ANALOG DEVICES ADF 4001 BRUZ Datasheet

a
2013
781/461-3113
B
200 MHz Clock Generator PLL
ADF4001
FEATURES 200 MHz Bandwidth
2.7 V to 5.5 V Power Supply Separate Charge Pump Supply (V
) Allows Extended
P
Tuning Voltage in 5 V Systems Programmable Charge Pump Currents 3-Wire Serial Interface Hardware and Software Power-Down Mode Analog and Digital Lock Detect Hardware Compatible to the ADF4110/ADF4111/
ADF4112/ADF4113 Typical Operating Current 4.5 mA Ultralow Phase Noise 16-Lead TSSOP 20-Lead LFCSP
APPLICATIONS Clock Generation Low Frequency PLLs Low Jitter Clock Source Clock Smoothing Frequency Translation SONET, ATM, ADM, DSLAM, SDM

FUNCTIONAL BLOCK DIAGRAM

AV
DV
DD
DD

GENERAL DESCRIPTION

The ADF4001 clock generator can be used to implement clock sources for PLLs that require very low noise, stable reference signals. It consists of a low noise digital PFD (phase frequency detector), a precision charge pump, a programmable reference divider, and a programmable 13-bit N counter. In addition, the 14-bit reference counter (R counter) allows selectable REF
IN
frequencies at the PFD input. A complete PLL (phase-locked loop) can be implemented if the synthesizer is used with an exter­nal loop filter and VCO (voltage controlled oscillator) or VCXO (voltage controlled crystal oscillator). The N minimum value of 1 allows flexibility in clock generation.
V
CPGND
P
R
SET
ADF4001
REF
IN
CLK
DATA
LE
RFINA
RF
B
IN
REV.
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.
24-BIT
INPUT REGISTER
SD
OUT
22
CE AGND DGND
14-BIT
R COUNTER
14
R COUNTER
LATCH
FUNCTION
LATCH
N COUNTER
LATCH
13
13-BIT
N COUNTER
REFERENCE
PHASE
FREQUENCY
DETECTOR
LOCK DETECT
CPI3
AV
DD
SD
OUT
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CURRENT SETTING 1
CPI2
MUX
M3
CHARGE
PUMP
CPI1
M2
M1
CURRENT SETTING 2
CPI6
CPI5
HIGH Z
CP
CPI4
MUXOUT
ADF4001* Product Page Quick Links
Comparable Parts
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Evaluation Kits
• ADF4001 Evaluation Board
Documentation
Application Notes
• AN-30: Ask the Applications Engineer - PLL Synthesizers
• AN-873: Lock Detect on the ADF4xxx Family of PLL Synthesizers
Data Sheet
• ADF4001: 200 MHz Clock Generator PLL Data Sheet
User Guides
• UG-092: The PLL Frequency Synthesizer Evaluation Board for the ADF4001
• UG-476: PLL Software Installation Guide
Software and Systems Requirements
• Integer-N Software
• ADF4001 FMC-SDP Interposer & Evaluation Board / Xilinx KC705 Reference Design
• BeMicro FPGA Project for ADF4001 with Nios driver
Tools and Simulations
• ADIsimPLL™
• ADIsimRF
Last Content Update: 08/30/2016
Reference Materials
Analog Dialogue
• Ask the Applications Engineer—30: PLL SYNTHESIZERS
• Phase-locked loops for high-frequency receivers and transmitters
Technical Articles
• Phase Locked Loops for High-Frequency Receivers and Transmitters – Part 1
• Phase Locked Loops for High-Frequency Receivers and Transmitters – Part 3
• Phase-Locked Loops for High-Frequency Receivers and Transmitters - Part 2
