout
period, which is determined by the value in TC4 to TC1, the CP
gain bit in the N (A, B) counter latch is automatically reset to 0,
and the device reverts to normal mode instead of fastlock. See
Tabl e 9 for the timeout periods.
Timer Counter Control
The user has the option of programming two charge pump
currents. The intent is that Current Setting 1 is used when the
RF output is stable and the system is in a static state. Current
Setting 2 is used when the system is dynamic and in a state of
change (that is, when a new output frequency is programmed).
The normal sequence of events follows.
The user initially decides what the preferred charge pump
c
urrents are going to be. For example, the choice may be
2.5 mA as Current Setting 1 and 5 mA as the Current Setting 2.
• The cha
• T
• The RF
• T
• The i
latching data.
rge pump is forced into three-state mode.
he digital clock detect circuitry is reset.
input is debiased.
IN
he reference input buffer circuitry is disabled.
nput register remains active and capable of loading and
MUXOUT Control
The on-chip multiplexer is controlled by M3, M2, and M1 on
the ADF4106 family. Ta b le 9 shows the truth table.
Fastlock Enable Bit
DB9 of the function latch is the fastlock enable bit. When this
bit is 1, fastlock is enabled.
Rev. B | Page 16 of 24
Simultaneously, the decision must be made as to how long the
s
econdary current stays active before reverting to the primary
current. This is controlled by the timer counter control bits,
DB14 to DB11 (TC4 to TC1), in the function latch. The truth
table is given in
To program a new output frequency, simply program the N (A,
unter latch with new values for A and B. Simultaneously,
B) co
the CP gain bit can be set to 1, which sets the charge pump with
the value in CPI6 to CPI4 for a period of time determined by
TC4 to TC1. When this time is up, the charge pump current
reverts to the value set by CPI3 to CPI1. At the same time, the
CP gain bit in the N (A, B) counter latch is reset to 0 and is now
ready for the next time the user wishes to change the frequency.
Note that there is an enable feature on the timer counter. It is
ena
bled when Fastlock Mode 2 is chosen by setting the fastlock
mode bit (DB10) in the function latch to 1.
Tabl e 9.
ADF4106
www.BDTIC.com/ADI
Charge Pump Currents
CPI3, CPI2, and CPI1 program Current Setting 1 for the charge
pump. CPI6, CPI5, and CPI4 program Current Setting 2 for the
charge pump. The truth table is given in
Tabl e 9.
Prescaler Value
P2 and P1 in the function latch set the prescaler values. The
prescaler value should be chosen so that the prescaler output
frequency is always less than or equal to 325 MHz. Therefore,
with an RF frequency of 4 GHz, a prescaler value of 16/17 is
valid, but a value of 8/9 is not valid.
PD Polarity
This bit sets the phase detector polarity bit. See Tab l e 9 .
CP Three-State
This bit controls the CP output pin. With the bit set high, the
CP output is put into three-state. With the bit set low, the CP
output is enabled.
THE INITIALIZATION LATCH
When C2 and C1 = 1 and 1, respectively, the initialization latch
is programmed. This is essentially the same as the function
latch (programmed when C2 and C1 = 1 and 0, respectively).
However, when the initialization latch is programmed, there is
a
n additional internal reset pulse applied to the R and N (A, B)
counters. This pulse ensures that the N (A, B) counter is at the
load point when the N (A, B) counter data is latched and the
device begins counting in close phase alignment.
If the latch is programmed for synchronous power-down (CE
in is high, PD1 bit is high, and PD2 bit is low), the internal
p
pulse also triggers this power-down. The prescaler reference
and the oscillator input buffer are unaffected by the internal
reset pulse; therefore, close phase alignment is maintained when
counting resumes.
When the first N (A, B) counter data is latched after
ini
tialization, the internal reset pulse is again activated.
However, successive N (A, B) counter loads after this will not
trigger the internal reset pulse.
Device Programming After Initial Power-Up
After initial power up of the device, there are three methods for
programming the device: initialization latch, CE pin, and
counter reset.
Initialization Latch Method
• Apply V
ogram the initialization latch (11 in two LSBs of input
• Pr
word). Make sure that the F1 bit is programmed to 0.
