2.7 V to 3.3 V power supply
Separate charge pump supply (VP) allows extended
tuning voltage in 3 V systems
Programmable dual-modulus prescaler
8/9, 16/17, 32/33, 64/65
Programmable charge pump currents
Programmable antibacklash pulse width
3-wire serial interface
Analog and digital lock detect
Hardware and software power-down mode
APPLICATIONS
Broadband wireless access
Satellite systems
Instrumentation
Wireless LANS
Base stations for wireless radios
FUNCTIONAL BLOCK DIAGRAM
DV
AV
DD
DD
ADF4106
GENERAL DESCRIPTION
The ADF4106 frequency synthesizer can be used to implement
local oscillators in the up-conversion and down-conversion
sections of wireless receivers and transmitters. It consists of a
low noise, digital phase frequency detector (PFD), a precision
charge pump, a programmable reference divider, programmable
A counter and B counter, and a dual-modulus prescaler (P/P +
1). The A (6-bit) counter and B (13-bit) counter, in conjunction
with the dual-modulus prescaler (P/P + 1), implement an N
divider (N = BP + A). In addition, the 14-bit reference counter
(R Counter) allows selectable REF
input. A complete phase-locked loop (PLL) can be implemented
if the synthesizer is used with an external loop filter and voltage
controlled oscillator (VCO). Its very high bandwidth means
that frequency doublers can be eliminated in many high
frequency systems, simplifying system architecture and
reducing cost.
V
CPGND
P
frequencies at the PFD
IN
R
SET
REF
IN
CLK
DATA
LE
RFINA
RF
B
IN
Rev. B
Information furnished by Analog Devices is believed to be accurate and reliable.
However, no responsibility is assumed by Analog Devices for its use, nor for any
infringements of patents or other rights of third parties that may result from its use.
Specifications subject to change without notice. No license is granted by implication
or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
High Value 5 5 mA typ With R
Low Value 625 625 μA typ
Absolute Accuracy 2.5 2.5 % typ With R
R
Range 3.0/11 3.0/11 kΩ typ See Table 9
SET
ICP Three-State Leakage 2 2 nA max 1 nA typical; TA = 25°C
Sink and Source Current Matching 2 2 % typ 0.5 V ≤ VCP ≤ VP − 0.5 V
= 5.1 kΩ, dBm referred to 50 Ω, TA = T
SET
For lower frequencies, ensure
slew rate (SR) > 320 V/μs
= 5.1 kΩ
SET
= 5.1 kΩ
SET
MAX
to T
MIN
,
ICP vs. V
CP
1.5 1.5 % typ 0.5 V ≤ VCP ≤ VP − 0.5 V
ICP vs. Temperature 2 2 % typ VCP = VP/2
LOGIC INPUTS
VIH, Input High Voltage 1.4 1.4 V min
VIL, Input Low Voltage 0.6 0.6 V max
I
, I
, Input Current ±1 ±1 μA max
INH
INL
CIN, Input Capacitance 10 10 pF max
LOGIC OUTPUTS
VOH, Output High Voltage 1.4 1.4 V min
Open-drain output chosen, 1 kΩ pull-up
resistor to 1.8 V
VOH, Output High Voltage VDD − 0.4 VDD − 0.4 V min CMOS output chosen
I
OH
100 100 μA max
VOL, Output Low Voltage 0.4 0.4 V max IOL = 500 μA
POWER SUPPLIES
AV
DD
DV
DD
V
P
7
I
(AI
DD
I
DD
I
DD
I
P
+ DI ) 11 9.0 mA max 9.0 mA typ
DDDD
8
(AI
+ DI ) 11.5 9.5 mA max 9.5 mA typ
DDDD
9
(AI
+ DI ) 13 10.5 mA max 10.5 mA typ
DDDD
Power-Down Mode10
+ DIDD)
(AI
DD
2.7/3.3 2.7/3.3 V min/V max
AV
DD
AV
DD
AVDD/5.5 AVDD/5.5 V min/V max AVDD ≤ VP ≤ 5.5V
0.4 0.4 mA max TA = 25°C
10 10 μA typ
Rev. B | Page 3 of 24
ADF4106
www.BDTIC.com/ADI
Parameter B Version1B Chips2 (typ) Unit Test Conditions/Comments
NOISE CHARACTERISTICS
ADF4106 Normalized
Phase Noise Floor
Phase Noise Performance
900 MHz
13
5800 MHz
5800 MHz
11
12
14
15
Spurious Signals
900 MHz
5800 MHz
5800 MHz
1
Operating temperature range (B Version) is –40°C to +85°C.
2
The B chip specifications are given as typical values.