Design Resources
• ADF4001 Material Declaration
• PCN-PDN Information
• Quality And Reliability
• Symbols and Footprints
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ADF4001–SPECIFICATIONS
B
CPGND = 0 V; R
Parameter B Version Unit Test Conditions/Comments
RF CHARACTERISTICS (3 V) See Figure 3 for Input Circuit
RF Input Frequency 5/165 MHz min/max RF Input Sensitivity –10/0 dBm min/max
RF CHARACTERISTICS (5 V)
RF Input Frequency 10/200 MHz min/max –5/0 dBm min/max
REF
CHARACTERISTICS See Figure 2 for Input Circuit
IN
REF
IN
REF
IN
REF
IN
REFIN Input Current ± 100 µA max
PHASE DETECTOR
Phase Detector Frequency
CHARGE PUMP
I
Sink/Source Programmable: See Table V
CP
High Value 5 mA typ With R Low Value 625 µA typ Absolute Accuracy 2.5 % typ With R R
SET
I
Three-State Leakage Current 1 nA typ
CP
Sink and Source Current Matching 2 % typ 0.5 V ≤ V I
vs. V
CP
ICP vs. Temperature 2 % typ VCP = VP/2
LOGIC INPUTS
V
, Input High Voltage 0.8 × DV
INH
V
, Input Low Voltage 0.2 × DV
INL
I
INH/IINL
CIN, Input Capacitance 10 pF max
LOGIC OUTPUTS
VOH, Output High Voltage DVDD – 0.4 V min IOH = 500 µA VOL, Output Low Voltage 0.4 V max IOL = 500 µA
POWER SUPPLIES
AV
DD
DV
DD
V
P
4
I
(AIDD + DIDD)
DD
ADF4001 5.5 mA max 4.5 mA typical
I
P
Low Power Sleep Mode 1 µA typ
NOISE CHARACTERISTICS
ADF4001 Phase Noise Floor
Phase Noise Performance
200 MHz Output
Spurious Signals
200 MHz Output
NOTES
1
Operating temperature range (B Version) is –40°C to +85°C.
2
AVDD = DVDD = 3 V; for AVDD = DVDD = 5 V, use CMOS compatible levels.
3
Guaranteed by design. Sample tested to ensure compliance.
4
TA = 25°C; AVDD = DVDD = 3 V; RFIN = 100 MHz.
5
The synthesizer phase noise floor is estimated by measuring the in-band phase noise at the output of the VCO and subtracting 20 logN (where N is the N divider value).
6
The phase noise is measured with the EVAL-ADF4001EB1 evaluation board and the HP8562E spectrum analyzer.
7
f
= 10 MHz; f
REF
IN
Specifications subject to change without notice.
= 4.7 k; TA = T
SET
MIN
to T
, unless otherwise noted; dBm referred to 50 .)
MAX
20/200 MHz min/max –10/0 dBm min/max
Input Frequency 5/104 MHz min/max For f < 5 MHz, Use DC-Coupled Square Wave
Input Sensitivity
2
–5 dBm min AC-Coupled. When DC-Coupled:
Input Capacitance 10 pF max
3
55 MHz max
Range 2.7/10 k typ See Table V
CP
1.5 % typ 0.5 V ≤ VCP VP – 0.5
, Input Current ±1 µA max
2.7/5.5 V min/V max AV
DD
AVDD/6.0 V min/V max AVDD VP 6.0 V
0.4 mA max TA = 25°C
5
6
7
7
= 200 kHz; Offset Frequency = 1 kHz; fRF = 200 MHz; N = 1000; Loop B/W = 20 kHz.
PFD
–161 dBc/Hz typ @ 200 kHz PFD Frequency –153 dBc/Hz typ @ 1 MHz PFD Frequency
–99 dBc/Hz typ @ 1 kHz Offset and 200 kHz PFD Frequency
–90/–95 dBc typ/dBc typ @ 200 kHz/400 kHz and 200 kHz PFD Frequency
DD
DD
(AV
= DVDD = 3 V 10%, 5 V 10%; AVDD VP 6.0 V ; AGND = DGND =
DD
(0 to V
0 to V
)
DD
Max (CMOS Compatible)
DD
= 4.7 k
SET
= 4.7 k
SET
VP – 0.5
CP
V min V max
@ VCXO Output
1
–2–
REV.
ADF4001
WARNING!
ESD SENSITIVE DEVICE
B
600
(AV