• Do a f
word), making sure that the F1 bit is programmed to a 0.
• Do a
.
DD
unction latch load (10 in two LSBs of the control
n R load (00 in two LSBs).
• Do a
n N (A, B) load (01 in two LSBs).
When the initialization latch is loaded, the following occurs:
• The f
unction latch contents are loaded.
• An in
ternal pulse resets the R, N (A, B), and timeout counters
to load-state conditions and also three-states the charge
pump. Note that the prescaler band gap reference and the
oscillator input buffer are unaffected by the internal reset
pulse, allowing close phase alignment when counting
resumes.
atching the first N (A, B) counter data after the initialization
• L
word activates the same internal reset pulse. Successive N (A,
B) loads will not trigger the internal reset pulse, unless there
is another initialization.
CE PIN METHOD
• Apply V
ing CE low to put the device into power-down. This is an
• Br
asychronous power-down in that it happens immediately.
rogram the function latch (10).
• P
• P
rogram the R counter latch (00).
• P
rogram the N (A, B) counter latch (01).
• B
ring CE high to take the device out of power-down. The R
and N (A, B) counters now resume counting in close
alignment.
Note that after CE goes high, a 1 μs duration may be required
fo
r the prescaler band gap voltage and oscillator input buffer
bias to reach steady state.
CE can be used to power the device up and down to check for
cha
nnel activity. The input register does not need to be
reprogrammed each time the device is disabled and enabled as
long as it is programmed at least once after V
applied.
DD
.
is initially
DD
COUNTER RESET METHOD
• Apply V
• Do a f
load 1 to the F1 bit. This enables the counter reset.
• Do a
• Do a
• Do a f
load 0 to the F1 bit. This disables the counter reset.
This sequence provides the same close alignment as the
nitialization method. It offers direct control over the internal
i
reset. Note that counter reset holds the counters at load point
and three-states the charge pump but does not trigger
synchronous power-down.
.
DD
unction latch load (10 in two LSBs). As part of this,
n R counter load (00 in two LSBs).
n N (A, B) counter load (01 in two LSBs).
unction latch load (10 in two LSBs). As part of this,
Rev. B | Page 17 of 24
ADF4106
www.BDTIC.com/ADI
APPLICATIONS
LOCAL OSCILLATOR FOR LMDS BASE STATION
TRANSMITTER
Figure 22 shows the ADF4106 being used with a VCO to
produce the LO for an LMDS base station.
The reference input signal is applied to the circuit at FREF
and, in this case, is terminated in 50 Ω. A typical base station
system would have either a TCXO or an OCXO driving the
reference input without any 50 Ω termination.
To achieve a channel spacing of 1 MHz at the output, the
10 MH
z reference input must be divided by 10, using the
on-chip reference divider of the ADF4106.
The charge pump output of the ADF4106 (Pin 2) drives the
op filter. In calculating the loop filter component values, a
lo
number of items need to be considered. In this example, the
loop filter was designed so that the overall phase margin for
the system would be 45°.
Other PLL system specifications include:
K
= 2.5 mA
D
K
= 80 MHz/V
V
V
DD
IN
V
P
Loop Bandwidth = 50 kHz
F
= 1 MHz
PFD
N = 5800
Extra Reference Spur Attenuation = 10 dB
These specifications are needed and used to derive the loop
f
ilter component values shown in
Figure 22.
The circuit in Figure 22 shows a typical phase noise
erformance of −83.5 dBc/Hz at 1 kHz offset from the carrier.
p
Spurs are better than −62 dBc.
The loop filter output drives the VCO, which in turn is fed
ack to the RF input of the PLL synthesizer and also drives the
b
RF output terminal. A T-circuit configuration provides 50 Ω
matching between the VCO output, the RF output, and the RF
IN
terminal of the synthesizer.
In a PLL system, it is important to know when the system
ck. In Figure 22, this is accomplished by using the
is in lo
OUT signal from the synthesizer. The MUXOUT pin
MUX
can be programmed to monitor various internal signals in the
synthesizer. One of these is the LD or lock-detect signal.