3
This is the maximum operating frequency of the CMOS counters. The prescaler value should be chosen to ensure that the RF input is divided down to a frequency that
is less than this value.
4
AVDD = DVDD = 3 V.
5
AC coupling ensures AVDD/2 bias.
6
Guaranteed by design. Sample tested to ensure compliance.
7
TA = 25°C; AVDD = DVDD = 3 V; P = 16; RFIN = 900 MHz.
8
TA = 25°C; AVDD = DVDD = 3 V; P = 16; RFIN = 2.0 GHz.
9
TA = 25°C; AVDD = DVDD = 3 V; P = 32; RFIN = 6.0 GHz.
10
TA = 25°C; AVDD = DVDD = 3.3 V; R = 16383; A = 63; B = 891; P = 32; RFIN = 6.0 GHz.
11
The synthesizer phase noise floor is estimated by measuring the in-band phase noise at the output of the VCO and subtracting 20 log N (where N is the N divider
value) and 10 log F
12
The phase noise is measured with the EVAL-ADF4106EB1 evaluation board and the Agilent E4440A Spectrum Analyzer. The spectrum analyzer provides the REFIN for
the synthesizer (f
13
f
= 10 MHz; f
REFIN
14
f
= 10 MHz; f
REFIN
15
f
= 10 MHz; f
REFIN
13
14
15
. PN
= PN
PFD
SYNTH
= 10 MHz @ 0 dBm).
REFOUT
= 200 kHz; Offset Frequency = 1 kHz; fRF = 900 MHz; N = 4500; Loop B/W = 20 kHz.
PFD
= 200 kHz; Offset Frequency = 1 kHz; fRF = 5800 MHz; N = 29000; Loop B/W = 20 kHz.
PFD
= 1 MHz; Offset Frequency = 1 kHz; fRF = 5800 MHz; N = 5800; Loop B/W = 100 kHz.
Parameter Limit1 (B Version) Unit Test Conditions/Comments
t
1
t
2
t
3
t
4
t
5
t
6
1
Operating temperature range (B Version) is –40°C to +85°C.
–219 –219 dBc/Hz typ
@ VCO output
–92.5 −92.5 dBc/Hz typ @ 1 kHz offset and 200 kHz PFD frequency
−76.5 −76.5 dBc/Hz typ @ 1 kHz offset and 200 kHz PFD frequency
−83.5 −83.5 dBc/Hz typ @ 1 kHz offset and 1 MHz PFD frequency
–90/–92 –90/–92 dBc typ @ 200 kHz/400 kHz and 200 kHz PFD frequency
–65/–70 –65/–70 dBc typ @ 200 kHz/400 kHz and 200 kHz PFD frequency
–70/–75 –70/–75 dBc typ @ 1 MHz/2 MHz and 1 MHz PFD frequency
− 20 log N.
PFD
= 5.1 kΩ, dBm referred to 50 Ω, TA = T
SET
10 ns min DATA to CLOCK Setup Time
10 ns min DATA to CLOCK Hold Time
25 ns min CLOCK High Duration
25 ns min CLOCK Low Duration
10 ns min CLOCK to LE Setup Time
20 ns min LE Pulse Width
t
t
3
4
MAX
to T
MIN
,
CLOCK
DATA
DB23 (MSB)
LE
LE
t
t
1
2
DB22
DB2
Figure 2. Timing Diagram
Rev. B | Page 4 of 24
DB1 (CONTROL
BIT C2)
DB0 (LSB)
(CONTROL BIT C1)
t
5
t
6
02720-002
ADF4106
www.BDTIC.com/ADI
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 3.
Parameter Rating
AVDD to GND1 –0.3 V to + 3.6 V
AVDD to DVDD –0.3 V to + 0.3 V
VP to GND –0.3 V to + 5.8 V
VP to AVDD –0.3 V to + 5.8 V
Digital I/O Voltage to GND –0.3 V to VDD + 0.3 V
Analog I/O Voltage to GND –0.3 V to VP + 0.3 V
REFIN, RFINA, RFINB to GND –0.3 V to VDD + 0.3 V
Operating Temperature Range
Industrial (B Version) –40°C to +85°C
Storage Temperature Range –65°C to +125°C
Maximum Junction Temperature 150°C
TSSOP θJA Thermal Impedance 112°C/W
LFCSP θJA Thermal Impedance
(Paddle Soldered)
Reflow Soldering
Peak Temperature 260°C
Time at Peak Temperature 40 sec
Transistor Count
CMOS 6425
Bipolar 303
1
GND = AGND = DGND = 0 V.
30.4°C/W
S
tresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
This device is a high performance RF integrated circuit with an
ES
D rating of <2 kV, and it is ESD sensitive. Proper precautions
should be taken for handling and assembly.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.