TIMING CHARACTERISTICS

R
= 4.7 k; TA = T
SET
Parameter (B Version) Unit Test Conditions/Comments
t
1
t
2
t
3
t
4
t
5
t
6
Guaranteed by design but not production tested. Specifications subject to change without notice.
MIN
to T
, unless otherwise noted; dBm referred to 50 .)
MAX
Limit at T
to T
MIN
10 ns min DATA to CLOCK Setup Time 10 ns min DATA to CLOCK Hold Time 25 ns min CLOCK High Duration 25 ns min CLOCK Low Duration 10 ns min CLOCK to LE Setup Time 20 ns min LE Pulsewidth
CLOCK
DATA
DB20
(MSB )
= DVDD = 3 V 10%, 5 V 10%; AVDD VP 6.0 V ; AGND = DGND = CPGND= 0 V;
DD
MAX
t
t
3
4
t
t
1
2
DB19
DB2
DB1
(CONTROL BIT C2)
DB0 (LSB)
(CONTROL BIT C1)
t
6
LE
LE
Figure 1. Timing Diagram

ABSOLUTE MAXIMUM RATINGS

(
TA = 25°C, unless otherwise noted.)
1, 2
AVDD to GND3 . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V
AV
to DVDD . . . . . . . . . . . . . . . . . . . . . . . . . 0 V to +0.3 V
DD
V
to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V
P
V
to AVDD . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +5.5 V
P
Digital I/O Voltage to GND . . . . . . . . . –0.3 V to V
Analog I/O Voltage to GND . . . . . . . . . . –0.3 V to V
REF
, RFINA, RFINB to GND . . . . . . . –0.3 V to VDD + 0.3 V
IN
A to RFINB . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± mV
RF
IN
+ 0.3 V
DD
+ 0.3 V
P
Operating Temperature Range
Industrial (B Version) . . . . . . . . . . . . . . . . –40°C to +85°C
Storage Temperature Range . . . . . . . . . . . . –65°C to +150°C
Maximum Junction Temperature . . . . . . . . . . . . . . . . . .150°C
t
5
TSSOP θ LFCSP θ LFCSP θ
Thermal Impedance . . . . . . . . . . . . . . 150.4°C/W
JA
Thermal Impedance (Paddle Soldered) . . 122°C/W
JA
Thermal Impedance (Paddle Not Soldered) 216°C/W
JA
Lead Temperature, Soldering
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . . . 215°C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 220°C
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
2
This device is a high performance RF integrated circuit with an ESD rating of
<2 kand it is ESD sensitive. Proper precautions should be taken for handling and assembly.
3
GND = AGND = DGND = 0 V.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the ADF4001 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
REV.
–3–
ADF4001