RF
OUT
100pF
18Ω
18Ω
18Ω
FREF
7
AV
1000pF
IN
1000pF
51Ω
DD
8
REF
16
15
V
DV
P
DD
2
CP
IN
100pF
6.2kΩ
4.3kΩ
20pF
14
V
CC
2
V956ME03
100pF
10
ADF4106
1.5nF
CE
MUXOUT
CLK
DATA
LE
RFINA
R
1
SET
5.1kΩ
-COMPATIBLE SERIAL BUS
®
SPI
CPGND
43
B
RF
IN
AGND
DGND
9
Figure 22. Local Oscillator for LMDS Base Station
LOCK
14
DETECT
100pF
6
5
100pF
51Ω
NOTE
DECOUPLING CAPACITORS (0.1
V
OF THE ADF4106 AND ON VCC OF THE V956ME03 HAVE
P
BEEN OMITTED FROM THE DIAGRAM TO AID CLARITY.
1, 3, 4, 5, 7, 8,
9, 11, 12, 13
μ
F/10pF) ON AVDD, DVDD, AND
02720-027
Rev. B | Page 18 of 24
ADF4106
www.BDTIC.com/ADI
INTERFACING
The ADF4106 has a simple SPI-compatible serial interface for
writing to the device. CLK, DATA, and LE control the data
transfer. When LE goes high, the 24 bits clocked into the input
register on each rising edge of CLK are transferred to the
appropriate latch. See
Tabl e 5 for the latch truth table.
The maximum allowable serial clock rate is 20 MHz. This
eans that the maximum update rate for the device is 833 kHz,
m
or one update every 1.2 μs. This is certainly more than adequate
for systems that have typical lock times in hundreds of
microseconds.
ADuC812 Interface
Figure 23 shows the interface between the ADF4106 and the
ADuC812 MicroConverter®. Since the ADuC812 is based on an
8051 core, this interface can be used with any 8051-based
microcontroller. The MicroConverter is set up for SPI master
mode with CPHA = 0. To initiate the operation, the I/O port
driving LE is brought low. Each latch of the ADF4106 needs a
24-bit word. This is accomplished by writing three 8-bit bytes
from the MicroConverter to the device. When the third byte
is written, the LE input should be brought high to complete
the transfer.
On first applying power to the ADF4106, it needs four writes
(o
ne each to the initialization latch, function latch, R counter
latch, and N counter latch) for the output to become active.
I/O port lines on the ADuC812 are also used to control
ower-down (CE input) and to detect lock (MUXOUT
p
configured as lock detect and polled by the port input).
When operating in the mode described, the maximum
OCK rate of the ADuC812 is 4 MHz. This means that
SCL
the maximum rate at which the output frequency can be
changed is 166 kHz.
SCLOCK
ADuC812
I/O PORTS
Figure 2 for the timing diagram and
CLK
MOSI
Figure 23. ADuC812-to-ADF4106 Interface
DATA
LE
ADF4106
CE
MUXOUT
(LOCK DETECT)
02720-028
ADSP2181 Interface
Figure 24 shows the interface between the ADF4106 and the
ADSP21xx digital signal processor (DSP). The ADF4106
needs a 24-bit serial word for each latch write. The easiest way
to accomplish this using the ADSP21xx family is to use the
autobuffered transmit mode of operation with alternate
framing. This provides a means for transmitting an entire block
of serial data before an interrupt is generated. Set up the word
length for 8 bits and use three memory locations for each 24-bit
word. To program each 24-bit latch, store the three 8-bit bytes,
enable the autobuffered mode, and write to the transmit register
of the DSP. This last operation initiates the autobuffer transfer.
ADSP-21xx
I/O FLAGS
SCLOCK
MOSI
TFS
Figure 24. ADSP-21xx-to-ADF4106 Interface
CLK
DATA
LE
ADF4106
CE
MUXOUT
(LOCK DETECT)
PCB DESIGN GUIDELINES FOR CHIP SCALE
PACKAGE
The lands on the LFCSP (CP-20) are rectangular. The printed
circuit board (PCB) pad for these should be 0.1 mm longer than
the package land length and 0.05 mm wider than the package
land width. The land should be centered on the pad. This
ensures that the solder joint size is maximized. The bottom of
the LFCSP has a central thermal pad.