PIN CONFIGURATIONS

DD
1 2 3 4 5
SET
VPDVDDDV
CP
R
20
19
18
ADF4001
TOP VIEW
(Not to Scale)
8
6
7
IN
DD
AVDDAV
REF
LFCSP
DD
16
17
MUXOUT
15 14
LE
13
DATA
12
CLK CE
11
9
10
DGND
DGND
/2 and a dc
. In systems
DD
02569-004
1
R
SET
2
CP
3
CPGND
4
IN
IN
B A
DD
IN
ADF4001
TOP VIEW
5
(Not to S cale)
6
7
8
AGND
RF RF
AV
REF
NOTES
1. TRANSIS TO R COUNT 6425 (CMOS) AND 50 (BIPOL AR).
16
15
14
13
12
11
10
9
V
P
DV
DD
MUXOUT LE DATA CLK CE DGND
CPGND
AGND AGND
B
RF
IN
A
RF
IN
02569-003
NOTES
1. TRANSISTO R COUNT 6425 (CMOS) AND 50 (BIPOLAR).
2. CONNECT EX POSED PAD TO AGND.
TSSOP
Table 1. Pin Function Descriptions
TSSOP Pin No.
1 19 R
2 20 CP
LFCSP Pin No. Mnemonic Description
SET
Connecting a resistor between this pin and CPGND sets the maximum charge pump output current. The nominal voltage potential at the R between I
So, with R
CP
I
MAXCP
SET
Charge Pump Output. When enabled, this provides ±I
and R
SET
5.23
R
SET
= 4.7 kΩ, I
is
CP MAX
= 5 mA.
pin is 0.66 V. The relationship
SET
to the external loop filter which,
CP
in turn, drives the external VCO or VCXO. 3 1 CPGND Charge Pump Ground. This is the ground return path for the charge pump. 4 2, 3 AGND Analog Ground. This is the ground return path of the prescaler. 5 4 RFINB
Complementary Input to the N counter. This point must be decoupled to the ground
plane with a small bypass capacitor, typically 100 pF. See Figure 3. 6 5 RFINA Input to the N counter. This small signal input is ac-coupled to the external VCO or VCXO. 7 6, 7 AVDD
Analog Power Supply. This ranges from 2.7 V to 5.5 V. Decoupling capacitors to the
analog ground plane should be placed as close as possible to this pin. AVDD must have the
.
DD
8 8 REFIN
same value as DV
Reference Input. This is a CMOS input with a nominal threshold of V
equivalent input resistance of 100 kΩ. See Figure 2. This input can be driven from a TTL
or CMOS crystal oscillator or can be ac-coupled. 9 9, 10 DGND Digital Ground. 10 11 CE
Chip Enable. A logic low on this pin powers down the device and puts the charge pump
output into three-state mode. Taking the pin high will power up the device, depending on
the status of the power-down bit F2. 11 12 CLK
Serial Clock Input. This serial clock is used to clock in the serial data to the registers. The
data is latched into the 24-bit shift register on the CLK rising edge. This input is a high
impedance CMOS input. 12 13 DATA
Serial Data Input. The serial data is loaded MSB first with the two LSBs being the control
bits. This input is a high impedance CMOS input. 13 14 LE
Load Enable, CMOS Input. When LE goes high, the data stored in the shift registers is
loaded into one of the four latches, the latch being selected by using the control bits. 14 15 MUXOUT
This multiplexer output allows either the lock detect, the scaled RF, or the scaled reference
frequency to be accessed externally. 15 16, 17 DVDD
Digital Power Supply. This ranges from 2.7 V to 5.5 V. Decoupling capacitors to the
digital ground plane should be placed as close as possible to this pin. DVDD must be the
.
DD
16 18 VP
same value as AV
Charge Pump Power Supply. This should be greater than or equal to V
where V
is 3 V, it can be set to 5 V and used to drive a VCO or VCXO with a tuning
DD
range of up to 5 V. N/A EP EPAD Exposed Pad. The exposed pad should be connected to AGND.
Rev. B | Page 4
Typical Performance Characteristics–ADF4001
B
0
–5
–10
–15
–20
AMPLITUDE – dBm
–25
–30
–35
0
TA = +25C
50 100 150 200 250
FREQUENCY – MHz
TPC 1. Input Sensitivity, V
0
–5
–10
–15
–20
AMPLITUDE – dBm
–25
–30
0
510152025
FREQUENCY – MHz
TPC 2. Input Sensitivity, V
TA = +85C
TA = –40C
= 3.3 V, 100 pF on RF
DD
= 3.3 V, 100 pF on RF
DD
10dB/DIVISION R
–40
–50
–60
–70
–80
–90
–100
–110
PHASE NOISE – dBc/Hz
–120
–130
–140
100
FREQUENCY OFFSET FROM 200MHz CARRIER – Hz
IN
IN
TPC 4. Integrated Phase Noise (200 MHz, 200 kHz, 20 kHz)
0
–10
–20
–30
–40
–50
–60
–70
OUTPUT POWER – dB
–80
–90
–100
REFERENCE LEVEL =
–200kHz –100kHz 0200MHz 100kHz 200kHz
TPC 5. Reference Spurs (200 MHz, 200 kHz, 20 kHz)
= –40dBc/Hz rms NOISE = 0.229 DEGREES
L
0.229 rms
1k 10k 100k 1M
VDD = 3V, VP = 5V
= 2.5mA
I
CP
PFD FREQUENCY = 200kHz
–5.7dBm
LOOP BANDWIDTH = 20kHz RES. BANDWIDTH = 300Hz VIDEO BANDWIDTH = 300Hz SWEEP = 4.2 SECONDS AVERAGES = 20
–92.3dBc
0
–10
–20
–30
–40
–50
–60
–70
OUTPUT POWER – dB
–80
–90
–100
REFERENCE LEVEL =
–5.7dBm
–2kHz –1kHz 200MHz 1kHz 2kHz 0
VDD = 3V, VP = 5V
= 2.5mA
I
CP
PFD FREQUENCY = 200kHz LOOP BANDWIDTH = 20kHz RES. BANDWIDTH = 10Hz VIDEO BANDWIDTH = 10Hz SWEEP = 1.9 SECONDS AVERAGES = 26
–99.2dBc/Hz
TPC 3. Phase Noise (200 MHz, 200 kHz, 20 kHz)
REV.
–5–
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