The thermal pad on the PCB should be at least as large as this
exp
osed pad. On the PCB, there should be a clearance of at least
0.25 mm between the thermal pad and the inner edges of the
pad pattern. This ensures that shorting is avoided.
Thermal vias may be used on the PCB thermal pad to improve
t
hermal performance of the package. If vias are used, they
should be incorporated in the thermal pad at 1.2 mm pitch grid.
The via diameter should be between 0.3 mm and 0.33 mm, and
the via barrel should be plated with 1 oz. copper to plug the via.
The user should connect the PCB thermal pad to AGND.
02720-029
Rev. B | Page 19 of 24
ADF4106
R
www.BDTIC.com/ADI
OUTLINE DIMENSIONS
5.10
5.00
4.90
PIN 1
INDICATO
1.00
0.85
0.80
SEATING
PLANE
0.15
0.05
4.50
4.40
4.30
PIN 1
16
0.65
BSC
COPLANARITY
COMPLIANT TO JEDEC STANDARDS MO-153-AB
0.10
0.30
0.19
9
81
1.20
MAX
SEATING
PLANE
6.40
BSC
0.20
0.09
Figure 25. 16-Lead Thin Shrink Small Outline Package [TSSOP]
-16)
(RU
Dimensions shown in millimeters
4.00
BSC SQ
0.60
MAX
12° MAX
0.50
BSC
TOP
VIEW
0.80 MAX
0.65 TYP
0.20
REF
3.75
BCS SQ
0.05 MAX
0.02 NOM
0.75
0.55
0.35
COPLANARITY
0.08
8°
0°
0.60
MAX
16
15
11
10
PIN 1
INDICATOR
20
5
6
0.30
0.23
0.18
0.75
0.60
0.45
1
2.25
2.10 SQ
1.95
0.25 MIN
COMPLIANT TO JEDEC STANDARDS MO-220-VGGD-1
Figure 26. 20-Lead Lead Frame Chip Scale Package [LFCSP_VQ]
4
mm × 4 mm Body, Very Thin Quad
(CP-20-1)
Dimensions shown in millimeters
Rev. B | Page 20 of 24
ADF4106
www.BDTIC.com/ADI
ORDERING GUIDE
Model Temperature Range Package Description Package Option
ADF4106BRU –40°C to + 85°C 16-Lead Thin Shrink Small Outline Package (TSSOP) RU-16
ADF4106BRU-REEL –40°C to + 85°C 16-Lead Thin Shrink Small Outline Package (TSSOP) RU-16
ADF4106BRU-REEL7 –40°C to + 85°C 16-Lead Thin Shrink Small Outline Package (TSSOP) RU-16
ADF4106BRUZ
ADF4106BRUZ-RL
ADF4106BRUZ-R7
ADF4106BCP –40°C to + 85°C 20-Lead Lead Frame Chip Scale Package (LFCSP_VQ) CP-20
ADF4106BCP-REEL –40°C to + 85°C 20-Lead Lead Frame Chip Scale Package (LFCSP_VQ) CP-20
ADF4106BCP-REEL7 –40°C to + 85°C 20-Lead Lead Frame Chip Scale Package (LFCSP_VQ) CP-20
ADF4106BCPZ
ADF4106BCPZ-RL
ADF4106BCPZ-R7
EVAL-ADF4106EB1 Evaluation Board
EVAL-ADF411XEB1 Evaluation Board
1
Z = Pb-free part.
1
1
1
1
1
1
–40°C to + 85°C 16-Lead Thin Shrink Small Outline Package (TSSOP) RU-16
–40°C to + 85°C 16-Lead Thin Shrink Small Outline Package (TSSOP) RU-16
–40°C to + 85°C 16-Lead Thin Shrink Small Outline Package (TSSOP) RU-16
–40°C to + 85°C 20-Lead Lead Frame Chip Scale Package (LFCSP_VQ) CP-20
–40°C to + 85°C 20-Lead Lead Frame Chip Scale Package (LFCSP_VQ) CP-20
–40°C to + 85°C 20-Lead Lead Frame Chip Scale Package (LFCSP_VQ) CP-20